Application Note. E2 Interface for EE03, EE07 and EE08
|
|
|
- Colleen Brooks
- 6 years ago
- Views:
Transcription
1 APPLICATION NOTE AN Application Note E2 Interface for EE03, EE07 and EE08 Rev /2016 Relevant for: This application note applies to EE03, EE07 and EE08 Introduction: The E2 interface is used for the digital, bidirectional data transmission between a Master and a Slave device. The data transmission takes place via synchronous and serial modes, the Master being responsible for generating the clock signal. The Slave cannot send any data independently. For details, please refer to the document Specification E2 Interface. Rev /2016
2 CONTENT 1 Measured parameters Maximum E2-Interface clock frequency EE EE EE Measurement Timing EE EE EE Examples: Additional information to EE Contact information... 7 Rev /2016 1
3 1 Measured parameters Following parameters and values [hex] can be read via E2 interface: command return-value parameter format measuring range Output resolution Group Sub-Group Available measured values Statusbyte: 1) EE03: 0x03 EE07: 0x07 EE08: 0x08 EE03: 0x09 EE07: 0x09 EE07-02: 0x29 EE08: 0x00 EE03: 0x03 EE07: 0x02 or 0x03 EE07-02: 0x02 or 0x03 EE08: 0x03 or 0x21 0x0x Measured value 1: Humidity unsigned integer 0-100%rH 1/100%rH Measured value 2: Temperature unsigned integer K 1/100 K Measured value 3: Not defined Measured value 4: Not defined 1) For EE03: Indicates broken (but not short circuit) sensor 2 Maximum E2-Interface clock frequency The maximum clock frequency depends on the pull-up resistor and the capacity of the connection cable. The pull-up resistor shall be between 10 kohm and 100 kohm. 2.1 EE03 Rev /2016 2
4 2.2 EE EE08 Rev /2016 3
5 3 Measurement Timing 3.1 EE03 minimum typical maximum t pwrup 350 ms 600 ms t meas 250 ms 450 ms t V & +25 V & -40 V & +25 V & +85 V & +25 C 3.4 sec 2.1 sec 3.0 sec 3.8 sec 2.5 sec (t pwrup = power up time ; t meas = measuring time ; t cfree = internal measuring interval) 3.2 EE07 minimum typical maximum t pwrup 270 ms 300 ms t meas 260 ms 300 ms t cfree 1.0 sec (t pwrup = power up time t meas = measuring time t cfree = internal measuring interval) 3.3 EE08 minimum typical maximum t 1) pwrup 300 ms 500 ms t 1) pwrup analog 1 s 2 s t meas 150 ms t cfree 2.0 sec (t pwrup = power up time t meas = measuring time t cfree = internal measuring interval) 1.) Max. 20ms from switching on to +UB stable (90% from final Value) Rev /2016 4
6 3.4 Examples: tc = time cycle (Query interval if the measurement get started with the query of the status byte) Rev /2016 5
7 4 Additional information to EE07-02 The EE07-02 is an EE07 version optimized for very low power consumption. It is ideal for batterypowered devices. The diagram shows the EE07-02 max. permissible E2-bus voltage VE2 as function of the supply voltage VDD. Rev /2016 6
8 Contact information E+E ELEKTRONIK GES.M.B.H. Langwiesen Engerwitzdorf Austria Tel.: +43 (7235) Fax: +43 (7235) info@epluse.com Homepage: The information in this document is believed to be accurate in all respects at the time of publication but is subject to change without notice. E+E Elektronik assumes no responsibility for errors and omissions, and shall not accept responsibility for any consequences resulting from the use of information included herein. Additionally, E+E Elektronik assumes no responsibility for the functioning of features or parameters not described. E+E Elektronik reserves the right to make changes without further notice. E+E Elektronik makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does E+E Elektronik assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including consequential or incidental damages without limitation. E+E Elektronik products are not designed, intended, or authorised for use in applications intended to support or sustain life, or for any other application in which the failure of the E+E Elektronik product could create a situation where personal injury or death may occur. Should the buyer purchase or use E+E Elektronik products for any such unintended or unauthorised application, the buyer shall indemnify and hold E+E Elektronik harmless against all claims and damages. Rev /2016 7
