Millimetre-wave solutions for 5G backhaul. Mike Geen

Transcription

1 Millimetre-wave solutions for 5G backhaul Mike Geen 1

2 Summary The Mobile Backhaul Background Fixed wireless bands and available BW Use cases The impact of 5G Spectrum availability Increasing capacity mm-wave transmission characteristics Modulation order vs channel width vs multichannel mm-wave technology overview Semiconductors mm-wave module construction mm-wave transceiver design Key features Importance of detailed device characterisation Key components Conclusions and further information 2

3 Basic microwave backhaul. the backhaul portion of the network comprises the intermediate links between the core network, or backbone network and the small subnetworks at the "edge" of the entire hierarchical network

4 Backhaul Media Typically costs between 30,000 and 80,000 per km to lay new fibre. Often impossible to lay new fibre where it is needed. Optical Fibre installation tool Microwave installation tool 4

5 Backhaul spectrum In the traditional bands there are a number of narrow channels spread between 6 and 42GHz. The total bandwidth available for mobile backhaul below 42GHz is just 15GHz. This now heavily used and expensive licences are required to operate in these bands. In contrast, the millimetre wave bands will provide an additional 21GHz of bandwidth in large chunks allowing very high data rates to be achieved. 5

6 ETSI All rights reserved 6

7 Diversified challenges and gaps for 5G 5G Latency Throughput Connections Mobility Area Traffic Capacity 1 ms E2E Latency 10Gbps / connection 1,000K Connections / Km 2 500km/h High-speed railway 10 Mbps/m 2 Ultra Dense Tera Cell GAP 30~50x 100x 100x 1.5x Densification LTE 30~50ms 100Mbps 10K 350Km/h Small Cells ETSI All rights reserved 7

8 Pressure on spectrum from 5G mobile access The mobile industry is now paving the way towards the standardization of the fifth generation of mobile telecommunications technology. 5G services intend to offer higher efficiency and significantly faster mobile data services. To achieve the target of 10Gbits peak download capacity requires several GHz of contiguous spectrum (>1GHz per operator) Spectrum above 6 GHz now under consideration for 5G to provide wider bandwidth channels to support higher volume data communication to wireless devices. Ofcom commissioned a study which identified top 5 bands as candidates for 5G all mm Wave Ofcom subsequently also identified lower frequency bands although these may not offer sufficient bandwidth Similar work ongoing with ITU and FCC Source; Ofcom 5G and Future Technologies presentations: Quotient Associates - 5G Candidate Band Study: 8

9 5G mobile access will create challenges for mobile backhaul Potential threat to existing fixed service bands - the allocation of bands above 6GHz for 5G (deployments after 2020), can endanger the capability of operators to properly operate backhaul networks for 3 and 4G All discussions about allocation of spectrum for 5G must consider the needs of the operators for backhaul, current (3 and 4G) and future (5G) * The allocation of spectrum for 5G cannot be separated by the allocation of sufficient and suitable spectrum to deploy the backhaul network * * Renato Lombardi ETSI mwt ISG Chairman. 9

10 Summary The Mobile Backhaul Background Fixed wireless bands and available BW Use cases The impact of 5G Spectrum availability Increasing capacity mm-wave transmission characteristics Modulation order vs channel width vs multichannel mm-wave technology overview Semiconductors mm-wave module construction mm-wave transceiver design Key features Importance of detailed device characterisation Key components Conclusions and further information 10

11 Mobile backhaul today ETSI All rights reserved 11 11

12 ETSI All rights Filtronic reserved

13 ETSI All rights reserved 13 13

14 Ten different portions of spectrum are available (when some contiguous portions are considered), from 92 to 200GHz, allocated primarily to Fixed Service, covering almost 54% of the whole band under consideration (92-200GHz). More than 30GHz of spectrum available in total in bands ranging from 1 GHz to 12.5 GHz: ETSI All rights Filtronic reserved

15 The rain attenuation in W-band and D-band can be derived from the figure below. It should be noted that the rain attenuation of D-band is around 2dB larger than E-band. In addition it should be noted that the rain attenuation in D-band is almost flat. Compared to V-band, both W and D-band, similarly to E-band, are in the part of spectrum not affected by Oxygen absorption peaks Gas attenuation, is 1 to 2dB/km in D-band. This is not a dominant factor for the link distance limitation. The gas attenuation in D-band is almost flat. In W-band it s lower than 1 db/km System simulations undertaken within the ETSI mwt ISG suggest link distances of several hundred metres are practical at D band frequencies with comparable antenna sizes to E Band ETSI All rights reserved 15

