Designing Stability into 1296 MHz and 2304 MHz Low Noise Amplifiers
|
|
|
- Clifton Smith
- 5 years ago
- Views:
Transcription
1 Optical Navigation Division Designing Stability into 96 MHz and 4 MHz Low Noise Amplifiers By Al Ward W5LUA & Tommy Henderson WD5AGO July 8, 7 Central States VHF Society San Antonio, Texas
2 What do we want from an LNA? Low noise figure <.4 db High gain > 5 db Good input and output match minimizes interactions with other stages Stable must not oscillate when connected to antenna Cascadable Page
3 What makes a good second stage? Low noise figure <.8 db NF Enough gain to make cascade about to 5 db Good broadband match for first stage Stable Page
4 Today s Transistors Today s transistors have very low noise figures and very high gain High gain contributes to stability problems and decreased input intercept point Minimum input VSW and minimum noise figure will generally not occur simultaneously with same matching network. Use of source inductance may help but too much may cause instability Page 4
5 ATF-XXXX Series of PHEMTs Depletion mode PHEMT technology requires negative voltage on gate wrt source Ceramic and plastic surface mount packaging Various gate widths u / 4u / 8u / 6 u At lower frequencies, I.e. GHz or less, larger gate widths offer lower gain and lower impedances which can contribute to improved stability and lower matching circuit losses ATF-677 u S G 6 S ATF-54 4 u ATF-44 8 u ATF-4 6 u D Page 5
6 ATF-5XXXX Series of PHEMTs Enhancement mode PHEMT technology requires positive voltage on gate wrt source Plastic surface mount packaging Various gate widths 4u / 8u and larger Noise figure of enhancement mode devices. to. db higher than depletion mode devices ATF u ATF u Page 6
7 What about S-parameters?!??! A three-terminal two-port, such as the FET shown, has four S-parameters. S nn = voltage reflection coefficient, both amplitude and phase relative to 5 source impedance S and S are commonly displayed on a polar chart. S = input displayed on Smith chart Polar chart S Smith chart S = output displayed on Smith chart S S S Page 7
8 What about Noise Parameters?!??! o (Gamma Opt) is the reflection coefficient of the source impedance presented to the device that allows the device to produce its f min Matching circuit losses often limit the ability of the amplifier to achieve a noise figure equivalent to device f min Impedance Matching Network Q o not necessarily equal to S * which means noise match is not equivalent to a gain match n (Noise esistance) is used to calculate the device s sensitivity in noise figure to changes in source impedance, r n is normalized to 5. For minimum NF, in = o For maximum gain, in = S * in Page 8
9 Other measures of input characteristics VSW = Voltage Standing Wave atio VSW eturn Loss L log Mismatch Loss ML = LOG ( - ) Page 9
10 Input Impedance Match opt S* Match to opt for minimum noise figure Noise degrades in circular contours as match moves away from opt Impedance Matching Network in Q Degree of noise degradation is dependent on n, the noise resistance Most amateur applications aim for minimum noise figure and accept input VSW Page
11 Simultaneous Input VSW and Noise Match new opt new S* Adding source inductance rotates opt towards S * Source inductance is series feedback which effects gain and stability Its effect must be analyzed over as a wide a bandwidth as the device has gain Page
12 Output Impedance Match S'* S* L = S + S S o - S o * S * = L is the reflection coefficient of the output matching network with input terminated in opt, not 5 Match to S * = L for best gain/output VSW LNA may not be unconditionally stable when matched for best output VSW - Some resistive loading may be required to reduce gain to improve stability Best output VSW does not necessarily guarantee best PdB and IP. Page
13 Using AppCAD for Circuit Analysis Available for free download at Page
14 ATF-677 vs ATF-4 Stability Factors vs Freq. Stability Factor K calculated from S parameters at each frequency, K> for unconditional stability ATF-677 K < at all frequencies below GHz ATF-4 K < only below 4. GHz, making the device less sensitive to source grounding better for VHF LNAs K S S S S D D S S S S Page 4
15 ATF-677 vs ATF-4 S vs MAG vs MSG S = 5 Gain MAG = Maximum Available Gain applies when K> MSG = Maximum Stable Gain Page 5
16 Contributions to Source Inductance PCB LL LL. Lead length from edge of transistor package to bypass cap or plated through hole adds inductance. Use of a source resistor bypass capacitor can alter circuit stability. The inductance associated with the bypass capacitor and the equivalent inductance due to the thickness of printed circuit board Page 6
17 AN 8 ATF-677 L Band LNA December 996 Page 7
18 Single stage ATF-677 db(s(,)) m m freq=.ghz db(s(,))= StabFact nf()..5. m freq=.ghz nf()=.49 m db(s(,)) db(s(,)) Page 8
19 Stages ATF-677 Connected with 4.5 inches of 5ΩCoax db(s(,)) m m freq=.ghz db(s(,))= StabFact nf()..5. m freq=.ghz nf()=.54 m db(s(,)) db(s(,)) Simulation suggests potential stability concerns Page 9
