SAMPLE REPACKAGING FOR BACKSIDE ANALYSIS
|
|
- Mervyn Spencer
- 5 years ago
- Views:
Transcription
1 SAMPLE REPACKAGING FOR BACKSIDE ANALYSIS CHAUDAT Willy, CNES /UPS CHAZAL Vanessa, Thales-CNES LAUVERJAT Dorine, Hirex Engineering FORGERIT Bertrand, Hirex Engineering 1
2 OUTLINE Context Process description Process control Conclusion & perspectives 2
3 CONTEXT One key for the success of Backside defect localization is the quality of the sample preparation. The sample to sample reproducibility requires a minimum optionality of the preparation process. The key parameters to be under control are : - Backside flatness - Warp control - Low stress, low damage - Perfect polished surface - Electrical integrity - Perfect polished surface of the initial ball and wedges to be re-bonded The CNES DCT/AQ/LE lab initiates a project for die repackaging using a new concept based on a universal PCB package adapted to their electrical bench interface. Hirex Engineering technology analysis laboratory historically provides many services around FA, DPA, CA and std/custom sample preparation for radiation test. Repackaging activity for backside analysis is now a new item in our business portfolio and roadmap. 3
4 PROCESS DESCRIPTION 1-Die extraction Ceramic package Side brazed package Dice in cavity Plastic package Molded dice New package (3D,TVS,SoC ) Die extraction to be adpated 4
5 1-Die extraction Die in cavity PROCESS DESCRIPTION a- Open the package b- Fill the cavity with epoxy resin c- Cut the Die/Resin/Package cube d- Front side & backside polishing e- Extract chemically the die 5
6 1-Die extraction Molded Die PROCESS DESCRIPTION a- Front side polishing b- Backside polishing c- Cut the package cube 6
7 PROCESS DESCRIPTION 2- Tool kit Metal bloc substrate Repackaging PCB Conductive Silicon Metal screen plate - Cavity for molding Plate Ni Au shorts all pins during - Good thermal diffusion the porcess for the bonding process - Compatible with the wire bonder table 7
8 PROCESS DESCRIPTION 3-Bonding diagram scrambling Pin options : I/O : Connected to tester VCC : Power supply 1 GND : Ground VDD : Power supply 2 NC : Not connected to tester Jumper identification : 8
9 PROCESS DESCRIPTION 4-Die repackaging Molded die a-bond the chip/plastic on the substrate b-position the PCB c-position the conductive silicone plate d-position the screen e-perform the wire bonding operation f-fill the cavity with epoxy resin/low stress plastic g-extract the mounted sample for final polishing PCB Die 9
10 PROCESS CONTROL 5-Key parameters Die extraction Die surface protection Flatness control during process Top/bottom surface referential monitoring Repackaging and rebonding Top/bottom surface referential monitoring Good Mechanical stability Good Thermal transfer Good ultrasonic transfer Residual bonding cleanness ESD protection Stay in the Bonder tool capabilities Die to PCB level step Wire length / loop limitation Bonding termination option choice BBS/BBOS/BSOB for multichip project. 10
11 Conclusion CONCLUSION & PERSPECTIVES Today, we are able to perform repackaging/rebonding operation with good results and stable process. What s next? Design a specific holder for our polishing tool. Integrate SMD parts on the Repackage PCB. Molding resin improvement for large and thin dice. Development of die extraction process on new assembly. Development of assembly process with Copper material. Upgrade the wire bonder tool in order to fit with aggressive pitch trend (<50µm ball bond diameter). 11
12 THANK YOU 12
Chapter 11 Testing, Assembly, and Packaging
Chapter 11 Testing, Assembly, and Packaging Professor Paul K. Chu Testing The finished wafer is put on a holder and aligned for testing under a microscope Each chip on the wafer is inspected by a multiple-point
More informationIntroduction to Wire-Bonding
Introduction to Wire-Bonding Wire bonding is a kind of friction welding Material are connected via friction welding Advantage: Different materials can be connected to each other widely used, e.g. in automobile
More informationB. Flip-Chip Technology
B. Flip-Chip Technology B1. Level 1. Introduction to Flip-Chip techniques B1.1 Why flip-chip? In the development of packaging of electronics the aim is to lower cost, increase the packaging density, improve
More informationGeneral Rules for Bonding and Packaging
