FOD2711A Optically Isolated Error Amplifier

Size: px
Start display at page:

Download "FOD2711A Optically Isolated Error Amplifier"

Transcription

1 FODA Optically Isolated Error Amplifier Features Optocoupler, precision reference and error amplifier in single package.4v ± % reference CTR % to %,V RMS isolation UL approval E9, Volume Applications Power supplies regulation DC to DC converters Description June The FODA Optically Isolated Amplifier consists of the popular AZ4L precision programmable shunt reference and an optocoupler. The optocoupler is a gallium arsenide (GaAs) light emitting diode optically coupled to a silicon phototransistor. The reference voltage tolerance is %. The current transfer ratio (CTR) ranges from % to %. It is primarily intended for use as the error amplifier/ reference voltage/optocoupler function in isolated AC to DC power supplies and dc/dc converters. When using the FODA, power supply designers can reduce the component count and save space in tightly packaged designs. The tight tolerance reference eliminates the need for adjustments in many applications. The device comes in a -pin dip white package. Functional Bock Diagram Package Outlines NC LED C FB E COMP NC 4 GND FODA Rev...

2 Pin Definitions Pin Number Pin Name Pin Description NC Not connected C Phototransistor Collector E Phototransistor Emitter 4 NC Not connected GND Ground COMP Error Amplifier Compensation. This pin is the output of the error amplifier.* FB Voltage Feedback. This pin is the inverting input to the error amplifier LED Anode LED. This pin is the input to the light emitting diode. *The compensation network must be attached between pins and. Typical Application V FAN4 PWM Control V O FODA R R FODA Rev...

3 Absolute Maximum Ratings (T A = C unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Value Units T STG Storage Temperature -4 to + C T OPR Operating Temperature -4 to + C T SOL Lead Solder Temperature for sec. C V LED Input Voltage. V I LED Input DC Current ma V CEO Collector-Emitter Voltage V V ECO Emitter-Collector Voltage V I C Collector Current ma PD Input Power Dissipation () 4 mw PD Transistor Power Dissipation () mw PD Total Power Dissipation () 4 mw Notes:. Derate linearly from C at a rate of.4mw/ C. Derate linearly from C at a rate of.4mw/ C.. Derate linearly from C at a rate of.4mw/ C. FODA Rev...

4 Electrical Characteristics (T A = C unless otherwise specified) Input Characteristics Symbol Parameter Test Conditions Min. Typ.* Max. Unit T = -4 to + C 4 mv V F LED Forward Voltage I LED = ma, V COMP = V FB (Fig. ). V V REF Reference Voltage V COMP = V FB, I LED = ma (Fig.) -4 C to + C..9 V C..4. V REF (DEV) Deviation of V REF Over Temperature (4) A V REF / V COMP Ratio of Vref Variation to the Output of the Error Amplifier I LED = ma, V COMP = V REF to V (Fig. ) mv/v I REF Feedback Input Current I LED = ma, R = kω (Fig. ).. µa I REF (DEV) Deviation of I REF Over T A = -4 C to + C.. µa Temperature (4) I LED (MIN) Minimum Drive Current V COMP = V FB (Fig. ) µa I (OFF) Off-State Error Amplifier Current V LED = V, V FB = (Fig. 4).. µa Z OUT Error Amplifier Output Impedance () V COMP = V FB, I LED =.ma to ma, f< khz). Ω Output Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit I CEO Collector Dark Current V CE = V (Fig. ) na BV ECO Emitter-Collector Voltage Breakdown I E = µa V BV CEO Collector-Emitter Voltage Breakdown I C =.ma V Transfer Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit CTR Current Transfer Ratio I LED = ma, V COMP = V FB, V CE = V (Fig. ) V CE (SAT) Collector-Emitter Saturation I LED = ma, V COMP = V FB, Voltage I C =.ma (Fig. ) %.4 V Notes: 4. The deviation parameters V REF(DEV) and I REF(DEV) are defined as the differences between the maximum and minimum values obtained over the rated temperature range. The average full-range temperature coefficient of the reference input voltage, V REF, is defined as: V REF ( ppm/ C) { V REF( DEV) /V REF ( T A = C) } = T A where T A is the rated operating free-air temperature range of the device.. The dynamic impedance is defined as Z OUT = V COMP / I LED. When the device is operating with two external resistors (see Figure ), the total dynamic impedance of the circuit is given by: Z OUT, TOT = V Z I OUT + R R FODA Rev... 4

5 Electrical Characteristics (Continued) (T A = C unless otherwise specified) Isolation Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit I I-O Input-Output Insulation Leakage Current RH = 4%, T A = C, t = s,. µa V I-O = VDC () V ISO Withstand Insulation Voltage RH %, T A = C, t = min. () Vrms R I-O Resistance (Input to Output) V I-O = VDC () Ω Switching Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit BW Bandwidth (Fig. ) khz CMH Common Mode Transient I LED = ma, Vcm = V PP,. kv/µs Immunity at Output HIGH R L =.kω () (Fig. ) CML Common Mode Transient Immunity at Output LOW I LED = ma, Vcm = V PP, R L =.kω () (Fig. ). kv/µs Notes:. Device is considered as a two terminal device: Pins,, and 4 are shorted together and Pins,, and are shorted together.. Common mode transient immunity at output high is the maximum tolerable (positive) dvcm/dt on the leading edge of the common mode impulse signal, Vcm, to assure that the output will remain high. Common mode transient immunity at output low is the maximum tolerable (negative) dvcm/dt on the trailing edge of the common pulse signal,vcm, to assure that the output will remain low. FODA Rev...

6 Test Circuits I (LED) V F V V REF Figure. V REF, V F, I LED (min.) Test Circuit I (LED) V I (LED) R V COMP R V REF Figure. V REF / V COMP Test Circuit I (OFF) V I REF R V V (LED) Figure. I REF Test Circuit Figure 4. I (OFF) Test Circuit I CEO I (LED) I C V CE V CE V V COMP V REF Figure. I CEO Test Circuit Figure. CTR, V CE(sat) Test Circuit FODA Rev...

