LDMOS Power Amplifiers for 23 cm 150 W to 1 kw
|
|
|
- Darleen Neal
- 6 years ago
- Views:
Transcription
1 LDMOS Power Amplifiers for 23 cm 150 W to 1 kw Wolf-Henning Rech DF9IC Eisinger Str. 36/2 D Neulingen Germany JN48iw
2 LDMOS: full legal power? Popular LDMOS amplifier modules (pallets): 144 MHz: 1 kw LDMOS MRFE6VP61K MHz: 500 W MRFE6VP MHz: 150 W 2 x MRF286 MMRT 2015 Wolf-Henning Rech DF9IC 2
3 Pallets without a shielding box OK for a prototype but not for a product MMRT 2015 Wolf-Henning Rech DF9IC 3
4 PAs based on such pallets Imperfectly shielded outer enclosures MMRT 2015 Wolf-Henning Rech DF9IC 4
5 Module concept Use of a cheap shielding box, to be integrated with a large heat spreader Low cost LDMOS surplus transistors (from cellular, not broadcast market) Expensive components only where really needed (but reliable design nevertheless) MMRT 2015 Wolf-Henning Rech DF9IC 5
6 Concept of the box Transistor is installed on a copper heat spreader Frame and cover from tin plated material (possibly joint with the heat spreader) PCB fixed with screws to the copper and soldered to the tin plate frame MMRT 2015 Wolf-Henning Rech DF9IC 6
7 Concept of the box Two separate PCBs for input and output circuits As few through-holes as possible MMRT 2015 Wolf-Henning Rech DF9IC 7
8 High-current feedthrough Feedthrough capacitors for A MMRT 2015 Wolf-Henning Rech DF9IC 8
9 Which transistors for 1296 MHz? Cellular transistors for 900 MHz 60 W: MFR9060, MRF6S9060, MRF286 etc. (without internal pre-matching) Broadcast/ISM transistors for 1300/1400 MHz (internally pre-matched): PTF141501E 150 W 28 V BLF6G13L-250P 250 W 50 V Cellular transistors for 900 MHz W: MRFE6S9125, MRFE6S9135, MRFE6S9160 (only pre-matched at the input) MMRT 2015 Wolf-Henning Rech DF9IC 9
10 My prefered 23 cm PA transistor MMRT 2015 Wolf-Henning Rech DF9IC 10
11 MRFE6S9160HS 10 EUR MMRT 2015 Wolf-Henning Rech DF9IC 11
12 PA 1296 MHz: the prototype Let s try it! With sucess: 150 W output power at db gain MMRT 2015 Wolf-Henning Rech DF9IC 12
13 PA 1296 MHz: push-pull? Experiment of a push-pull amplifier: Poor result: assymetric behaviour, low efficiency. MMRT 2015 Wolf-Henning Rech DF9IC 13
14 PA 1296 MHz: MRFE6S9160 Design of an amplifier without through-holes close to the transistor: Result: similar to the first prototype, but critical contacts at the PCB edges MMRT 2015 Wolf-Henning Rech DF9IC 14
15 PA 1296 MHz: MRFE6S9160 Soldering of the transistor to the heat spreader: first trials with tin-lead solder MMRT 2015 Wolf-Henning Rech DF9IC 15
16 PA 1296 MHz: MRFE6S9160 Result: this process was working, but caused several failures too (transistors had reduced transconductance) Then: use of a low temperature SMD solder paste C Edsyn CR11 Sn42Bi58 (tin bismuth) Slowly heating and cooling the pallets => no more failures (from 20 transistors)! MMRT 2015 Wolf-Henning Rech DF9IC 16
17 PA 1 x MRFE6S9160 RO4003 Design verification with 4 new prototypes all achieve >150 W at 28 V MMRT 2015 Wolf-Henning Rech DF9IC 17
18 PA 1 x MRFE6S9160 RO4003 Duko 100n 5,1V 1k 1n 0805 NP0 1n 0805 NP0 1n 0805 NP0 1n 0805 NP0 100µF 63V Duko +28 V TX max. 10 ma 2,7k +28 V max. 12 A RF in 47p 0805 NP0 2,2p 0805 NP0 8,2p ATC600S 5p Murata TZ k2 6 x 3,3p ATC100B 2 x 47p ATC600S RF out MRFE6S9160 MMRT 2015 Wolf-Henning Rech DF9IC 18
19 PA 1 x MRFE6S9160 RO nF 1nF 1nF 1nF 1nF 5,1V Zener 2,2p 100p 47 2,2k ATC600S 8,2pF ATC100B 3 x 3,3pF ATC100B 3 x 3,3pF ATC100B 3,3pF (Startwert) ATC600S 2 x 47pF 100µF 63V 2,7k 1k Poti 45 mm auf 6mm Dorn 45 mm auf 6mm Dorn 5pF MMRT 2015 Wolf-Henning Rech DF9IC 19
20 PA 1 x MRFE6S9160 RO4003 MRFE6S MHz , , ,0 Power / W ,0 PAE / % , ,0 0 0,0 0 0,5 1 1,5 2 2,5 Drive power / W Output Power DC input Efficiency (PAE) / % MMRT 2015 Wolf-Henning Rech DF9IC 20
21 PA 1 x MRFE6S9160 FR4 Another experiment on 1.5 mm FR4 substrate, as RO4003 is difficult to buy in small quantities The result is lower output power and reduced efficiency MMRT 2015 Wolf-Henning Rech DF9IC 21
