CONTENTS. PNPN Switch ET013/015/020. Thyristors. Triacs

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2 CUTION / RNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements in the performance, reliability, or manufacturability of its products. Before placing an order, Sanken advises its customers to obtain the latest version of the relevant information to verify that the information being relied upon is current. pplication and operation examples described in this catalog are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken or any third party which may result from its use. hen using the products herein, the applicability and suitability of such products for the intended purpose or object shall be reviewed at the users responsibility. lthough Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction. Sanken products listed in this catalog are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Before placing an order, the user s written consent to the specifications is requested. hen considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), please contact your nearest Sanken sales representative to discuss and obtain written confirmation of your specifications. The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited. nti radioactive ray design is not considered for the products listed herein. This publication shall not be reproduced in whole or in part without prior written approval from Sanken.

3 CONTENTS Notes regarding Storage, Characteristics inspection, and Handling precautions Part-numbering systems 3 Selection Guide Index by Part Number Thyristors General purpose, 3, TO- General purpose, 3, TO-F General purpose,, TO- General purpose,, TO-F General purpose,, TO- General purpose,, TO-F High sensitivity, 3, TO- High sensitivity,, TO-F rray, circuits, SIPPin For HID lamp ignition with built-in reverse diode, TO-S ith built-in valanche diode, 3, TO-F Triacs For inductive load, 3, TO- For inductive load, 3, TO-F For inductive load,, TO- For inductive load,, TO-F For inductive load,, TO- For inductive load,, TO-F For inductive load,, TO-F For inductive load,, TO-F For inductive load,, TO-F For inductive load,, TO-3P For inductive load,, TO-3PF For inductive load,, TO-3PF For resistive load, 3, TO-F For resistive load,, TO-F For resistive load,, TO-F For resistive load,, TO-F rray,. 3 circuits, SIPPin rray,. circuits, SIPPin TF3M/3M/3M TF3S/3S/3S TFM/M/M TFS/S/S TFM/M/M TFS/S/S TF3M-/3M-/3M- TFS-/S- SL TFCD TFD3S TM3M-L/3M-L TM3S-L/3S-L 3 TMM-L/M-L 3 TMS-L/S-L 3 TMM-L/M-L 3 TMS-L/S-L 3 TMS-L/S-L TMS-L/S-L TMS-L/S-L TMP-L(L)/P-L(L) TMB-L/B-L TMB-L/B-L TM3S-R/3S-R TMS-R/S-R TMS-R/S-R TMS-R/S-R ST3 ST PNPN Switch ET3// List of Discontinued Products

4 Notes regarding Storage, Characteristics inspection, and Handling precautions Since reliability can be affected adversely by improper storage environment and handling methods during Characteristic tests, please observe the following cautions. (a) Cautions for Storage. Ensure that storage conditions comply with the standard temperature ( to 3) and the standard relative humidity (around to 7%) and avoid storage locations that experience extreme changes in temperature or humidity.. void direct sunlight, and locations where dust or harmful gases are present. 3. Reinspect the product, which have been stored for a long time, for rust in leads and solderability. (b) Cautions for Characteristic Tests and Handling. hen characteristic tests are carried out on a product during an incoming inspection and other standard inspections, protect the product from surges of power from the test equipment, shorts beeen terminals, and faulty connections. void testing that exceeds standard ratings. (c) Silicone Grease hen silicone grease is used for mounting a product on a heat sink it should be applied on the product's back side and on both sides of the insulating plate in a thin and even way. Depending on the kinds of silicone grease, base oil permeates into the product, resulting in shortening product's service life. Therefore, careful selection should be made. Fastening Torque Package MT- (TO-) FM (TO-F) MT- (TO-3P) FM (TO-3PF) Fastening Torque.9 to.n m ( to 7kgf cm). to.n m (7 to 9kgf cm) * hen the surface of the heatsink where the Full Mold package is to be mounted is not flat and/or burrs exist around the mounting hole of the heatsink, the resin of the package might be cracked even if the torque is lower than the recommended value. * hen a screw is fastened with an air driver for the Full Mold package, a large impact is generated at the time of stop, and the resin may crack even if the torque is lower than the recommended value. n electric driver, therefore, should be used instead of an air driver. (e) Soldering Temperature In general, the product is subjected to high temperature when it is mounted on the printed circuit board, mainly whether by either flow solder from a Solderbath or manual soldering with a soldering iron. The testing method and conditions (JIS-C-7 standards) for the product s heat resistance during soldering are: pply for seconds, and 3 for 3 seconds at a distance of.mm from the product's body. It is highly recommended soldering in as short a time as possible under the conditions. Recommended Silicone Grease G-7 Shin-Etsu Chemical Co., Ltd. YG GE Toshiba Silicones Co., Ltd. SC Dow Corning Toray Silicone Co., Ltd. (d) Fastening Torque hen fastening torque is lower than recommended, thermal resistance increases and radiation effects decrease. On the contrary, when it is too high, the screw might be cut down and / or the heat sink might be deformed. s a result of that, distortion of the product's frame could arise. In order to avoid these problems, recommended fastening torque for each product type is shown in the following.

5 Part-Numbering Systems (except for rray and PNPN Switch) Ex. TMS-L TM S - L Commutation characteristic, etc. TF series (thyristor) : High sensitivity type TFD series (Thyristor with built-in valanche diode) BO rank indication (See selection guide) TM series (triac) L: For inductive load R: For resistive load ersion No. Package M: TO- (MT-) S: TOF (FM) P: TO-3P (MT-) B: TO-3PF (FM) Reverse voltage Ex.: Current rating Ex.: dd function C: ith built-in reverse diode D: ith built-in valanche diode Product series TF: Reverse blocking three-terminal thyristor TM: Bidirection three-terminal thyristor (triac) 3

6 Selection Guide Thyristors Type General purpose High sensitivity rray Rated Current Reverse oltage TF3M TF3M TF3S TF3S TFM TFM TFS TFS TFM TFM TFS TFS TF3M- TF3M- TFS- Thyristor with built-in reverse diode for HID lamp ignition DRM () 3 3 circuits ITRM () di/dt TF3M TF3S TFM TFS TFM TFS TF3M- TFS- SL Part number I GT (m) max.. Package TO- TO-F TO- TO-F TO- TO-F TO- TO-F SLPin Package 3 /µs TFCD TO-F Page UL approved type available Page Thyristor with built-in valanche diode BO () DRM () 3±3 ± 3 ± ± ± ± 7± ± 7 ± 9 Part number TFD3S-C TFD3S-F TFD3S-G TFD3S-J TFD3S-K TFD3S-L TFD3S-M TFD3S-N TFD3S-O IT() () 3 Package TO-F Page Triacs (Bidirection three-terminal thyristor) Type For inductive load For resistive load rray PNPN Swich BO () Rated Current Reverse oltage I GT (m) max Package Page 3 TM3M-L TM3M-L TO- TM3S-L TM3S-L TO-F 3 TMM-L TMM-L TO- 3 TMS-L TMS-L TO-F 3 TMM-L TMM-L 3 TO- 3 TMS-L TMS-L 3 TO-F 3 TMS-L TMS-L 3 TO-F TMS-L TMS-L 3 TO-F TMS-L TMS-L 3 TO-F TMP-L(L) TMP-L (L) 3 TO-3P TMB-L TMB-L 3 TO-3PF TMB-L TMB-L 3 TO-3PF 3 TM3S-R TM3S-R TO-F TMS-R TMS-R TO-F TMS-R TMS-R 7 TO-F TMS-R TMS-R TO-F. 3 circuits ST3 3 STPin. circuits ST 3 STPin UL approved type available DRM () to to 7 to 7 9 to 7 7 Part number ET3 ET ET ET IT(RMS) () Package. xial Page

