DATA SHEET ELECTROSTATIC DISCHARGE PROTECTION DEVICES INDUSTRIAL / CONSUMER LBD8CXXL01 series
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1 Product specification ecember 18, 18 V. ATA SHEET ELECTROSTATIC ISCHARGE PROTECTION EVICES INUSTRIAL / CONSUMER series RoHS compliant & Halogen free
2 2 Electrostatic ischarged Protection evices (ES) ata Sheet escription The LB8C series of Transient Voltage Suppressors are designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computer, and PAs. They offer superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs. They are designed to protect sensitive semiconductor components from damage or upset due to electrostatic discharge (ES), lightning, electrical fast transients (EFT), and cable discharge events (CE). Features IEC6-4-2 ES 3KV Air, 3KV contact compliance SO882 surface mount package Working voltage: V Low leakage current Low operating and clamping voltages Solid-state silicon avalanche technology RoHS compliant Solder reflow temperature: Pure Tin-Sn, 26~27 Flammability rating UL 94V- Meets MSL level 1, per J-ST- 1 2 Pin Configuration Applications Cellular Handsets & Accessories Notebooks & Handhelds igital Cameras Personal igital Assistants (PAs) Portable Instrumentation MP3 Players Maximum Ratings Rating Symbol Value Unit ES voltage (Contact discharge) V ES ES voltage (Air discharge) ±3 ±3 kv Lead soldering temperature T L 26 Storage & operating temperature range T STG,T J -~+
3 3 Electrical Characteristics (T J =2 ) LB8CL1 (Marking: B) Parameter Symbol Condition Min. Typ. Max. Unit Reverse stand-off voltage V RWM V Reverse breakdown voltage V BR I BR =1mA. V Reverse leakage current I R V R =V 1 μa Clamping voltage (tp=8/μs) V C I PP =1A 8. V Clamping voltage (tp=8/μs) V C I PP =A 18 V Off state junction capacitance C J Vdc,f=1MHz pf Typical Characteristics Curves Figure 1. Pulse Waveforms Figure 2. Clamping Voltage vs. Peak Pulse Current % of Peak Power Current t r Peak value Ipp Waveform Parameters: t r =8µs t d =µs t d =t I PP /2 Clamping Voltage (V) 2 1 Waveform Parameters: t r =8µs t b =µs t-time (μs) I PP -Peak Pulse Current (A) Figure 3. Capacitance vs. Reverse Voltage 2 F=1MHz Junction Capacitance (pf) Reverse Voltage (V)
4 4 Recommended Soldering Conditions Reflow Soldering T P Ramp-up t P Critical Zone T L to T P T L T S max t L Temperature T S min t S Preheat Ramp-down 2 t 2 to Peak Time Recommended Conditions Profile Feature Average ramp-up rate (T L to T P ) Preheat -Temperature Min (T S min ) -Temperature Max (T S max ) -Time (min to max) (ts) Pb-Free Assembly 3 /second max seconds T S max to T L -Ramp-up Rate Time maintained above: -Temperature (T L ) -Time (t L ) 3 /second max seconds Peak Temperature (T P ) 26 Time within of actual Peak Temperature (t P ) Ramp-down Rate Time 2 to Peak Temperature -4 seconds 6 /second max. 8 minutes max.
5 imensions (SO882) A imension (mm) Symbol Millimeters Inches B C Min. Max. Min. Max. Top View Side View A E.3. B C F Bottom View Recommended Soldering Pad Layout.4.18 E F Packaging Tape Symbol imension (mm) W 8.±.3 ø P P1 P2 K P 4.±. P1 2.±. E P2 2.±. Φ1.±. F W 1 Φ.4±. B E 1.7±. ø1 F 3.±. A t A.7±. B 1.1±. K.6±. t.±. Reel Φ328.± Φ14.4 W1. W1 Quantity: PCS
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