HV-MAPS. Dirk Wiedner Physikalisches Institut der Universität Heidelberg on behalf of the Mu3e silicon detector collaboration
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1 HV-MAPS Dirk Wiedner Physikalisches Institut der Universität Heidelberg on behalf of the Mu3e silicon detector collaboration 1
2 From Tracking to Pixel Sensors 2
3 Decay point o Primary vertex: o Tracks of decay products point to primary vertex Momentum o Charged particles are bend in magnetic fields o Curvature momentum Particle identification o Match information of sub-detectors Tracking e + B 3
4 Decay point o Primary vertex: o Tracks of decay products point to primary vertex Momentum o Charged particles are bend in magnetic fields o Curvature momentum Particle identification o Match information of sub-detectors o Secondary vertex Tracking e + B 4
5 Tracking Decay point o Primary vertex: o Tracks of decay products point to primary vertex Momentum o Charged particles are bend in magnetic fields o Curvature momentum Particle identification o Match information of sub-detectors o Secondary vertex e + 5
6 Tracking resolution Cell size dominated Scattering dominated 6
7 Tracking Detectors Gas detectors o Wire chamber o Straw tubes o Time Projection Chamber o Silicon detectors o Silicon strip o Silicon pixel o Scintillating fiber trackers LHCb outer tracker straw tubes CDF central wire chamber ALICE TPC 7
8 Tracking Detectors Gas detectors o Wire chamber o Straw tubes o Time Projection Chamber o Silicon detectors o Silicon strip o Silicon pixel o Scintillating fiber trackers Silicon strip prototype (NRL) SciFi (RWTH) Pixel chip (Berkley) 8
9 Which type of detector is best? Gas detectors Cheap Large surface possible Light weight Low multiple scattering Well known technology Production at institute Low power Amplifiers outside active volume Ageing Gas contents react chemically Little granularity Spatial resolution limited Some types are slow Silicon detectors 9
10 Which type of detector is best? Gas detectors Cheap Large surface possible Light weight Low multiple scattering Well known technology Production at institute Low power Amplifiers outside active volume Ageing Gas contents react chemically Little granularity Spatial resolution limited Some types are slow Silicon detectors 10
11 Which type of detector is best? Gas detectors Cheap Large surface possible Light weight Low multiple scattering Well known technology Production at institute Low power Amplifiers outside active volume Ageing Gas contents react chemically Little granularity Spatial resolution limited Some types are slow Silicon detectors Very good resolution Fine granularity Pixel: 15 x 15 μm 2 Radiation hard MeV neutron eq. /cm 2 Fast Drift Charge Collection High power Pre-amplifiers in active volume Expensive More material than gas chambers Multiple scattering Production by outside company 11
12 Which type of detector is best? Gas detectors Cheap Large surface possible Light weight Low multiple scattering Well known technology Production at institute Low power Amplifiers outside active volume Ageing Gas contents react chemically Little granularity Spatial resolution limited Some types are slow Silicon detectors Very good resolution Fine granularity Pixel: 15 x 15 μm 2 Radiation hard MeV neutron eq. /cm 2 Fast Drift Charge Collection High power Pre-amplifiers in active volume Expensive More material than gas chambers Multiple scattering Production by outside company 12
