APPLICATION NOTES FOR BIPHASE MODULATORS AND DSB UPCONVERTERS

Transcription

1 SECTON APPENDX2 APPLCATON NOTES FOR BPHASE MODULATORS AND DSB UPCONVERTERS The double-balanced mixer is useful for modulator and upconverter applications, but the methods and circuit balance required are somewhat different for each application. The upconverter is typically used to raise the frequency of an existing modulated signal from the VHF/UHF range into the microwave spectrum. n the process, two signals are generated above and below the applied LO or carrier signal. Carrier leakage is usually not important for the upconverter because a bandpass filter can be used to eliminate this widely separated signal. Either the or can be used to turn on the diodes depending upon whether the output harmonics of the or are important. n general, the linear signal input power is kept at least 5 db below the diode drive signal for compression levels of less than -1 db. Biphase modulator applications usually require double-balanced mixers with superior carrier rejection (LO-to- isolation). For this application, the modulation sidebands are close to the carrier and unwanted carrier leakage will introduce biphase output spectrum errors (the relationship between these variables are discussed in the and A section of this catalog). High-frequency biphase modulated signals have traditionally been generated by using a low-frequency torrid type mixer with 4 to 5 db LO-to- isolation as a narrow band modulator and a secondstage upconverter mixer/lo with any necessary filters to clean up the spectrum. Recently, better baluns and small corrective DC offset voltages have been used in the 1 or 2 GHz range to improve the isolation of double-balanced mixers so that direct (on-carrier) modulation without a separate upconverter is possible. MTE has improved the balance (-45 db) of traditional microwave mixers so that special direct on-carrier biphase modulators up to 3 GHz are possible. The model BMA14LA1MD is an example of a unit with multioctave baluns (1 to 4 GHz) yielding ±2 and ±.1 db biphase accuracy. Furthermore, data rates of DC to 1 GHz are possible with reduced accuracy. 23

2 MODULATOR PRODUCTS PSK AM MODULATORS SECTON 2 Detailed Data Sheets

3 85 TO 95 MHz, HGH-SPEED ECL, PSK MODULATOR MODEL: SMT81LC1MD (Modulation Driven) FEATURES /LO coverage to 95 MHz ECL-controlled and inputs Amplitude accuracy... ±.2 db PSK phase... ±1 Data rate... 5 Mbps Options: Series EEE-1394 Raised cosine filters "" BALANCED ECL CARRER BALANCED "" ECL -.9 VOLTS VOLTS -.9 VOLTS VOLTS -.9 VOLTS VOLTS -.9 VOLTS VOLTS OUT MODULATED APPLCATON As a result of MTE s unique high-isolation baluns and accurate hybrid couplers, it is now possible to directly modulate microwave carrier signals. This eliminates a lower frequency modulator, upconverter, sideband filter and intermediate LO. n addition, we have kept pace with recent trends to control such components with fast and seamless digital input formats. This unit accepts balanced / ECL inputs with usable data rates of 1 Mbps, thus making it suitable for testing of high data-rate communication equipment. ELECTRCAL SPECCATONS PUT PARAMETERS CONDTON UNTS M. TYP. MAX. carrier input GHz carrier level (maximum) dbm +3 VSWR 5 ohm reference Ratio 2.:1 2.5:1 Modulation input balanced ECL, / Volts TRANSFER CHARACTERSTCS CONDTON UNTS M. TYP. MAX. nsertion loss db 6 7 uadra-state phase balance Degrees ±1 ±5 uadra-state amplitude balance db ±.2 ±.25 Switching speed (5 to 9% ) ns 2 Modulation to output isolation db 3 Carrier suppression dbc 3 35 OUTPUT PARAMETERS CONDTON UNTS M. TYP. MAX. output frequency range GHz output VSWR 5 ohm reference Ratio 2.5:1 Output phase matrix (ECL voltage) PHASE UNTS Ref. Degrees Degrees V 18 Degrees V 27 Degrees 25

4 SMT81LC1MD MODULATON TYPCAL TEST DATA / MODE ( = dbm, / = balanced ECL) Graph Key Phase (Deg.) / +/+ -/+ +/- -/- RETURN LOSS (db) AMPLTUDE BALANCE (db) PUT/OUTPUT RETURN LOSS STATC AMPLTUDE ERROR LOSS (db) PHASE BALANCE (DEG.) STATC LOSS STATC PHASE ERROR MAXMUM RATGS Specifications taken at C Operating temperature to +85 C Storage temperature to +125 C GENERAL NOTES 1. Conversion loss is relative to carrier input ( dbm). 2. = dbm, / = ECL. 3. P diode for high level operation ( = +2 dbm). OUTLE DRAWG BLOCK DAGRAM OUTLE DRAWG CONNECTORS SMA FEMALE (TYP. 4 PLACES).25 BLOCK DAGRAMS.5 1. OUT R L / OUT R L / MOUNTG HOLES.1 DA. THRU (TYP. 4 PLACES)

5 .5 TO 2 GHz SGLE-SDEBAND UPCONVERTER OR / MODULATOR MODEL: SDM52LC1MD * (Modulation Driven) FEATURES output/carrier input....5 to 2 GHz Modulation bandwidth... DC to 5 MHz () Carrier input linear power... Up to +5 dbm Modulation input power to +13 dbm Sideband suppression db Carrier rejection db Modulation options: Single sideband... A (nternal hybrid) / modulator... (Separate inputs) PSK digital... SMT (TTL input) APPLCATON All modulators and SSB upconverters require that at least one of the input frequency bands (carrier or modulation) has sufficient power to turn on the semiconductors. This model employs modulation drive. All modulators yield a frequency spectrum that utilizes both sidebands on either side of the output suppressed carrier. SSB upconverters, however, employ an internal 9 hybrid to yield only one sideband output. This is offset above or below the input LO by the frequency (test data is recorded for the upper sideband only). Schottky diode (standard) modulators have the greatest speed and bandwidths, but yield output powers of typically less than dbm. P diode (optional) designs can only be driven at modulation rates of less than 3 MHz, but will yield output powers exceeding +5 dbm. This modulation driven unit is used when the input has a wide dynamic range, such as for military and commercial Doppler frequency or phase-shift generation. f desired, the harmonic distortion of the relatively fixed and higher level / drive third-order harmonics can be linearized by resistance/diode or digital ROM wave shaping techniques. (Model SME14L1D). ELECTRCAL SPECCATONS PUT PARAMETERS UNTS M. TYP. MAX. carrier input GHz.5 2 VSWR ( = -1 dbm, modulation = +1 dbm) Ratio 1.5:1 input power at 1 db compression ( = +1 dbm) dbm +5 modulation frequency range (see Note 3) MHz DC 5 modulation power range (5 ohm input) dbm TRANSFER CHARACTERSTCS UNTS M. TYP. MAX. Conversion loss (see Note 1) db 7 1 Carrier suppression dbc 3 33 Sideband suppression upconverter mode (see Note 2) Carrier fundamental dbc Carrier ±2, 4, etc. dbc 5 Carrier ±3 dbc 1 uadrature phase accuracy, / mode (see Graph Key) Degrees ±7.5 ±1 uadrature amplitude accuracy db ±1 ±1.5 OUTPUT PARAMETERS UNTS M. TYP. MAX. output frequency range GHz.5 2 output VSWR ( = +16 dbm, modulation = +1 dbm) Ratio 2.5:1 27