7 Test Circuits (Continued) V CC = +V DC R L V OUT 4 I F = ma µf. V PP Figure. Frequency Response Test Circuit 4Ω V IN.4V V CC = +V DC I F = ma (A) I F = ma (B) R.kΩ V OUT A B 4 _ VCM + V P-P Figure. CMH and CML Test Circuit FODA Rev...

8 Typical Performance Curves VREF REFERENCE VOLTAGE (V) ILED SUPPLY CURRENT (ma) - - Fig. Reference Voltage vs. Ambient Temperature.44 ILED = ma Fig. 9a LED Current vs. Cathode Voltage T A = C V COMP = VFB V COMP CATHODE VOLTAGE (V) ILED SUPPLY CURRENT (ma) IREF REFERENCE CURRENT (na) - - Fig. 9b LED Current vs. Cathode Voltage T A = C VCOMP = VFB - - V COMP CATHODE VOLTAGE (V) Fig. Reference Current vs. Ambient Temperature 4 4 I LED = ma R = kω T A AMBIENT TEMPERATURE ( C) -4-4 T A AMBIENT TEMPERATURE ( C) Fig. Off-State Current vs. Ambient Temperature VCC =.V Fig. Forward Current vs. Forward Voltage IOFF OFF-STATE CURRENT (NA) IF FORWARD CURRENT (ma) C C C T A AMBIENT TEMPERATURE ( C) V F FORWARD VOLTAGE (V) FODA Rev...

9 Typical Performance Curves (Continued) ICEO DARK CURRENT (na) (IC/IF) CURRENT TRANSFER RATIO (%) Fig. 4 Dark Current vs. Ambient Temperature V CE = V T A AMBIENT TEMPERATURE ( C) Fig. Current Transfer Ratio vs. LED Current V CE = V C C C I LED FORWARD CURRENT (ma) VCE(SAT) SATURATION VOLTAGE (V) IC COLLECTOR CURRENT (ma) Fig. Collector Current vs. Ambient Temperature V CE = V I LED = ma I LED = ma I LED = ma I LED = ma 4 9 T A AMBIENT TEMPERATURE ( C) Fig. Saturation Voltage vs. Ambient Temperature T A AMBIENT TEMPERATURE ( C) Fig. Collector Current vs. Collector Voltage Fig. 9 Rate of Change Vref to Vcomp vs. Temperature IC COLLECTOR CURRENT (ma) T A = C I LED = ma I LED = ma I LED = ma I LED = ma 4 9 V CE COLLECTOR-EMITTER VOLTAGE (V) DELTA VREF / DELTA VCOMP ( mv/v) TEMPERATURE ( C) FODA Rev... 9

10 Typical Performance Curves (Continued) VOLTAGE GAIN (db) Fig. Voltage Gain vs. Frequency V CC = V I F = ma R L = kω R L = Ω R L = Ω. FREQUENCY (khz) FODA Rev...

11 The FODA The FODA is an optically isolated error amplifier. It incorporates three of the most common elements necessary to make an isolated power supply, a reference voltage, an error amplifier, and an optocoupler. It is functionally equivalent to the popular AZ4L shunt voltage regulator plus the CNYF- optocoupler. Powering the Secondary Side The LED pin in the FODA powers the secondary side, and in particular provides the current to run the LED. The actual structure of the FODA dictates the minimum voltage that can be applied to the LED pin: The error amplifier output has a minimum of the reference voltage, and the LED is in series with that. Minimum voltage applied to the LED pin is thus.4v +.V =.4V. This voltage can be generated either directly from the output of the converter, or else from a slaved secondary winding. The secondary winding will not affect regulation, as the input to the FB pin may still be taken from the output winding. The LED pin needs to be fed through a current limiting resistor. The value of the resistor sets the amount of current through the LED, and thus must be carefully selected in conjunction with the selection of the primary side resistor. Feedback Output voltage of a converter is determined by selecting a resistor divider from the regulated output to the FB pin. The FODA attempts to regulate its FB pin to the reference voltage,.4v. The ratio of the two resistors should thus be: R TOP = R BOTTOM V OUT V REF The absolute value of the top resistor is set by the input offset current of.µa. To achieve % accuracy, the resistance of R TOP should be: V OUT > µa R TOP Compensation The compensation pin of the FODA provides the opportunity for the designer to design the frequency response of the converter. A compensation network may be placed between the COMP pin and the FB pin. In typical low-bandwidth systems, a.µf capacitor may be used. For converters with more stringent requirements, a network should be designed based on measurements of the system s loop. An excellent reference for this process may be found in Practical Design of Power Supplies by Ron Lenk, IEEE Press, 99. Secondary Ground The GND pin should be connected to the secondary ground of the converter. No Connect Pins The NC pins have no internal connection. They should not have any connection to the secondary side, as this may compromise the isolation structure. Photo-Transistor The Photo-transistor is the output of the FODA. In a normal configuration the collector will be attached to a pull-up resistor and the emitter grounded. There is no base connection necessary. The value of the pull-up resistor, and the current limiting resistor feeding the LED, must be carefully selected to account for voltage range accepted by the PWM IC, and for the variation in current transfer ratio (CTR) of the opto-isolator itself. Example: The voltage feeding the LED pins is +V, the voltage feeding the collector pull-up is +V, and the PWM IC is the Fairchild KAH, which has a V reference. If we select a KΩ resistor for the LED, the maximum current the LED can see is: (V.4V) / kω = 9µA. The CTR of the opto-isolator is a minimum of %, and so the minimum collector current of the photo-transistor when the diode is full on is also 9µA. The collector resistor must thus be such that: V V < 9 µa or R R COLLECTOR >.4KΩ; COLLECTOR select kω to allow some margin. FODA Rev...