16 Rain Attenuation ~80% of the Continental US and most of Western Europe falls into rain zone K and below. To operate at a 99.99% availability level, a radio system s fade margin must be designed to withstand a maximum rainfall rate of 42 mm/hour Equates to ~16dB/km loss at 86GHz compared to ~11dB/km at 40GHz E band Antennas give 6dB more system gain than at 40GHz for a given aperture 16

17 Increasing capacity - Modulation vs BW Doubling channel width has 3dB impact on C/N at Rx and therefore range Doubling data rate through modulation order has more severe impact on min C/N required to achieve error free operation: 7dB impact QPSK to 16 QAM, 12dB impact 16QAM to 256QAM and 12 db impact 256QAM to 4096 QAM 17

18 Modulation Order and E-band Link Range Tx 12 to 32dBm Gain = π2 d 2 ε 43dBi λ 2 Free space loss= 20log(4πd/λ) 131dB for d=1km, 145dB for d=5km Ga= 43dBi Rx NF= 7dB QPSK 16QAM PA back off required at higher orders to ensure linearity and mask compliance 256QAM 50dBi 60cm Antenna will increase range by approx. 40% to 60% depending on power, modulation & rain fade 18

19 Increasing the data rate Higher order modulation Conserves Spectrum Diminishing returns for data rate* and severe impact on system gain Places severe demands on phase noise, PA linearity, Gain flatness, IQ amplitude and phase matching (some of these can be mitigated to some extent within the modem) 256 QAM readily achievable and just 512QAM possible with using available components. Wider channels Consumes spectrum Increases demands on base band A/Ds D/As and diff amps Tx and Rx gain flatness requirements more sever Less impact on link budget Multi channel systems XPIC, LOS-MIMO, Multiband Recent published results: 40 Gbps over 4.2km, 36Gbps over 10km Consumes spectrum Higher cost Multiple transceivers, Additional passive components; multiplexers OMTs polarisers etc *symbol rate =log 2 of QAM order ELVA

20 Summary The Mobile Backhaul Background Fixed wireless bands and available BW Use cases The impact of 5G Spectrum availability Increasing capacity mm-wave transmission characteristics Modulation order vs channel width vs multichannel mm-wave technology overview Semiconductors mm-wave module construction mm-wave transceiver design Key features Importance of detailed device characterisation Key components Conclusions and further information 20

21 Semiconductor technology status GaAs Highly integrated single chip receivers and medium power transmitters available from several vendors Power amplifiers to 28dBm Psat demonstrated with commercial 0.1um phemt Foundry (WIN) GaAs mhemt processes have demonstrated 2dB NF in E band (BAe 50nm mhemt) InP <2.5dB NF demonstrated with 0.1um InP HEMT (Northrop Grumman) GaN PAs with Psat > 30dBm to 100GHz demonstrated (HRL 0.14um GaN on SiC) InGaP/GaAs HBT Low phase noise VCOs -95dBc/Hz at 1MHz after multiplication to 86GHz SiGe First generation (130nm, ~250GHz ft) highly integrated chips available. Power 12dBm to 18dBm (Psat), Noise figure 8 db to 11dB. (up-to 16dB over temperature). Phase noise ~ -83 dbc/hz. Well suited to 60GHz small cell and WiGig BiCMOS PAs reported up to 20dBm on 40nmCMOS. NF similar to SiGe. mmwave CMOS Still at development phase very high initial investment so will require very high volume application. 21

22 2W E Band Power Amplifier E Band Waveguide is small Efficient power combining therefore possible in a compact outline Filtronic Cerus Power Amplifier OIP3 39dBm 18dB gain Integrated power detector 40x40x47mm 4V, 3.6A 22