20 Page Wireless Semiconductor Division Better approach is a WD5AGO integrated stage amplifier using an ATF-677 followed by an ATF-44 or ATF-544 MSTEP Step W=.mil W=.mil TL L=8.mil W=.mil 4 C=47.pF L=.5nH =.Ohm TL L=7.mil W=.mil =5Ohm L L = L=4nH V5 W=5.mil ho=. T=.7mil H=6.mil D=5.mil V6 W=5.mil ho=. T=.7mil H=6.mil D=5.mil V7 W=5.mil ho=. T=.7mil H=6.mil D=5.mil V8 W=5.mil ho=. T=.7mil H=6.mil D=5.mil V4 W=5.mil ho=. T=.7mil H=6.mil D=5.mil V W=5.mil ho=. T=.7mil H=6.mil D=5.mil V W=5.mil ho=. T=.7mil H=6.mil D=5.mil V W=5.mil ho=. T=.7mil H=6.mil D=5.mil MSUB MSub ough=mil TanD=. T=.7mil Hu=.9e+4mil Cond=.E+5 Mur= Er=4.5 H=6.mil MSub TL L=.mil W=.mil MSTEP Step W=.mil W=.mil INDQ L dc=.ohm Mode=proportionaltofreq F=.MHz Q=5. L=nH TL4 L=5.mil W=.mil TL5 L=5.mil W=.mil TL6 L=5.mil W=.mil C=pF L=.5nH =.Ohm 7 =75Ohm 6 =5Ohm TL7 L=7.mil W=.mil 9 C=47.pF L=.5nH =.Ohm 8 C=.pF L=.5nH =.Ohm Term Term Noise=yes Z=5Ohm Num= 5 =Ohm 7 C=47pF L=.5nH =.Ohm 6 C=47pF L=.5nH =.Ohm SP SNP File="C:\S_DATA\FET\f44e.sp" ef 4 =5Ohm TL L=5.mil W=8.mil 5 C=.pF L=.5nH =.Ohm TL L=5.mil W=8.mil TL9 L=.mil W=8.mil =Ohm TL8 L=.mil W=8.mil TL L=5.mil W=.mil TL L=5.mil W=.mil StabFact StabFact StabFact=stab_fact(S) StabFact =47Ohm C=47.pF L=.5nH =.Ohm C=7.pF L=.5nH =.Ohm SP SNP File="C:\S_DATA\FET\F677A.SP" ef L L = L=47nH C=.pF L=.5nH =.Ohm Term Term Noise=yes Z=5Ohm Num= esistive Loading Source Inductance
21 ADS Optimized ATF-677 First Stage L L L=4 nh = TL8 SP W=5. mil SNP L=5. mil File="C:\S_DATA\FET\F677A.SP" TL9 W=8. mil L=5. mil TL W=8. mil L=5. mil Term Term Num= Z=5 Ohm Noise=yes MSub MSUB MSub H= mil Er=4.5 Mur= Cond=.E+5 Hu=.9e+4 mil T=.7 mil TanD=. ough= mil =. Ohm L=.5 nh C=. pf =. Ohm L=.5 nh C=. pf =. Ohm L=.4 nh C= pf L L L=47 nh = =5 Ohm ef TL W=. mil L=5. mil V D=5. mil H=. mil T=.7 mil ho=. W=5. mil TL W=. mil L=5. mil V D=5. mil H=. mil T=.7 mil ho=. W=5. mil = Ohm V D=5. mil H=. mil T=.7 mil ho=. W=5. mil TL W=5. mil L=5. mil V4 D=5. mil H=. mil T=.7 mil ho=. W=5. mil =5 Ohm MSTEP Step W=5. mil W=. mil TL 4 =. Ohm W=. mil L=.4 nh L=5 mil C= pf 5 =. Ohm L=.5 nh C= pf Page
22 ADS Optimized ATF-677 First Stage nf() StabFact m m freq= nf()=.54 m5.ghz m5 freq= 9.MHz StabFact= db(s(,)) db(s(,)) db(s(,)) m m m freq=.ghz db(s(,))= m m4 freq=.ghz db(s(,))= m freq=.ghz db(s(,))= This is about the best that can be had in stability if NF is not to be compromised Page
23 Let s take a look at second stage candidates ATF-677 u gate width depletion mode device ATF u gate width depletion mode device ATF-4 8 u gate width depletion mode device ATF u gate width enhancement mode device Other candidates Page
24 Optimized ATF-544 Second Stage nf() m m freq= nf()=.49.ghz db(s(,)) db(s(,)) m m m freq=.ghz db(s(,))=-7.98 m4 freq=.ghz db(s(,))=-4.84 Sta bfact m5 m5 freq= 4.MHz StabFact=.4 db(s(,)) m m freq=.ghz db(s(,))= Page 4
25 Optimized ATF-544 Second Stage TL W=55. mil L=. mil TL TL6 SP W=. mil SNP W=5. mil L=. mil File="C:\S_DATA\FET\af544d[].sp" L=5. mil TL5 W=8. mil L=5. mil TL4 W=8. mil L=5. mil 5 =. Ohm L=.5 nh C=. pf MSTEP TL4 Step INDQ W=. mil L W=. mil L=5. mil L= nh W=. mil Q=5. F=. MHz Mode=proportional to freq dc=. Ohm 4 = Ohm 7 =. Ohm L=.4 nh C= pf V8 D=5. mil H=. mil T=.7 mil ho=. W=5. mil ef TL6 W=. mil L=45. mil V7 D=5. mil H=. mil T=.7 mil ho=. W=5. mil TL5 W=. mil L=45. mil V6 D=5. mil H=. mil T=.7 mil ho=. W=5. mil 8 = Ohm TL7 W=5. mil L=5. mil V5 D=5. mil H=. mil T=.7 mil ho=. W=5. mil 9 =5 Ohm MSTEP Step W=5. mil W=. mil 8 =. Ohm L=.5 nh C=6.8 pf TL8 =. Ohm W=. mil L=.4 nh L=5 mil C= pf = Ohm =. Ohm L= nh C= pf Page 5
26 Page 6 Wireless Semiconductor Division ATF-677 cascaded with improved ATF-544 Second Stage 5 C=.65pF L=.5nH =.Ohm TL L=.mil W=55.mil TL L=5.mil W=8.mil C=.pF L=.5nH =.Ohm 4 C=pF L=.4nH =.Ohm TL L=5mil W=.mil MSTEP Step W=.mil W=5.mil TL L=5.mil W=5.mil =5Ohm C=pF L=.4nH =.Ohm =5Ohm C=.pF L=.5nH =.Ohm TL L=5.mil W=.mil TL L=5.mil W=.mil =Ohm TL8 L=5.mil W=5.mil TL9 L=5.mil W=8.mil V4 W=5.mil ho=. T=.7mil H=.mil D=5.mil V W=5.mil ho=. T=.7mil H=.mil D=5.mil V W=5.mil ho=. T=.7mil H=.mil D=5.mil V W=5.mil ho=. T=.7mil H=.mil D=5.mil L L = L=4nH SP SNP File="C:\S_DATA\FET\F677A.SP" ef L L = L=47nH TL6 L=5.mil W=5.mil TL L=.mil W=.mil TL5 L=45.mil W=.mil TL6 L=45.mil W=.mil TL4 L=5.mil W=.mil 4 =Ohm INDQ L dc=.ohm Mode=proportionaltofreq F=.MHz Q=5. L=nH 7 C=pF L=.4nH =.Ohm 8 =Ohm 8 C=6.8pF L=.5nH =.Ohm MSTEP Step W=.mil W=5.mil TL7 L=5.mil W=5.mil C=pF L=nH =.Ohm =Ohm TL4 L=5.mil W=8.mil Term Term Noise=yes Z=5Ohm Num= C=pF L=.4nH =.Ohm TL8 L=5mil W=.mil 9 =5Ohm TL5 L=5.mil W=8.mil MSTEP Step W=.mil W=.mil V7 W=5.mil ho=. T=.7mil H=.mil D=5.mil V8 W=5.mil ho=. T=.7mil H=.mil D=5.mil V5 W=5.mil ho=. T=.7mil H=.mil D=5.mil V6 W=5.mil ho=. T=.7mil H=.mil D=5.mil SP SNP File="C:\S_DATA\FET\af544d[].sp" ef MSUB MSub ough=mil TanD=. T=.7mil Hu=.9e+4mil Cond=.E+5 Mur= Er=4.5 H=mil MSub Term Term Noise=yes Z=5Ohm Num=
27 ATF-677 cascaded with improved ATF-544 Second Stage nf() StabFact m m freq= nf()=.59 m5.ghz m5 freq=.59ghz StabFact= db(s(,)) db(s(,)) db(s(,)) m m m freq=.ghz db(s(,))=-4.94 m m freq=.ghz db(s(,))=7.878 m4 freq=.ghz db(s(,))= Still some concern about stability Page 7