22 PA 1 x MRFE6S9160 FR4 MRFE6S MHz , , ,0 Power / W ,0 PAE / % , ,0 Output Power DC Input 0 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 1,8 2 0,0 Efficiency (PAE) / % Drive Power / W MMRT 2015 Wolf-Henning Rech DF9IC 22
23 PA 2 x MRFE6S9160 RO4003 Next stage: coupling of two amplifiers MMRT 2015 Wolf-Henning Rech DF9IC 23
24 PA 1296 MHz: 2 x MRFE6S9160 Prototype of the twin amplifier MMRT 2015 Wolf-Henning Rech DF9IC 24
25 PA 1296 MHz: 2 x MRFE6S9160 MMRT 2015 Wolf-Henning Rech DF9IC 25
26 PA 1296 MHz: 2 x MRFE6S9160 Result: success, nearly 300 W at 28 V, efficiency and gain bit lower than for the single amplifier Adjustment procedure: first supply and adjust each transistor single (resulting in 6 db less gain and 3 db less power than in a single amplifier); e. g. 5 W to 70 W then only minor fine adjustment necessary for the joint operation (expect 5 W to 280 W then, according to the above example) Next step: try to make PCB smaller and module simplier to build MMRT 2015 Wolf-Henning Rech DF9IC 26
27 PA 1296 MHz: 2 x MRFE6S9160 MMRT 2015 Wolf-Henning Rech DF9IC 27
28 PA 1296 MHz: 2 x MRFE6S9160 MMRT 2015 Wolf-Henning Rech DF9IC 28
29 PA 1296 MHz: 2 x MRFE6S9160 MMRT 2015 Wolf-Henning Rech DF9IC 29
30 PA 1296 MHz: 2 x MRFE6S9160 MMRT 2015 Wolf-Henning Rech DF9IC 30
31 PA 1296 MHz: 2 x MRFE6S9160 MMRT 2015 Wolf-Henning Rech DF9IC 31
32 PA 1296 MHz: 2 x MRFE6S9160 MMRT 2015 Wolf-Henning Rech DF9IC 32
33 PA 1296 MHz: 2 x MRFE6S9160 Use an isolator in the input during test and optimization MMRT 2015 Wolf-Henning Rech DF9IC 33
34 PA 1296 MHz: 2 x MRFE6S x MRFE6S MHz , , ,0 Power / W ,0 PAE / % , ,0 0 0, Drive Power / W Output Power DC Input Efficiency (PAE) / % MMRT 2015 Wolf-Henning Rech DF9IC 34
35 PA 1296 MHz: 2 x MRFE6S9160 Result: Small high-power boxed amplifier module 275 W at 26 V 305 W at 28 V 340 W at 30,6 V 17 db gain >50% efficiency Adjustment more difficult than with single transistor module For bigger PAs I prefer to combine twin modules externally MMRT 2015 Wolf-Henning Rech DF9IC 35
36 F5JWF: 4 x MRFE6S9160 Based on the single transistor amp Couplers and total design by Philippe F5JWF MMRT 2015 Wolf-Henning Rech DF9IC 36
37 F5JWF: 4 x MRFE6S9160 Efficient water cooling P sat >600 W Philippe plans to mount two modules behind his dish feed for EME MMRT 2015 Wolf-Henning Rech DF9IC 37
38 How to make 1 kw on 1296? MMRT 2015 Wolf-Henning Rech DF9IC 38
39 PA 1296 MHz: 8 x MRFE6S modules Input: Wilkinson coupler on FR4 Output: isolators + non-isolated coupler (antenna combiner) MMRT 2015 Wolf-Henning Rech DF9IC 39
40 PSU 28 V >100 A PSU and DC filtering has to be investigated MMRT 2015 Wolf-Henning Rech DF9IC 40
41 Conclusion Concept of a 150 W 1296 MHz power amplifier module with a bill of material cost <30 GBP PA with 2 transistors in a box with printed couplers (min. 250 W for 60 GBP BOM) Higher power by combining multiple modules 1 kw demonstrated MMRT 2015 Wolf-Henning Rech DF9IC 41
Components for modular microwave transverters. Wolf-Henning Rech DF9IC in JN48iw
Components for modular microwave transverters Wolf-Henning Rech DF9IC in JN48iw http://www.df9ic.de Content Multiband transverter systems Filters and multiplexers PLL-disciplined oscillators Transverters
Low Pass Filter (rev 5) for single and 2-Pallet HF Amplifiers The filter sections on this board differ from the web article, and offer some
The filter sections on this board differ from the web article, and offer some improvement in performance, including raising the maximum power handling capacity. The most significant changes were to the
Compact 50 MHz High Power Solid State Amplifier using MRFE6VP61K25H
Compact 50 MHz High Power Solid State Amplifier using MRFE6VP61K25H By F5FLN Michel ROUSSELET and F1TE Lucien SERRANO, F6BKI Jacques RAMBAUD November 2011 Rev1 This Article deals with RF amplifier design
