AOZ8211 One-line TVS Diode

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One-line TVS Diode General Description The OZ8211 is a one-line transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and SD.

1 One-line TVS Diode General Description The OZ8211 is a one-line transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and SD. This device incorporates one TVS diode in an ultra-small SOD923 package. During transient conditions, the one-line TVS diode directs the transient to ground. It may be used to meet the SD immunity requirements of IC , Level 4 (±15kV air, ±8kV contact discharge). The OZ8211 comes in an RoHS compliant SOD923 package and is rated over a -4 C to +85 C ambient temperature range. The ultra-small 1. x.6 x.4mm SOD923 package makes it ideal for applications where PCB space is a premium. The small size and high SD protection makes it ideal for protecting voltage sensitive electronics from high transient conditions and SD. Features SD protection for high-speed data lines: xceeds: IC (SD) ±28kV (air), ±28kV (contact) Human Body Model (HBM) ±3kV Small package saves board space Low insertion loss Low clamping voltage Low operating voltage: and pplications Portable handheld devices Keypads, data lines, buttons Notebook computers Digital Cameras Portable GPS MP3 players Typical pplication Pin Configuration Signal Line Cathode 1 2 node Unidirection Protection of Single Line Rev. 2.5 January 29 Page 1 of 6

2 Ordering Information Part Number mbient Temperature Range Package nvironmental OZ8211NI-5L -4 C to +85 C SOD923 RoHS Compliant OZ8211NI-12L Green Product ll OS products are offered in packages with Pb-free plating and compliant to RoHS standards. Parts marked as Green Products (with L suffix) use reduced levels of Halogens, and are also RoHS compliant. Please visit for additional information. bsolute Maximum Ratings xceeding the bsolute Maximum ratings may damage the device. Parameter Rating Peak Pulse Current (I PP ), t P = 8/2µs Storage Temperature (T S ) SD Rating per IC61-4-2, Contact (1) SD Rating per IC61-4-2, ir (1) SD Rating per Human Body Model (2) 5-65 C to +15 C ±28kV ±28kV ±3kV Notes: 1. IC discharge with C Discharge = 15pF, R Discharge = 33Ω. 2. Human Body Discharge per MIL-STD-883, Method 315 C Discharge = 1pF, R Discharge = 1.5kΩ. Maximum Operating Ratings Parameter Rating Junction Temperature (T J ) -4 C to +85 C lectrical Characteristics T = 25 C unless otherwise specified. Symbol Parameter Symbol Parameter I PP Maximum Reverse Peak Pulse Current I T Test Current V CL Clamping I PP I F Forward Current V RWM Working Peak Reverse Voltage V F Forward I F I R Maximum Reverse Leakage V RWM P pk Peak Power Dissipation V BR Breakdown I T C J V R = and f = 1MHz lectrical Characteristics T = 25 C unless otherwise noted, V F I F = 1m for all types Device Device Marking V RWM (V) V BR (V) I R (µ) V F (V) Typ. V CL I PP = 1 I PP = 5 I PP = 12 C J (pf) Typ. OZ8211NI-5L C OZ8211NI-12L D Rev. 2.5 January 29 Page 2 of 6

3 Typical Performance Characteristics 25 Clamping Voltage vs. Peak Pulse Current (tperiod = 1ns, tr = 1ns) 12 Forward Voltage vs. Forward Current (tperiod = 1ns, tr = 1ns) Clamping Voltage, VCL (V) Forward Voltage (V) Peak Pulse Current, I PP () Forward Current () 5 I/O Gnd Insertion Loss (S21) vs. Frequency (Vp = 3.3V) 3 Capacitance vs. Reverse Bias Insertion Loss (db) Capacitance (pf) Frequency (MHz) Reverse Bias (Volts) 2 nalog Crosstalk (I/O I/O) vs. Frequency Insertion Loss (db) Frequency (MHz) Rev. 2.5 January 29 Page 3 of 6

4 Package Dimensions, SOD923 1 Cathode Mark L b D B aaa C B TOP VIW BOTTOM VIW View C C Seating Plane 1 SID VIW c VIW C.4 RCOMMNDD LND PTTRN.9 UNIT: mm.3 Dimensions in millimeters Symbols 1 b c D 1 L aaa Min Nom Dimensions in inches Symbols 1 b c D 1 L aaa Min Nom Notes: 1. ll dimensions are in millimeters. 2. Dimensions are inclusive of plating. 3. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. 4. The cathode mark is optional. 5. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 3 mils each. Rev. 2.5 January 29 Page 4 of 6

5 Tape and Reel Dimensions, SOD923 Tape P1 P2 D D1 1 B - B Section K 2 B Max 5 P Max 5 - Section Feeding Direction UNIT: mm Package B K D D1 1 2 P P1 P2 T SOD ø1.5 ø.5 8. ± ±.2 Reel 2xR6 3 6 W1 S1 S 2xR K K1 M N ø Back View Section: B - B W H H1 rbor Hole Detail Barcode Label Front View UNIT: mm Tape Size Reel Size M N W W1 H H1 K K1 S S1 8mm ø18 ø177.7 ±.5 ø54.4 ± ± / -. ø13.2 ±.3 ø Leader/Trailer and Orientation Cathode Trailer Tape 3mm min. Components Tape Orientation in Pocket Leader Tape 5mm min. Rev. 2.5 January 29 Page 5 of 6

6 Part Marking Cathode Mark C M Product Number Code C = OZ8211NI-5L D = OZ8211NI-12L Date Code This data sheet contains preliminary data; supplementary data may be published at a later date. lpha & Omega Semiconductor reserves the right to make changes at any time without notice. LIF SUPPORT POLICY LPH & OMG SMICONDUCTOR PRODUCTS R NOT UTHORIZD FOR US S CRITICL COMPONNTS IN LIF SUPPORT DVICS OR SYSTMS. s used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Rev. 2.5 January 29 Page 6 of 6

AOZ8231A. One-line Bi-directional TVS Diode. General Description. Features. Applications

AOZ8231A. One-line Bi-directional TVS Diode. General Description. Features. Applications One-line Bi-directional TVS Diode General Description The OZ8231 is a one-line bi-directional transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions