With these 2 sections option we try to get the most out of your LD Mosfet Transistor.

Size: px
Start display at page:

Download "With these 2 sections option we try to get the most out of your LD Mosfet Transistor."

Transcription

1 LPF 2M 1KW+ LDMOS LPF 2M 1KW+ LDMOS is an 1KW+ Filter, developed for use with the latest generation High Power LD Mosfet transistors. These extreme high power semiconductors have very high gain and often amplify up to 600MHz. Because of this high gain and amplification up to 600MHz, a Low Pass Filter can cause serious problems. In a Low Pass Filter, all reflected harmonics and power will be transferred back to the transistor and because the Transistor also amplifies up to 600MHz, it will see a very bad return loss on the harmonics it also produces. This all can give a reduced output, reduced efficiency and a lot of extra heat to dissipate. The design of this filter contains 2 separate sections, one Low Pass Filter section to attenuate the unwanted harmonics and a High Pass Filter with build in 50Ohm Load. This High Pass Filter section is the key in this Filter. It has 2 functions: 1) Let the Mosfet transistor see a good return loss on 2 nd and 3 rd harmonic. 2) Catching most of the reflected harmonics and power from the LPF section. With these 2 sections option we try to get the most out of your LD Mosfet Transistor. For best performance and power handling, we build this LPF on a silver plated Rogers Teflon PCB with silver plated copper wire inductors and Teflon PCB based capacitors. For optimum cooling, the LPF is placed on an 8mm CNC machined aluminium base. Dimension (L x W x H): 152mm x 70mm x 40mm (The picture is a mere example; it does not bind the provided product) Rev Page 1 from 5

2 ELECTRICAL SPECIFICATIONS min typ max Power handling * Watt Input impedance 50 Ohm Output impedance 50 Ohm * VSWR 1.25 maximum Input returns loss from MHz. Both 2 nd and 3 rd harmonics also have a good input returns loss from the HPF section. (typical values) Signal through filter, measured from MHz. Attenuation in the pass band is very low and on 2 nd and 3 rd harmonics attenuation is better than 55dB. (typical values) Magnitude Reflection measured with FSH Z2 on R&S FSH3.23 with vector/network analyser option enabled. Magnitude Transmission measured on R&S FSH3.23 with vector/network analyser option enabled. The above data is purely indicative; Fmbroadcastparts is not responsible for changes in values. Rev Page 2 from 5

3 Connections INPUT, connect the inner conductor of 50 Ohm Teflon coax like RG142 or similar to this point. Connect the outer conductor of the coax to GND of the PCB, see picture how to connect it the right way. OUTPUT, connect the inner conductor of 50 Ohm Teflon coax like RG142 or similar to this point. Connect the outer conductor of the coax to GND of the PCB, see picture how to connect it the right way. Always use frequency cut coax cables between modules. For Teflon, use 18CM or 36CM measured from begin to end of the outer conductor/shielding of the coax. Rev Page 3 from 5

4 Drill plan PCB size 152 x 70mm, drill holes M3, 0x0 is on left top side. Dimensions in mm, drill centre on values calculated from 0x0 Tolerance +/- 0.5mm (if you do not use CNC, use a carpenter pen) Rev Page 4 from 5

5 IMPORTANT NOTICE FMBROADCASTPARTS RESERVE THE RIGHT TO MAKE CHANGES TO THE PRODUCT(S) OR INFORMATION CONTAINED HEREIN WITHOUT NOTICE. FMBROADCASTPARTS ASSUMES NO RESPONSIBILITY FOR ANY ERRORS WHICH MAY APPEAR IN THIS DOCUMENT. WARRANTY INFORMATION APPLICABLE TO THE PRODUCT IDENTIFIED HEREIN IS AVAILABLE UPON REQUEST. NOTHING CONTAINED HEREIN SHALL CONSTITUTE A WARRANTY, REPRESENTATION OR GUARANTEE OF ANY KIND. FMBROADCASTPARTS EXPRESSLY DISCLAIMS ALL OTHER WARRANTIES, EXPRESS AND/OR IMPLIED INCLUDING BUT NOT LIMITED TO WARRANTIES OF MERCHANTABILITY, AND OF FITNESS FOR A PARTICULAR PURPOSE, USE OR APPLICATION. WARNING FMBROADCASTPARTS PRODUCTS ARE NOT INTENDED FOR USE IN LIFE SUPPORT APPLIANCES, DEVICES OR SYSTEMS. USE OF A FMBROADCASTPARTS PRODUCT IN ANY SUCH APPLICATION WITHOUT WRITTEN CONSENT IS PROHIBITED. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of FMbroadcastparts. Rev Page 5 from 5

With these 2 sections option we try to get the most out of your LD Mosfet Transistor.