MHz (FM BAND) 50 Volts Input/output 50 ohms Pout: 1250W minimum Up to 85% efficiency 22dB Gain NXP MRF1K50 Mosfet Planar RF Transformers
Model MRF1K50-PLA FM Pallet Amplifier This amplifier module is ideal for final output stages in FM Broadcast Applications. 87.5 108.1MHz (FM BAND) 50 Volts Input/output 50 ohms Pout: 1250W minimum Up to
MHz (FM BAND) 50 Volts Input/output 50 ohms Pout: 1000W minimum Up to 85% efficiency 24dB Gain NXP BLF188XR Mosfet Planar RF Transformers
Model P1000FM-188PLA FM Pallet Amplifier This amplifier module is ideal for final output stages in FM Broadcast Applications. 87.5 108.1MHz (FM BAND) 50 Volts Input/output 50 ohms Pout: 1000W minimum Up
Broadcast Concepts Inc NW 102 Road Suite 4 Medley FL Tel: : Fax Model P50FM42MH-SMA2 FM Pallet Amplifier Module
Model P50FM42MH-SMA2 FM Pallet Amplifier Module This amplifier module is ideal for driver stages in FM Broadcast transmitters. 86 110MHz 28Volts Pout: 50W CW minimum 40dB Gain Class AB MACOM MRF173 Mosfet
3dB HYBRID COUPLER. Amplitude Balance db (max) ± ± to +85
FEATURES High Power Low Profile Surface Mount Package Very Low Insertion Loss Excellent Amplitude and Phase Balance High Isolation RoHS Tape and Reel for High Volume Production APPLICATIONS Power Amplifiers
Directional Couplers / SWR detectors for 145MHz - 435MHz. Easily and cheaply made. pa0nhc. Ver. E4;
1 of 9 12/1/2008 9:46 PM
MHz (FM BAND) 50 Volts Input/output 50 ohms Pout: 1000W minimum 78% 23dB Gain NXP BLF184XR Mosfet
Model P600FM-184XR FM Pallet Amplifier This amplifier module is ideal for final output stages in FM Broadcast Applications. 87.5 108.1MHz (FM BAND) 50 Volts Input/output 50 ohms Pout: 1000W minimum 78%
Spectrian 2304 MHz SSPA. Garry C. Hess, K3SIW June 11, 2004
Spectrian 2304 MHz SSPA Garry C. Hess, K3SIW June 11, 2004 A solid-state power amplifier (SSPA) manufactured by Spectrian can produce on the order of 200 W linear output 1 at 2304 MHz with little modification.
REAL Solid State Power at VHF / UHF
REAL Solid State Power at VHF / UHF Barry Malowanchuk VE4MA Microwave Update Conference, October 2012 1 REAL Solid State Power at VHF/ UHF New Power Transistor Technology Replacements for 2 x 4CX250 s
An Improved 2 x MRF286 Power Amplifier for 1296 MHz Barry Malowanchuk VE4MA
An Improved 2 x MRF286 Power Amplifier for 1296 MHz Barry Malowanchuk VE4MA An Improved 2 x MRF286 Power Amplifier for 1296 MHz Much use of XRF286 transistors on 23 cm One and 2 Transistor Designs Producing
Compact 432 MHz 1 kw High Power Solid State Amplifier using 2 x MRF6VP5600H
Compact 432 MHz 1 kw High Power Solid State Amplifier using 2 x MRF6VP5600H By F5FLN Michel ROUSSELET With the help of Remco den Besten PA3FYM January 2012 Rev2 This article describes an RF amplifier design
Discrete Op-Amp Kit MitchElectronics 2019
Discrete Op-Amp Kit MitchElectronics 2019 www.mitchelectronics.co.uk CONTENTS Introduction 3 Schematic 4 How It Works 5 Materials 9 Construction 10 Important Information 11 Page 2 INTRODUCTION Even if
NEW DESIGN***DEM Part Number FRS***NEW DESIGN Low power 144 MHz Transverter for the Flex Radio System SDR-1000 Operating Specifications:
NEW DESIGN***DEM Part Number 144-28FRS***NEW DESIGN Low power 144 MHz Transverter for the Flex Radio System SDR-1000 Operating Specifications: Operating Voltage: 12.0-15.5 VDC, 13.8 nominal Current Drain:
Application Note 5480
ALM-2712 Ultra Low-Noise GPS Amplifier with Pre- and Post-Filter Application Note 548 Introduction The ALM-2712 is a GPS front-end module which consists of a low noise amplifier with pre- and post-filters.
PTFC270051M. High Power RF LDMOS Field Effect Transistor 5 W, 28 V, MHz. Description. Features. RF Characteristics, 2170 MHz
c271m-gr1.3 High Power RF LDMOS Field Effect Transistor W, 28 V, 9 27 MHz Description The is an unmatched -watt LDMOS FET suitable for power amplifier applications with frequencies from 9 MHz to 27 MHz.
With these 2 sections option we try to get the most out of your LD Mosfet Transistor.