12 Package Dimensions Through Hole SEATING PLANE. (.).4 (.). (.). (.4) 4 Surface Mount.9 (9.9). (9.4). (.4) TYP PIN ID.. (.). (.). (.).4 (.4).4 (.9). (.). (.) MIN. (.4). (.) MAX. (.) TYP.4" Lead Spacing SEATING PLANE. (.).4 (.). (.). (.4) 4.9 (9.9). (9.4). (.4) TYP PIN ID. -Pin DIP Land Pattern. (.). (.). (.).4 (.4).4 (.9). (.).4 (.) MIN. (.4). (.) to.4 (.) TYP 4.9 (9.9). (9.4) PIN ID.. (.). (.). (.). (.). (.).4 (.4). (.) TYP.4 (.4).9 (.49). (.4). (.). (.) MIN. (.4). (.). (.). (.4). (.4) TYP Lead Coplanarity :.4 (.) MAX.4 (.4). (.) MIN.4 (.) MAX. Note: All dimensions are in inches (millimeters) FODA Rev...

13 Ordering Information Option Example Part Number Description No Option FODA Standard Through Hole S FODAS Surface Mount Lead Bend SD FODASD Surface Mount; Tape and Reel T FODAT.4" Lead Spacing V FODAV VDE4 TV FODATV VDE4;.4 Lead Spacing SV FODASV VDE4; Surface Mount SDV FODASDV VDE4; Surface Mount; Tape and Reel Marking Information A V XX YY B 4 Definitions Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option See order entry table) 4 Two digit year code, e.g., Two digit work week ranging from to Assembly package code FODA Rev...

14 Carrier Tape Specifications D P P t K E F A W W B d User Direction of Feed P D Symbol Description Dimension in mm W Tape Width. ±. t Tape Thickness. ±. P Sprocket Hole Pitch 4. ±. D Sprocket Hole Diameter. ±. E Sprocket Hole Location. ±. F Pocket Location. ±. P 4. ±. P Pocket Pitch. ±. A Pocket Dimensions. ±. B. ±. K 4.9 ±. W Cover Tape Width. ±. d Cover Tape Thickness. max Max. Component Rotation or Tilt R Min. Bending Radius Reflow Profile Temperature ( C) 4 C, s C peak Time above C, < sec Ramp up = C/sec Time (Minute) Peak reflow temperature: C (package surface temperature) Time of temperature higher than C for seconds or less One time soldering reflow is recommended FODA Rev... 4

15 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries,and is not intended to be an exhaustive list of all such trademarks. AccuPower Auto-SPM Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficientMax n ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FlashWriter * FPS F-PFS FRFET Global Power Resource SM Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak MillerDrive MotionMax Motion-SPM OptoHiT OPTOLOGIC OPTOPLANAR PDP SPM Power-SPM PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, mw/w/kw at a time SignalWise SmartMax SMART START SPM STEALTH SuperFET SuperSOT - SuperSOT - SuperSOT - SupreMOS SyncFET Sync-Lock * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. * The Power Franchise TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TriFault Detect TRUECURRENT * " SerDes UHC Ultra FRFET UniFET VCX VisualMax XS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOESIT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on ourexternal website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers fromthe proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Product Status Identification Advance Information Preliminary No Identification Needed Obsolete Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I49 FODA Rev...

OPTICALLY ISOLATED ERROR AMPLIFIER FOD2711 DESCRIPTION FEATURES APPLICATIONS PIN DEFINITIONS 9/6/02

OPTICALLY ISOLATED ERROR AMPLIFIER FOD2711 DESCRIPTION FEATURES APPLICATIONS PIN DEFINITIONS 9/6/02 DESCRIPTION The Optically Isolated Amplifier consists of the popular RC4A precision programmable shunt reference and an optocoupler. The optocoupler is a gallium arsenide (GaAs) light emitting diode optically

More information

Distributed by: www.jameco.com -800-8- The content and copyrights of the attached material are the property of its owner. DESCRIPTION The FOD Optically Isolated Amplifier consists of the popular KA precision

More information

SEATING PLANE FUNCTIONAL BLOCK DIAGRAM 8 LED

SEATING PLANE FUNCTIONAL BLOCK DIAGRAM 8 LED DESCRIPTION The Optically Isolated Amplifier consists of the popular RC41A precision programmable shunt reference and an optocoupler. The optocoupler is a gallium arsenide (GaAs) light emitting diode optically

More information

MOC70P1, MOC70P2, MOC70P3 Phototransistor Optical Interrupter Switch

MOC70P1, MOC70P2, MOC70P3 Phototransistor Optical Interrupter Switch MOC7P, MOC7P2, MOC7P3 Phototransistor Optical Interrupter Switch Features No contact sensing 5mm gap.4 aperture Low profile PCB mount Transistor output Package Dimensions.25 [6.35].53 [3.89] 2X C L.5 [2.95].56

More information

KSD1621 NPN Epitaxial Silicon Transistor

KSD1621 NPN Epitaxial Silicon Transistor KSD62 NPN Epitaxial Silicon Transistor Features High Current Driver Applications Low Collector-Emitter Saturation Voltage Large Current Capacity and Wide SOA Fast Switching Speed Complement to KSB2 Marking

More information

KSA473 PNP Epitaxial Silicon Transistor

KSA473 PNP Epitaxial Silicon Transistor KSA473 PNP Epitaxial Silicon Transistor Features Low Frequency Power Amplifier, Power Regulator Collector Current : = -3A Collector Dissipation : P C = 10W (T C =25 C) Complement to KSC1173 August 2009

More information

FJN4303R PNP Epitaxial Silicon Transistor with Bias Resistor

FJN4303R PNP Epitaxial Silicon Transistor with Bias Resistor FJN4303R PNP Epitaxial Silicon Transistor with Bias Resistor Features 100 ma Output Current Capability Built-in Bias Resistor (R 1 = 22 kω, R 2 = 22 kω) Application Switching, Interface, and Driver Circuits

More information

2N6517 NPN Epitaxial Silicon Transistor

2N6517 NPN Epitaxial Silicon Transistor 2N657 NPN Epitaxial Silicon Transistor Features High oltage Transistor Collector Dissipation: P C (max) = 625mW Complement to 2N6520 Suffix -C means Center Collector (. Emitter 2. Collector 3. Base) Absolute

More information

LL4148 Small Signal Diode

LL4148 Small Signal Diode LL4148 Small Signal Diode Cathode Band COLOR BAND MARKING 1ST BAND Black April 2013 SOD80 The 1st Band indicates the cathode band Package Marking and Ordering Information Device Marking Device Package

