A Fully-Integrated 77-GHz FMCW Radar Transceiver in 65-nm CMOS Technology Jri Lee, Member, IEEE, Yi-An Li, Meng-Hsiung Hung, and Shih-Jou Huang

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1 2746 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 45, NO. 12, DECEMBER 2010 A Fully-Integrated 77-GHz FMCW Radar Transceiver in 65-nm CMOS Technology Jri Lee, Member, IEEE, Yi-An Li, Meng-Hsiung Hung, and Shih-Jou Huang Abstract A fully-integrated FMCW radar system for automotive applications operating at 77 GHz has been proposed. Utilizing a fractional- synthesizer as the FMCW generator, the transmitter linearly modulates the carrier frequency across a range of 700 MHz. The receiver together with an external baseband processor detects the distance and relative speed by conducting an FFT-based algorithm. Millimeter-wave PA and LNA are incorporated on chip, providing sufficient gain, bandwidth, and sensitivity. Fabricated in 65-nm CMOS technology, this prototype provides a maximum detectable distance of 106 meters for a mid-size car while consuming 243 mw from a 1.2-V supply. Index Terms 77 GHz, fast Fourier transform (FFT), fractional- synthesizer, frequency modulated continuous-wave (FMCW) radar, low-noise amplifier (LNA), power amplifier (PA). I. INTRODUCTION T HE emerging automotive radar systems have been developed over the past years to create a more secure and more comfortable driving environment. Up to now, quite a few standards have been established for different applications (Fig. 1). For example, short-range ( m) radars are adopted to provide parking assistance or to prevent side-crash, which utilizes pulse-based modulation with a wide bandwidth of 7 GHz. Because of the short distance, it must provide a wide azimuth angle and a fine resolution ( cm) [1]. Used in the Stop-and-Go system, 1 the mid-range radars usually operate at 24-GHz band to cover a distance of m with an angle of [2], [3]. The 77-GHz band, on the other hand, has been dedicated to long-range radars, e.g., the adaptive cruise control (ACC) system, which basically detects the distance and the relative speed of the vehicles in front so as to perform a real-time response by means of the braking system or other protective mechanism. It must cover a range up to meters [4]. At the speed of 110 km/h, saving one second response time is equivalent to extending over 30 meters for braking. With proper operation, such an anti-collision system can reduce a great amount of casualties in traffic accident. The 77-GHz radar presents significant advantages over microwave (e.g., 24-GHz) radars. The more compact size Manuscript received April 06, 2010; revised June 29, 2010; accepted August 12, Date of publication October 28, 2010; date of current version December 03, This paper was approved by Guest Editor Ranjit Gharpurey. The authors are with the Electrical Engineering Department, National Taiwan University, Taipei, Taiwan ( jrilee@cc.ee.ntu.edu.tw). Color versions of one or more of the figures in this paper are available online at Digital Object Identifier /JSSC A cruise control system that could maintain a safe driving distance from the vehicle ahead while in heavy traffic. (especially in antenna design) makes it suitable for further integration. The associated narrow-beamwidth requirement fits in with long-distance applications. For example, high-gain narrow-beamwidth antennas such as horn or dish can be used. Also, as compared with the laser radar, which is subject to disturbance by rain or mist, millimeter wave reveals better environmental resistance. However, even with modern technology, 77-GHz radar systems are still very expensive and can only be applied to luxury cars. It is because in conventional approaches, engineers need to collect individual mm-wave circuits and put them together as a module, rather than realizing a fully-integrated circuit in one chip. It inevitably suffers from high cost and low yield. Today, the trend to popularize this high-end technique puts more pressure on cost reduction. Research on 77-GHz automotive radars has been extensively conducted over the past years. For example, [5] and [6] provide single-chip transceivers and transceiver arrays in SiGe BiCMOS technology, respectively, and 77-GHz transceivers are also demonstrated in CMOS [7], [8]. Even so, highly-integrated 77-GHz radar transceivers have never been realized in CMOS before. Unlike compound technologies, CMOS manifests itself in its low cost, high yield, and potential of highly integration, and it is of course desirable to implement long range radar transceivers in CMOS. In this paper, we propose a solution that integrates the whole transceiver in single chip, which along with antennas and baseband processor forms a complete system. It substantially