Si86xxISO-EVB UG. Si86XXISO EVALUATION BOARD USER S GUIDE. 1. Introduction
Si6XXISO EVALUATION BOARD USER S GUIDE. Introduction The Si6xxISO evaluation board allows designers to evaluate Silicon Lab's family of CMOS ultra-low-power isolators. These isolators are CMOS devices
1 Block HV2 LDMOS Device Number of fingers: 56, Periphery: 5.04 mm Frequency: 1 GHz, V DS. =26 v & I DS
Number of fingers: 56, Periphery: 5.4 mm =2. ma/mm 5 ohm Termination Output Power at Fundamental vs. 4 11 Transducer Gain vs. Output Power at Fundamental 3 1-1 Transducer Gain 1 9 7 6 - -3 - -1 1 3 4 5-3
Description. Benefits CONTROL LOGIC. Rev 1.2, December 21, 2010 Page 1 of 12
3-Channel Clock Distribution Buffer Key Features Low current consumption: - 2.7mA-typ (VDD=1.8V, CL=0) 1.70V to 3.65V power supply operation MHz to 52MHz CLKIN range Supports LVCMOS or Sine Inputs Supports
(408) CLASS 2 TRANSFORMER INPUT: AC 12OV
T74C232 Paging System Transmitter U S E R M A N UA L Transmit Receive Power 9VAC T74C232 FCC ID: M74T7400 800.437.4996 www.pager.net RS-232 Installation, Warranty and Service Information Long Range Systems
Analog Power AM3904N. Dual N-Channel Logic Level MOSFET
Dual N-Channel Logic Level MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for use
PCS3P73U00/D. USB 2.0 Peak EMI reduction IC. General Features. Application. Product Description. Block Diagram
USB 2.0 Peak EMI reduction IC General Features 1x Peak EMI Reduction IC Input frequency: 10MHz - 60MHz @ 2.5V 10MHz - 70MHz @ 3.3V Output frequency: 10MHz - 60MHz @ 2.5V 10MHz - 70MHz @ 3.3V Supply Voltage:
PCS2P2309/D. 3.3V 1:9 Clock Buffer. Functional Description. Features. Block Diagram
3.3V 1:9 Clock Buffer Features One-Input to Nine-Output Buffer/Driver Buffers all frequencies from DC to 133.33MHz Low power consumption for mobile applications Less than 32mA at 66.6MHz with unloaded
AND8285/D. NCP1521B Adjustable Output Voltage Step Down Converter Simulation Procedure SIMULATION NOTE
NCP1521B Adjustable Output Voltage Step Down Converter Simulation Procedure Prepared by: Bertrand Renaud On Semiconductor SIMULATION NOTE Overview The NCP1521B step down PWM DC DC converter is optimized
MiniSense 100 Analog PCB
Evaluation Circuit for Vibration Sensor Low Power Battery Powered LED for Trigger High Sensitivity Analog and Digital Signal Access Points The LDTC MiniSense 100 Analog PCB provides a simple way to evaluate
Description YT0 YC0 YT1 YC1 YT2 YC2 YT3 YC3 YT4 YC4 YT5 YC5 YT6 YC6 YT7 YC7 YT8 YC8 YT9 YC9 FBOUTT FBOUTC
Differential Clock Buffer/Driver Features Phase-locked loop clock distribution for Double Data Rate Synchronous DRAM applications 1:10 differential outputs External Feedback pins (, FBINC) are used to
P3P85R01A. 3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device
3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device Functional Description P3P85R0A is a versatile, 3.3 V, LVCMOS, wide frequency range, TIMING SAFE Peak EMI reduction device. TIMING SAFE
N-Channel Logic Level MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters
P1P Portable Gaming Audio/Video Multimedia. MARKING DIAGRAM. Features
.8V, 4-PLL Low Power Clock Generator with Spread Spectrum Functional Description The PP4067 is a high precision frequency synthesizer designed to operate with a 27 MHz fundamental mode crystal. Device
Si8920ISO-EVB. Si8920ISO-EVB USER S GUIDE. Description. Si8920ISO-EVB Overview. Kit Contents
Si8920ISO-EVB USER S GUIDE Description Si8920ISO-EVB Overview This document describes the operation of the Si8920ISO-EVB. Kit Contents The Si8920ISO Evaluation Kit contains the following items: Si8920ISO-EVB.
