Freescale Semiconductor Data Sheet: Technical Data
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1 Freescale Semiconductor Data Sheet: Technical Data Media Resistant and High Temperature Accuracy Integrated Silicon Sensor for Measuring Absolute, On-Chip Signal Conditioned, Temperature Compensated and Calibrated The series sensor integrates on-chip, bipolar op amp circuitry and thin film resistor networks to provide a high output signal and temperature compensation. The sensor's packaging has been designed to provide resistance to high humidity conditions as well as common automotive media. The small form factor and high reliability of on-chip integration make the Freescale Semiconductor, Inc. pressure sensor a logical and economical choice for the system designer. The series piezoresistive transducer is a state-of-the-art, monolithic, signal conditioned, silicon pressure sensor. This sensor combines advanced micromachining techniques, thin film metallization, and bipolar semiconductor processing to provide an accurate, high level analog output signal that is proportional to applied pressure. Features 1.5% Maximum Error Over 0 to 85 C Resistant to High Humidity and Common Automotive Media Improved Accuracy at High Temperature Ideally suited for Microprocessor or Microcontroller-Based Systems Temperature Compensated from -40 to +125 C Durable Thermoplastic (PPS) Surface Mount Package Document Number: Rev 1.1, 05/2010 Series 15 to 130 kpa (2.2 to 18.9 psi) 0.2 to 4.8 V Output Application Examples Aviation Altimeters Industrial Controls Engine Control/Manifold Absolute (MAP) Weather Stations and Weather Reporting Devices ORDERING INFORMATION Device Name Package Case # of Ports Type Options No. None Single Dual Gauge Differential Absolute Device Marking Super Small Outline Package ( Series) 6U Rail 1317 C6U Rail 1317A SUPER SMALL OUTLINE PACKAGES 6U CASE 1317 C6U CASE 1317A , 2012 Freescale Semiconductor, Inc. All rights reserved.
2 Operating Characteristics Table 1. Operating Characteristics (V S = 5.0 Vdc, T A = 25 C unless otherwise noted, P1 > P2. Characteristic Symbol Min Typ Max Unit Range P OP kpa Supply Voltage (1) V S Vdc Supply Current I o madc Minimum Offset V S = 5.0 Volts Full Scale Output V S = 5.0 Volts Full Scale Span V S = 5.0 Volts Accuracy (5) (0 to 85 C) (0 to 85 C) (0 to 85 C) (0 to 85 C) V off Vdc V FSO Vdc V FSS Vdc ±1.5 %V FSS Sensitivity V/P 39.2 mv/kpa Response Time (6) Warm-Up Time (7) Offset Stability (8) t R 1.0 ms 20 ms ±0.25 %V FSS 1. Device is ratiometric within this specified excitation range. 2. Offset (V off ) is defined as the output voltage at the minimum rated pressure. 3. Full Scale Output (V FSO ) is defined as the output voltage at the maximum or full rated pressure. 4. Full Scale Span (V FSS ) is defined as the algebraic difference between the output voltage at full rated pressure and the output voltage at the minimum rated pressure. 5. Accuracy is the deviation in actual output from nominal output over the entire pressure range and temperature range as a percent of span at 25 C due to all sources of error including the following: Linearity: Temperature Hysteresis: Hysteresis: TcSpan: TcOffset: Output deviation from a straight line relationship with pressure over the specified pressure range. Output deviation at any temperature within the operating temperature range, after the temperature is cycled to and from the minimum or maximum operating temperature points, with zero differential pressure applied. Output deviation at any pressure within the specified range, when this pressure is cycled to and from minimum or maximum rated pressure at 25 C. Output deviation over the temperature range of 0 to 85 C, relative to 25 C. Output deviation with minimum pressure applied, over the temperature range of 0 to 85 C, relative to 25 C. 6. Response Time is defined as the time for the incremental change in the output to go from 10% to 90% of its final value when subjected to a specified step change in pressure. 7. Warm-up Time is defined as the time required for the product to meet the specified output voltage after the pressure has been stabilized. 8. Offset Stability is the product's output deviation when subjected to 1000 cycles of Pulsed, Temperature Cycling with Bias Test. 2 Freescale Semiconductor, Inc.