28 Page 8 Wireless Semiconductor Division ATF-677 ATF-544 Cascade with Further Improvements TL L=5.mil W=.mil TL L=5.mil W=.mil 5 C=.pF L=.5nH =.Ohm =Ohm =7Ohm MSTEP Step W=.mil W=.mil MTEE_ADS Tee W=5.mil W=.mil W=5.mil TL4 L=.mil W=.mil INDQ L dc=.ohm Mode=proportionaltofreq F=.MHz Q=5. L=47nH TL L=.mil W=5.mil 7 C=pF L=.4nH =.Ohm 4 =5Ohm TL L=5.mil W=5.mil TL L=.mil W=5.mil TL5 L=45.mil W=.mil TL6 L=45.mil W=.mil TL L=mil W=.mil MSTEP Step W=.mil W=.mil TL L=.mil W=.mil 4 C=pF L=.4nH =.Ohm TL L=.mil W=5.mil MTEE_ADS Tee W=5.mil W=5.mil W=5.mil TL L=5.mil W=5.mil TL9 L=5.mil W=5.mil TL8 L=5.mil W=5.mil TL9 L=5.mil W=5.mil =5Ohm C=pF L=.4nH =.Ohm C=5.6pF L=.5nH =.Ohm C=.pF L=.5nH =.Ohm V4 W=5.mil ho=. T=.7mil H=.mil D=5.mil V W=5.mil ho=. T=.7mil H=.mil D=5.mil V W=5.mil ho=. T=.7mil H=.mil D=5.mil V W=5.mil ho=. T=.7mil H=.mil D=5.mil L L = L=4nH SP SNP File="C:\S_DATA\FET\F677A.SP" ef L L = L=47nH TL6 L=5.mil W=5.mil 8 =Ohm 8 C=6.8pF L=.5nH =.Ohm MSTEP Step W=.mil W=5.mil TL7 L=5.mil W=5.mil C=pF L=nH =.Ohm =Ohm TL4 L=5.mil W=8.mil Term Term Noise=yes Z=5Ohm Num= C=pF L=.4nH =.Ohm TL8 L=5mil W=.mil 9 =5Ohm TL5 L=5.mil W=8.mil V7 W=5.mil ho=. T=.7mil H=.mil D=5.mil V8 W=5.mil ho=. T=.7mil H=.mil D=5.mil V5 W=5.mil ho=. T=.7mil H=.mil D=5.mil V6 W=5.mil ho=. T=.7mil H=.mil D=5.mil SP SNP File="C:\S_DATA\FET\af544d[].sp" ef MSUB MSub ough=mil TanD=. T=.7mil Hu=.9e+4mil Cond=.E+5 Mur= Er=4.5 H=mil MSub Term Term Noise=yes Z=5Ohm Num=
29 ATF-677 ATF-544 Cascade with Further Improvements Page 9 nf() StabFact m m freq= nf()=.77 m5.ghz m5 freq=.8ghz StabFact= db(s(,)) db(s(,)) db(s(,)) m m m freq=.ghz db(s(,))= m m freq=.ghz db(s(,))=4.4 m4 freq=.ghz db(s(,))= At this point d = 7 ohms to get K= but NF.77. This is the best that can be done with ATF-677 driving ATF-544.
30 What would make a better second stage? Maybe a MMIC The WLAN and WiMAX markets have forced semiconductor manufacturers to build sub db noise figure MMICs these might make a good second stage but.. Most are in nasty little hard to see packages with no leads except maybe the MGA-656 Page
31 Effects of nd Stage db NFs System NF with db gain st Stage st NF nd Stage NF Page
32 MGA-656 Low Noise Amplifier Input MGA pf 47 pf 6 4 Output,,5 47 nh 47 pf 5. uf 4 ma Page
33 MGA-656 Measured Demo Board Performance nf() db(s(,)) db(s(,)) m m 4 m freq= 8.MHz nf()=.84 m5 m8 m freq=.5ghz nf()=.5 m6 m7 StabFact db(s(,)) m m m5 freq= 8.MHz db(s(,))=-9.69 m8 freq= 8.MHz db(s(,))=-.64 m6 freq=.5ghz db(s(,))=-8.64 m7 freq=.5ghz db(s(,))= m freq= 8.MHz db(s(,))=.4 m4 Not bad for a MMIC! freq=.5ghz db(s(,))=.6 Page
34 ADS Simulation with ATF-677 MGA-656 Cascade nf() m freq=.ghz nf()=.48 m db(s(,)) db(s(,)) m m m freq=.ghz db(s(,))= m4 freq=.ghz db(s(,))=-8.87 StabFact m5 m5 freq=.95ghz StabFact= db(s(,)) m m freq=.ghz db(s(,))= I don t believe K is a problem at 6 GHz but if it is a little d will help Page 4
35 ADS Simulation with ATF-677 MGA-656 Cascade m6 db(s(,)) db(s(,)) m m6 freq=.ghz db(s(,))= m7 freq=.ghz db(s(,))=-8.87 Page 5
36 ADS Simulation with ATF-677 MGA-656 Cascade L L L=4 nh = TL8 SP W=5. mil SNP L=5.mil File="C:\S_DATA\FET\F677A.SP" TL9 W=5.mil L=5. mil TL W=5. mil L=5.mil SP SNP File="C:\S_DATA\MGA-656\m656c[].sp" MTEE_ADS Tee W=5. mil W=5. mil W=5. mil TL6 W=5. mil L=5.mil TL4 W=5. mil L=5. mil Term Term Num= Z=5 Ohm Noise=yes MSub MSUB MSub H= mil Er=4.5 Mur= Cond=.E+5 Hu=.9e+4mil T=.7mil TanD=. ough= mil =. Ohm L=.5 nh C=5.6 pf =. Ohm L=.5 nh C=. pf =. Ohm L=.4 nh C= pf L L L=47nH = TL W=. mil L=5.mil TL9 W=5. mil L=5.mil V D=5. mil H=. mil T=.7 mil ho=. =5Ohm W=5.mil ef V D=5. mil H=. mil T=.7 mil ho=. W=5. mil TL W=. mil L=5.mil =Ohm V D=5. mil H=. mil T=.7mil ho=. W=5. mil MTEE_ADS Tee W=5. mil W=5. mil W=5. mil V4 D=5. mil H=. mil T=.7 mil ho=. W=5.mil TL W=5. mil L=. mil =75Ohm TL W=.mil L=. mil MSTEP Step W=. mil W=. mil TL W=.mil L= mil 5 =. Ohm L=.5nH C= pf 4 =.Ohm L=.4 nh C=pF TL W=5. mil L=5.mil ef V D=5. mil H=. mil T=.7mil ho=. W=5. mil TL W=5.mil L=5. mil V9 D=5. mil H=. mil T=.7mil ho=. W=5. mil = Ohm TL5 W=5. mil L=. mil INDQ L4 L= nh Q=5. F=. MHz Mode=proportional tofreq dc=. Ohm 4 =.5 Ohm L=.4nH C= pf 5 =.5 Ohm L=.4nH C=pF =. Ohm L=.5nH C=5.6 pf Term Term Num= Z=5 Ohm Noise=yes This is the approach taken for a new WD5AGO LNA Page 6
37 Stage ATF-677 & MGA-656 LNA Page 7
38 Stage ATF-677 & MGA-656 # Measured esults db(s(,)) db(s(,)) m m freq=.ghz db(s(,))=7.8 db(s(,)) db(s(,)) m m StabFact StabFact m freq=.ghz m freq=.ghz db(s(,))=-5.4 db(s(,))= m m4 freq=.5ghz StabFact=.97 NF measured.5 db at 96 MHz. K at low frequency erroneous due to lack of S due to poor dynamic range in test equipment. Tough when LNA has 7 db gain! Page 8
39 AP Note 8 Single Stage ATF-677 Measured esults m m db(s(,)) db(s(,)) db(s(,)) db(s(,)) m St abfact m freq=.ghz db(s(,))= Sta bfact m freq=.ghz db(s(,))= m4 m freq=.ghz db(s(,))= m4 freq= 98.MHz StabFact=.6 Page 9
