FS2...N Electrical Characteristics at Tamb = 25 C SYMBOL I GT GT GD I DRM / I RRM PRMETER Gate Trigger Current Gate Trigger oltage Gate Non Trigger ol

Size: px
Start display at page:

Download "FS2...N Electrical Characteristics at Tamb = 25 C SYMBOL I GT GT GD I DRM / I RRM PRMETER Gate Trigger Current Gate Trigger oltage Gate Non Trigger ol"

Transcription

1 FS2...N TO26 (SOT223) K () (2) G (3) OnState Current Gate Trigger Current.25 mp < 2 µ OffState oltage 4 8 FETURES Glass/passivated die junctions Low current SCR Low thermal resistance High surge current capability Low forward voltage drop Solder dip 26ºC, s Component in accordance to RoHS 2/65/EU and WEEE 22/96/EC Meets MSL level 3, per JSTD2, LF maximum peak of 26º C MECHNICL DT Case: TO26 (SOT223). Epoxy meets UL 94 flammability rating. Polarity: s marked on the body. Terminals: Matte tin plated leads, solderable per MILSTD75 Method 226, JSTD2 and JESD22B2. Consumer grade, meets JESD 2 class whisker test. TYPICL PPLICTIONS Thanks to highly sensitive triggering levels, the FS2xxxN SCR series is suitable for all applications where available gate current is limited, such as ground fault circuit interruptors, pilot circuits in solid state relays, standby mode power supplies, smoke and alarm detectors. Maximun Ratings and Electrical Characteristics at 25 C SYMBOL PRMETER CONDITIONS alue Unit I T(RMS) Onstate Current 8 Conduction ngle, T c = 5 C.25 I T() verage Onstate Current Half Cycle, Q = 8 º, T c = 5 C.8 I TSM Nonrepetitive OnState Current Half Cycle, 6 Hz 25 I TSM I 2 t I GM Nonrepetitive OnState Current Fusing Current Peak Gate Current Halfl Cycle, 5 Hz tp = ms, Half Cycle 2 µs max s P GM Peak Gate Dissipation 2 µs max. 3 W P G() T j T stg Gate Dissipation 2ms max..2 W Operating Temperature (4 to +25) C Storage Temperature (4 to +5) C T sld Soldering Temperature s max. 26 C SYMBOL DRM / RRM PRMETER Repetitive Peak Off State oltage CONDITIONS R GK = kw D 4 OLTGE M 6 N 8 Unit Revision: ersion: May3 Page Number: /6

2 FS2...N Electrical Characteristics at Tamb = 25 C SYMBOL I GT GT GD I DRM / I RRM PRMETER Gate Trigger Current Gate Trigger oltage Gate Non Trigger oltage OffState Leakage Current CONDITIONS D = 2 DC, R L = 4W. T j = 25 ºC SENSITIITY R GM Reverse Gate oltage I R G = µ, 8 I H Holding Current I T = 5 m, R GK = kw T j = 25 ºC I L Latching Current I G = m, R GK = kw d / dt Critical Rate of oltage Rise D =.67 x DRM, R GK = kw, Tj = 25 ºC di / dt Critical Rate of Current Rise D = 2 DC, R L = 4W, T j = 25 ºC D = DRM, R L = 3.3kW, R GK = 22W T j = 25 ºC tr ns, f = 6 Hz, T j = 25 ºC TM Onstate oltage at I T = 2.5 mp, tp = 38 µs, T j = 25 ºC t Threshold oltage T j = 25 ºC.9 r d Dynamic resistance T j = 25 ºC 5 mw R th(jl) Thermal Resistance JunctionLeads for DC I G = 2 x I GT D = DRM, R GK = kw T j = 25 ºC R = RRM, T j = 25 ºC Unit µ m m /µs /µs µ µ ºC/W R th(ja) Thermal Resistance Junctionmb for DC S () = 5 cm 2 6 ºC/W () S: Cooper surface under tab. Part Number Information F S 2 2 D N RB FGOR SCR CURRENT PCKGING FORG CSE OLTGE SENSITIITY Revision: ersion: May3 Page Number: 2/6

3 FS2...N Ordering information PREFERRED P/N PCKGE CODE DELIERY MODE BSE QUNTITY UNIT WEIGHT (g) FS22DN RS FS22DN RB RS REEL,.6 RB REEL 2,5.6 Package Outline Dimensions: (mm) TO26 (SOT223) B H Test sort name 6 max. (4x) D F E MC XXXNWWY G I Marking code Year code Week code Format type.5.5 C Max. J K Mounting Pad Layout 3.3 (3x) REF. B C D E F G H I J K DIMENSIONS Milimeters Min. Nominal Max Revision: ersion: May3 Page Number: 3/6

4 Ratings and Characteristics (Ta 25 ºC unless otherwise noted) FS2...N Fig. : Maximum average power dissipation versus average onstate current Fig. 2: verage and D.C. onstate current versus case temperature P (W).5 I T() () DC a = 8 º.2 36 º Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration a T lead (ºC) Fig. 4: Relative variation of gate trigger current, holding and latching current versus junction temperature. [Zth(jc) / Rth (jc)] I GT, I H (Tj) / I GT, I H (Tj = 25 ºC) IH & IL I GT. tp (s) E3 E2 E E+ Fig. 5: Relative variation of holding current versus gatecathode resistance (typical values)..2. Tj (ºC) Fig. 6: Relative variation of d/dt immunity versus gatecathode resistance (typical values). 5 IH [RGK] / IH[RGK = kw] Tj=25 ºC. d/dt [RGK] / d/dt [RGK = 22W] Tj = 25 C D =.67xDRM RGK=(kW) E2 E E+ E RGK=(kW) Revision: ersion: May3 Page Number: 4/6