With these 2 sections option we try to get the most out of your LD Mosfet Transistor. LPF 6M 1KW+ LDMOS LPF 6M 1KW+ LDMOS is an 1KW+ Filter, developed for use with the latest generation High Power LD Mosfet transistors. These extreme high power semiconductors have very high gain and often

More information

Stereo Clipper 15KHz LPF. Stereo audio clipper with active 15KHz filters

Stereo Clipper 15KHz LPF. Stereo audio clipper with active 15KHz filters Stereo Clipper 15KHz LPF Stereo audio clipper with active 15KHz filters Dimension (L x W x H): 62mm x 50mm x 15mm FMB stereo audio clipper with active 15KHz filters, is an audio board with professional

More information

600W HAM RADIO 2M/144Mhz POWER AMPLIFIER MODULE

600W HAM RADIO 2M/144Mhz POWER AMPLIFIER MODULE Designed for 2M/144Mhz radio transposers and transmitters, this amplifier incorporates LDMOS transistors to enhance ruggedness and reliability. General characteristics: 140-148 MHz. 48 Volts. Internal

More information

Designed for FM radio transposers and transmitters, this amplifier incorporates MOSFET transistors to enhance ruggedness and reliability.

Designed for FM radio transposers and transmitters, this amplifier incorporates MOSFET transistors to enhance ruggedness and reliability. Designed for FM radio transposers and transmitters, this amplifier incorporates MOSFET transistors to enhance ruggedness and reliability. General characteristics: 87.5-108.0 MHz. 48 Volts. Internal Bias.

More information

Key Features and Functions > Temperature compensated bias > SmartBias Infrared operated bias circuit (Option) > High temperature protections

Key Features and Functions > Temperature compensated bias > SmartBias Infrared operated bias circuit (Option) > High temperature protections LDU671C Product Name GR03761 Manufacturer's Part Number Technical Specification Summary Frequency Range 470-862MHz Typ. Gain 20 db P1dB 650 W Typ. Efficiency 40% At 1dBcp Analogue TV 450 Wps Temperature

More information

UA1K-R. 280Wrms max shoulder < -36dBc (with precorrection) 250Wrms nominal. 19 3HU std 600mm depth[2]

UA1K-R. 280Wrms max shoulder < -36dBc (with precorrection) 250Wrms nominal. 19 3HU std 600mm depth[2] 250Wrms DVB-T/1kW p-synk UHF Amplifier is a full LD-MOS Broadcast Power Amplifier designed for both digital and analog applications. The unit is the state of the art in terms of easy assembly, reliability

More information

external circuits shown on page 3.

external circuits shown on page 3. Single Supply RFIC Power Amplifier 800-1675 MHz Operation Features >30 dbm Output Power @ 5V Single 3V to 5V Supply - Class A Operation Linear Class AB Operation (requires -VGG2) 50% Efficiency Unconditionally

More information

3.6 A 220 V analog application Operating Temperature 0 to +45 C Humidity

3.6 A 220 V analog application Operating Temperature 0 to +45 C Humidity 80Wrms DVB-T/250W p-synk UHF Amplifier AU50-D is a full LD-MOS Broadcast Power Amplifier designed for both digital and analog applications. The unit is the state of the art in terms of easy assembly, reliability

More information

RLAS0510A. 500 ~ 1000 MHz Super Low Noise Amplifier 1. Key Features: Absolute Maximum Ratings 3 : Electrical Specifications: (at room temperature)

RLAS0510A. 500 ~ 1000 MHz Super Low Noise Amplifier 1. Key Features: Absolute Maximum Ratings 3 : Electrical Specifications: (at room temperature) 5 ~ MHz Super Low Noise Amplifier 1 RLAS5A is an ultra low noise figure, wideband, and unconditionally stable SMT packaged amplifier with exceptionally low input and output VSWR. The amplifier offers a

More information

RPAM0510A. 470 ~ 960 MHz Broadband Ultra Linear Power Amplifier 1. Absolute Maximum Ratings 2 : Key Features: Electrical Specifications: (at +25 o C)

RPAM0510A. 470 ~ 960 MHz Broadband Ultra Linear Power Amplifier 1. Absolute Maximum Ratings 2 : Key Features: Electrical Specifications: (at +25 o C) 47 ~ 96 MHz Broadband Ultra Linear Power Amplifier 1 RPAM51A is a broadband, high power, and high linearity amplifier. The amplifier offers exceptional +. db gain flatness, 31 db gain, 35 dbm P1dB and

More information

ital mec PAFM0600A Objective data sheet Power Amplifier Section 600W FM Absolute maximum ratings Electrical Specifications

ital mec PAFM0600A Objective data sheet Power Amplifier Section 600W FM Absolute maximum ratings Electrical Specifications Power Amplifier Section 600W FM Designed primarily for FM application, with a reliable Power Ldmos device. This amplifier is suitable for any CW or pulsed application. Output power detector and temperature

More information

HAM RADIO. 1 KW SSPA 144 MHz RF POWER AMPLIFIER SWR 65:1

HAM RADIO. 1 KW SSPA 144 MHz RF POWER AMPLIFIER SWR 65:1 AMD 1000 AR 144 November 2011 First Edition HAM RADIO 1 KW SSPA 144 MHz RF POWER AMPLIFIER SWR 65:1 RF Dispositive : MRF6VP61K25HR6 Freescale Frequency Range 142-146 MHz 4 W Input ± 0.5 W ( @ 1 KW Carrier

More information

MHz (FM BAND) 50 Volts Input/output 50 ohms Pout: 1250W minimum Up to 85% efficiency 22dB Gain NXP MRF1K50 Mosfet Planar RF Transformers

MHz (FM BAND) 50 Volts Input/output 50 ohms Pout: 1250W minimum Up to 85% efficiency 22dB Gain NXP MRF1K50 Mosfet Planar RF Transformers Model MRF1K50-PLA FM Pallet Amplifier This amplifier module is ideal for final output stages in FM Broadcast Applications. 87.5 108.1MHz (FM BAND) 50 Volts Input/output 50 ohms Pout: 1250W minimum Up to

More information

Unit Min Typ. Max BW Bandwidth Pout = 250 W (CW) MHz Gp Power gain Pref = 250 W (CW) db P out 1dB

Unit Min Typ. Max BW Bandwidth Pout = 250 W (CW) MHz Gp Power gain Pref = 250 W (CW) db P out 1dB 400W pep 27dBc min Tetrafet Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and push-pull TETRAFET to enhance ruggedness and

More information

MHz (FM BAND) 50 Volts Input/output 50 ohms Pout: 1000W minimum Up to 85% efficiency 24dB Gain NXP BLF188XR Mosfet Planar RF Transformers

MHz (FM BAND) 50 Volts Input/output 50 ohms Pout: 1000W minimum Up to 85% efficiency 24dB Gain NXP BLF188XR Mosfet Planar RF Transformers Model P1000FM-188PLA FM Pallet Amplifier This amplifier module is ideal for final output stages in FM Broadcast Applications. 87.5 108.1MHz (FM BAND) 50 Volts Input/output 50 ohms Pout: 1000W minimum Up

More information

Using a Linear Transistor Model for RF Amplifier Design

Using a Linear Transistor Model for RF Amplifier Design Application Note AN12070 Rev. 0, 03/2018 Using a Linear Transistor Model for RF Amplifier Design Introduction The fundamental task of a power amplifier designer is to design the matching structures necessary

More information

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET Freescale Semiconductor Technical Data Document Number: Rev. 0, 7/2016 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 220 W CW high efficiency RF power transistor is designed

More information

Model FM350 FM Broadcast Pallet Amplifier

Model FM350 FM Broadcast Pallet Amplifier Model FM350 FM Broadcast Pallet Amplifier Designed for FM radio transmitters, this amplifier incorporates the latest technology from ST Microelectronics. (Formerly known as SGS Thompson). 86 110MHz 48

More information

MHz (FM BAND) 50 Volts Input/output 50 ohms Pout: 1000W minimum 78% 23dB Gain NXP BLF184XR Mosfet

MHz (FM BAND) 50 Volts Input/output 50 ohms Pout: 1000W minimum 78% 23dB Gain NXP BLF184XR Mosfet Model P600FM-184XR FM Pallet Amplifier This amplifier module is ideal for final output stages in FM Broadcast Applications. 87.5 108.1MHz (FM BAND) 50 Volts Input/output 50 ohms Pout: 1000W minimum 78%

More information

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET Freescale Semiconductor Technical Data RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 12.5 W CW high efficiency RF power transistor is designed for consumer and commercial cooking

More information

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET Freescale Semiconductor Technical Data RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 250 W CW RF power transistor is designed for consumer and commercial cooking applications

More information

CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. Rev. 3 12 September 211 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin

More information

DB Evaluation board using PD85004 for 900 MHz 2-way radio. Features. Description

DB Evaluation board using PD85004 for 900 MHz 2-way radio. Features. Description Evaluation board using PD85004 for 900 MHz 2-way radio Features Excellent thermal stability Frequency: 860-960 MHz Supply voltage: 13.6 V Output power: 4 W Power gain: 17.4 ± 0.3 db Efficiency: 56 % -

More information

QPC7336TR13. 45MHz to 1218MHz Variable Equalizer. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information

QPC7336TR13. 45MHz to 1218MHz Variable Equalizer. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information 45MHz to 1218MHz Variable Equalizer Product Description The QPC7336 is a voltage controlled variable equalizer employing SOI attenuator, optimized for DOCSIS 3.1 operation between 45MHz and 1218MHz. 14

More information

CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. Rev. 3 8 September 2011 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin

More information

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs Preliminary Data Document Number: Order from RF Marketing Rev. 1.0, 09/2017 RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 750 W CW transistors are designed for industrial,

More information

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These RF power transistors are designed for pulse applications operating at 1030 to 1090 MHz and can be used over

More information

DISCRETE SEMICONDUCTORS DATA SHEET M3D438. BLF1043 UHF power LDMOS transistor. Product specification Supersedes data of 2002 November 11.

DISCRETE SEMICONDUCTORS DATA SHEET M3D438. BLF1043 UHF power LDMOS transistor. Product specification Supersedes data of 2002 November 11. DISCRETE SEMICONDUCTORS DATA SHEET M3D438 Supersedes data of 2002 November 11 2003 Mar 13 FEATURES Typical 2-tone performance at a supply voltage of 26 V and I DQ of 85 ma Output power = 10 W (PEP) Gain

More information

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF power transistors designed for CW and pulse applications operating at 1300 MHz. These devices are suitable

More information

BCP56H series. 80 V, 1 A NPN medium power transistors

BCP56H series. 80 V, 1 A NPN medium power transistors SOT223 8 V, A NPN medium power transistors Rev. 23 November 26 Product data sheet. Product profile. General description NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BFG10W/X UHF power transistor. Product specification 1995 Sep 22

DISCRETE SEMICONDUCTORS DATA SHEET. BFG10W/X UHF power transistor. Product specification 1995 Sep 22 DISCRETE SEMICONDUCTORS DATA SHEET 1995 Sep 22 FEATURES High efficiency Small size discrete power amplifier 900 MHz and 1.9 GHz operating areas Gold metallization ensures excellent reliability. APPLICATIONS

More information

ACC-6SMRP2U Data Sheet

ACC-6SMRP2U Data Sheet ACC-6SMRP2U Data Sheet 6 min co-ax cable with SMA Reverse Polarity jack and u.fl plug ADS-CC6SMRP2U-103R Data Sheet December 3, 2014 2014 ACKme Networks. http://ack.me Disclaimer While the information

More information

80 V, 1 A NPN medium power transistors. Type number Package PNP complement Nexperia JEITA JEDEC BCP56T SOT223 SC-73 - BCP53T

80 V, 1 A NPN medium power transistors. Type number Package PNP complement Nexperia JEITA JEDEC BCP56T SOT223 SC-73 - BCP53T 8 V, A NPN medium power transistors Rev. 5 July 26 Product data sheet. Product profile. General description NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic

More information

60 V, 1 A PNP medium power transistors

60 V, 1 A PNP medium power transistors Rev. 8 25 February 28 Product data sheet. Product profile. General description PNP medium power transistor series. Table. Product overview Type number [] Package NPN complement NXP JEITA JEDEC BCP52 SOT223

More information

A short, off-center fed dipole for 40 m and 20 m by Daniel Marks, KW4TI

A short, off-center fed dipole for 40 m and 20 m by Daniel Marks, KW4TI A short, off-center fed dipole for 40 m and 20 m by Daniel Marks, KW4TI Version 2017-Nov-7 Abstract: This antenna is a 20 to 25 foot long (6.0 m to 7.6 m) off-center fed dipole antenna for the 20 m and

More information

750 MHz, 34 db gain push-pull amplifier

750 MHz, 34 db gain push-pull amplifier Rev. 04 30 March 2005 Product data sheet 1. Product profile 1.1 General description Hybrid high dynamic range amplifier module in a SOT115J package operating at a supply voltage of 24 V (DC). The module

More information

BC635; BCP54; BCX V, 1 A NPN medium power transistors

BC635; BCP54; BCX V, 1 A NPN medium power transistors 45 V, A NPN medium power transistors Rev. 7 4 June 7 Product data sheet. Product profile. General description NPN medium power transistor series. Table. Product overview Type number [] Package PNP complement

More information

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs Freescale Semiconductor Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 350 W CW RF power transistors are designed for consumer and commercial cooking applications

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK302

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type FM Tuner, VHF RF Amplifier Applications Unit: mm Low reverse transfer capacitance: C rss = 0.035 pf (typ.) Low noise figure: NF = 1.7dB (typ.)

More information

Compact 50 MHz High Power Solid State Amplifier using MRFE6VP61K25H

Compact 50 MHz High Power Solid State Amplifier using MRFE6VP61K25H Compact 50 MHz High Power Solid State Amplifier using MRFE6VP61K25H By F5FLN Michel ROUSSELET and F1TE Lucien SERRANO, F6BKI Jacques RAMBAUD November 2011 Rev1 This Article deals with RF amplifier design

More information

PDTD113E series. NPN 500 ma, 50 V resistor-equipped transistors; R1 = 1 kω, R2 = 1 kω. 500 ma NPN Resistor-Equipped Transistors (RET) family.