13 Silicon detectors PN-Diode o Fully depleted o V Silicon Strip o O(10) cm long o O(50) μm wide o Extra readout chip Silicon Pixel o Ca. 50 x 50 μm 2 o Hybrid extra readout o Monolithic integrated readout GAP P N
14 Working Principle of Silicon Detectors 14
15 PN-Junction PN-Diode P N
16 Depletion Zone PN-Diode Reverse voltage o Depletion zone GAP P N
17 PN-Diode Reverse voltage o Depletion zone Depletion Zone o Full depletion for high efficiency GAP P N
18 Charged Particle Track PN-Diode Reverse voltage o Depletion zone o Full depletion for high efficiency Charge particle tracks o electron hole pairs GAP P - + N
19 PN-Diode Reverse voltage o Depletion zone o Full depletion for high efficiency Charge particle tracks o electron hole pairs o Drift towards electrodes Diffusion much slower Charge Drift GAP P + - N
20 PN-Diode Charge Collection Reverse voltage o Depletion zone o Full depletion for high efficiency Charge particle tracks o electron hole pairs o Drift towards electrodes o Charge collection and pre-amplification GAP P N
21 Which type of detector is best? Gas detectors Cheap Light weight Well known technology Low power Ageing Little granularity Some types are slow Silicon detectors Very good resolution Fine granularity Radiation hard Fast High power Expensive More material than gas chambers Production by outside company 21
22 Hybrid Silicon Pixel Very good resolution Fine granularity Pixel: 55 x 55 μm 2 Radiation hard MeV neutron eq. /cm 2 Fast Drift Charge Collection + MediPix (Michal Platkevič Uni Prag) 22
23 Hybrid Silicon Pixel Very good resolution Fine granularity Pixel: 55 x 55 μm 2 Radiation hard MeV neutron eq. /cm 2 Fast Drift Charge Collection High power Pre-amplifiers in active volume Expensive More material than gas chambers Multiple scattering Production by outside company + MediPix (Michal Platkevič Uni Prag) 23
24 Which type of detector is best? Gas detectors Cheap Light weight Well known technology Low power Ageing Little granularity Some types are slow Silicon detectors Very good resolution Fine granularity Radiation hard Fast High power Expensive More material than gas chambers Production by outside company 24
25 HV-MAPS 25
26 HV-MAPS High Voltage Monolithic Active Pixel Sensors HV-CMOS technology Reversely biased by Ivan Peric I. Peric, A novel monolithic pixelated particle detector implemented in highvoltage CMOS technology Nucl.Instrum.Meth., 2007, A582,
27 HV-MAPS High Voltage Monolithic Active Pixel Sensors HV-CMOS technology Reversely biased ~60V o Charge collection via drift Fast O(10 ns) o Thinning to < 50 μm possible by Ivan Peric I. Peric, A novel monolithic pixelated particle detector implemented in highvoltage CMOS technology Nucl.Instrum.Meth., 2007, A582,
28 HV-MAPS High Voltage Monolithic Active Pixel Sensors HV-CMOS technology Reversely biased ~60V o Charge collection via drift Fast O(10 ns) o Thinning to < 50 μm possible Integrated readout electronics o Pre-amplifier o Digital readout Discriminator Time stamp and address Zero suppression by Ivan Peric I. Peric, A novel monolithic pixelated particle detector implemented in highvoltage CMOS technology Nucl.Instrum.Meth., 2007, A582,
29 HV CMOS detectors Monolithic active pixel sensor. Pixel electronics based on CMOS. Implemented in commercial technologies. PMOS and NMOS transistors are placed inside the shallow n- and p-wells. Pixel 1 Pixel 2 Pixel 3 PMOS NMOS Shallow n-well Shallow p-well RESMDD 2012, Firenze, Ivan Peric 29