DEMONSTRATION NOTE. Figure 1. CS51411/3 Demonstration Board. 1 Publication Order Number: CS51411DEMO/D
DEMONSTRATION NOTE Description The CS51411 demonstration board is a 1.0 A/3.3 V buck regulator running at 260 khz (CS51411) or 520 khz (CS51413). The switching frequency can be synchronized to a higher
PCS2I2309NZ. 3.3 V 1:9 Clock Buffer
. V 1:9 Clock Buffer Functional Description PCS2I209NZ is a low cost high speed buffer designed to accept one clock input and distribute up to nine clocks in mobile PC systems and desktop PC systems. The
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
Preferred Devices PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias
LOW POWER SCHOTTKY. GUARANTEED OPERATING RANGES ORDERING INFORMATION
The SN74LS298 is a Quad 2-Port Register. It is the logical equivalent of a quad 2-input multiplexer followed by a quad 4-bit edge-triggered register. A Common Select input selects between two 4-bit input
Si4825-DEMO. Si4825 DEMO BOARD USER S GUIDE. 1. Features. Table 1. Si4825 Band Sequence Definition
Si4825 DEMO BOARD USER S GUIDE 1. Features ATAD (analog tune and analog display) AM/FM/SW radio Worldwide FM band support 64 109 MHz with 18 bands, see the Table 1 Worldwide AM band support 504 1750 khz
AM4835P. Analog Power P-Channel 30-V (D-S) MOSFET THERMAL RESISTANCE RATINGS. Symbol Maximum Units
P-Channel 3-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for use in power
MVH3200D Series High Performance Digital Relative Humidity & Temperature Sensor General Description
Datasheet Rev. 3.3 MVH3200D Series High Performance Digital Relative Humidity & Temperature Sensor General Description [Patents protected & patents pending] MEMS Vision s relative humidity (RH) and temperature
MARKING DIAGRAMS Figure 1. Logic Diagram ORDERING INFORMATION Figure 2. Dip Pin Assignment CDIP 16 L SUFFIX CASE 620A
The MC0H6 is a functional/pinout duplication of the MC06, with 00% improvement in propagation delay and no increase in power supply current. Propagation Delay,.0 ns Typical Power Dissipation 85 mw Typ/Pkg
AND8450/D. NCV7680 LED Driver Linear Regulator Performance APPLICATION NOTE
NCV7680 LED Driver Linear Regulator Performance APPLICATION NOTE Introduction The NCV7680 is an automotive LED driver targeted primarily for rear combination lamp systems. A high input voltage to this
P2I2305NZ. 3.3V 1:5 Clock Buffer
3.3V :5 Clock Buffer Functional Description P2I2305NZ is a low cost high speed buffer designed to accept one clock input and distribute up to five clocks in mobile PC systems and desktop PC systems. The
YT0 YT1 YC1 YT2 YC2 YT3 YC3 FBOUTT FBOUTC
Differential Clock Buffer/Driver Features Phase-locked loop (PLL) clock distribution for Double Data Rate Synchronous DRAM applications 1:5 differential outputs External feedback pins (, ) are used to
Single stage LNA for GPS Using the MCH4009 Application Note
Single stage LNA for GPS Using the MCH49 Application Note http://onsemi.com Overview This application note explains about ON Semiconductor s MCH49 which is used as a Low Noise Amplifier (LNA) for GPS (Global
NPN MPS650 PNP MPS750 MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) OFF CHARACTERISTICS
MAXIMUM RATINGS Rating Symbol MPS650 MPS750 MPS651 MPS751 Collector Emitter Voltage VCE 40 60 Vdc Collector Base Voltage VCB 60 80 Vdc Emitter Base Voltage VEB 5.0 Vdc Collector Current Continuous IC 2.0
VIM Series. 90 & 60 W, Efficient, CV Class 2 LED Drivers ORDERING INFORMATION
060W-12 100W-24 Nominal Input Voltage 90 &, Efficient, CV Class 2 Max. Output Power Nominal Output Voltage Max. Output Current 120 & 277 Vac 12, 24 Vdc 5, 3.75 A Efficiency up to 90% typical Max. Case
