PRODUCT/PROCESS CHANGE NOTIFICATION
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1 PRODUCT/PROCESS CHANGE NOTIFICATION PCN APM-IPC/08/3695 Notification Date 05/21/2008 TSM-BIPOLAR FAMILY - MSL3 (Moisture Sensitive Level) compliance for SOIC 8/14/16 leads in ST BSK2/STS/MUAR B-End plants IPC - IND.& POWER CONV. 1/11
2 PCN APM-IPC/08/ Notification Date 05/21/2008 Table 1. Change Implementation Schedule Forecasted implementation date for change Forecasted availabillity date of samples for customer Forecasted date for STMicroelectronics change Qualification Plan results availability Estimated date of changed product first shipment 14-May May May Aug-2008 Table 2. Change Identification Product Identification (Product Family/Commercial Product) Type of change Reason for change Description of the change TSM-Bipolar family as per attached list Logistics material (label & box) process standardization All TSM-BIPOLAR devices in SOIC 8/14/16 lds - ppf, std & mtx - which are manufactured in Bouskoura, Shenzhen and Muar plants will be packed in compliance with IPC/JEDEC J-STD-020C specs. In particular the activity is referring to MSL3 compliance. Product Line(s) and/or Part Number(s) Description of the Qualification Plan Change Product Identification See attached See attached dry-pack packing Manufacturing Location(s) 2/11
3 PCN APM-IPC/08/ Notification Date 05/21/2008 Table 3. List of Attachments Customer Part numbers list Qualification Plan results Customer Acknowledgement of Receipt PCN APM-IPC/08/3695 Please sign and return to STMicroelectronics Sales Office Notification Date 05/21/2008 Qualification Plan Denied Qualification Plan Approved Name: Title: Company: Change Denied Change Approved Date: Signature: Remark 3/11
4 PCN APM-IPC/08/ Notification Date 05/21/2008 DOCUMENT APPROVAL Name Gherdovich, Gabriele Gattavari, Giuseppe Motta, Antonino Function Division Marketing Manager Division Product Manager Division Q.A. Manager 4/11
5 ATTACHMENT TO PCN APM-IPC/08/3695 Product Line Commercial Product Finished good TSM102AID TSM102AID$9BF TSM102AID TSM102AID-LF TSM102AIDT TSM102AIDT$9BF TSM102AIDT TSM102AIDT-LF TSM102ID TSM102ID$9BF TSM102ID TSM102ID-LF TSM102IDT TSM102IDT$9BF TSM102IDT TSM102IDT-LF TSM103AID TSM103AID-LF/ TSM103AIDT TSM103AIDT-LF/ TSM103ID TSM103ID-LF/ TSM103IDT TSM103IDT-LF/ TSM104AID TSM104AID1-LF TSM104AIDT TSM104AID1T-LF TSM104WAID TSM104WAID1-LF TSM104WAIDT TSM104WAID1T-LF TSM106ID TSM106ID$DBE TSM106ID TSM106ID$DBF TSM106IDT TSM106IDT$DBE TSM106IDT TSM106IDT$DBF TSM109AID TSM109AID-LF/ TSM109AIDT TSM109AIDT-LF/ TSM109ID TSM109ID-LF/ TSM109IDT TSM109IDT-LF/ TSM111CD TSM111CD$9CF TSM111CDT TSM111CDT$9CF TSM103WAID TSM103WAID$DCE TSM103WAID TSM103WAID$KAE TSM103WAID TSM103WAID$KCE TSM103WAID TSM103WAID-LF/ TSM103WAIDT TSM103WAIDT$DCE TSM103WAIDT TSM103WAIDT$KAE TSM103WAIDT TSM103WAIDT$KCE TSM103WAIDT TSM103WAIDT-LF/ TSM103WID TSM103WID$DCE TSM103WID TSM103WID$KAE TSM103WID TSM103WID$KCE TSM103WIDT TSM103WIDT$DCE TSM103WIDT TSM103WIDT$KAE TSM103WIDT TSM103WIDT$KCE SL0101 TSM101ACD TSM101ACD$DCF SL0101 TSM101ACDT TSM101ACDT$DCF SL0101 TSM101AID TSM101AID$DCF SL0101 TSM101AIDT TSM101AIDT$DCF SL0101 TSM101CD TSM101CD$DCF SL0101 TSM101CDT TSM101CDT$DCF SL0101 TSM101ID TSM101ID$DCF SL0101 TSM101IDT TSM101IDT$DCF
6 MLD Industrial & Power Conversion - Q&R Back End Process Quality Assurance Page 1 of 06 Q&R Project date : 25-March-2008 Q&R Project Code : : RR000408CT6017 MSL (Moisture Sensitive Level) Evaluation for SOIC 8/14/16L PPF STD-MTX ST- BSK2/STS/MUAR B-END MANUFACTORING QUALITY & RELIABILITY EVALUATION REPORT Abstract This report is oriented to summarize latest activities( ) done in all ST manufacturing site (BSK2 MOROCCO-STS SHENZHEN-MUAR MALAYSIA) having as per object PKGS compliance Vs IPC/JEDEC J- STD-020C. In particular activity/report is referring to MSL@3 compliance. Conclusion The control of endurance to soldering heat has been done in accordance with the IPC/JEDEC 020-C standard. On the basis of the already achieved positive results; Workability & testing reports, Reliability evaluation, TSM BIP Family products were passed with positive results a MSL@3 stress conditioning. Issued by Francesco Ventura AMP-I&PC QA&R B-END Approved by Antonino Motta APM-IPC QA&R DIR.