5 FS2...N Fig. 7: Relative variation of d/dt immunity versus gatecathode capacitance (typical values). Fig. 8: Non repetitive surge peak onstate current versus number of cycles. I TSM () 8 D =.67 x DRM Tj = 25 ºC RGK = 22W Tj initial = 25 ºC f = 5Hz Cgk(nF) Number of cycles Fig. 9: Non repetitive surge peak onstate current for a sinusoidal pulse with width: tp < ms, and corresponding value of I 2 t. Fig. : Onstate characteristics (maximum values) ITSM(). I 2 t ( 2 s) Tj initial = 25 ºC 5 ITM() Tj max T(O) =.85 rd = 9mW I TSM Tj =Tj max I 2 t Tj 25 ºC 2 5 tp(ms) TM() Revision: ersion: May3 Page Number: 5/6

6 FS2...N Revision History Date Revision Description of Changes 4Sep2 Original Data Sheet 27May23 2 and 7 eliminated Disclaimer ll product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. Fagor Electrónica, S.Coop., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Fagor"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Fagor makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Fagor disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Fagor's knowledge of typical requirements that are often placed on Fagor products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Fagor's terms and conditions of purchase, including but nos limited to the warranty expressed therein. Except as expressly indicated in writing. Fagor products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Fagor product could result in personal injury or death. Customers using or selling Fagor products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Fagor and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attomeys fees, even if such claim alleges that Fagor or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Fagor personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Fagor, Product names and markings noted herein may be trademarks of their respective owners. Revision: ersion: May3 Page Number: 6/6

Maximun Ratings and Electrical Characteristics at 25 C

Maximun Ratings and Electrical Characteristics at 25 C TO-3P FP On-State Current Gate Trigger Current 40 Amp 50 ma (16) Off-Satate Voltage 600 V 800V FEATURES Glass/passivated die junctions High current Triac Low thermal resistance with clip bonding High commutation

More information

3.0 Amp. Surface Mount High Temperature Schottky Barrier Rectifier. Maximun Ratings and Electrical Characteristics at 25 C

3.0 Amp. Surface Mount High Temperature Schottky Barrier Rectifier. Maximun Ratings and Electrical Characteristics at 25 C SOD28 Voltage Current 60 V 3.0 A FEATURE Low profile package Ideal for automated placement Guardring for overvoltage protection Low power losses, high efficiency Low forward voltage drop High forward surge

More information

BZD27C Series. 1 W Surface Mount Zener Diode. Maximum Ratings and Electrical Characteristics at 25 ºC. Current 1 W. Voltage 11 to 220 V DO-219AA (M1F)

BZD27C Series. 1 W Surface Mount Zener Diode. Maximum Ratings and Electrical Characteristics at 25 ºC. Current 1 W. Voltage 11 to 220 V DO-219AA (M1F) DO-219AA (M1F) Voltage 11 to 220 V Maximum Ratings and Electrical Characteristics at ºC Current 1 FEATURES Low profile package Ideal for automated placement Low leakage current High surge current and zener

More information

Dual Common-Cathode Schottky Rectifier

Dual Common-Cathode Schottky Rectifier Dual CommonCathode Schottky Rectifier TO0AB ITO0AB FEATURES Guardring for overvoltage protection Lower power losses, high efficiency Low forward voltage drop High forward surge capability MBR5xxCT PIN

More information

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.39 V at I F = 5 A

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.39 V at I F = 5 A V3000S, VF3000S, VB3000S, VI3000S High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.39 V at I F = 5 TMBS TO-220B ITO-220B 3 2 V3000S VF3000S 2 3 CSE 3 TO-263B TO-262 VB3000S VI3000S

More information

Phase Control Thyristors (Stud Version), 200 A

Phase Control Thyristors (Stud Version), 200 A TO209AB (TO93) ST180SPbF Series FEATURES Center amplifying gate International standard case TO209AB (TO93) Hermetic metal case with ceramic insulator (Also available with glassmetal seal up to 1200 ) RoHS

More information

Dual Common-Cathode Schottky Rectifier

Dual Common-Cathode Schottky Rectifier SBL(F,B)030CT & SBL(F,B)040CT Dual Common-Cathode Schottky Rectifier TO-0AB SBL0xxCT PIN PIN 3 CASE 3 TO-63AB ITO-0AB 3 SBLF0xxCT PIN PIN 3 FEATURES Guardring for overvoltage protection Lower power losses,

More information

High Voltage Phase Control Thyristor, 12 A

High Voltage Phase Control Thyristor, 12 A High oltage Phase Control Thyristor, 2 3L TO-220B PRIMRY CHRCTERISTICS I T() 8 DRM / RRM 800 TM.2 I GT 5 m T J -40 C to 25 C Package Circuit configuration 2 () (K) (G) 3 3L TO-220B Single SCR FETURES Designed

More information

VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series High Voltage Phase Control Thyristor, 70 A

VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series   High Voltage Phase Control Thyristor, 70 A High Voltage Phase Control Thyristor, 70 A Super TO-247 PRODUCT SUMMARY 2 (A) 1 (K) (G) 3 Package Super TO-247 Diode variation Single SCR I T(AV) 70 A V DRM /V RRM 1200 V, 1600 V V TM 1.4 V I GT 100 ma

More information

Fast Switching Plastic Rectifier

Fast Switching Plastic Rectifier BY9(X,B)-00 thru BY9(X,B)-800 Fast Switching Plastic Rectifier TO-0AC BY9 Series PIN PIN CASE TO-63AB ITO-0AC BY9x Series PIN PIN FEATURES Glass passivated chip junction Superfast recovery time for high