LPF 2M 1KW+ LDMOS LPF 2M 1KW+ LDMOS is an 1KW+ Filter, developed for use with the latest generation High Power LD Mosfet transistors. These extreme high power semiconductors have very high gain and often
***note: pallet may draw up to 5.0 amps on a 32V supply.
Model BCI-UHF-40TX12 TV Pallet Amplifier Module This amplifier module is ideal for final output stages in analog and digital TV broadcast equipment. 470 860MHz 28-32 Volts Pout: 25W Peak Sync. 10Watts
TECHNICAL REPORT: CVEL Parasitic Inductance Cancellation for Filtering to Chassis Ground Using Surface Mount Capacitors
TECHNICAL REPORT: CVEL-14-059 Parasitic Inductance Cancellation for Filtering to Chassis Ground Using Surface Mount Capacitors Andrew J. McDowell and Dr. Todd H. Hubing Clemson University April 30, 2014
With these 2 sections option we try to get the most out of your LD Mosfet Transistor.
LPF 6M 1KW+ LDMOS LPF 6M 1KW+ LDMOS is an 1KW+ Filter, developed for use with the latest generation High Power LD Mosfet transistors. These extreme high power semiconductors have very high gain and often
Alcatel White Box 24GHz Transceiver experiments and modifications
Alcatel White Box 24GHz Transceiver experiments and modifications A set of working notes, measurements and comments PSU Need to supply : -5V up to ~ 30mA for Rx and PA modules +5.2V 1A for Rx and Tx mixer
Application Note No. 158
Application Note, Rev. 1.2, February 2008 Application Note No. 158 The BFP420 Transistor as a Low-Cost 900 MHz ISM Band Power Amplifier RF & Protection Devices Edition 2008-02-27 Published by Infineon
PA FAN PLATE ASSEMBLY 188D6127G1 SYMBOL PART NO. DESCRIPTION. 4 SBS /10 Spring nut. 5 19A702339P510 Screw, thread forming, flat head.
MAINTENANCE MANUAL 851-870 MHz, 110 WATT POWER AMPLIFIER 19D902797G5 TABLE OF CONTENTS Page DESCRIPTION.............................................. Front Page SPECIFICATIONS.................................................
The 15 meter section was moved
After 2 years or so making various adjustments to the original LPF filter configuration, and noting some of the changes which could be made to the board to make it easier to construct, tune, and reconfigure
Schottky diode mixer for 5.8 GHz radar sensor
AN_1808_PL32_1809_130625 Schottky diode mixer for 5.8 GHz radar sensor About this document Scope and purpose This application note shows a single balanced mixer for 5.8 GHz Doppler radar applications with
Agenda 1. AML Amplifier Modification 2. MicroTik mmw Digital Link 3. Hints and Kinks
Agenda 1. AML Amplifier Modification 2. MicroTik mmw Digital Link 3. Hints and Kinks Greg McIntire, AA5C AA5C@arrl.net November 3, 2018 WWW..ORG 1 AML Amplifier - 1 Surplus Brick Amplifier designed for
CGH40120P. 120 W, RF Power GaN HEMT FEATURES APPLICATIONS
Rev 3.1 - November 2017 CGH40120P 120 W, RF Power GaN HEMT Cree s CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail,
Efficiency: 68% Temperature Range: +0 to 60 C Max VSWR: 5:1. Class: Supply Voltage:
Part Number Revision 2.C Release Date July 11 2007 Revision Notes - updated new format Amplifier Name Technical Specifications Summary Frequency Range: P1dB: Class: Supply Voltage: 88-108 MHz 750 Watts
Conversion of a Marconi Blue Cap LNB into a 3cms 30-50mW Tx.
Conversion of a Marconi Blue Cap LNB into a 3cms 30-50mW Tx. These mods. are based on the article by Bob Platts, G8OZP, in CQ-TV 181 P64-68. In this variation the various bias voltages are generated from
IMD Shoulder (dbc) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF LDMOS FETs 250 W, 50 V, 470 806 MHz Description The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806
HMC639ST89 / 639ST89E
v3.1 HMC63ST / 63STE AMPLIFIER,.2-4. GHz Typical Applications The HMC63ST(E) is ideal for: Cellular / PCS / 3G WiMAX, WiBro, & Fixed Wireless CATV & Cable Modem Microwave Radio IF and RF Sections Features
Drain Efficiency (%) c270101m-2.1-gr1c. Characteristic Symbol Min Typ Max Unit
c2711m-2.1-gr1c High Power RF LDMOS Field Effect Transistor 1 W, 28 V, 9 27 MHz Description The is an unmatched 1-watt LDMOS FET suitable for power amplifier applications with frequencies from 9 MHz to
Handbook / Kit. DB 6 NT 5,7 GHz Transverter MK DB 6 NT
Handbook / Kit DB 6 NT 5,7 GHz Transverter MK2 4.2003 DB 6 NT 5,7 GHz Transverter MK2 DB6NT 4.2003 3. Generation Indroduction In 1977 the DUBUS magazine published the first 5,7GHz SSB transverter which
Efficiency (%) c261402fc_gr1. Adjacent Channel Power Ratio ACPR dbc All published data at T CASE = 25 C unless otherwise indicated
c26142fc_gr1 Thermally-Enhanced High Power RF LDMOS FET 14 W, 28 V, 26 269 MHz Description The is a 14-watt LDMOS FET intended for use in multi-standard cellular power amplifi er applications in the 26
Application Note 5499
MGA-31389 and MGA-31489 High-Gain Driver Amplifier Using Avago MGA-31389 and MGA-31489 Application Note 5499 Introduction The MGA-31389 and MGA-31489 from Avago Technologies are.1 Watt flat-gain driver
MAINTENANCE MANUAL MHz, 100 WATT POWER AMPLIFIER 19D901841G3
MAINTENANCE MANUAL 851-870 MHz, 100 WATT POWER AMPLIFIER 19D901841G3 TABLE OF CONTENTS SPECIFICATIONS............................................... Front Cover DESCRIPTION.................................................