23 Small Macro Macro Small Fixed BB Next gen. (5G) Cell Cell Cell Cell Wireless to Home.. Backhaul Fronthaul Backhaul Fronthaul RF Analog Semiconductor Technologies Trends RF Semi techn ology Use Cases m QPSK,16QAM >1GHz CS >1Gbps To>300m QAM64+ typ.500mhz CS >1Gbps m mod TBA >1GHz CS To 10Gbps (Steerable low gain antennas) To>3000m 16 to 256 QAM 250 to 2000MHz CS 1 to 10Gbps (with XPIC/MIMO) 2016 Over time 2020 SiGe GaAs SiGe GaAs SiGe GaAs GaAs GaAs SiGe + GaAs BiCMOS BiCMOS BiCMOS BiCMOS * GaN (PA) BiCMOS * GaN (PA) CMOS CMOS CMOS InP/mHEMT (LNA) InP/mHEMT (LNA) * Up/Down conversion III-V PA/LNA BiCMOS CMOS GaN InP Compound semiconductors are essential for high performance systems Highly integrated GaAs chip sets available now relatively low initial investment makes these well suited to backhaul volumes Si based technologies offer a good solution for short reach systems but demand high volumes to justify initial investment SiGe /GaAs combinations achieving usable levels of Macro cell performance. Phase noise currently a major limitation for fully integrated SiGe Use of external low noise VCO required For reliable operation with high order modulation, 23

24 D Band Semiconductor Status 130 to to GHz to 164 GHz 167 to GHz 90nm SiGe Bi 140GHz 6dB NF 22 dbm Psat 65nm CMOS 140GHz PA 4dBm Psat 130nm SiGe BiCMOS 148GHz PA 4.5dBm Psat All proposed channel agreements can be supported with III-V technology Si based technology currently only applicable to 160GHz (SiGe) and 140GHz (CMOS) Note, there are no COTS devices currently available. 55nm SiGe BiCMOS 160GHz PA 10dBm Psat 100nm InGaAs mhemt 155 GHz PA 11dBm P1dB 100nm InP p HEMT 170GHz PA 13dBm Psat 35nm InP p HEMT 185GHz LNA 4dB NF 50nm InGaAs m HEMT 210GHz LNA 4.8dB NF 24

25 mmwave assembly technology Packaged mmwave die to allow SMT assembly are appearing in form of SIP/ MCMs, chip scale BGAs and flip chip die, however, any form of packaging will impact the performance up to 2dB loss in typical plastic BGA. Also concerns over thermal impedance and reliability of flip chip PAs FBL has in house automatic die attach and wire bond capability to allow direct integration into microwave assemblies to achieve the highest level of performance without the need for the addition complexity and cost of a packaging. Hybrid construction gives ability to mix and match technologies e.g. Quartz filters and printed micro strip components plus SMT components. 25

26 Assembly Challenges 1 Manual wire / ribbon bonding 0 s_parameters -1-2 DB( S(2,1) ) Ribbon DB( S(2,1) ) Wire 86 GHz db GHz db MMIC to MMIC connections Frequency (GHz) 26

27 Assembly Challenges 2 Bond compensation reduction in thru loss Nominal case:- 300um long Improvement in return loss Possible to apply compensation but still subject to assembly tolerance and variations in bond length 27

28 Die & Component Placement Fully automated component placement equipment enables tightly controlled, accurate and repeatable die placement Vacuum picked from waffle pack or reels X/Y placement accuracy +/- 12 microns Automated recognition system for alignment of fiducials and components 28

29 Summary The Mobile Backhaul Background Fixed wireless bands and available BW Use cases The impact of 5G Spectrum availability Increasing capacity mm-wave transmission characteristics Modulation order vs channel width vs multichannel mm-wave technology overview Semiconductors mm-wave module construction mm-wave transceiver design Key features Importance of detailed device characterisation Key components Conclusions and further information 29

30 10Gbps E Band Outdoor unit Filtronic Orpheus Transceiver Filtronic Orpheus based ODU reference design 30

