SiGe High-Linearity, 400MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch

Transcription

1 1-34; Rev ; 4/ EVALUATION KIT AVAILABLE General Description The high-linearity downconversion mixer provides.1db gain, +dbm IIP3, and.3db NF for MHz to MHz base-station receiver applications*. With an optimized MHz to MHz LO frequency range, this particular mixer is ideal for low-side LO injection receiver architectures in the cellular band. High-side LO injection is supported by the MAX, which is pin-for-pin and functionally compatible with the. In addition to offering excellent linearity and noise performance, the also yields a high level of component integration. This device includes a double-balanced passive mixer core, an IF amplifier, a dual-input LO selectable switch, and an LO buffer. On-chip baluns are also integrated to allow for single-ended RF and LO inputs. The requires a nominal LO drive of dbm, and supply current is guaranteed to be below ma. The /MAX are pin compatible with the MAX4/MAX 1MHz to 2MHz mixers, making this entire family of downconverters ideal for applications where a common PC board layout is used for both frequency bands. The is also functionally compatible with the MAX3. The is available in a compact, -pin, thin QFN package (mm x mm) with an exposed paddle. Electrical performance is guaranteed over the extended - C to + C temperature range. Applications MHz W-CDMA Base Stations GSM /GSM 2G and 2.G EDGE Base Stations cdmaone and cdma Base Stations iden Base Stations MHz to MHz OFDM/WiMAX CPE and Base-Station Equipment Predistortion Receivers Fixed Broadband Wireless Access Wireless Local Loop Private Mobile Radios Military Systems Microwave Links Digital and Spread-Spectrum Communication Systems cdma is a registered trademark of the Telecommunications Industry Association. cdmaone is a trademark of CDMA Development Group. iden is a registered trademark of Motorola, Inc. Features MHz to MHz RF Frequency Range* 3MHz to MHz LO Frequency Range* () MHz to MHz LO Frequency Range (MAX) MHz to MHz IF Frequency Range.1dB Conversion Gain +dbm Input IP3 +13dBm Input 1dB Compression Point.3dB Noise Figure 1dBc 2RF-2LO Spurious Rejection at PRF = -dbm Integrated LO Buffer Integrated RF and LO Baluns for Single-Ended Inputs Low -3dBm to +3dBm LO Drive Built-In SPDT LO Switch with 4dB LO1 to LO2 Isolation and ns Switching Time Pin Compatible with MAX4/MAX 1MHz to 2MHz Mixers Functionally Compatible with MAX3 External Current-Setting Resistors Provide Option for Operating Mixer in Reduced Power/Reduced Performance Mode Lead-Free Package Available Ordering Information PART TEMP RANGE PIN-PACKAGE ETP ETP-T ETP+D - C to + C - C to + C - C to + C E TP + TD - C to + C Thi n QFN - E P ** m m m m Thi n QFN - E P ** m m m m Thi n QFN - E P ** m m m m Thi n QFN - E P ** m m m m *For an RF frequency range below 1MHz (LO frequency below MHz), appropriate tuning is required. See Table 2 for details. **EP = Exposed paddle. + = Lead free. D = Dry pack. T = Tape-and-reel. Pin Configuration/Functional Diagram and Typical Application Circuit appear at end of data sheet. PKG CODE T- 3 T- 3 T- 3 T- 3 Maxim Integrated Products 1 For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at , or visit Maxim s website at