HMC639ST89 / 639ST89E
Typical Applications The HMC39ST9(E) is ideal for: Cellular / PCS / 3G WiMAX, WiBro, & Fixed Wireless CATV & Cable Modem Microwave Radio IF and RF Sections Functional Diagram Electrical Specifications,
A 3 Watt LDMOS Driver for the 432MHz band
A 3 Watt LDMOS Driver for the 432MHz band John C Worsnop. PhD CEng MIET, G4BAO Introduction The popularity of my 2.5-Watt driver kit for the 1296MHz band (1) and the recent publication of G4DDK s Iceni
Application Note No. 149
Application Note, Rev. 1.2, February 2008 1.8 V, 2.6 ma Low Noise Amplifier for 1575 MHz GPS L1 Frequency with the BFP405 RF Transistor Small Signal Discretes Edition 2008-02-22 Published by Infineon Technologies
PowerAmp Design. PowerAmp Design PAD135 COMPACT HIGH VOLATGE OP AMP
PowerAmp Design COMPACT HIGH VOLTAGE OP AMP Rev G KEY FEATURES LOW COST SMALL SIZE 40mm SQUARE HIGH VOLTAGE 200 VOLTS HIGH OUTPUT CURRENT 10A PEAK 40 WATT DISSIPATION CAPABILITY 200V/µS SLEW RATE APPLICATIONS
OnBoard SMD GSM/UMTS antenna
Page 1 Rev 2.5 Not recommended for new designs. Replaced by PRO-OB-572. and implementation guideline OnBoard SMD GSM/UMTS antenna Patent: SE537042 + Pending Page 2 Rev 2.5 Table of contents 1. General...
Drain Efficiency (%) b092707fh-gr1a. Characteristic Symbol Min Typ Max Unit
b9277fh-gr1a PTFB9277FH Thermally-Enhanced High Power RF LDMOS FET 27 W, 28 V, 925 96 MHz Description The PTFB9277FH is a 27-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications
APPLICATION NOTE FOR PA.710A ANTENNA INTEGRATION
APPLICATION NOTE FOR PA.710A ANTENNA INTEGRATION APN-11-8-001/B Page 1 of 22 1. TABLE OF CONTENTS 1. TABLE OF CONTENTS... 2 2. BASICS... 4 3. APPLICATIONS... 5 4. IMPEDANCE... 5 5. BANDWIDTH... 5 6. GAIN...
MAINTENANCE MANUAL MHz, 100 WATT POWER AMPLIFIER 19D901841G2
D MAINTENANCE MANUAL 851-870 MHz, 100 WATT POWER AMPLIFIER 19D901841G2 TABLE OF CONTENTS Page DESCRIPTION................................................ Front Cover CIRCUIT ANALYSIS.............................................
MAINTENANCE MANUAL MHz, 100 WATT POWER AMPLIFIER 19D901841G3
A MAINTENANCE MANUAL 851-870 MHz, 100 WATT POWER AMPLIFIER 19D901841G3 TABLE OF CONTENTS SPECIFICATIONS............................................... Front Cover DESCRIPTION.................................................
Efficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF LDMOS FET 2 W, 48, 746 821 MHz Description The PTA0827NF is a 2-watt LDMOS FET manufactured with Wolfspeed's 48- LDMOS process. It is designed for use in multi-standard
RFM XR. 2-30MHz 500W Class AB Linear High Performance Amplifier. Maximum Ratings Operation beyond these ratings will void warranty.
Class AB 500W XR-rated linear amplifier 2-30MHz bandwidth 27dB typical gain 64% typical efficiency +/- 1.1dB typical gain flatness Temperature-compensated bias TTL disable The RFP2-30-500XR is an XR-rated
CGH40006P. 6 W, RF Power GaN HEMT APPLICATIONS FEATURES
Rev 3. May 15 CGHP W, RF Power GaN HEMT Cree s CGHP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHP, operating from a volt rail, offers a general purpose, broadband
Application Note No. 124
Application Note, Rev. 1.2, September 2007 Low Noise Amplifier for 2.3 to 2.5 GHz Applications using the SiGe BFP640F Tranistor Small Signal Discretes Edition 2007-09-06 Published by Infineon Technologies
Gain and Return Loss vs Frequency. s22. Frequency (GHz)
SBA4086Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-86 Product Description RFMD s SBA4086Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington
APPLICATION NOTE FOR PA.710.A ANTENNA INTEGRATION
APPLICATION NOTE FOR PA.710.A ANTENNA INTEGRATION APN-13-8-005/B/NB Page 1 of 17 1. TABLE OF CONTENTS 1. TABLE OF CONTENTS... 2 2. BASICS... 3 3. APPLICATIONS... 4 4. IMPEDANCE... 4 5. BANDWIDTH... 4 6.