30 HV CMOS detectors A deep n-well surrounds the electronics of every pixel. Pixel 1 Pixel 2 Pixel 3 PMOS NMOS deep n-well RESMDD 2012, Firenze, Ivan Peric 30
31 HV CMOS detectors The deep n-wells isolate the pixel electronics from the p-type substrate. Pixel 1 Pixel 2 Pixel 3 PMOS NMOS deep n-well p-substrate RESMDD 2012, Firenze, Ivan Peric 31
32 HV CMOS detectors The substrate can be biased low without damaging the transistors. In this way the depletion zones in the volume around the n-wells are formed. => Potential minima for electrons PMOS NMOS deep n-well Depletion zone Potential energy (e-) p-substrate RESMDD 2012, Firenze, Ivan Peric 32
33 HV CMOS detectors Charge collection occurs by drift o main part of the signal PMOS NMOS deep n-well Depletion zone Drift Potential energy (e-) p-substrate RESMDD 2012, Firenze, Ivan Peric 33
34 HV CMOS detectors Charge collection occurs by drift o main part of the signal Additional charge collection by diffusion. PMOS NMOS deep n-well Depletion zone Drift Potential energy (e-) p-substrate RESMDD 2012, Firenze, Ivan Peric Diffusion 34
35 HV CMOS detectors HVCMOS sensors can be implemented in any CMOS technology o that has a deep-n-well surrounding low voltage p-wells. o We have successfully used TSMC 65nm: 2.5 μm pixels. We expect the best results in high-voltage technologies: o These technologies have deeper n-wells and o the substrates of higher resistances than the LV CMOS. PMOS NMOS Smart diode deep n-well Depletion zone Potential energy (e-) p-substrate RESMDD 2012, Firenze, Ivan Peric 35
36 HV CMOS detectors Example AMS 350 nm HVCMOS: o Typical reverse bias voltage is V and o the depleted region depth ~15 μm. 20 cm substrate resistance -> acceptor density ~ cm -3. E-field: 100 V/15 μm or 67 kv/cm or 6.7 V/μm. PMOS NMOS deep n-well Depletion zone 100V ~15µm RESMDD 2012, Firenze, Ivan Peric 36
37 Chip Prototypes 37
38 Chip Prototypes 180 nm HV-CMOS Pixel matrix: o 42 x 36 pixels o 30 x 39 μm 2 each Ivan Peric ZITI o Analog part almost final o Digital part under development MuPix2 38
39 Chip Prototypes 180 nm HV-CMOS Pixel matrix: o 40 x 32 pixels o 92 x 80 μm 2 each Ivan Peric ZITI o Analog part almost final o Digital part under development MuPix3 39
40 Chip Prototypes 180 nm HV-CMOS Pixel matrix: o 40 x 32 pixels o 92 x 80 μm 2 each Ivan Peric ZITI o Analog part almost final o Digital part under development MuPix3 40
41 Sensor + Analog + Digital 41
42 Analog Electronics MuPix 42
43 Test Results Taken from: A.-K. Perrevoort, Characterization of High-Voltage Monolithic Active Pixel Sensors for the Mu3e Experiment, Master s thesis, University of Heidelberg,
44 Timing critical o 10 9 particles/s O(10 ns) resolution LED pulsed sensor Double pulse resolution Timing Tests A.-K. Perrevoort 44
45 Timing Tests LED pulsed sensor Double pulse resolution o Visible in oscilloscope A.-K. Perrevoort 45
46 Timing Tests LED pulsed sensor Double pulse resolution o Visible in oscilloscope o or time over threshold A.-K. Perrevoort 46
47 Double Pulse Resolution Ratio of o resolved to o unresolved double pulses 5.27 ± 0.01 μs A.-K. Perrevoort 47
48 Double Pulse Resolution Ratio of o resolved to o unresolved double pulses Default: 5.27 ± 0.01 μs Pixel bias current adjustment Optimized: 3.23 ± 0.01 μs Further reduction required A.-K. Perrevoort 48