PDTD113E series. NPN 500 ma, 50 V resistor-equipped transistors; R1 = 1 kω, R2 = 1 kω. 500 ma NPN Resistor-Equipped Transistors (RET) family. PDTDE series NPN 500 ma, 50 V resistor-equipped transistors; R = kω, R = kω Rev. 0 4 April 005 Product data sheet. Product profile. General description 500 ma NPN Resistor-Equipped Transistors (RET) family.

More information

BC817-25QA; BC817-40QA

BC817-25QA; BC817-40QA Rev. 1 3 September 2013 Product data sheet 1. Product profile 1.1 General description 500 ma NPN general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD)

More information

Drain Efficiency (%) c262157sh-gr1. Characteristic Symbol Min Typ Max Unit. Gain Gps db. Adjacent Channel Power Ratio ACPR 31.

Drain Efficiency (%) c262157sh-gr1. Characteristic Symbol Min Typ Max Unit. Gain Gps db. Adjacent Channel Power Ratio ACPR 31. c2657sh-gr1 Thermally-Enhanced High Power RF LDMOS FET W, 28 V, 26 269 MHz Description The LDMOS FET is designed for use in Doherty cellular power applications in the 26 MHz to 269 MHz frequency band.

More information

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 750 W CW transistors are designed for industrial, scientific and medical (ISM) applications in the 700 to 1300

More information

20 ma LED driver in SOT457

20 ma LED driver in SOT457 in SOT457 Rev. 1 December 2013 Product data sheet 1. Product profile 1.1 General description LED driver consisting of resistor-equipped PNP transistor with two diodes on one chip in an SOT457 (SC-74) plastic

More information

DATA SHEET. BLF UHF power LDMOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Mar 07.

DATA SHEET. BLF UHF power LDMOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Mar 07. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 Supersedes data of 2001 Mar 07 2003 Feb 10 FEATURES Typical 2-tone performance at a supply voltage of 26 V and I DQ of 500 ma: Output power = 90

More information

Broadcast Concepts Inc NW 102 Road Suite 4 Medley FL Tel: : Fax Model P50FM42MH-SMA2 FM Pallet Amplifier Module

Broadcast Concepts Inc NW 102 Road Suite 4 Medley FL Tel: : Fax Model P50FM42MH-SMA2 FM Pallet Amplifier Module Model P50FM42MH-SMA2 FM Pallet Amplifier Module This amplifier module is ideal for driver stages in FM Broadcast transmitters. 86 110MHz 28Volts Pout: 50W CW minimum 40dB Gain Class AB MACOM MRF173 Mosfet

More information

65 V, 100 ma NPN/NPN general-purpose transistor. Type number Package PNP/PNP NPN/PNP complement complement

65 V, 100 ma NPN/NPN general-purpose transistor. Type number Package PNP/PNP NPN/PNP complement complement Rev. 01 24 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product

More information

Dual N-channel dual gate MOSFET

Dual N-channel dual gate MOSFET Rev. 1 16 March 25 Product data sheet 1. Product profile 1.1 General description The is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The

More information

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These 1300 W RF power transistors are designed for applications operating

More information

DATA SHEET. PEMZ1 NPN/PNP general purpose transistors DISCRETE SEMICONDUCTORS Nov 07. Product specification Supersedes data of 2001 Sep 25

DATA SHEET. PEMZ1 NPN/PNP general purpose transistors DISCRETE SEMICONDUCTORS Nov 07. Product specification Supersedes data of 2001 Sep 25 DISCRETE SEMICONDUCTORS DATA SHEET M3D744 NPN/PNP general purpose transistors Supersedes data of 2001 Sep 25 2001 Nov 07 FEATURES 300 mw total power dissipation Very small 1.6 1.2 mm ultra thin package

More information

DATA SHEET. BC847BVN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS Nov 07. Product specification Supersedes data of 2001 Aug 30

DATA SHEET. BC847BVN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS Nov 07. Product specification Supersedes data of 2001 Aug 30 DISCRETE SEMICONDUCTORS DATA SHEET M3D744 NPN/PNP general purpose transistor Supersedes data of 2001 Aug 30 2001 Nov 07 FEATURES 300 mw total power dissipation Very small 1.6 mm x 1.2 mm ultra thin package

More information

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to 500 MHz. Devices

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BFG135 NPN 7GHz wideband transistor. Product specification 1995 Sep 13

