Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = V at I F = 10 A
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1 V8P Dual HighVoltage Trench MOS Barrier Schottky Rectifier Ultra Low V F =.425 V at I F = A TMBS FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses 2 TO247AD (TO3P) PIN PIN 2 PIN 3 CASE 3 High efficiency operation Low thermal resistance Solder dip 26 C, 4 s Component in accordance to RoHS 22/95/EC and WEEE 22/96/EC PRIMARY CHARACTERISTICS I F(AV) 8 A V RRM V I FSM 5 A V F at I F = 4 A.667 V T J max. 5 C TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, ORing diode, dctodc converters and reverse battery protection. MECHANICAL DATA Case: TO247AD (TO3P) Epoxy meets UL 94V flammability rating Terminals: Matte tin plated leads, solderable per JSTD2 and JESD22B2 E3 suffix for consumer grade, meets JESD 2 class A whisker test Polarity: As marked Mounting Torque: inlbs maximum MAXIMUM RATINGS (T A = 25 C unless otherwise noted) PARAMETER SYMBOL V8P UNIT Maximum repetitive peak reverse voltage V RRM V Maximum average forward rectified current (Fig. ) per device per diode I F(AV) 8 4 A Peak forward surge current 8.3 ms single half sinewave superimposed on rated load per diode I FSM 5 A Peak repetitive reverse current per diode at t p = 2 µs, khz I RRM. A Voltage rate of change (rated V R ) dv/dt V/µs Operating junction and storage temperature range T J, T STG 4 to + 5 C Revision: 26May8 PDDAmericas@vishay.com, PDDAsia@vishay.com, PDDEurope@vishay.com
2 Average Forward Current (A) V8P ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I R =. ma V BR (minimum) V Instantaneous forward voltage per diode () I F = A I F = 2 A I F = 4 A I F = A I F = 2 A I F = 4 A T J = 25 C V F V Reverse current per diode (2) V R = 8 V V R = V T J = 25 C T J = 25 C I R µa ma µa ma Notes: () Pulse test: 3 µs pulse width, % duty cycle (2) Pulse test: Pulse width 4 ms THERMAL CHARACTERISTICS (T A = 25 C unless otherwise noted) PARAMETER SYMBOL V8P UNIT Typical thermal resistance per diode R θjc.5 C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V8PE3/ /tube Tube RATINGS AND CHARACTERISTICS CURVES (T A = 25 C unless otherwise noted) Resistive or Inductive Load Average Power Loss (W) D =. D =.2 D =.8 D =.5 D =.3 D =. T D = t p /T t p Case Temperature ( C) Average Forward Current (A) Figure. Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics Per Diode 2 PDDAmericas@vishay.com, PDDAsia@vishay.com, PDDEurope@vishay.com Revision: 26May8
3 Transient Thermal Impedance ( C/W) Junction Capacitance (pf) V8P Peak Forward Surge Current (A) T J = T J Max. 8.3 ms Single Half SineWave f =. MHz V sig = 5 mvpp Number of Cycles at 6 Hz Figure 3. Maximum NonRepetitive Peak Forward Surge Current Per Diode. Reverse Voltage (V) Figure 6. Typical Junction Capacitance Per Diode Instantaneous Forward Current (A) T J = 25 C T J = 5 C Junction to Case Instantaneous Forward Voltage (V)... t Pulse Duration (s) Figure 4. Typical Instantaneous Forward Characteristics Per Diode Figure 7. Typical Transient Thermal Impedance Per Diode Instantaneous Reverse Current (ma) T J = 5 C T J = 25 C Percent of Rated Peak Reverse Voltage (%) Figure 5. Typical Reverse Characteristics Per Diode Revision: 26May8 PDDAmericas@vishay.com, PDDAsia@vishay.com, PDDEurope@vishay.com 3
4 V8P PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO247AD (TO3P).245 (6.2).225 (5.7).645 (6.4).625 (5.9).323 (8.2).33 (7.9).23 (5.6).93 (4.9) 3.78 (.98) REF..84 (2.3).82 (2.8).7 (4.3).42 (3.6).38 (3.5) TYP. Both Sides.6 (4.).4 (3.5).795 (2.2).775 (9.6) (2.8).76 (.93).27 (3.22).7 (2.97).8 (3.).8 (2.7) REF. Both Sides.225 (5.7).25 (5.2).48 (.22).44 (.2).3 (.76).2 (.5) PIN PIN 2 PIN 3 CASE 4 PDDAmericas@vishay.com, PDDAsia@vishay.com, PDDEurope@vishay.com Revision: 26May8
5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, lifesaving, or lifesustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 Revision: 8Jul8
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