2399-P589-41-PM flowpim 1 3rd gen / Features 3~ rectifier, BRC, Inverter, NTC ery compact housing, easy to route IGBT4 / EmCon4 technology for low saturation losses and improved EMC behaviour flowpim1 housing Motor Drives Power Generation Target pplicatio Schematic 2399-P589-41-PM Types Maximum Ratings, unless otherwise specified Parameter Symbol Condition alue Unit Input Rectifier Diode Repetitive peak reverse voltage RRM 16 Forward current per diode I F DC current 33 I FSM Surge forward current t p =1ms T j = I 2 t-value I 2 t 31 2 s Power dissipation per Diode 38 Maximum Junction Temperature T j max 15 Inverter Traistor Collector-emitter break down voltage CE DC collector current I C 27 Repetitive peak collector current I Cpulse t p limited by T j max 75 Power dissipation per IGBT 72 Gate-emitter peak voltage GE ±2 Short circuit ratings t SC T j 15 1 μs CC GE =15 8 Maximum Junction Temperature T j max 175 copyright incotech 1 Revision: 1
2399-P589-41-PM Maximum Ratings, unless otherwise specified Parameter Symbol Condition alue Unit Inverter Diode Peak Repetitive Reverse oltage RRM T j = DC forward current I F 27 Repetitive peak forward current I FRM t p limited by T j max 5 Power dissipation per Diode 51 Maximum Junction Temperature T j max 175 BRC Traistor Collector-emitter break down voltage CE DC collector current I C 2 Repetitive peak collector current I Cpuls t p =1ms 45 Power dissipation per IGBT 64 Gate-emitter peak voltage GE ±2 Short circuit ratings t SC T j 15 1 μs CC GE =15 8 Maximum Junction Temperature T j max 175 BRC Diode Peak Repetitive Reverse oltage RRM T j = DC forward current I F 16 Repetitive peak forward current I FRM t p =1ms 2 Power dissipation per Diode 39 Maximum Junction Temperature T j max 175 Thermal properties Storage temperature T stg -4 +1 Operation temperature under switching condition T op -4 +Tjmax- Iulation properties Iulation voltage is t=1min 4 DC Creepage distance min 12.7 mm Clearance min 12.7 mm copyright incotech 2 Revision: 1
2399-P589-41-PM Characteristic alues Parameter Symbol Conditio alue Unit GE [] or GS [] r [] or CE [] or DS [] I C [] or I F [] or I D [] T j Min Typ Max Input Rectifier Diode Forward voltage Threshold voltage (for power loss calc. only) Slope resistance (for power loss calc. only) F to r t 5.8.93.8 1.31 1.6 Tj=1 Tj=1 Tj=1.83.1 1.32 Reverse current I r 15.2 2 1.78 thickness 5μm Thermal resistance chip to case per chip R thjc λ=.61/mk n.. Ω m K/ Traistor Inverter Gate emitter threshold voltage Collector-emitter saturation voltage Collector-emitter cut-off current incl. Diode Gate-emitter leakage current GE(th) CE(sat) I CES I GES CE=GE 15 2.85 5 5.8 6.5 1.87 2.2 2.32. 2 m n Integrated Gate resistor R gint none Ω Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy loss per pulse Turn-off energy loss per pulse t d(on) t r t d(off) t f E on E off ±15 6 127 32 286 118 3 2.16 ms Input capacitance C ies 1.43 Output capacitance C oss f=1mhz.115 nf Reverse trafer capacitance C rss Gate charge Q Gate ±15 6 12 1.31 thickness 5μm Thermal resistance chip to case per chip R thjc λ=.61/mk n...85 nc K/ K/ Diode Inverter Diode forward voltage F 1.93 2.2 1.91 Reverse leakage current Peak reverse recovery current I R I RRM 1 21.68 μ Reverse recovery time Reverse recovered charge t rr Q rr ±15 6 4.94 588 μc Peak rate of fall of recovery current di(rec)max /dt 48 /μs Reverse recovered energy Erec 1.97 ms 1.85 thickness 5μm Thermal resistance chip to case per chip R thjc λ=.61/mk copyright incotech 3 Revision: 1
2399-P589-41-PM Characteristic alues Parameter Symbol Conditio alue Unit GE [] or GS [] r [] or CE [] or DS [] I C [] or I F [] or I D [] T j Min Typ Max Traistor BRC Gate emitter threshold voltage Collector-emitter saturation voltage CE(sat) 3 Collector-emitter cut-off Gate-emitter leakage current GE(th) I CES I GES CE=GE 2.5 15 5 5.8 6.5 1.6 1.84 2.3 1.77.5 2 m n Integrated Gate resistor R gint Ω Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy loss per pulse Turn-off energy loss per pulse t d(on) t r t d(off) t f E on E off ±15 6 15 ms Input capacitance C ies.9 Output capacitance C oss f=1mhz.8 pf Reverse trafer capacitance C rss Gate charge Q Gate ±15 6 15 1.47 thickness 5μm Thermal resistance chip to case per chip R thjc λ=.61/mk.55 nc K/ Diode BRC Diode forward voltage Reverse leakage current Peak reverse recovery current Reverse recovery time Reverse recovered charge Peak rate of fall of recovery current Reverse recovery energy F I r I RRM t rr Q rr 1.17 2.2.95 5 di(rec)max /dt E rec 2.43 thickness 5μm Thermal resistance chip to case per chip R thjc λ=.61/mk 1 6 15 μ μc /μs ms K/ Thermistor Rated resistance R 2.9 22 23.1 Tj=1.75 kω Operating current I.3 m Power dissipation P 2 m B-value B (/5) Tol. ±3% 395 K copyright incotech 4 Revision: 1
Package Outline and Pinout 2399-P589-41-PM Outline Pinout copyright incotech 5 Revision: 1
2399-P589-41-PM PRODUCT STTUS DEFINITIONS Datasheet Status Target Preliminary Product Status Formative or In Design First Production Definition This datasheet contai the design specificatio for product development. Specificatio may change in any manner without notice. The data contained is exclusively intended for technically trained staff. This datasheet contai preliminary data, and supplementary data may be published at a later date. incotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. Final Full Production This datasheet contai final specificatio. incotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. DISCLIMER The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested values please contact incotech.incotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. incotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any licee under its patent rights, nor the rights of others. LIFE SUPPORT POLICY incotech products are not authorised for use as critical components in life support devices or systems without the express written approval of incotech. s used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with itructio for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright incotech 6 Revision: 1