DISCRETE SEMICONDUCTORS DATA SHEET. BFG135 NPN 7GHz wideband transistor. Product specification 1995 Sep 13 DISCRETE SEMICONDUCTORS DATA SHEET 1995 Sep 13 DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures,

More information

BC857XQA series. 45 V, 100 ma PNP general-purpose transistors

BC857XQA series. 45 V, 100 ma PNP general-purpose transistors 45 V, 100 ma PNP general-purpose transistors Rev. 1 26 August 2015 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215)

More information

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs Freescale Semiconductor Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR military, aerospace and defense,

More information

Drain Efficiency (%) c270101m-2.1-gr1c. Characteristic Symbol Min Typ Max Unit

Drain Efficiency (%) c270101m-2.1-gr1c. Characteristic Symbol Min Typ Max Unit c2711m-2.1-gr1c High Power RF LDMOS Field Effect Transistor 1 W, 28 V, 9 27 MHz Description The is an unmatched 1-watt LDMOS FET suitable for power amplifier applications with frequencies from 9 MHz to

More information

RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET This high ruggedness device is designed for use in high VSWR industrial, scientific and medical applications

More information

AN1229 Application note

AN1229 Application note Application note SD2932 RF MOSFET for 300 W FM amplifier Introduction This application note gives a description of a broadband power amplifier operating over the frequency range 88-108 MHz using the new

More information

AN BLF0910H9LS600

AN BLF0910H9LS600 Rev. 1 30 January 2018 Application note Document information Info Content Keywords Abstract, Gen9, LDMOS, RF Energy This application note provides general PCB design and transistor mounting guidelines

More information

SAW Components Data Sheet B3750

SAW Components Data Sheet B3750 Features Ceramic package QCC8C RF low-loss filter for remote control receivers Package for Surface Mounted Technology (SMT) Balanced and unbalanced operation possible Passivation layer: Protec Terminals

More information

Data Sheet, Rev.3.2, Oct BGM781N11. GPS Front-End Module. RF & Protection Devices

Data Sheet, Rev.3.2, Oct BGM781N11. GPS Front-End Module. RF & Protection Devices Data Sheet, Rev.3.2, Oct. 2010 BGM781N11 GPS Front-End Module RF & Protection Devices Edition 2010-10-28 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2010. All

More information

MMIC VCO MMVC92. MMIC VCO GHz Type Q. General Description. Features. Packages. Functional Diagram. Applications

MMIC VCO MMVC92. MMIC VCO GHz Type Q. General Description. Features. Packages. Functional Diagram. Applications 8.6-9.5 GHz General Description The is designed in a highly reliable InGaP-GaAs Hetero-Junction Bipolar Transistor (HBT) process with active device, integrated resonator, tuning diode and isolating output

More information

Өjc Thermal Resistance Pulse Width=128uS, Duty=10% 0.2 C/W Bias Condition: Vdd=+65V, Idq=1000mA peak current (Vgs= -2.0 ~ -4.

Өjc Thermal Resistance Pulse Width=128uS, Duty=10% 0.2 C/W Bias Condition: Vdd=+65V, Idq=1000mA peak current (Vgs= -2.0 ~ -4. Preliminary 0912GN-600 GENERAL DESCRIPTION The 0912GN-600 is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18dB gain, 600 Watts of pulsed RF output

More information

DATA SHEET. BC868 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Data supersedes data of 1999 Apr 08

DATA SHEET. BC868 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Data supersedes data of 1999 Apr 08 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 Data supersedes data of 1999 Apr 08 2003 Dec 02 FEATURES High current Two current gain selections 1.2 W total power dissipation. APPLICATIONS Linear

More information

50 ma LED driver in SOT457

50 ma LED driver in SOT457 SOT457 in SOT457 Rev. 1 December 2013 Product data sheet 1. Product profile 1.1 General description LED driver consisting of resistor-equipped PNP transistor with two diodes on one chip in an SOT457 (SC-74)

More information

DATA SHEET. BGE MHz, 17 db gain push-pull amplifier DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Mar 30.

DATA SHEET. BGE MHz, 17 db gain push-pull amplifier DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Mar 30. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D248 BGE885 860 MHz, 17 db gain push-pull amplifier Supersedes data of 1999 Mar 30 2001 Oct 31 FEATURES PINNING - SOT115D Excellent linearity Extremely

More information

BLA6H LDMOS avionics radar power transistor

BLA6H LDMOS avionics radar power transistor Rev. 4 1 May 21 Product data sheet 1. Product profile 1.1 General description 5 W LDMOS power transistor intended for avionics transmitter applications in the 96 MHz to 1215 MHz range such as Mode-S, TCAS,

More information

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D109. BGA6489 MMIC wideband medium power amplifier. Product specification 2003 Sep 18

