Diodes Incorporated. Discrete and Analog Semiconductors

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1 Diodes Incorporated for Discrete and Analog Semiconductors QPAK/PPAP 2130 Qualification Report Manufacturer No.: PCN-2130 Qualification of Alternative Copper Bond Wire, BOM Change, A/T Site and Die Shrink Revision 0 Date: February 12, 2014 Qualified By: Also Applicable To: Diodes Incorporated The part numbers listed in the associated PCN are Qualified by Similarity (QBS) to the devices included in this report. Please go to for current data sheets on the parts listed in this report. Prepared By: Diodes US Document Control Date February 12, 2014 Diodes US QRA Department Date February 12, 2014 "The information contained herein is DIODES INCORPORATED PROPRIETARY information. Reproduction of this document, disclosure of the information, and use for any purpose other than the conduct of business with Diodes Incorporated. is expressly prohibited" DIODES INCORPORATED 4949 Hedgcoxe Road, Suite # 200, Plano, TX USA

2 Quality and Reliability Data Notice Plastic encapsulated Diodes Incorporated semiconductor devices are not designed and are not warranted to be suitable for use in some military applications and/or military environments. Use of plastic encapsulated Diodes Incorporated semiconductor devices in military applications and/or military environments, in lieu of hermetically sealed ceramic devices, is understood to be fully at the risk of Buyer. Quality and reliability data provided by Diodes Incorporated is intended to be an estimate of product performance based upon history only. It does not imply that any performance levels reflected in such data can be met if the product is operated outside the conditions expressly stated in the latest published data sheet for a device. Existing industry standards for plastic encapsulated microcircuit qualification and reliability monitors are based upon historical data, experiments, and field experience with the use of these devices in commercial and industrial applications. The applicability of these standards in determining the suitability for use and safety performance in life support, military and aerospace applications has not been established. Due to the multiple variations in field operating conditions, a component manufacturer can only base estimates of product life on models and the results of package and die level qualification. The buyer s use of this data, and all consequences of such use, is solely the buyer s responsibility. Buyer assumes full responsibility to perform sufficient engineering and additional qualification testing in order to properly evaluate the buyer s application and determine whether a candidate device is suitable for use in that application. The information provided by Diodes Incorporated shall not be considered sufficient grounds on which to base any such determination. THIS INFORMATION IS PROVIDED "AS IS" WITHOUT ANY EXPRESS OR IMPLIED WARRANTY OF ANY KIND INCLUDING