49 Pulse Shape LED setup Test pulse latency + time over threshold A.-K. Perrevoort 49
50 Pulse Shape LED setup Test pulse latency + time over threshold A.-K. Perrevoort 50
51 Pulse Shape LED setup Test pulse latency + time over threshold for different thresholds A.-K. Perrevoort 51
52 Pulse Shape LED setup Test pulse latency + time over threshold for different thresholds faster shaping needed A.-K. Perrevoort 52
53 Timing: Latency jitter Precise timing important for: o High occupancy o Short readout frames Latency between o signal-pulse and o pixel response should be constant A.-K. Perrevoort 53
54 Timing: Latency jitter Latency between o test-pulse and pixel response Latency ± 1.63 ns Latency jitter 0.74 ± 0.18 ns Fast But: Pulse height dependency Measure Time over Threshold Pulse height Time correction Latency jitter distribution A.-K. Perrevoort 54
55 Pixel resolution MuPix2 prototype 170 GeV pion beam Used TimePix-telescope Pixel size: o 30 μm in x o 39 μm in y Resolution: o 11 μm in x o 15 μm in y Good resolution M.S.M. Kiehn 55
56 Signal to noise ratio Pre-amplifier at pixel o Low capacitance o Low noise Good signal to noise X-talk from digital readout possible o Digital part on fringe Radiation damage increases noise A.-K. Perrevoort 56
57 Proton irradiation KIT (Karlsruhe) n eq /cm 2 RESMDD 2012, Firenze, Ivan Peric 57
58 Irradiated device: CCPD2 Readout chip Digital part A A CAPPIX/CAPSENSE edgeless CCPD 50x50 µm pixel size Sensor RESMDD 2012, Firenze, Ivan Peric 58
59 Irradiation with protons at KIT n eq /cm 2 ~ number of signals Not irradiated Room temperature 1.0 RMS Noise 12 e 0.8 RMS Noise 0.5mv (12e) 55 Fe 70mV (1660e) Room temperature 55 Fe Base line noise (RMS) signal amplitude [V] RESMDD 2012, Firenze, Ivan Peric 59
60 Irradiation with protons at KIT n eq /cm 2 ~ number of signals ~number of signals Not irradiated Room temperature 1.0 RMS Noise 12 e 0.8 RMS Noise 0.5mv (12e) 55 Fe 70mV (1660e) Room temperature 55 Fe Irradiated 20 C 1.0 RMS Noise 270 e 0.8 RMS Noise, 13mv (270e) 55 Fe, 80mV (1660e) Temperature 20C Irradiated with protons to n eq 55 Fe peak Base line noise (RMS) Noise peak signal amplitude [V] Base line noise (RMS) signal amplitude [V] RESMDD 2012, Firenze, Ivan Peric 60
61 Irradiation with protons at KIT n eq /cm 2 ~ number of signals ~number of signals ~number of signals ~number of signals Not irradiated Room temperature 1.0 RMS Noise 12 e 0.8 RMS Noise 0.5mv (12e) 55 Fe 70mV (1660e) Room temperature 55 Fe Irradiated 20 C 1.0 RMS Noise 270 e 0.8 RMS Noise, 13mv (270e) 55 Fe, 80mV (1660e) Temperature 20C Irradiated with protons to n eq 55 Fe peak Base line noise (RMS) Noise peak Irradiated 10 C RMS Noise 77 e signal amplitude [V] RMS Noise, 2.8mv (77e) 55 Fe, 60mV (1660e) Temperature 10C Irradiated with protons to n eq 0.0 Base line noise (RMS) signal amplitude [V] RMS Noise, 2.4mv (40e) 55 Fe, 100mV (1660e) Temperature -10C Irradiated with protons to n eq Irradiated -10 C RMS Noise 40 e signal amplitude [V] RESMDD 2012, Firenze, Ivan Peric signal amplitude [V] 61
62 ~number of signals Irradiation with protons at KIT n eq /cm 2 55 Fe RMS Noise, 13mv (270e) 55 Fe, 80mV (1660e) Na, 200mV (4150e) Temperature 20C Irradiated with protons to n eq Na Temperature 20 C RMS Noise 270 e SNR = signal amplitude [V] 55 Fe and 22 Na spectrum, RMS noise RESMDD 2012, Firenze, Ivan Peric 62
