Ultra Low On-Resistance P-hannel MOSFET Surface Mount vailable in Tape & Reel P- 94022 IRF7425 HEXFET Power MOSFET Ω) I V SS R S(on) max (mω) 20V 8.2@V GS = -4.5V -5 3@V GS = -2.5V -3 escription These P-hannel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. S S S G 8 2 7 3 6 4 5 Top View SO-8 bsolute Maximum Ratings Parameter Max. Units V S rain- Source Voltage -20 V I @ T = 25 ontinuous rain urrent, V GS @ -4.5V -5 I @ T = 70 ontinuous rain urrent, V GS @ -4.5V -2 I M Pulsed rain urrent -60 P @T = 25 Power issipation 3 2.5 P @T = 70 Power issipation 3.6 W Linear erating Factor 20 mw/ V GS Gate-to-Source Voltage ± 2 V T J, T STG Junction and Storage Temperature Range -55 to + 50 Thermal Resistance Parameter Max. Units R θj Maximum Junction-to-mbient3 50 /W www.irf.com /20/0
Electrical haracteristics @ T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions V (BR)SS rain-to-source Breakdown Voltage -20 V V GS = 0V, I = -250µ V (BR)SS / T J Breakdown Voltage Temp. oefficient 0.00 V/ Reference to 25, I = -m R S(on) Static rain-to-source On-Resistance 8.2 V GS = -4.5V, I = -5 2 mω 3 V GS = -2.5V, I = -3 2 V GS(th) Gate Threshold Voltage -0.45 -.2 V V S = V GS, I = -250µ g fs Forward Transconductance 44 S V S = -0V, I = -5 I SS rain-to-source Leakage urrent -.0 V S = -6V, V GS = 0V µ -25 V S = -6V, V GS = 0V, T J = 70 I GSS Gate-to-Source Forward Leakage -00 V GS = -2V n Gate-to-Source Reverse Leakage 00 V GS = 2V Q g Total Gate harge 87 30 I = -5 Q gs Gate-to-Source harge 8 27 n V S = -0V Q gd Gate-to-rain ("Miller") harge 2 32 V GS = -4.5V t d(on) Turn-On elay Time 3 V = -0V 2 t r Rise Time 20 I = -.0 ns t d(off) Turn-Off elay Time 230 R G = 6.0Ω t f Fall Time 60 V GS = -4.5V iss Input apacitance 7980 V GS = 0V oss Output apacitance 480 pf V S = -5V rss Reverse Transfer apacitance 980 ƒ =.0kHz Source-rain Ratings and haracteristics Parameter Min. Typ. Max. Units onditions I S ontinuous Source urrent MOSFET symbol -2.5 (Body iode) showing the I SM Pulsed Source urrent integral reverse G -60 (Body iode) p-n junction diode. S V S iode Forward Voltage -.2 V T J = 25, I S = -2.5, V GS = 0V 2 t rr Reverse Recovery Time 20 80 ns T J = 25, I F = -2.5 Q rr Reverse Recovery harge 60 240 n di/dt = -00/µs 2 Notes: Repetitive rating; pulse width limited by max. junction temperature. 3 Surface mounted on in square u board, t 0sec. 2 Pulse width 400µs; duty cycle 2%. 2 www.irf.com
-I, rain-to-source urrent () 000 00 0 0. VGS TOP -7.0V -5.0V -4.5V -2.5V -.8V -.5V -.2V BOTTOM -.0V -.0V 20µs PULSE WITH T J = 25 0.0 0. 0 00 -V S, rain-to-source Voltage (V) -I, rain-to-source urrent () 000 00 0 VGS TOP -7.0V -5.0V -4.5V -2.5V -.8V -.5V -.2V BOTTOM -.0V -.0V 20µs PULSE WITH T J = 50 0. 0. 0 00 -V S, rain-to-source Voltage (V) Fig. Typical Output haracteristics Fig 2. Typical Output haracteristics -I, rain-to-source urrent () 00 0 T J = 50 T J = 25 V S= -5V 20µs PULSE WITH 0..0.2.4.6.8 2.0 2.2 -V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) 2.0 I = -5.5.0 0.5 V GS= -4.5V 0.0-60 -40-20 0 20 40 60 80 00 20 40 60 T J, Junction Temperature ( ) Fig 3. Typical Transfer haracteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3