31 E Band Transceiver Key Features Parameter Main System impact Typical spec Ref to Antenna port Sate of the Art Tx Linearity Mask compliance Modulation order 20dBm OIP3 27dBm Phase Noise Modulation order -92dBc/Hz@100kHz -112dBc/Hz@1MHz Rx Noise Figure OIP3 >36dBm Rx Sensitivity - Range <9dB <4dB Tx Power Max Range Psat >23dBm Psat 35dBm Rx Linearity Min Range, CW interferer immunity -32dBc@-23dBm IP Power Tx Noise floor Mask Compliance <(Pout-77) dbm/mhz within 2.5xCS Tx/Rx BB Bandwidth Tx Power control Data Rate 3000 MHz ADC and BB diff Amp limitation System Dynamic Range 30dB (settable within ±1dB at top of range) On board micro manages channel setting and application of calibration data for Tx power monitor, LO cancelation, sideband suppression, temperature compensation, etc. 31

32 ETSI E-Band Mask Shown for 2GHz channel spacing The noise floor attenuation depends on the CS Note; Mask is relative, noise floor must therefore decrease db for db with Tx Power Ref ETSI EN V3.0.8 ( ) 32

33 Example Tx Line-up mmw WG Launch Diplexer etc Baseband Input E-Band LO Input All element models based on measured data Data files contain the mmw performance at numerous bias points Line-up actively adjusts individual elements to provide modelled performance at defined Tx output power (reflecting real-world operation) 33

34 Sensitivity to the linearity of Tx chain elements Tx Chain sensitivity to modulator linearity Pout 20dBm Tx Chain sensitivity to MPA linearity Pout 20dBm Tx Chain sensitivity to PA linearity Pout 20dBm Parameter Min PA Comment Requirement Gain 23dB Psat 26dBm Transceiver Linier Pout 20dBm OIP3 at 20dBm 32dBm Min required to ensure transceiver OIP3 of 27dBm. OIP3 at 32dBm 17dBm OIP3 at 5dBm 27dBm PA dominates Tx Chain linearity 34

35 IMD3 (dbc) IM3 measured on PAs from four manufacturers PA PA 2 DUT2 Fixed Vg -414mV dBm OIP3 OIP3 36dBm 32dBm Output power (dbm) PA 3 PA 4 35

36 IMD3 vs Power vs Bias conditions 36

37 DB( S(2,1) ) gapz0051_dut1_probe Points_Vd 3p3V_Vg1 n345mv_id1 275mA_Vg2 n326mv_id2 400mA_07D DB( S(1,1) ) gapz0051_dut1_probe Points_Vd 3p3V_Vg1 n345mv_id1 275mA_Vg2 n326mv_id2 400mA_07D DB( S(2,2) ) gapz0051_dut1_probe Points_Vd 3p3V_Vg1 n345mv_id1 275mA_Vg2 n326mv_id2 400mA_07D s-parameters probed on chip vs ribbon bonded DB( S(2,1) ) gapz0052_dut1_vd 3p3V_Vg1 n351mv_id1 350mA_Vg2 n350mv_id2 400mA_05Dec16 DB( S(1,1) ) gapz0052_dut1_vd 3p3V_Vg1 n351mv_id1 350mA_Vg2 n350mv_id2 400mA_05Dec16 DB( S(2,2) ) gapz0052_dut1_vd 3p3V_Vg1 n351mv_id1 350mA_Vg2 n350mv_id2 400mA_05Dec16 gapz0052_dut1_noribbon "TYPICAL" s21 spec s "TYPICAL" s21 spec gapz0051_dut1_noribbon DB( S(2,1) ) gapz0051_dut1_vd 3p3V_Vg1 n339mv_id1 275mA_Vg2 n321mv_id2 400mA_05Dec16 DB( S(1,1) ) gapz0051_dut1_vd 3p3V_Vg1 n339mv_id1 275mA_Vg2 n321mv_id2 400mA_05Dec16 DB( S(2,2) ) gapz0051_dut1_vd 3p3V_Vg1 n339mv_id1 275mA_Vg2 n321mv_id2 400mA_05Dec s min s11 and s22 spec s22 s "MIN" s22 spec "MIN" s11 spec s11 s Frequency (GHz) 81 GHz 86 GHz GHz Frequency (GHz) 76 GHz gapz0052_dut1_plusribbon 81.4 GHz db 86 GHz db gapz0051_dut1_plusribbon s21 76 GHz db DB( S(2,1) ) gapz0052_dut1_probe Points_Vd 3p3V_Vg1 n354mv_id1 350mA_Vg2 n353mv_id2 400mA_07D 86 GHz db 0 s GHz db -10 DB( S(1,1) ) gapz0052_dut1_probe Points_Vd 3p3V_Vg1 n354mv_id1 350mA_Vg2 n353mv_id2 400mA_07D DB( S(2,2) ) gapz0052_dut1_probe Points_Vd 3p3V_Vg1 n354mv_id1 350mA_Vg2 n353mv_id2 400mA_07D s Frequency (GHz) 81 GHz 86 GHz GHz Frequency (GHz) 76 GHz 37