More information

Thyristor High Voltage, Phase Control SCR, 40 A

Thyristor High Voltage, Phase Control SCR, 40 A Thyristor High oltage, Phase Control SCR, 40 A FEATURES 2 (A) AEC-Q0 qualified meets ESD 20 class A whisker test 2 3 TO-247AD 3L (K) (G) 3 Flexible solution for reliable AC power rectification Easy control

More information

Thyristor High Voltage, Phase Control SCR, 50 A

Thyristor High Voltage, Phase Control SCR, 50 A S-TPS2LHM3 ishay Semiconductors Thyristor High oltage, Phase Control SCR, A 2 (A) FEATURES AEC-Q qualified, meets JESD 20 class A whisker test Flexible solution for reliable AC power rectification 2 3

More information

Thyristor High Voltage, Phase Control SCR, 40 A

Thyristor High Voltage, Phase Control SCR, 40 A S-40TPS2LHM3, S-40TPS2ALHM3 Thyristor High oltage, Phase Control SCR, 40 A FEATURES 2 (A) Low I GT parts available AEC-Q0 qualified meets JESD 20 class A whisker test 2 3 TO-247AD 3L (K) (G) 3 Flexible

More information

Thyristor/Thyristor (MAGN-A-PAK Power Modules), 320 A

Thyristor/Thyristor (MAGN-A-PAK Power Modules), 320 A Thyristor/Thyristor (MAGN-A-PAK Power Modules), 32 A MAGN-A-PAK PRIMARY CHARACTERISTICS I T(A) 32 A Type Modules - thyristor, standard Package MAGN-A-PAK FEATURES High voltage Electrically isolated base

More information

Single Phase Rectifier Bridge, 2 A

Single Phase Rectifier Bridge, 2 A Single Phase Rectifier Bridge, 2 A 2KBP Series FEATURES Suitable for printed circuit board mounting Compact construction RoHS COMPLIANT D-44 PRODUCT SUMMARY I O V RRM 2 A 50 to 1000 V High surge current

More information

Thyristor High Voltage, Phase Control SCR, 50 A

Thyristor High Voltage, Phase Control SCR, 50 A S-50TPS2L-M3 ishay Semiconductors Thyristor High oltage, Phase Control SCR, 50 A 2 3 TO-247AD 3L PRIMARY CHARACTERISTICS 2 (A) (K) (G) 3 I T(A) 50 A DRM / RRM 200 TM (typ.). I GT (typ.) 40 ma T J -40 C

More information

Phase Control Thyristors (Hockey PUK Version), 1745 A

Phase Control Thyristors (Hockey PUK Version), 1745 A Phase Control Thyristors (Hockey PUK Version), 1745 A VS- FEATURES Center amplifying gate Metal case with ceramic insulator International standard case K-PUK (A-24) High profile hockey PUK Designed and

More information

General Purpose Plastic Rectifier

General Purpose Plastic Rectifier General Purpose Plastic Rectifier N400 thru N4007 DO-204AL (DO-4) FEATURES Low forward voltage drop Low leakage current High forward surge capability Solder dip 275 C max. s, per JESD 22-B6 Compliant to

More information

ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 27 A

ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 27 A FEATURES High voltage Industrial standard package UL approved file E78996 Low thermal resistance Compliant to RoHS directive /95/EC Designed and qualified for industrial level PRODUCT SUMMARY I T(A) or

More information

Phase Control Thyristors (Hockey-PUK Version), 2310 A

Phase Control Thyristors (Hockey-PUK Version), 2310 A Phase Control Thyristors (Hockey-PUK Version), 2310 A VS- FEATURES Center amplifying gate Metal case with ceramic insulator International standard case K-PUK (A-24) High profile hockey PUK Material categorization:

More information

VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series Thyristor High Voltage, Phase Control SCR, 70 A

VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series   Thyristor High Voltage, Phase Control SCR, 70 A Thyristor High Voltage, Phase Control SCR, 70 A 2 (A) FEATURES High surge capability High voltage input rectification 2 Designed and qualified according to JEDEC -JESD47 3 Super TO-247 (K) (G) 3 Material

More information

Phase Control Thyristors (Hockey PUK Version), 1350 A

Phase Control Thyristors (Hockey PUK Version), 1350 A Phase Control Thyristors (Hockey PUK Version), 1350 A FEATURES Center amplifying gate Metal case with ceramic insulator International standard case B-PUK (TO-200AC) Designed and qualified for industrial

More information

High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier

High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier esmp TM Series 2 TO-277A (SMPC) Anode FEATURES Very low profile - typical height of. mm Ideal for automated placement Low forward

More information

Phase Control Thyristor RMS SCRs, 25 A, 35 A

Phase Control Thyristor RMS SCRs, 25 A, 35 A VS-N681, VS-N Series Phase Control Thyristor RMS SCRs, A, 3 A TO-8 (TO-8AA) V DRM /V RRM PRIMARY CHARACTERISTICS I T(AV) 16 A, A I T(RMS) A, 3 A 3 V, V, V, 6 V, 7 V, 8 V, V, V, 1 V, 1 V, V, V, 1 V 1 V

More information

Surface Mount Glass Passivated Rectifier

Surface Mount Glass Passivated Rectifier Surface Mount Glass Passivated Rectifier DO-24AC (SMA) PRIMARY CHARACTERISTICS I F(AV) 2.0 A V RRM 200 V, 400 V, 600 V, 800 V, 00 V I FSM 50 A I R 5.0 μa V F at I F = 2.0 A (T A = 25 C) 0.90 V T J max.

