Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = V at I F = 10 A

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Lorraine Flowers
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1 New Product V8P Dual HighVoltage Trench MOS Barrier Schottky Rectifier Ultra Low V F =.425 V at I F = A TO247AD (TO3P) PIN PIN 3 PIN 2 CASE 3 2 MAJOR RATINGS AND CHARACTERISTICS I F(AV) 8 A V RRM V I FSM 5 A V F at I F = 4 A.667 V T j max. 5 C FEATURES Trench MOS Schottky Technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Solder Dip 26 C, 4 seconds Component in accordance to RoHS 22/95/EC and WEEE 22/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, Oring diode, dctodc converters and reverse battery protection. MECHANICAL DATA Case: TO247AD (TO3P) Epoxy meets UL 94V flammability rating Terminals: Matte tin plated leads, solderable per JSTD2B and JESD22B2D E3 suffix for commercial grade Polarity: As marked Mounting Torque: inlbs maximum MAXIMUM RATINGS (T A = 25 C unless otherwise noted) PARAMETER SYMBOL V8P UNIT Maximum repetitive peak reverse voltage V RRM V Maximum average forward rectified current (see Fig. ) per device per diode Peak forward surge current 8.3 ms single half sinewave superimposed on rated load per diode I FSM 5 A Peak repetitive reverse current per diode at t p = 2 µs, khz I RRM. A Voltage rate of change (rated V R ) dv/dt V/µs Operating junction and storage temperature range T J, T STG 4 to + 5 C I F(AV) 8 4 A ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage at I R =. ma T J = 25 C V (BR) (minimum) V Instantaneous forward voltage per diode () at I F = A I F = 2 A I F = 4 A at I F = A I F = 2 A I F = 4 A T J = 25 C T J = 25 C V F V 22Aug6

2 Average Forward Current (A) V8P ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Reverse current per diode () Note: () Pulse test: 3 µs pulse width, % duty cycle at V R = 8 V T J = 25 C T J = 25 C at V R = V T J = 25 C T J = 25 C I R µa ma µa ma THERMAL CHARACTERISTICS (T A = 25 C unless otherwise noted) PARAMETER SYMBOL V8P UNIT Typical thermal resistance per diode R θjc.5 C/W ORDERING INFORMATION PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V8PE3/ /Tube Tube RATINGS AND CHARACTERISTICS CURVES (T A = 25 C unless otherwise noted) Resistive or Inductive Load Average Power Loss (W) D =. D =.2 D =.8 D =.5 D =.3 D =. T D = tp/t tp Case Temperature ( C) Average Forward Current (A) Figure. Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics Per Diode 2 22Aug6

3 Transient Thermal Impedance ( C/W) Junction Capacitance (pf) V8P Peak Forward Surge Current (A) TJ = TJ max. 8.3 ms Single Half SineWave f =. MHz Vsig = 5 mvpp Number of Cycles at 6 Hz Figure 3. Maximum NonRepetitive Peak Forward Surge Current Per Diode. Reverse Voltage (V) Figure 6. Typical Junction Capacitance Per Diode Instantaneous Forward Current (A) TJ = 5 C Junction to Case Instantaneous Forward Voltage (V)... t Pulse Duration (s) Figure 4. Typical Instantaneous Forward Characteristics Per Diode Figure 7. Typical Transient Thermal Impedance Per Diode Instantaneous Reverse Current (ma).. TJ = 5 C Percent of Rated Peak Reverse Voltage (%) Figure 5. Typical Reverse Characteristics Per Diode 22Aug6 3

4 V8P PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO 247AD (T O3P).245 (6.2).225 (5.7).645 (6.4).625 (5.9).323 (8.2).33 (7.9).23 (5.6).93 (4.9) 3.78 REF (.98).84 (2.3).82 (2.8).7 (4.3).42 (3.6).38 (3.5) TYP. BOTH SIDES.6 (4.).4 (3.5).795 (2.2).775 (9.6) (2.8).76 (.93).27 (3.22).7 (2.97).8 (3.).8 (2.7) REF. BOTH SIDES.225 (5.7).25 (5.2).48 (.22).44 (.2).3 (.76).2 (.5) PIN PIN 2 PIN 3 CASE 4 22Aug6

5 Notice Legal Disclaimer Notice Vishay Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, lifesaving, or lifesustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 9 Revision: 8Apr5

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = V at I F = 10 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = V at I F = 10 A V8P Dual HighVoltage Trench MOS Barrier Schottky Rectifier Ultra Low V F =.425 V at I F = A TMBS FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses 2 TO247AD (TO3P) PIN