ESD9N12BA ESD9N12BA. Descriptions. Features. Applications. Order information. http//:

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1 1-Line, Bi-directional, Transient Voltage Suppressors http//: Descriptions The ES9N12BA is a TVS (Transient Voltage Suppressor) designed to protect sensitive electronic components which are connected to data and transmission lines from over-stress caused by ESD (Electrostatic Discharge), EFT (Electrical Fast Transients) and lightning. The may be used to provide ESD protection up to ±3kV (contact discharge) according to IEC6-4-2, and withstand peak pulse current up to 5.5A (8/μs) according to IEC The is available in DFN6-2L package. Standard products are Pb-free and Halogen-free. Features Stand-off voltage: ±12V Max Transient protection for each line according to IEC6-4-2 (ESD): ±3kV (contact discharge) IEC6-4-5 (surge): 5.5A (8/μs) Capacitance: C J = 27pF typ. Ultra-low leakage current: I R =.1nA typ. Low clamping voltage: V CL = V I PP = A (TLP) Solid-state silicon technology DFN6-2L (Bottom View) Pin1 Pin2 Circuit diagram Pin1 * A A = Device code * = Month code ( A~Z) Marking (Top View) Pin2 Applications Computers and peripherals Cellular handsets Portable Electronics Notebooks Order information Device Package Shipping -2/TR DFN6-2L /Tape&Reel Will Semiconductor Ltd. 1 Revision 1.3, /1/21

2 Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (t p = 8/μs) P pk 99 W Peak pulse current (t p = 8/μs) I PP 5.5 A ESD according to IEC6-4-2 air discharge V ESD ESD according to IEC6-4-2 contact discharge ±3 Operation junction temperature T J 125 Lead temperature T L 26 Storage temperature T STG -55~15 ±3 kv Electrical characteristics (T A =25, unless otherwise noted) Parameter Symbol Condition Min. Typ. Max. Unit Stand-off voltage V RWM ±12 V Reverse leakage current I R V RWM = 12V.1 5 na Reverse breakdown voltage V BR I T = 1mA 13.5 V Clamping voltage 1) V CL I PP = A, t p = ns V Dynamic resistance 1) R DYN.35 Ω Clamping voltage 2) Junction capacitance V CL C J I PP = 1A, t p = 8/μs V I PP = 5.5A, t p = 8/μs V V R = V, f = 1MHz pf V R = 12V, f = 1MHz pf 1) TLP parameter: Z = 5Ω, t p = ns, t r = 2ns, averaging window from 6ns to 8ns. R DYN is calculated from 4A to A. 2) According to IEC Will Semiconductor Ltd. 2 Revision 1.3, /1/21

3 Typical characteristics (T A =25, unless otherwise noted) Peak pulse current (%) T Time (µs) T 1 T 2 Front time: T 1 = 1.25 T = 8µs Time to half-value: T 2 = µs 8/μs waveform per IEC6-4-5 Current (%) 9 3ns 6ns t t r =.7~1ns Time (ns) Contact discharge current waveform per IEC6-4-2 V C - Clamping voltage (V) Pulse waveform: t p = 8/µs I PP - Peak pulse current (A) Clamping voltage vs. Peak pulse current C J - Junction capacitance (pf) f = 1MHz V AC = 5mV V R - Reverse voltage (V) Capacitance vs. Reveres voltage Peak pulse power (W) 1 Pulse time (µs) Non-repetitive peak pulse power vs. Pulse time % of Rated power T A - Ambient temperature ( ) Power derating vs. Ambient temperature Will Semiconductor Ltd. 3 Revision 1.3, /1/21

4 ESD clamping (+8kV contact discharge per IEC6-4-2) ESD clamping (-8kV contact discharge per IEC6-4-2) TLP current (A) Z = 5Ω t r = 2ns t p = ns TLP voltage (V) TLP Measurement Will Semiconductor Ltd. 4 Revision 1.3, /1/21

5 Package outline dimensions DFN6-2L Top View Bottom View Side View Symbol Dimensions in millimeter Min. Typ. Max. A A A3.125 Ref. D E b L e.65 Typ. Recommend land pattern (Unit: mm) Note: This land pattern is for your reference only. Will Semiconductor Ltd. 5 Revision 1.3, /1/21