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2 2013 By Engineers Institute of India ALL RIGHTS RESERVED. No part of this work covered by the copyright herein may be reproduced, transmitted, stored or used in any form or by any means graphic, electronic, or mechanical, including but not limited to photocopying, recording, scanning, digitizing, taping, Web distribution, information networks, or information storage and retrieval systems. Engineers Institute of India 28-B/7, Jia Sarai, Near IIT Hauz Khas New Delhi Tel: For publication information, visit ISBN: Price: Rs ENGINEERS INSTITUTE OF INDIA. All Rights Reserved Page 2 of 19

5 A word to the students Engineering services examination offers one of the most promising and prestigious careers for service to the nation. Over the past few years, it has become more competitive as a number of aspirants are increasingly becoming interested in government jobs due to decline in other career options. In my opinion, ESE rigorously tests candidates overall understanding of concepts, ability to apply their knowledge and personality level by screening them through various stages. A candidate is supposed to smartly deal with the syllabus not just mugging up concepts. Thorough understanding with critical analysis of topics and ability to express clearly are some of the pre-requisites to crack this exam. The syllabus and questioning pattern has remained pretty much the same over the years. Established in 2006 by a team of IES and GATE toppers, we at Engineers Institute of India have consistently provided rigorous classes and proper guidance to engineering students over the nation in successfully accomplishing their dreams. We believe in providing examoriented teaching methodology with updated study material and test series so that our students stay ahead in the competition. The faculty at EII are a team of experienced professionals who have guided thousands to aspirants over the years. They are readily available before and after classes to assist students and we maintain a healthy student-faculty ratio. Many current and past years toppers associate with us for contributing towards our goal of providing quality education and share their success with the future aspirants. Our results speak for themselves. Past students of EII are currently working in various departments and PSU s and pursuing higher specializations. We also give scholarships to meritorious students. A detailed solution of the past years conventional questions, prepared by toppers, will be available from January onwards. R.K. Rajesh Director Engineers Institute of India eii.rkrajesh@gmail.com 2013 ENGINEERS INSTITUTE OF INDIA. All Rights Reserved Page 5 of 19

TOPPER s VIEWS Engineering Services examination offers one of the most promising and fulfilling careers to the engineering graduates. ESE 2012 was my 2nd attempt.

6 TOPPER s VIEWS Engineering Services examination offers one of the most promising and fulfilling careers to the engineering graduates. ESE 2012 was my 2nd attempt. In ESE 2011, I was not able to score much in Conventional papers and so I gave more priority to Conventional papers this time. During my preparation, I realized that ES exam is not easy to crack particularly due to the subjective (or conventional) papers. The three stages of the exam checks the aspirant on various grounds like speed, accuracy and in-depth understanding of the core subjects of the concerned stream, in a very comprehensive way. The interview can be a little dicey. So I suggest the candidate should score as much as possible in written exams itself to minimize dependence on the interview. Mostly it is the subjective papers which affects qualification and if qualified, one s rank. Most candidates are not able to score good marks in subjective papers because one s speed of answering, style of presentation and relevance of answer s content matter a lot. But attempting all the questions in the conventional papers is not required. One needs to focus on one s stronger subjects and prepare in a selective way. That s why topic-wise selective approach to conventional papers is required. This book is the first of its kind to give the student an idea of weight-age of different topics on a year by year basis. Kunal Srivastava AIR -1 ESE 2012 AIR -44 GATE 2013 Electronics and Telecommunication Engineering GS+English Objective 1 Objective 2 Conventional 1 Conventional 2 Interview Total / ENGINEERS INSTITUTE OF INDIA. All Rights Reserved Page 6 of 19