WARRANTIES OF MERCHANTABILITY, NONINFRINGEMENT OF INTELLECTUAL PROPERTY, OR FITNESS FOR ANY PARTICULAR PURPOSE. IN NO EVENT SHALL DIODES INCORPORATEDOR ITS SUPPLIERS BE LIABLE FOR ANY DAMAGES WHATSOEVER (INCLUDING, WITHOUT LIMITATION, DAMAGES FOR LOSS OF PROFITS, BUSINESS INTERRUPTION, LOSS OF INFORMATION) ARISING OUT OF THE USE OF OR INABILITY TO USE THE INFORMATION, EVEN IF DIODES INCORPORATED HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES. Diodes Incorporated may provide technical, applications or design advice, quality characterization, and reliability data or service providing these items shall not expand or otherwise affect Diodes Incorporated warranties as set forth in the Diodes Incorporated Standard Terms and Conditions of Sale for and no obligation or liability shall arise from Diodes Incorporated provision of such items. "The information contained herein is DIODES INCORPORATED PROPRIETARY information. Reproduction of this document, disclosure of the information, and use for any purpose other than the conduct of business with Diodes Incorporated is expressly prohibited". DIODES INCORPORATED 4949 Hedgcoxe Road, Suite # 200 Plano, TX USA (972)

3 DATE: 12 th February, 2014 PCN #: 2130 PCN Title: Qualification of Alternative Copper Bond Wire, BOM Change, A/T Site and Die Shrink Dear Customer: This is an announcement of change(s) to products that are currently being offered by Diodes Incorporated. We request that you acknowledge receipt of this notification within 30 days of the date of this PCN. If you require samples for evaluation purposes, please make a request within 30 days as well. Otherwise, samples may not be built prior to this change. Please refer to the implementation date of this change as it is stated in the attached PCN form. Please contact your local Diodes sales representative to acknowledge receipt of this PCN and for any sample requests. The changes announced in this PCN will not be implemented earlier than 90 days from the notification date stated in the attached PCN form. Previously agreed upon customer specific change process requirements or device specific requirements will be addressed separately. For questions or clarification regarding this PCN, please contact your local Diodes sales representative. Sincerely, Diodes Incorporated PCN Team DIC-034 R2 Page 1 of 3 Diodes Incorporated Rel Date: 5/29/2013

4 PRODUCT CHANGE NOTICE PCN-2130 REV 00 Notification Date: Implementation Date: Product Family: Change Type: PCN #: 12 th February, th May, 2014 Analog TITLE Cu Wire, A/T Site, Die Shrink and BOM Change 2130 Qualification of Alternative Copper Bond Wire, BOM Change, A/T Site and Die Shrink DESCRIPTION OF CHANGE In order to assure continuity of supply, this PCN is being issued to notify customers of a qualified alternative copper bond wire, BOM change, A/T site and die shrink on devices listed below. Alternative A/T Site is Diodes SKE/DSH (Shanghai Kaihong Electronic Co./Diodes Inc. Shanghai) Assembly & Test Sites. Full electrical characterization and high reliability testing has been completed on representative parts to ensure no change to device functionality or data sheet electrical specifications. There will be no change to the Form, Fit, or Function of affected products. IMPACT Continuity of Supply PRODUCTS AFFECTED Please refer to table below WEB LINKS Manufacturer s Notice: For More Information Contact: Data Sheet: DISCLAIMER Unless a Diodes Incorporated Sales representative is contacted in writing within 30 days of the posting of this notice, all changes described in this announcement are considered approved. DIC-034 R2 Page 2 of 3 Diodes Incorporated Rel Date: 5/29/2013

5 Qualification of Alternative Bond Wire, BOM Change, A/T Site and Die Shrink AH1751-RG-7-A APX809-23SRG-7 APX809-46SRG-7 APX810-44SRG-7 APX803-29SRG-7 AH1751-WG-7-A APX809-26SAG-7 APX810-23SAG-7 APX810-46SAG-7 APX803-31SRG-7 AH180-WG-7 APX809-26SRG-7 APX810-23SRG-7 APX810-46SRG-7 APX803-40SRG-7 AH180-WG-7-P APX809-29SAG-7 APX810-26SAG-7 APX803-23SAG-7 APX803-44SRG-7 AH1806-Z-7 APX809-29SRG-7 APX810-26SRG-7 APX803-26SAG-7 APX803-46SRG-7 AH1807-Z-7 APX809-31SAG-7 APX810-29SAG-7 APX803-29SAG-7 APX803D-29SAG-7 AH1808-Z-7 APX809-31SRG-7 APX810-29SRG-7 APX803-31SAG-7 APX803D-29SRG-7 AH1809-Z-7 APX809-40SAG-7 APX810-31SAG-7 APX803-40SAG-7 AP7176BSP-13 ** AH1806-W-7 APX809-40SRG-7 APX810-31SRG-7 APX803-44SAG-7 AP7176BMP-13 ** AH2984-PG-B * APX809-44SAG-7 APX810-40SAG-7 APX803-46SAG-7 AH1807-P-A AH2984-YG-13 * APX809-44SRG-7 APX810-40SRG-7 APX803-23SRG-7 AH1807-P-B APX809-23SAG-7 APX809-46SAG-7 APX810-44SAG-7 APX803-26SRG-7 AH1809-P-A AH1809-P-B * = Alternative A/T Site is Diodes SKE/DSH (Shanghai Kaihong Electronic Co./Diodes Inc. Shanghai) Assembly & Test Sites. ** = Die Shrink DIC-034 R2 Page 3 of 3 Diodes Incorporated Rel Date: 5/29/2013

6 Eval Device 1 QBS Device 1 Part Number AH2984-YG-13 AH2984-YG-13 Package SOT89-5L SOT89-5L Die Name(s) A0197C0 A0197C0 Wafer FAB LSC LSC Wafer Diameter 6" 6" Bond Type (at Die) Ball Ball Bond Type (at LF) Wedge Wedge No. of bond over active area 0 0 Glass Transistion Temp Lead Material Manufacture ND ND Header plating (Die Land Area) Ag Ag Max Junction Temp Front Metal Type Die passivation thickness range Al alloy Target (98.5% Al+1.0% Si+0.5%Cu) SiO2 (0.6±0.03um) SiN (0.6±0.03um) Al alloy Target (98.5% Al+1.0% Si+0.5%Cu) SiO2 (0.6±0.03um) SiN (0.6±0.03um) No of masks Steps Die Size (W/L/Thickness) 1690*1300* *1300* Die Process / Technology CMOS/1um/40V/15V/2P2M CMOS/1um/40V/15V/2P2M Die Quantity (eg. Die per package) 1 1 DB Epoxy/Solder Type WBC Epoxy Die Attach Material 8006NS 84-1LMISR4 Wire Bond Material (Au, Cu, Al) Cu Au Wire Diameter 0.8 mil 1.2 mil Front Metal Thickness 1.5±0.1um 1.5±0.1um Leadframe Type SOT89-5L SOT89-5L Leadframe Material EFTEC 45-1/2H KFC Molding Compound Type G700 G600FB Green Compound (Yes/No) Yes Yes Lead-Free (Yes/No) Yes Yes Assembly Site SAT GTBF Test Site SAT SAT DataSheet AH2984 AH2984 Test