2 ABSOLUTE MAXIMUM RATINGS to...-.3v to +.V IF+, IF-, LOBIAS, LOSEL, IFBIAS to...-.3v to ( +.3V) TAP...-.3V to +1.4V LO1, LO2, LEXT to...-.3v to +.3V RF, LO1, LO2 Input Power...+12dBm RF (RF is DC shorted to through a balun)...ma Continuous Power Dissipation (T A = + C) -Pin Thin QFN-EP (derate 2.3mW/ C above + C)...2.1W Note A: T C is the temperature on the exposed paddle of the package. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS θ JA...+3 C/W θ JC C/W Operating Temperature Range (Note A)... to + C Junction Temperature...+1 C Storage Temperature Range...- C to +1 C Lead Temperature (soldering, s)...+ C ( Typical Application Circuit, using component values in Table 1, = +4.V to +.V, no RF signal applied, IF+ and IF- outputs pulled up to through inductive chokes, R 1 = 3Ω, R 2 = 1Ω, to + C, unless otherwise noted. Typical values are at = +V,, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Supply Voltage 4... V Supply Current I CC 222 ma LO_SEL Input-Logic Low V IL. V LO_SEL Input-Logic High V IH 2 V AC ELECTRICAL CHARACTERISTICS ( Typical Application Circuit, using component values in Table 1, = +4.V to +.V, RF and LO ports are driven from Ω sources, P LO = -3dBm to +3dBm, P RF = -dbm, f RF = 1MHz to MHz, f LO = MHz to MHz, f IF = 1MHz, f RF > f LO, to + C, unless otherwise noted. Typical values are at = +V, P RF = -dbm, P LO = dbm, f RF = MHz, f LO = MHz, f IF = 1MHz,, unless otherwise noted.) (Note 1) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS (Note 2) 1 RF Frequency Range f RF (Notes 2, 3) MHz (Note 2) LO Frequency Range f LO (Notes 2, 3) 3 MAX MHz IF Frequency Range f IF (Note 2) MHz Conversion Gain G C f RF = MHz, f LO = MHz, db Gain Variation Over Temperature to + C -. db/ C Conversion Gain Flatness Fl atness over any one of thr ee fr equency b and s: f RF = 24MHz to 4MHz f RF = MHz to 4MHz f RF = MHz to 1MHz ±. db Input Compression Point P 1dB (Note 4) 13 dbm f LO = MHz to MHz, f IF = 1MHz, P LO = dbm, (Note ) Input Third-Order Intercept Point IIP3 Two tones: f RF1 = MHz, f RF2 = MHz, P RF = -dbm/tone, f LO = MHz, P LO = dbm, 1 22 dbm 2

3 AC ELECTRICAL CHARACTERISTICS (continued) ( Typical Application Circuit, using component values in Table 1, = +4.V to +.V, RF and LO ports are driven from Ω sources, P LO = -3dBm to +3dBm, P RF = -dbm, f RF = 1MHz to MHz, f LO = MHz to MHz, f IF = 1MHz, f RF > f LO, to + C, unless otherwise noted. Typical values are at = +V, P RF = -dbm, P LO = dbm, f RF = MHz, f LO = MHz, f IF = 1MHz,, unless otherwise noted.) (Note 1) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Input IP3 Variation Over to - C -1. Temperature to + C +. Noise Figure NF Single sideband, f IF = 1MHz.3 db db Noise Figure Under-Blocking f R F = M H z ( no si g nal ) f L O = M H z f B LOC K E R = 1M H z f I F = 1M H z ( N ote ) P B LOC K E R = + d Bm P B LOC K E R = + d Bm 1 24 db Small-Signal Compression Under-Blocking Condition P FUNDAMENTAL = -dbm f F U N D A M E N TA L = M H z P B LOC K E R = + d Bm f B LOC K E R = M H z P B LOC K E R = + d Bm LO Drive dbm Spurious Response at IF LO1 to LO2 Isolation 2 x 2 2RF-2LO 3 x 3 3RF-3LO Note 1: All limits include external component losses. Output measurements taken at IF output of the Typical Application Circuit. Note 2: Operation outside this range is possible, but with degraded performance of some parameters. Note 3: See Table 2 for component list required for MHz to MHz operation. For operation from MHz to MHz, appropriate tuning is required; please contact the factory for support. Note 4: Compression point characterized. It is advisable not to operate continuously the mixer RF input above +12dBm. Note : Guaranteed by design and characterization. Note : Measured with external LO source noise filtered so the noise floor is -14dBm/Hz. This specification reflects the effects of all SNR degradations in the mixer, including the LO noise as defined in Maxim Application Note P RF = -dbm 1 P RF = -dbm P RF = -dbm P RF = -dbm 2 P LO = +3dBm LO2 selected 4 4 (Note ) LO1 selected 4 LO Leakage at RF Port P LO = +3dBm -32 dbm LO Leakage at IF Port P LO = +3dBm -23 dbm RF-to-IF Isolation P LO = +3dBm 4 db LO Switching Time % of LOSEL to IF settled to within 2 ns RF Port Return Loss 14 db LO Port Return Loss IF Port Return Loss LO1/2 port selected, LO2/1 and IF terminated LO1/2 port unselected, LO2/1 and IF terminated LO driven at dbm, RF terminated into Ω, differential Ω 23 db dbc db db 1 db 3