PCS3P73U00/D. USB 2.0 Peak EMI reduction IC. General Features. Applications. Product Description. Block Diagram
USB 2.0 Peak EMI reduction IC General Features 1x Peak EMI Reduction IC Input frequency: 10MHz - 60MHz @ 2.5V 10MHz - 70MHz @ 3.3V Output frequency: 10MHz - 60MHz @ 2.5V 10MHz - 70MHz @ 3.3V Supply Voltage:
AND8388/D. Input Dynamic Range Extension of the BelaSigna 300 Series
Input Dynamic Range Extension of the BelaSigna 300 Series INTRODUCTION This application note describes the functioning of the BelaSigna 300 input dynamic range extension (IDRX) feature. The goal of this
N-Channel 700-V (D-S) MOSFET
AMN7P N-Channel 7-V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed PRODUCT SUMMARY r DS(on) (Ω) ID (A) 7 @ V GS = V a VDS (V) Typical Applications:
AN294. Si825X FREQUENCY COMPENSATION SIMULATOR FOR D IGITAL BUCK CONVERTERS
Si825X FREQUENCY COMPENSATION SIMULATOR FOR D IGITAL BUCK CONVERTERS Relevant Devices This application note applies to the Si8250/1/2 Digital Power Controller and Silicon Laboratories Single-phase POL
434MHz LNA for RKE Using the 2SC5245A Application Note
434MHz LNA for RKE Using the 2SC5245A Application Note http://onsemi.com Overview This application note explains about ON Semiconductor s 2SC5245A which is used as a Low Noise Amplifier (LNA) for RKE (Remote
AN361 WIRELESS MBUS IMPLEMENTATION USING EZRADIOPRO DEVICES. 1. Introduction. 2. Wireless MBUS Standard
WIRELESS MBUS IMPLEMENTATION USING EZRADIOPRO DEVICES 1. Introduction This application note describes how to create a wireless MBUS compliant device using Silicon Labs' Si443x EZRadioPRO RF transceiver
RoHS compliant, Pb-free Industrial temperature range: 40 to +85 C Footprint-compatible with CDCLVC , 2.5, or 3.3 V operation 16-TSSOP
1:8 LOW JITTER CMOS CLOCK BUFFER (
P2042A LCD Panel EMI Reduction IC
LCD Panel EMI Reduction IC Features FCC approved method of EMI attenuation Provides up to 15dB of EMI suppression Generates a low EMI spread spectrum clock of the input frequency Input frequency range:
NCP800. Lithium Battery Protection Circuit for One Cell Battery Packs
Lithium Battery Protection Circuit for One Cell Battery Packs The NCP800 resides in a lithium battery pack where the battery cell continuously powers it. In order to maintain cell operation within specified
AN797 WDS USER S GUIDE FOR EZRADIO DEVICES. 1. Introduction. 2. EZRadio Device Applications Radio Configuration Application
WDS USER S GUIDE FOR EZRADIO DEVICES 1. Introduction Wireless Development Suite (WDS) is a software utility used to configure and test the Silicon Labs line of ISM band RFICs. This document only describes
NLAS7222B, NLAS7222C. High-Speed USB 2.0 (480 Mbps) DPDT Switches
High-Speed USB 2.0 (480 Mbps) DPDT Switches ON Semiconductor s NLAS7222B and NLAS7222C are part of a series of analog switch circuits that are produced using the company s advanced sub micron CMOS technology,
The MC10109 is a dual 4 5 input OR/NOR gate. P D = 30 mw typ/gate (No Load) t pd = 2.0 ns typ t r, t f = 2.0 ns typ (20% 80%)
The MC10109 is a dual 5 input OR/NOR gate. P D = 0 mw typ/gate (No Load) t pd =.0 ns typ t r, t f =.0 ns typ (0% 0%) LOGIC DIAGRAM MARKING DIAGRAMS CDIP 16 L SUFFIX CASE 60 PDIP 16 P SUFFIX CASE 6 PLCC
N-Channel 100-V (D-S) MOSFET
AM744NA N-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) PRODUCT SUMMARY r DS(on) (mω) 5 @ V GS = V 7 @ V GS = 4.5V ID (A) 5 4 Typical
ISOlinear Architecture. Silicon Labs CMOS Isolator. Figure 1. ISOlinear Design Architecture. Table 1. Circuit Performance mv 0.