reduces the cost and increases the reliability. Note that [9] only accomplishes the transmit part. Whole-system assembly requires much more effort than building up blocks. Before looking at design details, we need to evaluate the challenges of realizing such a high-frequency system. It is wellknown that the returned power loss of a radar system is given by where denote the transmitted and received power, the gain of antennas, the radar cross section, the wavelength, and the distance [10]. At 77 GHz, the reflected wave would be attenuated by approximately 150 db at a distance of 100 meters. Here, the radar cross section is defined as where denotes the incident power density measured at the target, and the scattered power density seen at a distance (1) (2) /$ IEEE

2 LEE et al.: A FULLY-INTEGRATED 77-GHz FMCW RADAR TRANSCEIVER IN 65-nm CMOS TECHNOLOGY 2747 Fig. 1. Classification of automotive radar systems. away from the target. For a mid-size automotive, m [11]. In the receive side, the lowest detectable power level can be expressed as [10] (3) Fig. 2. Performance analysis of CMOS mm-wave circuits: (a) P power gain and (c) noise figure of LNAs. of PAs, (b) where denotes the overall receiver noise figure and the fast Fourier transform (FFT) resolution bandwidth. Here we assume the intermediate frequency (IF) of the FMCW radar is calculated by doing FFT. In radar systems, a detectable signal needs to present a signal-to-noise ratio (SNR) higher than 16 db [10]. Considering 1-kHz FFT bandwidth, and approximately 28-dB total noise figure (, obtained from simulation), we can calculate the minimum detectable power level as around dbm. Compared with standard 2.4-GHz transceivers (e.g., Bluetooth [12], which have RF input sensitivity of dbm), the receiver here must deal with even weaker signals. Meanwhile, to reach a longer distance, it is desirable to suppress as much as possible, which in turn requires a high-gain low-noise amplifier (LNA). To estimate the minimum required output power in the transmit side,wehave where represents the receiver (Rx) sensitivity, the antenna gain. Suppose each antenna contributes 20-dBi gain, we obtain that the power amplifier (PA) in the transmitter (Tx) must deliver at least 10 dbm of power for a 100-m ranging distance. In other words, high output power PA and high-gain antennas are essential. The 20-dBi antenna gain can be achieved by some specific structures. So far, horn and dish antennas still prove to be the most suitable structures because they concentrate radiation energy efficiently. As will be discussed in Section VI, planar antennas such as patch arrays may achieve similar performance as well. The interconnection between chip and antenna is another issue, since the signal at 77 GHz can get attenuated significantly by travelling through only a small piece of wire. In our prototype, the lengths of the bonding wires are minimized to about m. In advanced CMOS technologies, the millimeter-wave (mmwave) PA and LNA designs become applicable. However, the (4) design margins are still quite small. To be more specific, we can analyze the performance of state-of-the-art PAs and LNAs, and predict their output saturation power (, for PAs) and power gain (for LNAs) at 77 GHz by regression. As illustrated in Fig. 2(a) and (b), they are approximately 7.5 dbm and 11 db. For the radar to function properly, we need a PA with of at least 10 dbm and an LNA with -db gain and -db NF. Thus, it is necessary to adopt modern mm-wave circuit designs so as to achieve the required performance. Block optimization and integration technique are equally important. Similarly, the noise figure of LNAs must be kept below 10 db as the intersection point is about 7.5 db [Fig. 2(c)]. Note that the down-conversion mixer and IF amplifier contribute significant noise figure as well. In architecture level, conventional structures tend to use an integer- phase-locked loop (PLL) with a programmable direct digital frequency synthesizer (DDFS) as the reference input [27]. The frequency modulation is accomplished by changing the input reference. This approach, however, suffers from severe power and area penalties, primarily because the DDFS may need high-resolution digital-to-analog converters (DACs) and large read-only memory (ROM) tables to achieve fine frequency tuning. The linearity of modulated frequency is determined by that of the DDFS, which may undergo inaccuracy of frequency chirping. In our design, we remove the DDFS entirely and incorporate a fractional- PLL instead. The frequency modulation is therefore achieved by changing the divide modulus. We integrate the FMCW generator and the radio frequency (RF) front-end in one chip, and have it co-designed with the interconnection to antennas. Together with signal processor realized in a field programmable gate array (FPGA), the FMCW radar system is capable of detecting multiple objects and exhibiting their positions and speeds in real time. This paper is organized as follows. Section II briefly describes the FMCW radar theory. Section III presents the transceiver architecture, revealing system level considerations. Section IV