General Rules for Bonding and Packaging at the Else Kooi Laboratory 3 CONTENT Rules for assembly at EKL 4 Introduction to assembly 5 Rules for Saw Lane 7 Rules for Chip Size 8 Rules for Bondpads 9 Rules
More informationCHAPTER 11: Testing, Assembly, and Packaging
Chapter 11 1 CHAPTER 11: Testing, Assembly, and Packaging The previous chapters focus on the fabrication of devices in silicon or the frontend technology. Hundreds of chips can be built on a single wafer,
More informationTwo major features of this text
Two major features of this text Since explanatory materials are systematically made based on subject examination questions, preparation
More informationHigh Isolation SPDT SWITCH
High Isolation SPDT SWITCH GENERAL DESCRIPTION The NJG1697EM1 is a 1bit control GaAs high isolation SPDT switch MMIC. The NJG1697EM1 features very high isolation and low control voltage. It has integrated
More informationEFFECTS OF USG CURRENT AND BONDING LOAD ON BONDING FORMATION IN QFN STACKED DIE PACKAGE. A. Jalar, S.A. Radzi and M.A.A. Hamid
Solid State Science and Technology, Vol. 16, No 2 (2008) 65-71 EFFECTS OF USG CURRENT AND BONDING LOAD ON BONDING FORMATION IN QFN STACKED DIE PACKAGE A. Jalar, S.A. Radzi and M.A.A. Hamid School of Applied
More informationBenzocyclobutene Polymer dielectric from Dow Chemical used for wafer-level redistribution.
Glossary of Advanced Packaging: ACA Bare Die BCB BGA BLT BT C4 CBGA CCC CCGA CDIP or CerDIP CLCC COB COF CPGA Anisotropic Conductive Adhesive Adhesive with conducting filler particles where the electrical
More information3D PLUS technology and offer
3D PLUS technology and offer By Dr Pascal Couderc, 3D PLUS 408, Rue Hélène Boucher 78532 BUC France Phone: + 33 1 30 83 26 50 Email : www.3d-plus.com TM P.COUDERC 3D PLUS technology and offer 1 Outline
More informationMA4L Series. Silicon PIN Limiters RoHS Compliant. M/A-COM Products Rev. V12. Features. Chip Outline. Description. Applications
Features Low Insertion Loss and Noise Figure High Peak and Average Operating Power Various P1dB Compression Powers Low Flat Leakage Power Proven Reliable, Silicon Nitride Passivation Chip Outline A Square
More informationFeatures. = +25 C, 50 Ohm System
Typical Applications Features This is ideal for: Low Insertion Loss:.5 db Point-to-Point Radios Point-to-Multi-Point Radios Military Radios, Radar & ECM Test Equipment & Sensors Space Functional Diagram
More informationWedge Bonder --- West Bond E
Wedge Bonder --- West Bond 747677E Figure 1: West Bond Wedge Bonder Introduction The West Bond 747677E bonder is an ultrasonic wedge-wedge wire bonder designed to interconnect wire leads to various types
More informationHMC241AQS16 / 241AQS16E
v00.1213 Typical Applications Features The HMC241AQS16 & HMC241AQS16E are ideal for: Base Stations & Portable Wireless CATV / DBS Wireless Local Loop Test Equipment Functional Diagram RoHS Compliant Product
More informationFeatures. Gain: 12 db. 50 Ohm I/O s
v.19 Typical Applications An excellent cascadable Ohm Block or LO Driver for: Microwave & VSAT Radios Test Equipment Military EW, ECM, C 3 I Space Telecom Functional Diagram Features : 1 P1 Output Power:
More information77 GHz VCO for Car Radar Systems T625_VCO2_W Preliminary Data Sheet
77 GHz VCO for Car Radar Systems Preliminary Data Sheet Operating Frequency: 76-77 GHz Tuning Range > 1 GHz Output matched to 50 Ω Application in Car Radar Systems ESD: Electrostatic discharge sensitive
More informationHMC397 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP. InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz. Features. Typical Applications. General Description
v3.19 MMIC AMPLIFIER, DC - 1 GHz Typical Applications An excellent cascadable Ohm Block or LO Driver for: Microwave & VSAT Radios Test Equipment Military EW, ECM, C 3 I Space Telecom Functional Diagram
More informationFeatures. Output Third Order Intercept (IP3) [2] dbm Power Added Efficiency %
v5.1217 HMC187 2-2 GHz Typical Applications The HMC187 is ideal for: Test Instrumentation General Communications Radar Functional Diagram Features High Psat: +39 dbm Power Gain at Psat: +5.5 db High Output
More informationEE 330 Lecture 11. Capacitances in Interconnects Back-end Processing
EE 330 Lecture 11 Capacitances in Interconnects Back-end Processing Exam 1 Friday Sept 21 Students may bring 1 page of notes HW assignment for week of Sept 16 due on Wed Sept 19 at beginning of class No