7 Index by Part Number Part number Explanation Page ET3 ET ET SL ST3 ST TF3M TF3M- TF3S TF3M TF3M- TF3S TF3M TF3M- TF3S TFM TFS TFM TFS TFS- TFM TFS TFS- TFM TFS TFM TFS TFM TFS TFCD TFD3S-C TFD3S-F TFD3S-G TFD3S-J TFD3S-K TFD3S-L TFD3S-M TFD3S-N TFD3S-O TMS-L TMS-R TMS-L TMS-R TMS-L TMS-R TMS-L TMS-R TMB-L TMP-L(L) TMS-L TMB-L TMP-L(L) TMS-L TMB-L TMB-L TM3M-L TM3S-L TM3S-R TM3M-L TM3S-L TM3S-R TMM-L TMS-L TMS-R TMM-L TMS-L TMS-R TMM-L TMS-L TMM-L TMS-L PNPN Switch, BO= to 3, xial package PNPN Switch, BO= to 7, xial package PNPN Switch, BO=9 to, xial package Thyristor array,, circuits, SIPPin package Triac array,,. 3 circuits, SIPPin package Triac array,,. circuits, SIPPin package General purpose thyristor,, 3, TO- package High sensitivity thyristor,, 3, TO- package General purpose thyristor,, 3, TO-F package General purpose thyristor,, 3, TO- package High sensitivity thyristor,, 3, TO- package General purpose thyristor,, 3, TO-F package General purpose thyristor,, 3, TO- package High sensitivity thyristor,, 3, TO- package General purpose thyristor,, 3, TO-F package General purpose thyristor,,, TO- package General purpose thyristor,,, TO-F package General purpose thyristor,,, TO- package General purpose thyristor,,, TO-F package High sensitivity thyristor,,, TO-F package General purpose thyristor,,, TO- package General purpose thyristor,,, TO-F package High sensitivity thyristor,,, TO-F package General purpose thyristor,,, TO- package General purpose thyristor,,, TO-F package General purpose thyristor,,, TO- package General purpose thyristor,,, TO-F package General purpose thyristor,,, TO- package General purpose thyristor,,, TO-F package Thyristor with built-in reverse diode for HID lamp ignition, TO-S package Thyristor with built-in avalanche diode, 3, BO=3, TO-F package Thyristor with built-in avalanche diode, 3, BO=, TO-F package Thyristor with built-in avalanche diode, 3, BO=, TO-F package Thyristor with built-in avalanche diode, 3, BO=, TO-F package Thyristor with built-in avalanche diode, 3, BO=, TO-F package Thyristor with built-in avalanche diode, 3, BO=, TO-F package Thyristor with built-in avalanche diode, 3, BO=7, TO-F package Thyristor with built-in avalanche diode, 3, BO=, TO-F package Thyristor with built-in avalanche diode, 3, BO=, TO-F package Triac for inductive load,,, TO-F package Triac for resistive load,,, TO-F package Triac for inductive load,,, TO-F package Triac for resistive load,,, TO-F package Triac for inductive load,,, TO-F package Triac for resistive load,,, TO-F package Triac for inductive load,,, TO-F package Triac for resistive load,,, TO-F package Triac for inductive load,,, TO-3PF package Triac for inductive load,,, TO-3P package Triac for inductive load,,, TO-F package Triac for inductive load,,, TO-3PF package Triac for inductive load,,, TO-3P package Triac for inductive load,,, TO-F package Triac for inductive load,,, TO-3PF package Triac for inductive load,,, TO-3PF package Triac for inductive load,, 3, TO- package Triac for inductive load,, 3, TO-F package Triac for resistive load,, 3, TO-F package Triac for inductive load,, 3, TO- package Triac for inductive load,, 3, TO-F package Triac for resistive load,, 3, TO-F package Triac for inductive load,,, TO- package Triac for inductive load,,, TO-F package Triac for resistive load,,, TO-F package Triac for inductive load,,, TO- package Triac for inductive load,,, TO-F package Triac for resistive load,,, TO-F package Triac for inductive load,,, TO- package Triac for inductive load,,, TO-F package Triac for inductive load,,, TO- package Triac for inductive load,,, TO-F package

8 TO- 3 Thyristor TF3M / TF3M / TF3M Features Repetitive peak off-state voltage: DRM=,, verage on-state current: IT()=3 : IGT=m max External Dimensions (: mm).max.7max. ±. 3. ±. a b φ3.7 ±..max.max. min.max.3 ± ±.. ±..7 ±. () () (3) (). Cathode(K) (). node () (3). Gate (G) a. Part Number b. Lot Number eight: pprox..g bsolute Maximum TF3M TF3M TF3M Repetitive peak off-state voltage DRM Repetitive peak reverse voltage RRM Non-repetitive peak off-state voltage DSM 3 7 Non-repetitive peak reverse voltage RSM 3 7 verage on-state current IT() 3. RMS on-state current IT(RMS).7 Surge on-state current Peak forward gate current IFGM. Peak forward gate voltage FGM Peak reverse gate voltage RGM. Peak gate power loss PGM. verage gate power loss PG(). Junction temperature Tj to + Storage temperature Tstg to + Tj= to +, RGK=kΩ Hz Half-cycle sinewave, Continuous current, Tc= Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj= f Hz, duty % f Hz f Hz, duty % Electrical Characteristics Off-state current Reverse current On-state voltage Gate non-trigger voltage Holding current Critical rate-of-rise of off-state voltage Turn-off time Thermal resistance IDRM IRRM TM GT IGT GD IH dv/dt tq Rth min. typ.. 3 max m m m m /µs µs / Tj=, D=DRM(RRM), RGK=kΩ TC=, ITM= D=, RL=Ω, TC= D=/ DRM, Tj=, RGK=kΩ RGK=kΩ, Tj= D=/ DRM, Tj=, RGK=kΩ, CGK=.33µF Tc= Junction to case

9 TF3M / TF3M / TF3M On-state current it () vt it Characteristics (max) Tj = Tj = On-state voltage vt () Surge on-state current () Initial junction temperature Tj= ms cycle Number of cycle Gate Characteristics Gate voltage vgf () PGM= GT () See graph at the upper right IGT (m) 3 Gate current igf () Tj= Tj= Tj= 3 verage on-state power PT() () IT() PT() Characteristics 3 Hz Half-cycle sinewave θ: Conduction angle θ θ=3 9 DC IT() Tc Case temperature TC () 7 θ=3 9 Hz Half-cycle sinewave θ: Conduction angle θ DC 3 verage on-state current IT() () 3 verage on-state current IT() () Pulse trigger temperature Characteristics vgt ( ) voltage at GT ( ) at Ta and vgt 3. TC= vgt % Pulse trigger temperature Characteristics igt ( ) current at igt IGT ( ) at Ta and 3. TC= 7 igt %.. 3 IH temperature Characteristics Holding current IH (m) (RGK=kΩ) 7 Junction temperature Tj () GT temperature Characteristics. GT () (D=, RL=Ω) Junction temperature Tj () IGT temperature Characteristics IGT (m) 3 (D=, RL=Ω) 7 Junction temperature Tj () Transient thermal resistance Characteristics (Junction to case). 3 t, Time (ms) Transient thermal resistance rth (/) 7