3 Maximum Ratings Table 2. Maximum Ratings (1) Rating Symbol Value Units Maximum (P1 > P2) P max 400 kpa Storage Temperature T stg -40 to +125 C Operating Temperature T A -40 to +125 C Output Source Full Scale Output (2) I o madc Output Sink Minimum Offset (2) I o madc 1. Exposure beyond the specified limits may cause permanent damage or degradation to the device. 2. Maximum Output Current is controlled by effective impedance from V OUT to Gnd or V OUT to V S in the application circuit. Figure 1 shows a block diagram of the internal circuitry integrated on a pressure sensor chip. V S 2 Sensing Element Thin Film Temperature Compensation and Gain Stage #1 Gain Stage #2 and Ground Reference Shift Circuitry 4 V OUT 3 GND Pins 1, 5, 6, 7, and 8 are NO CONNECTS Figure 1. Fully Integrated Sensor Schematic Freescale Semiconductor, Inc. 3
4 On-chip Temperature Compensation and Calibration Figure 4 shows the sensor output signal relative to pressure input. Typical minimum and maximum output curves are shown for operation over 0 to 85 C temperature range. The output will saturate outside of the rated pressure range. A gel die coat isolates the die surface and wire bonds from the environment, while allowing the pressure signal to be transmitted to the sensor diaphragm. The gel die coat and durable polymer package provide a media resistant barrier that allows the sensor to operate reliably in high humidity conditions as well as environments containing common automotive media. Contact the factory for more information regarding media compatibility in your specific application. Fluoro Silicone Gel Die Coat Wire Bond Lead Frame P1 Die Stainless Steel Cap Thermoplastic Case 100 nf +5.0 V V S Pin 2 V out Pin 4 to ADC GND Pin 3 47 pf 51 K Absolute Element Die Bond Sealed Vacuum Reference Figure 2. Cross Sectional Diagram SSOP (not to scale) Figure 3. Typical Application Circuit (Output Source Current Operation) Output (Volts) Transfer Function: V out =Vs x ( xp(kpa) ) +/- (PE x TM x Vs x ) PE = +/ kPa TM = 0 to 85 C Vs = 5.0Vdc MAX TYP MIN (ref: to sealed vacuum) in kpa Figure 4. Output vs. Absolute 4 Freescale Semiconductor, Inc.
5 Transfer Function () Nominal Transfer Value: V out = V S x ( x P(kPa) ) ± ( Error x Temp. factor x x V S ) V S = 5.0 ± 0.25 Vdc Temperature Error Band Series Temperature Error Factor Break Points Temp Multiplier to Temperature in Cº NOTE: The Temperature Multiplier is a linear response from 0ºC to -40ºC and from 85ºC to 125ºC Error Band 3.0 Error Limits for 2.0 Error (kpa) (in kpa) Error (Max) 15 to 130 (kpa) ±1.725 (kpa) Freescale Semiconductor, Inc. 5
6 MINIMUM RECOMMENDED FOOTPRINT FOR SUPER SMALL PACKAGES Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor package must be the correct size to ensure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self-align when subjected to a solder reflow process. It is always recommended to fabricate boards with a solder mask layer to avoid bridging and/or shorting between solder pads, especially on tight tolerances and/or tight layouts TYP TYP 8X TYP 8X 1.35 inch mm Figure 5. SSOP Footprint (Case 1317 and 1317A) 6 Freescale Semiconductor, Inc.
7 PACKAGE DIMENSIONS PAGE 1 OF 3 CASE ISSUE H SUPER SMALL OUTLINE PACKAGE Freescale Semiconductor, Inc. 7
8 PACKAGE DIMENSIONS PAGE 2 OF 3 CASE ISSUE H SUPER SMALL OUTLINE PACKAGE 8 Freescale Semiconductor, Inc.
9 PACKAGE DIMENSIONS CASE ISSUE H SUPER SMALL OUTLINE PACKAGE PAGE 3 OF 3 Freescale Semiconductor, Inc. 9
10 PACKAGE DIMENSIONS PAGE 1 OF 2 CASE 1317A-04 ISSUE D SUPER SMALL OUTLINE PACKAGE 10 Freescale Semiconductor, Inc.
11 PACKAGE DIMENSIONS PAGE 2 OF 2 CASE 1317A-04 ISSUE D SUPER SMALL OUTLINE PACKAGE Freescale Semiconductor, Inc. 11
12 Table 3. Revision History Revision number Revision date Description of changes /2012 Updated Package Drawing 98ARH99066A was Rev. F, updated to Rev. H. 12 Freescale Semiconductor, Inc.