More information

HSR312, HSR312L, HSR412, HSR412L Photovoltaic Solid-State Relay Optocouplers

HSR312, HSR312L, HSR412, HSR412L Photovoltaic Solid-State Relay Optocouplers HSR32, HSR32L, HSR42, HSR42L Photovoltaic Solid-State Relay Optocouplers Features 4,000 VRMS Isolation Wide operating voltage range 250V (HSR32, HSR32L) 400V (HSR42, HSR42L) Solid-State Reliability Bounce-Free

More information

2N7002W N-Channel Enhancement Mode Field Effect Transistor

2N7002W N-Channel Enhancement Mode Field Effect Transistor 2N7002W N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface

More information

FGD V PDP Trench IGBT

FGD V PDP Trench IGBT FGD4536 360 V PDP Trench IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) = 1.59 V @ I C = 50 A High Input Impedance Fast Switching RoHS Compliant Applications PDP TV, Consumer Appliances

More information

KSP2222A NPN General-Purpose Amplifier

KSP2222A NPN General-Purpose Amplifier KSP2222A NPN General-Purpose Amplifier Features Collector-Emitter Voltage: V CEO = 40 V Available as PN2222A November 2014 TO-92 1 2 3 1. Emitter 2. Base 3. Collector Ordering Information Part Number Marking

More information

BAT54HT1G Schottky Barrier Diodes

BAT54HT1G Schottky Barrier Diodes BAT54HT1G Schottky Barrier Diodes 1 A2 Connection Diagram 1 July 2013 SOD-323 2 2 Ordering Information Part Number Marking Package Packing Method BAT54HT1G A2 SOD-323 2L Tape and Reel Absolute Maximum

More information

Part Number Top Mark Package Packing Method

Part Number Top Mark Package Packing Method KSA3 PNP Epitaxial Silicon Transistor Features Color TV Audio Output Color TV Vertical Deflection Output September 203 TO-92L. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package

More information

KA431S / KA431SA / KA431SL Programmable Shunt Regulator

KA431S / KA431SA / KA431SL Programmable Shunt Regulator / A / L Programmable Shunt Regulator Features Programmable Output Voltage to 36 V Low Dynamic Output Impedance.2 Ω (Typical) Sink Current Capability: 1. to 1 ma Equivalent Full-Range Temperature Coefficient

More information

FOD852 4-Pin High Operating Temperature Photodarlington Optocoupler

FOD852 4-Pin High Operating Temperature Photodarlington Optocoupler FOD852 4-Pin High Operating Temperature Photodarlington Optocoupler Features Applicable to Pb-free IR reflow soldering Compact 4-pin package High current transfer ratio: % minimum C-UL, UL, and VDE approved

More information

J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier

J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier J / J / MMBFJ / MMBFJ N-Channel RF Amplifier Features This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 db at 100 MHz and 12 db at 450 MHz

More information

KSC1815 NPN Epitaxial Silicon Transistor

KSC1815 NPN Epitaxial Silicon Transistor KSC85 NPN Epitaxial Silicon Transistor Features Audio Frequency Amplifier & High Frequency OSC Complement to KSA5 Collector-Base Voltage: V CBO = 50 V TO-92 April 203. Emitter 2. Collector 3. Base Ordering

More information

MJD44H11 NPN Epitaxial Silicon Transistor

MJD44H11 NPN Epitaxial Silicon Transistor MJD44H11 NPN Epitaxial Silicon Transistor General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications Load Formed for Surface Mount Application

More information

FJB102 NPN High-Voltage Power Darlington Transistor

FJB102 NPN High-Voltage Power Darlington Transistor FJB102 NPN High-Voltage Power Darlington Transistor Features High DC Current Gain : h FE = 0 at = 4 V, = 3 A (Minimum) Low Collector-Emitter Saturation Voltage 1 D 2 -PAK 1.Base 2.Collector 3.Emitter B

More information

FGD V, PDP IGBT

FGD V, PDP IGBT FGD4536 36V, PDP IGBT Features High Current Capability Low Saturation Voltage: V CE (sat) =.59 V @ I C = 5 A High Input Impedance Fast Switching RoHS Compliant Application PDP System General Description

More information

FDH / FDLL 300 / A / 333 High Contraction Low Leakage Diode

FDH / FDLL 300 / A / 333 High Contraction Low Leakage Diode FDH / FDLL 300 / A / 333 High Contraction Low Leakage Diode DO-35 Cathode is denoted with a black band Cathode Band LL-34 SOD80 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF

More information

FJA13009 High-Voltage Switch Mode Application

FJA13009 High-Voltage Switch Mode Application FJA3009 High-Voltage Switch Mode Application Features High-Speed Switching Suitable for Switching Regulator and Motor Control Ordering Information July 203 Part Number Marking Package Packing Method FJA3009TU

More information

FOD814 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

FOD814 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers FOD84 Series, Series 4-Pin High Operating Temperature Phototransistor Optocouplers Features AC input response (FOD84 only) Applicable to Pb-free IR reflow soldering Compact 4-pin package Current transfer

More information

BC638 PNP Epitaxial Silicon Transistor

BC638 PNP Epitaxial Silicon Transistor BC638 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications Complement to BC637 TO-92 1 1. Emitter 2. Collector 3. Base March 2009 Absolute Maximum Ratings T a = 25 C unless otherwise noted

More information

TIP47 / TIP48 / TIP49 / TIP50 NPN Silicon Transistor

TIP47 / TIP48 / TIP49 / TIP50 NPN Silicon Transistor TIP47 / TIP48 / TIP49 / TIP50 NPN Silicon Transistor Features High-Voltage and Switching Applications High Sustaining Voltage: V CEO (sus) = 250 V, 300 V, 350 V, 400 V 1 A Rated Collector Current Ordering

More information

TIP147T PNP Epitaxial Silicon Darlington Transistor

TIP147T PNP Epitaxial Silicon Darlington Transistor TIP147T PNP Epitaxial Silicon Darlington Transistor Features Monolithic Construction with Built-in Base-Emitter Shunt Resistors High DC Current Gain: h FE = 1000 at = -4 V, = -5 A (Minimum) Industrial