10 TO-F 3 Thyristor TF3S, TF3S, TF3S Features Repetitive peak off-state voltage: DRM=,, verage on-state current: IT()=3 : IGT=m max Isolation voltage: ISO=(Hz Sine wave, RMS) External Dimensions (: mm).9 ±.3 3.min φ3.3 ±.. ±. 3.9 ±.. ±.. ±. a b. ±.. ±..3 ±..3 ± C ±. () () (3) (). Cathode(K) (). node () (3). Gate (G). ±. a. Part Number b. Lot Number eight: pprox..g bsolute Maximum TF3S TF3S TF3S Repetitive peak off-state voltage DRM Repetitive peak reverse voltage RRM Non-repetitive peak off-state voltage DSM 3 7 Non-repetitive peak reverse voltage RSM 3 7 verage on-state current IT () 3. RMS on-state current IT (RMS).7 Surge on-state current Peak forward gate current IFGM. Peak forward gate voltage FGM Peak reverse gate voltage RGM. Peak gate power loss PGM. verage gate power loss PG(). Junction temperature Tj to + Storage temperature Tstg to + Isolation voltage ISO Tj= to +, RGK=kΩ Hz Half-cycle sinewave, Continuous current, Tc=93 Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj= f Hz, duty % f Hz f Hz, duty % Hz Sine wave, RMS, Terminal to Case, min. Electrical Characteristics Off-state current Reverse current IDRM IRRM min typ max.. m m Tj=, D=DRM(RRM), RGK=kΩ On-state voltage Gate non-trigger voltage Holding current Critical rate-of-rise of off-state voltage Turn-off time Thermal resistance TM GT IGT GD IH dv/dt tq Rth m m /µs µs / TC=, ITM= D=, RL=Ω, TC= D=/ DRM, Tj=, RGK=kΩ RGK=kΩ, Tj= D=/ DRM, Tj=, RGK=kΩ, CGK=.33µF Tc= Junction to case

11 TF3S, TF3S, TF3S 9

12 TO- Thyristor TFM, TFM, TFM Features Repetitive peak off-state voltage: DRM=,, verage on-state current: IT()= : IGT=m max External Dimensions (: mm).max.7max. ±. 3. ±. a b φ3.7 ±..max.max. min.max.3 ± ±.. ±..7 ±. () () (3) (). Cathode(K) (). node () (3). Gate (G) a. Part Number b. Lot Number eight: pprox..g bsolute Maximum TFM TFM TFM Repetitive peak off-state voltage DRM Repetitive peak reverse voltage RRM Non-repetitive peak off-state voltage DSM 3 7 Non-repetitive peak reverse voltage RSM 3 7 verage on-state current IT(). RMS on-state current IT(RMS) 7. Surge on-state current Peak forward gate current IFGM. Peak forward gate voltage FGM Peak reverse gate voltage RGM. Peak gate power loss PGM. verage gate power loss PG (). Junction temperature Tj to + Storage temperature Tstg to + Tj= to +, RGK=kΩ Hz Half-cycle sinewave, Continuous current, Tc=9 Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj= f Hz, duty % f Hz f Hz, duty % Electrical Characteristics Off-state current Reverse current On-state voltage Gate non-trigger voltage Holding current Critical rate-of-rise of off-state voltage Turn-off time Thermal resistance IDRM IRRM TM GT IGT GD IH dv/dt tq Rth min. typ max m m m m /µs µs / Tj=, D=DRM(RRM), RGK=kΩ TC=, ITM= D=, RL=Ω, TC= D=/ DRM, Tj=, RGK=kΩ RGK=kΩ, Tj= D=/ DRM, Tj=, RGK=kΩ, CGK=.33µF Tc= Junction to case

13 TFM, TFM, TFM vt it Characteristics (max) On-state current it (). Tj = Tj = On-state voltage vt () Surge on-state current () Initial junction temperature Tj= ms cycle Number of cycle Gate Characteristics Gate voltage vgf () PGM= GT () See graph at the upper right 3 3 Gate current igf () Tj= Tj= Tj= IGT (m) verage on-state power PT() () IT() PT() Characteristics 7 3 Hz Half-cycle sinewave θ : Conduction angle θ θ=3 9 DC IT() Tc Case temperature TC () 7 θ=3 9 Hz Half-cycle sinewave θ: Conduction angle θ DC verage on-state current IT() () verage on-state current IT() () Pulse trigger temperature Characteristics vgt ( ) voltage at vgt GT ( ) at Ta and 3. TC= 7 vgt % Pulse trigger temperature Characteristics igt ( ) current at TC= igt IGT ( ) at Ta and 3. igt % IH temperature Characteristics Holding current IH (m) 3 (RGK=kΩ) 7 Junction temperature Tj () GT temperature Characteristics. GT () (D=, RL=Ω) Junction temperature Tj () IGT temperature Characteristics IGT (m) (D=, RL=Ω) 7 Junction temperature Tj () Transient thermal resistance Characteristics (Junction to case). 3 t, Time (ms) Transient thermal resistance rth (/)

14 TO-F Thyristor TFS, TFS, TFS Features Repetitive peak off-state voltage: DRM=,, verage on-state current: IT()= : IGT=m max Isolation voltage: ISO=(Hz Sine wave, RMS) UL approved type available External Dimensions (: mm).9 ±.3 3.min φ3.3 ±.. ±. 3.9 ±.. ±.. ±. a b. ±.. ±..3 ±..3 ± C ±. () () (3) (). Cathode(K) (). node () (3). Gate (G). ±. a. Part Number b. Lot Number eight: pprox..g bsolute Maximum TFS TFS TFS Repetitive peak off-state voltage DRM Repetitive peak reverse voltage RRM Non-repetitive peak off-state voltage DSM 3 7 Non-repetitive peak reverse voltage RSM 3 7 verage on-state current IT(). RMS on-state current IT(RMS) 7. Surge on-state current Peak forward gate current IFGM. Peak forward gate voltage FGM Peak reverse gate voltage RGM. Peak gate power loss PGM. verage gate power loss PG(). Junction temperature Tj to + Storage temperature Tstg to + Isolation voltage ISO Tj= to +, RGK=kΩ Hz Half-cycle sinewave, Continuous current, Tc=7 Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj= f Hz, duty % f Hz f Hz, duty % Hz Sine wave, RMS, Terminal to Case, min. Electrical Characteristics Off-state current Reverse current On-state voltage IDRM IRRM TM min typ max... m m Tj=, D=DRM(RRM), RGK=kΩ TC=, ITM= Gate non-trigger voltage Holding current Critical rate-of-rise of off-state voltage Turn-off time Thermal resistance GT IGT GD IH dv/dt tq Rth m m /µs µs / D=, RL=Ω, TC= D=/ DRM, Tj=, RGK=kΩ RGK=kΩ, Tj= D=/ DRM, Tj=, RGK=kΩ, CGK=.33µF Tc= Junction to case

15 TFS, TFS, TFS vt it Characteristics (max) On-state current it () Tj = Tj = On-state voltage vt () Number of cycle Surge on-state current () Hz Initial junction temperature Tj= ms cycle Gate Characteristics Gate voltage vgf () PGM= GT () IGT (m) 3 Gate current igf () See graph at the upper right Tj= Tj= Tj= 3 IT() PT() Characteristics verage on-state power PT() () Hz Half-cycle sinewave θ : Conduction angle θ θ=3 9 DC IT() Tc Case temperature TC () 7 θ=3 9 Hz Half-cycle sinewave θ : Conduction angle θ DC verage on-state current IT() () verage on-state current IT() () Pulse trigger temperature Characteristics vgt ( ) voltage at vgt GT ( ) at Ta and.... Tj = 7. vgt Pulse trigger temperature Characteristics igt ( ) current at igt IGT ( ) at Ta and 3. Tj = 7 igt IH temperature Characteristics Junction temperature Tj () Holding current IH (m) (D=3, RGK=kΩ) GT temperature Characteristics. GT () (D=, RL=Ω) Junction temperature Tj () IGT temperature Characteristics IGT (m) 3 3 (D=, RL=Ω) 7 Junction temperature Tj () Transient thermal resistance Characteristics (Junction to case) Transient thermal resistance rth (/). 3 t, Time (ms) 3

16 TO- Thyristor TFM, TFM, TFM Features Repetitive peak off-state voltage: DRM=,, verage on-state current: IT()= : IGT=m max External Dimensions (: mm).max.7max. ±. 3. ±. a b φ3.7 ±..max.max. min.max.3 ± ±.. ±..7 ±. () () (3) (). Cathode(K) (). node () (3). Gate (G) a. Part Number b. Lot Number eight: pprox..g bsolute Maximum TFM TFM TFM Repetitive peak off-state voltage DRM Repetitive peak reverse voltage RRM Non-repetitive peak off-state voltage DSM 3 7 Non-repetitive peak reverse voltage RSM 3 7 verage on-state current IT(). RMS on-state current IT(RMS). Surge on-state current Peak forward gate current IFGM. Peak forward gate voltage FGM Peak reverse gate voltage RGM. Peak gate power loss PGM. verage gate power loss PG (). Junction temperature Tj to + Storage temperature Tstg to + Tj= to +, RGK=kΩ Hz Half-cycle sinewave, Continuous current, Tc=3 Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj= f Hz, duty % f Hz f Hz, duty % Electrical Characteristics Off-state current Reverse current IDRM IRRM min typ max.. m m Tj=, D=DRM(RRM), RGK=kΩ On-state voltage TM. TC=, ITM= Gate non-trigger voltage Holding current Critical rate-of-rise of off-state voltage Turn-off time Thermal resistance GT IGT GD IH dv/dt tq Rth m m /µs µs / D=, RL=Ω, TC= D=/ DRM, Tj=, RGK=kΩ RGK=kΩ, Tj= D=/ DRM, Tj=, RGK=kΩ, CGK=.33µF Tc= Junction to case

17 TFM, TFM, TFM vt it Characteristics (max) On-state current it (). Tj= Tj= On-state voltage vt () Surge on-state current () Initial junction temperature Tj= ms cycle Number of cycle Gate Characteristics Gate voltage vgf () PGM= GT () See graph at the upper right 3 IGT (m) 3 Gate current igf () Tc= Tc= Tc= IT() PT() Characteristics verage on-state power PT() () Hz Half-cycle sinewave θ : Conduction angle θ θ=3 9 DC IT() Tc Case temperature TC () 7 θ=3 9 Hz Half-cycle sinewave θ: Conduction angle θ DC verage on-state current IT() () verage on-state current IT() () Pulse trigger temperature Characteristics vgt ( ) voltage at vgt GT ( ) at Ta and 3 TC= 7 vgt % Pulse trigger temperature Characteristics igt ( ) current at TC= igt IGT ( ) at Ta and 3 igt % IH temperature Characteristics Holding current IH (m) (RGK=kΩ) 7 Case temperature Tc () GT temperature Characteristics. GT () (D=, RL=Ω) Junction temperature Tj () IGT temperature Characteristics IGT (m) (D=, RL=Ω) 7 Junction temperature Tj () Transient thermal resistance Characteristics (Junction to case) Transient thermal resistance rth (/). 3 t, Time (ms)

18 TO-F Thyristor TFS, TFS, TFS Features Repetitive peak off-state voltage: DRM=,, verage on-state current: IT()= : IGT=m max Isolation voltage: ISO=(Hz Sine wave, RMS) UL approved type available External Dimensions (: mm).9 ±.3 3.min φ3.3 ±.. ±. 3.9 ±.. ±.. ±. a b. ±.. ±..3 ±..3 ± C ±. () () (3) (). Cathode(K) (). node () (3). Gate (G). ±. a. Part Number b. Lot Number eight: pprox..g bsolute Maximum TFS TFS TFS Repetitive peak off-state voltage DRM Repetitive peak reverse voltage RRM Non-repetitive peak off-state voltage DSM 3 7 Non-repetitive peak reverse voltage RSM 3 7 verage on-state current IT(). RMS on-state current IT(RMS). Surge on-state current Peak forward gate current IFGM. Peak forward gate voltage FGM Peak reverse gate voltage RGM. Peak gate power loss PGM. verage gate power loss PG(). Junction temperature Tj to + Storage temperature Tstg to + Isolation voltage ISO Tj= to +, RGK=kΩ Hz Half-cycle sinewave, Continuous current, Tc=7 Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj= f Hz, duty % f Hz f Hz, duty % Hz Sine wave, RMS, Terminal to Case, min. Electrical Characteristics Off-state current Reverse current On-state voltage Gate non-trigger voltage Holding current Critical rate-of-rise of off-state voltage Turn-off time Thermal resistance IDRM IRRM TM GT IGT GD IH dv/dt tq Rth min. typ.. 3 max m m m m /µs µs / Tj=, D=DRM(RRM), RGK=kΩ TC=, ITM= D=, RL=Ω, TC= D=/ DRM, Tj=, RGK=kΩ RGK=kΩ, Tj= D=/ DRM, Tj=, RGK=kΩ, CGK=.33µF Tc= Junction to case

19 TFS, TFS, TFS vt it Characteristics (max) Gate Characteristics On-state current it () Tj = Tj = Surge on-state current () Hz Initial junction temperature Tj= ms cycle Gate voltage vgf () PGM= GT () See graph at the upper right Tj= Tj= Tj= 3 IGT (m) On-state voltage vt () Number of cycle 3 Gate current igf () IT() PT() Characteristics IT() Tc verage on-state power PT() () Hz Half-cycle sinewave θ : Conduction angle θ θ=3 9 DC Case temperature TC () 7 θ=3 9 Hz Half-cycle sinewave θ : Conduction angle θ DC verage on-state current IT() () verage on-state current IT() () Pulse trigger temperature Characteristics vgt ( ) voltage at vgt GT ( ) at Ta and... Tj = 7.. vgt Pulse trigger temperature Characteristics igt ( ) current at igt IGT ( ) at Ta and 3. Tj = 7.. igt IH temperature Characteristics Holding current IH (m) (D=3, RGK=kΩ) 3 7 Junction temperature Tj () GT temperature Characteristics. GT ().... (D=, RL=Ω) 7 Junction temperature Tj () IGT temperature Characteristics IGT (m) 3 3 (D=, RL=Ω) 7 Junction temperature Tj () Transient thermal resistance Characteristics (Junction to case) Transient thermal resistance rth (/). 3 t, Time (ms) 7