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D109. BGA6489 MMIC wideband medium power amplifier. Product specification 2003 Sep 18 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D19 MMIC wideband medium power amplifier 23 Sep 18 FEATURES Broadband 5 Ω gain block 2 dbm output power SOT89 package Single supply voltage needed. PINNING

More information

30 / 30 V, 350 / 200 ma N/P-channel Trench MOSFET. Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR2 (P-channel)

30 / 30 V, 350 / 200 ma N/P-channel Trench MOSFET. Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR2 (P-channel) Rev. 29 July 2 Product data sheet. Product profile. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very small SOT363 (SC-88) Surface-Mounted Device (SMD)

More information

DATA SHEET. BGY MHz, 21.5 db gain push-pull amplifier Nov 15. Product specification Supersedes data of 1999 Mar 30. book, halfpage M3D252

DATA SHEET. BGY MHz, 21.5 db gain push-pull amplifier Nov 15. Product specification Supersedes data of 1999 Mar 30. book, halfpage M3D252 DATA SHEET book, halfpage M3D252 BGY887 860 MHz, 21.5 db gain push-pull amplifier Supersedes data of 1999 Mar 30 2001 Nov 15 FEATURES PINNING - SOT115J Excellent linearity Extremely low noise Excellent

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BF998WR N-channel dual-gate MOS-FET. Product specification Supersedes data of 1995 Apr 25.

DISCRETE SEMICONDUCTORS DATA SHEET. BF998WR N-channel dual-gate MOS-FET. Product specification Supersedes data of 1995 Apr 25. DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 995 Apr 25 997 Sep 5 FEATURES High forward transfer admittance Short channel transistor with high forward transfer admittance to input capacitance

More information

RF LDMOS Wideband 2-Stage Power Amplifiers

RF LDMOS Wideband 2-Stage Power Amplifiers Technical Data RF LDMOS Wideband 2-Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance

More information

TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK294

TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK294 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type TV Tuner, VHF RF Amplifier Application Unit: mm Superior cross modulation performance Low reverse transfer capacitance: C rss = 20 ff

More information

DATA SHEET. 2PC945 NPN general purpose transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28.

DATA SHEET. 2PC945 NPN general purpose transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28. DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D186 Supersedes data of 1999 May 28 2004 Nov 08 FEATURES Low current (max. 100 ma) Low voltage (max. 50 V). APPLICATIONS General purpose switching

More information

Planar PIN diode in a SOD882 leadless ultra small SMD plastic package. Pin Description Simplified outline Symbol 1 cathode

Planar PIN diode in a SOD882 leadless ultra small SMD plastic package. Pin Description Simplified outline Symbol 1 cathode Rev. 01 11 March 2005 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882 leadless ultra small SMD plastic package. 1.2 Features High speed switching for RF signals

More information

BC817K series. 1 Product profile. 45 V, 500 ma NPN general-purpose transistors. 1.1 General description. 1.2 Features and benefits. 1.

BC817K series. 1 Product profile. 45 V, 500 ma NPN general-purpose transistors. 1.1 General description. 1.2 Features and benefits. 1. 45 V, 5 ma NPN general-purpose transistors Rev. 2 6 March 28 Product data sheet Product profile. General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD)

More information

PDTB1xxxT series. 500 ma, 50 V PNP resistor-equipped transistors

PDTB1xxxT series. 500 ma, 50 V PNP resistor-equipped transistors Rev. 3 May 204 Product data sheet. Product profile. General description PNP Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table. Product

More information

BCP68; BC868; BC68PA

BCP68; BC868; BC68PA Rev. 8 8 October 2 Product data sheet. Product profile. General description NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table. Product overview Type number [] Package

More information

Model B0922N7575AHF Rev B. Ultra Low Profile 0404 Balun

Model B0922N7575AHF Rev B. Ultra Low Profile 0404 Balun Model B9N7575AHF Ultra Low Profile 44 Balun 75Ω to 75Ω Balanced Description The B9N7575AHF is a low profile, low impedance mm square subminiature wideband unbalanced to balanced transformer designed for

More information

BLF4G10LS-120. UHF power LDMOS transistor. G p (db) P L (W)

BLF4G10LS-120. UHF power LDMOS transistor. G p (db) P L (W) Rev. 1 1 January 26 Product data sheet 1. Product profile 1.1 General description 12 W LDMOS power transistor for base station applications at frequencies from 8 MHz to 1 MHz. Table 1: Typical performance

More information

NPN low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

NPN low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. Rev. 2 7 November 29 Product data sheet. Product profile. General description NPN low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic

More information

RFM XR. 2-30MHz 500W Class AB Linear High Performance Amplifier. Maximum Ratings Operation beyond these ratings will void warranty.