4 Typical Operating Characteristics ( Typical Application Circuit, using component values in Table 1, = +.V, P LO = dbm, P RF = -dbm, f RF > f LO, f IF = 1MHz, unless otherwise noted.) CONVERSION GAIN (db) CONVERSION GAIN vs. RF FREQUENCY T C = + C toc1 CONVERSION GAIN (db) CONVERSION GAIN vs. RF FREQUENCY toc2 CONVERSION GAIN (db) CONVERSION GAIN vs. RF FREQUENCY = 4.V,.V,.V toc3 2 2 INPUT IP3 vs. RF FREQUENCY T C = + C toc4 2 2 INPUT IP3 vs. RF FREQUENCY toc 2 INPUT IP3 vs. RF FREQUENCY = 4.V toc 24 =.V INPUT IP3 (dbm) INPUT IP3 (dbm) INPUT IP3 (dbm) =.V NOISE FIGURE vs. RF FREQUENCY T C = + C toc 12 NOISE FIGURE vs. RF FREQUENCY toc 12 NOISE FIGURE vs. RF FREQUENCY toc NOISE FIGURE (db) NOISE FIGURE (db) NOISE FIGURE (db) = 4.V,.V,.V 4

5 Typical Operating Characteristics (continued) ( Typical Application Circuit, using component values in Table 1, = +.V, P LO = dbm, P RF = -dbm, f RF > f LO, f IF = 1MHz, unless otherwise noted.) 2RF-2LO RESPONSE (dbc) 2RF-2LO RESPONSE vs. RF FREQUENCY P RF = -dbm T C = + C, - C toc 2RF-2LO RESPONSE (dbc) 2RF-2LO RESPONSE vs. RF FREQUENCY P RF = -dbm P LO = +3dBm P LO = -3dBm P LO = dbm toc 2RF-2LO RESPONSE (dbc) 2RF-2LO RESPONSE vs. RF FREQUENCY P RF = -dbm =.V =.V = 4.V toc RF-3LO RESPONSE (dbc) 3RF-3LO RESPONSE vs. RF FREQUENCY P RF = -dbm T C = + C toc13 3RF-3LO RESPONSE (dbc) 3RF-3LO RESPONSE vs. RF FREQUENCY P RF = -dbm toc14 3RF-3LO RESPONSE (dbc) 3RF-3LO RESPONSE vs. RF FREQUENCY P RF = -dbm =.V = 4.V =.V toc INPUT P 1dB vs. RF FREQUENCY T C = + C toc INPUT P 1dB vs. RF FREQUENCY toc INPUT P 1dB vs. RF FREQUENCY =.V toc1 INPUT P1dB (dbm) INPUT P1dB (dbm) INPUT P1dB (dbm) = 4.V =.V