38 Psat (dbm) P1dB (dbm) Psat (dbm) P1dB (dbm) Effect of ribbon bonds on Power 71 to 76GHz DUT1 (with ribbon bonds) Fixed Id 1 2 DUT# Fixed Vg DUT1 (with ribbon bonds) Fixed Id 1 2 DUT# Fixed Vg DUT2 (probed on chip) fixed Id fixed Vg 20 fixed Id fixed Vg 1 fixed Vg fixed Vg Fixed Id DUT# Fixed Id DUT# Fixed Vg DUT2 (probed on chip)

39 LO Sources LO signals generated within the Tx and Rx modules using internal PLL and low phase noise GaAs VCOs To reduce power consumption, VCO outputs can be shared via power splitters between same frequency RF modules RF filtering suppresses unwanted products generated by the VCOs and multiplication stages High stability TXCOs employed Typical Phase noise vs carrier offset after multiplication (at E-Band) is defined in the table below Field proven to robustly support 256QAM operation Carrier offset 1KHz 50 10kHz kHz 95 1MHz MHz MHz 140 Phase Noise (dbc/hz) 39

40 DB( S(1,1) ) dip_epl_rect_post_pw1_pl1p6php57_jnl1p0 DB( S(1,2) ) dip_epl_rect_post_pw1_pl1p6php57_jnl1p0 DB( S(1,3) ) dip_epl_rect_post_pw1_pl1p6php57_jnl1p0 DB( S(1,1) ) dip_epl_rect_post_pw1_pl1p6php57_jnl1p0_eq_impedance DB( S(1,2) ) dip_epl_rect_post_pw1_pl1p6php57_jnl1p0_eq_impedance DB( S(1,3) ) dip_epl_rect_post_pw1_pl1p6php57_jnl1p0_eq_impedance Filters / Multiplexers Filtronic has long experience designing and manufacturing E-band filters, diplexers and multiplexers In-house developed software Network Synthesis for initial filter synthesis AWR Microwave Office to create ideal filter model Keysight EMPro to create advanced 3D EM filter model Manufacturing tolerances need to be considered at the design stage The plots below show the yield analysis based on +/-10um (left) and +/-5um (right) machining and plating tolerances At D Band manufacturing tolerances of +/-2um are required 0 epl_rect_post_pw1_pl1p6_php DB( S(1,1) ) DB( S(1,3) ) DB( S(1,2) ) dip_epl_rect_post_pw1_pl1p6php57_jnl1p0 dip_epl_rect_post_pw1_pl1p6php57_jnl1p0 dip_epl_rect_post_pw1_pl1p6php57_jnl1p0_eq_impedance Frequency (GHz) DB( S(1,2) ) DB( S(1,1) ) DB( S(1,3) ) dip_epl_rect_post_pw1_pl1p6php57_jnl1p0 epl_rect_post_pw1_pl1p6_php57 dip_epl_rect_post_pw1_pl1p6php57_jnl1p0_eq_impedance dip_epl_rect_post_pw1_pl1p6php57_jnl1p0_eq_impedance Multiplexers allow simultaneous multi-channel operation for efficient use of the E-band spectrum, since WG dimensions are small at E Band it is possible to incorporate these into a very compact assembly For example, a 2x4 channel multiplexer system incorporating a polariser can facilitate 4 simultaneous transmit/receive links each operating with a 2GHz BW Plot showing E-band multiplexer simulation (green) versus measured performance (black/red) In addition, Filtronic can integrate receivers directly onto the multiplexer to reduce weight and insertion loss leading to lowest possible noise figure solutions Filtronic employs the following tool chain to robustly simulate filter/multiplexer performance: Frequency (GHz) 40