3 2748 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 45, NO. 12, DECEMBER 2010 Fig. 3. FMCW radar operation for (a) general case, (b) longest distance, (c) highest speed. Fig. 4. (a) FMCW radar system architecture, (b) triangular frequency modulation, (c) loop bandwidth selection. discusses building block designs, and a complete testing result is summarized in Section V. Consideration for future work is discussed in Section VI. Finally, Section VII concludes this work. II. FMCW RADAR An FMCW radar transmits a continuous wave, which is triangularly modulated in frequency, and receives the wave reflected from objects. As can be illustrated in Fig. 3(a), for a moving target, the received frequency would be shifted (i.e., Doppler shift), resulting in two different offset frequencies and for the falling and rising ramps. Denoting the modulation range and period as and, respectively, we can derive the distance and the relative velocity as (5) (6) where represents the center frequency and the speed of light. In this design, we have MHz, and msec, leading to a ranging resolution of approximately 21.4 cm. Here, we assume and are obtained by counting their cycles, which must be integers in each period. Since the detectable offset frequencies need to be counted at least once in each ramp, we conclude that the minimum (and ) is equal to. By the same token, the lowest difference between the two offset frequencies is equal to khz. It translates to a speed resolution of, which is equal to 4.7 km/h. For automotive application, these resolutions are sufficient in most cases. It is also interesting to look into the maximum ranging limits of such an FMCW radar. For a stationary object standing very far away from the detector, the two sawtooth waveforms become apart from each other. This extreme case is shown in Fig. 3(b), where. Such a condition corresponds to a distance of km, given that the very unstable and (only appear for a very short period of time) can be obtained. Similarly, the maximum detectable speed can be calculated as illustrated in Fig. 3(c). Here, one of the offset frequencies drops to zero under this circumstance. The maximum detectable speed is therefore given by, which is a function of distance.for m, the highest detectable speed is about 2182 km/h. Since we are looking at distance and speed 2 3 orders less than the extreme cases, the FMCW operation here is quite robust. III. TRANSCEIVER ARCHITECTURE The transceiver architecture is illustrated in Fig. 4(a). It contains an RF front-end (PA, LNA, and mixer), two high-gain antennas, an FMCW generator (basically a fractional- synthesizer), and an FPGA-based signal processor. By tuning the divide modulus, the full-rate VCO delivers FMCW carrier signal around 77 GHz directly to the PA, the mixer, and the first divider. One important advantage of this structure is that it requires no frequency doublers or triplers, simplifying the circuit design by eliminating lots of mm-wave blocks. The reference clock is set to about 700 MHz, created by an external

4 LEE et al.: A FULLY-INTEGRATED 77-GHz FMCW RADAR TRANSCEIVER IN 65-nm CMOS TECHNOLOGY 2749 PLL with a crystal oscillator (50 MHz) for simple implementation. If necessary, this low-speed PLL can be further integrated into the transceiver. A 16-bit - modulator produces a 3-bit modulation signal for the divider, which follows the 2nd divider. Note that the power consumption of this architecture is at least 2 orders less than that of the DDFS version. The full-rate clock is amplified by the PA and coupled to the antenna directly. In the receiver path, another antenna captures the reflected signal. After the LNA and mixer, we obtain the IF signal and have it digitized by means of an external analog-to-digital converter (ADC) before sending it to the digital signal processor (DSP). The ADC provides 12-bit output with sampling rate of 3 MSample/s. Again, if necessary, it can be easily included in the main chip. Since the IF is quite low, the ADC power consumption can be kept less than 1 mw [28]. An FFT algorithm is implemented in the FPGA to calculate the distance and speed, which can track up to 5 objects simultaneously. In order to achieve the best frequency resolution, the FFT sampling time should be as large as to fully utilize the information for IF frequency estimation at each and interval. However, since the number of FFT points are usually a power