6 MODULATON DRVEN TYPCAL TEST DATA SDM52LC1MD / MODE ( = dbm, / = +1 dbm or ±1 ma) Graph Key Phase (Deg.) / +/+ -/+ +/- -/- AMPLTUDE BALANCE (db) PSK AMPLTUDE BALANCE (MAX./M.) PHASE BALANCE (DEG.) PSK PHASE BALANCE (MAX./M.) SDM52LC1MDC SSB UPCONVERTER ( = dbm, = +1 dbm total, = 1 MHz) Frequency fo + fo - fo fo - 2 fo + 2 fo - 3 fo + 3 (GHz) (.L., db) (dbc) (dbc) (dbc) (dbc) (dbc) (dbc) Note MAXMUM RATGS Specifications taken at C Operating temperature to +85 C Storage temperature to +125 C GENERAL NOTES 1. nsertion loss relative to dbm input. All other outputs, including fo, are relative to the desired upper (fo + fm) output. 2. Standard units with hybrids are aligned for upper sideband operation. For lower sideband or selectable sideband, contact MTE. *3. Available part numbers: SDM52LC1MD * A = 2 4 MHz B = 4 8 MHz C = 1 2 MHz = DC 5 MHz OUTLE DRAWG BLOCK DAGRAMS M/N XXXXXX S/N XXXXXX MOUNTG HOLES.1 DA. THRU (TYP. 4 PLACES) 1 OUT 2 CONNECTORS SMA FEMALE (TYP. 4 PLACES) 2. TERMATE UNUSED PORT SSB UPCONVERTER / MODULATOR SDM52LC1MDA, B and C 9 R L R L 9 SDM52LC1MD 9 R L R L LSB USB OUT OUT 28

7 .5 TO 2. GHz TTL PSK MODULATOR MODEL: SMT52LC1MD (Modulation Driven) FEATURES /LO Coverage....5 to 2. GHz TTL-controlled and inputs Amplitude accuracy... ±.5 db PSK phase accuracy... ±5 Switching speed... 3 ns Rise time... 1 ns APPLCATON MTE s model SMT52LC1MD quadrature phase-shift keying (PSK) modulator is designed for rapid digital TTLcontrol applications. For example, two channels (/) of isolated digital modulation can be transmitted in the same bandwidth as required for one biphase modulator. ELECTRCAL SPECCATONS PUT PARAMETERS CONDTON UNTS M. TYP. MAX. carrier input GHz.5 2 carrier level (maximum) dbm +3 VSWR 5 ohm reference Ratio 2.:1 2.5:1 modulation input 2 bits TTL DC power +12 volts ma volts ma 15 TRANSFER CHARACTERSTCS CONDTON UNTS M. TYP. MAX. nsertion loss db 7 1 uadra-state phase balance Degree ±5 ±1 uadra-state amplitude balance db ±.5 ±1.5 Switching speed (5% TTL to 9% ) ns 1 3 Modulation to output isolation db 25 Carrier suppression dbc OUTPUT PARAMETERS CONDTON UNTS M. TYP. MAX. output frequency range GHz.5 2 output VSWR 5 ohm reference Ratio 2.5:1 Output phase matrix TTL LEVELS PHASE UNTS Ref. Degrees 1 9 Degrees Degrees 1 27 Degrees 29

8 MODULATON DRVEN TYPCAL TEST DATA SMT52LC1MD = dbm, / = TTL +2.5 STATC AMPLTUDE BALANCE +2.5 STATC PHASE BALANCE AMPLTUDE BALANCE (DEG.) ± 9 18 PHASE BALANCE (DEG.) ± 9 / MODULATON DRVEN OUTPUT SPECTRUM OUTPUT SPECTRUM RELATVE TO CARRER +2 MHz OUTPUT Frequency fo + fo - fo fo - 2 fo + 2 fo - 3 fo + 3 (GHz) (.L., db) (dbc) (dbc) (dbc) (dbc) (dbc) (dbc) Note Worst case MAXMUM RATGS Specifications taken at C Operating temperature to +85 C Storage temperature to +125 C OUTLE DRAWG GENERAL NOTES 1. Conversion loss is relative to carrier input ( dbm). 2. = dbm, / = TTL. 3. P diode for high level operation ( = +2 dbm). BLOCK DAGRAM.3 DA. X.25 LG. (TYP. 6 PLACES) S/N XXXXXX +5VDC -15VDC OUT TTL1 TTL OUT MOUNTG HOLES.1 DA THRU (TYP. 4 PLACES).25 TTL 1 TTL V -12 V

9 1 TO 2 GHz PSK MODULATOR MODEL: SDM12LC1MD (Modulation Driven) FEATURES output/carrier input... 1 to 2 GHz Modulation bandwidth... DC to 5 MHz () Carrier linear input... Up to +5 dbm Modulation input power to +13 dbm Sideband suppression db Carrier rejection db Modulation options: PSK digital... SMT (TTL input) APPLCATON All modulators and SSB upconverters require that at least one of the input frequency bands (carrier or modulation) has sufficient power to turn on the semiconductors. This model employs modulation drive. All modulators yield a frequency spectrum that utilizes both sidebands on either side of the output suppressed carrier. SSB upconverters, however, employ an internal 9 hybrid to yield only one sideband output. This is offset above or below the input LO by the frequency (test data is recorded for the upper sideband only). Schottky diode (standard) modulators have the greatest speed and bandwidths, but yield output powers of typically less than dbm. P diode (optional) designs can only be driven at modulation rates of less than 3 MHz, but will yield output powers exceeding +5 dbm. This modulation driven unit is used when the input has a wide dynamic range, such as for military and commercial Doppler frequency or phase-shift generation. f desired, the harmonic distortion of the relatively fixed and higher level / drive third-order harmonics can be linearized by resistance/diode or digital ROM wave shaping techniques (Model SME14L1D). ELECTRCAL SPECCATONS PUT PARAMETERS UNTS M. TYP. MAX. carrier input GHz 1 2 VSWR ( = -1 dbm, modulation = +1 dbm) Ratio 1.5:1 input power at 1 db compression ( = +1 dbm) dbm +5 modulation frequency range (see Note 3) MHz DC 5 modulation current ma TRANSFER CHARACTERSTCS UNTS M. TYP. MAX. Conversion loss (see Note 1) db 6 7 Carrier suppression dbc 35 Sideband suppression (see Note 2) Carrier fundamental dbc 25 Carrier ±2, 4, etc. dbc 45 Carrier ±3 dbc 1 uadrature phase accuracy, / mode (see Graph Key) Degrees ±5 ±7 uadrature amplitude accuracy db ±.5 ±.75 OUTPUT PARAMETERS UNTS M. TYP. MAX. output frequency range GHz 1 2 output VSWR ( = +16 dbm, modulation = +1 dbm) Ratio 2.5:1 31