, apacitance (pf) 2000 0000 8000 6000 4000 2000 VGS = 0V, f=mhz iss = gs +gd, ds rss = gd oss = ds +gd iss oss rss SHORTE -V GS, Gate-to-Source Voltage (V) 8 6 4 2 I = -5 V S =-6V V S =-0V 0 0 00 -V S, rain-to-source Voltage (V) 0 0 40 80 20 60 Q G,TotalGateharge(n) Fig 5. Typical apacitance Vs. rain-to-source Voltage Fig 6. Typical Gate harge Vs. Gate-to-Source Voltage -I S, Reverse rain urrent () 00 0 T J = 50 T J = 25 V GS = 0 V 0. 0.2 0.4 0.6 0.8.0 -V S,Source-to-rain Voltage (V) -I I, rain urrent () 000 00 0 OPERTION IN THIS RE LIMITE BY R S(on) 00us ms 0ms T =25 TJ = 50 Single Pulse 0. 0 00 -V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating rea 4 www.irf.com
5 V S R -I, rain urrent () 2 9 6 3 0 25 50 75 00 25 50 T, ase Temperature ( ) 0% R G V GS V GS Pulse Width µs uty Factor 0. %.U.T. V GS t d(on) t r t d(off) t f + - V Fig 0a. Switching Time Test ircuit Fig 9. Maximum rain urrent Vs. ase Temperature 90% V S Fig 0b. Switching Time Waveforms 00 Thermal Response (Z thj ) 0 0. = 0.50 0.20 0.0 0.05 0.02 0.0 SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t /t 2 2. Peak T J= P M xz thj +T 0.0 0.0000 0.000 0.00 0.0 0. 0 00 t, Rectangular Pulse uration (sec) PM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-mbient www.irf.com 5
R S(on), rain-to -Source On Resistance ( Ω) R S (on), rain-to-source On Resistance (Ω) IRF7425 0.05 0.00 0.009 V GS = -2.5V 0.008 0.00 I = -5 0.007 0.005.0 2.0 3.0 4.0 5.0 -V GS, Gate -to -Source Voltage (V) 0.006 0.005 V GS = -4.5V 0 0 20 30 40 50 60 -I, rain urrent () Fig 2. Typical On-Resistance Vs. Gate Voltage Fig 3. Typical On-Resistance Vs. rain urrent urrent Regulator Same Type as.u.t. 50KΩ Q G 2V.2µF.3µF Q GS Q G.U.T. - + V S V G V GS -3m harge I G I urrent Sampling Resistors Fig 4a. Basic Gate harge Waveform Fig 4b. Gate harge Test ircuit 6 www.irf.com
-V GS(th), Variace ( V ) Power (W) IRF7425 3.0 20 00 2.5 80 I = -250µ 60 2.0 40 20.5-75 -50-25 0 25 50 75 00 25 50 T J, Temperature ( ) 0 0.00 0.00 0.00.000 0.000 00.000 Time (sec) Fig 5. Typical Vgs(th) Variance Vs. Juction Temperature Fig 6. Typical Power Vs. Time www.irf.com 7
SO-8 Package etails E 6 6X 5 8 7 6 5 2 3 4 e B H 0.25 [.00] IM INHES MILLIMETERS MIN MX MIN MX.0532.0040.0688.0098.35 0.0.75 0.25 b.03.020 0.33 0.5 c.0075.0098 0.9 0.25 E e e H K L y.89.968.497.574.050 BSI.27 BSI.025 BSI 0.635 BSI.2284.2440.0099.096.06.050 0 8 4.80 5.00 3.80 4.00 5.80 6.20 0.25 0.50 0.40.27 0 8 e y Kx45 8X b 0.25 [.00] B 0.0 [.004] 8X L 7 8X c NOTES:. IMENSIONING & TOLERNING PER SME Y4.5M-994. 2. ONTROLLING IMENSION: MILLIMETER 3. IMENSIONS RE SHOWN IN MILLIMETERS [INHES]. 4. OUTLINE ONFORMS TO JEE OUTLINE MS-02. 5 IMENSION OES NOT INLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXEE 0.5 [.006]. 6 IMENSION OES NOT INLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXEE 0.25 [.00]. 7 IMENSION IS THE LENGTH OF LE FOR SOLERING TO SUBSTRTE. SO-8 Part Marking 6.46 [.255] 3X.27 [.050] FOOTPRINT 8X 0.72 [.028] 8X.78 [.070] TE OE (YWW) Y = LST IGIT OF THE YER 8 www.irf.com EXMPLE: THIS IS N IRF70 (MOSFET)
Tape and Reel TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRETION NOTES:. ONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INHES). 3. OUTLINE ONFORMS TO EI-48 & EI-54. 330.00 (2.992) MX. NOTES :. ONTROLLING IMENSION : MILLIMETER. 2. OUTLINE ONFORMS TO EI-48 & EI-54. 4.40 (.566 ) 2.40 (.488 ) ata and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, alifornia 90245, US Tel: (30) 252-705 T Fax: (30) 252-7903 Visit us at www.irf.com for sales contact information. /0 www.irf.com 9