7 MLD Industrial & Power Conversion - Q&R Back End Process Quality Assurance Page 2 of 06 Reliability test conditions and results for *0303 test vehicle SO8N PKG ST-STS N TEST NAME CONDITIONS [SPEC] SAMPLE SIZE DEFECTS* NOTES 1 Preconditioning JL3 24h 125 C 30 C / 60% RH IR reflow (3 times) 260 C [JEDEC J-STD-020C] 150 pcs 0* 1 * No delamination was discovered as per JEDEC STD-020C Device construction note *TSM103WAIDT DIE FEATURES PACKAGE FEATURES Die Code : EDO7*0303AC6 Technical code : O7 Diffusion process : Package name : SO 08 Wafer diameter : 5 Assembly site : ST-SHENZHEN Diffusion site : AMOKIO5 Leadframe / substrate : Frame SO8l 94 x 125 MTX Ni/Pd/Au 5Ft34342 Die size : 1940*2170 micron Die attach : Epoxy glue EN4900 ST10 Matal level : AlSi 1.00 micron Wire Bonding : Au D1 BL8-12g Intermetal dielectric : Molding compound : MP8000-CH42A Passivation : SiN Solder balls / plating : N/A Back finishing : Rawsilicon back grinding Assy lot : CZ5430A502 Diffusion lot : 65395FF :
8 MLD Industrial & Power Conversion - Q&R Back End Process Quality Assurance Page 3 of 06 Reliability test conditions and results for *0102 test vehicle SO16N PKG ST- MUAR N TEST NAME CONDITIONS [SPEC] SAMPLE SIZE DEFECTS* NOTES 1 Preconditioning JL3 24h 125 C 30 C / 60% RH IR reflow (3 times) 260 C [JEDEC J-STD-020C] 150 pcs 0* 1 * No delamination was discovered as per JEDEC STD-020C Device construction note *TSM102AIDT DIE FEATURES PACKAGE FEATURES Die Code : Technical code : Q7 Diffusion process : BIP Package name : SO 16 Wafer diameter : 6 Assembly site : ST MUAR Diffusion site : AMOKIO 6 Leadframe / substrate : Frame SO16 94 x 200 FLO Ni/Pd/Au 5FT34604 Die size : 1860*3400 micron Die attach : Epoxy glue EN4900 ST10 Matal level : AlSi 1.00 micron Wire Bonding : Au D1 BL8-12g Intermetal dielectric : Molding compound : MP8000-CH42A Passivation : (SION) Solder balls / plating : N/A Back finishing : Rawsilicon back grinding Assy lot : CZ5430A502 Diffusion lot : V :
9 MLD Industrial & Power Conversion - Q&R Back End Process Quality Assurance Page 4 of 06 Reliability test conditions and results for *0104 test vehicle SO16N PKG ST-BSK2 N TEST NAME CONDITIONS [SPEC] SAMPLE SIZE DEFECTS* NOTES 1 Preconditioning JL3 24h 125 C 30 C / 60% RH IR reflow (3 times) 260 C [JEDEC J-STD-020C] 150 pcs 0* 1 * No delamination was discovered as per JEDEC STD-020C Device construction note *TSM104WAIDT DIE FEATURES PACKAGE FEATURES Die Code : Technical code : Q7 Diffusion process : C6 BIP Package name : SO16L Wafer diameter : 6 Assembly site : ST-BOSKOURA 2000 Diffusion site : Leadframe / substrate : MHT 94 x 200 mils 5FT34604 FLO Ni/Pd/Au Die size : 1900 X 2700 µm Die attach : Hitachi EN4900 ST10 Matal level : 280 ± 25 µm Wire Bonding : 1.0 mils Intermetal dielectric : Molding compound : MP8000CH4-2A Passivation : NITRIDE (SiN) Solder balls / plating : N/A Back finishing : Raw Silicon (Back Assy lot : N/A Grinding) Diffusion lot : N/A : NOTES: FOR ALL THE ABOVE EVALUATIONS A SAM INSPECTION HAS BEEN PERFORMED AS FOLLOWING: 0 C-SAM (Top) C-SAM (Bot) T-SAM 0 Evaluation at t=0 1a 2 Evaluation after preconditioning ALL TRIALS PASSED C
10 MLD Industrial & Power Conversion - Q&R Back End Process Quality Assurance Page 5 of 06 JLn: Jedec Level n surface mounting simulation ATTACHMENT 1: RELIABILITY TEST DESCRIPTION TEST NAME DESCRIPTION PURPOSE The device is submitted to a typical temperature profile used for surface mounting, after a controlled moisture absorption. As stand-alone test: to investigate the level of moisture sensitivity. As preconditioning before other reliability tests: to verify that the surface mounting stress does not impact on the subsequent reliability performance. The typical failure modes are "pop corn" effect and delamination.