6 Typical Operating Characteristics (continued) ( Typical Application Circuit, using component values in Table 1, = +.V, P LO = dbm, P RF = -dbm, f RF > f LO, f IF = 1MHz, unless otherwise noted.) LO SWITCH ISOLATION (db) 4 LO SWITCH ISOLATION T C = + C, - C toc1 LO SWITCH ISOLATION (db) 4 LO SWITCH ISOLATION toc LO SWITCH ISOLATION (db) 4 LO SWITCH ISOLATION = 4.V,.V,.V toc21 LO LEAKAGE (dbm) LO LEAKAGE AT IF PORT T C = + C, - C toc22 LO LEAKAGE (dbm) LO LEAKAGE AT IF PORT P LO = dbm, +3dBm P LO = -3dBm toc23 LO LEAKAGE (dbm) LO LEAKAGE AT IF PORT =.V = 4.V =.V toc LO LEAKAGE AT RF PORT (dbm) LO LEAKAGE AT RF PORT, - C T C = + C - toc LO LEAKAGE AT RF PORT (dbm) LO LEAKAGE AT RF PORT - toc2 LO LEAKAGE AT RF PORT (dbm) LO LEAKAGE AT RF PORT = 4.V,.V,.V - toc2

7 Typical Operating Characteristics (continued) ( Typical Application Circuit, using component values in Table 1, = +.V, P LO = dbm, P RF = -dbm, f RF > f LO, f IF = 1MHz, unless otherwise noted.) RF-TO-IF ISOLATION (db) 4 3 RF-TO-IF ISOLATION vs. RF FREQUENCY T C = + C toc2 RF-TO-IF ISOLATION (db) 4 3 RF-TO-IF ISOLATION vs. RF FREQUENCY toc2 RF-TO-IF ISOLATION (db) 4 3 RF-TO-IF ISOLATION vs. RF FREQUENCY = 4.V =.V =.V toc RF PORT RETURN LOSS (db) 1 RF PORT RETURN LOSS vs. RF FREQUENCY toc31 IF PORT RETURN LOSS (db) 1 IF PORT RETURN LOSS vs. IF FREQUENCY = 4.V,.V,.V toc32 LO SELECTED RETURN LOSS (db) LO SELECTED RETURN LOSS P LO = +3dBm P LO = -3dBm P LO = dbm toc33 1 IF FREQUENCY (MHz) LO UNSELECTED RETURN LOSS (db) 1 LO UNSELECTED RETURN LOSS toc34 SUPPLY CURRENT (ma) SUPPLY CURRENT vs. TEMPERATURE (T C ) =.V = 4.V =.V toc TEMPERATURE ( C)

8 Typical Operating Characteristics ( Typical Application Circuit, using component values in Table 2, = +.V, P LO = dbm, P RF = -dbm, f IF = MHz, unless otherwise noted.) CONVERSION GAIN (db) CONVERSION GAIN vs. RF FREQUENCY (TUNED FOR MHz TO MHz RF FREQUENCY) LOW-SIDE INJECTION, f RF > f LO T C = + C 4 4 toc3 INPUT IP3 (dbm) INPUT IP3 vs. RF FREQUENCY (TUNED FOR MHz TO MHz RF FREQUENCY) LOW-SIDE INJECTION, f RF > f LO T C = + C toc3 2RF-2LO RESPONSE (dbc) 2RF-2LO RESPONSE vs. RF FREQUENCY (TUNED FOR MHz TO MHz RF FREQUENCY) LOW-SIDE INJECTION, f RF > f LO P RF = -dbm T C = + C, - C toc3 3RF-3LO RESPONSE (dbc) 3RF-3LO RESPONSE vs. RF FREQUENCY (TUNED FOR MHz TO MHz RF FREQUENCY) 4 LOW-SIDE INJECTION, f RF > f LO P RF = -dbm T C = + C, - C toc3 RF PORT RETURN LOSS (db) RF PORT RETURN LOSS vs. RF FREQUENCY (TUNED FOR MHz TO MHz RF FREQUENCY) 1 =.V, P LO = dbm, LOW-SIDE INJECTION, f RF > f LO toc IF PORT RETURN LOSS (db) IF PORT RETURN LOSS vs. IF FREQUENCY (TUNED FOR MHz TO MHz RF FREQUENCY) =.V, P LO = dbm, LOW-SIDE INJECTION, f RF > f LO toc IF FREQUENCY (MHz) LO SELECTED RETURN LOSS (db) LO SELECTED RETURN LOSS (TUNED FOR MHz TO MHz RF FREQUENCY) 1 =.V, P LO = dbm, LOW-SIDE INJECTION, f RF > f LO toc42 LO UNSELECTED RETURN LOSS (db) LO UNSELECTED RETURN LOSS (TUNED FOR MHz TO MHz RF FREQUENCY) 1 =.V, P LO = dbm, LOW-SIDE INJECTION, f RF > f LO toc43 CONVERSION GAIN vs. RF FREQUENCY (TUNED FOR MHz TO MHz RF FREQUENCY) CONVERSION GAIN (db) HIGH-SIDE INJECTION, f LO > f RF T C = + C toc

