Green Product SamHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Traistor PRODUCT SUMMRY VDSS ID RDS(ON) (mω) Max 55 @ VGS=V V 5.5 7 @ VGS=4.5V FETURES Super high dee cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. D 5 4 G D S SO-8 D D 7 8 G S BSOLUTE MXIMUM RTINGS (T =5 C unless otherwise noted) Symbol V DS V GS I D I DM P D T J, T STG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a -Pulsed b Maximum Power Dissipation a Operating Junction and Storage Temperature Range T =5 C Limit ± 5.5 5 Units V V T =7 C 4.5 T =5 C T =7 C.8 W -55 to 5 W C THERML CHRCTERISTICS a R J Thermal Resistance, Junction-to-mbient.5 C/W Details are subject to change without notice. pr,7,
ELECTRICL CHRCTERISTICS (TC=5 C unless otherwise noted) Symbol Parameter Conditio Min Typ Max Units OFF CHRCTERISTICS BVDSS Drain-Source Breakdown Voltage VGS=V,ID=5u V IDSS Zero Gate Voltage Drain Current VDS=48V, VGS=V u IGSS Gate-Body leakage current VGS= ±V,VDS=V ± n ON CHRCTERISTICS VGS(th) Gate Threshold Voltage VDS=VGS,ID=5u.8 V VGS=V, ID=4.5 47 55 m ohm RDS(ON) Drain-Source On-State Resistance VGS=4.5V, ID= 55 7 m ohm g FS Forward Traconductance VDS=5V,ID=4.5 S DYNMIC CHRCTERISTICS CISS Input Capacitance pf VDS=5V,VGS=V COSS Output Capacitance 75 pf f=.mhz CRSS Reverse Trafer Capacitance 55 pf SWITCHING CHRCTERISTICS td(on) tr td(off) tf Qg Qgs Qgd Turn-On DelayTime Rise Time Turn-Off DelayTime Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c c VDD=V ID=4.5 VGS=V RGEN= ohm VDS=48V,ID=4.5,VGS=V VDS=48V,ID=4.5, VGS=V DRIN-SOURCE DIODE CHRCTERISTICS ND MXIMUM RTINGS VSD Diode Forward Voltage VGS=V,IS=.7.8. V Notes a.surface Mounted on FR4 Board,t < _ sec. b.pulse Test:Pulse Width < _ us, Duty Cycle < _ %. c.guaranteed by design, not subject to production testing. VDS=48V,ID=4.5,VGS=4.5V 8 4 4 8 8 9. 4.9 pr,7,
ID, Drain Current() 5 9 5 VGS=4.5V -55 C 5 C VGS=V VGS=4V VGS=.5V VGS=V.5..5..5...8..4. 4. 4.8 ID, Drain Current() 9 Tj=5 C VDS, Drain-to-Source Voltage(V) Figure. Output Characteristics VGS, Gate-to-Source Voltage(V) Figure. Trafer Characteristics 9. RDS(on)(m Ω) 75 45 5 VGS=4.5V VGS=V RDS(on), On-Resistance Normalized.8..4.. V GS=V ID=4.5 V GS=4.5V ID= 9 5 Tj( C) ID, Drain Current() Tj, Junction Temperature( C ) Figure. On-Resistance vs. Drain Current and Gate Voltage 5 5 75 5 5 Figure 4. On-Resistance Variation with Drain Current and Temperature Vth, Normalized Gate-Source Threshold Voltage.....9.8.7 VDS=VGS ID=5u. -5-5 5 5 75 5 5 BVDSS, Normalized Drain-Source Breakdown Voltage.5 ID=5u..5..95.9.85-5 -5 5 5 75 5 5 Tj, Junction Temperature( C ) Figure 5. Gate Threshold Variation with Temperature Tj, Junction Temperature( C ) Figure. Breakdown Voltage Variation with Temperature pr,7,
RDS(on)(m Ω) 8 5 9 75 C 5 C 5 C ID=4.5 4 8 Is, Source-drain current().. 5. 5 C 5 C 75 C....9..5 VGS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current C, Capacitance(pF) 8 Ciss 4 Coss Crss 5 5 5 VGS, Gate to Source Voltage(V) 8 4 VDS=48V ID=4.5 4 8 4 VDS, Drain-to-Source Voltage(V) Figure 9. Capacitance Qg, Total Gate Charge() Figure. Gate Charge Switching Time() Tr Tf VDS =V,ID=4.5 VGS=V Rg, Gate Resistance(Ω) Figure. switching characteristics ID, Drain Current() 5 RDS(ON) Limit. VGS=V Single Pulse T=5 C.. DC VDS, Drain-Source Voltage(V) Figure. Maximum Safe Operating rea s ms ms 4 pr,7,
Normalized Traient Thermal Resistance.5...5 t.. t. Single Pulse. R J (t)=r (t) * R J. R J=See Datasheet. TJM-T =PDM* R J (t) 4. Duty Cycle, D=t/t...... P DM Square Wave Pulse Duration(sec) Figure. Normalized Thermal Traient Impedance Curve pr,7, 5
PCKGE OUTLINE DIMENSIONS SO-8 D E e b H hx45 O L C SYMBOLS MILLIMETERS INCHES MIN MX MIN MX b.5..5..75.5..5.5.4.49..9..4. C D E.7 4.8.7.5 5. 4..7.89.4..97.57 e.7 REF..5 BSC H 5.8..8.44 L.4.7..5 8 8 h.5.5.. pr,7,
SO-8 Carrier Tape SO-8 Tape and Reel Data P D P B E E E D P T TERMINL NUMBER SECTION - unit: PCKGE SOP 8N 5 K FEEDING DIRECTION B K D D E E E P P P T.5 5.5..5.55. (MIN) +..75 5.5.5..... -. 8.. 4...... SO-8 Reel W G S V M N K R H UNIT: TPE SIZE REEL SIZE W M N W W H K S G R V.5.4 +..8 -.4.75 +.5..5 7 pr,7,