SamHop Microelectronics C orp. Green Product Dual N-Channel Enhancement Mode Field Effect Traistor STF8 Ver. PRODUCT SUMMRY VDSS ID RDS(ON) (mω) Max 3. @ VGS=4.V V 8. @ VGS=.V FETURES Super high dee cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. P IN G S S D/D G TDFN X3 (Bottom view) G S S Bottom Drain Contact (D/D) 3 4 G BSOLUTE MXIMUM RTINGS (T = C unless otherwise noted) Symbol V DS V GS I D I DM P D T J, T STG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous c -Pulsed a c Maximum Power Dissipation Operating Junction and Storage Temperature Range T = C T =7 C T = C T =7 C Limit ± 8.4 48.. - to Units V V W W C THERML CHRCTERISTICS R J Thermal Resistance, Junction-to-mbient 8 C/W Details are subject to change without notice. Jul,8,4
STF8 Ver. ELECTRICL CHRCTERISTICS (T= C unless otherwise noted) Symbol Parameter Conditio Min Typ Max Units OFF CHRCTERISTICS BVDSS Drain-Source Breakdown Voltage VGS=V, ID=u V IDSS Zero Gate Voltage Drain Current VDS=V, VGS=V u IGSS Gate-Body Leakage Current VGS= ±8V, VDS=V ± u ON CHRCTERISTICS VGS(th) Gate Threshold Voltage VDS=VGS, ID=u..7. V RDS(ON) Drain-Source On-State Resistance VGS=4.V, ID=. 8.. 3. m ohm VGS=3.7V, ID=. 8.. 4. m ohm VGS=3.V, ID=. 9... m ohm VGS=.V, ID=.... m ohm g FS Forward Traconductance VDS=V, ID=4 3 S DYNMIC CHRCTERISTICS b CISS Input Capacitance 7 pf VDS=V,VGS=V COSS Output Capacitance 3 pf f=.mhz CRSS Reverse Trafer Capacitance 8 pf SWITCHING CHRCTERISTICS td(on) Turn-On Delay Time tr Rise Time td(off) tf Fall Time Qg Qgs Qgd Turn-Off Delay Time Total Gate Charge Gate-Source Charge Gate-Drain Charge b VDD=V ID= VGS=4.V RGEN= ohm VDS=V,ID=4,VGS=4.V 3.4 nc VDS=V,ID=4,VGS=.V. nc VDS=V,ID=4, VGS=4V 89 nc nc DRIN-SOURCE DIODE CHRCTERISTICS ND MXIMUM RTINGS VSD Diode Forward Voltage VGS=V,IS=.7. V Notes a.pulse Test:Pulse Width < _ us, Duty Cycle < _ %. b.guaranteed by design, not subject to production testing. c.drain current limited by maximum junction temperature. d.mounted on FR4 Board of inch, oz. Jul,8,4
STF8 Ver. VGS=4V ID, Drain Current() 48 3 4 VGS=3V VGS=.V VGS=V VGS=.V ID, Drain Current() 9 3 Tj= C C - C..... 3. VDS, Drain-to-Source Voltage(V) Figure. Output Characteristics.4.8....4 VGS, Gate-to-Source Voltage(V) Figure. Trafer Characteristics 3. RDS(on)(m Ω) VGS=.V VGS=4.V RDS(on), On-Resistance Normalized.8..4.. V GS=4.V ID= V GS=.V ID= 4 3 48 7 Tj( C ) ID, Drain Current() Tj, Junction Temperature( C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature Vth, Normalized Gate-Source Threshold Voltage..4...8..4. - - 7 VDS=VGS ID=u BVDSS, Normalized Drain-Source Breakdown Voltage.....9.9.8 - ID=u - 7 Tj, Junction Temperature( C ) Figure. Gate Threshold Variation with Temperature Tj, Junction Temperature( C ) Figure. Breakdown Voltage Variation with Temperature 3 Jul,8,4
STF8 Ver. RDS(on)(m Ω) 3 7 C ID= C C Is, Source-drain current().. C. C 7 C..... 3. 3. 4.....7.. VGS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current C, Capacitance(pF) 8 Crss 4 Ciss Coss 4 8 VGS, Gate to Source Voltage(V) 8 4 VDS=V ID=4 3 9 8 4 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure. Gate Charge Switching Time() 3 TD(off ) VDS=V,ID= VGS=4.V Rg, Gate Resistance(Ω) Tr TD(on) Tf ID, Drain Current() R DS(ON) Limit DC ms ms ms us us VGS=4.V. Single Pulse T= C.3. VDS, Drain-Source Voltage(V) Figure. switching characteristics Figure. Maximum Safe Operating rea 4 Jul,8,4
STF8 Ver. Normalized Traient Thermal Resistance.. P DM.. t t... R thj (t)=r (t) * R thj. R thj=s ee Datasheet. 3. T JM-T = P DM* R thj (t) Single Pulse 4. Duty Cycle, D=t/t...... Square Wave Pulse Duration(sec) Normalized Thermal Traient Impedance Curve Jul,8,4
STF8 Ver. PCKGE OUTLINE DIMENSIONS TDFN E L D TDFN ( x 3 ) - L e H PIN # DOT BY MRKING TOP VIEW F C BOTTOM VIEW PIN # ID CHMFER.3mm SIDE VIEW B SYMBOLS D E H L e B C F MILLIMETERS INCHES MIN MX MIN MX.7.8.8.3.....9 3....9..77.8.3.4.4.8.4..7...7..9.9..7.8..3.8.. BSC. BSC Jul,8,4
STF8 Ver. TOP MRKING DEFINITION TDFN x3-l Pin 8 XXXXXX Product No. SMC Internal Code No.(,B...Z) Wafer Lot No. Production Date (, ~ 9,,B...) Production Month (, ~ 9,,B,C) Production Year (9 = 9, =...) 7 Jul,8,4