11 PCN APM-IPC/08/ Notification Date 05/21/2008 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND / OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE ( AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION ), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS AUTOMOTIVE GRADE MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners c 2008 STMicroelectronics - All rights reserved. STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morroco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 11/11
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TIP33C Complementary power transistors Features. Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose Description The devices are manufactured in epitaxial-base
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Low voltage fast-switching PNP power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed 3 Miniature SOT-23 plastic package for surface
2STR2215. Low voltage fast-switching PNP power transistor. Features. Applications. Description
Low voltage fast-switching PNP power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface
LS1240. Electronic two-tone ringer. Features. Description. Pin connection (top view)
Electronic two-tone ringer Features Low current consumption, in order to allow the parallel operation of 4 devices Integrated rectifier bridge with zener diodes to protect against over voltages little
2STA1695. High power PNP epitaxial planar bipolar transistor. Features. Applications. Description
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -140 V Complementary to 2STC4468 Typical f t = 20 MHz Fully characterized at 125 C Applications 1 2 3 Audio power
2STD1360 2STF1360-2STN1360
2STD1360 2STF1360-2STN1360 Low voltage fast-switching NPN power transistors Features Very low collector-emitter saturation voltage High current gain characteristic Fast-switching speed 4 1 2 3 4 1 3 2
STN9260. High voltage fast-switching PNP power transistor. Features. Applications. Description. High voltage capability Fast switching speed
High voltage fast-switching PNP power transistor Features High voltage capability Fast switching speed Applications Lighting Switch mode power supply Description This device is a high voltage fast-switching
Obsolete Product(s) - Obsolete Product(s)
P-channel 20V - 0.065Ω - 4.2A - SOT-223 2.5V - Drive STripFET II Power MOSFET General features Type V DSS R DS(on) I D STN5PF02V 20V
MD2310FX. High voltage NPN power transistor for standard definition CRT display. Features. Application. Description
High voltage NPN power transistor for standard definition CRT display Features State-of-the-art technology: diffused collector enhanced generation Stable performance versus operating temperature variation
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Low power single inverter gate Features High speed: t PD = 4.3 ns (max.) at V CC = 2.3 V Power down protection on inputs and outputs Balanced propagation delays: t PLH t PHL Operating voltage range: V
BULB7216 BUL7216. High voltage fast-switching NPN power transistor. Features. Applications. Description
BULB7216 BUL7216 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching
Obsolete Product(s) - Obsolete Product(s)
2 W mono amplifier Features 2 W output power into 8 Ω at 12 V, THD = 10% Internally fixed gain of 32 db No feedback capacitor No boucherot cell Thermal protection AC short-circuit protection SVR capacitor
AN3332 Application note
Application note Generating PWM signals using STM8S-DISCOVERY Application overview This application user manual provides a short description of how to use the Timer 2 peripheral (TIM2) to generate three
HCF4093. QUAD 2-input NAND Schmidt trigger. Features. Description
QUAD 2-input NAND Schmidt trigger Features Schmidt trigger action on each input with no external components Hysteresis voltage typically 0.9 V at V DD =5V and 2.3 V at V DD =10 V Noise immunity greater
DCPL-WB-02D3. Wide-band, dual-path directional coupler with integrated 50 ohm loaded isolated port. Features. Applications. Description.