More information

BC327 PNP Epitaxial Silicon Transistor

BC327 PNP Epitaxial Silicon Transistor BC327 PNP Epitaxial Silicon Transistor Features Switching and Amplifier Applications Suitable for AF-Driver Stages and Low-Power Output Stages Complement to BC337 / BC338 October 2014 1 TO-92 1. Collector

More information

BSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor

BSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor December 2010 BSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistor. These products have been designed to minimize

More information

1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Small Signal Diode

1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Small Signal Diode 1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Small Signal Diode DO-35 Cathode is denoted with a black band LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL

More information

BAV103 High Voltage, General Purpose Diode

BAV103 High Voltage, General Purpose Diode BAV3 High Voltage, General Purpose Diode Cathode Band SOD80 Description April 2013 A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass

More information

FJV3105R NPN Epitaxial Silicon Transistor with Bias Resistor

FJV3105R NPN Epitaxial Silicon Transistor with Bias Resistor FJV3105R NPN Epitaxial Silicon Transistor with Bias Resistor Features 100 ma Output Current Capability Built-in Bias Resistor (R 1 = 4.7 kω, R 2 = 10 kω) Application Switching, Interface, and Driver Circuits

More information

MOCD213M Dual Channel Phototransistor Small Outline Surface Mount Optocouplers

MOCD213M Dual Channel Phototransistor Small Outline Surface Mount Optocouplers MOCD23M Dual Channel Phototransistor Small Outline Surface Mount Optocouplers Features U.L. recognized (File #E90700, Volume 2) VDE recognized (File #3666) (add option V for VDE approval, i.e, MOCD23VM)

More information

FYP2010DN Schottky Barrier Rectifier

FYP2010DN Schottky Barrier Rectifier FYP20DN Schottky Barrier Rectifier Features Low forward voltage drop High frequency properties and switching speed Guard ring for over-voltage protection.anode August 2009 FYP20DN Schottky Barrier Rectifier

More information

KA431S / KA431SA / KA431SL Programmable Shunt Regulator

KA431S / KA431SA / KA431SL Programmable Shunt Regulator / A / L Programmable Shunt Regulator Features Programmable Output Voltage to 36 V Low Dynamic Output Impedance.2 Ω (Typical) Sink Current Capability: 1. to 1 ma Equivalent Full-Range Temperature Coefficient

More information

J105 / J106 / J107 N-Channel Switch

J105 / J106 / J107 N-Channel Switch J105 / J106 / J107 N-Channel Switch Description This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 59. September 2013 Ordering

More information

2N6520 PNP Epitaxial Silicon Transistor

2N6520 PNP Epitaxial Silicon Transistor 2N6520 PNP Epitaxial Silicon Transistor Features High oltage Transistor Collector-Emitter oltage: CBO = -350 Collector Dissipation: P C (max)=625mw Complement to 2N6517 Absolute Maximum Ratings* T A =

More information

MID400 AC Line Monitor Logic-Out Device

MID400 AC Line Monitor Logic-Out Device MID400 AC Line Monitor Logic-Out Device Features Direct operation from any line voltage with the use of an external resistor. Externally adjustable time delay Externally adjustable AC voltage sensing level

More information

FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers FOD84 Series, FOD67 Series, FOD87 Series 4-Pin High Operating Temperature Phototransistor Optocouplers Features AC input response (FOD84 only) Applicable to Pb-free IR reflow soldering Compact 4-pin package

More information

1N4934-1N4937 Fast Rectifiers

1N4934-1N4937 Fast Rectifiers N4934 - N4937 Fast Rectifiers Features Low Forward Voltage Drop High Surge Current Capability High Reliability High Current Capability DO-4 COLOR BAND DENOTES CATHODE January 25 N4934 - N4937 Fast Rectifiers

More information

BC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor

BC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor BC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor Features Switching and Amplifier High-Voltage: BC556, V CEO = -65 V Low-Noise: BC559, BC560 Complement to BC546, BC547, BC548, BC549,

More information

FJP13007 High Voltage Fast-Switching NPN Power Transistor

FJP13007 High Voltage Fast-Switching NPN Power Transistor FJP3007 High Voltage Fast-Switching NPN Power Transistor Features High Voltage High Speed Power Switch Application High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching

More information

FJP13009 High-Voltage Fast-Switching NPN Power Transistor

FJP13009 High-Voltage Fast-Switching NPN Power Transistor FJP3009 High-Voltage Fast-Switching NPN Power Transistor Features High-Voltage Capability High Switching Speed Applications Electronic Ballast Switching Regulator Motor Control Switched Mode Power Supply

More information

H11AA1M, H11AA2M, H11AA3M, H11AA4M AC Input/Phototransistor Optocouplers

H11AA1M, H11AA2M, H11AA3M, H11AA4M AC Input/Phototransistor Optocouplers HAAM, HAA2M, HAA3M, HAA4M AC Input/Phototransistor Optocouplers Features Bi-polar emitter input Built-in reverse polarity input protection Underwriters Laboratory (UL) recognized File #E90700, Volume 2

More information

TIP102 NPN Epitaxial Silicon Darlington Transistor

TIP102 NPN Epitaxial Silicon Darlington Transistor TIP102 NPN Epitaxial Silicon Darlington Transistor Features Monolithic Construction with Built-in Base-Emitter Shunt Resistors High DC Current Gain: h FE = 0 @ V CE = 4 V, I C = 3 A (Minimum) Collector-Emitter

More information

KSA1281 PNP Epitaxial Silicon Transistor

KSA1281 PNP Epitaxial Silicon Transistor KSA1281 PNP Epitaxial Silicon Transistor Features Audio Power Amplifier 3 W Output Application October 2014 1 TO-92L 1. Emitter 2. Collector 3. Base KSA1281 PNP Epitaxial Silicon Transistor Ordering Information

More information

BAT54SWT1G / BAT54CWT1G Schottky Diodes

BAT54SWT1G / BAT54CWT1G Schottky Diodes BAT54SWT1G / BAT54CWT1G Schottky Diodes SOT-2 1 2 MARKING BAT54SWT1G = YB BAT54CWT1G = YC November 2015 Connection Diagram BAT54SWT1G BAT54CWT1G 1 2 1 2 Ordering Information Part Number Top Mark Package