More informationAn Introduction to Electronics Systems Packaging. Prof. G. V. Mahesh. Department of Electronic Systems Engineering
An Introduction to Electronics Systems Packaging Prof. G. V. Mahesh Department of Electronic Systems Engineering India Institute of Science, Bangalore Module No. # 02 Lecture No. # 08 Wafer Packaging Packaging
More informationFeatures. Parameter Min. Typ. Max. Units. Frequency Range 8 12 GHz Insertion Loss* 5 7 db. Input Return Loss* 10 db
v2.29 HMC4 Typical Applications The HMC4 is ideal for: EW Receivers Weather & Military Radar Satellite Communications Beamforming Modules Features Low RMS Phase Error: Low Insertion Loss: 6. db Excellent
More informationSpecifications subject to change Packaging
VCSEL Standard Product Packaging Options All standard products are represented in the table below. The Part Number for a standard product is determined by replacing the x in the column Generic Part Number
More informationAbstract. Key words: Interconnections, wire bonding, Ball Grid Arrays, metallization
Integrated Solutions to Bonding BGA Packages: Capillary, Wire, and Machine Considerations by Leroy Christie, Director Front Line Process Engineering AMKOR Electronics 1900 South Price Road, Chandler, Az
More informationInterconnection Challenge in Wire Bonding Ag alloy wire. Jensen Tsai / 蔡瀛洲, SPIL, Taiwan
1 Interconnection Challenge in Wire Bonding Ag alloy wire Jensen Tsai / 蔡瀛洲, SPIL, Taiwan 2 Content Ag Alloy Wire Type Market Ag Alloy Wire Benefits Workability and Reliability Performance IMC behavior
More informationENGAT00000 to ENGAT00010
Wideband Fixed Attenuator Family, DIE, DC to 50 GHz ENGAT00000 / 00001 / 00002 / 00003 / 00004 / 00005 / 00006 / 00007 / 00008 / 00009 / 00010 Typical Applications ENGAT00000 to ENGAT00010 Features Space
More informationMAAP Power Amplifier, 15 W GHz Rev. V1. Features. Functional Schematic. Description. Pin Configuration 2. Ordering Information
Features 15 W Power Amplifier 42 dbm Saturated Pulsed Output Power 17 db Large Signal Gain P SAT >40% Power Added Efficiency Dual Sided Bias Architecture On Chip Bias Circuit 100% On-Wafer DC, RF and Output
More informationUMS User guide for bare dies GaAs MMIC. storage, pick & place, die attach and wire bonding
UMS User guide for bare dies GaAs MMIC storage, pick & place, die attach and wire bonding Ref. : AN00014097-07 Apr 14 1/10 Specifications subject to change without notice United Monolithic Semiconductors
More informationسمینار درس تئوری و تکنولوژی ساخت
نام خدا به 1 سمینار درس تئوری و تکنولوژی ساخت Wire Bonding استاد : جناب آقای محمدنژاد دکتر اردیبهشت 93 2 3 Content IC interconnection technologies Whats wirebonding Wire Bonding Processes Thermosonic Wirebond
More informationFEATURES DESCRIPTION ABSOLUTE MAXIMUM RATINGS. T AMB = +25 C ( Unless otherwise specified )
Monolithic PIN SP5T Diode Switch FEATURES Ultra Broad Bandwidth: 50MHz to 26GHz 1.0 db Insertion Loss 30 db Isolation at 20GHz Reliable. Fully Monolithic Glass Encapsulated Construction DESCRIPTION The
More informationOBSOLETE HMC915LP4E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram. General Description
v1.5 LO AMPLIFIER,.5-2.7 GHz Typical Applications The is ideal for: PCS / 3G Infrastructure Base Stations & Repeaters WiMAX & WiBro ISM & Fixed Wireless Functional Diagram Features Input IP3: +28 dbm Low
More informationSOLDER BUMP FLIP CHIP BONDING FOR PIXEL DETECTOR HYBRIDIZATION
SOLDER BUMP FLIP CHIP BONDING FOR PIXEL DETECTOR HYBRIDIZATION Jorma Salmi and Jaakko Salonen VTT Information Technology Microelectronics P.O. Box 1208 FIN-02044 VTT, Finland (visiting: Micronova, Tietotie
More informationFraunhofer IZM - ASSID
FRAUNHOFER-INSTITUT FÜR Zuverlässigkeit und Mikrointegration IZM Fraunhofer IZM - ASSID All Silicon System Integration Dresden Heterogeneous 3D Wafer Level System Integration 3D system integration is one
More informationFeatures. Parameter Min. Typ. Max. Units. Frequency Range 3 6 GHz Insertion Loss* db. Input Return Loss* 12 db
Typical Applications The is ideal for: EW Receivers Weather & Military Radar Satellite Communications Beamforming Modules Phase Cancellation Functional Diagram Features Low RMS Phase Error: Low Insertion
More informationBGA/CSP Re-balling Bob Doetzer Circuit Technology Inc.