ISOLATING ANALOG SIGNALS USING THE Si86XX CMOS ISOLATOR FAMILY. Introduction AN559 The ISOlinear reference design (Si86ISOLIN-KIT) provides galvanic isolation for analog signals over a frequency range
EVALUATION BOARD FOR STK N, 120N, 140N. Phenol 1-layer Board) Figure 2. STK NGEVB Figure 3. STK NGEVB Figure 4.
STK44-NGEVB, STK44-1NGEVB, STK44-14NGEVB STK44-N Series Evaluation Board User's Manual EVAL BOARD USER S MANUAL Thick-Film Hybrid IC for use used in from 6 W to 18 W 1ch class AB audio power amplifiers.
SL28SRC01. PCI Express Gen 2 & Gen 3 Clock Generator. Features. Pin Configuration. Block Diagram
PCI Express Gen 2 & Gen 3 Clock Generator Features Low power PCI Express Gen 2 & Gen 3clock generator One100-MHz differential SRC clocks Low power push-pull output buffers (no 50ohm to ground needed) Integrated
Storage Telecom Industrial Servers Backplane clock distribution
1:8 LOW JITTER CMOS CLOCK BUFFER WITH 2:1 INPUT MUX (
Low Capacitance Transient Voltage Suppressors / ESD Protectors CM QG/D. Features
Low Capacitance Transient Voltage Suppressors / ESD Protectors CM1250-04QG Features Low I/O capacitance at 5pF at 0V In-system ESD protection to ±8kV contact discharge, per the IEC 61000-4-2 international
TIMING CIRCUIT SEMICONDUCTOR TECHNICAL DATA ORDERING INFORMATION. Figure Second Solid State Time Delay Relay Circuit
The MC1455 monolithic timing circuit is a highly stable controller capable of producing accurate time delays or oscillation. Additional terminals are provided for triggering or resetting if desired. In
N Channel Depletion MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS ON CHARACTERISTICS
N Channel Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc Drain Gate Voltage VDG 25 Vdc Gate Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 madc Total Device Dissipation
P-Channel 20-V (D-S) MOSFET
AM3PE P-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) - PRODUCT SUMMARY r DS(on) (mω) 8 @ V GS = -.5V @ V GS = -.5V ID (A) -5.6
DUAL TIMING CIRCUIT SEMICONDUCTOR TECHNICAL DATA PIN CONNECTIONS ORDERING INFORMATION. Figure Second Solid State Time Delay Relay Circuit
The MC3456 dual timing circuit is a highly stable controller capable of producing accurate time delays, or oscillation. Additional terminals are provided for triggering or resetting if desired. In the
10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 125 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS TIP141 TIP142
... designed for general purpose amplifier and low frequency switching applications. High DC Current Gain Min h FE = 1000 @ I C = 5 A, V CE = 4 V Collector Emitter Sustaining Voltage @ 30 ma V CEO(sus)
P-Channel 60-V (D-S) MOSFET
AMP6-6B P-Channel 6-V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) -6 PRODUCT SUMMARY r DS(on) (mω) 6 @ V GS = -V 7 @ V GS = -4.5V ID(A)
ASM3P2669/D. Peak EMI Reducing Solution. Features. Product Description. Application. Block Diagram
Peak EMI Reducing Solution Features Generates a X low EMI spread spectrum clock of the input frequency. Integrated loop filter components. Operates with a 3.3V / 2.5V supply. Operating current less than
Description. Benefits. Low Jitter PLL With Modulation Control. Input Decoder SSEL0 SSEL1. Figure 1. Block Diagram. Rev 2.6, August 1, 2010 Page 1 of 8
Low Jitter and Power Clock Generator with SSCG Key Features Low power dissipation - 13.5mA-typ CL=15pF - 18.0mA-max CL=15pF 3.3V +/-10% power supply range 27.000MHz crystal or clock input 27.000MHz REFCLK
SEAMS DUE TO MULTIPLE OUTPUT CCDS
Seam Correction for Sensors with Multiple Outputs Introduction Image sensor manufacturers are continually working to meet their customers demands for ever-higher frame rates in their cameras. To meet this
1. DEFINE THE SPECIFICATION 2. SELECT A TOPOLOGY
How to Choose for Design This article is to present a way to choose a switching controller for design in the s Selector Guide SGD514/D from ON Semiconductor. (http://www.onsemi.com/pub/collateral/sgd514d.pdf)
TSYS02D Digital Temperature Sensor
High Accuracy Temperature Sensor 16 bit Resolution High Speed, low Response Time Low Power Consumption I 2 C Interface Small TDFN8 Package DESCRIPTION The TSYS02D is a single chip, temperature sensor.