7 SYLLABUS IES Conventional Paper-I (E & T) 1. MATERIALS AND COMPONENTS Structure and properties of Electrical Engineering materials; Conductors, Semiconductors and Insulators, magnetic, Ferroelectric, Piezoelectric, Ceramic, Optical and Superconducting materials. Passive components and characteristics Resistors, Capacitors and Inductors; Ferrites, Quartz crystal Ceramic resonators, Electromagnetic and Electromechanical components. 2. PHYSICAL ELECTRONICS, ELECTRON DEVICES AND ICs Electrons and holes in semiconductors, Carrier Statistics, Mechanism of current flow in a semiconductor, Hall effect; Junction theory; Different types of diodes and their characteristics; Bipolar Junction transistor; Field effect transistors; Power switching devices like SCRs, GTOs, power MOSFETS; Basics of ICs - bipolar, MOS and CMOS types; basic of Opto-Electronics. 3. SIGNALS AND SYSTEMS Classification of signals and systems: System modelling in terms of differential and difference equations; State variable representation; Fourier series; Fourier transforms and their application to system analysis; Laplace transforms and their application to system analysis; Convolution and superposition integrals and their applications; Z-transforms and their applications to the analysis and characterisation of discrete time systems; Random signals and probability, Correlation functions; Spectral density; Response of linear system to random inputs. 4. NETWORK THEORY Network analysis techniques; Network theorems, transient response, steady state sinusoidal response; Network graphs and their applications in network analysis; Tellegen s theorem. Two port networks; Z, Y, h and transmission parameters. Combination of two ports, analysis of common two ports. Network functions : parts of network functions, obtaining a network function from a given part. Transmission criteria: delay and rise time, Elmore s and other definitions effect of cascading. Elements of network synthesis. 5. ELECTROMAGNETIC THEORY Analysis of electrostatic and magnetostatic fields; Laplace s and Poisson s equations; Boundary value problems and their solutions; Maxwell s equations; application to wave propagation in bounded and unbounded media; Transmission lines : basic theory, standing waves, matching applications, microstrip lines; Basics of wave guides and resonators; Elements of antenna theory. 6. ELECTRONIC MEASUREMENTS AND INSTRUMENTATION Basic concepts, standards and error analysis; Measurements of basic electrical quantities and parameters; Electronic measuring instruments and their principles of working: analog and digital, comparison, characteristics, application. Transducers; Electronic measurements of non electrical quantities like temperature, pressure, humidity etc; basics of telemetry for industrial use ENGINEERS INSTITUTE OF INDIA. All Rights Reserved Page 7 of 19

8 IES Conventional Paper-II (E & T) 7. ANALOG ELECTRONIC CIRCUITS Transistor biasing and stabilization. Small signal analysis. Power amplifiers. Frequency response. Wide banding techniques. Feedback amplifiers. Tuned amplifiers. Oscillators. Rectifiers and power supplies. Op Amp, PLL, other linear integrated circuits and applications. Pulse shaping circuits and waveform generators. 8. DIGITAL ELECTRONIC CIRCUITS Transistor as a switching element; Boolean algebra, simplification of Boolean functions, Karnaugh map and applications; IC Logic gates and their characteristics; IC logic families : DTL, TTL, ECL, NMOS, PMOS and CMOS gates and their comparison; Combinational logic Circuits; Half adder, Full adder; Digital comparator; Multiplexer Demulti-plexer; ROM an their applications. Flip flops. R-S, J-K, D and T flip-flops; Different types of counters and registers Waveform generators. A/D and D/A converters. Semiconductor memories. 9. CONTROL SYSTEMS Transient and steady state response of control systems; Effect of feedback on stability and sensitivity; Root locus techniques; Frequency response analysis. Concepts of gain and phase margins: Constant-M and Constant-N Nichol s Chart; Approximation of transient response from Constant-N Nichol s Chart; Approximation of transient response from closed loop frequency response; Design of Control Systems, Compensators; Industrial controllers. 10. COMMUNICATIONS SYSTEMS Basic information theory; Modulation and detection in analogue and digital systems; Sampling and data reconstructions; Quantization & coding; Time division and frequency division multiplexing; Equalization; Optical Communication : in free space & fiber optic; Propagation of signals at HF, VHF, UHF and microwave frequency; Satellite Communication. 11. MICROWAVE ENGINEERING Microwave Tubes and solid state devices, Microwave generation and amplifiers, Waveguides and other Microwave Components and Circuits, Microstrip circuits, Microwave Antennas, Microwave Measurements, Masers, lasers; Microwave propagation. Microwave Communication Systems terrestrial and Satellite based. 12. COMPUTER ENGINEERING Number Systems. Data representation; Programming; Elements of a high level programming language PASCAL/C; Use of basic data structures; Fundamentals of computer architecture; Processor design; Control unit design; Memory organisation, I/o System Organisation. Microprocessors : Architecture and instruction set of Microprocessors 8085 and 8086, Assembly language Programming. Microprocessor based system design: typical examples. Personal computers and their typical uses ENGINEERS INSTITUTE OF INDIA. All Rights Reserved Page 8 of 19