Test Conditions Duration / Limits Fail/SS QBS Test Completed MSL1 Precond Bake 125C 24 Hrs 0/154 X Pass X Pass Soak 85C, 85% RH 168Hrs 0/154 X Pass X Pass IR reflow 260C 3 cycles 0/154 X Pass X Pass HTOL Tj>125C, 100% Vcc 168 Hrs 0/77 X Pass TC -65C-150C 500 cycles 0/77 X Pass X Pass 1000 cycles 0/77 X (for reference) Pass X Pass HAST 130C, 85%RH 33.3 psia 80% Bias 96 Hrs 0/77 X Pass X Pass HTSL 150C 168 Hrs 0/77 X Pass X Pass X Pass X Pass Latch-up JESD78 100mA 0/6 X Pass ESD HBM (AEC-Q ) +-2KV 0/3 X Pass MM ( AEC-Q ) +-200V 0/3 X Pass WBP MIL-STD Cpk>1.66 0/30 X Pass WBS JESD22-B116B Cpk>1.66 0/30 X Pass Char -40C, 0C, 25C, 85C, 125C Operating Range 0/30 X Pass

7 Qual Device 1 Qual Device 2 Qual Device 3 Part Number APX809 XXSAG 7 APX809 XXSRG 7 APX810 XXSAG 7 APX810 XXSRG 7 (XX=23,26,29,31,40,44,46) APX809 26SAG 7 77 APX809 26SAG 7 82 APX809 29SAG 7 77 APX809 29SRG 7 69 APX809 29SRG 7 89 APX809 44SRG 7 89 APX810 29SAG 7 77 APX803 XXSAG 7 APX803 XXSRG 7 (XX=23,26,31,40,44,46) APX803D 29SAG APX803D 29SRG APX803D 29SAG 7 82 Test Package SSOT 23 SSOT 23 SSOT 23 Package Size 1.3*2.9*1mm 1.3*2.9*1mm 1.3*2.9*1mm Die Name(s) A0148O0 A0148M0 A0148N0 Wafer FAB NTC NTC NTC Wafer Diameter 150mm 150mm 150mm Bond Type (at Die) Ball Ball Ball Bond Type (at LF) Wedge Wedge Wedge No. of bond over active area Glass Transistion Temp 120 degree C 130 degree C 120 degree C Max Junction Temp 150 degree C 150 degree C 150 degree C Max Thermal resistance Junc (case) 56 degree C/W 56 degree C/W 56 degree C/W Max Thermal resistance Junc (amibent) 201 degree C/W 201 degree C/W 201 degree C/W Front Metal Type Al/Cu Al/Cu Al/Cu Die passivation thickness range SiO2 3KA +/ 0.3KA SiN 5KA +/ 0.5KA SiO2 3KA +/ 0.3KA SiN 5KA +/ 0.5KA SiO2 3KA +/ 0.3KA SiN 5KA +/ 0.5KA No of masks Steps Die Size (W/L/Thickness) (um) 1161*700*205um 1161*700*205um 1161*700*205um Die Process / Technology CMOS/0.5um/5V 2P2M CMOS/0.5um/5V 2P2M CMOS/0.5um/5V 2P2M Die Quantity (eg. Die per package) DB Epoxy/Solder Type WBC C+B WBC C+B WBC C+B Die Attach Material 8006NS 8006NS 8006NS Wire Bond Material (Au, Cu, Al) Cu Cu Cu Wire Diameter 0.8mil 0.8mil 0.8mil Front Metal Thickness 0.8um 0.8um 0.8um Leadframe Type SOT 23U(Ring plated) SOT 23U(Ring plated) SOT 23U(Ring plated) Leadframe Material SOT 23U(Ring plated) SOT 23U(Ring plated) SOT 23U(Ring plated) Molding Compound Type CEL 1700D3 CEL 1700D3 CEL 1700D3 Green Compound (Yes/No) Yes Yes Yes Lead Free (Yes/No) Yes Yes Yes Assembly Site SAT SAT SAT Test Site SAT SAT SAT DataSheet APX809/810 APX803/D APX803/D Test Conditions Duration / Limits Fail/SS MSL1 Precond Bake 125C 24 Hrs 0/154 X Pass X Pass X Pass Soak 85C, 85% RH 168Hrs 0/154 X Pass X Pass X Pass IR reflow 260C 3 cycles 0/154 X Pass X Pass X Pass HTOL Tj>125C, 100% Vcc 168 Hrs 0/77 X Pass QBS to Qual Device 3 X Pass QBS to Qual Device 3 X Pass QBS to Qual Device 3 X Pass TC 65C 150C 500 cycles 0/77 X Pass QBS to Qual Device 3 X Pass 1000 cycles 0/77 X Pass QBS to Qual Device 3 X Pass HAST 