More information

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = V at I F = 10 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = V at I F = 10 A V8P Dual HighVoltage Trench MOS Barrier Schottky Rectifier Ultra Low V F =.425 V at I F = A TMBS FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses 2 TO247AD (TO3P) PIN

More information

FEATURES. Package. PARAMETER SYMBOL PB4006 PB4008 PB4010 UNIT Maximum repetitive peak reverse voltage V RRM V

FEATURES. Package. PARAMETER SYMBOL PB4006 PB4008 PB4010 UNIT Maximum repetitive peak reverse voltage V RRM V Enhanced isocink+ TM Bridge Rectifiers + isocink+ ~ ~ - - ~ ~ + ~ ~ Case Style PB FEATURES UL recognition file number E32394 (QQQX2) UL 557 (see *) Enhanced high-current density single in-line package

More information

Glass Passivated Ultrafast Plastic Rectifier

Glass Passivated Ultrafast Plastic Rectifier Glass Passivated Ultrafast Plastic Rectifier SUPERECTIFIER DO-204AL (DO-4) FEATURES Superectifier structure for high reliability condition Cavity-free glass-passivated junction Ideal for printed circuit

More information

Glass Passivated Junction Plastic Rectifier

Glass Passivated Junction Plastic Rectifier N400GP, N4002GP, N4003GP, N4004GP, N4005GP, N4006GP, N4007GP Glass Passivated Junction Plastic Rectifier SUPERECTIFIER DO-204AL (DO-4) FEATURES Superectifier structure for high reliability application

More information

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V F = 0.33 V at I F = A TMBS 2 VBT6045CBP PIN PIN 2 HEATSIN PRIMARY CHARACTERISTICS I F(AV) 2 x 30 A V RRM 45 V I FSM

More information

Schottky Barrier Rectifier

Schottky Barrier Rectifier Schottky Barrier Rectifier TO-0AC ITO-0AC FEATURES Power pack Low power loss, high efficiency Low forward voltage drop High forward surge capability High frequency operation CASE D PA (TO-63AB) MBRF045

More information

FEATURES. Package. PARAMETER SYMBOL PB3506 PB3508 PB3510 UNIT Maximum repetitive peak reverse voltage V RRM V 35 T A = 25 C (2) 4.

FEATURES. Package. PARAMETER SYMBOL PB3506 PB3508 PB3510 UNIT Maximum repetitive peak reverse voltage V RRM V 35 T A = 25 C (2) 4. PB356, PB358, PB35 Enhanced isocink+ TM Bridge Rectifiers + isocink+ ~ ~ - - ~ ~ + ~ ~ Case Style PB FEATURES UL recognition file number E32394 (QQQX2) UL 557 (see *) Enhanced high-current density single

More information

Single Phase Rectifier Bridge, 2 A

Single Phase Rectifier Bridge, 2 A Single Phase Rectifier Bridge, 2 A 2KBP Series FEATURES Suitable for printed circuit board mounting Compact construction RoHS COMPLIANT D-44 PRODUCT SUMMARY I O V RRM 2 A 50 to 1000 V High surge current

More information

Surface Mount Trench MOS Barrier Schottky Rectifier

Surface Mount Trench MOS Barrier Schottky Rectifier Surface Mount Trench MOS Barrier Schottky Rectifier TMBS SMPA TM Top View Bottom View DO-22BC (SMPA) PRIMARY CHARACTERISTICS I F(AV) 3.0 A V RRM 50 V I FSM 80 A V F at I F = 3.0 A (T A = 25 C) 0.40 V T

More information

Enhanced isocink+ Bridge Rectifiers

Enhanced isocink+ Bridge Rectifiers Enhanced isocink+ Bridge Rectifiers - ~ ~ + isocink+ Case Style BU PRIMARY CHARACTERISTICS Package BU I F(AV) 5 A V RRM 6 V, 8 V, V I FSM 2 A I R 5 μa V F at I F = 7.5 A.87 V T J max. 5 C Circuit configuration

More information

UF4001, UF4002, UF4003, UF4004, UF4005, UF4006, UF4007 Ultrafast Plastic Rectifier

UF4001, UF4002, UF4003, UF4004, UF4005, UF4006, UF4007  Ultrafast Plastic Rectifier UF400, UF4002, UF4003, UF4004, UF4005, UF4006, UF4007 Ultrafast Plastic Rectifier FEATURES Glass passivated chip junction Ultrafast reverse recovery time Low forward voltage drop Low switching losses,

More information

Dual Common-Cathode Ultrafast Recovery Rectifier

Dual Common-Cathode Ultrafast Recovery Rectifier New Product UH0FCT& UHB0FCT Dual Common-Cathode Ultrafast Recovery Rectifier FEATURES Oxide planar chip junction TO-0AB TO-63AB Ultrafast recovery times Soft recovery characteristics Low switching losses,

More information

AAP Gen 7 (TO-240AA) Power Modules Thyristor/Thyristor, 105 A

AAP Gen 7 (TO-240AA) Power Modules Thyristor/Thyristor, 105 A AAP Gen 7 (TO-240AA) Power Modules Thyristor/Thyristor, 05 A FEATURES High voltage Industrial standard package UL approved file E78996 Low thermal resistance Designed and qualified for industrial level

More information

Ultrafast Avalanche SMD Rectifier

Ultrafast Avalanche SMD Rectifier Ultrafast Avalanche SMD Rectifier PRIMARY CHARACTERISTICS I F(AV) 1.5 A V RRM V I FSM 3 A I R 5. μa t rr 75 ns V F 1.7 V E R 2 mj T J max. 15 C Package Diode variations Single FEATURES Low profile package