More information

BAV ma 70 V High Conductance Ultra-Fast Switching Diode

BAV ma 70 V High Conductance Ultra-Fast Switching Diode April 2014 BAV99 200 ma 70 V High Conductance Ultra-Fast Switching Diode Features High Conductance: I F = 200 ma Fast Switching Speed: t rr < 6 ns Maximum Small Plastic SOT-2 Package Series-Pair Configuration

More information

QEC112, QEC113 Plastic Infrared Light Emitting Diode

QEC112, QEC113 Plastic Infrared Light Emitting Diode QEC112, QEC113 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS λ = 940nm Chip material = GaAs Package type: T-1 (3 mm) Can be used with QSCXXX Photosensor Narrow Emission Angle, 8 at 80%

More information

KSC1815 NPN Epitaxial Silicon Transistor

KSC1815 NPN Epitaxial Silicon Transistor KSC85 NPN Epitaxial Silicon Transistor Features Audio Frequency Amplifier and High-Frequency OSC Complement to KSA5 Collector-Base Voltage: V CBO = 50 V TO-92. Emitter 2. Collector 3. Base May 204 Ordering

More information

FGH75N60UF 600 V, 75 A Field Stop IGBT

FGH75N60UF 600 V, 75 A Field Stop IGBT FGH75N6UF 6 V, 75 A Field Stop IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) =.9 V @ I C = 75 A High Input Impedance Fast Switching RoHS Compliant Applications Solar Inverter,

More information

KSC2383 NPN Epitaxial Silicon Transistor

KSC2383 NPN Epitaxial Silicon Transistor KSC2383 NPN Epitaxial Silicon Transistor October 204 TO-92L. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method KSC2383OTA C2383 O- TO-92 3L Ammo KSC2383YTA C2383

More information

2N5550 NPN Epitaxial Silicon Transistor

2N5550 NPN Epitaxial Silicon Transistor 2N5550 NPN Epitaxial Silicon Transistor Features Amplifier Transistor Collector-Emitter Voltage: V CEO = 40 V February 205 TO-92. Emitter 2. Base 3. Collector Ordering Information Part Number Top Mark

More information

4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers

4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers 4N38M, HDM, HD2M, HD3M, MOC8204M High Voltage Phototransistor Optocouplers Features High voltage: MOC8204M, BV CER = 400V HDM, HD2M, BV CER = 300V HD3M, BV CER = 200V High isolation voltage: 7500 V AC

More information

QEE113 Plastic Infrared Light Emitting Diode

QEE113 Plastic Infrared Light Emitting Diode QEE113 Plastic Infrared Light Emitting Diode Features λ = 940 nm Package Type = Sidelooker Chip Material = GaAs Matched Photosensor: QSE113 Medium Wide Emission Angle, 50 Package Material: Clear Epoxy

More information

BAT54 / BAT54A / BAT54C / BAT54S Schottky Diodes

BAT54 / BAT54A / BAT54C / BAT54S Schottky Diodes BAT54 / BAT54A / BAT54C / BAT54S Schottky Diodes 1 SOT-2 Ordering Information 2 L4P 1 2 MARKING BAT54 = L4P BAT54A = L42 BAT54C = L4 BAT54S = L44 November 2014 Connection Diagram BAT54 BAT54A 1 2NC 1 2

More information

MOC8111M, MOC8112M, MOC8113M 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection)

MOC8111M, MOC8112M, MOC8113M 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection) MOC8M, MOC82M, MOC83M 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection) Features High isolation voltage 7500 VAC Peak second High BV CEO minimum 70 Volts Current transfer ratio in

More information

FJN3314R NPN Epitaxial Silicon Transistor with Bias Resistor

FJN3314R NPN Epitaxial Silicon Transistor with Bias Resistor FJN3314R NPN Epitaxial Silicon Transistor with Bias Resistor Features ma Output Current Capability Built-in Bias Resistor ( = 4.7 kω, = 47 kω) Applications Switching, Interface, and Driver Circuits Inverters

More information

KA431 / KA431A / KA431L Programmable Shunt Regulator

KA431 / KA431A / KA431L Programmable Shunt Regulator KA431 / KA431A / KA431L Programmable Shunt Regulator Features Programmable Output Voltage to 36 V Low Dynamic Output Impedance: 0.2 Ω (Typical) Sink Current Capability: 1.0 to 100 ma Equivalent Full-Range

More information

FGPF V PDP Trench IGBT

FGPF V PDP Trench IGBT FGPF4536 36 V PDP Trench IGBT Features High Current Capability Low Saturation Voltage: V CE (sat) =.59 V @ I C = 5 A High Input Impedance Fast Switching RoHS Compliant Applications PDP TV, Consumer appliances,

More information

BD136 / BD138 / BD140 PNP Epitaxial Silicon Transistor

BD136 / BD138 / BD140 PNP Epitaxial Silicon Transistor BD136 / BD138 / BD140 PNP Epitaxial Silicon Transistor Features Complement to BD135, BD137 and BD139 respectively Applications Medium Power Linear and Switching Ordering Information 1 TO-126 1. Emitter

More information

FQD7N30 N-Channel QFET MOSFET

FQD7N30 N-Channel QFET MOSFET FQD7N30 N-Channel QFET MOSFET 300 V, 5.5 A, 700 mω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This

More information

FGPF70N33BT 330V, 70A PDP IGBT

FGPF70N33BT 330V, 70A PDP IGBT FGPF7N33BT 33V, 7A PDP IGBT Features High current capability Low saturation voltage: V CE(sat) =.7V @ I C = 7A High input impedance Fast switching RoHS Compliant Applications PDP System General Description

More information

FJV42 NPN High-Voltage Transistor

FJV42 NPN High-Voltage Transistor FJV42 NPN High-Voltage Transistor 3 2 October 2014 FJV42 NPN High-Voltage Transistor 1 SOT-23 Marking: 1DF 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method

