% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS RDSON ID 3V mω A Description TO Pin Configuration The is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The meet the RoHS and Green Product requirement % EAS guaranteed with full function reliability approved. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 3 V VGS Gate-Source Voltage ± V ID@TC=5 Continuous Drain Current, VGS @ V A ID@TC= Continuous Drain Current, VGS @ V 7 A ID@TA=5 Continuous Drain Current, VGS @ V 7 A ID@TA=7 Continuous Drain Current, VGS @ V A IDM Pulsed Drain Current 5 A EAS Single Pulse Avalanche Energy 3 5 mj IAS Avalanche Current 53. A PD@TC=5 Total Power Dissipation. W PD@TA=5 Total Power Dissipation W TSTG Storage Temperature Range -55 to 5 TJ Operating Junction Temperature Range -55 to 5 Thermal Data Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient --- /W RθJC Thermal Resistance Junction-Case ---. /W
Electrical Characteristics (T J=5, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=V, ID=5uA 3 --- --- V BVDSS/ TJ BVDSS Temperature Coefficient Reference to 5, ID=mA ---.3 --- V/ RDS(ON) Static Drain-Source On-Resistance VGS=V, ID=3A --- --- VGS=.5V, ID=5A --- --- m VGS(th) Gate Threshold Voltage. ---.5 V VGS=VDS, ID =5uA VGS(th) VGS(th) Temperature Coefficient --- -5.73 --- mv/ IDSS VDS=V, VGS=V, TJ=5 --- --- Drain-Source Leakage Current ua VDS=V, VGS=V, TJ=55 --- --- 5 IGSS Gate-Source Leakage Current VGS=±V, VDS=V --- --- ± na gfs Forward Transconductance VDS=5V, ID=3A ---.5 --- S Rg Gate Resistance VDS=V, VGS=V, f=mhz ---. --- Qg Total Gate Charge (.5V) --- 3. --- Qgs Gate-Source Charge VDS=V, VGS=.5V, ID=A ---. --- nc Qgd Gate-Drain Charge --- 3. --- Td(on) Turn-On Delay Time ---. --- Tr Rise Time VDD=5V, VGS=V, RG=.5 --- 9 --- ns Td(off) Turn-Off Delay Time ID=A --- 35 --- Tf Fall Time --- 7. --- Ciss Input Capacitance --- 375 --- Coss Output Capacitance VDS=5V, VGS=V, f=mhz --- --- pf Crss Reverse Transfer Capacitance --- 35 --- Diode Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current,5 --- --- A VG=VD=V, Force Current ISM Pulsed Source Current,5 --- --- 5 A VSD Diode Forward Voltage VGS=V, IS=A, TJ=5 --- --- V Note :.The data tested by surface mounted on a inch FR- board with OZ copper..the data tested by pulsed, pulse width 3us, duty cycle % 3.The EAS data shows Max. rating. The test condition is V DD=5V,V GS=V,L=.mH,I AS=53.A.The power dissipation is limited by 5 junction temperature 5.The data is theoretically the same as I D and I DM, in real applications, should be limited by total power dissipation.
Typical Characteristics 5. ID Drain Current (A) V GS =V V GS =7V V GS =5V V GS =.5V V GS =3V RDSON(mΩ).5. I D =A.5.5.75 V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics 3.5 V GS (V) Fig. On-Resistance vs. G-S Voltage IS Source Current(A).5 T J =5 T J =5.... V SD, Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse VGS Gate to Source Voltage (V). I D = Q G, Total Gate Cha Fig. Gate-Charge Characteristics Normalized VGS(th).5 Normalized On Resistance.5. -5 5 75 T J,Junction Temperature ( ).5-5 5 75 T J, Junction Temperature ( ) Fig.5 Normalized V GS(th) vs. T J Fig. Normalized R DSON vs. T J 3
F=.MHz. us Ciss. us Capacitance (pf) Coss Crss ID (A).. ms ms DC 5 9 3 7 5 V DS Drain to Source Voltage(V) Fig.7 Capacitance.. T C =5 Single Pulse. V DS (V) Fig. Safe Operating Area Normalized Thermal Response (RθJC). DUTY=.5.3..5 P DM T ON. T D = T ON /T. T J peak = T C + P DM x R θjc SINGLE PULSE...... t, Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance V DS 9% EAS= BV DSS L x I AS x BV DSS BV DSS -V DD V DD % I AS V GS T d(on) T r T d(off) T f T on T off V GS Fig. Switching Time Waveform Fig. Unclamped Inductive Switching Waveform
Package Information ( TO--3L ) 5