10 SDM12LC1MD MODULATON DRVEN TYPCAL TEST DATA / MODE ( = dbm, / = ±1 ma) Graph Key Phase (Deg.) / +/+ -/+ +/- -/- RETURN LOSS (db) PUT/OUTPUT VSWR OUTPUT PUT LOSS (db) SWTCH LOSS AMPLTUDE BALANCE (db) STATC AMPLTUDE ERROR PHASE BALANCE (DEG.) STATC PHASE ERROR MAXMUM RATGS Specifications taken at C Operating temperature to +85 C Storage temperature to +125 C GENERAL NOTES 1. Conversion loss is relative to carrier input ( dbm). 2. Relative to desired output sideband. 3. P diode for high level operation ( = +2 dbm). OUTLE DRAWG BLOCK DAGRAM 2.5 CONNECTORS SMA FEMALE (TYP. 4 PLACES) SDM12LC1MD 1. M/N XXXXXX S/N XXXXXX OUT MOUNTG HOLES.1 DA. THRU (TYP. 4 PLACES) 2. TERMATE UNUSED PORT / MODULATOR 9 R L R L OUT

11 2.7 TO 3.7 GHz SGLE-SDEBAND UPCONVERTER (OR /) MODULATOR MODEL: SM2737L6CD * (Carrier Driven) FEATURES output/carrier input to 3.7 GHz Packaging... Hermetic Linear modulation input... Up to dbm Carrier input power to +13 dbm Sideband suppression... 3 db Carrier rejection db Modulation options: Single sideband... A (nternal hybrid) / modulator... (Separate inputs) APPLCATON All modulators and SSB upconverters require that at least one of the input frequency bands (carrier or modulation) has sufficient power to turn on the semiconductors. This model employs carrier drive. All modulators yield a frequency spectrum that utilizes both sidebands on either side of the output suppressed carrier. SSB upconverters, however, employ an internal 9 hybrid to yield only one sideband output. This is offset above or below the input LO by the frequency (test data is recorded for the upper sideband only). Schottky diode (standard) modulators have the greatest speed and bandwidths, but yield output powers of typically less than dbm. Greater output power can be achieved by using higher level diodes with proportional increases in carrier power. This carrier driven unit is used when the modulation input to output must be linear (low harmonics). A typical application is for digital PSK with cosine shaped pulses (for minimum bandwidth). Many SSB upconverters also require input-to-output signal linearity, thus requiring LO drive. ELECTRCAL SPECCATONS PUT PARAMETERS UNTS M. TYP. MAX. carrier input GHz VSWR ( = +13 dbm, modulation = dbm) Ratio 1.5:1 input power (low-level diodes) dbm modulation frequency range (see Note 3) MHz DC 5 modulation power range (total /) dbm Noise +5 TRANSFER CHARACTERSTCS UNTS M. TYP. MAX. Conversion loss (see Note 1) db 6 8 Carrier suppression dbc 2 25 Sideband suppression (see Note 2) Carrier fundamental dbc 25 3 Carrier ±2, 4, etc. dbc 4 Carrier ±3 dbc 4 uadrature phase accuracy, / mode (see Graph Key) Degrees ±6 uadrature amplitude accuracy db ±.6 OUTPUT PARAMETERS UNTS M. TYP. MAX. output frequency range GHz output VSWR ( = +16 dbm, modulation = +1 dbm) Ratio 2.5:1 33

12 CARRER DRVEN TYPCAL TEST DATA SM2737L6CD Graph Key Phase (Deg.) / +/+ -/+ +/- -/- AMPLTUDE BALANCE (db) / MODE ( = +1 dbm, / = -3 dbm each input (.225 volts peak across 5 ohm load) AMPLTUDE ERROR (MAX./M.) STATC PHASE BALANCE (MAX./M.) SM2737L6CDC SSB UPCONVERTER ( = +1 dbm, = dbm total, = 2 MHz) Frequency fo + fo - fo fo - 2 fo + 2 fo - 3 fo + 3 (GHz) (.L., db) (dbc) (dbc) (dbc) (dbc) (dbc) (dbc) Note PHASE BALANCE (DEG.) MAXMUM RATGS Specifications taken at C Operating temperature to +85 C Storage temperature to +125 C GENERAL NOTES 1. nsertion loss relative to +3 dbm input. All other outputs, including fo, are relative to the desired upper (fo + fm) output. 2. Standard SSB units with hybrids are aligned for upper sideband operation. For lower sideband or selectable sideband, contact MTE. *3. Available part numbers: SM2737L6CD * A = 2 4 MHz B = 4 8 MHz C = 1 2 MHz = DC 5 MHz OUTLE DRAWG BLOCK DAGRAMS SM2737L6CDA, B and C ± R L 9 LSB HAUPPAUGE, N.Y MADE USA M/N XXXXXX S/N XXXXXX OUT SSB UPCONVERTER R L SM2737L6CD USB OUT EVACUATON TUBE OPTONAL.125 DA THRU (4 HOLES) / MODULATOR 9 R L R L OUT 34

13 1 TO 4 GHz SGLE-SDEBAND UPCONVERTER (OR /) MODULATOR MODEL: SDM14LC1MD * (Modulation Driven) FEATURES output/carrier input... 1 to 4 GHz Modulation bandwidth... DC to 5 MHz () Linear modulation input... Up to +1 dbm Carrier input power to +18 dbm Sideband suppression db Carrier rejection db Modulation options: Single sideband... A (nternal hybrid) / modulator... (Separate inputs) APPLCATON All modulators and SSB upconverters require that at least one of the input frequency bands (carrier or modulation) has sufficient power to turn on the semiconductors. This model employs modulation drive. All modulators yield a frequency spectrum that utilizes both sidebands on either side of the output suppressed carrier. SSB upconverters, however, employ an internal 9 hybrid to yield only one sideband output. This is offset above or below the input LO by the frequency (test data is recorded for the upper sideband only). Schottky diode (standard) modulators have the greatest speed and bandwidths, but yield output powers of typically less than dbm. P diode (optional) designs can only be driven at modulation rates of less than 3 MHz, but will yield output powers exceeding +5 dbm. This modulation driven unit is used when the input has a wide dynamic range, such as for military and commercial Doppler frequency or phase-shift generation. f desired, the harmonic distortion of the relatively fixed and higher level / drive third-order harmonics can be linearized by resistance/diode or digital ROM wave shaping techniques (Model SME14L1D). ELECTRCAL SPECCATONS PUT PARAMETERS UNTS M. TYP. MAX. carrier input GHz 1 4 VSWR ( = -1 dbm, modulation = +1 dbm) Ratio 1.5:1 input power at 1 db compression ( = +1 dbm) dbm +5 modulation frequency range (see Note 3) MHz DC 5 modulation power range (5 ohm input) dbm TRANSFER CHARACTERSTCS UNTS M. TYP. MAX. Conversion loss (see Note 1) db 7 1 Carrier suppression dbc 3 4 Sideband suppression upconverter mode(see Note 2) Carrier fundamental dbc Carrier ±2, 4, etc. dbc 45 Carrier ±3 dbc 1 uadrature phase accuracy, / mode (see Graph Key) Degrees ±7.5 ±1 uadrature amplitude accuracy db ±.75 ±1.5 OUTPUT PARAMETERS UNTS M. TYP. MAX. output frequency range GHz 1 4 output VSWR ( = +16 dbm, modulation = +1 dbm) Ratio 2.5:1 35