BGA/CSP Re-balling Bob Doetzer Circuit Technology Inc. www.circuittechnology.com The trend in the electronics interconnect industry towards Area Array Packages type packages (BGA s, CSP s, CGA s etc.)
More informationProcesses for Flexible Electronic Systems
Processes for Flexible Electronic Systems Michael Feil Fraunhofer Institut feil@izm-m.fraunhofer.de Outline Introduction Single sheet versus reel-to-reel (R2R) Substrate materials R2R printing processes
More informationNew Power MOSFET. 1. Introduction. 2. Application of Power MOSFETs. Naoto Fujisawa Toshihiro Arai Tadanori Yamada
New Power MOSFET Naoto Fujisawa Toshihiro Arai Tadanori Yamada 1. Introduction Due to the finer patterns and higher integration of LSIs, functions that were used a few years ago in minicomputers have now
More informationBrief Introduction of Sigurd IC package Assembly
Brief Introduction of Sigurd IC package Assembly Content Package Development Trend Product Brief Sawing type QFN Representative MEMS Product LGA Light Sensor Proximity Sensor High Yield Capability Low
More informationWirebond challenges in QFN. Engineering Team - Wire bond section SPEL Semiconductor Limited
Introduction: Wirebond challenges in QFN by Engineering Team - Wire bond section SPEL Semiconductor Limited The market for the portable & handheld consumer electronic goods is growing rapidly and technological
More informationApplication Note Silicon Flow Sensor SFS01
Application Note Silicon Flow Sensor SFS01 AFSFS01_E2.2.0 App Note Silicon Flow Sensor 1/11 Application Note Silicon Flow Sensor SFS01 1. SFS01 - Classification in the Product Portfolio 3 2. Applications
More information23. Packaging of Electronic Equipments (2)
23. Packaging of Electronic Equipments (2) 23.1 Packaging and Interconnection Techniques Introduction Electronic packaging, which for many years was only an afterthought in the design and manufacture of
More informationFeatures. Applications. Symbol Parameters/Conditions Units Min. Max.