More information

Phase Control Thyristors (Stud Version), 330 A

Phase Control Thyristors (Stud Version), 330 A Phase Control Thyristors (Stud Version), 330 A TO-118 (TO- 209AE) PRIMARY CHARACTERISTICS I T(AV) 330 A 400 V, 800 V, 1200 V, 1400 V, V DRM /V RRM 1600 V, 2000 V V TM 1.52 V I GT 200 ma T J -40 C to +125

More information

Thyristor High Voltage, Phase Control SCR, 16 A

Thyristor High Voltage, Phase Control SCR, 16 A Thyristor High Voltage, Phase Control SCR, 6 3L TO-220B PRIMRY CHRCTERISTICS 2 () (K) (G) 3 I T(V) V DRM /V RRM 800 V, 0 V V TM.4 V I GT 60 m T J -40 C to 25 C Package 3L TO-220B Circuit configuration

More information

Phase Control Thyristors (Stud Version), 300 A

Phase Control Thyristors (Stud Version), 300 A Phase Control Thyristors (Stud Version), 300 A TO-118 (TO- 209AE) PRIMARY CHARACTERISTICS I T(AV) 300 A 400 V, 800 V, 1200 V, 1600 V, V DRM /V RRM 1800 V, 2000 V V TM 1.28 V I GT 200 ma T J -40 C to +125

More information

Surface Mount Power Voltage-Regulating Diodes

Surface Mount Power Voltage-Regulating Diodes Surface Mount Power Voltage-Regulating Diodes DO-24AC (SMA) FEATURES Low profile package Ideal for automated placement Low Zener impedance Low regulation factor Meets MSL level, per J-STD-2, if maximum

More information

General Purpose Plastic Rectifier

General Purpose Plastic Rectifier General Purpose Plastic Rectifier N400 thru N4007 DO-204AL (DO-4) PRIMARY CHARACTERISTICS I F(AV).0 A V RRM V to 00 V I FSM (8.3 ms sine-wave) A I FSM (square wave t p = ms) 45 A V F. V I R 5.0 µa T J

More information

Phase Control Thyristors (Stud Version), 110 A

Phase Control Thyristors (Stud Version), 110 A VS-RKI...PbF, VS-RKI...PbF Series Phase Control Thyristors (Stud Version), A TO-94 (TO-29AC) PRIMARY CHARACTERISTICS I T(AV) A V DRM /V RRM 4 V, 8 V, 2 V V TM.57 V I GT 8 ma T J -4 C to +4 C Package TO-94

More information

High Voltage Schottky Rectifier

High Voltage Schottky Rectifier MB0H90, MB0H, MF0H High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance ITO-220AC D 2 PA (TO-263AB) 2 2 MB0H90 MF0H MB0H PIN PIN PIN 2 PIN 2 HEATSIN PRIMARY

More information

SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A, 250 A

SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A, 250 A SCR/SCR and SCR/Diode (MAGNAPAK Power Modules), 17 A, 25 A MAGNAPAK PRIMARY CHARACTERISTICS I T(AV) 17 A, 25 A Type Modules thyristor, standard Package MAGNAPAK FEATURES High voltage Electrically isolated

More information

Medium Power Phase Control Thyristors (Stud Version), 50 A

Medium Power Phase Control Thyristors (Stud Version), 50 A Medium Power Phase Control Thyristors (Stud Version), 50 A VS- TO-208AC (TO-65) PRODUCT SUMMARY Package TO-208AC (TO-65) Diode variation Single SCR I T(AV) 50 A V DRM /V RRM V to 1200 V V TM 1.60 V I GT

More information

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier V5PL50 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.8 V at I F = 5 A TMBS esmp Series Anode Cathode Anode PRIMARY CHARACTERISTICS I F(AV) 5 A V RRM 50 V I

More information

FEATURES. PARAMETER SYMBOL V8PAM10 UNIT Device marking code Maximum repetitive peak reverse voltage V RRM 100 V

FEATURES. PARAMETER SYMBOL V8PAM10 UNIT Device marking code Maximum repetitive peak reverse voltage V RRM 100 V Surface-Mount TMBS (Trench MOS Barrier Schottky) Rectifier esmp Series Top View Bottom View Anode Cathode FEATURES Very low profile - typical height of 0.95 mm Ideal for automated placement Trench MOS

More information

Thyristor High Voltage, Phase Control SCR, 25 A

Thyristor High Voltage, Phase Control SCR, 25 A Thyristor High Voltage, Phase Control SCR, 25 TO-220B 2 3 2 () (K) (G) 3 FETURES Easy control peak current at charger power up to reduce passive / electromechanical components Meets JESD 20 class whisker

More information

Ultrafast Rectifier FEATURES

Ultrafast Rectifier FEATURES Ultrafast Rectifier TO-AC ITO-AC BYW9 Series BYWF9 Series PIN PIN CASE D PA (TO-63AB) BYWB9 Series PIN HEATSIN DESIGN SUPPORT TOOLS click logo to get started FEATURES Power pack Glass passivated pellet

More information

Dual Common Cathode Ultrafast Plastic Rectifier

Dual Common Cathode Ultrafast Plastic Rectifier 6xT, F6xT, B6xT Dual Common Cathode Ultrafast Plastic Rectifier TO-220AB ITO-220AB FEATURES Power pack Glass passivated pellet chip junction Ultrafast recovery time Low switching losses, high efficiency

More information

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.29 V at I F = 5 A TMBS esmp Series 2 Anode Cathode Anode 2 PRIMARY CHARACTERISTICS I F(AV) 25 A V RRM 60 V I FSM