14 MODULATON DRVEN TYPCAL TEST DATA SDM14LC1MD Graph Key Phase (Deg.) / +/+ -/+ +/- -/- AMPLTUDE BALANCE (db) / MODE ( = dbm, / =+1 dbm or ±1 ma) AMPLTUDE ERROR (MAX./M.) 25 STATC PHASE BALANCE (MAX./M.) PHASE BALANCE (DEG.) SDM14LC1MDC SSB UPCONVERTER ( = dbm, = +1 dbm total, = 1 MHz) Frequency fo + fo - fo fo - 2 fo + 2 fo - 3 fo + 3 (GHz) (.L., db) (dbc) (dbc) (dbc) (dbc) (dbc) (dbc) Note MAXMUM RATGS Specifications taken at C Operating temperature to +85 C Storage temperature to +125 C GENERAL NOTES 1. nsertion loss relative to +3 dbm input. All other outputs, including fo, are relative to the desired upper (fo + fm) output. 2. Standard SSB units with hybrids are aligned for upper sideband operation. For lower sideband or selectable sideband, contact MTE. *3. Available part numbers: SDM14LC1MD * A = 2 4 MHz B = 4 8 MHz C = 1 2 MHz = DC 5 MHz OUTLE DRAWG BLOCK DAGRAMS M/N XXXXXX S/N XXXXXX MOUNTG HOLES.1 DA. THRU (TYP. 4 PLACES).25 1 OUT 2 CONNECTORS SMA FEMALE (TYP. 4 PLACES) 2. TERMATE UNUSED PORT / MODULATOR SSB UPCONVERTER SDM14LC1MDA, B and C 9 R L R L 9 R L R L 9 SDM14LC1MD LSB USB OUT OUT 36

15 3.7 TO 6.4 GHz DRECT SATELLTE / TEST MODULATOR MODEL: SDM37L1CD (Carrier Driven) FEATURES Tri-band, C Downlink to 4.2 GHz Uplink to 6.4 GHz Direct linear / modulation... DC to 3 MHz Carrier/sideband rejection db Harmonic rejection... 3 db Packaging... Hermetic APPLCATON Microwave AM signals are traditionally generated by linearly mixing or modulating a VHF or UHF carrier oscillator with band limited and information. The resulting phase and/or amplitude states of the carrier are then multiplied or upconverted by another mixer, local oscillator and sideband filter to the actual transmitted frequency. / modulation has traditionally been done in this manner because lower frequency high isolation mixers tend to yield the best carrier and sideband rejection. The latter qualities are most important for accurate / phase states or transmitted signal constellations. More recently at MTE, the electrical and physical symmetry of microwave baluns have been improved to yield mixers with LO-to- isolations of 45 db up to 18 GHz. This unit uses these mixers to achieve direct / modulation of a microwave carrier without the costly lower frequency upconversion. ELECTRCAL SPECCATONS PUT PARAMETERS CONDTON UNTS M. TYP. MAX. Carrier frequency range GHz Carrier VSWR = +16 dbm Ratio 1.5:1 Carrier power dbm Modulation frequency range / MHz DC 5 Modulation power / (5 ohms) dbm Noise +6 TRANSFER CHARACTERSTCS CONDTON UNTS M. TYP. MAX. Conversion loss ( = 1 MHz) = +1 dbm db (desired output relative to / input) / = dbm Carrier rejection (relative to desired output) db 27 3 Upper or lower sideband fo ± db Second-harmonic sideband fo ±2 db 3 45 Third-harmonic sideband fo ±3 db 35 4 nsertion loss (/ switch mode) / = +1 ma db 1 7 OUTPUT PARAMETERS CONDTON UNTS M. TYP. MAX. frequency range GHz VSWR ( = -1 dbm, LO = +1 dbm) Ratio 2.5:1 37

16 SDM37LC1CD CARRER DRVEN TYPCAL TEST DATA AMPLTUDE TRACKG ( = +16 dbm) PHASE TRACKG ( = +16 dbm) TRACKG (db) TRACKG (DEG.) fo LEVEL: +16 dbm, / LEVEL: +4 dbm (2 MHz) OUTPUT SPECTRUM RELATVE TO CARRER +2 MHz OUTPUT Frequency fo + fo - fo fo - 2 fo - 2 fo - 3 fo + 3 (GHz) (.L., db) (dbc) (dbc) (dbc) (dbc) (dbc) (dbc) Note: Upper sideband is desired output, L is relative to total / input power. MAXMUM RATGS Specifications taken at C Operating temperature to +85 C Storage temperature to +125 C GENERAL NOTE 1. Higher output power and / TTL drive circuit available. OUTLE DRAWG BLOCK DAGRAM LO CONNECTORS SMA FEMALE TYP. 4 PLACES MOUNTG HOLES.1 DA THRU TYP.4 PLACES

17 2 TO 6 GHz PSK/AM MODULATOR OR SSB UPCONVERTER MODEL: SMC26L1CD * (Carrier Driven) FEATURES output/carrier input... 2 to 6 GHz Linear modulation input... Up to +1 dbm Carrier input power to +18 dbm Sideband suppression... 3 db Carrier rejection db Options: Single sideband... A (nternal hybrid) / modulator... (Separate inputs) APPLCATON All modulators and SSB upconverters require that at least one of the input frequency bands (carrier or modulation) has sufficient power to turn on the semiconductors. This model employs carrier drive. All modulators yield a frequency spectrum that utilizes both sidebands on either side of the output suppressed carrier. SSB upconverters, however, employ an internal 9 hybrid to yield only one sideband output. This is offset above or below the input LO by the frequency (test data is recorded for the upper sideband only). Schottky diode (standard) modulators have the greatest speed and bandwidths, but yield output powers of typically less than dbm. Greater output power can be achieved by using higher level diodes with proportional increases in carrier power. This carrier driven unit is used when the modulation input to output must be linear (low harmonics). A typical application is for digital PSK with cosine shaped pulses (for minimum bandwidth). Many SSB upconverters also require input-to-output signal linearity, thus requiring LO drive. ELECTRCAL SPECCATONS PUT PARAMETERS UNTS M. TYP. MAX. carrier input GHz 2 6 VSWR ( = +13 dbm, modulation = dbm) Ratio 1.5:1 input power (low-level diodes) dbm modulation frequency range (see Note 3) MHz DC 5 modulation power range (total /) dbm Noise +13 TRANSFER CHARACTERSTCS UNTS M. TYP. MAX. Conversion loss (see Note 1) db Carrier suppression dbc Sideband suppression (see Note 2) Carrier fundamental dbc 25 3 Carrier ±2, 4, etc. dbc 65 Carrier ±3 dbc 6 uadrature phase accuracy, / mode (see Graph Key) Degrees ±4 uadrature amplitude accuracy db ±.4 OUTPUT PARAMETERS UNTS M. TYP. MAX. output frequency range GHz 2 6 output VSWR ( = +16 dbm, modulation = +1 dbm) Ratio 2.5:1 39