9 ESE-2012 Objective papers cut-off marks (Out of 600 Marks) Marks Secured by the LAST candidate for the evaluation of conventional papers. Branch General OBC SC ST PH-1 PH-2 Civil Mechanical Electrical Electronics & Telecom ESE-2012 Interview / Personality Test call cut-off marks (Out of 1000 Marks) Marks Secured by the LAST written qualified candidate called for Personality Test Branch General OBC SC ST PH-1 PH-2 Civil Mechanical Electrical Electronics & Telecom ESE Final recruitment cut-off marks (Out of 1200 Marks) Branch General OBC SC ST PH-1 PH-2 Civil Mechanical Electrical Electronics & Telecom The number of candidates recommended for appointment are: (i) 269 candidates in Civil Engineering. (ii) 169 candidates in Mechanical Engineering. (iii) 103 candidates in Electrical Engineering. (iv) 94 candidates in Electronics & Telecommunication Engineering. A total number of 635 candidates recommended for appointments in ESE-2012 lists include 312 General, 183 OBC, 92 SC and 48 ST (including 46 candidates belonging to Physically Handicapped category) ENGINEERS INSTITUTE OF INDIA. All Rights Reserved Page 9 of 19

10 CONTENT IES Conventional Paper-I (E & T) MATERIALS AND COMPONENTS ELECTRONIC DEVICES & CIRCUITS SIGNALS & SYSTEM NETWORK THEORY ELECTROMAGNETIC THEORY MEASUREMENTS AND INSTRUMENTATION IES Conventional Paper-II (E & T) ANALOG ELECTRONICS COMMUNICATION ENGINEERING CONTROL SYSTEMS DIGITAL ELECTRONICS MICROWAVE ENGINEERING COMPUTER ENGINEERING ENGINEERS INSTITUTE OF INDIA. All Rights Reserved Page 10 of 19

12 1. MATERIALS AND COMPONENTS Papers-1992 to 2013 Paper A small sphere of polarizability α and radius a is placed at a distance r (>> a) from a conducting sphere of radius b which is maintained at a potential V. Find an expression for the force on the dielectric sphere. (8) Paper (a) An automotive radar operates at a frequency of 8 GHz. Determine the Doppler shift due to an automobile directly approaching the radar at a speed of 160 Km per hours. (8) (b) Calcium has a face-centered cubic structure with an ionic radius of 1.06 A. Calculate the inter-planar separation for (111) plane. (8) Paper A quartz crystal has a charge sensitivity of 2pC/N, ε r = 4.5, diameter of 10 mm and thickness 2 mm. What is its voltage sensitivity? Find the output voltage due to an applied force of 100 N. (Young s modulus = N/ m ) (8) Paper (a) Draw the electrical equivalent circuit of a Quartz Crystal explaining the significance of the various components of the circuit. (10) (b) Draw neat sketches of Impedance V s Frequency, Reactance Versus Frequency of the Quartz (c) resonator indicating the critical frequencies and their values. (10) A quartz crystal has the following electrical characteristics: Series resonance 200 khz Impedance at series resonance 200 ohms Parallel resonance at khz Impedance at parallel resonance 40 MΩ Determine the component values of the equivalent circuit. (20) Paper (a) What are Optoisolators? Where do they find application? Discuss their propagation delay, operating voltage range and power dissipation. (20) (b) With a sketch of characteristics, explain the features of a power MOSFET. (10) (c) The reverse recovery time t rr of a diode is 3 µ s. In a conducting mode to reverse blocking mode operation. It needs a diode current rate of fall of 30 Amps/ µ s. Determine (i) storage charge, QRR and (ii) peak reverse current, I RR. (10) 2013 ENGINEERS INSTITUTE OF INDIA. All Rights Reserved Page 12 of 19