AMMC - 622 6-2 GHz Low Noise Amplifier Data Sheet Chip Size: 17 x 8 µm (67 x 31. mils) Chip Size Tolerance: ± 1 µm (±.4 mils) Chip Thickness: 1 ± 1 µm (4 ±.4 mils) Pad Dimensions: 1 x 1 µm (4 ±.4 mils)
More informationHMC-APH596 LINEAR & POWER AMPLIFIERS - CHIP. GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, GHz. Typical Applications. Features
Typical Applications Features This is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Functional Diagram Output IP: + dbm P1dB: +24 dbm Gain: 17 db Supply Voltage: +5V
More informationFeatures. = +25 C, 50 Ohm System. Return Loss (Input and Output) 5-18 GHz 8 db
v.89 4 ANALOG PHASE SHIFTER Typical Applications The is ideal for: Fiber Optics Military Test Equipment Features Wide Bandwidth: Phase Shift: >4 Single Positive Voltage Control Small Size: 2. x 1.6 x.1
More informationAdvances in stacked-die packaging
pg.10-15-carson-art 16/6/03 4:12 pm Page 1 The stacking of die within IC packages, primarily Chip Scale Packages (CSP) Ball Grid Arrays (BGAs) has evolved rapidly over the last few years. The now standard
More informationCompression Molding. Solutions for 3D TSV and other advanced packages as well as cost savings for standard package applications
Compression Molding Solutions for 3D TSV and other advanced packages as well as cost savings for standard package applications 1. Company Introduction 2. Package Development Trend 3. Compression FFT Molding
More informationHMC245QS16 / 245QS16E. Features OBSOLETE. Parameter Frequency Min. Typ. Max. Units. DC GHz DC GHz DC GHz
Typical Applications The HMC245QS16 / HMC245QS16E is ideal for: Basestation Infrastructure CATV / DBS Wireless Local Loop Test Equipment Functional Diagram Features Low Insertion Loss:.5 @ 2. GHz Non-Refl
More informationApplication Bulletin 240
Application Bulletin 240 Design Consideration CUSTOM CAPABILITIES Standard PC board fabrication flexibility allows for various component orientations, mounting features, and interconnect schemes. The starting
More informationSilicon PIN Limiter Diodes V 5.0
5 Features Lower Insertion Loss and Noise Figure Higher Peak and Average Operating Power Various P1dB Compression Powers Lower Flat Leakage Power Reliable Silicon Nitride Passivation Description M/A-COM
More informationFeatures. = +25 C, Vdd1, Vdd2 = +5V
v.11 HMC51 POWER AMPLIFIER, 5-2 GHz Typical Applications Features The HMC51 is ideal for use as a driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors
More informationMIL-STD-1580B REQUIREMENT 11 DETAILED REQUIREMENTS FOR CONNECTORS
DETAILED REQUIREMENTS FOR CONNECTORS 11. General. This section describes detailed requirements for a DPA of commonly used connectors. These requirements supplement the general requirements in section 4.
More informationFeatures. = +25 C, Vdd= +5V
Typical Applications This is ideal for: Wideband Communication Systems Surveillance Systems Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation * VSAT Functional Diagram
More informationBasic Functional Analysis. Sample Report Richmond Road, Suite 500, Ottawa, ON K2H 5B7 Canada Tel:
Basic Functional Analysis Sample Report 3685 Richmond Road, Suite 500, Ottawa, ON K2H 5B7 Canada Tel: 613-829-0414 www.chipworks.com Basic Functional Analysis Sample Report Some of the information in this
More informationHermetic Packaging Solutions using Borosilicate Glass Thin Films. Lithoglas Hermetic Packaging Solutions using Borosilicate Glass Thin Films
Hermetic Packaging Solutions using Borosilicate Glass Thin Films 1 Company Profile Company founded in 2006 ISO 9001:2008 qualified since 2011 Headquarters and Production in Dresden, Germany Production
More informationBall-Wedge Bonder G
PRODUCT-BROCHURE Ball-Wedge Bonder G5 62000 F & K DELVOTEC The Ball-Wedge Bonder specialist delivers the perfect solution for any bonding challenge in the automotive, opto-electronics, sensors and HF/RF
More informationBall Wedge Bonder. F & K Model G ADVANTAGES
Ball Wedge Bonder F & K Model G5 62000 F & K DELVOTEC The Ball Wedge Bonder specialist delivers the perfect solution for any bonding challenge in the automotive, optoelectronics, sensors and HF/RF technology.
More informationsize (the programmed size of the undeformed ball).