9 Typical Operating Characteristics (continued) ( Typical Application Circuit, using component values in Table 2, = +.V, P LO = dbm, P RF = -dbm, f IF = MHz, unless otherwise noted.) INPUT IP3 vs. RF FREQUENCY (TUNED FOR MHz TO MHz RF FREQUENCY) HIGH-SIDE INJECTION, f LO > f RF 24 T C = + C 23 INPUT IP3 (dbm) toc4 2LO-2RF RESPONSE (dbc) 2LO-2RF RESPONSE vs. RF FREQUENCY (TUNED FOR MHz TO MHz RF FREQUENCY) HIGH-SIDE INJECTION, f LO > f RF P RF = -dbm, + C toc4 3LO-3RF RESPONSE (dbc) 3LO-3RF RESPONSE vs. RF FREQUENCY (TUNED FOR MHz TO MHz RF FREQUENCY) 4 HIGH-SIDE INJECTION, f LO > f RF P RF = -dbm T T C = + C C = + C toc RF PORT RETURN LOSS (db) RF PORT RETURN LOSS vs. RF FREQUENCY (TUNED FOR MHz TO MHz RF FREQUENCY) 1 =.V, P LO = dbm, HIGH-SIDE INJECTION, f RF > f LO toc4 IF PORT RETURN LOSS (db) IF PORT RETURN LOSS vs. IF FREQUENCY (TUNED FOR MHz TO MHz RF FREQUENCY) =.V, P LO = dbm, HIGH-SIDE INJECTION, f LO > f RF toc4 LO SELECTED RETURN LOSS (db) LO SELECTED RETURN LOSS (TUNED FOR MHz TO MHz RF FREQUENCY) 1 =.V, P LO = dbm, HIGH-SIDE INJECTION, f LO > f RF toc 4 4 LO UNSELECTED RETURN LOSS (db) 1 IF FREQUENCY (MHz) LO UNSELECTED RETURN LOSS (TUNED FOR MHz TO MHz RF FREQUENCY) 1 =.V, P LO = dbm, HIGH-SIDE INJECTION, f LO > f RF toc