RFM XR. 2-30MHz 500W Class AB Linear High Performance Amplifier. Maximum Ratings Operation beyond these ratings will void warranty. Class AB 500W XR-rated linear amplifier 2-30MHz bandwidth 27dB typical gain 64% typical efficiency +/- 1.1dB typical gain flatness Temperature-compensated bias TTL disable The RFP2-30-500XR is an XR-rated

More information

RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Technical Data Document Number: Rev. 2, 11/2018 RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld two--way radio applications with frequencies

More information

DATA SHEET. BGY MHz, 15 db gain push-pull amplifier DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Apr 14.

DATA SHEET. BGY MHz, 15 db gain push-pull amplifier DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Apr 14. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGY883 860 MHz, 15 db gain push-pull amplifier Supersedes data of 1997 Apr 14 2001 Oct 31 FEATURES PINNING - SOT115J Excellent linearity Extremely

More information

PDTD1xxxU series. 500 ma, 50 V NPN resistor-equipped transistors

PDTD1xxxU series. 500 ma, 50 V NPN resistor-equipped transistors PDTDxxxU series Rev. 3 May 24 Product data sheet. Product profile. General description NPN Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-7) Surface-Mounted Device (SMD) plastic package.

More information

Features. Packages. Applications

Features. Packages. Applications 8.4-9.1 GHz General Description The MMVC88 is designed in a highly reliable InGaP-GaAs Hetero-Junction Bipolar Transistor (HBT) process with active device, integrated resonator, tuning diode and isolating

More information

BC857xMB series. 45 V, 100 ma PNP general-purpose transistors

BC857xMB series. 45 V, 100 ma PNP general-purpose transistors SOT883B Rev. 1 21 February 2012 1. Product profile 1.1 General description PNP general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. Table 1. Product

More information

BCP55; BCX55; BC55PA

BCP55; BCX55; BC55PA Rev. 8 24 October 2 Product data sheet. Product profile. General description NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table. Product overview Type number []

More information

INTEGRATED CIRCUITS DATA SHEET. TDA2611A 5 W audio power amplifier

INTEGRATED CIRCUITS DATA SHEET. TDA2611A 5 W audio power amplifier INTEGRATED CIRCUITS DATA SHEET TDA611A W audio power amplifier November 198 The TDA611A is a monolithic integrated circuit in a 9-lead single in-line (SIL) plastic package with a high supply voltage audio

More information

TAT7457-EB. CATV 75 Ω phemt Adjustable Gain RF Amplifier. Applications. Ordering Information

TAT7457-EB. CATV 75 Ω phemt Adjustable Gain RF Amplifier. Applications. Ordering Information Applications Single-ended and Push-pull Optical Receivers Low-noise Drop Amplifiers Distribution Amplifiers Multi-Dwelling Units Single-ended Gain Block SOT-89 package Product Features Functional Block

More information

TQP3M9035 High Linearity LNA Gain Block

TQP3M9035 High Linearity LNA Gain Block Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / GSM General Purpose Wireless TDD or FDD systems Product Features 2x2mm 8-lead DFN plastic package Functional Block Diagram 5-4 MHz.66 db

More information

BCP53; BCX53; BC53PA

BCP53; BCX53; BC53PA Rev. 9 9 October 2 Product data sheet. Product profile. General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table. Product overview Type number [] Package

More information

45 V, 800 ma PNP general-purpose transistor. General-purpose switching and amplification. Symbol Parameter Conditions Min Typ Max Unit

45 V, 800 ma PNP general-purpose transistor. General-purpose switching and amplification. Symbol Parameter Conditions Min Typ Max Unit Rev. 1 21 April 217 Product data sheet 1 General description 2 Features and benefits 3 Applications PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

More information

QPL9096 Ultra Low-Noise, Bypass LNA

QPL9096 Ultra Low-Noise, Bypass LNA General Description The is a high-linearity, ultra-low noise gain block amplifier with a bypass mode functionality integrated in the product. At. GHz, the amplifier typically provides db gain, +. dbm OIP,

More information

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs Freescale Semiconductor Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 350 W CW transistors are designed for industrial, scientific and medical (ISM) applications

More information

EC 200 CHARACTERISTICS D A T A S H E E T. Kabelwerk EUPEN AG cable. M e c h a n i c a l c h a r a c t e r i s t i c s

EC 200 CHARACTERISTICS D A T A S H E E T. Kabelwerk EUPEN AG cable. M e c h a n i c a l c h a r a c t e r i s t i c s EC 200 EC200 - Rev. 3-23.06.11 Characteristic impedance 50 ± 2 Material copper wire Nominal capacity (pf/m) 80.5 Construction - Relative propagation velocity (%) 83 Diameter (mm) 1.05 Inductance (µh/m)

More information

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET Freescale Semiconductor Technical Data RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET RF power transistor suitable for industrial heating applications operating at 2450 MHz. Device

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information