Very Fine Pitch Wire Bonding: Re-Examining Wire, Bonding Tool, and Wire Bonder Interrelationships for Optimum Process Capability Lee Levine, Principal Engineer K&S Packaging Materials 2101 Blair Mill Road,
More informationChip Assembly on MID (Molded Interconnect Device) A Path to Chip Modules with increased Functionality
T e c h n o l o g y Dr. Werner Hunziker Chip Assembly on MID (Molded Interconnect Device) A Path to Chip Modules with increased Functionality The MID (Molded Interconnect Device) technology enables the
More informationSNT Package User's Guide
(Small outline Non-leaded Thin package) [Target Packages] SNT-4A SNT-6A SNT-6A (H) SNT-8A SNT Package User s Guide Introduction This manual describes the features, dimensions, mountability, reliability,
More informationHigh Isolation SP4T SWITCH
High Isolation SP4T SWITCH NJG1699MD7 GENERAL DESCRIPTION The NJG1699MD7 is a GaAs high isolation SP4T switch MMIC. It features low insertion loss and very high isolation. It has integrated DC blocking
More information3D TSV Micro Cu Column Chip-to-Substrate/Chip Assmbly/Packaging Technology
3D TSV Micro Cu Column Chip-to-Substrate/Chip Assmbly/Packaging Technology by Seung Wook Yoon, *K. T. Kang, W. K. Choi, * H. T. Lee, Andy C. B. Yong and Pandi C. Marimuthu STATS ChipPAC LTD, 5 Yishun Street
More informationMICROELECTRONICS ASSSEMBLY TECHNOLOGIES. The QFN Platform as a Chip Packaging Foundation
West Coast Luncheon January 15, 2014. PROMEX PROMEX INDUSTRIES INC. MICROELECTRONICS ASSSEMBLY TECHNOLOGIES The QFN Platform as a Chip Packaging Foundation 3075 Oakmead Village Drive Santa Clara CA Ɩ 95051
More informationDatasheet SHT3x-ARP. Product Summary. Benefits of Sensirion s CMOSens Technology. Content
Humidity and Temperature Sensor IC Fully calibrated, linearized, and temperature compensated analog output Wide supply voltage range, from 2.4 to 5.5 10% to 90% ratiometric analog voltage output Typical
More informationFeatures. = +25 C, Vdd= +12V, Vgg2= +5V, Idd= 400 ma*
Typical Applications The HMC637LP5(E) wideband PA is ideal for: Features P1dB Output Power: +29 dbm Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional
More information450mm patterning out of darkness Backend Process Exposure Tool SOKUDO Lithography Breakfast Forum July 10, 2013 Doug Shelton Canon USA Inc.
450mm patterning out of darkness Backend Process Exposure Tool SOKUDO Lithography Breakfast Forum 2013 July 10, 2013 Doug Shelton Canon USA Inc. Introduction Half Pitch [nm] 2013 2014 2015 2016 2017 2018
More informationDicing Through Hard and Brittle Materials in the Micro Electronic Industry By Gideon Levinson, Dicing Tools Product Manager
Dicing Through Hard and Brittle Materials in the Micro Electronic Industry By Gideon Levinson, Dicing Tools Product Manager A high percentage of micro electronics dicing applications require dicing completely
More informationMicrowave Dielectrometer. Microwave Dielectrometer. Non- Destructive
Microwave Dielectrometer Microwave Dielectrometer Simple Accurate Non- Destructive innovation through smart design System configuration with oscillator (Open coaxial resonator type) A novel system enables
More informationGaAs MMIC Non-Linear Transmission Line. Description Package Green Status
GaAs MMIC Non-Linear Transmission Line NLTL-6273 1. Device Overview 1.1 General Description NLTL-6273 is a MMIC non-linear transmission line (NLTL) based comb generator. This NLTL offers excellent phase
More informationHMC465 AMPLIFIERS- DRIVERS & GAIN BLOCKS - CHIP. GaAs phemt MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz. Electrical Specifications, T A.
v9.114 DRIVER AMPLIFIER, DC - 2 GHz Typical Applications The wideband driver is ideal for: OC192 LN/MZ Modulator Driver Telecom Infrastructure Test Instrumentation Military & Space Functional Diagram Features
More informationDigital Integrated Circuits Lecture 20: Package, Power, Clock, and I/O
Digital Integrated Circuits Lecture 20: Package, Power, Clock, and I/O Chih-Wei Liu VLSI Signal Processing LAB National Chiao Tung University cwliu@twins.ee.nctu.edu.tw DIC-Lec20 cwliu@twins.ee.nctu.edu.tw
More informationFLIP CHIP LED SOLDER ASSEMBLY