40 Stage ATF-677 & MGA-656 in Enclosure 4 m db(s(,)) db(s(,)) - -4 db(s(,)) db(s(,)) - - m m -6 - Page 4 StabFact m freq=.ghz db(s(,))= StabFact m freq=.ghz db(s(,))= m4 m freq=.ghz db(s(,))= m4 freq= 98.MHz StabFact=.7
41 Stage ATF-677 & MGA-656 in Enclosure without Lid 4 m m -5 m db(s(,)) db(s(,)) - -4 db(s(,)) db(s(,)) Page 4 StabFact m freq=.ghz db(s(,))= StabFact m freq=.ghz db(s(,))= m4 m freq=.ghz db(s(,))= m4 freq= 98.MHz StabFact=.
42 Stage ATF-677 & MGA-656 in Enclosure with Metal Divider Spanning Length of Box db(s(,)) db(s(,)) m db(s(,)) db(s(,)) m m -6-4 StabFact m freq=.ghz db(s(,))= m freq=.ghz db(s(,))=-6.8 Metal divider breaks up waveguide moding effect of box StabF act m4 m freq=.ghz db(s(,))= m4 freq= 98.MHz StabFact=.8 Page 4
43 Original Stage LNA with ATF-677 and ATF-86 4 m -5 m m db(s(,)) db(s(,)) - -4 db(s(,)) db(s(,)) Stab Fact m freq=.ghz db(s(,))= StabFact m freq=.ghz db(s(,))= m4 m freq=.ghz db(s(,))= m4 freq= 98.MHz StabFact=.748 Page 4
44 cm LNA Th - Tc NF db.5.4 Gain... 9 NE84 ATF677 FHC4 NE584 MGF495 MGF49 CFH8 ATF544 8 NF Th NF Tc G Th G Tc TH7 Page 44
45 Summary The MGA-656 provided the additional gain desired while providing a lower noise higher IP second stage LNA noise figures of. db and 7 db of associated gain have been demonstrated Although the ATF-677 / MGA-656 cascade has been shown to provide K greater than, the increased gain is providing new challenges in enclosure design. Any Questions? Page 45
L - S Band Low Noise Amplifiers Designs is Cooling Necessary? Tommy Henderson WD5AGO
L - S Band Low Noise Amplifiers Designs is Cooling Necessary? Tommy Henderson WD5AGO What s New in Low Noise Devices? phemt Devices have lower noise figures in the 10 to 20 GHz spectrum but little has
Application Note 5057
A 1 MHz to MHz Low Noise Feedback Amplifier using ATF-4143 Application Note 7 Introduction In the last few years the leading technology in the area of low noise amplifier design has been gallium arsenide
Application Note 5379
VMMK-1225 Applications Information Application Note 5379 Introduction The Avago Technologies VMMK-1225 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in the
A 400, 900, and 1800 MHz Buffer/Driver Amplifier using the HBFP-0450 Silicon Bipolar Transistor
A 4, 9, and 18 MHz Buffer/Driver Amplifier using the HBFP-4 Silicon Bipolar Transistor Application Note 16 Introduction Avago Technologies HBFP-4 is a high performance isolated collector silicon bipolar
Application Note 5499
MGA-31389 and MGA-31489 High-Gain Driver Amplifier Using Avago MGA-31389 and MGA-31489 Application Note 5499 Introduction The MGA-31389 and MGA-31489 from Avago Technologies are.1 Watt flat-gain driver
Application Note 5446
Design the Avago MGA-31T6 into a High Gain, Low Noise, Low current GPS LNA Module Application Note 446 Introduction The MGA-31T6 is a low cost and easy-to-use GaAs LNA (Low Noise Amplifier). The LNA is
ATF-531P8 E-pHEMT GaAs FET Low Noise Amplifier Design for 800 and 900 MHz Applications. Application Note 1371
ATF-31P8 E-pHEMT GaAs FET Low Noise Amplifier Design for 8 and 9 MHz Applications Application Note 1371 Introduction A critical first step in any LNA design is the selection of the active device. Low cost
Application Note 1299
A Low Noise High Intercept Point Amplifier for 9 MHz Applications using ATF-54143 PHEMT Application Note 1299 1. Introduction The Avago Technologies ATF-54143 is a low noise enhancement mode PHEMT designed
High Intercept Low Noise Amplifier for 1.9 GHz PCS and 2.1 GHz W-CDMA Applications using the ATF Enhancement Mode PHEMT
High Intercept Low Noise Amplifier for 1.9 GHz PCS and 2.1 GHz W-CDMA Applications using the ATF-55143 Enhancement Mode PHEMT Application Note 1241 Introduction Avago Technologies ATF-55143 is a low noise
Low Noise Amplifier for 3.5 GHz using the Avago ATF Low Noise PHEMT. Application Note 1271
Low Noise Amplifier for 3. GHz using the Avago ATF-3143 Low Noise PHEMT Application Note 171 Introduction This application note describes a low noise amplifier for use in the 3.4 GHz to 3.8 GHz wireless
Application Note 5488
MGA-31289 High-Gain, High-Linearity Driver Amplifier Application Note 5488 Introduction The MGA-31289 is a highly linear enhancement-mode pseudomorphic high electron mobility transistor (E-pHEMT) amplifier
1 of 7 12/20/ :04 PM
1 of 7 12/20/2007 11:04 PM Trusted Resource for the Working RF Engineer [ C o m p o n e n t s ] Build An E-pHEMT Low-Noise Amplifier Although often associated with power amplifiers, E-pHEMT devices are
Application Note 1285
Low Noise Amplifiers for 5.125-5.325 GHz and 5.725-5.825 GHz Using the ATF-55143 Low Noise PHEMT Application Note 1285 Description This application note describes two low noise amplifiers for use in the
Application Note 5460
MGA-89 High Linearity Amplifier with Low Operating Current for 9 MHz to. GHz Applications Application Note 6 Introduction The Avago MGA-89 is a high dynamic range amplifier designed for applications in
Surface Mount SOT-363 (SC-70) Package. Pin Connections and Package Marking GND. V dd. Note: Package marking provides orientation and identification.