63 ~number of signals ~number of signals ~number of signals Irradiation with protons at KIT n eq /cm Fe RMS Noise, 13mv (270e) 55 Fe, 80mV (1660e) 55 Na, 200mV (4150e) Temperature 20C Irradiated with protons to n eq RMS Noise, 2.8mv (77e) 55 Fe, 60mV (1660e) 55 Na, 180mV (4980e) Temperature 10C Irradiated with protons to n eq Na Temperature 20 C RMS Noise 270 e SNR = Temperature 10 C RMS Noise 77 e SNR = signal amplitude [V] signal amplitude [V] RMS Noise, 2.4mv (40e) 55 Fe, 100mV (1660e) Na, 220mV (3750e) Temperature -10C Irradiated with protons to n eq 55 Fe and 22 Na spectrum, RMS noise Temperature -10 C RMS Noise 40 e SNR = 93 RESMDD 2012, Firenze, Ivan Peric signal amplitude [V] 63
64 Irradiation with protons at KIT (10 15 n eq /cm 2 ) ~number of signals Na - 0V bias (0.075V or 1250e) 22 Na - 30V bias (0.18V or 3125e) 22 Na - 60V bias (0.22V or 3750e) 55 Fe - 60V bias (100mV or 1660e) RMS Noise (2.4mV or 40e) Temperature: - 10C Irradiated with protons to n eq V -30V -60V Na Fe signal amplitude [V] RESMDD 2012, Firenze, Ivan Peric 64
65 Radiation hardness Irradiation test of HVCMOS sensors with: o neutrons n eq at Munich, o protons n eq and 8 x n eq MRad at KIT and PS o x-rays 50MRad at KIT Two main effects are observed: o Reduction of the secondary signal part that is collected by diffusion o Increase of leakage current Good SNR can be achieved after irradiation o if the sensors are cooled to ~ 0 C Charge multiplication factor can further increase SNR Although we still do not understand all effects, the HVCMOS sensors seem to have a high radiation tolerance. RESMDD 2012, Firenze, Ivan Peric 65
66 HV MAPS Properties Good resolution Fine granularity Radiation hard Fast Cheap Similar radiation length as gas detectors Medium power Production by outside company 66
67 HV MAPS Properties Gas detectors Cheap Light weight Well known technology Low power Ageing Little granularity Some types are slow Silicon detectors Very good resolution Fine granularity Radiation hard Fast High power Expensive Production by outside company More material than gas detectors HV-MAPS Good resolution Fine granularity Radiation hard Fast Cheap Similar material as gas chambers Medium power Production by outside company 67
68 HV-MAPS Based Detector: Mu3e Tracker 68
69 Physics Motivation Lepton flavor violation? Standard model: No lepton flavor violation 69
70 Physics Motivation Lepton flavor violation: μ + e + e - e + Standard model: No lepton flavor violation, but: o Neutrino mixing o Branching ratio <10-50 unobservable 70
71 μ eee rare in SM Enhanced in: The Mu3e Signal o Super-symmetry o Grand unified models o Left-right symmetric models o Extended Higgs sector o Large extra dimensions 71
72 μ eee rare in SM Enhanced in: The Mu3e Signal o Super-symmetry o Grand unified models o Left-right symmetric models o Extended Higgs sector o Large extra dimensions Rare decay (BR<10-12, SINDRUM) For BR O(10-16 ) >10 16 muon decays High decay rates O(10 9 muon/s) 72
73 The Mu3e Background Combinatorial background o μ + e + νν & μ + e + νν & e + e - o many possible combinations Good time and Good vertex resolution required 73
74 The Mu3e Background μ + e + e - e + νν o Missing energy (ν) Good momentum resolution (R. M. Djilkibaev, R. V. Konoplich, Phys.Rev. D79 (2009) ) 74
75 Challenges High rates Good timing resolution Good vertex resolution Excellent momentum resolution Extremely low material budget 75