10 PIN NAME FUNCTION Pin Description 1,,, 14 Power-Supply Connection. Bypass each pin to with capacitors as shown in the Typical Application Circuit. 2 RF 3 TAP Single-Ended Ω RF Input. This port is internally matched and DC shorted to through a balun. Requires an external DC-blocking capacitor. Center Tap of the Internal RF Balun. Bypass to with capacitors close to the IC, as shown in the Typical Application Circuit. 4,,, 12, 13, 1 Ground LOBIAS Bias Resistor for Internal LO Buffer. Connect a 1Ω ±1% resistor from LOBIAS to the power supply. LOSEL Local Oscillator Select. Logic control input for selecting LO1 or LO2. LO1 Local Oscillator Input 1. Drive LOSEL low to select LO1. 1 LO2 Local Oscillator Input 2. Drive LOSEL high to select LO2. 1 LEXT 1, 1 IF-, IF+ External Inductor Connection. Connect a low-esr, 4nH inductor from LEXT to. This inductor carries approximately 1mA DC current. Differential IF Outputs. Each output requires external bias to through an RF choke (see the Typical Application Circuit). IFBIAS IF Bias Resistor Connection for IF Amplifier. Connect a 3Ω ±1% resistor from IFBIAS to. EP Exposed Ground Paddle. Solder the exposed paddle to the ground plane using multiple vias. Detailed Description The high-linearity downconversion mixer provides.1db of conversion gain and +dbm of IIP3, with a typical.3db noise figure. The integrated baluns and matching circuitry allow for Ω singleended interfaces to the RF and the two LO ports. A single-pole, double-throw (SPDT) switch provides ns switching time between the two LO inputs with 4dB of LO-to-LO isolation. Furthermore, the integrated LO buffer provides a high drive level to the mixer core, reducing the LO drive required at the s inputs to a -3dBm to +3dBm range. The IF port incorporates a differential output, which is ideal for providing enhanced IIP2 performance. Specifications are guaranteed over broad frequency ranges to allow for use in cellular band GSM, cdma, iden, and W-CDMA 2G/2.G/3G base stations. The is optimized to operate over a 1MHz to MHz RF frequency range, a MHz to MHz LO frequency range, and a MHz to MHz IF frequency range. Operation beyond these ranges is possible; see the Typical Operating Characteristics for additional details. For operation at a MHz to MHz RF frequency range, see the Typical Operating Characteristics and Table 2 for details. RF Input and Balun The RF input is internally matched to Ω, requiring no external matching components. A DCblocking capacitor is required because the input is internally DC shorted to ground through the on-chip balun. LO Inputs, Buffer, and Balun The is ideally suited for low-side LO injection applications with an optimized MHz to MHz LO frequency range. Appropriate tuning allows for an LO frequency range below MHz (RF frequency below 1MHz). For a device with a MHz to MHz LO frequency range, refer to the MAX data sheet. As an added feature, the includes an internal LO SPDT switch that can be used for frequency-hopping applications. The switch selects one of the two singleended LO ports, allowing the external oscillator to settle on a particular frequency before it is switched in. LO switching time is typically less than ns, which is more than adequate for virtually all GSM applications. If frequency hopping is not employed, set the switch to either of the LO inputs. The switch is controlled by a digital input (LOSEL): logic-high selects LO2, logic-low selects LO1. To avoid damage to the part, voltage must be applied to VCC before digital logic is applied to LOSEL. LO1 and LO2 inputs are internally matched to Ω, requiring only a 2pF DC-blocking capacitor.