GHz V Low Current GaAs MMIC LNA Technical Data MGA-876 Features Ultra-Miniature Package.6 db Min. Noise Figure at. GHz. db Gain at. GHz Single + V or V Supply,. ma Current Applications LNA or Gain Stage
Application Note 5011
MGA-62563 High Performance GaAs MMIC Amplifier Application Note 511 Application Information The MGA-62563 is a high performance GaAs MMIC amplifier fabricated with Avago Technologies E-pHEMT process and
Data Sheet. MGA-632P8 Low Noise, High Linearity Active Bias Low Noise Amplifier. Features. Description. Specifications.
MGA-632P8 Low Noise, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Avago Technologies MGA-632P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier (LNA) with active bias.
T he noise figure of a
LNA esign Uses Series Feedback to Achieve Simultaneous Low Input VSWR and Low Noise By ale. Henkes Sony PMCA T he noise figure of a single stage transistor amplifier is a function of the impedance applied
800 to 950 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors. Application Note 1161
8 to 95 MHz Amplifiers using the HBFP-45 and HBFP-42 Low Noise Silicon Bipolar Transistors Application Note 1161 Introduction Hewlett-Packard s HBFP-45 and HBFP-42 are high performance isolated collector
Application Note No. 027
Application Note, Rev. 2.0, Jan. 2007 Application Note No. 027 Using the BGA420 Si MMIC Amplifier for Various UHF Applications from 300 MHz to 2.5 GHz RF & Protection Devices Edition 2007-01-11 Published
ATF High Intercept Low Noise Amplifier for the MHz PCS Band using the Enhancement Mode PHEMT
ATF-54143 High Intercept Low Noise Amplifier for the 185 191 MHz PCS Band using the Enhancement Mode PHEMT Application Note 1222 Introduction Avago Technologies ATF-54143 is a low noise enhancement mode
This article describes the design of a multiband,
A Low-Noise Amplifier for 2 GHz Applications Using the NE334S01 Transistor By Ulrich Delpy NEC Electronics (Europe) This article describes the design of a multiband, low-noise amplifier (LNA) using the
Millimeter Wave Electronics. Spring Assignment Week 7-8 Power Amplifier Design. Due: Tuesday, June 10, 9:45 11:45 a.m.
EE-711 Millimeter Wave Electronics Spring 24 Assignment Week 7-8 Power Amplifier Design Due: Tuesday, June 1, 9:45 11:45 a.m. Bo Zhao Ping Chen 1. Requirements and parameters Zg and Z L impedance of 5
87x. MGA GHz 3 V Low Current GaAs MMIC LNA. Data Sheet
MGA-876 GHz V Low Current GaAs MMIC LNA Data Sheet Description Avago s MGA-876 is an economical, easy-to-use GaAs MMIC amplifier that offers low noise and excellent gain for applications from to GHz. Packaged
Data Sheet. MGA Current-Adjustable, Low Noise Amplifier. Description. Features. Specifications at 500 MHz; 3V, 10 ma (Typ.
MGA-5 Current-Adjustable, Low Noise Amplifier Data Sheet Description Avago Technologies MGA-5 is an economical, easy-to-use GaAs MMIC amplifier that offers excellent linearity and low noise figure for
Application Note 1131
Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Avago Technologies AT-32063 dual low noise silicon
Data Sheet. MGA-231T6 High-Gain GPS LNA with Variable Current and Shutdown Function 31YM. Description. Features
MGA-231T6 High-Gain GPS LNA with Variable Current and Shutdown Function Data Sheet Description Avago Technologies MGA-231T6 is a low-noise amplifier (LNA) designed for GPS/ISM/Wimax applications in the
MGA GHz 3 V, 17 dbm Amplifier. Data Sheet
MGA-853.1 GHz 3 V, 17 dbm Amplifier Data Sheet Description Avago s MGA-853 is an economical, easy-to-use GaAs MMIC amplifier that offers excellent power and low noise figure for applications from.1 to
ATF-531P8 900 MHz High Linearity Amplifier. Application Note 1372
ATF-531P8 9 MHz High Linearity Amplifier Application Note 1372 Introduction This application note describes the design and construction of a single stage 85 MHz to 9 MHz High Linearity Amplifier using
Data Sheet. MGA GHz 3 V, 14 dbm Amplifier. Description. Features. Applications. Simplified Schematic
MGA-8153.1 GHz 3 V, 1 dbm Amplifier Data Sheet Description Avago s MGA-8153 is an economical, easy-to-use GaAs MMIC amplifier that offers excellent power and low noise figure for applications from.1 to
Application Note 5012
MGA-61563 High Performance GaAs MMIC Amplifier Application Note 5012 Application Information The MGA-61563 is a high performance GaAs MMIC amplifier fabricated with Avago Technologies E-pHEMT process and
MGA GHz 3 V, 17 dbm Amplifier. Data Sheet. Features. Description. Applications. Surface Mount Package. Simplified Schematic
MGA-853.1 GHz 3 V, 17 dbm Amplifier Data Sheet Description Avago s MGA-853 is an economical, easy-to-use GaAs MMIC amplifier that offers excellent power and low noise figure for applications from.1 to
Features. Specifications. Applications
MGA-3889 4MHz - 26MHz Flat Gain High Linearity Gain Block Data Sheet Description Avago Technologies MGA-3889 is a broadband, flat gain, high linearity gain block MMIC amplifier achieved through the use
Application Note 5303
MGA-6P8 9 MHz low noise amplifier using MGA-6P8 Application Note 5 Introduction The MGA-6P8 is a GaAs EPHEMT with an integrated active bias. The target applications are Tower Mounted Amplifier / Main LNA
Surface Mount SOT-363 (SC-70) Package. Pin Connections and Package Marking 4 V CC. Note: Package marking provides orientation and identification.