76 Challenges High rates: 10 9 μ/s Good timing resolution: 100 ps Good vertex resolution: ~100 μm Excellent momentum resolution: ~ 0.5 MeV/c 2 Extremely low material budget: 1x10-3 X 0 (Si-Tracker Layer) HV-MAPS spectrometer 50 μm thin sensors B ~1 T field + Timing detectors 76
77 The Mu3e Experiment Muon beam O(10 9 /s) Helium atmosphere 1 T B-field Target double hollow cone Silicon pixel tracker Scintillating fiber tracker Recurl station Tile hodoscope 77
78 The Mu3e Experiment Phase IA detector Muon beam O(10 9 /s) Helium atmosphere 1 T B-field Target double hollow cone Silicon pixel tracker Scintillating fiber tracker Recurl station Tile hodoscope 78
79 The Mu3e Experiment Muon beam O(10 9 /s) Helium atmosphere 1 T B-field Target double hollow cone Silicon pixel tracker Scintillating fiber tracker Recurl station Tile hodoscope 79
80 The Mu3e Experiment Muon beam O(10 9 /s) Helium atmosphere 1 T B-field Target double hollow cone Silicon pixel tracker Scintillating fiber tracker Recurl station Tile hodoscope 80
81 The Mu3e Experiment Phase IB detector Muon beam O(10 9 /s) Helium atmosphere 1 T B-field Target double hollow cone Silicon pixel tracker Scintillating fiber tracker Recurl station Tile hodoscope 81
82 The Mu3e Experiment Phase II detector Ca. 2 m total length Muon beam O(10 9 /s) Helium atmosphere 1 T B-field Target double hollow cone Silicon pixel tracker Scintillating fiber tracker Recurl station Tile hodoscope 82
83 The Mu3e Experiment Muon beam O(10 9 /s) Helium atmosphere 1 T B-field Target double hollow cone Silicon pixel tracker Scintillating fiber tracker Recurl station Tile hodoscope 83
84 Mu3e Silicon Detector Conical target Inner double layer o 12 and 18 sides of 1 x 12 cm Outer double layer o 24 and 28 sides of 2 x 36 cm Re-curl layers o 24 and 28 sides of 2x 72 cm o Both sides (x2) 180 inner sensors 4680 outer sensors pixel 84
85 Lightweight Detector 85
86 Material HV-MAPS Flex print Kapton Frame 86
87 Thinning 50 μm Si-wafers o Commercially available o HV-CMOS 75 μm (AMS) Single die thinning o For chip sensitivity studies o < 50 μm desirable o In house grinding? Local company 87
88 Flex Print Single Layer in active region Multilayer in cable end LVDS buffers at edge 88
89 Outer Double Layer Minimal material in sensitive region 89
90 Outer Doublet Design Modular design 90
91 Station Design 91
92 Inner Double Layer Very stable self supporting structure 92
93 Station Prototype 93
94 Mu3e 1Tbit/s Readout 94
95 Digital Logic Zero suppressed readout: Pixel logic: o Address generation o Time stamp o Column bus logic Column logic o Priority logic o using tri-state bus o Fifo buffer Chip wide logic o Data frame generation Serializer(s) o 800 Mbit/s LVDS Pixel address Pixel Logic Column Logic Frame logic Readout buffer Serializer Time stamp Coarse time 95
96 Digital Logic Zero suppressed readout: Pixel logic: o Address generation o Time stamp o Column bus logic Column logic o Priority logic o using tri-state bus o Fifo buffer Chip wide logic o Data frame generation Serializer(s) o 800 Mbit/s LVDS Pixel address Pixel Logic Column Logic Frame logic Readout buffer Serializer Time stamp Coarse time 96
97 Digital Logic Zero suppressed readout: Pixel logic: o Address generation o Time stamp o Column bus logic Column logic o Priority logic o using tri-state bus o Fifo buffer Chip wide logic o Data frame generation Serializer(s) o 800 Mbit/s LVDS Pixel address Pixel Logic Column Logic Frame logic Readout buffer Serializer Time stamp Coarse time 97