13 2. ELECTRONIC DEVICES & CIRCUITS Papers-1992 to 2013 Paper State the relative merits of bipolar and field effect transistors. A field effect transistor is used as a simple common source amplifier. The gain of the amplifier is found to be 60 and 45 with load resistances of 20 k Ω and 60 k Ω respectively. Determine the drain resistance and trans conductance of the transistor. (17) Paper For a half-wave rectifier circuit, find the required a.c. voltage for getting a d.c. value of 150 V. The source and load resistances are 25 k Ω and 75 k Ω respectively. (8) 3. By drawing neat diagrams, explain the working of bipolar and field-effect transistors and state their relative merits. (17) Paper (a) Consider the circuit of figure. The diode is ideal. The input waveform is as shown. Find the voltage across the capacitor at 1 ms, 3 ms, 6 ms and 9 ms. (8) (b) A p-type material has an acceptor ion concentration of 10 3 concentration is / cm. The hole and electron mobilities are m / V- s respectiv 5. For the JFET in the circuit of figure. IDSS = 5 ma; Vpo Also in this circuit = 3V with usual notations per cm vely. Calculate the resistivity of the materials:. Its intrinsic carrier m / V- s and (17) (8) R D = 2 k Ω ; VDD = 15 V; R = s 8k Ω ; VG = 10V; and VSS = 8V. Calculate VGS and V o 28-B/7, Jia Sarai, Near IIT, Hauz Khas, New Delhi Ph ENGINEERS INSTITUTE OF INDIA. All Rights Reserved Page 13 of 19

14 6. A 5.2 V Zener diode has a maximum power dissipation of 260 mw. It maintains a constant voltage when the current though the diode does not fall below 10% of the maximum permissible current. A 15 V supply is given to the Zener through a series resistor R. Find the range for R so that the Zener maintains its constant voltage. Find the new range when the diode is loaded by 50 Ω load. 7. A silicon diode showed currents of 2 ma and 10 ma respectively when the diode voltages were 0.6 V and 0.7 V. Estimate the operating temperature of the diode junction. (17) Paper The parameters of a certain transistor are α = 0.99 and ICBO = 100 n A, while I = B 20 µ A. The transistor, connected in CE configuration, is in amplifying mode. Find I CEO, IC and I E. All symbols carry their usual meanings. Paper Sketch the output waveform for the circuit of figure. Also draw the variation of energy stored in the capacitor as a function of time. Mark appropriate values. Take the diode to be ideal ENGINEERS INSTITUTE OF INDIA. All Rights Reserved Page 14 of 19

15 3. SIGNALS & SYSTEM Papers-1992 to 2013 Paper Represent a half sinusoidal pulse g( t) = sin πt, 0 t 1 by an expression involving sine waves and step functions; and using this representation, write the Laplace transform of the given pulse. Paper Determine the value of k so that all the roots of the following polynomial are to the left of the line σ = F( ) 6 11 s = s + s + s + k Paper (a) The Fourier Transforms of the input and output of a linear time invariant system are e jπω 2 jπω and 2 (1 + jω) (1 ω + 2 jω) e respectively. What is its impulse response? (8) (b) Determine the Laplace transform of the periodic function shown in figure (8) 4. (a) The complex exponential Fourier series representation of a signal f(t) over the interval (O, T) is 3 jnπt f ( t) = e ( nπ) n = (i) Determine the numerical value of T. (ii) One of the components of f (t) is A cos 3 πt. what is the numerical value of A? (iii) Find the minimum number of terms which must be retained in the representation in order to include 99.9% of the energy of f(t) in the interval. (Assume signal energy as over the period). (17) (b) A discrete system has the unit pulse response: h(n T) = {3, 2, 1, 0, 0, 0, 0, } (17) Determine its response for the input: x(n T) = {1, 1, 2, 2, 1, 1, 0, 0, 0, 0,..} 2013 ENGINEERS INSTITUTE OF INDIA. All Rights Reserved Page 15 of 19