of 2, the FFT sampling time here may be slightly smaller than if the sample rate is pre-selected. In this design, we choose a 2048-point FFT with 3-MSample/s sampling rate, leading to an FFT sampling time as Fig. 5. (a) VCO and its tuning range, (b) 1st frequency divider stage. (7) Equation (7) corresponds to 1.46-kHz frequency resolution. It is also important to look at the modulation mechanism. As shown in Fig. 4(b), the ramp is composed of 8192 steps with stepping rate of about 10.9 MHz. Note that the stepping is accomplished by using the output, which facilitates the synchronization between DSP (in FPGA) and the modulation logics (on chip). The - resolution is thus given by In other words, each step corresponds to 2 LSBs. The loop bandwidth of the frequency synthesizer is of great concern as well. In order to achieve a linear triangular profile with steep turn-around points, the bandwidth must be much greater than the modulation frequency, which is 0.67 khz, and less than the stepping rate, which is 10.9 MHz [Fig. 4(c)]. In this design, the loop bandwidth is set to be 1 MHz as an optimal value. Other issues may affect the transceiver performance and need to be considered carefully. For example, to extract and correctly, the logics on the board and the chip must be synchronized by the same reset and clock signals. Adaptability is important as well. Parameters such as and had better be made programmable to meet different standards. (8) Fig GHz frequency divider. IV. BUILDING BLOCKS In this section, we introduce circuit details of building blocks and their design considerations. A. VCO and Frequency Dividers Fig. 5(a) depicts the 77-GHz VCO design. It is implemented as a standard tank structure with thick-oxide (5.6-nm) varactors to suppress the leakage. Simulation suggests a tuning range of about 1 GHz. To drive a large loading of 66 ff for the divider, the PA, and the mixer at 77 GHz, we employ a pseudo-differential tuned amplifier pair - as a buffer. It is also possible to incorporate a cascode structure to further isolate the VCO. However, in such a low-supply design, the buffer s output swing would be somewhat degraded, if another deck of devices were added. The parasitic capacitance introduced at internal nodes would cause significant loss as well. The first divider stage is realized as a direct injection-locked topology [Fig. 5(b)], where the injection signal is ac-coupled to the gate of the switch. The bias voltage affects the lock range significantly. Higher produces a larger lock range by degrading the tank, which in turn decreases the output swing. As can be clearly shown in Fig. 5(b), with input swing of 800 mv, the divider fails for V, where the equivalent

5 2750 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 45, NO. 12, DECEMBER 2010 Fig. 7. (a) Prescaler design, (b) 42=3 cell, (c) CML-to-CMOS converter. tank loss exceeds. Here, we choose V to arrive at a lock range of 4 GHz with sufficient design margin. Note that injection-locked dividers present much less kickback than their static counterparts. The second divider is implemented as a static topology with current-mode logic (CML) structure, class-ab biasing, and inductive peaking (Fig. 6) [29]. Simulation shows that for input swing of 260 mv ( dbm, single-endedly), the lock range is approximately equal to 26 GHz. The peaking inductors only give a mild bandwidth boost and contribute negligible influence on the static divider s behavior. The prescaler is illustrated in Fig. 7(a), which follows the design in [30]. Four cells are placed in cascade. This structure provides a simple yet robust operation. With the 4th control bit set to 1, the division range is given by. Different types of latches 2 are employed to minimize its power consumption while achieving high speed. Here, we map the 3-bit - output to the control bits so as to tune the divide modulus from 24 to 31 (the average divide ratio is about 27.5). For completeness, we plot the cell in Fig. 7(b). Once again, class-ab biasing technique [29] is applied to the first cell to help driving large loading at higher speed (19.25 GHz). A differential CML-to-CMOS converter is required between the 2nd and the 3rd cells, which is illustrated in Fig. 7(c). Note that we take advantage of the available differential clocks to relax the heavy loading. That is, both of the pseudo-differential inputs and in the 3rd cell are used to drive two latches for each. In 65-nm CMOS technology, the converter presents a -db bandwidth of 10.5 GHz while consuming only 2.2 mw of power. B. LNA and PA The LNA is realized as three identical gain stages [Fig. 8(a)]. Here, each stage contains a cascode structure, and conjugate matching networks are placed between stages. The on-chip 2 CML and true-single-phase clock (TSPC). Fig. 8. (a) Low-noise amplifier, (b) improvement of double-shield ground. transmission line design is not trivial at such a high frequency. For example, copper s skin depth is equal to 0.25 m at 77 GHz, whereas the thickness of M1 in 65-nm CMOS is only 0.18 m. To prevent significant leakage to the substrate, we put two layers of metal as the ground plane. Here, M1 and M2 are shunt through vias to form a thicker ground plane with no penetrating slot [31]. As demonstrated in Fig. 8(b), the LNA gain and noise figure are improved by at least 2 to 4 db by using this double-layered ground. Also, and are laid out with shared junction [32] to minimize the parasitic capacitance of the internal node. The layout for and is illustrated in Fig. 8(a) as well. Note that if source degeneration were used, the gain would be degraded by 2 3 db. Since the receiver s noise figure is primarily determined by the mixer and IF amplifier, it is good to keep the LNA in high gain region. The PA design is depicted in Fig. 9(a). It is a 5-stage structure in cascade with conjugate matching in between. Each stage is made of a single-stage class-a amplifier. Here, to improve stability, it is desirable to add local bypass, e.g., a capacitor, to the supply. However, this bypass capacitor can never be large (usually 1 2 pf) since it has to accommodate limited space between stages. As a result, the bypass impedance raises up to a higher

6 LEE et al.: A FULLY-INTEGRATED 77-GHz FMCW RADAR TRANSCEIVER IN 65-nm CMOS TECHNOLOGY 2751 Fig. 9. (a) Power amplifier, (b) impedance jz j and Q of bypass network as a function of frequency with parasitics considered. Fig. 10. (a) Mixer, (b) IF amplifier, (c) 16-bit 6-1 modulator. value at low frequencies, possibly introducing more noise coupling or even oscillation. To reduce the impedance and quality factor at low frequencies, we can introduce an additional - branch [33]. The overall impedance seen looking into the - - network is now given by (9) In our design, pf, pf, and, arriving at a zero at 1.6 GHz and two poles at dc and 8.2 GHz, respectively. Similarly, the equivalent of this bypass network is defined as (10) which must be low enough for any frequency. However, (9) and (10) are over simplified as they contain no parasitics. Fig. 9(b) reveals the simulated results with parasitic inductance and resistance taken into account. Note that we can not use - solely, otherwise the PA s gain will be degraded significantly (owing to ). Simulation suggests that this PA presents a gain higher than 13 db. The degeneration transmission lines are used here to improve stability and wideband matching. C. Mixer, IF Amplifier, and - Modulator The mixer design is shown in Fig. 10(a). In order to conform to the 1.2-V supply and ensure abrupt switching on and, we separate the gain and switching stages [34], i.e., a tuned amplifier couples its output to the common-source node of the switching pair -. A single-balanced structure is used to reduce the LO port loading. Since IF is less than LO frequency by approximately 5 orders of magnitude, the LO feedthrough can easily be eliminated. Note that if a double-balanced mixer were used, the LO port would present capacitive loading twice as large to the VCO and its buffer. Most RF current flows into Fig. 11. (a) Die photograph, (b) testing setup. the switching pair - rather than the tail current, since the latter presents an output impedance much greater than the impedance seen upwards. Parasitic capacitance associated with node is absorbed as part of the matching network. The mixer gain is estimated to be 5 db. The down-converted IF signal needs to be enlarged to at least 5 mv before it can be processed by the ADC. The IF amplifier is composed of 3 differential pairs and an offset compensation unit loaded to the first stage, which could neutralize any possible offset up to 300 mv [Fig. 10(b)]. Although the offset cancellation in this prototype is designed for manual tuning, 3 it could be easily modified as an automatic calibration scheme [35], [36]. The IF amplifier is capable of providing 16-dB gain. The 16-bit - modulator is illustrated in Fig. 10(c). Adopting standard MASH structure [37], this modulator is inherently stable. All the blocks are operated in pure digital mode. The 3-bit output (averagely equal to ) is produced by the -times carry overflow of the first accumulator in every cycles. Note that the carries of the second and the third accumulators do not affect the output average value due to the differentiators. Integrated with modulation control logics, the adders, delay cells, and other digital blocks are synthesized by Design Compiler and are placed-and-routed 3 In real measurement, the observed offset is very small and we do not need to tune it out manually.