98 Data Acquisition 2.5 GHz muon decays 50 ns readout frames O(5000) pixel chips o 800 Mb/s readout links O(7500) scintillating fibers O(7000) timing tiles o DRS readout 3 layers switching FPGAs Optical data links Online filtering Pixel Sensor Silicon FPGAs Readout board PC 98
99 Event Filter Farm Trigger less readout GPU computers o PCIe FPGA/optical input o Tflop/s GPU 10x faster than CPU Requires custom code Makes farm affordable Optical mezzanine connectors GPU computer 99
100 Projected Sensitivity 100
101 Schedule 2012 Letter of intent to PSI, tracker prototype, technical design, research proposal 2013 Detector construction 2014 Installation and commissioning at PSI 2015 Data taking at up to a few 10 8 μ/s Construction of new beam-line at PSI Data taking at up to μ/s 101
102 Institutes Mu3e collaboration: o DPNC Geneva University o Paul Scherrer Institute o Particle Physics ETH Zürich o Physics Institute Zürich University o Physics Institute Heidelberg University o ZITI Mannheim o KIP Heidelberg 102
103 Summary High Voltage Monolithic Active Pixel Sensors combine good properties of o Gas detectors o Hybrid silicon detectors First prototypes look promising o Low noise o Fast o Radiation hard First HV-MAPS detector system for Mu3e experiment 103
104 Backup Slides 104
105 Si-Layer Rad Length Radiation length per layer o 2x 25 μm Kapton X 0 = 1.75e-4 o 15 μm thick aluminum traces (50% coverage) X 0 = 8.42e-5 o 50 μm Si MAPS X 0 = 5.34e-4 o 10 μm adhesive X 0 = 2.86e-5 Sum: 8.22e-4 (x4 layers) o For Θ min = 22.9 o X 0 = 21.1e-4 layer 3 layer 1 layer 2 Back Curl layers layer 4 105
106 Frame Support Beam pipe Spokes Support design light weight o Spokes combine all separate modules o Connected by metal beams o running in bushings 106
107 Cooling 2 m 2 silicon detector Up to 200mW/cm 2 4 kw cooling 60 ºC maximum Gaseous helium Laminar flow Tests: o Inductive heating o Aluminum foil 107
108 Tools Kapton-Frame tools: o Sensor on Flex print Gluing groove Vacuum lift o Tools are tested with 25 μm Kapton foil 50 μm glass 108
109 Momentum Resolution Multiple scattering only Current design: o 50 µm silicon o 50 µm Kapton o Helium gas cooling o 3 layer fiber tracker 109
110 Mu3e complementary to MEG 110
111 PSI μ-beam Paul Scherrer Institute Switzerland: 2.2 ma of 590 MeV/c protons Phase I: o Surface muons from target E o Up to a few 10 8 μ/s Phase II: o New beam line at the neutron source: HIMB project (2y application) o Several 10 9 μ/s possible >10 16 muon decays per year BR (90% CL) 111
112 Timing Detectors 112
113 Timing Detectors 113
114 Fiber hodoscope Timing Detectors o Before outer pixel layers o 250 μm scintillating fibers o SiPMs o 1 ns resolution Tile detector o After recurl pixel layers o 1x1 cm 2 scintillating tiles o SiPMs o 100 ps resolution 114
115 Fiber Hodoscope 250 μm scintillating fibers o Kuraray SCSF-81M o double cladding o 7500 in total Very high occupancies: o 24% in 50ns time frame Sampling readout o SiPM o DRS5 chip o From Stefan Ritt, PSI 115
116 Tile Detector 1x1 cm 2 scintillating tiles o O(7000) GosSip simulation o MPPC with 3600 pixels o 100 ps resolution (RMS) o 97% efficiency 116
117 Summary Mu3e searches for lepton flavor violation > μ-decays BR < (90% CL) Silicon tracker with ~275M pixel HV-MAPS 50 μm thin Two SiPM based timing systems Prototypes look encouraging 117
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