20 TO- 3 High sensitive Thyristor TF3M-, TF3M-, TF3M- Features Repetitive peak off-state voltage: DRM=,, verage on-state current: IT()=3 High sensitive Gate trigger Current: IGT=.m max External Dimensions (: mm).max.7max. ±. 3. ±. a b φ3.7 ±..max.max. min.max.3 ± ±.. ±..7 ±. () () (3) (). Cathode(K) (). node () (3). Gate (G) a. Part Number b. Lot Number eight: pprox..g bsolute Maximum TF3M- TF3M- TF3M- Repetitive peak off-state voltage DRM Repetitive peak reverse voltage RRM Non-repetitive peak off-state voltage DSM 3 7 Non-repetitive peak reverse voltage RSM 3 7 verage on-state current IT() 3. RMS on-state current IT(RMS).7 Surge on-state current Peak forward gate current IFGM. Peak forward gate voltage FGM Peak reverse gate voltage RGM. Peak gate power loss PGM. verage gate power loss PG (). Junction temperature Tj to + Storage temperature Tstg to + Tj= to +, RGK=kΩ Hz Half-cycle sinewave, Continuous current, Tc=7 Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj= f Hz, duty % f Hz f Hz, duty % Electrical Characteristics Off-state current Reverse current On-state voltage Gate non-trigger voltage Holding current Critical rate-of-rise of off-state voltage Turn-off time Thermal resistance IDRM IRRM TM GT IGT GD IH dv/dt tq Rth min. typ. 3 max m m m m /µs µs / Tj=, D=DRM(RRM), RGK=kΩ TC=, ITM= D=, RL=Ω, TC= D=/ DRM, Tj=, RGK=kΩ RGK=kΩ, Tj= D=/ DRM, Tj=, RGK=kΩ, CGK=.33µF Tc= Junction to case

21 TF3M-, TF3M-, TF3M- vt it Characteristics (max) On-state current it (). Tj= Tj= On-state voltage vt () Surge on-state current () Initial junction temperature Tj= ms cycle Gate Characteristics 3 Number of cycle Gate current igf () Gate voltage vgf () PGM= verage on-state power PT() () IT() PT() Characteristics 7 3 Hz Half-cycle sinewave θ : Conduction angle θ θ=3 9 DC IT() Tc Case temperature TC () 7 θ=3 9 Hz Half-cycle sinewave θ : Conduction angle θ DC 3 verage on-state current IT() () 3 verage on-state current IT() () Pulse trigger temperature Characteristics vgt ( ) voltage at vgt % Pulse trigger temperature Characteristics igt ( ) current at igt % vgt GT ( ) at Ta and. 3 igt IGT ( ) at Ta and. 3 GT temperature Characteristics. GT () (D=, RL=Ω) Junction temperature Tj () IGT temperature Characteristics IGT (µ) (D=, RL=Ω) 7 Junction temperature Tj () Transient thermal resistance Characteristics (Junction to case) Transient thermal resistance rth (/). 3 t, Time (ms) 9

22 TO-F High sensitive Thyristor TFS-,TFS- Features Repetitive peak off-state voltage: DRM=, verage on-state current: IT()= High sensitive : IGT=.m max Isolation voltage: ISO=(Hz Sine wave, RMS) External Dimensions (: mm).9 ±.3 3.min φ3.3 ±.. ±. 3.9 ±.. ±.. ±. a b. ±.. ±..3 ±..3 ± C ±. () () (3) (). Cathode(K) (). node () (3). Gate (G). ±. a. Part Number b. Lot Number eight: pprox..g bsolute Maximum TFS- TFS- Repetitive peak off-state voltage DRM Repetitive peak reverse voltage RRM Non-repetitive peak off-state voltage DSM Non-repetitive peak reverse voltage RSM verage on-state current IT() RMS on-state current IT(RMS) Surge on-state current Peak forward gate current IFGM Peak forward gate voltage FGM Peak reverse gate voltage RGM Peak gate power loss PGM verage gate power loss PG() Junction temperature Tj Storage temperature Tstg to + to + Isolation voltage ISO Tj= to +, RGK=7Ω Hz Half-cycle sinewave, Continuous current, Tc= Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj= f Hz, duty % f Hz f Hz, duty % Hz Sine wave, RMS, Terminal to Case, min. Electrical Characteristics Off-state current Reverse current On-state voltage Gate non-trigger voltage Holding current Critical rate-of-rise of off-state voltage Turn-off time Thermal resistance IDRM IRRM TM GT IGT GD IH dv/dt tq Rth min. typ.3. 3 max m m m m /µs µs / Tj=, D=DRM(RRM), RGK=kΩ TC=, ITM= D=, RL=Ω, TC= D=/ DRM, Tj=, RGK=kΩ RGK=kΩ, Tj= D=/ DRM, Tj=, RGK=kΩ, CGK=.33µF Tc= Junction to case

23 TFS-,TFS-

24 circuits Thyristor array SL Features Thyristors combined one package Repetitive peak off-state voltage: DRM= verage on-state current: IT()= : IGT=m max External Dimensions (: mm). ±. 9.min (.) 3. ±. 3. ±. 3. φ3. ±.. ±.. ±.. ±..7 ±. 3. ±. 9.9 ±..max.7 a b Pin +.. ±.... ± P. ±.7 =7.9 ±. 3.max G K G K G K G K.max a. Part Number b. Lot Number Thy Thy Thy3 Thy 3 7 9,, 7, : Gate (G),,, : Cathode (K) 3,, 9, : node () eight: pprox..g bsolute Maximum Repetitive peak off-state voltage DRM Repetitive peak reverse voltage RRM Non-repetitive peak off-state voltage DSM Tj= to +, RGK=kΩ Non-repetitive peak reverse voltage verage on-state current RMS on-state current Surge on-state current RSM IT() IT(RMS). 7. Hz Half-cycle sinewave, Conduction angle, Continuous current Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj= Peak forward gate current IFGM. Peak forward gate voltage FGM f Hz, duty % Peak reverse gate voltage Peak gate power loss verage gate power loss Junction temperature Storage temperature RGM PGM PG() Tj Tstg... to + to + f f Hz Hz, duty % Electrical Characteristics Off-state current Reverse current On-state voltage Gate non-trigger voltage Holding current Critical rate-of-rise of off-state voltage IDRM IRRM TM GT IGT GD IH dv/dt min. typ.7.. max.... m µ m µ m m /µs Tj=, D=, RGK=kΩ Tj=, D=, RGK=kΩ Tj=, D=, RGK=kΩ Tj=, D=, RGK=kΩ TC=, ITM= D=, RL=Ω, TC= D=/ DRM, Tj=, RGK=kΩ RGK=kΩ, Tj= D=/ DRM, Tj=, RGK=kΩ, CGK=.33µF Total power dissipation PT 3 ithout Heatsink, Tj=, ll elements operation ith infinite Heatsink, Tj=, ll elements operation