7 2752 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 45, NO. 12, DECEMBER 2010 Fig. 12. Spectra of 77-GHz synthesizer: (a) integer-n, (b) fractional-n operation. (c) Phase noise plots under integer-n operation, (d) spread spectrum under frequency modulation. by Astro [38]. Guard rings made of n-well and p diffusion layer are placed around the - modulator to isolate the created digital noise. Fig. 13. FMCW modulation profile and accuracy. V. EXPERIMENTAL RESULTS The transceiver chip has been fabricated in 65-nm CMOS technology. Fig. 11(a) shows the die photo, which measures mm. The circuit (FPGA not included) consumes a total power of 243 mw, of which 73 mw dissipates in the frequency synthesizer, 115 mw in PA, 30 mw in LNA, and 25 mw in the mixer and buffers. The testing setup is also shown in Fig. 11(b). An external PLL (CDCE62002) [39] provides the 700 MHz reference clock, and an ADC (ADS7882) [39] digitizes the IF signal. Both of them can be further merged into the transceiver in future design. A low-cost FPGA evaluation board (Altera DE0 Board) [40] has been used for FFT calculation. The radar transceiver as well as individual building blocks are tested on a probe station. A fully-assembled module has also been implemented, whose link budget is degraded by about 12 db due to bonding wire loss and mismatch loss especially at transmitter output. We here summarize the measurement results obtained from probing as follows. Fig. 12(a) and (b) reveal the output spectra of the 77-GHz synthesizer under integer- and fractional- operation, suggesting phase noise of and dbc/hz at 1-MHz offset, respectively. The reference spurs are dbc and the fractional spurs dbc. Note that these spikes have little influence on the radar performance, because the fractional spurs vary all the time due to the modulated carrier frequency. In other words, after averaging no stationary spur can be created to cause false alarm. Phase noise plots are also depicted in Fig. 12(c). Here, the phase noise of the full-rate clock is not directly available due to our limited equipment [29]. We instead plot the phase noise of the divided-by-4 output along with that of the 700-MHz reference. The 19-GHz output reveals phase noise of dbc/hz at 1-MHz offset, demonstrating that the first two Fig. 14. LNA measurement: (a) S-parameters, (b) noise figure. Fig. 15. PA measurement: (a) S-parameters, (b) large signal performance.

8 LEE et al.: A FULLY-INTEGRATED 77-GHz FMCW RADAR TRANSCEIVER IN 65-nm CMOS TECHNOLOGY 2753 Fig. 16. (a) IF spectrum while detecting an object 102-m away, (b) link budget. TABLE I PERFORMANCE SUMMARY divider stages contribute negligible noise. It also follows the reference profile tightly until 100 khz offset. The integrated jitter from 100 Hz to 1 GHz is equal to 293 fs. The output spectrum under modulation is shown in Fig. 12(d), which presents a spreading range of 700 MHz. By using a standalone synthesizer, we can even record the triangular frequency profile as shown in Fig. 13. The root-meansquare (rms) frequency error including the turn-around points is less than 300 khz, which is superior to that of conventional DDFS-based transceivers by at least 1 order [27]. Note that the standalone synthesizer provides slightly lower modulation range, which is approximately 500 MHz. To verify the performance of each block, we have also tested the LNA and PA individually. Here, both small- and large-signal measurements are conducted. The LNA achieves 17.5-dB gain, 7.4-dB NF, -dbm, and -dbm at 77 GHz. Fig. 14 depicts the LNA S-parameter and NF around the band of interest. The PA reveals a peak gain of 13.7 db, with a -db bandwidth of 21.5 GHz, of 6.7 dbm, of 10.5 dbm and maximum PAE of 8.4% (Fig. 15). Fig. 16(a) shows the IF spectrum while detecting an object about m at 102 meters away. We can see an IF line of dbm at about 635 khz. Note that the undesired spur caused by stepping does not appear, since we choose a low IF and a high modulating resolution. It serves as another advantage as compared with other FMCW designs [27]. The link budget is illustrated in Fig. 16(b). For a mid-size car, the longest detectable distance is about 110 meters, which matches our measurement closely. Furthermore, the noise floor at the IF is about dbm, which implies that the total NF of the receiver is about 30 db. We have also verified the accuracy of this radar system, and shown in Fig. 17(a) and (b) are the results for distance and speed. A picture of this out-door measurement is also shown in Fig. 17(c). A mid-size car with cross-section area of 30 m