41 Transmitters Receivers and PAs Filtronic transmitters and receivers offer excellent gain, gain control and linearity Integrated VCOs deliver market leading phase noise and reduce size & weight On-board microcontroller and pre-calibration takes care of the Tx output power regardless of the requested frequency, power or ambient temperature Receiver modules developed employing ultra-low noise figure MMICs Cerus 2W E-Band PA (can be scaled to >3W) proven to deliver high gain and excellent linearity. Demonstrated 32dBm linear power at Mobile World Congress, Barcelona March

42 Multiplexer OMT/Polariser Receivers Transmitters Multichannel Long Range Transceivers The specification below presents one possible system architecture. Parameter Frequency Range Insertion Loss XPD Dimensions Spec 71-86GHz <0.8dB >30dB Weight <25g Passband partitioning Insertion Loss* 4 Return Loss * 4 Channel Isolation (Tx-Tx or Rx-Rx)* 4 Channel Isolation (Tx to Rx) Dimensions (example for 4 channels) Weight (example for 4 channels) 20x20x20mm To suit customer requirements within range 71-76GHz/81-86GHz <0.8dB >14dB >25dB >90dB 100x100x6mm <200g Parameter Number of Receivers Rx Centre Frequency in Range Noise Figure RF Bandwidth per Rx Gain Gain Adjustment Range Dimensions (example for 4 channels) Weight (example for 4 channel) Spec Multiple 71-76GHz/81-86GHz * 1 <4dB 2GHz 25dB 10dB 100x100x20 mm <400g Total Power Consumption ~4W Parameter Number of Transmitters Tx Centre Frequency in Range PSAT P1dB Gain Gain Adjustment Range Dimensions (example for 4 channels) Weight (example for 4 channels) Total Power Consumption per channel Spec Multiple 71-76GHz/81-86GHz * 1 >33dBm >31dBm ~35dB >10dB 100x100x20 mm <900g* 2 ~18W* 2 * 1 Support for multiple channels and cross polarisation. * 2 Weight and power consumption dependent on PA output power requirements. * 3 Dependent upon antenna gain, dc power availability etc., higher power solution can be designed for ground based system. * 4 Example shown for 2GHz channels separated by 3GHz. 42

43 Conclusion Wide bandwidth mm Wave radios provide the solution to the increasing backhaul capacity demands of next generation communications system Fiber like capacity; 10Gbps in a single channel, 40Gbps in multichannel configurations and with sufficient Tx power, E-band links can operate at high capacity over 10km. New spectrum allocations above 95GHz will provide a path to even higher capacities in the future Filtronic s proven E-band technology platform has been developed to enable a rapid, low risk transition from high performance short range terrestrial links to the highest capacity long range links THANK YOU 43

44 An analogy? The population of London grew dramatically in the 19 th century but until 1865 the sewage system comprised of 200,000 cesspools connected to creeks and streams flowing into the river Thames, a shared resource providing transport and access to city. Joseph Bazalgette realised the flow rate of the river was insufficient to cope and a dedicated high capacity network was needed. He subsequently designed and oversaw the construction of 82 miles of underground brick main sewers to intercept outflows from 1,100 miles of new street sewers. When planning the network he took the densest population, gave every person the most generous allowance and came up with a diameter of pipe needed, then doubled it: had he not done so the system would have overflowed in the 1960s, rather than coping, as it has until the present day. The demand for telecom capacity is less easy to predict. 5G seems to be aiming to deliver the equivalent of a main line sewer to every person! 44

45 Further Information The following slides provide information on: The ETSI millimetre wave Transmission Industry Specification Group Filtronic Broadband Company background Design and manufacturing capabilities 45

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49 About Filtronic Filtronic was established 1977 currently ~200 employees World leader in the design and manufacture of a broad range of customised RF, microwave and millimetre-wave components and subsystems. Two Business Units: Filtronic Wireless designs and manufactures RF filters, combiners, TMAs, microwave subsystems and antennas for the mobile telecommunications industry, focusing on equipment for OEMs and network operators. HQ in Leeds with design centres in US and Sweden. Manufacturing is carried out in Suzhou, China Filtronic Broadband designs and manufactures 60 to 90GHz millimetre-wave products for mobile broadband backhaul, defence applications as well as providing build to print manufacturing at its state of the art, highly automated facility in Sedgefield Co Durham Filtronic has demonstrated world class product quality and reliability, with over 300,000 transceiver modules and 700,000 filter products successfully deployed in the field. FBL is a device agnostic supplier of mm-wave transceivers to OEMs offering high specification, competitively priced modules that reduce customers time to market We brings value to the semiconductor suppliers and OEM customers by acting as a technology enabler Our target customers are focused on supplying system level products to operators and have retreated from transceiver design and manufacture 49