N-Channel 30-V (D-S) MOSFET
AM734N N-Channel 3-V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) 3 PRODUCT SUMMARY r DS(on) (mω) @ V GS = V 3 @ V GS = 4.5V ID(A) 6 4 Typical
DTH-14. High Accuracy Digital Temperature / Humidity Sensor. Summary. Applications. Data Sheet: DTH-14
DTH-14 High Accuracy Digital Temperature / Humidity Sensor Data Sheet: DTH-14 Rev 1. December 29, 2009 Temperature & humidity sensor Dewpoint Digital output Excellent long term stability 2-wire interface
TSYS01 Digital Temperature Sensor
High Accuracy Temperature Sensor 16/24 bit Resolution Low Power SPI/I 2 C Interface QFN16 Package DESCRIPTION The TSYS01 is a single chip, versatile, new technology temperature sensor. The TSYS01 provides
MARKING DIAGRAMS LOGIC DIAGRAM ORDERING INFORMATION DIP PIN ASSIGNMENT CDIP 16 L SUFFIX CASE 620 MC10216L AWLYYWW
The MC1016 is a high speed triple differential amplifier designed for use in sensing differential signals over long lines. The base bias supply (V BB ) is made available at pin 11 to make the device useful
ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9236MN. Freescale Semiconductor. Technical Data
Technical Data Cellular Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding
AM9435P. Analog Power P-Channel 30-V (D-S) MOSFET. PRODUCT SUMMARY V DS (V) r DS(on) m(ω) I D (A) V GS = -10V V GS = -4.5V -5.
P-Channel 3-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for use in power
ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9838. Freescale Semiconductor. Technical Data MHL9838. Rev.
Technical Data Rev. 4, 1/2005 Replaced by N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. Cellular
ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9318. Freescale Semiconductor. Technical Data MHL9318. Rev.
Technical Data Rev. 3, 1/2005 Replaced by N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. Cellular
SEMICONDUCTOR APPLICATION NOTE
SEMICONDUCTOR APPLICATION NOTE Order this document by AN/D Prepared by: Bill Lucas and Warren Schultz A plugin module that is part of a systems development tool set for pressure sensors is presented here.