18 CARRER DRVEN TYPCAL TEST DATA SMC26L1CD Graph Key Phase (Deg.) / (1 V) +/+ -/+ +/- -/- / MODE ( = +16 dbm, / = +1 dbm each input (1 volt peak across 5 ohm load) STATC AMPLTUDE BALANCE STATC PHASE BALANCE AMPLTUDE BALANCE (db) REF -1-2 PHASE BALANCE (DEG.) REF SMC26L1CDA SSB UPCONVERTER ( = +16 dbm, = +13 dbm total, = 2 MHz) Frequency fo + fo - fo fo - 2 fo + 2 fo - 3 fo + 3 (GHz) (.L., db) (dbc) (dbc) (dbc) (dbc) (dbc) (dbc) Note MAXMUM RATGS Specifications taken at C Operating temperature to +85 C Storage temperature to +125 C OUTLE DRAWG GENERAL NOTES 1. nsertion loss relative to +1 dbm input. All other outputs, including fo, are relative to the desired upper (fo + fm) output. 2. Standard SSC units with hybrids are aligned for upper sideband operation. For lower sideband or selectable sideband, contact MTE. *3. Available part numbers: SMC26L1CD * BLOCK DAGRAMS A = 2 4 MHz B = 4 8 MHz C = 1 2 MHz = DC 5 MHz MOUNTG HOLES.1 DA THRU (TYP. 4 PLACES) TERMATE UNUSED PORT / MODULATOR SSB UPCONVERTER SMC26L1CDA, B and C 9 R L R L SMC26L1CD 9 R L R L 9 LSB USB OUT OUT 4

19 6.4 TO 7.4 GHz DRECT MCROWAVE DGTAL / MODULATOR MODEL: SDM6474LCD (Carrier Driven) FEATURES bandwidth to 7.4 GHz / bandwidth... DC to 1 MHz Phase accuracy... ±2 Sideband harmonics dbc Carrier rejection dbc Bit output... TTL APPLCATON This linear digital modulator accepts ±.2 volts input / Gaussian shaped pulses and provides AM with the same envelope shape. Less channel bandwidth is required when the modulation is shaped and the / phase states are also differentially coded (DPSK). nput and output buffer amplifiers are provided to ensure that generator and load mismatches do not affect quadrature accuracy and the resulting symbol error rate. ELECTRCAL SPECCATONS PUT PARAMETERS CONDTON UNTS M. TYP. MAX. Frequency range (carrier) GHz VSWR 5 ohm reference Ratio 1.5 power range dbm / frequency range (modulation) MHz DC 1 / volt range Volts / VSWR 5 ohm reference Ratio 1.5 DC current +12 V ma 15 TRANSFER CHARACTERSTCS CONDTON UNTS M. TYP. MAX. Conversion gain (relative to / inputs) = +5 dbm db 3 phase accuracy (static) / = ±.2 V, 5 ohms Degrees ±2 ±5 Sideband rejection (fo - fm) Relative dbc 25 Carrier rejection (fo) to dbc 25 3 Second-harmonic rejection (fo ± 2fm) desired dbc 3 35 Third-harmonic rejection (fo ± 3fm) sideband dbc 3 4 OUTPUT PARAMETERS CONDTON UNTS M. TYP. MAX. frequency (modulated carrier) VSWR input: +5 dbm Ratio 1.2 power (/ = +.2 volts) input: +5 dbm dbm +1 Bit voltage (/ off, / on) input: +5 dbm Volts.3 Off/On 3 41

20 SDM6474LCD CARRER DRVEN TYPCAL TEST DATA AMPLTUDE BALANCE (db) PSK AMPLTUDE BALANCE ( = +5 dbm, / = ±.2V) PHASE BALANCE (DEG.) PSK PHASE BALANCE ( = +5 dbm, / = ±.2V) DYNAMC MODULATON SPECTRUM ( level = +6 dbm, / level = +4 dbm total, = 2 MHz) Frequency fo + fo - fo fo - 2 fo + 2 fo - 3 fo + 3 (GHz) (.L., db) (dbc) (dbc) (dbc) (dbc) (dbc) (dbc) Note MAXMUM RATGS Specifications taken at C Operating temperature to +85 C Storage temperature to +125 C GENERAL NOTE 1. nsertion loss relative to dbm input. All other outputs, including fo, are relative to the desired upper (fo + fm) output. Voltage Ø (Volts) (Volts) OUTLE DRAWG BLOCK DAGRAM #2-56NC-2 THD THRU (TYP. 4 PLACES) TYP..75 TYP..3 DA X.25 LG. (TYP. 5 PLACES) LO M/N XXXXXX S/N XXXXXX HAUPPAUGE, N.Y MADE USA +5V +12V FAULT TYP TYP OUT DC BT GPO (TYP. 2 PLACES) MATERAL: KOVAR MATERAL: NCKEL 42

21 2 TO 8 GHz SGLE-SDEBAND UPCONVERTER OR / MODULATOR MODEL: SDM28LC1CD * (Carrier Driven) FEATURES output/carrier input... 2 to 8 GHz Modulation bandwidth... DC to 5 MHz () Linear modulation input... Up to +5 dbm Carrier input power to +13 dbm Sideband suppression db Carrier rejection... 2 db Modulation options: Single sideband... A (nternal hybrid) / modulator... (Separate inputs) APPLCATON All modulators and SSB upconverters require that at least one of the input frequency bands (carrier or modulation) has sufficient power to turn on the semiconductors. This model employs carrier drive. All modulators yield a frequency spectrum that utilizes both sidebands on either side of the output suppressed carrier. SSB upconverters, however, employ an internal 9 hybrid to yield only one sideband output. This is offset above or below the input LO by the frequency (test data is recorded for the upper sideband only). Schottky diode (standard) modulators have the greatest speed and bandwidths, but yield output powers of typically less than dbm. Greater output power can be achieved by using higher level diodes with proportional increases in carrier power. This carrier driven unit is used when the modulation input to output must be linear (low harmonics). A typical application is for digital PSK with cosine shaped pulses (for minimum bandwidth). Many SSB upconverters also require input-to-output signal linearity, thus requiring LO drive. ELECTRCAL SPECCATONS PUT PARAMETERS UNTS M. TYP. MAX. carrier input GHz 2 8 VSWR ( = +13 dbm, modulation = dbm) Ratio 1.5:1 input power (low-level diodes) dbm modulation frequency range (see Note 3) MHz DC 5 modulation power range (total /) dbm Noise +7 TRANSFER CHARACTERSTCS UNTS M. TYP. MAX. Conversion loss (see Note 1) db 7 1 Carrier suppression dbc 15 2 Sideband suppression (see Note 2) Carrier fundamental dbc 2 3 Carrier ±2, 4, etc. dbc 45 Carrier ±3 dbc 4 uadrature phase accuracy, / mode (see Graph Key) Degrees ±1 uadrature amplitude accuracy db ±1 OUTPUT PARAMETERS UNTS M. TYP. MAX. output frequency range GHz 2 8 output VSWR ( = -1 dbm, modulation = +1 dbm) Ratio 2.5:1 43