50 Filtronic Background Filtronic Broadband Limited is a well established world leading designer and manufacturer of microwave & millimetre-wave products for the mobile backhaul and adjacent markets. Supplying customised turnkey solutions and providing Contract Manufacturing Services to the European Aerospace and Defence industry. Filtronic product range includes transceiver modules, multi-chip transceiver packages in Surface Mount Technology (SMT), diplexers and filter products covering a wide frequency range from 4GHz to 110GHz including V-band (57GHz to 66GHz), E-band (71GHz to 76GHz & 81GHz to 86GHz) and W-band (91GHz to 95GHz). Highlights 7 year track record in development of market leading, mmwave modules: Filtronic has an ongoing investment programme in mmwave technology which is delivering market leading TR modules to major OEMs. Established volume supplier of microwave & mmwave transmit and receive modules: Filtronic has extensive in-house design and manufacturing capability for microwave modules covering frequencies from 4-86GHz. Vertical cost effective solutions: Benefit of investment of over $5M in R&D including our own highly competitive MMIC chipsets. Highly integrated architectures: Filtronic designs and manufactures highly integrated microwave sub-systems for mobile backhaul and for military radar applications. A typical module includes full transmit and receive microwave front end electronics together with signal sources, LO synthesisers and baseband conversion. We can also include integrated no tune, low-loss diplexers/filters. Long established automated test facility. FBL has made substantial investments in automated microwave test over the frequency range 5GHz to 90 GHz. Filtronic is an existing approved vendor to major OEMs and aerospace equipment manufacturers. High reliability demonstrated through high volume field deployments. Over 300,000 Microwave modules, over 25,000 millimetre-wave modules and over 500,000 SMT multichip modules currently in service in mobile backhaul networks around the world. 50

51 Filtronic E-Band Product Overview Filtronic design and manufacture E-Band system solutions for multiple applications with high levels of field reliability demonstrated Filtronic s current generation E-Band transceivers operate up to 256QAM and have been proven to 10Gbps in single 2GHz channels Innovative architectures with a focus on high levels of integration minimise size, weight and power and enable deployment of multi-channel systems in a small envelope Recent focus on pushing the boundaries of performance at E-band has resulted in the development technology suitable for transmit powers >3W and receive noise figures <4dB Latest Filtronic E-band technology solutions are particularly appropriate for long range high capacity communications links such as High Altitude Psuedo Satellites Vast experience in the highly competitive backhaul market ensures cost effective solutions Examples of Filtronic highly integrated E-band transceiver modules Filtronic E-band booster amplifier - Cerus 51

52 Test Solutions High speed production test systems to 90GHz Automated measurement and calibration of Tx Power and Rx Gain Two tone IMD 3 on Tx and Rx Noise Figure Rx Gain Calibration for LO cancellation and sideband suppression Return Loss P1dB Gain Flatness All parameters can be tested over temperature. On wafer test to 110GHz NF, IMD3, Power, s-parameters Allows benchmarking of emerging devices Allows batch wafer acceptance testing in production mmwave Test Solutions 52

53 Manufacturing Capability Proven track record designing, manufacturing and testing carrier grade mmw products for multiple telecoms OEMs 26k mm Wave modules (75% E band) shipped to date making Filtronic largest independent mm-wave transceiver manufacturer, in the world. Manufacturing clean rooms with multiple automated production lines Epoxy dispense Die & component placement Wire bonding Auto Manual Automated test to >90GHz Data management Supply chain management All manufacturing in line with MIL-STD-883 ISO9001 certified 53

54 Filtronic mm-wave and Microwave Services Full custom design and volume manufacturing and test services for E Band transceivers 71 to 86GHz V band transceivers 57 to 64GHz ODU ready E band link reference designs Waveguide Filters, Diplexers and OMTs 6GHz to 110GHz GaN High power amplifiers 6 to 11 GHz Multichip Modules 6 to 24GHz 54