PCS3P8103A General Purpose Peak EMI Reduction IC
General Purpose Peak EMI Reduction IC Features Generates a 4x low EMI spread spectrum clock Input Frequency: 16.667MHz Output Frequency: 66.66MHz Tri-level frequency Deviation Selection: Down Spread, Center
LC79430KNE. Overview. Features. CMOS LSI Dot-Matrix LCD Drivers
Ordering number : ENA2123 COS LSI Dot-atrix LCD Drivers http://onsemi.com Overview The is a large-scale dot matrix LCD common driver LSI. The contains an 80-bit bidirectional shift register and is equipped
ASM1232LP/LPS 5V μp Power Supply Monitor and Reset Circuit
5V μp Power Supply Monitor and Reset Circuit General Description The ASM1232LP/LPS is a fully integrated microprocessor Supervisor. It can halt and restart a hung-up microprocessor, restart a microprocessor
BAV103 High Voltage, General Purpose Diode
BAV3 High Voltage, General Purpose Diode Cathode Band SOD80 Description A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless
CAT5136, CAT5137, CAT5138. Digital Potentiometers (POTs) with 128 Taps and I 2 C Interface
CAT5136, CAT5137, CAT5138 Digital Potentiometers (POTs) with 128 Taps and I 2 C Interface Description CAT5136, CAT5137, and CAT5138 are a family of digital POTs operating like mechanical potentiometers
AND9518/D DAB L-band Amplifier using the NSVF4020SG4
DAB L-band Amplifier using the NSVF4020SG4 Overview This application note explains about ON Semiconductor s NSVF4020SG4 which is used as a Low Noise Amplifier (LNA) for DAB (Digital Audio Broadcast). The
CAX803, CAX809, CAX Pin Microprocessor Power Supply Supervisors
3-Pin Microprocessor Power Supply Supervisors Description The CAX83, CAX89, and CAX81 are supervisory circuits that monitor power supplies in digital systems. The CAX83, CAX89, and CAX81 are direct replacements
EVERSPIN s New 2mm Exposed Pad DFN Package Meets Both SOIC-8 and DFN8 PCB Layouts
EVERSPIN s New 2mm Exposed Pad DFN Package Meets Both SOIC-8 and DFN8 PCB Layouts This Application Note is to inform Everspin customers that a new, DFN8 package with a 2mm bottom exposed pad has been added
VGM Series. 100 & 60 W, Efficient, CV Class 2 LED Drivers for Signage Applications ORDERING INFORMATION
Nominal Input Voltage Max. Output Power Nominal Output Voltage Max. Output Current 120/277 Vac 12, 24, Vdc 5, 3.92 A Efficiency up to 90% typical Max. Case Temperature 100 C (measured at the hot spot)
APTHPA xx50
Absolute Maximum Ratings PARAMETER UNIT RATING Input RF Power dbm 0 Supply Voltage V 35 Load Mismatch Value - 3 : 1 @all load phase * Input Signal Condition : CW 1-Tone Environmental Characteristics PARAMETER
PFC Device Corporation
PFC Device Corporation F I B 20A 120V HPTR Single Schottky Rectifier Major ratings and characteristics Values Units I F(AV) Rectangular Waveform 20 A V RRM 120 V V F @ 20A, Tj=125 o C 0.73 V, typ. T J
SBT700-06RH. Schottky Barrier Diode 60V, 70A, VF; 0.66V Dual To-3PF-3L Cathode Common
Ordering number : ENA16A SBT-6RH Schottky Barrier Diode 6V, A, VF;.66V Dual To-PF-L Cathode Common http://onsemi.com Applications High frequency rectification (switching regulators, converters, choppers)
AM6930N. Analog Power Dual N-Channel 30-V (D-S) MOSFET THERMAL RESISTANCE RATINGS. Symbol Maximum Units
Dual N-Channel 3-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for use in
Features. Packages. Applications
8.4-9.1 GHz General Description The MMVC88 is designed in a highly reliable InGaP-GaAs Hetero-Junction Bipolar Transistor (HBT) process with active device, integrated resonator, tuning diode and isolating
Designed for FM radio transposers and transmitters, this amplifier incorporates MOSFET transistors to enhance ruggedness and reliability.
Designed for FM radio transposers and transmitters, this amplifier incorporates MOSFET transistors to enhance ruggedness and reliability. General characteristics: 87.5-108.0 MHz. 48 Volts. Internal Bias.
2N5194 2N for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192
... for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192 ÎÎ *MAXIMUM RATINGS ÎÎ Rating ÎÎ Symbol Î 2N5194 Î Unit ÎÎ Collector Emitter Voltage
PIN CONNECTIONS ORDERING INFORMATION FUNCTIONAL TABLE
The MC12026 is a high frequency, low voltage dual modulus prescaler used in phase locked loop (PLL) applications. The MC12026A can be used with CMOS synthesizers requiring positive edges to trigger internal
NGTB15N60EG. IGBT - Short-Circuit Rated. 15 A, 600 V V CEsat = 1.7 V
NGTB5N6EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective NonPunch Through (NPT) Trench construction, and provides superior performance in
NSQA6V8AW5T2 Series Transient Voltage Suppressor
Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection.