130C, 85%RH 33.3 psia 80% Bias 96 Hrs 0/77 X Pass QBS to Qual Device 3 X Pass HTSL 150C 168 Hrs 0/77 X Pass QBS to Qual Device 3 X Pass QBS to Qual Device 3 X Pass QBS to Qual Device 3 X Pass Latch up JESD78 250mA 0/6 X Pass QBS to Qual Device 3 X Pass ESD HBM (AEC Q ) + 2KV 0/3 X Pass QBS to Qual Device 3 X Pass MM ( AEC Q ) + 200V 0/3 X Pass QBS to Qual Device 3 X Pass WBP MIL STD Cpk>1.66 0/30 X Pass X Pass X Pass WBS JESD22 B116B Cpk>1.66 0/30 X Pass X Pass X Pass Doc # Revision

8 Eval Device 1 QBS Device 1 Part Number AH2984-YG-13 AH2984-YG-13 Package SOT89-5L SOT89-5L Die Name(s) A0197C0 A0197C0 Wafer FAB LSC LSC Wafer Diameter 6" 6" Bond Type (at Die) Ball Ball Bond Type (at LF) Wedge Wedge No. of bond over active area 0 0 Glass Transistion Temp Lead Material Manufacture ND ND Header plating (Die Land Area) Ag Ag Max Junction Temp Front Metal Type Die passivation thickness range Al alloy Target (98.5% Al+1.0% Si+0.5%Cu) SiO2 (0.6±0.03um) SiN (0.6±0.03um) Al alloy Target (98.5% Al+1.0% Si+0.5%Cu) SiO2 (0.6±0.03um) SiN (0.6±0.03um) No of masks Steps Die Size (W/L/Thickness) 1690*1300* *1300* Die Process / Technology CMOS/1um/40V/15V/2P2M CMOS/1um/40V/15V/2P2M Die Quantity (eg. Die per package) 1 1 DB Epoxy/Solder Type WBC Epoxy Die Attach Material 8006NS 84-1LMISR4 Wire Bond Material (Au, Cu, Al) Cu Au Wire Diameter 0.8 mil 1.2 mil Front Metal Thickness 1.5±0.1um 1.5±0.1um Leadframe Type SOT89-5L SOT89-5L Leadframe Material EFTEC 45-1/2H KFC Molding Compound Type G700 G600FB Green Compound (Yes/No) Yes Yes Lead-Free (Yes/No) Yes Yes Assembly Site SAT GTBF Test Site SAT SAT DataSheet AH2984 AH2984 Test Test Conditions Duration / Limits Fail/SS QBS Test Completed MSL1 Precond Bake 125C 24 Hrs 0/154 X Pass X Pass Soak 85C, 85% RH 168Hrs 0/154 X Pass X Pass IR reflow 260C 3 cycles 0/154 X Pass X Pass HTOL Tj>125C, 100% Vcc 168 Hrs 0/77 X Pass TC -65C-150C 500 cycles 0/77 X Pass X Pass 1000 cycles 0/77 X (for reference) Pass X Pass HAST 130C, 85%RH 33.3 psia 80% Bias 96 Hrs 0/77 X Pass X Pass HTSL 150C 168 Hrs 0/77 X Pass X Pass X Pass X Pass Latch-up JESD78 100mA 0/6 X Pass ESD HBM (AEC-Q ) +-2KV 0/3 X Pass MM ( AEC-Q ) +-200V 0/3 X Pass WBP MIL-STD Cpk>1.66 0/30 X Pass 0/25 WBS JESD22-B116B Cpk>1.66 0/30 X Pass 0/25 Char -40C, 0C, 25C, 85C, 125C Operating Range 0/30 X uploaded

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10 Test Eval Device 1 QBS Device 1 Part Number AH1807 P/AH1809 P AH1807-Z/AH1809-Z Package SIP3 SOT553 Package Size 3*4.1*1.5mm 1.6*1.6*0.58mm Die Name(s) A0221J0 / A0221I0 A0221J0 / A0221I0 Wafer FAB NTC NTC Wafer Diameter 6" 6" No. of bond over active area 3 3 Lead Material Manufacture NBKQ NBKQ Front Metal Type AlCu AlCu Die passivation thickness range Oxide 4kA, SiN 6kA Oxide 4kA, SiN 6kA No of masks Steps Die Size (W/L/Thickness) 1.05*0.7mm 1.05*0.7mm Die Process / Technology CMOS 5V, 0.5um, 2P2M CMOS 5V, 0.5um, 2P2M Die Quantity (eg. Die per package) 1 1 DB Epoxy/Solder Type Epoxy WBC Die Attach Material 84 