Efficient Characterization and Testing of MRAM Devices. Parametric Testing for In-Line Monitoring
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1 Efficient Characterization and Testing of MRAM Devices Parametric Testing for In-Line Monitoring Siamak SALIMY, Gilles ZAHND, Nathalie LAMARD, Eric MONTREDON, Laurent LEBRUN, Jean-Pierre NOZIERES Antoine CHAVENT, Isabelle JOUMARD Santa Clara, CA 1
2 MRAM Control & Monitoring Flow - MTJ is integrated in standard CMOS BEOL masks - Manufacturing Process & Yield Optimization require Characterization & Testing under magnetic field Packaging Final Test FEOL Process Metal Dep. + Barrier Magnetic Tunnel Junction Formation Tunnel- Ox Magnetic Dep Blanket Test MTJ Etch Pad Magnetic Initialization Device Test WAT/PCM Parametric SoC Test WS/Binning Functional P-MOKE 3 levels of control under magnetic field for MRAM Santa Clara, CA 2
3 Test Equipment for Device Parametric Testing We developed a dedicated MTJ Electrical/Magnetic Parametric ATE Wafer Level testing under magnetic field Compatible with R&D and production requirements Santa Clara, CA 3
4 Pulse Amplitude (V) Pulse Amplitude (V) Ultra-Fast MRAM Parametric Test Program Proposed Efficient test Program at device level on MTJ test structures RH Loop Switching TMR Field Switching Probability Stability Factor, Anisotropic Field IV-Pulsed Sweep Test Current Switching Probability Breakdown Test MTJ Breakdown voltage Time(sec) Time(sec) Santa Clara, CA 4
5 Test setup for MTJ Device Parametric Test Setup The probing is done with RF Ground Signal Probe By 2 and 4 point probe measurements 3D Magnetic Generator AWG Magnet Field Control V/I LP Filter MTJ Source and Sense Control HP Filter Pulse/AWG Electrical Pulsing Control Santa Clara, CA 5
6 XYpole XYpole Test Protocols Magnetic Field Sweep 3D Magnetic Generator TM Area under test Perpendicular Configuration Z- pole Wafer under test Operates in 1D, 2D, 3D with each spatial axis controlled independently Magnetic field lines Santa Clara, CA 6
7 Test Protocols Magnetic Field Sweep Demonstration of performant field sweeping capability + Rmtj synchronized measurement at high field Chosen Point of Operation Measurement time Synchronized R mtj measurement at each field amplitude steps Field Excitation Trigger Signal Santa Clara, CA 7 Time
8 Test Protocols Magnetic Field Sweep Hysteresis test at sweep frequency of 10Hz / 10kSamples/sec 1 RH cycle sweep w/ 1,000 field steps in 100 milliseconds 10 RH Cycles w/ 1,000 field steps in 1 second Testing Time (sec) = (1/Sf) x Nbc Sf = Magnetic field sweep frequency Nbc = Number of magnetic sweep Cycles Santa Clara, CA 8
9 Test Protocols Electrical Pulsed Sweep - Current pulsing switching test with accurate resistance measurement - Rmtj measurements synchronized with pulse sweep steps Santa Clara, CA 9
10 Test Protocols Electrical Pulsed Sweep Testing Time (sec) = (Tin + Pw + Td) x Nbc Tin = Rmtj Integration Time Pw = Pulse Width Td = Delay between pulse and Rmtj measurement Nbc = Number of sweep cycles Leads to 300msec/cycle for +100sweep steps Pw = 10nsec Td = 1msec Tin = 0.5msec Santa Clara, CA 10
11 Summary Magnetic ATE for parametric testing of MRAM MTJ Fast magnetic sweeping capability synchronized with acquisition Competitive Testing Time ~1sec for magnetic sweep and current pulsing test Santa Clara, CA 11
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