600W HAM RADIO 2M/144Mhz POWER AMPLIFIER MODULE
|
|
|
- Eugene Short
- 6 years ago
- Views:
Transcription
1 Designed for 2M/144Mhz radio transposers and transmitters, this amplifier incorporates LDMOS transistors to enhance ruggedness and reliability. General characteristics: MHz. 48 Volts. Internal Bias. Input/Output 50 Ω. Board PTFE 1.6mm GOLD plated. Pout : 600 W typical, 700 W max. Gain : 21 db typical, 22dB Max. Class A, AB, B or C (ajustable). Modes Supported: FM, CW, SSB and others. Devices: LDMOS Technology. ROHS Compliant. Mosfets supported: NXP/Freescale MRF6VP2600H NXPFreescale MRFE6VP5600H AMPLEON/NXP BLF574 AMPLEON/NXP BLF574XR AMPLEON/NXP BLF184XR Dimensions (L x W x H): 102 x 50 x 32mm (4" x 2" x 1.25") This picture is a mere example, it does not bind the provided product ABSOLUTE MAXIMUM RATINGS (Heatsink Temperature = 50 C) SYMBOL PARAMETER VALUE UNIT Vs Drain Voltage Supply 50 V Is Supply Current 20 A VSWR1 Load Mismatch (all phase angles, T-heatsink =40 C, Id=14A) 9:1 - VSWR2 Load Mismatch (all phase angles, T-heatsink =40 C, Id=14A) 65:1 - Tstg Storage Temperature Range -30 to +100 C T-heatsink Operating Temperature -20 to +70 C
2 ELECTRICAL SPECIFICATIONS (T-heatsink = 50 C, 50Ω loaded, Vs = 48 V) CHARACTERISTICS MIN. TYP. MAX. UNIT Operating Frequency Range Mhz RF Output Power (RFOUT) W RF Power Input (RFIN) W Power Gain (600W output) db Power Supply Module (Vs) V Mosfet Gate Current (Igs) ma Current (+48V) A Collector Efficiency (Load 50Ω) % Input VSWR 1.1:1 1.3:1 1.5:1 F2 Second Harmonic (without L.P.F.) dbc F3 Third Harmonic (without L.P.F.) dbc NOTES
3 CONNECTIONS 1. RF Input (0-7W). You connect 50 ohm coaxial cable (RG316 or RG178 type) in this connection. 2. RF Output (0-600W). You connect 50 ohm coaxial cable (RG142 type) in this connection V input power supply connection Vs. Connect to you +48V power supply. +48V/20A min. RECOMMENDED. You use uF/63V electrolytic capacitor. Note: You connect GND (Supply Negative) to a M3 screw board or aluminium heatsink. QUICK ASSEMBLY INSTRUCTIONS: 1. Install PCB in copper laminate plate with M2 or M2.5 screws in green points (14 screws). 2. Install copper laminate in Aluminium Heatsink and use M3 screws in violet points (8 screws). Note: The 2 screws in mosfet, max force 0.9N/M, more force you can break mosfet/transistor. You use screw driver tool with N/M scale, 100mN/M to 900mN/M recommended. 3. Connect in red point +48V (positive) of power supply. 4. Connect in screw point GND (negative) of power supply. 5. Install input coax cable, RG316, RG178 or similar, 50ohm coax cable. 6. Install output coax cable, RG303, RG142B or similar, 50ohm coax cable. 7. Trimmer pot, not touch if you board amplifier with mosfet installed, factory calibrated. You use this trimmer pot for board without mosfet/transistor installed or for repair amplifier. 8. Not use amplifier without dummy load or professional antena, you can break amplifier. 9. If you use Low Pass filter, the coax cable of amplifier to Low Pass filter is of 34cm or If you use direct connection without coax cable, not problem, you connect to Filter directly. You read PDF datasheet of your Low Pass Filter for notes. 10. You install Fans (more of 70CFM) in heatsink aluminium.