11 A two-stage internal LO buffer allows a wide input power range for the LO drive. All guaranteed specifications are for an LO signal power from -3dBm to +3dBm. The on-chip low-loss balun, along with an LO buffer, drives the double-balanced mixer. All interfacing and matching components from the LO inputs to the IF outputs are integrated on-chip. High-Linearity Mixer The core of the is a double-balanced, highperformance passive mixer. Exceptional linearity is provided by the large LO swing from the on-chip LO buffer. When combined with the integrated IF amplifiers, the cascaded IIP3, 2RF-2LO rejection, and NF performance is typically dbm, 1dBc, and.3db, respectively. Differential IF Output Amplifier The mixer has a MHz to MHz IF frequency range. The differential, open-collector IF output ports require external pullup inductors to. Note that these differential outputs are ideal for providing enhanced 2RF-2LO rejection performance. Singleended IF applications require a 4:1 balun to transform the Ω differential output impedance to a Ω singleended output. Applications Information Input and Output Matching The RF and LO inputs are internally matched to Ω. No matching components are required for an 1MHz to MHz RF frequency range. RF and LO inputs require only DC-blocking capacitors for interfacing. The IF output impedance is Ω (differential). For evaluation, an external low-loss 4:1 (impedance ratio) balun transforms this impedance down to a Ω singleended output (see the Typical Application Circuit). Capacitor C P is used at the RF input port to tune the mixer down to operate in the MHz to MHz RF frequency range (see Table 2). Operation between MHz to 1MHz would require a smaller capacitor C P. Contact the factory for details. Bias Resistors Bias currents for the LO buffer and the IF amplifier are optimized by fine tuning resistors R1 and R2. If reduced current is required at the expense of performance, contact the factory for details. If the ±1% bias resistor values are not readily available, substitute standard ±% values. LEXT Inductor LEXT serves to improve the LO-to-IF and RF-to-IF leakage. The inductance value can be adjusted by the user to optimize the performance for a particular frequency band. Since approximately 1mA flows through this inductor, it is important to use a low-dcr wire-wound coil. If the LO-to-IF and RF-to-IF leakage are not critical parameters, the inductor can be replaced by a short circuit to ground. Layout Considerations A properly designed PC board is an essential part of any RF/microwave circuit. Keep RF signal lines as short as possible to reduce losses, radiation, and inductance. For the best performance, route the ground pin traces directly to the exposed pad under the package. The PC board exposed pad MUST be connected to the ground plane of the PC board. It is suggested that multiple vias be used to connect this pad to the lower-level ground planes. This method provides a good RF/thermal conduction path for the device. Solder the exposed pad on the bottom of the device package to the PC board. The evaluation kit can be used as a reference for board layout. Gerber files are available upon request at Power-Supply Bypassing Proper voltage-supply bypassing is essential for highfrequency circuit stability. Bypass each pin and TAP with the capacitors shown in the Typical Application Circuit; see Table 1. Place the TAP bypass capacitor to ground within mils of the TAP pin. Exposed Pad RF/Thermal Considerations The exposed paddle (EP) of the s -pin thin QFN-EP package provides a low thermal-resistance path to the die. It is important that the PC board on which the is mounted be designed to conduct heat from the EP. In addition, provide the EP with a low-inductance path to electrical ground. The EP MUST be soldered to a ground plane on the PC board, either directly or through an array of plated via holes. Chip Information TRANSISTOR COUNT: 1 PROCESS: SiGe BiCMOS

12 Table 1. Component List Referring to the Typical Application Circuit for 1MHz to MHz RF Frequency Operation COMPONENT VALUE DESCRIPTION L1, L2 3nH Wire-wound high-q inductors () L3 4nH Wire-wound high-q inductor (3) C1 pf Microwave capacitor (3) C2, C4, C, C, C, C, C12 2pF Microwave capacitors (3) C3, C, C, C, C13, C14.1µF Microwave capacitors (3) C1 2pF Microwave capacitor (2) R1 3Ω ±1% resistor (3) R2 1Ω ±1% resistor (3) R3 3.Ω ±1% resistor (1) T1 4:1 balun IF balun (TC4-1W-A) U1 Maxim IC Table 2. Component List Referring to the Typical Application Circuit for MHz to MHz RF Frequency Operation COMPONENT VALUE DESCRIPTION L1, L2 nh Wire-wound high-q inductors () L3 4nH Wire-wound high-q inductor (3) C P pf Microwave capacitor (3) C1 pf Microwave capacitor (3) C2, C4, C, C, C, C, C12 2pF Microwave capacitors (3) C3, C, C, C, C13, C14 nf Microwave capacitors (3) C1 2pF Microwave capacitor (2) R1 3Ω ±1% resistor (3) R2 1Ω ±1% resistor (3) R3 3.Ω ±1% resistor (1) T1 4:1 balun IF balun (TC4-1W-A) U1 Maxim IC 12

13 1 Pin Configuration/Functional Diagram LO2 RF 2 14 TAP VCC LOBIAS VCC LOSEL IFBIAS IF+ IF- LEXT LO1 THIN QFN 13