As originally published in the SMTA Proceedings FLIP CHIP LED SOLDER ASSEMBLY Gyan Dutt, Srinath Himanshu, Nicholas Herrick, Amit Patel and Ranjit Pandher, Ph.D. Alpha Assembly Solutions South Plainfield,
More informationElectrical Characteristics (Ambient Temperature T = 25 o C) Units GHz db db db db db dbm dbm VDC VDC ma
Features Excellent Linear Output Amplifier Stage 21.0 Small Signal Gain +36.0 m Third Order Intercept (OIP3) +27.0 m Output P1 Compression Point 100% OnWafer RF, DC and Output Power Testing 100% Visual
More informationApplication of 3D PLUS WDoD technology for the manufacturing of electronic modules 25/02/2017 for implantable medical products
Application of 3D PLUS WDoD TM technology for the manufacturing of electronic modules for implantable medical products By Dr Pascal Couderc 1, Karima Amara², Frederic Minault 2 3D PLUS 1 408, Rue Hélène
More informationFeatures. = +25 C, Vdd= 2V [1], Idd = 55mA [2]
HMC-ALH12 Typical Applications This HMC-ALH12 is ideal for: Features Noise Figure: 2.5 db Wideband Communications Receivers Surveillance Systems Point-to-Point Radios Point-to-Multi-Point Radios Military
More informationFeatures. Specifications. Notes: Package marking provides orientation and identification 53 = Device Code X = Month of Manufacture = Pin 1
AVT-53663 DC 6000 MHz InGaP HBT Gain Block Data Sheet Description Avago Technologies AVT-53663 is an economical, easyto-use, general purpose InGaP HBT MMIC gain block amplifier utilizing Darlington pair
More informationGHz GaAs MMIC Power Amplifier
17.0.0 GHz GaAs MMIC August 07 Rev 08Aug07 Features Excellent Saturated Output Stage Competitive RF/DC Bias Pin for Pin Replacement.0 Small Signal Gain +.0 m Saturated Output Power 0% OnWafer RF, DC and
More informationLaminate Based Fan-Out Embedded Die Technologies: The Other Option
Laminate Based Fan-Out Embedded Die Technologies: The Other Option Theodore (Ted) G. Tessier, Tanja Karila*, Tuomas Waris*, Mark Dhaenens and David Clark FlipChip International, LLC 3701 E University Drive
More informationSDA-3000 GaAs Distributed Amplifier
GaAs Distributed Amplifier RFMD s SDA-3000 is a directly coupled (DC) GaAs microwave monolithic integrated circuit (MMIC) driver amplifier die designed for use as a Mach Zehnder Modulated (MZM) laser driver
More informationHOTBAR REFLOW SOLDERING
HOTBAR REFLOW SOLDERING Content 1. Hotbar Reflow Soldering Introduction 2. Application Types 3. Process Descriptions > Flex to PCB > Wire to PCB 4. Design Guidelines 5. Equipment 6. Troubleshooting Guide
More informationHMC-SDD112 SWITCHES - CHIP. GaAs PIN MMIC SPDT SWITCH GHz. Typical Applications. Features. General Description. Functional Diagram
Typical Applications This is ideal for: FCC E-Band Communication Systems Short-Haul / High Capacity Radios Automotive Radar Test & Measurement Equipment SATCOM Sensors Features Low Insertion Loss: 2 db
More informationSilicon Interposers enable high performance capacitors
Interposers between ICs and package substrates that contain thin film capacitors have been used previously in order to improve circuit performance. However, with the interconnect inductance due to wire
More informationFeatures OBSOLETE. Output Third Order Intercept (IP3) [2] dbm Total Supply Current ma
v.1111 Typical Applications Features The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Military & Space Functional Diagram P1dB Output Power: + dbm Psat Output Power: +
More informationFeatures. DC - 2 GHz GHz Supply Current (Idd) 400 ma
Typical Applications The HMC637A is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional Diagram Features P1dB Output Power: +3.5 dbm Gain:
More informationCree TR5050M LEDs CxxxTR5050M-Sxx000
Cree TR55M LEDs CxxxTR55M-Sxx Data Sheet Cree s TR55M LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree s proprietary device technology and
More informationPRINTED CIRCUIT BOARD (PCB) MICRO-SECTIONING FOR QUALITY CONTROL
SUMNotes PUBLISHED BY BUEHLER, A DIVISION OF ILLINOIS TOOL WORKS VOLUME 5, ISSUE 1 PRINTED CIRCUIT BOARD (PCB) MICRO-SECTIONING FOR QUALITY CONTROL Introduction Quality control in Printed Circuit Board
More informationHMC985A. attenuators - analog - Chip. GaAs MMIC VOLTAGE - VARIABLE ATTENUATOR, GHz. Features. Typical Applications. General Description