PIN CONNECTIONS
The NCP4421/4422 are high current buffer/drivers capable of driving large MOSFETs and IGBTs. They are essentially immune to any form of upset except direct overvoltage or over dissipation they cannot be
Built-in low voltage reset and thermal shutdown circuit Output ON resistance (Upper and lower total 0.27Ω; Ts=25 C, IO=1.0A)
Ordering number : 1996 Bi-CMOS IC Forward/Reverse Motor Driver http://onsemi.com Overview The is a 1-channel H bridge motor driver IC. The package size is extremely small with wafer level package (WLP).
MARKING DIAGRAMS LOGIC DIAGRAM ORDERING INFORMATION DIP PIN ASSIGNMENT CDIP 16 L SUFFIX CASE 620 MC10124L AWLYYWW
The MC024 is a quad translator for interfacing data and control signals between a saturated logic section and the MECL section of digital systems. The MC024 has TTL compatible inputs, and MECL complementary
ARCHIVE INFORMATION. PCS Band RF Linear LDMOS Amplifier MHL Freescale Semiconductor. Technical Data MHL Rev. 4, 1/2005
Technical Data Rev. 4, 1/25 Replaced by N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. PCS Band
P10V45SP. PFC Device Corporation. 10A 45V MOS Schottky Rectifier TO-277 P10V45SP. Major ratings and characteristics. Features. Typical Applications
PFC Device Corporation 0A 45V MOS Schottky Rectifier Major ratings and characteristics Characteristics Values Units TO-77 I F(AV) Rectangular Waveform 0 A V RRM 45 V V F @ 0A, Tj=5 o C 0.39 V, typ. T J
Model-Based Design Toolbox
Model-Based Design Toolbox License Installation & Management Manual An Embedded Target for S32K1xx Family of Processors Version 3.0.0 Target Based Automatic Code Generation Tools For MATLAB /Simulink /Stateflow
TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor
TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor Features Medium Power Linear Switching Applications Complementary to TIP125 / TIP126 / TIP127 Ordering Information 1 TO-220 1.Base 2.Collector
Is Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
AM3932N. Analog Power N-Channel 30-V (D-S) MOSFET. PRODUCT SUMMARY V DS (V) r DS(on) m(ω) I D (A) V GS = 4.5V V GS = 2.5V 3.
N-Channel 3-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications
FFSP1065A/D. Silicon Carbide Schottky Diode 650 V, 10 A Features. FFSP1065A Silicon Carbide Schottky Diode. Description.
FFSP65A Silicon Carbide Schottky Diode 65 V, A Features Max Junction Temperature 75 o C Avalanche Rated 6 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse
NSVJ3910SB3 N-Channel JFET 25V, 20 to 40mA, 40mS
NSVJ910SB N-Channel JFET 25V, 20 to 40mA, 40mS Automotive JFET designed for compact and efficient designs and including high gain performance. AEC-Q101 qualified JFET and PPAP capable suitable for automotive
AM2306N. Analog Power N-Channel 30-V (D-S) MOSFET. PRODUCT SUMMARY V DS (V) r DS(on) m(ω) I D (A) V GS = 10V V GS = 4.5V 3.
N-Channel 3-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for use in power
4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 15 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Figure 1. Power Derating BD787
... designed for lower power audio amplifier and low current, high speed switching applications. Low Collector Emitter Sustaining Voltage VCEO(sus) 60 Vdc (Min) BD787, BD788 High Current Gain Bandwidth
LB1939T 2 Channel H Bridge Constant Voltage/Constant Current Driver
2 Channel H Bridge Constant Voltage/Constant Current Driver Overview The is a two-phase excitation bipolar stepping motor driver that features low voltage operation, a low saturation voltage, and low power
BTA16-600CW3G, BTA16-800CW3G. Triacs Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 600 thru 800 VOLTS
BTA6-600CW3G, BTA6-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance fullwave ac control applications where high noise immunity and high commutating di/dt are required. Features