4 TRANSISTOR INSTALL
5 AIR FLOW DETAIL Is very important you install 1 or 2 fans in FM amplifier ( CFM). MECHANICAL Use M2 or M2.5 screws in point marked (Red point). Use M3 screws in point marked.(black point) Use special paste silicone of RF semiconductors in RF LDMOS Transistors. RF LDMOS can to die if you use bad paste silicone. Use aluminium heatsink, minimum size board. 270mm (10.4") x 100mm (4") recommended. It is necessary to use spacer nuts in M3 screws of LDMOS screws or Aluminium Heatsink mosfet. We recommended that you use 5mm copper laminate (10.2x5cm (4 x2 )) between PCB board and aluminium heatsink to dissipate heat faster LDMOS. Attention: The screws M2 or M2.5 (red points) in near side of mosfet, not short circuit with supply pads in resistors 2K21 ohm, it is very important!!!
6 RECOMMENDATIONS FOR USE NOT USE AMPLIFIER WITHOUT ANTENNA OR DUMMY LOAD CONNECTED TO THE OUTPUT OF RF. NOT USE AMPLIFIER WITH TRANSMITTER HAVING PROBLEMS TRANSMISSION, YOU CAN DAMAGE THE AMPLIFIER (TRANSISTORS INSTALLED). NOT ADVISABLE TO USE CHINESE ECONOMIC TRANSMITTERS WITH AMPLIFIER, ARE UNRELIABLE. NOT USE AMPLIFIER WITHOUT ALUMINIUM HEATSINK. NOT USE AMPLIFIER WITHOUT COPPER LAMINATE FOR HIGH POWER TRANSISTOR INSTALLED. NOT USE AMPLIFIER WITHOUT FANS. NOT USE AMPLIFIER WITHOUT ALL SCREWS INSTALLED BETWEEN PCB AND ALUMINIUM HEATSINK. NOT USE AMPLIFIER WITHOUT SCREWS INSTALLED IN AMPLIFIER TRANSISTORS. READ AIR FLOW DETAIL AND MECHANICAL RECOMMENDATIONS, PLEASE. WE RECOMMENDED USING PROFESSIONAL WATTMETER TO MEASURE POWER AMPLIFIER. ANY DOUBT, ASK IS RECOMMENDED.
7 REVISION /2017 REVISION /2015 REVISION /2014 REVISION /2013 REVISION /2012 REVISION /2011 REVISION /2011 Technologies reserves the right to make changes without further notice to any products herein. Technologies makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Technologies assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Digit@lion Technologies does not convey any license under its patent rights nor the rights of others. Digit@lion Technologies products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Digit@lion Technologies product could create a situation where personal injury or death may occur. Should Buyer purchase or use Digit@lion Technologies products for any such unintended or unauthorized application, Buyer shall indemnify and hold Digit@lion Technologies and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Digit@lion Technologies was negligent regarding the design or manufacture of the part. Digit@lion Technologies and are registered trademarks of Digitalion Technologies. WARRANTY All OEM modules have 1 year warranty in Digit@lion Technologies. The warranty not include the RF power transistor installed. Shipping Cost to our laboratory and back for a repair is not included in the warranty. This product is manufactured by Digitalion Technologies. Made in Spain. For more information of others products you send to: support@digitaliontechnologies.com
Designed for FM radio transposers and transmitters, this amplifier incorporates MOSFET transistors to enhance ruggedness and reliability.
Designed for FM radio transposers and transmitters, this amplifier incorporates MOSFET transistors to enhance ruggedness and reliability. General characteristics: 87.5-108.0 MHz. 48 Volts. Internal Bias.
ELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (I
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold
MMIC VCO MMVC92. MMIC VCO GHz Type Q. General Description. Features. Packages. Functional Diagram. Applications
8.6-9.5 GHz General Description The is designed in a highly reliable InGaP-GaAs Hetero-Junction Bipolar Transistor (HBT) process with active device, integrated resonator, tuning diode and isolating output
NSVJ3910SB3 N-Channel JFET 25V, 20 to 40mA, 40mS
NSVJ910SB N-Channel JFET 25V, 20 to 40mA, 40mS Automotive JFET designed for compact and efficient designs and including high gain performance. AEC-Q101 qualified JFET and PPAP capable suitable for automotive
Characteristic Symbol Min Typ Max Unit Instantaneous Bandwidth BW MHz Input Return Loss IRL 15 db
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The is a solid state class AB amplifier and is specifically designed for TV transposers and transmitters. This amplifier incorporates
Freescale Semiconductor, I
nc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN955/D Prepared by: Ken Dufour Motorola Power Products Division INTRODUCTION This application note describes a two stage, 30 watt VHF amplifier
Parameter Symbol Conditions Ratings Unit
Ordering number : ENN8386 Monolithic Linear IC Downconverter IC for Digital CATV http://onsemi.com Overview The is a downconverter IC for digital CATV. It accepts RF input frequencies from 50 to 150MHz
Features. Packages. Applications
8.4-9.1 GHz General Description The MMVC88 is designed in a highly reliable InGaP-GaAs Hetero-Junction Bipolar Transistor (HBT) process with active device, integrated resonator, tuning diode and isolating
N-Channel Logic Level MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters
Single stage LNA for GPS Using the MCH4009 Application Note
Single stage LNA for GPS Using the MCH49 Application Note http://onsemi.com Overview This application note explains about ON Semiconductor s MCH49 which is used as a Low Noise Amplifier (LNA) for GPS (Global
Overview The LA1225MC is a Low-voltage operation (1.8V or higher) FM IF detector IC for the electronic tuning system.
Ordering number : ENA2052 LA1225MC Monolithic Linear IC FM IF Detector IC http://onsemi.com Overview The LA1225MC is a Low-voltage operation (1.8V or higher) FM IF detector IC for the electronic tuning
ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain Source Breakdown V
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800
P D Storage Temperature Range T stg 65 to +150 C. Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θjc 1.
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed for 24 Volt UHF large signal, common emitter, class AB linear amplifier applications in industrial and commercial FM/AM equipment
434MHz LNA for RKE Using the 2SC5245A Application Note
434MHz LNA for RKE Using the 2SC5245A Application Note http://onsemi.com Overview This application note explains about ON Semiconductor s 2SC5245A which is used as a Low Noise Amplifier (LNA) for RKE (Remote
N-Channel 20-V (D-S) MOSFET
N-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) PRODUCT SUMMARY r DS(on) (mω) @ V GS =.5V @ V GS =.5V ID(A) 7..5 Typical Applications:
RF LDMOS Wideband Integrated Power Amplifier MHVIC2115R2. Freescale Semiconductor, I. The Wideband IC Line SEMICONDUCTOR TECHNICAL DATA
MOTOROLA nc. SEMICONDUCTOR TECHNICAL DATA Order this document by /D The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifier The wideband integrated circuit is designed for base station applications.
RF LDMOS Wideband 2-Stage Power Amplifiers
Technical Data RF LDMOS Wideband 2-Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance
SMA3109. MMIC Amplifier, 3V, 16mA, 0.1 to 3.6GHz, MCPH6. Features. Specifications. Low current. : ICC=16mA typ. Absolute Maximum Ratings at Ta=25 C
Ordering number : ENA1749 SMA319 MMIC Amplifier, 3V, 16mA,.1 to 3.6GHz, MCPH6 http://onsemi.com Features High Gain Wideband response Low current High output power Port impedance : Gp=23 typ. @1GHz : fu=3.6ghz
ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF20060R/D The RF Sub Micron Bipolar Line The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at
N-Channel 700-V (D-S) MOSFET
AMN7P N-Channel 7-V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed PRODUCT SUMMARY r DS(on) (Ω) ID (A) 7 @ V GS = V a VDS (V) Typical Applications:
10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 125 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS TIP141 TIP142
... designed for general purpose amplifier and low frequency switching applications. High DC Current Gain Min h FE = 1000 @ I C = 5 A, V CE = 4 V Collector Emitter Sustaining Voltage @ 30 ma V CEO(sus)
ELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Emitter Base Break
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Sub Micron Bipolar Line Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and
PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (2) RθJC 1.75 C/W. Characteristic Symbol Min Typ Max Unit
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line... designed for 13.6 volt VHF large signal class C and class AB linear power amplifier applications in commercial and industrial equipment.