1LMISR4 8006NS Wire Bond Material (Au, Cu, Al) Cu Au Wire Diameter 0.8mil 1mil Front Metal Thickness 0.8um 0.8um Leadframe Type SIP 3L SOT-666G Leadframe Material STAMPING ETCHING Molding Compound Type G600 CEL-1702HF9SK Green Compound (Yes/No) Yes Yes Lead Free (Yes/No) Yes Yes Assembly Site SAT SAT Test Site SAT SAT DataSheet AH1807 / AH1809 AH1807 / AH1809 Test Conditions Duration / Limits Fail/SS QBS Test Completed MSL1 Precond Bake 125C 24 Hrs 0/154 X Pass Soak 85C, 85% RH 168Hrs 0/154 X IR reflow 260C 3 cycles 0/154 X HTOL Tj>125C, 100% Vcc 168 Hrs 0/77 X Pass TC 65C 150C 500 cycles 0/77 X Pass 1000 cycles 0/77 X Pass HAST 130C, 85%RH 33.3 psia 80% Bias 96 Hrs 0/77 X Pass HTSL 150C 168 Hrs 0/77 X Pass Latch up JESD78 100mA 0/6 X Pass ESD HBM (AEC Q ) + 2KV 0/3 X Pass MM ( AEC Q ) + 200V 0/3 X Pass WBP MIL STD Cpk>1.66 0/30 X Pass WBS JESD22 B116B Cpk>1.66 0/30 X Pass PD JESD22 B100B Package Outline 0/30 X Pass Solderability 245C +0/5C 5 Seconds 0/10 X Pass

11 Eval Device 1 QBS Device 1 QBS Device 2 Part Number AH1806 Z/AH1808 Z AH1807 Z/AH1809 Z AH1806 Z/AH1808 Z AH1807 Z/AH1809 Z Package SOT553 SOT553 SOT553 Package Size 1.6*1.6*0.58mm 1.6*1.6*0.58mm 1.6*1.6*0.58mm Die Name(s) A0221H0 / A0221G0 A0221J0 / A0221I0 A0221F0(MOW wafer) A0221J0 / A0221I0 Wafer FAB NTC NTC NTC Wafer Diameter 6" 6" 6" No. of bond over active area Lead Material Manufacture NBKQ NBKQ NBKQ Front Metal Type AlCu AlCu AlCu Die passivation thickness range Oxide 4kA, SiN 6kA Oxide 4kA, SiN 6kA Oxide 4kA, SiN 6kA No of masks Steps Die Size (W/L/Thickness) 1.05*0.7mm 1.05*0.7mm 1.05*0.7mm Die Process / Technology CMOS 5V, 0.5um, 2P2M CMOS 5V, 0.5um, 2P2M CMOS 5V, 0.5um, 2P2M Die Quantity (eg. Die per package) DB Epoxy/Solder Type WBC WBC WBC Die Attach Material 8006NS 8006NS 8006NS Wire Bond Material (Au, Cu, Al) Cu Au Au Wire Diameter 0.8mil 1mil 1mil Front Metal Thickness 2um 2um 2um Leadframe Type SOT 666G SOT 666G SOT 666G Leadframe Material ETCHING ETCHING ETCHING Molding Compound Type CEL 1702HF9SK CEL 1702HF9SK CEL 1702HF9SK Green Compound (Yes/No) Yes Yes Yes Lead Free (Yes/No) Yes Yes Yes Assembly Site SAT SAT SAT Test Site SAT SAT SAT DataSheet AH1806 / AH1808 AH1807 / AH1809 AH1806 / AH1808 AH1807 / AH1809 Test Test Conditions Duration / Limits Fail/SS QBS Test Completed QBS Test Completed MSL1 Precond Bake 125C 24 Hrs 0/154 X Pass X Pass Soak k85c, 85% RH 168Hrs 0/154 X Pass X Pass IR reflow 260C 3 cycles 0/154 X Pass X Pass HTOL Tj>125C, 100% Vcc 168 Hrs 0/77 X Pass X Pass X Pass X Pass TC 65C 150C 500 cycles 0/77 X Pass X Pass 1000 cycles 0/77 X Pass HAST 130C, 85%RH 33.3 psia 80% Bias 96 Hrs 0/77 X Pass X Pass HTSL 150C 168 Hrs 0/77 X Pass X Pass X Pass X Pass Latch up JESD78 100mA 0/6 X Pass X Pass ESD HBM (AEC Q ) + 2KV 0/3 X Pass X Pass MM ( AEC Q ) + 200V 0/3 X Pass X Pass WBP MIL STD Cpk>1.66 0/30 X Pass X WBS JESD22 B116B Cpk>1.66 0/30 X Pass X