22 AMPLTUDE BALANCE (db) SDM28LC1CD CARRER DRVEN TYPCAL TEST DATA / MODE ( = +13 dbm, / = dbm each input (.316 volts peak across 5 ohm load) AMPLTUDE ERROR (MAX./M.) STATC PHASE BALANCE (MAX./M.) SDM28LC1CDC SSB UPCONVERTER ( = +13 dbm, = +3 dbm total, = 1 MHz) PHASE BALANCE (DEG.) Graph Key Phase (Deg.) / +/+ -/+ +/- -/- Frequency fo + fo - fo fo - 2 fo + 2 fo - 3 fo + 3 (GHz) (.L., db) (dbc) (dbc) (dbc) (dbc) (dbc) (dbc) Note MAXMUM RATGS Specifications taken at C Operating temperature to +85 C Storage temperature to +125 C OUTLE DRAWG 2.5 M/N XXXXXX S/N XXXXXX MOUNTG HOLES.1 DA. THRU (TYP. 4 PLACES) 1 OUT 2 CONNECTORS SMA FEMALE (TYP. 4 PLACES) 2. TERMATE UNUSED PORT GENERAL NOTES 1. nsertion loss relative to +3 dbm input. All other outputs, including f o, are relative to the desired upper (f o + f m ) output. 2. Standard SSB units with hybrids are aligned for upper sideband operation. For lower sideband or selectable sideband, contact MTE. * 3. Available part numbers: SDM28LC1CD * A = 2 4 MHz B = 4 8 MHz C = 1 2 MHz = DC 5 MHz SSB UPCONVERTER / MODULATOR BLOCK DAGRAMS SDM28LC1CDA, B and C 9 R L R L 9 SDM28LC1CD 9 R L R L LSB USB OUT OUT 44

23 2 TO 8 GHz SGLE-SDEBAND UPCONVERTER OR / MODULATOR MODEL: SDM28LC1MD * (Modulation Driven) FEATURES output/carrier input... 2 to 8 GHz Modulation bandwidth... DC to 5 MHz () Modulation input power to +13 dbm Sideband suppression db Carrier rejection... 3 db Modulation options: Single sideband... A (nternal hybrid) / modulator... (Separate inputs) PSK digital... SMT (TTL input) APPLCATON All modulators and SSB upconverters require that at least one of the input frequency bands (carrier or modulation) has sufficient power to turn on the semiconductors. This model employs modulation drive. All modulators yield a frequency spectrum that utilizes both sidebands on either side of the output suppressed carrier. SSB upconverters, however, employ an internal 9 hybrid to yield only one sideband output. This is offset above or below the input LO by the frequency (test data is recorded for the upper sideband only). Schottky diode (standard) modulators have the greatest speed and bandwidths, but yield output powers of typically less than dbm. P diode (optional) designs can only be driven at modulation rates of less than 3 MHz, but will yield output powers exceeding +5 dbm. This modulation driven unit is used when the input has a wide dynamic range, such as for military and commercial Doppler frequency or phase-shift generation. f desired, the harmonic distortion of the relatively fixed and higher level / drive third-order harmonics can be linearized by resistance/diode or digital ROM wave shaping techniques. ELECTRCAL SPECCATONS PUT PARAMETERS UNTS M. TYP. MAX. carrier input GHz 2 8 VSWR ( = -1 dbm, modulation = +1 dbm) Ratio 1.5:1 input power at 1 db compression ( = +1 dbm) dbm +5 modulation frequency range (see Note 3) MHz DC 5 modulation power range (5 ohm input) dbm TRANSFER CHARACTERSTCS UNTS M. TYP. MAX. Conversion loss (see Note 1) db 7 1 Carrier suppression dbc 3 Sideband suppression (see Note 2) Carrier fundamental dbc Carrier ±2, 4, etc. dbc 4 Carrier ±3 dbc 11 uadrature phase accuracy, / mode (see Graph Key) Degrees ±5 ±1 uadrature amplitude accuracy db ±.5 ±1. OUTPUT PARAMETERS UNTS M. TYP. MAX. output frequency range GHz 2 8 output VSWR ( = -1 dbm, modulation = +1 dbm) Ratio 2.5:1 45

24 MODULATON DRVEN TYPCAL TEST DATA SDM28LC1MD Graph Key Phase (Deg.) / +/+ -/+ +/- -/- / MODE ( = dbm, / = +1 dbm or ±1 ma) AMPLTUDE BALANCE (db) AMPLTUDE ERROR (MAX./M.) PHASE BALANCE (DEG.) STATC PHASE BALANCE (MAX./M.) SDM28LC1MDA SSB UPCONVERTER ( = dbm, = +1 dbm total, = 2 MHz) Frequency fo + fo - fo fo - 2 fo + 2 fo - 3 fo + 3 (GHz) (.L., db) (dbc) (dbc) (dbc) (dbc) (dbc) (dbc) Note MAXMUM RATGS Specifications taken at C Operating temperature to +85 C Storage temperature to +125 C OUTLE DRAWG GENERAL NOTES 1. nsertion loss relative to dbm input. All other outputs, including fo, are relative to the desired upper (fo + fm) output. 2. Standard units with hybrids are aligned for upper sideband operation. For lower sideband or selectable sideband, contact MTE. *3. Available part numbers: SDM28LC1MD * A = 2 4 MHz B = 4 8 MHz C = 1 2 MHz = DC 5 MHz BLOCK DAGRAMS M/N XXXXXX S/N XXXXXX MOUNTG HOLES.1 DA. THRU (TYP. 4 PLACES) 1 OUT 2 CONNECTORS SMA FEMALE (TYP. 4 PLACES) 2. TERMATE UNUSED PORT SSB UPCONVERTER / MODULATOR SDM28LC1MDA, B and C 9 R L R L 9 SDM28LC1MD 9 R L R L LSB USB OUT OUT 46

25 7.2 TO 8.4 GHz SATELLTE / TEST MODULATOR MODEL: SDM78L3CD (TR-BAND, X) FEATURES Tri-band, X Downlink to 7.7 GHz Uplink to 8.4 GHz Direct linear / modulation... DC to 3 MHz Carrier/sideband rejection db Harmonic rejection... 3 db Packaging... Hermetic APPLCATON Microwave AM signals are traditionally generated by linearly mixing or modulating a VHF or UHF carrier oscillator with band limited and information. The resulting phase and/or amplitude states of the carrier are then multiplied or upconverted by another mixer, local oscillator and sideband filter to the actual transmitted frequency. / modulation has traditionally been done in this manner because lower frequency high-isolation mixers tend to yield the best carrier and sideband rejection. The latter qualities are most important for accurate / phase states or transmitted signal constellations. More recently at MTE, the electrical and physical symmetry of microwave baluns have been improved to yield mixers with LO-to- isolations of 45 db up to 18 GHz. This unit uses these new mixers to achieve direct / modulation of a microwave carrier without the costly lower frequency upconversion. ELECTRCAL SPECCATONS PUT PARAMETERS CONDTON UNTS M. TYP. MAX. Carrier frequency range GHz Carrier VSWR = +16 dbm Ratio 1.5:1 Carrier power dbm Modulation frequency range / MHz DC 3 Modulation power / (5 ohms) dbm Noise +6 TRANSFER CHARACTERSTCS CONDTON UNTS M. TYP. MAX. Conversion loss ( = 1 MHz) = +1 dbm db (desired output relative to / input) / = dbm Carrier rejection (relative to desired output) db 3 Upper or lower sideband fo ± db Second-harmonic sideband fo ±2 db 2 Third-harmonic sideband fo ±3 db 2 nsertion loss (/ switch mode) / = +1 ma db 8 OUTPUT PARAMETERS CONDTON UNTS M. TYP. MAX. frequency range GHz VSWR ( = -1 dbm, LO = +1 dbm) Ratio 2.5:1 47