More information

Surface Mount Trench MOS Barrier Schottky Rectifier

Surface Mount Trench MOS Barrier Schottky Rectifier Surface Mount Trench MOS Barrier Schottky Rectifier TMBS SMPA TM Top View Bottom View DO-22BC (SMPA) FEATURES Very low profile - typical height of 0.95 mm Ideal for automated placement Trench MOS Schottky

More information

Thyristor High Voltage Surface Mount Phase Control SCR, 10 A

Thyristor High Voltage Surface Mount Phase Control SCR, 10 A VS-SPbF Series Thyristor High Voltage Surface Mount Phase Control SCR, 0 2 TO-263 (D 2 PK) 3 2, node Cathode 3 Gate PRODUCT SUMMRY Package TO-263 (D 2 PK) Diode variation Single SCR I T(V) 6.5 V DRM /V

More information

Surface Mount Ultrafast Plastic Rectifier

Surface Mount Ultrafast Plastic Rectifier Surface Mount Ultrafast Plastic Rectifier PRIMARY CHARACTERISTICS I F(AV) 1.0 A V RRM 200 V I FSM 40 A t rr 25 ns V F 0.71 V T J max. 175 C Package Diode variations Single die FEATURES Glass passivated

More information

Ultrafast Plastic Rectifier

Ultrafast Plastic Rectifier 8xT, F8xT, B8xT Ultrafast Plastic Rectifier TO-0AC ITO-0AC FEATURES Power pack Glass passivated pellet chip junction Ultrafast recovery time Low switching losses, high efficiency 8xT PIN F8xT PIN Low leakage

More information

Part Ordering code Type Marking Remarks BAS85 BAS85-GS18 or BAS85-GS08 - Tape and Reel

Part Ordering code Type Marking Remarks BAS85 BAS85-GS18 or BAS85-GS08 - Tape and Reel Small Signal Schottky Diode Features For general purpose applications This diode features low turn-on voltage The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic

More information

Surface Mount Trench MOS Barrier Schottky Rectifier

Surface Mount Trench MOS Barrier Schottky Rectifier Surface Mount Trench MOS Barrier Schottky Rectifier TMBS esmp Series Top View SlimSMA (DO-22AC) Cathode DESIGN SUPPORT TOOLS Models Available Bottom View PRIMARY CHARACTERISTICS Anode click logo to get

More information

VS-VSKT91.., VS-VSKH91.., VS-VSKL91.., VS-VSKN91.. Series

VS-VSKT91.., VS-VSKH91.., VS-VSKL91.., VS-VSKN91.. Series AAP Gen 7 (TO-4AA) Power Modules Thyristor/Diode and Thyristor/Thyristor, 95 A FEATURES High voltage Industrial standard package Low thermal resistance UL approved file E78996 Designed and qualified for

More information

Small Signal Fast Switching Diode FEATURES

Small Signal Fast Switching Diode FEATURES Small Signal Fast Switching Diode = Cathode = Anode 6 MARKING (example only) FEATURES These diodes are also available in other case styles including the DO- case with the type designation N8, the MiniMELF

More information

High Voltage Schottky Rectifier

High Voltage Schottky Rectifier MBR0H, MBRF0H, MBRB0H High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-0AC MBR0H PIN CASE MBRB0H PIN D PA (TO-63AB) ITO-0AC MBRF0H PIN HEATSIN FEATURES

More information

FEATURES. Package. PARAMETER SYMBOL PB4006 PB4008 PB4010 UNIT Maximum repetitive peak reverse voltage V RRM V 40 T A = 25 C (2) 4.

FEATURES. Package. PARAMETER SYMBOL PB4006 PB4008 PB4010 UNIT Maximum repetitive peak reverse voltage V RRM V 40 T A = 25 C (2) 4. Enhanced isocink+ TM Bridge Rectifiers + isocink+ ~ ~ - - ~ ~ + ~ ~ Case Style PB FEATURES UL recognition file number E32394 (QQQX2) UL 557 (see *) Enhanced high-current density single in-line package

More information

Schottky Barrier Rectifiers

Schottky Barrier Rectifiers Schottky Barrier Rectifiers FEATURES Guardring for overvoltage protection Very small conduction losses Extremely fast switching Low forward voltage drop DO-204AL (DO-4) High frequency operation Solder

More information

Fast Avalanche SMD Rectifier

Fast Avalanche SMD Rectifier BYG2K-E3/HE3, BYG2M-E3/HE3 Fast Avalanche SMD Rectifier SMA (DO-24AC) PRIMARY CHARACTERISTICS I F(AV).5 A V RRM 8 V, V I FSM 3 A I R. μa V F.6 V t rr 2 ns E R 2 mj T J max. 5 C Package SMA (DO-24AC) Diode

More information

Dual Common-Cathode Ultrafast Rectifier

Dual Common-Cathode Ultrafast Rectifier Dual Common-Cathode Ultrafast Rectifier TO-22AB BYV32 Series PIN PIN 3 CASE 2 3 TO-263AB ITO-22AB 2 3 BYVF32 Series PIN PIN 3 2 FEATURES Power pack Glass passivated pellet chip junction Ultrafast recovery

More information

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.34 V at I F = 4 A TMBS esmp Series TO-77A (SMPC) Anode Cathode Anode PRIMARY CHARACTERISTICS I F(AV) 8.0 A V RRM

More information

Ultrafast Avalanche SMD Rectifier

Ultrafast Avalanche SMD Rectifier Ultrafast Avalanche SMD Rectifier PRIMARY CHARACTERISTICS I F(AV) 1.5 A V RRM 1 V I FSM 3 A I R 5. μa t rr 75 ns V F 1.7 V E R 2 mj T J max. 15 C Package Circuit configuration Single FEATURES Low profile