1.5 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-52063 Features Ultra-Miniature Package Single 5 V Supply (30 ma) 22 db Gain 8 dbm P 1dB Unconditionally Stable Applications Amplifier for Cellular,
Application Note 1360
ADA-4743 +17 dbm P1dB Avago Darlington Amplifier Application Note 1360 Description Avago Technologies Darlington Amplifier, ADA-4743 is a low current silicon gain block RFIC amplifier housed in a 4-lead
MGA Current Adjustable Low Noise Amplifier
Products > RF ICs/Discretes > RF ICs > GaAs Amplifiers, Mixers, Switches > MGA-68563 MGA-68563 Current Adjustable Low Noise Amplifier Description The MGA-68563 is an easy to use, economical GaAs MMIC amplifier
MGA Low Noise Amplifier. Data Sheet. Features. Description. Applications. Surface Mount Package SOT-343 /4-lead SC70. Simplified Schematic
MGA-243 Low Noise Amplifier Data Sheet Description Avago Technologies MGA-243 is an economical, easyto-use GaAs MMIC Low Noise Amplifier (LNA), which is designed for use in LNA and driver stages. While
MGA MHz to 6 GHz High Linear Amplifier
MGA-343 MHz to 6 GHz High Linear Amplifier Data Sheet Description Avago Technologies s MGA-343 is a high dynamic range low noise amplifier MMIC housed in a 4-lead SC-7 (SOT- 343) surface mount plastic
Application Note 5295
MGA-63P8 1.9 GHz low noise amplifier using MGA-63P8 Application Note 595 Introduction The MGA-63P8 is a GaAs EPHEMT with an integrated active bias. The target applications are Tower Mounted Amplifier /
ADS Application Notes. The Design of Oscillator Using ADS
ADS Application Notes Wireless Communication Laboratory Department of Electrical and Electronic Engineering Hong Kong University of Science and Technology The Design of Oscillator Using ADS Introduction
MGA-635P8 Ultra Low Noise, High Linearity Low Noise Amplifier. Features. Specifications. Applications. RFin
MGA-3P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Avago Technologies MGA-3P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier (LNA). The LNA has low noise and
ABA GHz Broadband Silicon RFIC Amplifier. Application Note 1349
ABA-52563 3.5 GHz Broadband Silicon RFIC Amplifier Application Note 1349 Introduction Avago Technologies ABA-52563 is a low current silicon gain block RFIC amplifier housed in a 6-lead SC 70 (SOT- 363)
Main Sources of Electronic Noise
Main Sources of Electronic Noise Thermal Noise - It is always associated to dissipation phenomena produced by currents and voltages. It is represented by a voltage or current sources randomly variable
MGA Low Noise Amplifier. Data Sheet. 42x. Features. Description. Applications. Surface Mount Package SOT-343 /4-lead SC70. Simplified Schematic
MGA-243 Low Noise Amplifier Data Sheet Description Avago Technologies MGA-243 is an economical, easyto-use GaAs MMIC Low Noise Amplifier (LNA), which is designed for use in LNA and driver stages. While
AT General Purpose, Low Current NPN Silicon Bipolar Transistor. Data Sheet
AT-4532 General Purpose, Low Current NPN Silicon Bipolar Transistor Data Sheet Description Avago s AT-4532 is a general purpose NPN bipolar transistor that has been optimized for maximum f t at low voltage
Application Note 5245
.0 GHz high-linearity second stage LNA/ driver using the ATF-589 Application Note 545 Introduction Avago Technologies ATF-589 is a high linearity, medium power, low noise E-pHEMT FET in a low cost surface
MGA High Gain, High Linearity, Very Low Noise Amplifier. Features. Specifications. Applications. All other pins NC Not Connected
MGA- High Gain, High Linearity, Very Low Noise Amplifier Data Sheet Description Avago Technologies MGA- is a two stage, easy-touse GaAs MMIC Low Noise Amplifier (LNA). The LNA has low noise with good input
Using the ATF in Low Noise Amplifier Applications in the UHF through 1.7 GHz Frequency Range. Application Note 1076
Using the ATF-10236 in Low Noise Amplifier Applications in the UHF through 1.7 GHz Frequency Range Application Note 1076 Introduction GaAs FET devices are typically used in low-noise amplifiers in the
MGA-725M4 Low Noise Amplifier with Bypass Switch In Miniature Leadless Package. Data Sheet. Description. Features. Applications
MGA-75M Low Noise Amplifier with Bypass Switch In Miniature Leadless Package Data Sheet Description Broadcom's MGA -75M is an economical, easy-to-use GaAs MMIC Low Noise Amplifier (LNA), which is designed
10 GHz LNA for Amateur Radio by K5TRA
Introduction Ham radio operation on 10 GHz is somewhat exotic. This is far removed from global short-wave communication below 30 MHz, or regional VHF and UHF communication. Despite the arcane nature of
Data Sheet. MGA-685T6 Current-Adjustable, Low Noise Amplifier. Description. Features. Specifications at 500 MHz; 3V 10 ma (Typ.
MGA-685T6 Current-Adjustable, Low Noise Amplifier Data Sheet Description The MGA-685T6 is an easy to use GaAs MMIC amplifier that offer excellent linearity and low noise figure for application from.1 to
Application Note 1373
ATF-511P8 900 MHz High Linearity Amplifier Application Note 1373 Introduction Avago s ATF-511P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 41
Data Sheet. 3Px. ATF Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package. Features. Description
ATF-33143 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Avago s ATF-33143 is a high dynamic range, low noise PHEMT housed in a 4-lead SC-7 (SOT-343) surface mount
Designing an LNA for a CDMA front end
signal processing Designing an LNA for a CDMA front end LNA design is critical in modern communication systems. Understanding necessary additional design considerations can save both time and money. The
ATF-501P8. Application Note MHz High Linearity Amplifier
ATF-501P8 450 MHz High Linearity Amplifier Application Note 5058 ATF-501P8 Applications Information Description Avago Technologies ATF-501P8 is an enhancement mode PHEMT designed for high linearity and
Data Sheet. VMMK GHz Positive Gain Slope Low Noise Amplifier in SMT Package. Features. Description
VMMK-3603 1-6 GHz Positive Gain Slope Low Noise Amplifier in SMT Package Data Sheet Description The VMMK-3603 is a small and easy-to-use, broadband, positive gain slope low noise amplifier operating in
Data Sheet. 4Fx. ATF Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package. Features. Description
ATF-54143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Avago Technologies ATF 54143 is a high dynamic range, low noise, E-PHEMT housed in a 4
Agilent MGA MHz to 6 GHz High Linear Amplifier Data Sheet
Agilent MGA-343 MHz to 6 GHz High Linear Amplifier Data Sheet Features Very high linearity at low DC bias power [1] Low noise figure Advanced enhancement mode PHEMT technology Description Agilent Technologies
Application Note 5106
ATF-50189 2.4 GHz High-linearity Second-stage LNA/Driver using the ATF-50189 Application Note 5106 Introduction Avago Technologies ATF-50189 is a high linearity, medium power, low noise E-pHEMT FET in
Features. Specifications
MGA-30489 0.25W Driver Amplifier Data Sheet Description Avago Technologies s MGA-30489 is a 0.25W highly dynamic range Driver Amplifier MMIC, housed in a SOT-89 standard plastic package. The device features
MGA-634P8 Ultra Low Noise, High Linearity Low Noise Amplifier. Features. Specifications. Applications. RFin
MGA-3P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Avago Technologies MGA-3P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier (LNA). The LNA has low noise and
MGA-632P8 1.9 GHz low noise amplifier Application Note 5295
MGA-63P8 1.9 GHz low noise amplifier Application Note 595 Introduction The MGA-63P8 is a GaAs EPHEMT LNA with integrated active bias. The target applications are Tower Mounted Amplifiers and LNAs in cellular
Data Sheet. MGA Dual LNA for Balanced Application MHz. Features. Description. Typical Performances. Component Image.