26 TYPCAL TEST DATA SDM78L3CD LOWER BAND EDGE SPECTRUM AND UPPER SDEBAND OUTPUT = +1 dbm, / = + dbm (9 / ) UPPER BAND EDGE SPECTRUM AND UPPER SDEBAND OUTPUT = +1 dbm, / = + dbm (9 / ) -2-4 FXED MKR -2.3 MHz db -2-4 FXED MKR 2. MHz db Center 7.5 GHz LOWER BAND EDGE SPECTRUM AND LOWER SDEBAND OUTPUT = +1 dbm, / = + dbm (9 / ) SPAN MHz -1 Center GHz UPPER BAND EDGE SPECTRUM AND LOWER SDEBAND OUTPUT = +1 dbm, / = + dbm (9 / ) SPAN 2. MHz -2-4 FXED MKR -2. MHz db -2-4 FXED MKR 2. MHz db Center 7.5 GHz SPAN MHz Center GHz SPAN 2. MHz MAXMUM RATGS Specifications taken at C Operating temperature to +85 C Storage temperature to +125 C GENERAL NOTES 1. nput/output amps optional. 2. Filtered digital inputs available. OUTLE DRAWG TERMATE UNUSED PORT OUT HAUPPAUGE, N.Y MADE USA M/N XXXXXX S/N XXXXXX DA. MTG. HOLE (TYP. 2 PLACES).25 TYPE SMA FELD REPLACEABLE FEMALE CONNECTOR (TYP. 4 PLACES) MATERAL: KOVAR FSH: NCKEL 48

27 FEATURES EVEN-HARMONC, SUPPRESSED CARRER MODULATOR MODEL: SML711LM8CD (Carrier Driven) Modulated output frequency range... 7 to 12 GHz Carrier input frequency to 6 GHz Carrier rejection db Linear modulation rates (/)... DC to 2 MHz 1 LO 1 Carrier power required (at 1/2 frequency) dbm LO 2 2 APPLCATON An increasingly popular design technique for digital communication exciters and receivers is to use even-harmonic mixers. The principal performance advantages are low LO reradiation for the receiver and ultra-high carrier rejection for the transmitter modulator. The latter feature is necessary to achieve low BER (bit error rates). MTE model SML711LM8 combines two 1/2 LO mixers and a 9 hybrid on one miniature drop-in substrate, thus reducing system size and LO cost. This unit is available with an integrated LO power divider or with separate individually adjustable inputs. ELECTRCAL SPECCATONS PUT PARAMETERS CONDTON UNTS M. TYP. MAX. Carrier frequency range Dual LO inputs GHz Carrier VSWR Ratio 2.5:1 Carrier power into both ports Approx. in phase dbm Modulation frequency range Linear / MHz DC 2 Modulation power into both ports 9 phase difference dbm -3 Modulation VSWR -3 dbm Ratio 2.5:1 TRANSFER CHARACTERSTCS CONDTON UNTS M. TYP. MAX. Conversion loss* 1 MHz db 9 11 (desired output relative to / input) Carrier rejection (relative to desired output) -3 dbm mod. power dbc Upper or lower sideband* Optimized at midband dbc 18 3 Second-harmonic sideband* / level dependent dbc 45 Third-harmonic sideband* / level dependent dbc 25 Other harmonic sideband* / level dependent dbc 3 OUTPUT PARAMETERS CONDTON UNTS M. TYP. MAX. frequency range GHz VSWR (output /input carrier) = -1/LO = +7 dbm Ratio 2.5:1 * Data measured with external LO and hybrid 49

28 CARRER DRVEN TYPCAL TEST DATA SML711LM8CD CARRER SUPPRESSON TYPCAL OPERATG POTS 1 db/dv. CONVERSON LOSS 8.5 db SSB SUPPRESSON 32 dbc LO 2 LO CARRER SUPPRESSON 44.8 dbc RBW 1 MHz VBW 3 khz SWP 5 ms DYNAMC MODULATON SPECTRUM (fo = +7 dbm, / = 1 MHz, dbm) Frequency fo + fo - fo fo - 2 fo + 2 fo - 3 fo + 3 (GHz) (.L., db) (dbc) (dbc) (dbc) (dbc) (dbc) (dbc) 1 db Max. 2 dbc Min. 35 dbc Min. 3 dbc Min. 3 dbc Min. 2 dbc Min. 2 dbc Min. Note Note: Upper sideband is desired output (conversion loss relative to total / power of dbm). MAXMUM RATGS Specifications taken at C Operating temperature to +85 C Storage temperature to +125 C GENERAL NOTE 1. nsertion loss is relative to lowest power input (fo or f ). All other outputs (including fo) are relative to the desired upper (fo + f ) output. OUTLE DRAWG MOUNTG DAGRAM NO 2 (TYP. 4 PLACES).45 1 MTE M/N XXXXXX S/N XXXXXX LO MAX. USERS SUBSTRATE.1 M. OUT LO 2 HOUSG MATERAL: ALUMUM FSH: NCKEL DA. THRU 4 MTG. HOLES RADUS TYP. MOUNTG DECK MACHG DATA 5

29 1 TO 15 GHz SATELLTE / TEST MODULATOR MODEL: SDM115L3CD FEATURES Tri-band, Ku Downlink to GHz Uplink to 14.5 GHz Direct linear / modulation... DC to 3 MHz Carrier/sideband rejection db Harmonic rejection... 3 db Packaging... Hermetic APPLCATON Microwave AM signals are traditionally generated by linearly mixing or modulating a VHF or UHF carrier oscillator with band limited and information. The resulting phase and/or amplitude states of the carrier are then multiplied or upconverted by another mixer, local oscillator and sideband filter to the actual transmitted frequency. / modulation has traditionally been done in this manner because lower frequency high-isolation mixers tend to yield the best carrier and sideband rejection. The latter qualities are most important for accurate / phase states or transmitted signal constellations. More recently at MTE, the electrical and physical symmetry of microwave baluns have been improved to yield mixers with LO-to- isolations of 45 db up to 18 GHz. This unit uses these new mixers to achieve direct / modulation of a microwave carrier without the costly lower frequency upconversion. ELECTRCAL SPECCATONS PUT PARAMETERS CONDTON UNTS M. TYP. MAX. Carrier frequency range GHz 1 15 Carrier VSWR = +16 dbm Ratio 1.5:1 Carrier power dbm Modulation frequency range / MHz DC 1 Modulation power / (5 ohms) dbm Noise +6 TRANSFER CHARACTERSTCS CONDTON UNTS M. TYP. MAX. Conversion loss ( = 1 MHz) = +1 dbm db 8 9 (desired output relative to / input) / = dbm Carrier rejection (relative to desired output) db 25 3 Upper or lower sideband fo ± db Second-harmonic sideband fo ±2 db 3 Third-harmonic sideband fo ±3 db 3 nsertion loss (/ switch mode) / = +1 ma db 9 OUTPUT PARAMETERS CONDTON UNTS M. TYP. MAX. frequency range GHz 1 15 VSWR ( = -1 dbm, LO = +1 dbm) Ratio 2.5:1 51