ELECTRIC GENERAL. MAINTENANCE MANUAL MHz, 35 WATT POWER AMPLIFIER ASSEMBLY 19D430488G1, 2 DESCRIPTION CIRCUIT ANALYSIS
MAINTENANCE MANUAL 851-870 MHz, 35 WATT POWER AMPLIFIER ASSEMBLY 19D430488G1, 2 DESCRIPTION The power amplifier assembly for MASTR II uses six RF power transistors to provide a maximum of 35 Watts output
Application Note 5460
MGA-89 High Linearity Amplifier with Low Operating Current for 9 MHz to. GHz Applications Application Note 6 Introduction The Avago MGA-89 is a high dynamic range amplifier designed for applications in
Types MCM and MIN SMT Clad RF Capacitors
Multilayer High Power, High Temperature Mica and PTFE Capacitors Specifications actual size Capacitance Range: Voltage Ratings: Temperature Range: Capacitance Tolerance: Dielectric Strength: Insulation
Assembly Instructions for the FRB FET FM 70 Watt Amp
Assembly Instructions for the FRB FET FM 70 Watt Amp 1.) Orient the circuit board with the diagram 2.) Use a narrow chisel tip 25-30 watt soldering iron for assembly 3.) All the small parts are taped onto
Efficiency (%) c201202fc-v2-gr1a. Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
c12fc-v2-gr1a PXAC12FC Thermally-Enhanced High Power RF LDMOS FET 1 W, 28 V, 18 2 MHz Description The PXAC12FC is a 1-watt LDMOS FET for use in multistandard cellular power amplifier applications in the
1 FUNCTIONAL DESCRIPTION WAY SPLITTER/INPUT BOARD FET RF AMPLIFIERS WAY POWER COMBINER VSWR CONTROL BOARD...
CONTENTS 1 FUNCTIONAL DESCRIPTION...1 2 4-WAY SPLITTER/INPUT BOARD...2 3 FET RF AMPLIFIERS...3 4 4-WAY POWER COMBINER...4 5 VSWR CONTROL BOARD...5 6 ADJUSTMENT OF BIAS VOLTAGE TO ESTABLISH PROPER QUIESCENT
PTFC270101M. High Power RF LDMOS Field Effect Transistor 10 W, 28 V, MHz. Description. Features. RF Characteristics
c271m-2.1-gr1c High Power RF LDMOS Field Effect Transistor W, 28 V, 9 27 MHz Description The is an unmatched -watt LDMOS FET suitable for power amplifier applications with frequencies from 9 MHz to 27
DEM Part Number L144-28INTCK 144 MHz Transverter Kit and complete kit
DEM Part Number L144-28INTCK 144 MHz Transverter Kit and complete kit Power Out: Noise Figure and Gain: DC Power Requirement: 50 mw linear minimum 3.5 db NF nominal, 5 dbg maximum 12-15.5 VDC, 13.8 nominal
An Improved 2 x MRF286 Power Amplifier for 1296 MHz. By Darrell Ward VE1ALQ. Amplifier Design
An Improved 2 x MRF286 Power Amplifier for 1296 MHz By Darrell Ward VE1ALQ In recent years there has been a lot of amateur construction activity surrounding the Motorola MRF286 transistors on 1296 MHz.
RoHS Compliant MAAPSS0103 V3. High Power Linear Amplifier GHz. Pin Configuration. Features. Block Diagram. Description. Ordering Information 1
Features Ideal for WiMax, MESH Network, and Linear Applications P1dB: +32 dbm Typical Small Signal Gain: 34 db Typical EVM: 2.5% at 26 dbm Linear (OFDM) P OUT Integrated Detector Lead-Free 4 mm 16 lead
STEVAL-TDR033V1. RF power amplifier based on the PD85050S for mobile radio applications. Features. Description
RF power amplifier based on the PD85050S for mobile radio applications Data brief A proper planar balun embedded on the PCB (patent pending) allows the management of balanced versus unbalanced input/output
BLF6G10-135RN; BLF6G10LS-135RN
BLF6G0-5RN; BLF6G0LS-5RN Rev. 0 January 00 Product data sheet. Product profile. General description 5 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 000 MHz. Table.