9 2754 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 45, NO. 12, DECEMBER 2010 Fig. 19. Photos of the 77-GHz radar system with integrated transceiver (chip) and on-board antennas. Fig. 17. Accuracy for (a) distance, (b) velocity measurements, (c) picture of measurement setup. Fig. 18. (a) patch array antenna, (b) its gain and bandwidth, (c) radiation pattern E- and H-planes. serves as a target, and accurate speed meters as well as longrange measuring tapes are used. The maximum detectable is 106 meters. Note that the rms error is less than the resolution in both cases here, demonstrating the accuracy of this work. Table I summarizes the overall performance, and compares this work with some other FMCW radar transceivers and front-ends previously published. Other 77-GHz circuits such as [42] and [43] can also be found in the literature. VI. FUTURE WORK The antenna is of great importance in a radar system and is worthy of further modification. As discussed in Section I, in order to reach a long distance, we need high-gain antennas such as horn or dish to concentrate the radiation energy. In such cases, signal at 77 GHz must be transformed from coplanar waveguide to rectangular waveguide mode, and vice versa. All of the mm-wave components (antennas, adaptors, etc) are very costly because they require delicate manufacture techniques and precise mechanical placement. A low-cost solution may be found if we use a patch antenna array. It is well known that a large antenna array could get a high gain by focusing the radiation energy. As demonstrated in Fig. 18, we design an 8 8 patch array on a commercially-available PC board, RO4003C [41], which occupies an area of approximately cm on a board with. Tree-structure corporate feeding paths guarantee that the overall radiation is constructive. Using 8 8 elements, we can achieve -dbi gain and -GHz bandwidth [Fig. 18(b)], quite close to the requirement of automotive FMCW radar systems. The radiation patterns for E- and H-planes are also shown in Fig. 18(c), revealing beamwidth of 10 and 9, respectively. A radar module incorporates 8 8 patch antenna arrays has been demonstrated in Fig. 19, which achieves a ranging distance of at least 40 meters in preliminary test. It is absolutely possible to extend this distance to over 100 meters by modifying the RF front-ends as well as the DSP baseband. VII. CONCLUSION A fully-integrated 77-GHz FMCW radar transceiver has been proposed in this paper. Utilizing fractional- synthesizer as an FMCW engine, we substantially reduce the complexity of the circuit and board designs. Significant power and area can be saved by this architecture, leading to a low-cost solution. Millimeter-wave front-end realized in CMOS technology has been demonstrated as well. With baseband processors and high-gain antennas included, this work provides a complete realization example, which reveals promising potential for future automotive applications. ACKNOWLEDGMENT The authors thank the TSMC University Shuttle Program for chip fabrication.

10 LEE et al.: A FULLY-INTEGRATED 77-GHz FMCW RADAR TRANSCEIVER IN 65-nm CMOS TECHNOLOGY 2755 REFERENCES [1] V. Jain et al., A GHz UWB pulse-radar receiver front-end in 0.18-m CMOS, IEEE Trans. Microw. Theory Tech., vol. 57, pp , Aug [2] R. Kulke et al., 24 GHz radar sensor integrates patch antenna and frontend module in single multilayer LTCC substrate, in Proc. Eur. Microelectronics and Packaging Conf., Jun. 2005, pp [3] T. H. Ho et al., A compact 24 GHz radar sensor for vehicle sidewaylooking applications, in Proc. Eur. Microwave Conf., Oct. 2005, pp [4] M. Schneider, Automotive radar Status and trends, in Proc. German Microwave Conf., Apr. 2005, pp [5] J. Hasch et al., 77 GHz radar transceiver with dual integrated antenna elements, in Proc. German Microwave Conf., Dec. 2010, pp [6] H. P. Forstner et al., A 77 GHz 4-channel automotive radar transceiver in SiGe, in RFIC Symp. Digest, Jun. 2008, pp [7] Y. Kawano et al., A 77 GHz transceiver in 90 nm CMOS, in IEEE Int. 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Solid-State Circuits, vol. 43, no. 5, pp , May [15] A. Komijani et al., A 24-GHz, +14:5-dBm fully-integrated power amplifier in 0.18 m CMOS, IEEE J. Solid-State Circuits, vol. 40, no. 9, pp , Sep [16] H. Shigematsu et al., Millimeter-wave CMOS circuit design, IEEE Trans. Microw. Theory Tech., vol. 53, pp , Feb [17] T. LaRocca et al., 60 GHz CMOS amplifiers using transformer-coupling and artificial dielectric differential transmission lines for compact design, IEEE J. Solid-State Circuits, vol. 44, no. 5, pp , May [18] T. Yao et al., Algorithmic design of CMOS LNAs and PAs for 60-GHz radio, IEEE J. Solid-State Circuits, vol. 42, no. 5, pp , May [19] T. Suzuki et al., 60 and 77 GHz power amplifiers in standard 90 nm CMOS, in IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, Feb. 2008, pp [20] M. Seo et al., A 1.1 V 150 GHz amplifier with 