State of the Art Room Temperature Scanning Hall Probe Microscopy using High Performance micro-hall Probes
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1 State of the Art Room Temperature Scanning Hall Probe Microscopy using High Performance micro-hall Probes A. Sandhu 1, 4, H. Masuda 2, A. Yamada 1, M. Konagai 3, A. Oral 5, S.J Bending 6 RCQEE, Tokyo Inst. of Tech. 1, Toei Kogyo Ltd 2, Tokyo Inst. of Tech. Grad. School 3 Tokai University 4, Bilkent University 5, University of Bath 6 A room temperature scanning Hall probe microscope system (RT-SHPM) was used for magnetic imaging of the surfaces of longitudinal magnetic recording media, low coercivity perpendicularly anisotropic iron garnet epitaxial layers, and demagnetized strontium ferrite permanent magnets placed in large external bias magnetic fields. An ultra-high sensitive sub-micron GaAs Hall probe with an active area of ~ 0.8x0.8 µm 2, room temperature Hall coefficient of 0.3Ω/G and field sensitivity of 0.04 G/ Hz was used as a Hall probe. Images obtained using a Bi micro-hall probe sensor are described. The development of high-density magnetic information storage media and permanent magnets requires a fundamental knowledge of the physical properties of magnetic domains [1-3]. A new versatile room temperature scanning Hall probe microscope system (RT-SHPM) was developed and used for the quantitative and non-invasive imaging of sub-micron magnetic domains in the presence of external magnetic fields [4-5]. The RT-SHPM was used for the magnetic imaging of commercially available written floppy disks, ZIP media, Bi-substituted iron garnet thin films and demagnetized strontium ferrite permanent magnets. The main components of the RT-SHPM are schematically shown in fig. 1. The system was specifically designed for use at room temperature with a maximum scanning range of 50x50 µm 2. A GaAs/AlGaAs heterostructure micro-hall probe sensor (HP) was mounted onto a piezoelectric scanning tube (PZT) at a tilt angle of 1.5o with respect to the sample. A scanning tunnelling microscope (STM) tip integrated adjacent to the HP was used for its precise vertical positioning. Magnetic imaging was carried out by first using a combination of high resolution stepper motors and the PZT to position the HP into close proximity to the sample surface until a tunnel current was detected at the STM tip. Next, the HP was scanned over the surface while simultaneously measuring changes in Hall voltage that are proportional to fluctuations of the perpendicular component of the magnetic field emanating from the surface. 1
2 The main features of the system include: (i) the tilt angle between the Hall probe and sample surface is precisely adjusted using an electronic angle sensor coupled to the PC control software; (ii) coarse sample approach is achieved by a high resolution motorized z-stage with a 25 mm range; (iii) the use of electrodes on the reverse-side of the Hall probe chip carrier for electrical connection of the Hall bar and STM tip to the control and biasing electronics; (v) data acquisition with a choice of 3 modes including the STM/SHPM mode where scanning is carried out while simultaneously monitoring STM tip tunnel current and the real time mode where a 128 x 128 pixel scan is possible in approximately 1 second; (vi) an electronic control system incorporating an ultra stable dc current source and low noise amplifier circuits. The HP, with an active area of active area of ~ 0.8 x 0.8 µm2, was fabricated by photolithography using a GaAs/AlGaAs heterostructure grown by MBE with a two dimensional electron gas density of 2 x cm 2 and mobility of 400,000 cm 2 /Vs, at 4.2K. The Hall probe was located 13 µm from the chip corner. The room temperature Hall coefficient of the HP was 0.3Ω/G and field sensitivity was 0.04 G/ Hz. The STM tip was not coupled to the Hall bar thus reducing noise during measurement. A Hall drive current of 3 ma was used for all the measurements. The raw two-dimensional gray-scale image data of RT-SHPM scans was stored as either a bit-map or ASCII format. In some cases, a three dimensional visualization of the SHPM image can be more informative for interpreting results. For such purposes, we developed unique program routines for the static and animated 3-D visualization of SHPM data using Interactive Data Language [6]. Fig.2 shows a typical 50µm x 50µm RT-SHPM image of a written 3.5-inch floppy disk