13 How to Reach Us: Home Page: Web Support: Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including typicals, must be validated for each customer application by customer s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners Freescale Semiconductor, Inc. All rights reserved. Rev /2012
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Monolithic Silicon IC Containing Photodiode, Operational Amplifier, and Feedback Components Converts Light Intensity to a Voltage High Irradiance Responsivity, Typically 37 mv/(w/cm 2 ) at p = 635 nm ()
TSL250RD, TSL251RD, TSL260RD, TSL261RD LIGHT-TO-VOLTAGE OPTICAL SENSORS
Monolithic Silicon IC Containing Photodiode, Operational Amplifier, and Feedback Components Converts Light Intensity to a Voltage High Irradiance Responsivity, Typically 64 mv/(w/cm 2 ) at p = 640 nm (TSL250RD)
TSL1406R, TSL1406RS LINEAR SENSOR ARRAY WITH HOLD
768 Sensor-Element Organization 400 Dot-Per-Inch (DPI) Sensor Pitch High Linearity and Uniformity Wide Dynamic Range...4000: (7 db) Output Referenced to Ground Low Image Lag... 0.5% Typ Operation to 8
AP4310A. Pin Assignments. Description. Features. Applications. Typical Applications Circuit. A Product Line of. Diodes Incorporated
DUAL OP AMP AND VOLTAGE REFERENCE Description The is a monolithic IC specifically designed to regulate the output current and voltage levels of switching battery chargers and power supplies Pin Assignments
Micropower, Single-Supply, Rail-to-Rail, Precision Instrumentation Amplifiers MAX4194 MAX4197
General Description The is a variable-gain precision instrumentation amplifier that combines Rail-to-Rail single-supply operation, outstanding precision specifications, and a high gain bandwidth. This
NUS2045MN, NUS3045MN. Overvoltage Protection IC with Integrated MOSFET
, Overvoltage Protection IC with Integrated MOSFET These devices represent a new level of safety and integration by combining the NCP34 overvoltage protection circuit (OVP) with a 2 V P channel power MOSFET
TSL237T HIGH-SENSITIVITY LIGHT-TO-FREQUENCY CONVERTER TAOS055J DECEMBER 2007
High-Resolution Conversion of Light Intensity to Frequency With No External Components High Irradiance Responsivity... 1.2 khz/(w/cm 2 ) at λ p = 640 nm Low Dark Frequency...< 2 Hz at 50 C Single-Supply
Load Switch with Level-Shift
Load Switch with Level-Shift PRODUCT SUMMARY V IN (V DS2 ) (V) R DS(on) (Ω) I D (A).5 to 2 DESCRIPTION.54 at V IN = 4.5 V 3.9.77 at V IN = 2.5 V 3.2.6 at V IN =.8 V 2.8.65 at V IN =.5 V 2.2 The includes
0.7 A dual H-Bridge motor driver with 3.0 V/5.0 V compatible logic I/O
NXP Semiconductors Technical Data 0.7 A dual H-Bridge motor driver with 3.0 V/5.0 V compatible logic I/O The is a monolithic dual H-Bridge power IC ideal for portable electronic applications containing
EMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Features Simplifies Circuit Design Reduces Board Space Reduces Component
3.8 GHz Linear Power Amplifier and BTS Driver High Efficiency/Linearity Amplifier
Technical Data 3.8 GHz Linear Power Amplifier and BTS Driver High Efficiency/Linearity Amplifier The MMZ38333B is a 3--stage high linearity InGaP HBT broadband amplifier designed for small cells and LTE
MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
Improved Low Cost ±5 g Dual-Axis Accelerometer with Ratiometric Analog Outputs MXR7305VF
Improved Low Cost ±5 g Dual-Axis Accelerometer with Ratiometric Analog Outputs MXR7305VF FEATURES Dual axis accelerometer fabricated on a single CMOS IC Monolithic design with mixed mode signal processing