More information

Phase Control Thyristors (Stud Version), 110 A

Phase Control Thyristors (Stud Version), 110 A Phase Control Thyristors (Stud Version), 110 A TO-209AC (TO-94) PRODUCT SUMMARY I T(AV) 110 A V DRM /V RRM 400 V, 1600 V V TM 1.52 V I GT 150 ma T J -40 C to 140 C Package TO-209AC (TO-94) Diode variation

More information

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier V40PWM2C High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.50 V at I F = 5 A TMBS esmp Series 2 SlimDPAK (TO-252AE) PIN K K FEATURES Very low profile - typical

More information

Thyristor/Thyristor, 150 A (INT-A-PAK Power Module)

Thyristor/Thyristor, 150 A (INT-A-PAK Power Module) S-/4PbF Thyristor/Thyristor, 5 A (INT-A-PAK Power Module) INT-A-PAK PRIMARY CHARACTERISTICS I T(A) 5 A Type Modules - thyristor, standard Package INT-A-PAK FEATURES Electrically isolated by DBC ceramic

More information

High Temperature Stability and High Reliability Conditions FEATURES. PARAMETER SYMBOL VALUE UNIT with 10/1000 μs waveform Peak pulse power dissipation

High Temperature Stability and High Reliability Conditions FEATURES. PARAMETER SYMBOL VALUE UNIT with 10/1000 μs waveform Peak pulse power dissipation Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions PRIMARY CHARACTERISTICS V WM 1 V to 36 V V BR 11.1 V to 44.2 V P PPM (1 x 1 μs) 36 W P PPM (1

More information

Ultrafast Plastic Rectifier

Ultrafast Plastic Rectifier Ultrafast Plastic Rectifier 6xT, F6xT, B6xT TO-0AC 6xT Series PIN CASE ITO-0AC F6xT Series PIN D PA (TO-63AB) B6xT Series PIN HEATSIN FEATURES Power pack Glass passivated pellet chip junction Ultrafast

More information

Thyristor / Diode (Super MAGN-A-PAK Power Modules), 570 A

Thyristor / Diode (Super MAGN-A-PAK Power Modules), 570 A VS- Thyristor / Diode (Super MAGN-A-PAK Power Modules), 570 A FEATURES High current capability High surge capability Industrial standard package 3000 V RMS isolating voltage with non-toxic substrate Designed

More information

High Current Density Surface Mount Ultrafast Rectifiers

High Current Density Surface Mount Ultrafast Rectifiers High Current Density Surface Mount Ultrafast Rectifiers esmp Series PRIMARY CHARACTERISTICS I F(AV).0 A V RRM 0 V, 50 V, 200 V t rr 25 ns V F 0.90 V T J max. 75 C Package Diode variations Single die FEATURES

More information

SA5.0A thru SA170CA. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES PRIMARY CHARACTERISTICS

SA5.0A thru SA170CA. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor.   FEATURES PRIMARY CHARACTERISTICS TRANSZORB Transient Voltage Suppressors DO-204AC (DO-15) PRIMARY CHARACTERISTICS V WM 5.0 V to 170 V P PPM 500 W P D 3.0 W I FSM (uni-directional only) 70 A T J max. 175 C DEVICES FOR BI-DIRECTION APPLICATIONS

More information

Photovoltaic Solar Cell Protection Schottky Rectifier

Photovoltaic Solar Cell Protection Schottky Rectifier Photovoltaic Solar Cell Protection Schottky Rectifier Ultra Low V F = 0.30 V at I F = 5.0 A FEATURES TMBS Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation

More information

Zener Diodes with Surge Current Specification

Zener Diodes with Surge Current Specification Zener Diodes with Surge Current Specification 17249 PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V Z range nom. 3.6 to 200 V Test current I ZT 5 to 0 ma V BR 7 to 188 V V WM 6.2 to 160 V P PPM 150 W T

More information

S07B, S07D, S07G, S07J, S07M

S07B, S07D, S07G, S07J, S07M Small Signal Switching Diode, High Voltage S07B, S07D, S07G, S07J, S07M Features For surface mounted applications Low profile package Ideal for automated placement Glass passivated High temperature soldering:

More information

Enhanced isocink+ Bridge Rectifiers

Enhanced isocink+ Bridge Rectifiers Enhanced isocink+ Bridge Rectifiers + ~ ~ - - ~ ~ + isocink+ Case Style BU + ~ ~ - * Tested to UL standard for safety electrically isolated semiconductor devices. UL 1557 4th edition. Dielectric tested

More information

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection www.vishay.com Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V F = 0.4 V at I F = 5 A VBT045BP-E3 TMBS DESIGN SUPPORT TOOLS Models Available PRIMARY CHARACTERISTICS

More information

Surface Mount Ultrafast Plastic Rectifier

Surface Mount Ultrafast Plastic Rectifier Surface Mount Ultrafast Plastic Rectifier SMA (DO-24AC) PRIMARY CHARACTERISTICS I F(AV). A V RRM 5 V, V, 5 V, 2 V I FSM 3 A t rr 5 ns V F at I F.92 V T J max. 5 C Package SMA (DO-24AC) Diode variations

More information

Thyristor High Voltage, Phase Control SCR, 40 A

Thyristor High Voltage, Phase Control SCR, 40 A Thyristor High Voltage, Phase Control SCR, 40 TO-247C 2 () (K) (G) 3 PRIMRY CHRCTERISTICS I T(V) 35 V DRM /V RRM 800 V, 200 V V TM.45 V I GT 50 m T J -40 C to +25 C Package TO-247C Circuit configuration