More information

2N7000BU / 2N7000TA Advanced Small-Signal MOSFET

2N7000BU / 2N7000TA Advanced Small-Signal MOSFET 2N7000BU / 2N7000TA Advanced Small-Signal MOSFET Features Fast Switching Times Improved Inductive Ruggedness Lower Input Capacitance Extended Safe Operating Area Improved High-Temperature Reliability 1

More information

KSP44/45 NPN Epitaxial Silicon Transistor

KSP44/45 NPN Epitaxial Silicon Transistor KSP44/45 NPN Epitaxial Silicon Transistor Features High-oltage Transistor Collector-Emitter oltage: CEO = KSP44: KSP45: 350 Collector Power Dissipation: P C (max) = 625mW Ordering Information October 202

More information

BAS16 Small Signal Diode

BAS16 Small Signal Diode BAS6 Small Signal Diode February 205 2 A6 2 Connection Diagram 2NC SOT-2 Ordering Information Part Number Top Mark Package Packing Method BAS6 A6 SOT-2 L Tape and Reel, 7 inch Reel, 000 pcs BAS6_D87Z A6

More information

RURG3020CC. 30 A, 200 V, Ultrafast Dual Diode. Features. Description. Applications. Packaging. Ordering Information. Symbol. Data Sheet November 2013

RURG3020CC. 30 A, 200 V, Ultrafast Dual Diode. Features. Description. Applications. Packaging. Ordering Information. Symbol. Data Sheet November 2013 RURG32CC Data Sheet November 23 3 A, 2 V, Ultrafast Dual Diode Description The RURG32CC is an ultrafast dual diode with low forward voltage drop. This device is intended for use as freewheeling and clamping

More information

PN2907 / MMBT2907 PNP General-Purpose Transistor

PN2907 / MMBT2907 PNP General-Purpose Transistor PN2907 / MMBT2907 PNP General-Purpose Transistor Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 ma. Sourced from process 63.

More information

FGH60N60SFD 600V, 60A Field Stop IGBT

FGH60N60SFD 600V, 60A Field Stop IGBT FGH6N6SFD 6V, 6A Field Stop IGBT Features High current capability Low saturation voltage: V CE(sat) =2.3V @ I C = 6A High input impedance Fast switching RoHS compliant Applications Induction Heating, UPS,

More information

KSH122 / KSH122I NPN Silicon Darlington Transistor

KSH122 / KSH122I NPN Silicon Darlington Transistor KSH22 / KSH22I NPN Silicon Darlington Transistor Features D-PAK for Surface Mount Applications High DC Current Gain Built-in Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight

More information

KSC5502D/KSC5502DT. Symbol Characteristics Rating Unit R θjc Thermal Resistance Junction to Case 2.5 C/W R θja Junction to Ambient 62.

KSC5502D/KSC5502DT. Symbol Characteristics Rating Unit R θjc Thermal Resistance Junction to Case 2.5 C/W R θja Junction to Ambient 62. High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices : D-PAK

More information

QRE1113, QRE1113GR Miniature Reflective Object Sensor

QRE1113, QRE1113GR Miniature Reflective Object Sensor QRE1113, QRE1113GR Miniature Reflective Object Sensor Features Phototransistor Output No Contact Surface Sensing Miniature Package Lead Form Style: Gull Wing (1, 2) QRE1113GR Package Dimensions 1.80 2.90

More information

J174 / J175 / J176 / J177 MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch

J174 / J175 / J176 / J177 MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch J174 / J175 / J176 / J177 MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch J174 / 175 / 176 / 177 (1) MMBFJ175 / 176 / 177 S G D Ordering Information TO-92 Description June 2013 This device is designed

More information

TIP110 / TIP111 / TIP112 NPN Epitaxial Silicon Darlington Transistor

TIP110 / TIP111 / TIP112 NPN Epitaxial Silicon Darlington Transistor TIP / TIP / TIP2 NPN Epitaxial Silicon Darlington Transistor Features Monolithic Construction with Built-in Base-Emitter Shunt Resistors Complementary to TIP5 / TIP6 / TIP7 High DC Current Gain: h FE =

More information

KSD1616A NPN Epitaxial Silicon Transistor

KSD1616A NPN Epitaxial Silicon Transistor KSD66A NPN Epitaxial Silicon Transistor Features Audio Frequency Power Amplifier and Medium Speed Switching Complement to KSB6 / KSB6A February 205 TO-92. Emitter 2. Collector 3. Base KSD66A NPN Epitaxial

More information

FQD5N15 N-Channel QFET MOSFET

FQD5N15 N-Channel QFET MOSFET FQD5N15 N-Channel QFET MOSFET 150 V, 4.3 A, 800 mω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This

More information

FGA20N120FTD 1200 V, 20 A Field Stop Trench IGBT

FGA20N120FTD 1200 V, 20 A Field Stop Trench IGBT FGA2N2FTD 2 V, 2 A Field Stop Trench IGBT Features Field Stop Trench Technology High Speed Switching Low Saturation Voltage: V CE(sat) =.6 V @ I C = 2 A High Input Impedance RoHS Compliant Applications

More information

FFA60UA60DN UItrafast Rectifier

FFA60UA60DN UItrafast Rectifier FFA6UA6DN UItrafast Rectifier Features Ultrafast switching, Trr < 9ns High Reverse Voltage and High Reliability Avalanche Energy Rated Max Forward Voltage, V F < 2.2V RoHS Compliant Applications Boost

More information

FGH40N60UFD 600V, 40A Field Stop IGBT

FGH40N60UFD 600V, 40A Field Stop IGBT FGH4N6UFD 6V, 4A Field Stop IGBT Features High current capability Low saturation voltage: V CE(sat) =.8V @ I C = 4A High input impedance Fast switching RoHS compliant Applications Induction Heating, UPS,

More information

FGP5N60UFD 600V, 5A Field Stop IGBT

FGP5N60UFD 600V, 5A Field Stop IGBT FGP5N6UFD 6V, 5A Field Stop IGBT Features High current capability Low saturation voltage: V CE(sat) =.9V @ I C = 5A High input impedance Fast switching RoHS compliant Applications Induction Heating, UPS,

