High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier
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1 High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier esmp TM Series TO-77A (SMPC) Cathode Anode Anode PRIMARY CHARACTERISTICS I F(AV) x 4.0 A V RRM 50 V, 60 V I FSM 0 A E AS 0 mj V F at I F = 4 A 0.56 V T J max. 50 C TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters and polarity protection application. FEATURES Very low profile - typical height of. mm Ideal for automated placement Low forward voltage drop, low power losses High efficiency Low thermal resistance Meets MSL level, per J-STD-00, LF maximum peak of 60 C AEC-Q0 qualified Compliant to RoHS directive 00/95/EC and in accordance to WEEE 00/96/EC Halogen-free according to IEC definition MECHANICAL DATA Case: TO-77A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free and RoHS compliant, commercial grade Base P/NHM3 - halogen-free and RoHS compliant, automotive grade Terminals: Matte tin plated leads, solderable per J-STD-00 and JESD -B0 M3 suffix meets JESD 0 class A whisker test, HM3 suffix meets JESD 0 class whisker test MAXIMUM RATINGS (T A = 5 C unless otherwise noted) PARAMETER SYMBOL SS8P5C SS8P6C UNIT Device marking code S85C S86C Maximum repetitive peak reverse voltage V RRM V Maximum average forward rectified current (fig. ) total device per diode I F(AV) A Peak forward surge current 0 ms single half sine-wave superimposed on rated load per diode I FSM 0 A Non-repetitive avalanche energy at 5 C, I AS = A per diode E AS 0 mj Operating junction and storage temperature range T J, T STG - 55 to + 50 C Document Number: 8908 Revision: 4-Nov-09
2 ELECTRICAL CHARACTERISTICS (T A = 5 C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Instantaneous forward voltage per diode () Notes () Pulse test: 300 µs pulse width, % duty cycle () Pulse test: Pulse width 40 ms I F =.0 A I F = 4.0 A T A = 5 C I F =.0 A T I F = 4.0 A A = 5 C Reverse current per diode () T A = 5 C Rated V R T A = 5 C V F I R.5.6 Typical junction capacitance per diode 4.0 V, MHz C J 60 - pf V µa ma THERMAL CHARACTERISTICS (T A = 5 C unless otherwise noted) PARAMETER SYMBOL SS8P5C SS8P6C UNIT Typical thermal resistance per diode Note () Units mounted on recommended P.C.B. oz. pad layout R () θja 60 R θjl 3 C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACAGE CODE BASE QUANTITY DELIVERY MODE SS8P6C-M3/86A A 500 7" diameter plastic tape and reel SS8P6C-M3/87A A " diameter plastic tape and reel SS8P6CHM3/86A () A 500 7" diameter plastic tape and reel SS8P6CHM3/87A () A " diameter plastic tape and reel Note () Automotive grade Document Number: 8908 Revision: 4-Nov-09
3 Average Forward Rectified Current (A) Transient Thermal Impedance ( C/W) Junction Capacitance (pf) RATINGS AND CHARACTERISTICS CURVES (T A = 5 C unless otherwise noted) T L measured at the Cathode Band Terminal Resistive or Inductive Load Lead Temperature ( C) Figure. Maximum Forward Current Derating Curve Instantaneous Reverse Current (µa) T A = 50 C 000 T A = 5 C 00 0 T A = 5 C Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Leakage Characteristics Per Diode Average Power Loss (W) D = 0.3 D = 0.5 D = 0.8 D = 0. D = 0. D =.0 T D = t p /T t p T J = 5 C f =.0 MHz V sig = 50 mvp-p Average Forward Current (A) Figure. Forward Power Loss Characteristics Per Diode Reverse Voltage (V) Figure 5. Typical Junction Capacitance Per Diode Instantaneous Forward Current (A) 0 0. T A = 5 C T A = 50 C T A = 5 C 0 Junction to Ambient Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode t - Pulse Duration (s) Figure 6. Typical Transient Thermal Impedance Per Diode Document Number: 8908 Revision: 4-Nov-09 3
4 PACAGE OUTLINE DIMENSIONS in inches (millimeters) TO-77A (SMPC) 0.87 (4.75) 0.75 (4.45) 0.06 (0.40) (0.5) 0.6 (6.65) 0.50 (6.35) 0.4 (6.5) 0.38 (6.05) 0.7 (4.35) 0.67 (4.5) (.0) (.00) 0.46 (3.70) 0.34 (3.40) (.0) (.90) Mounting Pad Layout 0.89 (4.80) 0.89 (4.80) 0.73 (4.40) 0.55 (3.94) NOM (6.80) 0.86 (4.7) (0.75) NOM (.4) (0.94) (.3) NOM (.35) 0.04 (.05) Conform to JEDEC TO-77A 0.04 (.04) (.7) (.40) 4 Document Number: 8908 Revision: 4-Nov-09
5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9000 Revision: 8-Jul-08
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