25 SL 3

26 TO-S Thyristor with built-in reverse diode for HID lamp ignition TFCD Features Repetitive peak off-state voltage: DRM= Repetitive peak surge on-state current: ITRM=3 Critical rate-of-rise of on-state current: di/dt= /µs : IGT=m max ith built-in reverse diode External Dimensions (: mm). ±.3 (.). ±.3. ±..3 ±.. ±..7 ±..9 ± ± ±.. ±.. ±..±.. ±. () () (3) (). Cathode(K) (). node () (3). Gate (G) eight: pprox..g bsolute Maximum Repetitive peak off-state voltage DRM Tj= to +, RGK=kΩ Repetitive surge peak on-state current Critical rate-of-rise of on-state current ITRM di/dt 3 /µs D 3, kcycle, p=.3µs, Ta= Peak forward gate current Peak gate power loss verage gate power loss Peak reverse gate voltage IFGM PGM PG() RGM... f f f Hz, duty Hz, duty Hz % % Diode repetitive peak surge forward current Junction temperature Storage temperature IFRM Tj Tstg to + to + D 3, kcycle, p=.3µs, Ta= The surge current for T=ms /cycle shall be applied cycles successively, and an interval time shall follow to cool down the junction temperature of the device to. This process shall be repeated up to K cycles. Measurement circuit L Current waveform (cycle) (Ta=) D G C Sample /div G µs/div Electrical Characteristics min On-state voltage TM GT IGT Gate non-trigger voltage GD. Holding current IH Off-state current () IDRM () Off-state current () IDRM () Thermal resistance Rth Diode forward voltage F typ. max.... m m µ m / IT= D=, RL=Ω D=, RL=Ω D=, Tj= RG K=kΩ, Tj= D=DRM, RG K=kΩ, Tj= D=DRM, RG K=kΩ, Tj= Junction to case IF= (Tj=)

27 TFCD

28 TO-F 3 Thyristor with built-in valanche diode TFD3S series Features ith built-in valanche diode verage on-state current: IT()=3 : IGT=m max Isolation voltage: ISO=(Hz C, RMS, min.) External Dimensions (: mm).9 ±.3 3.min. ±. 3.9 ±.. ±.. ±.. ±.. ±. φ3.3 ±.. C. a b.3 ±..3 ± K G bsolute Maximum Repetitive peak off-state voltage DRM Tj= to +, RGK=kΩ verage on-state current RMS on-state current IT() IT (RMS) 3..7 Hz Half-cycle sinewave,, Continuous current, Tc=9 Surge on-state current Hz Half-cycle sinewave, Peak value, Non-repetitive, Tj= Squared rated current and time product I t sec ms t ms Peak forward gate voltage FGM. f Hz, duty % Peak reverse gate voltage RGM. f Hz Peak gate power loss PGM. f Hz, duty % verage gate power loss PG (). Junction temperature Tj to + Storage temperature Tstg to + Isolation voltage Hz Sine wave, RMS, Terminal to case, min. ISO ±. () () (3). ±. (). Cathode(K) (). node () (3). Gate (G) a. Part Number b. Lot Number eight: pprox..g DRM Rank -C -F 3 -G -J -K -L -M -N 7 -O 9 Electrical Characteristics min typ max. Off-state current IDRM Breakover voltage BO Breakover current IBO. On-state voltage TM. GT. IGT. Gate non-trigger voltage GT. Holding current IH Critical rate-of-rise of off-state voltage dv/dt Thermal resistance Rth. m µ m m m /µs / (Tj=, unless otherwise specified) Tj=, D=DRM, RGK=kΩ Tj=, D=DRM, RGK=kΩ ITM= D=, RL=Ω D=DRM, Tj=, RGK=kΩ RGK=kΩ, Tj= D=DRM, Tj=, RGK=kΩ, CGK=.33µF Junction to case BO Rank min typ max -C F -G 7 -J 9 -K 3 -L -M N -O pplication example Input Reg. Overvoltage detection TFD3S Load Overcurrent detection

29 TFD3S series vt it Characteristics (max) On-state current it (). Tj= Tj= On-state voltage vt () Surge on-state current () Initial junction temperature Tj= ms cycle Number of cycle Gate Characteristics Gate voltage vgf () GT () See graph at the upper right IGT (m) 3 Gate current igf () Tj= Tj= Tj= IT() PT() Characteristics verage on-state power PT() () 7 3 Half wave, single phase θ : Conduction angle θ θ=3 9 DC IT() Tc Case temperature TC () 7 θ=3 9 Half wave, single phase θ : Conduction angle θ DC 3 verage on-state current IT() () 3 verage on-state current IT() () Pulse trigger temperature Characteristics vgt ( ) voltage at vgt GT ( ) at Ta and... vgt Tj = 7 Pulse trigger temperature Characteristics igt ( ) current at igt IGT ( ) at Ta and 3. Tj = igt 7 IH temperature Characteristics Holding current IH (m) (RGK=kΩ) 7 Junction temperature Tj () GT temperature Characteristics. GT () (D=, RL=Ω) Junction temperature Tj () IGT temperature Characteristics IGT (m) (D=, RL=Ω) 7 Junction temperature Tj () Transient thermal resistance Characteristics (Junction to case) Transient thermal resistance rth (/).. 3 t, Time (ms) 7

30 TO- 3 Triac TM3M-L, TM3M-L Features Repetitive peak off-state voltage: DRM=, RMS on-state current: IT(RMS)=3 Gate trigger Current: IGT=m max (MODE,, ) External Dimensions (: mm).max.7max. ±. 3. ±. a b φ3.7 ±..max.max. min.max.3 ± ±.. ±..7 ±. () () (3) (). Terminal (T) (). Terminal (T) (3). Gate (G) a. Part Number b. Lot Number eight: pprox..g bsolute Maximum TM3M-L TM3M-L Repetitive peak off-state voltage DRM RMS on-state current IT(RMS) 3. Surge on-state current 3 Peak gate voltage GM Peak gate current IGM. Peak gate power loss PGM 3 verage gate power loss PG().3 Junction temperature Tj to + Storage temperature Tstg to + Conduction angle 3, Tc= Hz full-cycle sinewave, Peak value, Non-repetitive, Tj= Electrical Characteristics min Off-state current IDRM On-state voltage TM GT IGT Gate non-trigger voltage GD. Holding current IH Thermal resistance Rth typ max m m / (Tj=, unless otherwise specified).3. D=DRM, RGK=, Tj= m. D=DRM, RGK=, Tj= Pulse test, ITM= D=, RL=Ω, TC= D=, RL=Ω, TC= D=/ DRM, Tj= D= Junction to case

31 TM3M-L, TM3M-L vt it Characteristics (max) Gate Characteristics On-state current it () Tj= Tj= Surge on-state current () 3 Initial junction temperature Tj= ms cycle Hz Gate voltage vgf () GT () See graph at the upper right Tj= Tj= Tj= IGT (m) On-state voltage vt () IT(RMS) PT() Characteristics verage on-state power PT() () 3 Conduction angle θ=θ+θ=3 θ θ 3 RMS on-state current IT(RMS) () IT(RMS) Tc Case temperature TC () 7 Conduction angle θ=θ+θ=3 θ θ 3 RMS on-state current IT(RMS) () Number of cycle IT(RMS) Ta mbient temperature Ta () 7 Conduction angle : 3 Self-supporting Natural cooling No wind RMS on-state current IT(RMS) () Holding current IH (m)... Gate current igf () IH temperature Characteristics (T T + ) (T T ) (D=3, IP=3., RGK= ) 7 Junction temperature Tj () Pulse trigger temperature Characteristics vgt ( voltage at ) vgt GT ( at Tj and ) 3 (MODE ) (MODE ) (MODE ) 3 3 Tj= 7 vgt.. 3 % ( voltage at ) vgt GT ( at Tj and ) Tj= vgt % ( ) voltage at vgt GT ( ) at Tj and.. 3 Tj= 7 vgt % Pulse trigger temperature Characteristics igt ( current at ) igt IGT ( at Tj and ) 3 (MODE ) (MODE ) (MODE ) 3 3 igt igt % % Tj= Tj= Tj= ( current at ) igt IGT ( at Tj and ).. 3 ( ) current at igt IGT ( ) at Tj and.. 3 igt % GT temperature characteristics. GT ()..... MODE (T,G ) MODE (T +,G + ) MODE (T +,G ) (D=, RL=Ω) 7 Junction temperature Tj () IGT temperature characteristics IGT (m) MODE (T,G ) MODE (T +,G ) MODE (T +,G + ) (D=, RL=Ω) 7 Junction temperature Tj () Transient thermal resistance Characteristics Transient thermal resistance rth (/) junction to operating environment.. 3 t, Time (ms) Junction to case 9