Wide-band, dual-path directional coupler with integrated 50 ohm loaded isolated port Datasheet production data Features 50 Ω nominal input / output impedance Wide operating frequency range: 2400 MHz-5850
1N5908 SM5908. Transil. Features. Description. Complies with the following standards. Peak pulse power: Stand off voltage: 5 V Unidirectional
1N5908 SM5908 Transil Features Peak pulse power: 1500 W (10/1000 μs) Stand off voltage: 5 V Unidirectional A A Operating T jmax : 175 C High power capability at T jmax : 1500 W (10/1000 µs) JEDEC registered
2STR SOT-23 Tape and reel 2STR1230G 130G SOT-23 Tape and reel
Low voltage fast-switching NPN power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface
ESDALCL6-4P6A. Multi-line low capacitance and low leakage current ESD protection. Features. Applications. Description
Multi-line low capacitance and low leakage current ESD protection Features Datasheet production data Diode array topology: 4 lines protection Low leakage current: 10 na at 3 V 1 na at 1 V Very low diode
Obsolete Product(s) - Obsolete Product(s)
Dual NPN-PNP complementary Bipolar General features V CE(sat) h FE I C 0.35V >100 1A High gain Low V CE(sat) Simplified circuit design Reduced component count Applications Push-Pull or Totem-Pole configuration
CPL-WB-00C2. Wide band directional coupler with ISO port. Features. Applications. Description. Benefits
Wide band directional coupler with ISO port Features 50 Ω nominal input / output impedance Wide operating frequency range (824 MHz to 2170 MHz) Low Insertion Loss (< 0.2 db) 34 db typical coupling factor
AN2333 Application note
Application note White LED power supply for large display backlight Introduction This application note is dedicated to the STLD40D, it's a boost converter that operates from 3.0 V to 5.5 V dc and can provide
1. Drain 2. Gate. Order code Marking Package Packaging. STAC4932F STAC4932F STAC244F Plastic tray. September 2010 Doc ID Rev 3 1/12
RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features Excellent thermal stability Common source push-pull configuration P OUT = 1000 W min. (1200 W typ.) with 26 db gain @ 123 MHz
AN4014 Application Note Adjustable LED blinking frequency using a potentiometer and STM8SVLDISCOVERY Application overview
Application Note Adjustable LED blinking frequency using a potentiometer and STM8SVLDISCOVERY Application overview Note: This document introduces a very simple application example which is ideal for beginners
Order codes Marking Package Packaging
STX13003 High voltage fast-switching NPN power transistor Features High voltage capability Very high switching speed Applications Compact fluorescent lamps (CFLs) SMPS for battery charger Description The
TDA7233D 1W AUDIO AMPLIFIER WITH MUTE
1 AUDIO AMPLIFIER ITH MUTE 1 FEATURES OPERATING VOLTAGE 1.8 TO 15 V EXTERNAL MUTE OR POER DON FUNCTION IMPROVED SUPPLY VOLTAGE REJECTION LO QUIESCENT CURRENT HIGH POER CAPABILITY LO CROSSOVER DISTORTION
ST13003D-K High voltage fast-switching NPN power transistor Features Applications Description
High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation ery high switching speed Integrated antiparallel
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. 1.5A Low drop positive voltage regulator adjustable and fixed Feature summary
MD2009DFX. High voltage NPN power transistor for CRT TV. Features. Application. Description
High voltage NPN power transistor for CRT TV Features State-of-the-art technology: diffused collector enhanced generation Stable performance versus operating temperature variation Low base drive requirement
Obsolete Product(s) - Obsolete Product(s)
N-channel 30V - 0.020Ω - 6A - TSSOP8 2.5V-drive STripFET II Power MOSFET General features Type V DSS R DS(on) I D 30V < 0.025 Ω (@ 4.5 V) < 0.030 Ω (@ 2.7 V) 6A Ultra low threshold gate drive (2.5V) Standard
3STL2540. Low voltage high performance PNP power transistor. Features. Applications. Description
Low voltage high performance PNP power transistor Datasheet production data Features Very low collector-emitter saturation voltage High current gain characteristic Small, thin, leadless SMD plastic package
Order codes Temperature range Package Packaging
CMOS quad 3-state differential line driver Features TTL input compatible Typical propagation delay: 6 ns Typical output skew: 0.5 ns Output will not load line when V CC = 0 V Meets the requirements of
BUX98A. High power NPN transistor. Features. Applications. Description. High voltage capability High current capability Fast switching speed
High power NPN transistor Features High voltage capability High current capability Fast switching speed Applications High frequency and efficency converters Linear and switching industrial equipment Description