MGA-16116 Dual LNA for Balanced Application 450 1450 MHz Data Sheet Description Avago Technologies MGA-16116 is an ultra low-noise high linearity amplifier pair with built-in active bias and shutdown features
HMC599ST89 / 599ST89E. Features. The HMC599ST89(E) is ideal for: = +25 C MHz. Gain Variation Over Temperature MHz 0.
HMCST / STE Typical Applications v2.3 GaAs phemt MMIC LNA, Ohm - 1 MHz Features The HMCST(E) is ideal for: High P1 Output Power: +1 m VHF / UHF Antennas HDTV Receivers CMTS Equipment CATV, Cable Modem
400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324
Data Sheet FEATURES Operation from MHz to MHz Gain of 14.6 db at 21 MHz OIP of 4.1 dbm at 21 MHz P1dB of 29.1 dbm at 21 MHz Noise figure of.8 db Dynamically adjustable bias Adjustable power supply bias:.
Data Sheet MGA High Gain, High Linearity Active Bias Low Noise Amplifier. Description. Features. Specifications
MGA-14516 High Gain, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Avago Technologies MGA-14516 is a two stage, easy-touse GaAs MMIC Low Noise Amplifier (LNA) with active bias.
Data Sheet. ALM GHz 1.0GHz 2 Watt High Linearity Amplifier. Description. Features. Specifications. Component Image.
ALM-32120 0.7GHz 1.0GHz 2 Watt High Linearity Amplifier Data Sheet Description Avago Technologies ALM-32120 is a high linearity 2 Watt PA with good OIP3 performance and exceptionally good PAE at 1dB gain
DESIGN APPLICATION NOTE --- AN011 SXT-289 Balanced Amplifier Configuration
DESIGN APPLICATION NOTE --- AN11 Abstract Increasing the data rate of communications channels within a fixed bandwidth forces an increase in amplifier linearity. Modulation and coding schemes are often
MGA High Gain, High Linearity, Very Low Noise Amplifier. Features. Specifications
MGA- High Gain, High Linearity, Very Low Noise Amplifier Data Sheet Description Avago Technologies MGA- is a two stage, easy-touse GaAs MMIC Low Noise Amplifier (LNA). The LNA has low noise with good input
Application Note 5482
MGA-31189 70 to 500 MHz Amplifier for IF Applications using the Avago Technologies MGA-31189 Amplifier Application Note 5482 Introduction The MGA-31189 is a highly linear, Enhancement mode phemt (Pseudomorphic
Design of Low Noise Amplifier Using Feedback and Balanced Technique for WLAN Application
Available online at www.sciencedirect.com Procedia Engineering 53 ( 2013 ) 323 331 Malaysian Technical Universities Conference on Engineering & Technology 2012, MUCET 2012 Part 1- Electronic and Electrical
0.1 6 GHz 3V, 17 dbm Amplifier. Technical Data MGA-82563
.1 6 GHz 3V, 17 dbm Amplifier Technical Data MGA-8563 Features +17.3 dbm P 1 db at. GHz + dbm P sat at. GHz Single +3V Supply. db Noise Figure at. GHz 13. db Gain at. GHz Ultra-miniature Package Unconditionally
Features. Parameter* Min. Typ. Max. Units Frequency Range GHz Gain 2 5 db. Gain Variation over Temperature
v3.1 HMC59MSGE AMPLIFIER,. -.9 GHz Typical Applications The HMC59MSGE is ideal for: DTV Receivers Multi-Tuner Set Top Boxes PVRs & Home Gateways Functional Diagram Features Single-ended or Balanced Output
1.0 6 GHz Ultra Low Noise Amplifier
1.0 6 GHz Ultra Low Noise Amplifier Features Frequency Range: 1.0-6 GHz 0.7 db mid-band Noise Figure 18 db mid band Gain 13dBm Nominal P1dB Bias current : 50mA 0.15-um InGaAs phemt Technology 16-Pin QFN
HMC639ST89 / 639ST89E
Typical Applications The HMC39ST9(E) is ideal for: Cellular / PCS / 3G WiMAX, WiBro, & Fixed Wireless CATV & Cable Modem Microwave Radio IF and RF Sections Functional Diagram Electrical Specifications,
Data Sheet. ALM GHz 3.9GHz 2 Watt High Linearity Amplifier. Description. Features. Component Image. Specifications WWYY XXXX
ALM-32320 3.3GHz 3.9GHz 2 Watt High Linearity Amplifier Data Sheet Description Avago Technologies ALM-32320 is a high linearity 2 Watt PA with good OIP3 performance and exceptionally good PAE at 1dB gain
N50. 1 GHz Low Noise Silicon MMIC Amplifier. Technical Data INA SOT-143 Surface Mount Package
GHz Low Noise Silicon MMIC Amplifier Technical Data INA- Features Internally Biased, Single V Supply (7 ma) 9 db Gain.6 db NF Unconditionally Stable Applications Amplifier for Cellular, Cordless, Special
ECG002 InGaP HBT Gain Block
Product Features DC 6 GHz 20 db Gain @ 1 GHz +15.5 dbm P1dB @ 1 GHz +29 dbm OIP3 @ 1 GHz 3.8 db Noise Figure Internally matched to 50 Ω Robust 1000V ESD, Class 1C Lead-free/green/RoHS-compliant SOT-86,
AM036MX-QG-R 1 WATT, 2 GHz POWER AMPLIFIER
AM036MX-QG-R 1 WATT, 2 GHz POWER AMPLIFIER AN136 January 2011 REV 3 INTRODUCTION This application note describes the design of a one-watt, single stage power amplifier at 2GHz using AMCOM s low cost surface
Features OBSOLETE. DC GHz GHz GHz GHz GHz
v2.71 HMC75ST9 / 75ST9E Typical Applications The HMC75ST9 / HMC75ST9E is an ideal RF/IF gain block & LO or PA driver: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio &
Application Note 5244
. GHz High-linearity Second-stage LNA/Driver using Avago Technologies' ATF-5389 Application Note 544 Introduction Avago Technologies ATF-5389 is a high linearity, medium power, low noise E-pHEMT FET in
Surface Mount SOT-363 (SC-70) Package. Pin Connections and Package Marking GND 1 4 V CC
GHz Low Noise Silicon MMIC Amplifier Technical Data INA-63 Features Ultra-Miniature Package Internally Biased, Single 5 V Supply (12 ma) db Gain 3 db NF Unconditionally Stable Applications Amplifier for
MGA Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package. Features. Applications. VBias
MGA-65606 Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package Data Sheet Description Avago Technologies MGA-65606 is an economical, easyto-use GaAs MMIC Low Noise Amplifier
RF/Microwave Circuits I. Introduction Fall 2003
Introduction Fall 03 Outline Trends for Microwave Designers The Role of Passive Circuits in RF/Microwave Design Examples of Some Passive Circuits Software Laboratory Assignments Grading Trends for Microwave
Surface Mount Package SOT-363 (SC-70) Pin Connections and Package Marking GND 1 5 GND. Note: Package marking provides orientation and identification.