16 Paper A train of rectangular pulses, making excursions from zero to one volt, have a duration of 2 µ s and are separated by intervals of 10 µ s. Assume that the center of one pulse is located at t = 0 and obtain the trigonometric, Fourier series for this pulse train. (8) (3s + 4) ( s + 5) 6. If F(s) = find f (0), f (0), f (0). 2 ( s + 1) ( s + 6) 7. (Note: F(s) is the Laplace transform of f (t)). (17) Paper 2000 (a) Define the z-transform. (5) (b) Discuss the method of obtaining inverse z-transform of the form r(kt). (20) (c) Given the z-transformed function: αt (1 e ) R( z) = αt ( z 1) ( z e ) Determine the inverse. (15) Paper (a) With mathematical expressions, define the properties stability and casuality of a system. (10) (b) Obtain the difference equation to represent the discrete time system of the figure given below: (15) (c) For the above direct form I implementation of a Linear Time Invariant [LTI] system, derive the direct form II implementation. Show the block diagram and point out the improvement. (15) 2013 ENGINEERS INSTITUTE OF INDIA. All Rights Reserved Page 16 of 19

17 1. 4. NETWORK THEORY Papers-1992 to 2013 Paper 1992 (a) Calculate the steady state current in the 2 Ω -resistor shown in the figure below. The internal resistance of the battery is negligible and the value of capacitor C is 0.2 µ F. (8) (c) An a-c supply of 230 V is applied to a half-wave rectifier circuit through a transformer having primary to secondary turns ratio 10 : 1. Find: (i) the d-c output voltage and (ii) the peak inverse voltage. Assume the diode to be ideal. (8) 2. In the circuit shown in the figure below, the capacitor and inductor do not have initial stored energy. On closing the switch at t = 0, it is found that i(0 + ) = 15 ma and that V ab ( t ) = 0 for all t 0. Evaluate R and L. (17) 3. A 1µ F capacitor and a 2 µ F -capacitor are connected in series across a 1200 V supply line. Find the charge on each capacitor and voltage across each. The charged capacitors are subsequently disconnected from the line and from each other and reconnected with terminals of like sign together. Find the final charge on each and voltage across each. (17) 4. (a) The frequency pattern for an impedance Z LC (s) is shown in the figure below. Where O and 1 X represent zero and pole respectively. If lim Z LC ( s) =. Determine Z LC ( s) and realize its first s s Foster form. (17) 2013 ENGINEERS INSTITUTE OF INDIA. All Rights Reserved Page 17 of 19

18 + (b) In the figure below, switch S is open and at t = 0, the value of capacitor voltage + Vb V c (0 ) =. When the capacitor charges to a level of 2 V b. The switch closes. Which isolates 3 3 the voltage V b from the capacitor. When the capacitor discharges back to a level of V b / 3. The switch opens again. Determine the two timing intervals in a cycle. (17) Paper (a) If each of the resistances in the network shown in Fig. 1 (a) is R, what is the resistance between the terminals A and B? (8) (a) Assuming the internal resistance of the voltage source to be negligible calculate the current in branch XY of the circuit show ENGINEERS INSTITUTE OF INDIA. All Rights Reserved Page 18 of 19

Physical electronics, various electronics devices, ICs form the core of Electronics and Telecommunication branch. This part includes

Physical electronics, various electronics devices, ICs form the core of Electronics and Telecommunication branch. This part includes Paper-1 Syllabus for Electronics & Telecommunication Engineering: This part is for both objective and conventional type papers: 1) Materials and Components Materials and Components are the vertebral column