12 Qual Device 1 Part Number AH1751-RG-7-A AH1751-WG-7-A Package SC-59 Package Size 3.0*2.8*1.15 mm Die Name(s) AD B0 Wafer FAB LSC Wafer Diameter 150mm Bond Type (at Die) Ball Bond Type (at LF) Wedge No. of bond over active area 0 Glass Transistion Temp 130 degree C Max Junction Temp 150 degree C Max Thermal resistance Junc (case) Max Thermal resistance Junc (amibent) 57 degree C/W 251 degree C/W Device mound on FR-4, substrate PC board, with minimum recommended pad layout. Test Front Metal Type Die passivation thickness range Al/Cu SiO2 (0.6±0.03um) SiN (0.6±0.03um) No of masks Steps 8 Die Size (W/L/Thickness) (um) 960*960*350um Die Process / Technology Bipolar/2um/20V/SM Die Quantity (eg. Die per package) 1 DB Epoxy/Solder Type Epoxy Die Attach Material QMI519 Wire Bond Material (Au, Cu, Al) Cu Wire Diameter 0.8mil Front Metal Thickness 1.5um Leadframe Type SC-59D Leadframe Material SC-59D Molding Compound Type CEL-1700HF40-D3 Green Compound (Yes/No) Yes Lead-Free (Yes/No) Yes Assembly Site SAT Test Site SAT DataSheet AH1751 Test Conditions Duration / Limits Fail/SS MSL1 Pre-cond Bake 125C 24 Hrs 0/154 X Pass Soak 85C, 85% RH 168Hrs 0/154 X Pass IR reflow 260C 3 cycles 0/154 X Pass HTOL Tj>125C, 100% Vcc 168 Hrs 0/77 X Pass TC -65C-150C 500 cycles 0/77 X Pass 1000 cycles 0/77 X Pass HAST 130C, 85%RH 33.3 psia 80% Bias 96 Hrs 0/77 X Pass HTSL 150C 168 Hrs 0/77 X Pass Latch-up JESD78 250mA 0/6 X Pass ESD HBM (AEC-Q ) +-2KV 0/3 X Pass MM ( AEC-Q ) +-200V 0/3 X Pass WBP MIL-STD Cpk>1.66 0/30 X Pass WBS JESD22-B116B Cpk>1.66 0/30 X Pass Doc # Revision

13 Qual Device 1 Part Number AH180-WG-7 AH180-WG-7-P AH180-WG-7-26 Package SC-59 Package Size 3.0*2.8*1.15 mm Die Name(s) AD G0 Wafer FAB TSMC Wafer Diameter 150mm Bond Type (at Die) Ball Bond Type (at LF) Wedge No. of bond over active area 0 Glass Transistion Temp 135 degree C Max Junction Temp 150 degree C Max Thermal resistance Junc (case) 33 degree C/W Test Max Thermal resistance Junc (amibent) Front Metal Type Die passivation thickness range 231 degree C/W FR-4 PC board, 1*MRP, 1oz copper, single sided Al/Cu SiO2 2KA SiN 7KA No of masks Steps 14 Die Size (W/L/Thickness) (um) 800*800*305um Die Process / Technology CMOS/0.6um/5V/2P2M Die Quantity (eg. Die per package) 1 DB Epoxy/Solder Type Epoxy Die Attach Material QMI519 Wire Bond Material (Au, Cu, Al) Cu Wire Diameter 0.8mil Front Metal Thickness 1.8um Leadframe Type SC-59D Leadframe Material SC-59D Molding Compound Type CEL-1700HF40-D3 Green Compound (Yes/No) Yes Lead-Free (Yes/No) Yes Assembly Site SAT Test Site SAT DataSheet AH180 Test Conditions Duration / Limits Fail/SS MSL1 Precond Bake 125C 24 Hrs 0/154 X Pass Soak 85C, 85% RH 168Hrs 0/154 X Pass IR reflow 260C 3 cycles 0/154 X Pass HTOL Tj>125C, 100% Vcc 168 Hrs 0/77 X Pass TC -65C-150C 500 cycles 0/77 X Pass 1000 cycles 0/77 X Pass HAST 130C, 85%RH 33.3 psia 80% Bias 96 Hrs 0/77 X Pass HTSL 150C 168 Hrs 0/77 X Pass Latch-up JESD78 250mA 0/6 X Pass ESD HBM (AEC-Q ) +-2KV 0/3 X Pass MM ( AEC-Q ) +-200V 0/3 X Pass WBP MIL-STD Cpk>1.66 0/30 X Pass WBS JESD22-B116B Cpk>1.66 0/30 X Pass