.1 6 GHz 3 V, 1 dbm Amplifier Technical Data MGA-81563 Features +1.8 dbm P 1dB at. GHz +17 dbm P sat at. GHz Single +3V Supply.8 db Noise Figure at. GHz 1. db Gain at. GHz Ultra-miniature Package Unconditionally
Bachelor Thesis. Analogue Phase-Shifter Circuit for 7-Tesla Magnetic Resonance Tomograph (MRT)
Bachelor Thesis Analogue Phase-Shifter Circuit for 7-Tesla Magnetic Resonance Tomograph (MRT) by Poh Seng Pua Supervised by Prof. Dr. Ing Klaus Solbach Department of Microwave and RF- Technology University
Data Sheet ATF-511P8. High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm 2 LPCC [3] Package. 1Px. Features.
![Data Sheet ATF-511P8. High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm 2 LPCC [3] Package. 1Px. Features.](/thumbs/84/89103363.jpg "Data Sheet ATF-511P8. High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm 2 LPCC [3] Package. 1Px. Features.")
ATF-511P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm 2 LPCC [3] Package Data Sheet Description Avago Technologies s ATF-511P8 is a single-voltage high linearity, low noise E-pHEMT
The Design of E-band MMIC Amplifiers
The Design of E-band MMIC Amplifiers Liam Devlin, Stuart Glynn, Graham Pearson, Andy Dearn * Plextek Ltd, London Road, Great Chesterford, Essex, CB10 1NY, UK; (lmd@plextek.co.uk) Abstract The worldwide
ATF-551M4 Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package. Data Sheet. Description. Features.
ATF-551M4 Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Description Avago Technologies ATF-551M4 is a high dynamic range, super low noise, single supply E phemt
Data Sheet. MGA High Gain, High Linearity, Active Bias, Low Noise Amplifier. Description. Features. Specifications
MGA-13516 High Gain, High Linearity, Active Bias, Low Noise Amplifier Data Sheet Description Avago Technologies MGA-13516 is a two stage, easy-touse GaAs MMIC Low Noise Amplifier (LNA) with active bias.
HMC639ST89 / 639ST89E
v3.1 HMC63ST / 63STE AMPLIFIER,.2-4. GHz Typical Applications The HMC63ST(E) is ideal for: Cellular / PCS / 3G WiMAX, WiBro, & Fixed Wireless CATV & Cable Modem Microwave Radio IF and RF Sections Features
HMC580ST89 / 580ST89E. Features OBSOLETE. DC GHz GHz GHz. db db db Gain Variation Over Temperature DC GHz 0.
v.71 HMC5ST9 / 5ST9E Typical Applications The HMC5ST9 / HMC5ST9E is ideal forr: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment IF & RF Applications Functional
Maxim > Design Support > Technical Documents > Application Notes > Wireless and RF > APP 3571
Maxim > Design Support > Technical Documents > Application Notes > Wireless and RF > APP 3571 Keywords: automotive keyless entry, MAX2640, LNA, 315MHz, RKE, stability, automotive, keyless entry APPLICATION
Data Sheet. VMMK to 4 GHz GaAs High Linearity LNA in Wafer Level Package. Features. Description. Specifications (Vdd = 3.
VMMK-243 2 to 4 GHz GaAs High Linearity LNA in Wafer Level Package Data Sheet Description Avago s VMMK-243 is an easy-to-use, high linearity low noise amplifier in a miniaturized wafer level package (WLP).
Ceramic Packaged GaAs Power phemt DC-12 GHz
Ceramic Packaged GaAs Power phemt DC-12 GHz DESCRIPTION AMCOM s is a discrete GaAs phemt that has a total gate width of 1.mm. It is in a ceramic BH package for operating up to 12 GHz. The BH package has
Features. Specifications. Notes: Package marking provides orientation and identification 53 = Device Code X = Month of Manufacture = Pin 1
AVT-53663 DC 6000 MHz InGaP HBT Gain Block Data Sheet Description Avago Technologies AVT-53663 is an economical, easyto-use, general purpose InGaP HBT MMIC gain block amplifier utilizing Darlington pair
Features. Applications. Symbol Parameters/Conditions Units Min. Max.
AMMC - 622 6-2 GHz Low Noise Amplifier Data Sheet Chip Size: 17 x 8 µm (67 x 31. mils) Chip Size Tolerance: ± 1 µm (±.4 mils) Chip Thickness: 1 ± 1 µm (4 ±.4 mils) Pad Dimensions: 1 x 1 µm (4 ±.4 mils)
GHz Broadband Low Noise Amplifier
.5 4. GHz Broadband Low Noise Amplifier Features Frequency Range:.5-4 GHz 1.8 db Mid-band Noise Figure 12.5 db Nominal Gain Very Low operating current (2V/15mA) Ideal Replacement for discrete devices 1dBm
AM003536WM-BM-R AM003536WM-EM-R AM003536WM-FM-R
AM003536WM-BM-R AM003536WM-EM-R AM003536WM-FM-R DESCRIPTION AMCOM s is an ultra-broadband GaAs MMIC power amplifier. It has 22 db gain and 36dBm output power over the 0.01 to 3.5 GHz band. This MMIC is