SEMINAR ON PERSPECTIVES OF NANOTECHNOLOGY FOR RF AND TERAHERTZ ELECTRONICS. February 1, 2013

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1 SEMINAR ON PERSPECTIVES OF NANOTECHNOLOGY FOR RF AND TERAHERTZ ELECTRONICS February 1, 2013 GuideMr.Harikrishnan A.IAsst ProfessorANJUSEMINAR MICHAEL ONPERSPECTIVES (NSAJEEC013) OF NANOTECHNOLOGY FOR February RF AND 1, 2013 TERAHERTZ 1 / 21 EL

2 CONTENTS INTRODUCTION NANOCARBON CNT-FET GRAPHENE FET TERAHERTZ ELECTRONICS PHIAR DEVICES CONCLUSION GuideMr.Harikrishnan A.IAsst ProfessorANJUSEMINAR MICHAEL ONPERSPECTIVES (NSAJEEC013) OF NANOTECHNOLOGY FOR February RF AND 1, 2013 TERAHERTZ 2 / 21 EL

3 INTRODUCTION Matter or structures at dimensions below 100 nm down to atomic dimensions of the order of 1 nm is called nano or nanoscale matter. Advances in nanotechnology have led to the development of nano RF or terahertz devices. GuideMr.Harikrishnan A.IAsst ProfessorANJUSEMINAR MICHAEL ONPERSPECTIVES (NSAJEEC013) OF NANOTECHNOLOGY FOR February RF AND 1, 2013 TERAHERTZ 3 / 21 EL

4 NANOTECHNOLOGY WITH NANOCARBON CNTs are used as electron emitters for field emission sources. High current output based on field emission in the nanocarbon structure in a vacuum environment. CNTs are also applicable in nonvacuum devices by mixing them with CL phosphors. GuideMr.Harikrishnan A.IAsst ProfessorANJUSEMINAR MICHAEL ONPERSPECTIVES (NSAJEEC013) OF NANOTECHNOLOGY FOR February RF AND 1, 2013 TERAHERTZ 4 / 21 EL

5 APPLICATIONS OF CNT CNTs are used for CNT network transistors. CNTs are also used in nanomechanics and its applications based on their mechanical behavior. Used as nanoantennas for RF application, nanoswitched DRAM cells, and nanosensors. They are excellent electrical conductors and could be used in nanoscale electronic devices. GuideMr.Harikrishnan A.IAsst ProfessorANJUSEMINAR MICHAEL ONPERSPECTIVES (NSAJEEC013) OF NANOTECHNOLOGY FOR February RF AND 1, 2013 TERAHERTZ 5 / 21 EL

6 CNT-FET A carbon nanotube field-effect transistor (CNTFET). It refers to a field-effect transistor that utilizes a single carbon nanotube or an array of carbon nanotubes as the channel material instead of bulk silicon in the traditional MOSFET structure. First demonstrated in 1998, there have been major developments in CNTFETs. GuideMr.Harikrishnan A.IAsst ProfessorANJUSEMINAR MICHAEL ONPERSPECTIVES (NSAJEEC013) OF NANOTECHNOLOGY FOR February RF AND 1, 2013 TERAHERTZ 6 / 21 EL

7 SCHEMATIC OF CNT-FET GuideMr.Harikrishnan A.IAsst ProfessorANJUSEMINAR MICHAEL ONPERSPECTIVES (NSAJEEC013) OF NANOTECHNOLOGY FOR February RF AND 1, 2013 TERAHERTZ 7 / 21 EL

8 GRAPHENE FET Graphene is the mother material of CNTs. Graphene is a single layer of sp2-bonded carbon atoms. Since graphene is a 2-D material, it is easier to fabricate a graphene FET using a conventional top-down approach, and to obtain a large channel width resulting in high channel conductance. The most interesting electrical properties are high electron mobility and ballistic transport of charge carriers. GuideMr.Harikrishnan A.IAsst ProfessorANJUSEMINAR MICHAEL ONPERSPECTIVES (NSAJEEC013) OF NANOTECHNOLOGY FOR February RF AND 1, 2013 TERAHERTZ 8 / 21 EL

9 Graphene is a zero bandgap semiconductor or semimetal. The zero-bandgap means that graphene cannot be switched from conductive state to non-conductive state. The most studied graphene transistor today is the graphene field-effect transistor (GFET). GuideMr.Harikrishnan A.IAsst ProfessorANJUSEMINAR MICHAEL ONPERSPECTIVES (NSAJEEC013) OF NANOTECHNOLOGY FOR February RF AND 1, 2013 TERAHERTZ 9 / 21 EL

10 NANORADIO A nanotube can function as an integrated radio receiver, a so-called all-in-one nanotube radio. Currently only receivers have been developed and they are structured around a carbon nanotube. The two components in a nanotube radio are amplifier and demodulator, involve the field-emission current. GuideMr.Harikrishnan A.IAsst ProfessorANJUSEMINAR MICHAEL ONPERSPECTIVES (NSAJEEC013) OF NANOTECHNOLOGYFebruary FOR RF 1, AND 2013TERAHERTZ 10 / 21 EL

