SM Type N-Channel Enhancement Features VS (V) = 30V SOP-8 I = 6 A (VGS = 0V) RS(ON) < 6.8mΩ (VGS = 0V) HEXFET Power S 8 A.50 0.5 S S 2 3 7 6 0.2 +0.04-0.02 G 4 5 Absolute Maximum Ratings Ta = 25 Parameter rain-source Voltage Gate-Source Voltage Continuous rain Current Pulsed rain Current Avalanche Current Single Pulse Avalanche Energy Power issipation Thermal Resistance.Junction- to-ambient Thermal Resistance.Junction- to-case Junction Temperature Storage Temperature Range Symbol Rating Unit VS 30 VGS ±20 TA=25 6 TA=70 2 I IM 20 IAR 2 EAS 72 mj TA=25 2.5 P TA=70.6 RthJA 50 RthJC 20 V A W /W TJ 50 Tstg -55 to 50
SM Type N-Channel Enhancement Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit rain-source Breakdown Voltage VSS I=250μA, VGS=0V 30 V Zero Gate Voltage rain Current ISS VS=24V, VGS=0V VS=24V, VGS=0V, TJ=25 50 μa Gate-Body Leakage Current IGSS VS=0V, VGS=±20V ±00 na Gate Threshold Voltage VGS(th) VS=VGS, I=250μA.35 2.25 V Static rain-source On-Resistance RS(On) VGS=0V, I=6A 5.5 6.8 mω VGS=4.5V, I=3A 7.0 8.7 Forward Transconductance gfs VS=5V, I=2A 64 S Input Capacitance Ciss 2080 Output Capacitance Coss VGS=0V, VS=5V, f=mhz 480 pf Reverse Transfer Capacitance Crss 220 Gate Resistance Rg VGS=0V, VS=0V, f=mhz.0 2. Ω Total Gate Charge Qg 8 27 Gate Source Charge Qgs 4.7 Gate Source Charge Qgs2.6 VGS=4.5V, VS=5V, I=2A Gate rain Charge Qgd 6.2 nc Gate Charge Overdrive Qgodr 5.5 Switch Charge(Qgd+Qgs2) QSW 7.8 Output Charge QOSS VGS=0V, VS=6V 0 Turn-On elaytime td(on) Turn-On Rise Time tr 0 VGS=4.5V, VS=5V,I=2A Turn-Off elaytime td(off) 4 ns Turn-Off Fall Time tf 3.7 Body iode Reverse Recovery Time trr 29 44 IF= 2A, di/dt= 00A/μs,V=5V Body iode Reverse Recovery Charge Qrr 20 30 nc Maximum Body-iode Continuous Current IS 3. Pulsed Source Gurrent ISM 20 A iode Forward Voltage VS IS=2A,VGS=0V V 2
R S(on), rain-to-source On Resistance (Normalized) I, rain-to-source Current (A) I, rain-to-source Current (A) SM Type N-Channel Enhancement 000 000 00 00 0 2.5V 0 2.5V 0. 20µs PULSE WITH Tj = 25 C 0.0 0. 0 00 V S, rain-to-source Voltage (V) 20µs PULSE WITH Tj = 50 C 0.0 0. 0 00 V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 000 2.0 I = 6A V GS = 0V I, rain-to-source Current (Α) 00.5 T J = 50 C 0.0 T J = 25 C V S = 5V 20µs PULSE WITH 2.5 3.0 3.5 4.0 4.5 V GS, Gate-to-Source Voltage (V) 0.5-60 -40-20 0 20 40 60 80 00 20 40 60 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3
I S, Reverse rain Current (A) I, rain-to-source Current (A) C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) SM Type N-Channel Enhancement 0000 V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTE C rss = C gd C oss = C ds + C gd 2 0 I = 2A V S = 24V VS= 5V Ciss 8 000 6 Coss 4 Crss 2 00 0 00 V S, rain-to-source Voltage (V) 0 0 0 20 30 40 Q G Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 000.0 000 OPERATION IN THIS AREA LIMITE BY R S (on) 00.0 00 0.0 T J = 50 C. 0 00µsec T.0 J = 25 C V GS = 0V 0. 0.2 0.4 0.6 0.8.0.2 V S, Source-torain Voltage (V) msec 0msec Tc = 25 C Tj = 50 C Single Pulse 0..0 0.0 00.0 V S, rain-tosource Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 4
I, rain Current (A) V GS(th) Gate threshold Voltage (V) SM Type N-Channel Enhancement 6 2.2 2 8 2.0.8.6 I = 250µA 4.4.2 0 25 50 75 00 25 50 T J, Junction Temperature ( C) Fig 9. Maximum rain Current Vs. Case Temperature.0-75 -50-25 0 25 50 75 00 25 50 T J, Temperature ( C ) Fig 0. Threshold Voltage Vs. Temperature 00 Thermal Response ( Z thja ) 0 0. 0.0 0.00 = 0.50 0.20 0.0 0.05 0.02 0.0 SINGLE PULSE ( THERMAL RESPONSE ) R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri E-006 E-005 0.000 0.00 0.0 0. 0 00 t, Rectangular Pulse uration (sec) R 4 R 4 τ.08 0.000437 C τ 2.880 0.23428 τ 4 τ 4 24.9 2.335.862 52 Notes:. uty Factor = t/t2 2. Peak Tj = P dm x Zthja + Tc Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Ri ( C/W) τi (sec) 5
E A S, Single Pulse Avalanche Energy (mj) SM Type N-Channel Enhancement R S (on), rain-to -Source On Resistance (Ω) 0.03 0.02 300 250 200 I TOP 6.0A 6.9A BOTTOM 2A 50 0.0 T J = 25 C 00 T J = 25 C 50 0.00 2.0 4.0 6.0 8.0 0.0 V GS, Gate-to-Source Voltage (V) 0 25 50 75 00 25 50 Starting T J, Junction Temperature ( C) Fig 2. On-Resistance Vs. Gate Voltage Fig 3c. Maximum Avalanche Energy Vs. rain Current 6