Typical Applications The is ideal for: Point-to-Point Radio VSAT Radio Test Instrumentation Microwave Sensors Military, ECM & Radar Functional Diagram v2.917 ATTENUATOR, 2-5 GHz Features Wide Bandwidth:
More informationFeatures. = +25 C, 50 Ohm System, Vcc = 5V
Typical Applications Prescaler for DC to X Band PLL Applications: Satellite Communication Systems Fiber Optic Point-to-Point and Point-to-Multi-Point Radios VSAT Functional Diagram v4.9 Features DIVIDE-BY-8,
More informationHMC906A. Amplifiers - Linear & Power - CHIP. Electrical Specifications, T A. Typical Applications. Features. General Description. Functional Diagram
Typical Applications Features The HMC96A is ideal for: Satellite Communications Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Functional Diagram Saturated Output Power: +33.5
More information5 6.4 GHz 2 Watt Power Amplifier
5 6.4 GHz 2 Watt Power Amplifier Features Frequency Range : 5 6.4GHz 32.5 dbm output P1dB 9 db Power gain 32% PAE High IP3 Input Return Loss > 12 db Output Return Loss > 12 db Dual bias operation No external
More informationPull Force and Tail Breaking Force Optimization of the Crescent Bonding Process with Insulated Au Wire. Experimental
Pull Force and Tail Breaking Force Optimization of the Crescent Bonding Process with Insulated Au 1 J. Lee, 1 M. Mayer, 1 Y. Zhou and 2 J. Persic 1 Microjoining Lab, Centre of Advanced Materials Joining,
More information14 GHz to 32 GHz, GaAs, MMIC, Double Balanced Mixer HMC292A
14 GHz to 32 GHz, GaAs, MMIC, Double Balanced Mixer FEATURES Passive: no dc bias required Conversion loss (downconverter): 9 db typical at 14 GHz to 3 GHz Single-sideband noise figure: 11 db typical at
More informationElectronic materials and components-semiconductor packages
Electronic materials and components-semiconductor packages Semiconductor back-end processes We will learn much more about semiconductor back end processes in subsequent modules, but you need to understand
More informationFeatures. = +25 C, Vdd = +10V, Idd = 350mA
Typical Applications The is ideal for: Test Instrumentation Military & Space Functional Diagram Features High P1dB Output Power: +28 dbm High : 14 db High Output IP3: +41 dbm Single Supply: +V @ 3 ma Ohm
More informationSEMITOP Mounting instructions
SEMITOP Mounting instructions ESD protection... 1 Temperature sensor... 1 Electrical isolation... 2 Heat sink specification... 2 Mounting surface... 3 Assembling Steps... 4 Thermal grease application...
More informationFeatures OBSOLETE. = +25 C, 50 Ohm system, Vdd = +5V. Parameter Frequency Min. Typ. Max. Units GHz
Typical Applications v.91 ATTENUATOR,.5-6. GHz Features The is ideal for: Point-to-Point Radio Cellular/3G & WiMAX/4G Infrastructure Test Instrumentation Microwave Sensors Military, ECM & Radar Functional
More informationFeatures. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]
Typical Applications This is ideal for: Features Low Noise Figure: 1.8 db Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation Functional Diagram High Gain: 19 db High
More informationFeatures OBSOLETE. = +25 C, With 0/+5V Control, 50 Ohm System
Typical Applications This switch is suitable for usage in 50- Ohm or 75-Ohm systems: Broadband Fiber Optics Switched Filter Banks Wireless below 8 GHz Functional Diagram Features Broadband Performance:
More informationWLP User's Guide. CMOS IC Application Note. Rev.1.0_03. ABLIC Inc., 2014
CMOS IC Application Note WLP User's Guide ABLIC Inc., 2014 This document is a reference manual that describes the handling of the mounting of super-small WLP (Wafer Level Package) for users in the semiconductor
More informationFeatures +3V +5V GHz
Typical Applications The is ideal for: Cellular/4G Infrastructure WiMAX, WiBro & Fixed Wireless Automotive Telematics Mobile Radio Test Equipment Functional Diagram Features High Isolation: up to Single
More informationNBB-310 Cascadable Broadband GaAs MMIC Amplifier DC to 12GHz
Cascadable Broadband GaAs MMIC Amplifier DC to 12GHz NBB-310 The NBB-310 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification
More informationMaintenance/ Discontinued
Hall ICs DN6848/SE/S Wide operating temperature range ( 40 C to +00 C) One-way magnetic field operation Overview In each of Hall ICs, a Hall element, an amplifier circuit, a Schmidt circuit, a stabilized
More information