Application Note 5421
MGA-30489 1.9GHz W-CDMA Driver Amplifier Design using Avago Technologies MGA-30489 Application Note 5421 Introduction Avago Technologies MGA-30489 is high linearity, 0.25Watt (24dBm) driver amplifier designed
Freescale Semiconductor, I
nc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1670/D Prepared by: Jean Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France INTRODUCTION This application note
Manufacturers of RF and Microwave Components and Assemblies Specialist in RF Filters, Power amplifiers and RF Switches
Manufacturers of RF and Microwave Components and Assemblies Specialist in RF Filters, Power amplifiers and RF Switches sales@cormic.com www.cormic.com P 724.940.7556 F 724.940.7707 RF & MICROWAVE FILTERS
Anaren 0805 (B0809J50ATI) balun optimized for Texas Instruments CC1100/CC1101 Transceiver
(ANN-2005) Rev B Page 1 of 13 Anaren 0805 (B0809J50ATI) balun optimized for Texas Instruments CC1100/CC1101 Transceiver Trong N Duong RF Co-Op Nithya R Subramanian RF Engineer Introduction The tradeoff
Efficiency (%) Characteristic Symbol Min Typ Max Unit. Adjancent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF LDMOS FET 8 W, 48 V, 746 960 MHz Description The PTRA094252FC is a 8-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 746
Siemens Aktiengesellschaft 101
YL 1570 For broadcast and single-sideband transmitters Ordering code Q52-X1084 Coaxial metal-ceramic tetrode, water-cooled with integrated cooling jacket, for frequencies up to 250 MHz; particularly suitable
PowerAmp Design. PowerAmp Design PAD01 COMPACT POWER OP AMP
PowerAmp Design COMPACT POWER OP AMP Rev C KEY FEATURES LOW COST HIGH VOLTAGE 00 VOLTS HIGH OUTPUURRENT 5A 30 WATT DISSIPATION CAPABILITY 50 WATT OUTPUAPABILITY SMALL FOOTPRINT 30mm SQUARE RoHS COMPLIANT
transistor is available in a flange and pill package. Package Types: & PN s: CG2H40045F & CG2H40045P
Rev 0.0 - May 2017 CG2H40045 45 W, DC - 4 GHz RF Power GaN HEMT Cree s CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045, operating from a 28 volt
Frequency Range: MHz. Efficiency: 80% Temperature Range: -20 to 65 C Max VSWR: 3:1. Class: Supply Voltage: 32.0V
Part Number Revision 0.B Release Date October 19, 2007 Revision Notes Final production release Amplifier Name Technical Specifications Summary Frequency Range: 86-108 MHz P1dB: 500 Watts CW Class: C Supply
Drain Efficiency (%) 10 a120501ea_g1-1. Characteristic Symbol Min Typ Max Unit. Return Loss IRL 10 7 db
PTVA1201EA Thermally-Enhanced High Power RF LDMOS FET W, V, 1200 10 MHz Description The PTVA1201EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 10 MHz frequency band. Features
ABA GHz Broadband Silicon RFIC Amplifier. Application Note 1349
ABA-52563 3.5 GHz Broadband Silicon RFIC Amplifier Application Note 1349 Introduction Avago Technologies ABA-52563 is a low current silicon gain block RFIC amplifier housed in a 6-lead SC 70 (SOT- 363)
4206 PA25-UHF-40. Frequency Range: MHz. Efficiency: 10% Temperature Range: -18 to 65 C Max VSWR: 10:1. Class: Supply Voltage: 32.
Part Number Revision 0.b Release Date July 24, 2007 This document applies to 4206 and 3692 and 5208 Revision Notes Updated Mechanical Specifications Amplifier Name Technical Specifications Summary Frequency
Features. Upconversion & Downconversion Applications MIXERS - SINGLE & DOUBLE BALANCED - SMT
v1. Typical Applications The HMC688LP4(E) is Ideal for: Cellular/3G & LTE/WiMAX/4G Basestations & Repeaters GSM, CDMA & OFDM Transmitters and Receivers Features High Input IP3: +35 dbm Low Conversion Loss:
OnBoard SMD GSM/NB-IoT antenna
Page 1 Rev 1.4 Application note and implementation guideline for GSM/UMTS operations OnBoard SMD GSM/NB-IoT antenna Patent: SE537042 + Pending Page 2 Rev 1.4 Table of contents 1. General... 3 2. Intended
OnBoard SMD GSM/NB-IoT antenna
Page 1 Rev 1.5 Application note and implementation guideline for NB-IoT operations OnBoard SMD GSM/NB-IoT antenna Patent: SE537042 + Pending Page 2 Rev 1.5 Table of contents 1. General... 3 2. Intended
SP4T SWITCH GaAs MMIC
SP4T SWITCH GaAs MMIC GENERAL DESCRIPTION NJG1519KC1 is a GaAs high power SP4T switch MMIC for antenna switch of dual mode cellular phone application such as GSM/DCS18. This switch is designed for an antenna
CMT211xA Schematic and PCB Layout Design Guideline
AN101 CMT211xA Schematic and PCB Layout Design Guideline 1. Introduction The purpose of this document is to provide the guidelines to design a low-power CMT211xA transmitter with the maximized output power,
SBB-3089Z Pb MHz InGaP HBT Active Bias Gain Block
Product Description Sirenza Microdevices SBB-389Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable
White Paper MHz RF Amplifier Design