32 TO-F 3 Triac TM3S-L, TM3S-L Features Repetitive peak off-state voltage: DRM=, Rms on-state current: IT(RMS)=3 : IGT=m max (MODE,, ) Isolation voltage: ISO=(Hz Sine wave, RMS) UL approved type available External Dimensions (: mm).9 ±.3 3.min φ3.3 ±.. ±. 3.9 ±.. ±.. ±. a b. ±.. ±..3 ±..3 ± C ±. () () (3) (). Terminal (T) (). Terminal (T) (3). Gate (G). ±. a. Part Number b. Lot Number eight: pprox..g bsolute Maximum TM3S-L TM3S-L Repetitive peak off-state voltage DRM RMS on-state current IT(RMS) 3. Surge on-state current 3 Peak gate voltage GM Peak gate current IGM. Peak gate power loss PGM 3 verage gate power loss PG().3 Junction temperature Tj to + Storage temperature Tstg to + Isolation voltage ISO rms Conduction angle 3, Tc=9 Hz full-cycle sinewave, Peak value, Non-repetitive, Tj= Hz Sine wave, RMS, Terminal to Case, min. Electrical Characteristics min Off-state current IDRM On-state voltage TM GT IGT Gate non-trigger voltage GD. Holding current IH Thermal resistance Rth typ max m / (Tj=, unless otherwise specified).3. D=DRM, RGK=, Tj= m. D=DRM, RGK=, Tj=. Pulse test, ITM= D=, RL=Ω, TC=. m D=, RL=Ω, TC=. D=/ DRM, Tj= D= Junction to case 3

33 TM3S-L, TM3S-L vt it Characteristics (max) On-state current it () Tj= Tj=. Surge on-state current () 3 Hz Initial junction temperature Tj= ms cycle Gate Characteristics Gate voltage vgf () GT () See graph at the upper right Tj= Tj= Tj= IGT (m) On-state voltage vt () IT(RMS) PT() Characteristics verage on-state power PT() () Conduction angle θ=θ+θ=3 θ θ 7 Number of cycle IT(RMS) Tc IT(RMS) Ta Case temperature TC () Conduction angle : 3 mbient temperature Ta () 7 Conduction angle : 3 Self-supporting Natural cooling No wind... Gate current igf () IH temperature Characteristics Holding current IH (m) (T T + ) (T T ) (D=3, IP=3., RGK= ) 3 RMS on-state current IT(RMS) () 3 RMS on-state current IT(RMS) () RMS on-state current IT(RMS) () 7 Junction temperature Tj () Pulse trigger temperature Characteristics vgt ( voltage at ) vgt GT ( at Ta and ) 3 (MODE ) (MODE ) (MODE ) 3 3 vgt vgt % % Tj= Tj= Tj= ( voltage at ) vgt GT ( at Ta and ).. 3 ( ) voltage at vgt GT ( ) at Ta and.. 3 vgt % Pulse trigger temperature Characteristics igt ( current at ) igt IGT ( at Ta and ) 3 (MODE ) (MODE ) (MODE ) 3 3 igt igt % % Tj= Tj= Tj= ( current at ) igt IGT ( at Ta and ) ( ) current at igt IGT ( ) at Ta and igt % GT temperature characteristics. GT ()..... MODE (T,G ) MODE (T +,G + ) MODE (T +,G ) (D=, RL=Ω) 7 Junction temperature Tj () IGT temperature characteristics IGT (m) MODE (T,G ) MODE (T +,G ) MODE (T +,G + ) (D=, RL=Ω) 7 Junction temperature Tj () Transient thermal resistance Characteristics Transient thermal resistance rth (/) Junction to operating environment.. 3 t, Time (ms) Junction to case 3

34 TO- Triac TMM-L, TMM-L Features Repetitive peak off-state voltage: DRM=, RMS on-state current: IT(RMS)= Gate trigger Current: IGT=m max (MODE,, ) External Dimensions (: mm).max.7max. ±. 3. ±. a b φ3.7 ±..max.max. min.max.3 ± ±.. ±..7 ±. () () (3) (). Terminal (T) (). Terminal (T) (3). Gate (G) a. Part Number b. Lot Number eight: pprox..g bsolute Maximum TMM-L TMM-L Repetitive peak off-state voltage DRM RMS on-state current IT(RMS). Surge on-state current Peak gate voltage GM Peak gate current IGM Peak gate power loss PGM verage gate power loss PG(). Junction temperature Tj to + Storage temperature Tstg to + Conduction angle 3, Tc= Hz full-cycle sinewave, Peak value, Non-repetitive, Tj= Electrical Characteristics min Off-state current IDRM On-state voltage TM GT IGT Gate non-trigger voltage GD. Holding current IH Thermal resistance Rth typ max m /.3. D=DRM, RGK=, Tj= m. D=DRM, RGK=, Tj=. Pulse test, ITM= D=, RL=Ω, TC=... 7 m D=, RL=Ω, TC=.7 D=/ DRM, Tj= D= (Tj=, unless otherwise specified) Junction to case 3

35 TMM-L, TMM-L vt it Characteristics (max) Gate Characteristics On-state current it () Tj= Tj= Surge on-state current () Initial junction temperature Tj= ms cycle Hz Gate voltage vgf () P = f Hz duty % GM See graph at the upper right GT () 3 Tj= Tj= Tj= IGT (m) On-state voltage vt () IT(RMS) PT() Characteristics verage on-state power PT() () 7 3 Conduction angle :3 3 RMS on-state current IT(RMS) () IT(RMS) Tc Case temperature TC () 7 Conduction angle :3 3 RMS on-state current IT(RMS) () Number of cycle IT(RMS) Ta mbient temperature Ta () 7 Conduction angle : 3 Self-supporting Natural cooling No wind RMS on-state current IT(RMS) () Holding current IH (m) 3 Gate current igf () IH temperature Characteristics (T T ) (D=3, RGK= ) (T T + ) 7 Junction temperature Tj () Pulse trigger temperature Characteristics vgt ( voltage at ) vgt GT ( at Tj and )... (MODE ) (MODE ) (MODE ).. vgt Tj= ( voltage at ) vgt GT ( at Tj and ).. vgt Tj= 7 ( ) voltage at vgt GT ( ) at Tj and.. vgt Tj= Pulse trigger temperature Characteristics igt ( current at ) igt IGT ( at Tj and ) 3. (MODE ) (MODE ) (MODE ) 3 3 igt igt Tj= Tj= Tj= ( current at ) igt IGT ( at Tj and ) ( ) current at igt IGT ( ) at Tj and. igt 7 GT temperature characteristics. GT ()..... MODE (T,G ) MODE (T +,G + ) MODE (T +,G ) (D=, RL=Ω) 7 Junction temperature Tj () IGT temperature characteristics IGT (m) MODE (T, G ) MODE (T +, G ) MODE (T +, G + ) (D=, RL=Ω) 7 Junction temperature Tj () Transient thermal resistance Characteristics (Junction to case).. 3 t, Time (ms) Transient thermal resistance rth (/) 33