clearly with written transitions adjacent to a gap between two tracks. The black and white regions represent magnetic regions with magnetizations into and out of the plane of the paper where the measured fields vary between 130 Gauss from black to white. Figs. 3(a-f) are representative 25 µm x 25 µm images taken in the real time SHPM mode, showing the coalescence of floppy disk transition regions under perpendicular fields upto 3460 Oe. Fig. 4 shows a 50µm x 50µm STM/SHPM mode image of a ZIP disk where the field variations along the line are shown in the graph. Fig.5 shows typical 25µm x 25µm SHPM images of a 5.5 µm thick bismuth substituted iron garnet thin film measured in the real time SHPM mode with the garnet placed in a varying external perpendicular field as indicated. A total of 25 images were taken at 25 Oe intervals. The images clearly show the initial hexagonal bubble lattice to expand and transform into a maze pattern. The measured field ranged between 59G. 2
3 These results show the configurational hysteresis of domain structures in low-coercivity films with strong perpendicular anisotropy [7]. Fig. 6 shows a 50mm x 50mm image of a 360µm thick Bi substituted iron garnet epilayer. The image resembles fujitsubo (barnacles) as observed in the gray scale image. The RT-SHPM image reveals a very complicated spatial magnetic field distribution that is not observed using conventional optical techniques often used for characterization of garnets. The graph shows the variation of the magnetic field along the line [A-B] across one of the fujitsubo-like domain structures. Figs. 7(a) and 7(b) show the RT-SHPM images of a demagnetized Sr ferrite magnet without and with (1760 Oe) an external perpendicular field, respectively. Domain structures are clearly imaged and are seen to increase in size on application of the external field. Figure 8 shows an RT-SHPM image obtained using a Bi-micro-Hall probe, of the changes in the stripe domain structure of a 5.5-µm thick bismuth substituted iron garnet thin film under a perpendicular external bias field of 1131 Oe [8]. Bismuth is a practical alternative to semiconductors for the fabrication of nanometer sized Hall probes. References 1. Magnetic Information Storage Technology S.X. Wang and A.M. Taratorin, (Academic Press, 1999) 2. H.R. Kirchmayr: J. Phys. D: Appl. Phys. 29, 2763, (1996) 3. Nature, 404, 918,(2000) 4. A. Sandhu et.al: 8th Asia-Pacific Physics Conference Academia Sinica, Taiwan, August 6-9, (2000). 5. A. Sandhu et.al: Proceedings of the 8th International Conference on Ferrites Kyoto, Sept , (2000). 6. Research Systems, Inc., Pearl East Circle, Boulder, USA. 7. K.L. Babcock et.al: Phys.A. 40, 2022, (1989). 8. A. Sandhu et.al: Jpn. J. App. Phys., 40, L524, (2001). 3
4 DESK TOP PERSONAL COMPUTER Z-AXIS SCANNING CONTROLLER HALL PROBE PZT SERVO-CONTROLLER FIELD DETECTION COIL SAMPLE X-Y COARSE ADJUSTMENT MECHANISM TUNNEL CURRENT DETECTION COARSE ADJUST CONTROLLER CURRENT AMPLIFIER Fig.1: Main components of the RT-SHPM Fig.2: 50 micron x 50 micron RT-SHPM image of a track on a 3.5 inch floppy disk. 4
5 (a) 592 (Oe) (b) 1519 (Oe) (c) 2050 (Oe) (d) 2480 (e) 2960 (Oe) (f) 3460 (Oe) Figs 3(a-f): Typical 25 micron x 25 micron images showing the coalescence of floppy disk transition regions under perpendicular fields up to 3460 Oe. 5
6 FIELD (G) POSITION (ì m Fig. 4: Magnetic images of a ZIP disk and graph showing the variation of magnetic field along the line shown. 6
7 290 Oe 850 Oe 933 Oe 1131 Oe 1027 Oe 933 Oe 747 Oe Fig. 5: 25 micron x 25 micron RT-SHPM images of a 5.5 µm thick single crystal bismuth substituted iron garnet thin film in a cyclic external magnetic field. 7
8 A B Magnetic Field (G) Position along line from A to B [m m) Fig. 6: 50 micron x 50 micron RT-SHPM fujitsubo-like image of a 360 micrometer thick garnet thin film and graph showing variation of field along the line shown. 8
9 (a) (b) Figs 7(a) and (b) showing magnetic fluctuations on the surfaces of demagnetized St ferrite permanent magnets, without (a) and with (b) and external applied field of 1760 Oe. 9
10 Magnetic Field (Gauss) Distance (m m) Fig 8: 25 micron x 25 micron RT-SHPM image of a 5.5- micrometer thick bismuth substituted iron garnet thin film under perpendicular external bias fields of 1131 Oe and graph showing the cross-section field variation along line indicated. 10
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