Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.36 V at I F = 5 A

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1 Dual HighVoltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.36 V at I F = 5 A TO2AB 2 3 V6000C PIN PIN 2 PIN 3 CASE TMBS TO263AB 2 VB6000C PIN PIN 2 HEATSIN FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Meets MSL level, per JSTD0, LF maximum peak of 245 C (for TO263AB package) Solder dip 260 C, 40 s (for TO2AB) Component in accordance to RoHS 02/95/EC and WEEE 02/96/EC PRIMARY CHARACTERISTICS I F(AV) 2 x A V RRM 00 V I FSM 3 A V F at I F = A 0.66 V T J max. 50 C TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, ORing diode, dctodc converters and reverse battery protection. MECHANICAL DATA Case: TO2AB and TO263AB Epoxy meets UL 94V0 flammability rating Terminals: Matte tin plated leads, solderable per JSTD002 and JESD22B02 E3 suffix for commercial grade, meets JESD class A whisker test Polarity: As marked Mounting Torque: 0 inlbs Maximum MAXIMUM RATINGS ( unless otherwise noted) PARAMETER SYMBOL V6000C VB6000C UNIT Maximum repetitive peak reverse voltage V RRM 00 V Maximum average forward rectified current (Fig. ) per device per diode I F(AV) Peak forward surge current 8.3 ms single half per diode I sinewave superimposed on rated load FSM 3 Operating junction and storage temperature range T J, T STG 40 to + 50 C 60 A Revision: 6Jan08

2 Average Power Loss (W) ELECTRICAL CHARACTERISTICS ( unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I R =.0 ma V BR 00 (minimum) Instantaneous forward voltage per diode () I F = 5 A I F = 0 A I F = 5 A I F = A I F = A I F = 5 A I F = 0 A I F = 5 A I F = A I F = A V F V Reverse current at rated V RM per diode (2) V R = 80 V V R = 00 V I R µa ma µa ma Notes: () Pulse test: 0 µs pulse width, % duty cycle (2) Pulse test: 0 ms pulse width THERMAL CHARACTERISTICS ( unless otherwise noted) PARAMETER SYMBOL V6000C VB6000C UNIT Typical thermal resistance per diode R θjc C/W ORDERING INFORMATION PACAGE PREFERRED P/N UNIT WEIGHT (g) PACAGE CODE BASE QUANTITY DELIVERY MODE TO2AB V6000CE3/4W.89 4W 50/tube Tube TO263AB VB6000CE3/4W.38 4W 50/tube Tube TO263AB VB6000CE3/8W.38 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES ( unless otherwise noted) Average Forward Current (A) Resistive or Inductive Load D = 0. D = 0.2 D = 0.3 D = 0.8 D = 0.5 D =.0 T D = t p /T t p Case Temperature ( C) Figure. Forward Current Derating Curve Average Forward Current (A) Figure 2. Forward Power Loss Characteristics Per Diode 2 Revision: 6Jan08

3 Instantaneous Forward Current (A) Transient Thermal Impedance ( C/W) 00 0 T A = 50 C T A = 00 C Junction Capacitance (pf) T J = 25 C f =.0 MHz V sig = 50 mvpp Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Reverse Voltage (V) Figure 5. Typical Junction Capacitance Per Diode 00 0 Instantaneous Reverse Current (ma) 0 T A = 50 C T A = 00 C Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Characteristics Per Diode t Pulse Duration (s) Figure 6. Typical Transient Thermal Impedance Per Diode Revision: 6Jan08 3

4 PACAGE OUTLINE DIMENSIONS in inches (millimeters) 0.45 (0.54) MAX. TO2AB (9.40) (9.4) 0.54 (3.9) 0.48 (3.74) 0.3 (2.87) 0.03 (2.62) 0.85 (4.70) 0.75 (4.44) (.39) (.4) 0.60 (4.06) 0.40 (3.56) (.45) (.4) 0.05 (2.67) (2.4) PIN (6.3) (5.87) (0.90) (0.70) 0.04 (2.65) (2.45) 0.5 (5.) 0.95 (4.95) 0.45 (3.68) 0.35 (3.43) (8.89) 0.3 (8.38).48 (29.6).8 (28.40) (4.22) 0.5 (3.46) (0.56) 0.04 (0.36) (5.32) (4.55) 0.0 (2.79) 0.00 (2.54) TO263AB 0.4 (0.45) (9.65) (6.22) MIN (4.83) 0.60 (4.06) (.40) (.4) Mounting Pad Layout 0.42 (0.66) MIN (9.4) 0.3 (8.3) (0.940) (0.686) 0.05 (2.67) (2.4) (5.85) 0.59 (5.00) 0.5 (5.) 0.95 (4.95) (.40) (.9) 0 to 0.0 (0 to 0.254) 0.0 (2.79) (2.29) 0.02 (0.53) 0.04 (0.36) 0.40 (3.56) 0.0 (2.79) (7.02) 0.59 (5.00) 0.08 (2.032) MIN (2.67) (2.4) 0.33 (8.38) MIN. 0.5 (3.8) MIN. 4 Revision: 6Jan08

5 Notice Legal Disclaimer Notice Vishay Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, lifesaving, or lifesustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 9000 Revision: 08Apr05

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = V at I F = 10 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = V at I F = 10 A New Product V8P Dual HighVoltage Trench MOS Barrier Schottky Rectifier Ultra Low V F =.425 V at I F = A TO247AD (TO3P) PIN PIN 3 PIN 2 CASE 3 2 MAJOR RATINGS AND CHARACTERISTICS I F(AV) 8 A V RRM V I FSM