14 C13 R3 C14 R1 L1 L2 C1 Typical Application Circuit T L3 4 IF OUTPUT RF INPUT C3 C2 C1 C RF TAP LO C12 C LO2 INPUT C LO1 C LO1 INPUT VCC LOBIAS VCC LOSEL IFBIAS IF+ IF- LEXT C P * R2 C C LOSEL INPUT C C *C P NEEDED FOR MHz TO MHz RF FREQUENCY OPERATION. SEE TABLE 2. 14

15 Package Information (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to MARKING D D/2 XXXXX E/2 k D2 C L D2/2 b L. M C A B E2/2 QFN THIN.EPS E (NE-1) X e LC E2 PIN # 1 I.D. DETAIL A e e/2 PIN # 1 I.D..3x4 (ND-1) X e DETAIL B e L1 L C L LC L L. C e e A. C C A1 A3 -DRAWING NOT TO SCALE- PACKAGE OUTLINE, 1,, 2, 32, L THIN QFN, xx.mm 21-1 H 1 2 COMMON DIMENSIONS PKG. 1L x L x 2L x 32L x L x SYMBOL MIN. NOM. MAX. MIN. NOM. MAX. MIN. NOM. MAX. MIN. NOM. MAX. MIN. NOM. MAX. A A A3. REF.. REF.. REF.. REF.. REF. b D E e. BSC.. BSC.. BSC.. BSC.. BSC. k L L N ND 4 NE 4 JEDEC WHHB WHHC WHHD-1 WHHD NOTES: 1. DIMENSIONING & TOLERANCING CONFORM TO ASME Y14.M ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. 3. N IS THE TOTAL NUMBER OF TERMINALS. 4. THE TERMINAL #1 IDENTIFIER AND TERMINAL NUMBERING CONVENTION SHALL CONFORM TO JESD -1 SPP-12. DETAILS OF TERMINAL #1 IDENTIFIER ARE OPTIONAL, BUT MUST BE LOCATED WITHIN THE ZONE INDICATED. THE TERMINAL #1 IDENTIFIER MAY BE EITHER A MOLD OR MARKED FEATURE.. DIMENSION b APPLIES TO METALLIZED TERMINAL AND IS MEASURED BETWEEN. mm AND. mm FROM TERMINAL TIP. EXPOSED PAD VARIATIONS PKG. D2 E2 L DOWN CODES BONDS MIN. NOM. MAX. MIN. NOM. MAX. ±.1 ALLOWED T ** NO T ** YES T1N ** NO T ** NO T ** YES T ** NO T YES T ** NO T ** NO T ** YES T ** YES T ** NO T ** NO T ** YES T YES TN ** NO T ** NO T ** YES T ** NO T3N ** NO T ** YES ** SEE COMMON DIMENSIONS TABLE. ND AND NE REFER TO THE NUMBER OF TERMINALS ON EACH D AND E SIDE RESPECTIVELY.. DEPOPULATION IS POSSIBLE IN A SYMMETRICAL FASHION.. COPLANARITY APPLIES TO THE EXPOSED HEAT SINK SLUG AS WELL AS THE TERMINALS.. DRAWING CONFORMS TO JEDEC MO2, EXCEPT EXPOSED PAD DIMENSION FOR T-1, T-3, AND T-.. WARPAGE SHALL NOT EXCEED. mm.. MARKING IS FOR PACKAGE ORIENTATION REFERENCE ONLY. 12. NUMBER OF LEADS SHOWN ARE FOR REFERENCE ONLY. 13. LEAD CENTERLINES TO BE AT TRUE POSITION AS DEFINED BY BASIC DIMENSION "e", ±.. -DRAWING NOT TO SCALE- PACKAGE OUTLINE, 1,, 2, 32, L THIN QFN, xx.mm 21-1 H 2 2 Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. Maxim Integrated Products, 1 San Gabriel Drive, Sunnyvale, CA -3-1 Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products, Inc.