36 TO-F Triac TMS-L, TMS-L Features Repetitive peak off-state voltage: DRM=, RMS on-state current: IT(RMS)= : IGT=m max (MODE,, ) Isolation voltage: ISO=(Hz Sine wave, RMS) UL approved type available External Dimensions (: mm).9 ±.3 3.min φ3.3 ±.. ±. 3.9 ±.. ±.. ±. a b. ±.. ±..3 ±..3 ± C ±. () () (3) (). Terminal (T) (). Terminal (T) (3). Gate (G). ±. a. Part Number b. Lot Number eight: pprox..g bsolute Maximum TMS-L TMS-L Repetitive peak off-state voltage DRM RMS on-state current IT(RMS). Surge on-state current Peak gate voltage GM Peak gate current IGM Peak gate power loss PGM verage gate power loss PG(). Junction temperature Tj to + Storage temperature Tstg to + Isolation voltage ISO rms Conduction angle 3, Tc= Hz full-cycle sinewave, Peak value, Non-repetitive, Tj= Hz Sine wave, RMS, Terminal to Case, min. Electrical Characteristics min Off-state current IDRM On-state voltage TM GT IGT Gate non-trigger voltage GD. Holding current IH Thermal resistance Rth typ max m /.3. D=DRM, RGK=, Tj= m. D=DRM, RGK=, Tj=. Pulse test, ITM= D=, RL=Ω, TC=... 7 m D=, RL=Ω, TC=. D=/ DRM, Tj= D= (Tj=, unless otherwise specified) Junction to case 3

37 TMS-L, TMS-L vt it Characteristics (max) On-state current it ()... Tj= Tj= On-state voltage vt () IT(RMS) PT() Characteristics verage on-state power PT() () 7 Conduction angle : RMS on-state current IT(RMS) () IT(RMS) Tc Case temperature TC () 7 Conduction angle : 3 3 RMS on-state current IT(RMS) () IT(RMS) Ta mbient temperature Ta () Conduction angle : 3 Self-supporting Natural cooling No wind GT temperature characteristics. GT ()..... MODE MODE MODE (D=, RL=Ω) IGT temperature characteristics IGT (m) MODE MODE MODE (D=, RL=Ω) RMS on-state current IT(RMS) () 7 Junction temperature Tj () 7 Junction temperature Tj () Transient thermal resistance Characteristics Transient thermal resistance rth (/) Junction to operating environment.. 3 t, Time (ms) Junction to case 3

38 TO- Triac TMM-L, TMM-L Features Repetitive peak off-state voltage: DRM=, RMS on-state current: IT(RMS)= Gate trigger Current: IGT=3m max (MODE,, ) External Dimensions (: mm).max.7max. ±. 3. ±. a b φ3.7 ±..max.max. min.max.3 ± ±.. ±..7 ±. () () (3) (). Terminal (T) (). Terminal (T) (3). Gate (G) a. Part Number b. Lot Number eight: pprox..g bsolute Maximum TMM-L TMM-L Repetitive peak off-state voltage DRM RMS on-state current IT(RMS). Surge on-state current Peak gate voltage GM Peak gate current IGM Peak gate power loss PGM verage gate power loss PG(). Junction temperature Tj to + Storage temperature Tstg to + Conduction angle 3, Tc= Hz full-cycle sinewave, Peak value, Non-repetitive, Tj= Electrical Characteristics Off-state current IDRM On-state voltage TM GT IGT Gate non-trigger voltage GD Holding current IH Thermal resistance Rth min. typ max m m /.3. D=DRM, RGK=, Tj= m. D=DRM, RGK=, Tj= Pulse test, ITM= D=, RL=Ω, TC= D=, RL=Ω, TC= D=/ DRM, Tj= D= Junction to case (Tj=, unless otherwise specified) 3

39 TMM-L, TMM-L vt it Characteristics (max) On-state current it () On-state voltage vt () Tj= Tj= IT(RMS) PT() Characteristics verage on-state power PT() () Conduction angle :3 RMS on-state current IT(RMS) () IT(RMS) Tc Case temperature TC () 7 Conduction angle :3 Surge on-state current () RMS on-state current IT(RMS) () Initial junction temperature Tj= ms cycle Hz Number of cycle 7 IT(RMS) Ta mbient temperature Ta () Conduction angle : 3 Self-supporting Natural cooling No wind RMS on-state current IT(RMS) () Gate Characteristics Gate voltage vgf () P = GM 3 Gate current igf () See graph at the upper right 3 IGT (m) 7 Junction temperature Tj () GT () Tj= Tj= Tj= IH temperature Characteristics Holding current IH (m) (T T ) (T T + ) (D=3) Pulse trigger temperature Characteristics vgt ( voltage at ) vgt GT ( at Tj and ) 3 (MODE ) (MODE ) (MODE ) 3 3 vgt vgt % % Tj= Tj= Tj= ( voltage at ) vgt GT ( at Tj and ) ( ) voltage at vgt GT ( ) at Tj and vgt % Pulse trigger temperature Characteristics igt ( current at ) igt IGT ( at Tj and ) 3 (MODE ) (MODE ) (MODE ) 3 3 igt igt % % Tj= Tj= Tj= ( current at ) igt IGT ( at Tj and ) ( ) current at igt IGT ( ) at Tj and igt % GT temperature characteristics. GT ()..... MODE (T,G ) MODE (T +,G + ) MODE (T +,G ) (D=, RL=Ω) 7 Junction temperature Tj () IGT temperature characteristics IGT (m) (D=, RL=Ω) MODE (T, G ) MODE (T +, G ) MODE (T +, G + ) 7 Junction temperature Tj () Transient thermal resistance Characteristics Transient thermal resistance rth (/) Junction to operating environment.. 3 t, Time (ms) Junction to case 37

40 TO-F Triac TMS-L, TMS-L Features Repetitive peak off-state voltage: DRM=, RMS on-state current: IT(RMS)= : IGT=3m max (MODE,, ) Isolation voltage: ISO=(Hz Sine wave, RMS) UL approved type available External Dimensions (: mm).9 ±.3 3.min φ3.3 ±.. ±. 3.9 ±.. ±.. ±. a b. ±.. ±..3 ±..3 ± C ±. () () (3) (). Terminal (T) (). Terminal (T) (3). Gate (G). ±. a. Part Number b. Lot Number eight: pprox..g bsolute Maximum TMS-L TMS-L Repetitive peak off-state voltage DRM RMS on-state current IT(RMS). Surge on-state current Peak gate voltage GM Peak gate current IGM Peak gate power loss PGM verage gate power loss PG(). Junction temperature Tj to + Storage temperature Tstg to + Isolation voltage ISO rms Conduction angle 3, Tc=9 Hz full-cycle sinewave, Peak value, Non-repetitive, Tj= Hz Sine wave, RMS, Terminal to Case, min. Electrical Characteristics min Off-state current IDRM On-state voltage TM GT IGT Gate non-trigger voltage GD. Holding current IH Thermal resistance Rth typ max m m /.3. D=DRM, RGK=, Tj= m. D=DRM, RGK=, Tj= Pulse test, ITM= D=, RL=Ω, TC= D=, RL=Ω, TC= D=/ DRM, Tj= D= (Tj=, unless otherwise specified) Junction to case 3