P-Channel 60-V (D-S) MOSFET
AMP6-6B P-Channel 6-V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) -6 PRODUCT SUMMARY r DS(on) (mω) 6 @ V GS = -V 7 @ V GS = -4.5V ID(A)
SMA3107. MMIC Amplifier, 3V, 6mA, 0.1 to 2.8GHz, MCPH6. Features. Specifications
Ordering number : ENA1753A SMA317 MMIC Amplifier, 3V, 6mA,.1 to 2.8GHz, MCPH6 http://onsemi.com Features High Gain : Gp=23.5 typ. @1GHz Wideband response : fu=2.8ghz Low current : ICC=6mA typ. Port impedance
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
Preferred Devices PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias
N-Channel 30-V (D-S) MOSFET
AM734N N-Channel 3-V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) 3 PRODUCT SUMMARY r DS(on) (mω) @ V GS = V 3 @ V GS = 4.5V ID(A) 6 4 Typical
P-Channel 20-V (D-S) MOSFET
AM3PE P-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) - PRODUCT SUMMARY r DS(on) (mω) 8 @ V GS = -.5V @ V GS = -.5V ID (A) -5.6
THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Units
P-Channel -V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications
LA6581DM. Fan Motor Driver BLT Driver Single-Phase Full-Wave
Ordering number : ENA2264 Monolithic Linear IC Fan Motor Driver BLT Driver Single-Phase Full-Wave Overview The is a low-saturation BTL output linear driving motor driver for single-phase bipolar fan motors.
Watts W/ C Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF184/D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to
1 Block HV2 LDMOS Device Number of fingers: 56, Periphery: 5.04 mm Frequency: 1 GHz, V DS. =26 v & I DS
Number of fingers: 56, Periphery: 5.4 mm =2. ma/mm 5 ohm Termination Output Power at Fundamental vs. 4 11 Transducer Gain vs. Output Power at Fundamental 3 1-1 Transducer Gain 1 9 7 6 - -3 - -1 1 3 4 5-3
MJE15028 MJE AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON VOLTS 50 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS
... designed for use as high frequency drivers in audio amplifiers. DC Current Gain Specified to 4.0 Amperes hfe = 40 (Min) @ IC = 3.0 Adc = 20 (Min) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage
ARCHIVE INFORMATION. PCS Band RF Linear LDMOS Amplifier MHL Freescale Semiconductor. Technical Data MHL Rev. 4, 1/2005
Technical Data Rev. 4, 1/25 Replaced by N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. PCS Band
AND9518/D DAB L-band Amplifier using the NSVF4020SG4
DAB L-band Amplifier using the NSVF4020SG4 Overview This application note explains about ON Semiconductor s NSVF4020SG4 which is used as a Low Noise Amplifier (LNA) for DAB (Digital Audio Broadcast). The
Freescale Semiconductor, I
nc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1670/D Prepared by: Jean Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France INTRODUCTION This application note
N-Channel 100-V (D-S) MOSFET
AM744NA N-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) PRODUCT SUMMARY r DS(on) (mω) 5 @ V GS = V 7 @ V GS = 4.5V ID (A) 5 4 Typical
Watts W/ C Storage Temperature Range T stg 65 to +150 C Operating Junction Temperature T J 200 C. Test Conditions MRF9085SR3/MRF9085LSR3
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9085/D The RF Sub Micron MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with
PD Storage Temperature Range Tstg 65 to +150 C. Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 4.
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line... designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified
ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9318. Freescale Semiconductor. Technical Data MHL9318. Rev.
Technical Data Rev. 3, 1/2005 Replaced by N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. Cellular
EB W (PEP) AMATEUR RADIO LINEAR AMPLIFIER
MOTOROLA Order this document by EB63/D SEMICONDUCTOR ENGINEERING BULLETIN EB63 140 W (PEP) AMATEUR RADIO LINEAR AMPLIFIER 2 30 MHz The popularity of 2 30 MHz, SSB, Solid State, linear amplifiers is increasing
Characteristic Symbol Value Unit Thermal Resistance, Junction-to-Case R θjc 6 C/W
Technical Data Silicon Lateral FET, N-Channel Enhancement-Mode MOSFET Designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.
ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9838. Freescale Semiconductor. Technical Data MHL9838. Rev.