11 GuideMr.Harikrishnan A.IAsst ProfessorANJUSEMINAR MICHAEL ONPERSPECTIVES (NSAJEEC013) OF NANOTECHNOLOGYFebruary FOR RF 1, AND 2013TERAHERTZ 11 / 21 EL

12 TERAHERTZ ELECTRONICS The terahertz region -nominally THz. A new technology that extends the range of electronics into the terahertz since photonic devices falter below 10 THz. Phiar has designed detectors and transistors in the terahertz region. Phiars patented double-insulator structures produce high performance. GuideMr.Harikrishnan A.IAsst ProfessorANJUSEMINAR MICHAEL ONPERSPECTIVES (NSAJEEC013) OF NANOTECHNOLOGYFebruary FOR RF 1, AND 2013TERAHERTZ 12 / 21 EL

13 PHIAR DEVICES Made entirely of thin film materials. Complete integrability. Low cost. Compatibility with CMOS circuitry. GuideMr.Harikrishnan A.IAsst ProfessorANJUSEMINAR MICHAEL ONPERSPECTIVES (NSAJEEC013) OF NANOTECHNOLOGYFebruary FOR RF 1, AND 2013TERAHERTZ / 21 EL

14 PHIARS PATENTED MIIM TUNNELING DIODE Phiars patented MIIM tunneling diode. High conductivity and high nonlinearity may be obtained simultaneously. Efficient detector capable of operating with carrier frequencies well above 10 THz. GuideMr.Harikrishnan A.IAsst ProfessorANJUSEMINAR MICHAEL ONPERSPECTIVES (NSAJEEC013) OF NANOTECHNOLOGYFebruary FOR RF 1, AND 2013TERAHERTZ 14 / 21 EL

15 TERAHERTZ APPLICATIONS Terahertz Interconnects Terahertz Imaging RF-on-Flex Low-Cost, High-Speed Electronics GuideMr.Harikrishnan A.IAsst ProfessorANJUSEMINAR MICHAEL ONPERSPECTIVES (NSAJEEC013) OF NANOTECHNOLOGYFebruary FOR RF 1, AND 2013TERAHERTZ 15 / 21 EL

16 TERAHERTZ INTERCONNECTS Advantages of terahertz-wave frequencies. Easy alignment No optical feedthroughs No wires GuideMr.Harikrishnan A.IAsst ProfessorANJUSEMINAR MICHAEL ONPERSPECTIVES (NSAJEEC013) OF NANOTECHNOLOGYFebruary FOR RF 1, AND 2013TERAHERTZ 16 / 21 EL

17 TERAHERTZ DETECTORS Tiny antenna connected to a MIIM diode. Terahertz detectors offer: 1.Ultra-high speed 2.Low voltage 3.Wide operating temperature range 4.Manufacturability 5.Reliability GuideMr.Harikrishnan A.IAsst ProfessorANJUSEMINAR MICHAEL ONPERSPECTIVES (NSAJEEC013) OF NANOTECHNOLOGYFebruary FOR RF 1, AND 2013TERAHERTZ 17 / 21 EL

18 ADVANTAGES OF TERAHERTZ-WAVE FREQUENCIES Sufficiently high bit rates to carry at least 10 Gb/s. Sufficiently low frequency waves to penetrate chip packages. Large collection area for ease of alignment. Efficient generation and detection of terahertz waves using Phiar components. Circumventing need for expensive high-frequency RF circuit boards. GuideMr.Harikrishnan A.IAsst ProfessorANJUSEMINAR MICHAEL ONPERSPECTIVES (NSAJEEC013) OF NANOTECHNOLOGYFebruary FOR RF 1, AND 2013TERAHERTZ 18 / 21 EL

19 CONCLUSION Significant changes like : In displays. In lighting. In nanoelectronics. Potential improvement using nanocarbons. GuideMr.Harikrishnan A.IAsst ProfessorANJUSEMINAR MICHAEL ONPERSPECTIVES (NSAJEEC013) OF NANOTECHNOLOGYFebruary FOR RF 1, AND 2013TERAHERTZ 19 / 21 EL

20 Section no.8 REFERENCES SeungNam Cha, Jung Han Choi, Chan Wook Baik, Hyung Bin Sohn, Joonhyock Choi, Ohyun Kim, and Jong Min Kim Peter Russer, Fellow, IEEE, and Johannes A. Russer, Member, IEEE Gabor L. Hornyak, John J. Moore, Harry F. Tibbals, and Joydeep Dutta GuideMr.Harikrishnan A.IAsst ProfessorANJUSEMINAR MICHAEL ONPERSPECTIVES (NSAJEEC013) OF NANOTECHNOLOGYFebruary FOR RF 1, AND 2013TERAHERTZ / 21 EL

21 Section no.8 THANK YOU GuideMr.Harikrishnan A.IAsst ProfessorANJUSEMINAR MICHAEL ONPERSPECTIVES (NSAJEEC013) OF NANOTECHNOLOGYFebruary FOR RF 1, AND 2013TERAHERTZ 21 / 21 EL