8 db gain and +6 dbm saturated output power in standard digital 65 nm CMOS using dummyprefilled microstrip lines, in Int.Solid-State Circuits Conf. Digest, Feb. 2009, pp [21] D. K. Shaeffer et al., A 1.5-V, 1.5-GHz CMOS low noise amplifier, IEEE J. Solid-State Circuits, vol. 32, no. 5, pp , May [22] A. Ismail et al., A 3 10-GHz low-noise amplifier with wideband LC-ladder matching network, IEEE J. Solid-State Circuits, vol. 39, no. 12, pp , Dec [23] E. Adabi et al., 30 GHz CMOS low noise amplifier, in RFIC Symp. Dig., Jun. 2007, pp [24] M. A. T. Sanduleanu et al., GHz low noise amplifier with on-chip microstrip lines and inter-stage matching in 90-nm baseline CMOS, in RFIC Symp. Dig., Jun. 2006, pp [25] C. H. Doan et al., Millimeter-wave CMOS design, IEEE J. Solid- State Circuits, vol. 40, no. 1, pp , Jan [26] A. Tomkins et al., A passive W-band imager in 65 nm bulk CMOS, in IEEE CSICS Digest, Oct. 2009, pp [27] T. 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Solid-State Circuits, vol. 41, no. 8, pp , Aug [34] B. Razavi, A millimeter-wave CMOS heterodyne receiver with on-chip LO and divider, IEEE J. Solid-State Circuits, vol. 43, no. 2, pp , Feb [35] S. Galal et al., 10-Gb/s limiting amplifier and laser/modulator driver in 0.18 m CMOS technology, IEEE J. Solid-State Circuits, vol. 38, no. 12, pp , Dec [36] B. Afshar et al., A robust 24 mw 60 GHz receiver in 90 nm standard CMOS, in IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, Feb. 2008, pp [37] B. Miller and R. Conley, A multiple modulator fractional divider, in Proc. 44th Annu. Frequency Control Symp., May 1990, pp [38] Synopsys [Online]. Available: [39] Texas Instruments [Online]. Available: [40] Altera [Online]. Available: [41] Rogers RO4003C [Online]. Available: acm/products/16/ro4000-series-high-frequency-circuit-materials-woven-glass-reinforced-ceramic-filled-thermoset.aspx [42] A. Babakhani et al., A 77-GHz phased-array transceiver with on-chip antennas in silicon: Receiver and antennas, IEEE J. Solid-State Circuits, pp , Dec [43] A. Natarajan et al., A 77-GHz phased-array transceiver with on-chip antennas in silicon: Transmitter and local LO-path phase shifting, IEEE J. Solid-State Circuits, pp , Dec Jri Lee (S 03 M 04) received the B.Sc. degree in electrical engineering from National Taiwan University (NTU), Taipei, Taiwan, in 1995, and the M.S. and Ph.D. degrees in electrical engineering from the University of California, Los Angeles (UCLA), both in After two years of military service ( ), he was with Academia Sinica, Taipei, Taiwan from 1997 to 1998, and subsequently Intel Corporation from 2000 to He joined National Taiwan University (NTU) since 2004, where he is currently an Associate Professor of electrical engineering. His current research interests include high-speed wireless and wireline transceivers, phase-locked loops, and data converters. Prof. Lee received the Beatrice Winner Award for Editorial Excellence at the 2007 ISSCC, the Takuo Sugano Award for Outstanding Far-East Paper at the 2008 ISSCC, the best technical paper award from Y. Z. Hsu memorial foundation in 2008, the T. Y. Wu memorial award from national science council (NSC), Taiwan in 2008, the Young Scientist Research Award from Academia Sinica in 2009, and the Outstanding Young Electrical Engineer award in He has also received NTU outstanding teaching award in 2007, 2008, and He has served as a Guest Editor of the IEEE Journal of Solid-State Circuits in 2008 and a tutorial Lecturer at the 2009 ISSCC. He is now serving in the Technical Program Committees of the International Solid-State Circuits Conference (ISSCC), Symposium on VLSI Circuits, and Asian Solid-State Circuits Conference (A-SSCC).

11 2756 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 45, NO. 12, DECEMBER 2010 Yi-An Li was born in Taichung, Taiwan, in He received the B.S. and M.S. degrees in electrical engineering from National Taiwan University, Taipei, Taiwan, in 2008 and 2010, respectively. His research interests include phase-locked loops and frequency synthesizers. Shih-Jou Huang was born in Tainan, Taiwan, in He received the B.S. degree in electrical engineering from National Tsing-Hua University, Hsinchu, Taiwan, in He is currently working toward the Ph.D. degree at National Taiwan University. His research interests focus on millimeter-wave wireless transceivers. Meng-Hsiung Hung was born in Tainan, Taiwan, in He received the B.S. degree in electrical engineering from National Tsing-Hua University, Hsinchu, Taiwan, in 2008, and the M.S. degree in electrical engineering from National Taiwan University, Taipei, Taiwan, in His research interests focus on millimeter-wave front-end circuits including antenna.

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