Technical Data Rev. 4, 1/2005 Replaced by N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. Cellular
PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit.
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed primarily for wideband large signal predriver stages in the MHz frequency range. Specified @.5 V, 7 MHz Characteristics Output
General Description. Applications. Power management Load switch Q2 3 5 Q1
FDG6342L Integrated Load Switch Features Max r DS(on) = 150mΩ at V GS = 4.5V, I D = 1.5A Max r DS(on) = 195mΩ at V GS = 2.5V, I D = 1.3A Max r DS(on) = 280mΩ at V GS = 1.8V, I D = 1.1A Max r DS(on) = 480mΩ
Analog Power AM3904N. Dual N-Channel Logic Level MOSFET
Dual N-Channel Logic Level MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for use
LB1939T 2 Channel H Bridge Constant Voltage/Constant Current Driver
2 Channel H Bridge Constant Voltage/Constant Current Driver Overview The is a two-phase excitation bipolar stepping motor driver that features low voltage operation, a low saturation voltage, and low power
AM3932N. Analog Power N-Channel 30-V (D-S) MOSFET. PRODUCT SUMMARY V DS (V) r DS(on) m(ω) I D (A) V GS = 4.5V V GS = 2.5V 3.
N-Channel 3-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications
ELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) ON CHARACTERISTICS Gate Threshold Voltage (V DS = 10 Vdc, I D = 100 µa) Chara
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF182/D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFETs High Gain, Rugged Device Broadband Performance from HF to 1 GHz Bottom Side Source
PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit.
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed primarily for wideband large signal predriver stages in the UHF frequency range. Specified @.5 V, 7 MHz Characteristics @ Pout
Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier
Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The is a general purpose amplifier that is internally input matched and
CPH3910. N-Channel JFET 25V, 20 to 40mA, 40mS, CPH3. Applications. Features. Specifications. For AM tuner RF amplification Low noise amplifier
Ordering number : ENA196A CPH9 N-Channel JFET V, to 4mA, 4mS, CPH http://onsemi.com Applications For AM tuner RF amplification Low noise amplifier Features VGDS: -V max. yfs : 4mS typ. Ciss: 6.pF typ.
PD Characteristic Symbol Min Typ Max Unit. V(BR)CEO 15 Vdc. V(BR)CBO 20 Vdc. V(BR)EBO 3.0 Vdc. ICBO 100 nadc. ft 4.5 GHz. Ccb
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The transistor uses the same state of the art microwave transistor chip which features fine line geometry, ion implanted arsenic emitters
SMA3117. MMIC Amplifiler, 5V, 22.7mA, 0.1 to 3GHz, MCPH6. Features. Specifications
Ordering number : EN8936A SMA3117 MMIC Amplifiler, 5V, 22.7mA,.1 to 3GHz, MCPH6 http://onsemi.com Features High Gain : Gp=33.5 typ. @2.2GHz Wideband response : fu=3.ghz Low current : ICC=22.7mA typ. High
ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9236MN. Freescale Semiconductor. Technical Data
Technical Data Cellular Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding
TIP120, TIP121, TIP122,
... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 madc VCEO(sus) = 60 Vdc
MRFIC2006. The MRFIC Line SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The MRFIC Line The is an Integrated PA designed for linear operation in the MHz to. GHz frequency range. The design utilizes Motorola s advanced MOSAIC
PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (1) at 70 C Case RθJC 7.0 C/W. Characteristic Symbol Min Typ Max Unit
SEICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The is designed for 9 Hz base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold
MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.
MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate
Low Capacitance Transient Voltage Suppressors / ESD Protectors CM QG/D. Features
Low Capacitance Transient Voltage Suppressors / ESD Protectors CM1250-04QG Features Low I/O capacitance at 5pF at 0V In-system ESD protection to ±8kV contact discharge, per the IEC 61000-4-2 international
LB11851FA. Monolithic Digital IC Microprocessor Fan Motor Interface Driver. Ordering number: ENA
Ordering number: ENA2092 Monolithic Digital IC Microprocessor Fan Motor Interface Driver http://onsemi.com Overview The provides an interface between a microcontroller motor control signal and external
PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V
NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive
NSVF5501SK RF Transistor for Low Noise Amplifier
RF Transistor for Low Noise Amplifier 10 V, 70 ma, f T =. GHz typ. RF Transistor This RF transistor is designed for RF amplifier applications. SSFP package is contribute to down size of application because
PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter
Electrical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Bre
FQD8P10TM-F085 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor s proprietary, planar stripe, DMOS technology.