More information

Medium Power Phase Control Thyristors (Stud Version), 16 A

Medium Power Phase Control Thyristors (Stud Version), 16 A Medium Power Phase Control Thyristors (Stud Version), 16 A VS- PRODUCT SUMMARY TO-208AA (TO-48) Package TO-208AA (TO-48) Diode variation Single SCR I T(AV) 16 A 0 V, 200 V, 400 V, 600 V, 800 V, V DRM /V

More information

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Dual High Voltage Trench MOS Barrier Schottky Rectifier MBRF9CT-M3, MBRFCT-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier TMBS ITO-22AB 2 3 PIN PIN 2 PIN 3 PRIMARY CHARACTERISTICS I F(AV) 2 x 5. A V RRM 9 V, V I FSM 2 A V F.75 V T J max. 5 C Package

More information

High Voltage Ultrafast Avalanche SMD Rectifiers

High Voltage Ultrafast Avalanche SMD Rectifiers High Voltage Ultrafast Avalanche SMD Rectifiers PRIMARY CHARACTERISTICS I F(AV) DO-24AC (SMA).0 A FEATURES Glass passivated pellet chip junction Low profile package Ideal for automated placement Low reverse

More information

Hyper Fast Rectifier, 2 x 3 A FRED Pt

Hyper Fast Rectifier, 2 x 3 A FRED Pt Hyper Fast Rectifier, 2 x 3 A FRED Pt VS-6DKH2HM3 8 7 6 5 FlatPAK 5 x 6, 2 7, 8 2 3 4 FEATURES Hyper fast recovery time, reduced Q rr, and Available soft recovery 75 C maximum operating junction temperature

More information

Power Modules, Passivated Assembled Circuit Elements, 25 A

Power Modules, Passivated Assembled Circuit Elements, 25 A Power Modules, Passivated Assembled Circuit Elements, 25 A VS-P Series FEATURES Glass passivated junctions for greater reliability Electrically isolated base plate PACE-PAK (D-9) PRIMARY CHARACTERISTICS

More information

Optocoupler, Phototriac Output, Non-Zero Crossing

Optocoupler, Phototriac Output, Non-Zero Crossing Optocoupler, Phototriac Output, Non-Zero Crossing FEATURES I TRMS = 300 ma High static dv/dt < 10 000 V/μs A 1 6 MT2 Electrically insulated between input and output circuit C 2 NC Microcomputer compatible

More information

Enhanced isocink+ Bridge Rectifiers

Enhanced isocink+ Bridge Rectifiers Enhanced isocink+ Bridge Rectifiers isocink+ - ~ ~ + Case Style BU * Tested to UL standard for safety electrically isolated semiconductor devices. UL 557 th edition. Dielectric tested to maximum case,

More information

Dual Common Cathode Ultrafast Plastic Rectifier

Dual Common Cathode Ultrafast Plastic Rectifier Dual Common Cathode Ultrafast Plastic Rectifier TO-2AB UGE8xCT PIN PIN 2 3 2 FEATURES Power pack Glass passivated pellet chip junction Ultrafast recovery time Low switching losses, high efficiency Low

More information

Surface Mount Trench MOS Barrier Schottky Rectifier

Surface Mount Trench MOS Barrier Schottky Rectifier Surface Mount Trench MOS Barrier Schottky Rectifier TMBS esmp Series Top View Bottom View SlimSMA (DO-22AC) Cathode Anode FEATURES Very low profile - typical height of 0.95 mm Ideal for automated placement

More information

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Dual High Voltage Trench MOS Barrier Schottky Rectifier V300C, VI300C Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.455 V at I F = 5 A TO-220AB 2 3 V300C PIN PIN 2 PIN 3 CASE TMBS TO-262AA K 2 3 VI300C PIN PIN 2 PIN 3 K FEATURES

More information

Surface Mount Ultrafast Plastic Rectifier

Surface Mount Ultrafast Plastic Rectifier Surface Mount Ultrafast Plastic Rectifier DO-24AB (SMC) PRIMARY CHARACTERISTICS I F(AV) 3. A V RRM 3 V, 4 V I FSM A t rr 35 ns V F at I F. V T J max. 5 C Package DO-24AB (SMC) Diode variations Single die

More information

Phase Control SCR, 70 A

Phase Control SCR, 70 A Phase Control SCR, 70 A 70TPS..PbF High oltage Series ishay High Power Products 2 (A) DESCRIPTION/FEATURES The 70TPS..PbF High oltage Series of silicon controlled rectifiers are specifically designed for

More information

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero High Speed Infrared Emitting Diode, 83 nm, GaAlAs Double Hetero 94 8389 DESCRIPTION is an infrared, 83 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed,

More information

ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A

ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A ADD-A-PAK Generation II Power Modules Thyristor/Diode and Thyristor/Thyristor, 45 A/6 A FEATURES High voltage Industrial standard package Low thermal resistance UL approved file E78996 Designed and qualified

More information

Enhanced Power Bridge Rectifiers

Enhanced Power Bridge Rectifiers New Product BU506 thru BU5 Enhanced Power Bridge Rectifiers TM PowerBridge + ~ ~ - - ~ ~ + Case Style BU + ~ ~ - * Tested to UL standard for safety electrically isolated semiconductor devices. UL 557 4th

More information

Surface Mount Ultrafast Plastic Rectifier

Surface Mount Ultrafast Plastic Rectifier Surface Mount Ultrafast Plastic Rectifier PRIMARY CHARACTERISTICS I F(AV) 3. A V RRM 5 V, V, 15 V, 2 V I FSM A t rr 2 ns V F.9 V T J max. 15 C Package Diode variations Single FEATURES Glass passivated

More information