Dual High-Voltage Trench MOS Barrier Schottky Rectifier
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1 V60D0C-M3, V60D0CHM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.36 V at I F = 5 A 2 TMBS esmp Series Top View K PIN V60D0C Bottom View K FEATURES Trench MOS Schottky technology Very low profile - typical height of.7 mm Ideal for automated placement Low forward voltage drop, low power losses High efficiency operation Meets MSL level, per J-STD-0, LF maximum peak of 260 C AEC-Q qualified available: - Automotive ordering code: base P/NHM3 Material categorization: for definitions of compliance please see PIN 2 HEATSINK PRIMARY CHARACTERISTICS I F(AV) 2 x 30 A V RRM 0 V I FSM 3 A V F at I F = 30 A (T A = 25 C) 0.66 V T J max. 50 C Package Diode variations Dual common cathode TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, inductrial, and automotive application. MECHANICAL DATA Case: Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B2 M3 and HM3 suffix meets JESD class 2 whisker test Polarity: As marked MAXIMUM RATINGS ( unless otherwise noted) PARAMETER SYMBOL V60D0C UNIT Maximum repetitive peak reverse voltage V RRM 0 V Maximum average forward rectified current (fig. ) per device 60 I F(AV) per diode 30 Peak forward surge current ms single half sine-wave superimposed on rated load I FSM 3 A Voltage rate of change (rated V R ) dv/dt 000 V/μs Operating junction and storage temperature range T J, T STG -40 to +50 C A Revision: 28-Mar-5 Document Number: 87952
2 V60D0C-M3, V60D0CHM3 ELECTRICAL CHARACTERISTICS ( unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I F = 5 A I F = 5 A Instantaneous forward voltage per diode I F = 30 A I F = 5 A V () F V I F = 5 A T A = 25 C I F = 30 A Reverse current at rated V R per diode V R = 70 V T A = 25 C 2 - μa - ma V R = 0 V I (2) R - 00 μa T A = 25 C ma Notes () Pulse test: 300 μs pulse width, % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS ( unless otherwise noted) PARAMETER SYMBOL V60D0C UNIT Typical thermal resistance per diode R JC.8 per device R JC 0.95 per device R (2) JM 3 per device R ()(2) JA 45 Notes () The heat generated must be less than the thermal conductivity from junction-to-ambient: dp D /dt J < /R JA (2) Free air, without heatsink; thermal resistance R JA - junction to ambient; thermal resistance R JM - junction to mount C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE V60D0C-M3/I 0.55 I 00/reel 3" diameter plastic tape and reel V60D0CHM3/I () 0.55 I 00/reel 3" diameter plastic tape and reel Note () AEC-Q qualified Revision: 28-Mar-5 2 Document Number: 87952
3 V60D0C-M3, V60D0CHM3 RATINGS AND CHARACTERISTICS CURVES ( unless otherwise noted) Average Forward Rectified Current (A) R thja = 45 C/W R thjc = 0.95 C/W Case Temperature ( C) Instantaneous Reverse Current (ma) 00 0 T A = 50 C T A = 25 C T A = 0 C Percent of Rated Peak Reverse Voltage (%) Fig. - Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics Per Diode Average Power Loss (W) D = 0. D = 0.2 D = 0.3 D = 0.5 D = 0.8 D = t p /T Average Forward Current (A) D =.0 Fig. 2 - Forward Power Loss Characteristics Per Diode T t p Junction Capacitance (pf) Reverse Voltage (V) T J = 25 C f =.0 MHz V sig = 50 mv p-p Fig. 5 - Typical Junction Capacitance Per Diode Instantaneous Forward Current (A) 0 T A = 50 C T A = 25 C T A = 0 C Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Transient Thermal Impedance ( C/W) 0 Junction to Ambient t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Per Device Revision: 28-Mar-5 3 Document Number: 87952
4 V60D0C-M3, V60D0CHM3 Thermal Resistance ( C/W) Epoxy printed circiut board FR4 copper thickness = 70 μm Copper Pad Areas (cm 2 ) S(cm 2 ) Fig. 7 - Thermal Resistance Junction-to-Ambient vs. Copper Pad Areas PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Mounting Pad Layout Revision: 28-Mar-5 4 Document Number: 87952
5 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 7 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-7 Document Number: 900
FEATURES. PARAMETER SYMBOL V8PAM10 UNIT Device marking code Maximum repetitive peak reverse voltage V RRM 100 V
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