P-Channel 150-V (D-S) MOSFET
AM9P P-Channel 5-V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) -5 PRODUCT SUMMARY r DS(on) (Ω). @ V GS = -V. @ V GS = -4.5V ID(A) -.9 -.8
NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package
NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Technical Data Reference Design Library Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Device Characteristics (From Device Data Sheet) Designed for broadband commercial and industrial
AM9435P. Analog Power P-Channel 30-V (D-S) MOSFET. PRODUCT SUMMARY V DS (V) r DS(on) m(ω) I D (A) V GS = -10V V GS = -4.5V -5.
P-Channel 3-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for use in power
NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface
Dual N-Channel 20-V (D-S) MOSFET
Dual N-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) PRODUCT SUMMARY r DS(on) (mω) @ V GS =.5V @ V GS =.5V ID (A) Typical Applications:
FPF1005-FPF1006 IntelliMAX TM Advanced Load Management Products
FPF5-FPF IntelliMAX TM Advanced Load Management Products Features 1. to 5.5V Input Voltage Range Typical R DS(ON) = 5mΩ @ = 5.5V Typical R DS(ON) = 55mΩ @ ESD Protected, above V HBM Applications PDAs Cell
FGH12040WD 1200 V, 40 A Field Stop Trench IGBT
FGH12040WD 1200 V, 40 A Field Stop Trench IGBT Features Maximum Junction Temperature : T J = 175 o C Positive Temperature Co-efficient for Easy Parallel Operating Low Saturation Voltage: V CE(sat) = 2.3
FQD2N90 / FQU2N90 N-Channel QFET MOSFET
FQD2N90 / FQU2N90 N-Channel QFET MOSFET 900 V, 1.7 A, 7.2 Ω Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar stripe and DMOS technology.
NSVF6003SB6/D. RF Transistor 12 V, 150 ma, ft = 7 GHz, NPN Single
NSVFSB RF Transistor 1 V, 1 ma, ft = GHz, NPN Single This RF transistor is designed for low noise amplifier applications. CPH package is suitable for use under high temperature environment because it has
NSVF4017SG4. RF Transistor for Low Noise Amplifier. 12 V, 100 ma, f T = 10 GHz typ.
RF Transistor for Low Noise Amplifier 1 V, 0 ma, f T = GHz typ. This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment
NDF10N62Z. N-Channel Power MOSFET
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant V DSS R
1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40, 60, VOLTS 30 WATTS
... designed for use in general purpose amplifier and switching applications. Compact TO220 AB package. ÎÎ MAXIMUM RATINGS TIP29 TIP29A TIP29B TIP29C Rating Symbol 9 Î TIP30 TIP30A TIP30B TIP30C Unit CollectorEmitter
NPN MPS650 PNP MPS750 MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) OFF CHARACTERISTICS
MAXIMUM RATINGS Rating Symbol MPS650 MPS750 MPS651 MPS751 Collector Emitter Voltage VCE 40 60 Vdc Collector Base Voltage VCB 60 80 Vdc Emitter Base Voltage VEB 5.0 Vdc Collector Current Continuous IC 2.0
NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88
NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable
NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors
NSTB005DXV5T, NSTB005DXV5T5 Preferred Devices Dual Common Base Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
RF LDMOS Wideband 2-Stage Power Amplifiers
Technical Data RF LDMOS Wideband 2-Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance
1. DEFINE THE SPECIFICATION 2. SELECT A TOPOLOGY
How to Choose for Design This article is to present a way to choose a switching controller for design in the s Selector Guide SGD514/D from ON Semiconductor. (http://www.onsemi.com/pub/collateral/sgd514d.pdf)
PIN Diode Dual series Pin Diode for VHF, UHF and AGC 50V, 50mA, rs=max 4.5Ω, MCP
Ordering number : EN4401B 1SV49 PIN Diode Dual series Pin Diode for VHF, UHF and AGC 0V, 0mA, rs=max 4.Ω, MCP http://onsemi.com Features Very small-sized package facilitates high-density mounting and permits
10 pf VDS=5V, VGS=0V, f=1mhz Reverse Transfer Capacitance Crss 3.0 pf Noise Figure NF VDS=5V, Rg=1kΩ, ID=1mA, f=1khz 1.5 db
SK1 N-Channel JFET 1V,. to ma, ms Applications AM Tuner RF Amp, Low-noise Amp HF Low-noise Amp Features Adoption of FBET Process Large yfs Small Ciss Very Low Noise Figure Specifications Absolute Maximum
125 C/W. Value Parameter Symbol Conditions
Power MOSFET 250V, 6.5Ω, 350mA, Single N-Channel Features On-Resistance RDS(on)1=5Ω (typ) 2.5V Drive Pb-Free, Halogen Free and RoHS Compliance ESD Diode - Protected Gate Low Ciss and High Speed Switching
MUN5311DW1T1G Series.
MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single
SCH1436. Power MOSFET 30V, 180mΩ, 1.8A, Single N-Channel
Power MOSFET 30V, 180mΩ, 1.8A, Single N-Channel This low-profile high-power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and ultra
J109 / MMBFJ108 N-Channel Switch
J9 / MMBFJ8 N-Channel Switch Features This device is designed for digital switching applications where very low on resistance is mandatory. Sourced from process 8 J9 / MMBFJ8 N-Channel Switch 3 2 TO-92
LAST ORDER 19SEP02 LAST SHIP 19MAR03 DEVICE ON LIFETIME BUY. Freescale Semiconductor, I. DUAL BAND/DUAL MODE GaAs INTEGRATED POWER AMPLIFIER
nc. Order this document by MRFIC856/D The MRFIC856 is designed for dual band subscriber equipment applications at in the cellular (800 MHz) and PCS (900 MHz) bands. The device incorporates two phemt GaAs
PD Operating Junction and Storage Temperature Range TJ, Tstg 65 to +150 C
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF4427/D The RF Line Designed for amplifier, frequency multiplier, or oscillator applications in industrial equipment constructed with surface mount
2N5194 2N for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192
... for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192 ÎÎ *MAXIMUM RATINGS ÎÎ Rating ÎÎ Symbol Î 2N5194 Î Unit ÎÎ Collector Emitter Voltage
CPH3455. Power MOSFET 35V, 104mΩ, 3A, Single N-Channel
Power MOSFET 35V, 104mΩ, 3A, Single N-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance. This
FGH40N60SFDTU-F V, 40 A Field Stop IGBT
FGH40N60SFDTU-F085 600 V, 40 A Field Stop IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) = 2.3 V @ I C = 40 A High Input Impedance Fast Switching RoHS Compliant Qualified to Automotive
ECH8659. Power MOSFET 30V, 24mΩ, 7A, Dual N-Channel
Power MOSFET 30V, 24mΩ, 7A, Dual N-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device
NJW21193G (PNP) NJW21194G (NPN) Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS
NJW21193G (PNP) NJW2119G (NPN) Silicon Power Transistors The NJW21193G and NJW2119G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
CPH6443. Power MOSFET 35V, 37mΩ, 6A, Single N-Channel
Power MOSFET 35V, 37mΩ, 6A, Single N-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance. This
MJW0281A (NPN) MJW0302A (PNP) Complementary NPN PNP Power Bipolar Transistors 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 150 WATTS
MJW28A (NPN) MJW32A (PNP) Preferred Devices Complementary NPN PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular MJW328A and MJW32A audio output transistors.
MARKING DIAGRAMS LOGIC DIAGRAM ORDERING INFORMATION DIP PIN ASSIGNMENT CDIP 16 L SUFFIX CASE 620 MC10216L AWLYYWW
The MC1016 is a high speed triple differential amplifier designed for use in sensing differential signals over long lines. The base bias supply (V BB ) is made available at pin 11 to make the device useful