More information

FFH60UP60S, FFH60UP60S3

FFH60UP60S, FFH60UP60S3 Features High Speed Switching, t rr < 8ns High Reverse Voltage and High Reliability Avalanche Energy Rated Low Forward Voltage, V F

More information

LM431A / LM431B / LM431C Programmable Shunt Regulator

LM431A / LM431B / LM431C Programmable Shunt Regulator A / B / C Programmable Shunt Regulator Features Programmable Output Voltage to 36 V Low Dynamic Output Impedance: 0.2 Ω (Typical) Sink Current Capability: 1.0 to 100 ma Equivalent Full-Range Temperature

More information

KSC1845 NPN Epitaxial Silicon Transistor

KSC1845 NPN Epitaxial Silicon Transistor KSC845 NPN Epitaxial Silicon Transistor Features Audio Frequency Low-Noise Amplifier Complement to KSA992 February 205 TO-92. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package

More information

QED223 Plastic Infrared Light Emitting Diode

QED223 Plastic Infrared Light Emitting Diode QED223 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS λ = 880nm Chip material = AlGaAs Package type: T-1 3/4 (5mm lens diameter) Matched photosensor: QSD123/QSD124 Medium wide emission

More information

FGH30S130P 1300 V, 30 A Shorted-anode IGBT

FGH30S130P 1300 V, 30 A Shorted-anode IGBT FGH3S3P 3 V, 3 A Shorted-anode IGBT Features High Speed Switching Low Saturation Voltage: V CE(sat) =.75 V @ I C = 3 A High Input Impedance RoHS Compliant Applications Induction Heating, Microwave Oven

More information

FFPF30UA60S UItrafast Rectifier

FFPF30UA60S UItrafast Rectifier FFPF3UA6S UItrafast Rectifier Features Ultrafast switching, Trr < 9ns High Reverse Voltage and High Reliability Avalanche Energy Rated Max Forward Voltage, V F < 2.2V RoHS Compliant Applications Boost

More information

FFH60UP40S, FFH60UP40S3

FFH60UP40S, FFH60UP40S3 FFH60UP40S, FFH60UP40S3 Features High Speed Switching, t rr < 85ns @ I F = 60A High Reverse Voltage and High Reliability Avalanche Energy Rated Low Forward Voltage, V F

More information

LP2951 Adjustable Micro-Power Voltage Regulator

LP2951 Adjustable Micro-Power Voltage Regulator LP2951 Adjustable Micro-Power Voltage Regulator Features Adjustable or Fixed 5 V Output Voltage Low Quiescent Current Low Dropout Voltage Low Temperature Coefficient Tight Line and Load Regulation Guaranteed

More information

FFH60UP60S, FFH60UP60S3

FFH60UP60S, FFH60UP60S3 Features High Speed Switching, t rr < 8ns High Reverse Voltage and High Reliability Avalanche Energy Rated Low Forward Voltage, V F

More information

BAS16HT1G Small Signal Diode

BAS16HT1G Small Signal Diode BAS6HTG Small Signal Diode SOD-33 A March Connection Diagram BAS6HTG Small Signal Diode Absolute Maximum Ratings * T A = 5 C unless otherwise noted Symbol Parameter Value Units V RRM Maximum Repetitive

More information

MOCD223-M Dual Channel Phototransistor Small Outline Surface Mount Optocouplers

MOCD223-M Dual Channel Phototransistor Small Outline Surface Mount Optocouplers MOCD223-M Dual Channel Phototransistor Small Outline Surface Mount Optocouplers Features U.L. Recognized (File #E90700, Volume 2) VDE Recognized (File #13616) (add option V for VDE approval, i.e, MOCD223V-M)

More information

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler 4N29M, 4N30M, 4N32M, 4N33M, HBM, TIL3M General Purpose 6-Pin Photodarlington Optocoupler Features High sensitivity to low input drive current Meets or exceeds all JEDEC Registered Specifications UL, C-UL

More information

FQD7P20 P-Channel QFET MOSFET

FQD7P20 P-Channel QFET MOSFET FQD7P20 P-Channel QFET MOSFET -200 V, -5.7 A, 690 mω Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology.

More information

FDD86252 N-Channel PowerTrench MOSFET 150 V, 27 A, 52 m Features

FDD86252 N-Channel PowerTrench MOSFET 150 V, 27 A, 52 m Features FDD86 N-Channel PowerTrench MOSFET V, 7 A, m Features Max r DS(on) = m at V GS = V, I D = A Max r DS(on) = 7 m at V GS = 6 V, I D = 4 A % UIL tested RoHS Compliant General Description September This N-Channel

More information

FGA180N33ATD 330 V PDP Trench IGBT

FGA180N33ATD 330 V PDP Trench IGBT FGA8N33ATD 33 V PDP Trench IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) =.68 V @ I C = 8 A High Input Impedance RoHS Complaint Applications PDP TV General Description October

More information

FDB8860 N-Channel Logic Level PowerTrench MOSFET. 30V, 80A, 2.6mΩ. Features. Applications. December R DS(ON) = 1.9mΩ (Typ), V GS = 5V, I D = 80A

FDB8860 N-Channel Logic Level PowerTrench MOSFET. 30V, 80A, 2.6mΩ. Features. Applications. December R DS(ON) = 1.9mΩ (Typ), V GS = 5V, I D = 80A FDB886 N-Channel Logic Level PowerTrench MOSFET 3V, 8A, 2.6mΩ Features R DS(ON) =.9mΩ (Typ), V GS = 5V, I D = 8A Q g(5) = 89nC (Typ), V GS = 5V Low Miller Charge Low Q RR Body Diode UIS Capability (Single

More information

Symbol Parameter Ratings Units V DS Drain to Source Voltage 20 V V GS Gate to Source Voltage ±8 V -Continuous T

Symbol Parameter Ratings Units V DS Drain to Source Voltage 20 V V GS Gate to Source Voltage ±8 V -Continuous T FDGNZ Dual N-Channel PowerTrench MOSFET V,. A, 7 mω Features Max r DS(on) = 7 mω at V GS =. V, I D =. A Max r DS(on) = mω at V GS =. V, I D =. A Max r DS(on) = 7 mω at V GS =.8 V, I D =.9 A Max r DS(on)

More information