30 TYPCAL TEST DATA SDM115L3CD LOWER BAND EDGE SPECTRUM AND UPPER SDEBAND OUPUT = +1 dbm, / = + dbm (9 / ) UPPER BAND EDGE SPECTRUM AND UPPER SDEBAND OUPUT = +1 dbm, / = + dbm (9 / ) -2-4 FXED MKR -2.3 MHz db -2-4 FXED MKR 2. MHz -8.4 db Center GHz SPAN 2 MHz -1 Center GHz SPAN 2. MHz LOWER BAND EDGE SPECTRUM AND LOWER SDEBAND OUPUT = +1 dbm, / = dbm ( /9 ) UPPER BAND EDGE SPECTRUM AND LOWER SDEBAND OUPUT = +1 dbm, / = dbm ( /9 ) -2 FXED MKR -2. MHz db -2 FXED MKR 2. MHz -8.4 db Center GHz SPAN 2 MHz -1 Center GHz SPAN 2. MHz MAXMUM RATGS Specifications taken at C Operating temperature to +85 C Storage temperature to +125 C GENERAL NOTES 1. nput/output amps optional. 2. Filtered digital inputs available. OUTLE DRAWG TERMATE UNUSED PORT OUT HAUPPAUGE, N.Y MADE USA M/N XXXXXX S/N XXXXXX DA. MTG. HOLE (TYP. 2 PLACES).25 TYPE SMA FELD REPLACEABLE FEMALE CONNECTOR (TYP. 4 PLACES) MATERAL: KOVAR FSH: NCKEL 52

31 2 TO 18 GHz TTL PSK DGTAL MODULATOR MODEL: SMTO218LC1MD (Modulation Driven) FEATURES /LO coverage... 2 to 18 GHz TTL-controlled and inputs Phase accuracy... ±8 Amplitude accuracy... ±.75 db Delay time... 3 ns APPLCATON MTE s model SMT218LC1 quadrature phase-shift keying (PSK) modulators are designed for rapid digital TTL control applications. This device can be used in EW or radar simulator applications or in communication test systems. For example, two channels (/) of isolated digital modulation can be transmitted in the same bandwidth as required for one biphase modulator. ELECTRCAL SPECCATONS PUT PARAMETERS CONDTON UNTS M. TYP. MAX. carrier input GHz 2 18 carrier level (see Note 1) dbm +3 VSWR 5 ohm reference Ratio 2.5:1 modulation input 2 bits TTL DC power +12 V ma V ma 15 TRANSFER CHARACTERSTCS CONDTON UNTS M. TYP. MAX. nsertion conversion loss db 9 12 uadra-state phase balance Degrees ±8 ±15 uadra-state amplitude balance db ±.75 ±1.5 Switching speed (5% TTL to 9% ) ns 1 3 Modulation to output isolation db 25 Carrier suppression 5 ohm reference dbc OUTPUT PARAMETERS CONDTON UNTS M. TYP. MAX. output frequency range GHz 2 18 output VSWR 5 ohm reference Ratio 2.5:1 Output phase matrix TTL LEVELS PHASE UNTS Note: 8 and 12 bit TTL versions also available for smaller phase increments, such as in vector modulators. Ref. Degrees 1 9 Degrees Degrees 1 27 Degrees 53

32 SMT218LC1 MODULATON DRVEN TYPCAL TEST DATA VSWR (RATO) 6.:1 5.:1 4.:1 3.:1 2.:1 PUT/OUTPUT VSWR OUTPUT VSWR PUT VSWR PHASE BALANCE (DEG.) STATC PHASE BALANCE ( dbm ) -9 DEG. +9 DEG. 18 DEG. 1.: SERTON LOSS (18 STATE) +2.5 STATC AMPLTUDE BALANCE ( dbm ) SERTON LOSS (db) AMPLTUDE BALANCE (DEG.) DEG. +9 DEG. 18 DEG. MAXMUM RATGS Specifications taken at C Operating temperature to +85 C Storage temperature to +125 C GENERAL NOTES 1. P diodes for +2 dbm inputs. 2. Analog / inputs for AM. OUTLE DRAWG.5 1. MOUNTG HOLES.1 DA. THRU (TYP.4 PLACES) M/N XXXXXX S/N XXXXXX VDC -12VDC OUT TTL 1 TTL 2 CONNECTORS SMA FEMALE (TYP. 2 PLACES) DA. X.25 LG. (TYP. 5 PLACES)

33 6 TO 18 GHz PSK OR AM MODULATOR MODEL: SMC618L1CD * (Carrier Driven) FEATURES output/carrier input... 6 to 18 GHz Linear modulation input... Up to +1 dbm Carrier input power to +18 dbm Sideband suppression... 3 db Carrier rejection db Modulation options: Single sideband... A (nternal hybrid) / modulator... (Separate inputs) APPLCATON All modulators and SSB upconverters require that at least one of the input frequency bands (carrier or modulation) has sufficient power to turn on the semiconductors. This model employs carrier drive. All modulators yield a frequency spectrum that utilizes both sidebands on either side of the output suppressed carrier. SSB upconverters, however, employ an internal 9 hybrid to yield only one sideband output. This is offset above or below the input LO by the frequency (test data is recorded for the upper sideband only). Schottky diode (standard) modulators have the greatest speed and bandwidths, but yield output powers of typically less than dbm. Greater output power can be achieved by using higher level diodes with proportional increases in carrier power. This carrier driven unit is used when the modulation input to output must be linear (low harmonics). A typical application is for digital PSK with cosine shaped pulses (for minimum bandwidth). Many SSB upconverters also require input-to-output signal linearity, thus requiring LO drive. ELECTRCAL SPECCATONS PUT PARAMETERS UNTS M. TYP. MAX. carrier input GHz 6 18 VSWR ( = +13 dbm, modulation = dbm) Ratio 1.5:1 input power (low-level diodes) dbm modulation frequency range (see Note 3) MHz DC 5 modulation power range (total /) dbm Noise TRANSFER CHARACTERSTCS UNTS M. TYP. MAX. Conversion loss (see Note 1) db Carrier suppression (see Note 4) dbc Sideband suppression (see Note 2) Undesired sideband (see Note 4) dbc Carrier ±2, 4, etc. dbc 4 6 Carrier ±3 dbc 4 45 uadrature phase deviation, / mode (see Graph Key) Degrees ±5 uadrature amplitude deviation db ±.5 OUTPUT PARAMETERS UNTS M. TYP. MAX. output frequency range GHz 6 18 output VSWR ( = +16 dbm, modulation = +1 dbm) Ratio 2.1:1 55