White Paper 500 1500 MHz RF Amplifier Design Written by Bill Pretty Highpoint Security Technologies Property of Highpoint Security Technologies Inc The use of this document may use the contents to recreate
A GOOD REGENERATIVE RECEIVER WITH SIMPLE FINE TUNING (2008)
A GOOD REGENERATIVE RECEIVER WITH SIMPLE FINE TUNING (2008) A good SSB-CW-AM regenerative receiver with a fine tuning by moving the wooden stick with a grounded piece of PCB towards the coil. A good regenerative
HMC1040LP3CE. Amplifiers - Low Noise - smt. GaAs phemt MMIC LOW NOISE AMPLIFIER, GHz. Features. Typical Applications. General Description
v.112 HMC14LP3CE AMPLIFIER, 24-43. GHz Typical Applications This HMC14LP3BE is ideal for: Point-to-Point Radios Test Instrumentation SatCom Transponders & VSAT Industrial Sensors EW & ECM Subsystems Functional
Design of Dual-Band LNA for Mobile Radio ETI041 Radio Project 2011
Design of Dual-Band LNA for Mobile Radio ETI041 Radio Project 2011 Ivaylo Vasilev and Ruiyuan Tian Dept. of Electrical and Information Technology Lund University, Sweden {Ivaylo.Vasilev, Ruiyuan.Tian}@eit.lth.se
Features. Upconversion & Downconversion Applications MIXERS - SINGLE & DOUBLE BALANCED - SMT
v1. Typical Applications The HMC689LP4(E) is Ideal for: Cellular/3G & LTE/WiMAX/4G Basestations & Repeaters GSM, CDMA & OFDM Transmitters and Receivers Features High Input IP3: +32 dbm Low Conversion Loss:
PowerAmp Design. PowerAmp Design PAD183 COMPACT HIGH VOLTAGE OP AMP
PowerAmp Design Rev B KEY FEATURES LOW COST SMALL SIZE 40mm SQUARE HIGH VOLTAGE 350 VOLTS HIGH OUTPUT CURRENT 1.5A 35 WATT DISSIPATION CAPABILITY 100kHz POWER BANDWIDTH 330Vp-p 100V/µS SLEW RATE APPLICATIONS
Features
HMC37SC7E v1.1.3-3. GHz Typical Applications The HMC37SC7E is ideal for: Cellular/PCS/3G WCS, mmds & ism Fixed Wireless & WLAN Private Land Mobile Radio Functional Diagram Features Single Supply: Vdd =
A 2.5 W LDMOS MICROWAVE TOTEM-POLE PUSH- PULL RF POWER AMPLIFIER
A 2.5 W LDMOS MICROWAVE TOTEM-POLE PUSH- PULL RF POWER AMPLIFIER Gavin T. Watkins Toshiba Research Europe Limited, 32 Queen Square, Bristol, BS1 4ND, UK Gavin.watkins@toshiba-trel.com RF push-pull power
SGA-6489 SGA-6489Z Pb
Product Description The SGA-689 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring micron emitters provides high F T and excellent thermal perfomance. The heterojunction
APPLICATION NOTE FOR PA.700A ANTENNA INTEGRATION
APPLICATION NOTE FOR PA.700A ANTENNA INTEGRATION VERSION A Your Global Source for RF, Wireless & Energy Technologies www.richardsonrfpd.com 800.737.6937 630.208.2700 APN-11-8-001/A 14-July-11 Page 1 of
AN GHz to 2.7 GHz Doherty power amplifier using the BLF7G27LS-150P. Document information
2.5 GHz to 2.7 GHz Doherty power amplifier using the BLF7G27LS-150P Rev. 01 16 August 2010 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS,
Application note and implementation guideline OnBoard SMD 434 MHz
Page 1 Rev 1.4 Application note and implementation guideline OnBoard SMD 434 MHz Patent: SE537042 + Pending Page 2 Rev 1.4 Table of contents 1. General... 3 2. Intended applications... 3 3. Technical data...
Low Noise Amplifiers for 2304, 3456, 5760, and MHz using the ATF PHEMT by Al Ward WB5LUA
Low Noise Amplifiers for 2304, 3456, 5760, and 10368 MHz using the by Al Ward INTRODUCTION The Hewlett-Packard device is described in a series of low noise amplifiers for 2304, 3456, 5760, and 10368 MHz.
CMT2300AW Schematic and PCB Layout Design Guideline
AN141 CMT2300AW Schematic and PCB Layout Design Guideline Introduction This document is the CMT2300AW Application Development Guideline. It will explain how to design and use the CMT2300AW schematic and
The Design of A 125W L-Band GaN Power Amplifier
Sheet Code RFi0613 White Paper The Design of A 125W L-Band GaN Power Amplifier This paper describes the design and evaluation of a single stage 125W L-Band GaN Power Amplifier using a low-cost packaged
BLF8G20LS-400PV; BLF8G20LS-400PGV
BLF8G20LS-400PV; BLF8G20LS-400PGV Rev. 4 28 July 2015 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications
transistor is available in a flange and pill package. Package Types: & PN s: CG2H40045P & CG2H40045F
Rev 0.0 - May 2017 CG2H40045 45 W, DC - 4 GHz RF Power GaN HEMT Cree s CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045, operating from a 28 volt
Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]
![Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]](/thumbs/94/119028866.jpg "Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]")
Typical Applications This is ideal for: Features Low Noise Figure: 1.8 db Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation Functional Diagram High Gain: 19 db High