General Description. 5V Adapter or USB IN

Size: px
Start display at page:

Download "General Description. 5V Adapter or USB IN"

Transcription

1 Li+ Charger Protection IC Features Input Over-Voltage Protection Programmable Input Over-Current Protection Battery Over-Voltage Protection Over-Temperature Protection High Immunity of False Triggering High Accuracy Protection Thresholds Fault Status Indication Enable Input Available in TDFNx-8 Package Lead Free and Green Devices Available (RoHS Compliant) General Description The APL0A/B/C provide complete Li+ charger protections against over-voltage, over-current, and battery overvoltage. The IC is designed to monitor input voltage, input current, and battery voltage. When any of the monitored parameters are over the threshold, the IC removes the power from the charging system by turning off an internal switch. All protections also have deglitch time against false triggering due to voltage spikes or current transients. The APL0A/B/C also provide over-temperature protection, a FAULT output pin to indicate the fault conditions, and the EN pin to allow the system to disable the IC. Applications Simplified Application Circuit Smart Phones and PDAs Digital Still Cameras 5V Adapter or USB IN OUT Charger Input Portable Devices APL0A/B/C EN FAULT Pin Configuration IN GND NC EP 8 OUT 7 ILIM 6 BAT ILIM BAT GND Simplified Application Charger Output and System Li+ Battery FAULT 4 5 EN TDFNx-8 (Top View) ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.

2 Ordering and Marking Information APL0A APL0B APL0C Assembly Material Handling Code Temperature Range Package Code Package Code QB : TDFNx-8 Operating Ambient Temperature Range I : -40 to 85 o C Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device APL0A/C QB: APL0B QB: L0A X L0B X X - Date Code X - Date Code Note : ANPEC lead-free products contain molding compounds/die attach materials and 00% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-00D for MSL classification at lead-free peak reflow temperature. ANPEC defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 500ppm by weight). Absolute Maximum Ratings (Note ) Symbol Parameter Rating Unit IN Input Voltage (IN pin to GND) -0. to 0 V, V BAT OUT, BAT Pins to GND Voltage -0. to 7 V V ILIM,, V EN ILIM, FAULT, EN, Pins to GND Voltage -0. to 7 V I OUT OUT Output Current A T J Maximum Junction Temperature 50 T STG Storage Temperature Range -65 to 50 T SDR Maximum Lead Soldering Temperature,0 Seconds 60 o C o C o C Note : Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Thermal Characteristics Symbol Parameter Typical Value Unit θ JA (Note ) Junction to Ambient Thermal Resistance in Free Air TDFNx-8 80 C/W Note :θ JA is measured with the component mounted on a high effective thermal conductivity test board in free air. Recommended Operating Conditions Symbol Parameter Range Unit IN Input Voltage 4.5 to 5.5 V I OUT OUT Output Current 0 to.5 A T J Junction Temperature -40 to 5 C T A Ambient Temperature -40 to 85 C

3 Electrical Characteristics Refer to the typical application circuit. These specifications apply over =5V, T A = -40~85 C, unless otherwise specified. Typical values are at T A =5 C. Symbol Parameter Test Conditions POWER-ON-RESET (POR) AND SUPPLY CURRENT APL0A/B/C Min. Typ. Max. Unit V POR IN POR Threshold rising V IN POR Hysteresis mv I CC IN Supply Current EN = Low EN = High µa T B(IN) Input Power-On Blanking Time rising to rising ms INTERNAL POWER SWITCH AND OUT DISCHARGE RESISTANCE Power Switch On Resistance I OUT = 0.5A mω OUT Discharge Resistance = V Ω INPUT OVER-VOLTAGE PROTECTION (OVP) V OVP Input OVP Threshold APL0A/C, rising APL0B, rising V Input OVP Recovery Hysteresis mv Input OVP Propagation Delay - - µs T ON(OVP) Input OVP Recovery Time ms OVER-CURRENT PROTECTION (OCP) I OCP OCP Threshold R ILIM = 5kΩ ma OCP Threshold Accuracy I OCP = 00mA to 500mA % T B(OCP) OCP Blanking Time µs T ON(OCP) OCP Recovery Time ms BATTERY OVER-VOLTAGE PROTECTION V BOVP Battery OVP Threshold V BAT rising V Battery OVP Hysteresis mv I BAT BAT Pin Leakage Current V BAT = 4.4V na T B(BOVP) Battery OVP Blanking Time µs EN LOGIC LEVELS EN Input Logic High V EN Input Logic Low V EN Internal Pull-Low Resistor kω FAULT LOGIC LEVELS AND DELAY TIME FAULT Output Low Voltage Sink 5mA current V FAULT Pin Leakage Current = 5V - - µa OVER-TEMPERATURE PROTECTION (OTP) T OTP Over-Temperature Threshold C Over-Temperature Hysteresis C

4 Typical Operating Characteristics Input OVP Threshold, VOVP (V) Input OVP Threshold vs. Junction Temperature APL0A/C Increasing Decreasing Input OVP Threshold, V OVP (V) Input OVP Threshold vs. Junction Temperature APL0B Increasing Decreasing Junction Temperature ( o C ) Junction Temperature ( o C ) 4.40 Battery OVP Threshold vs. Junction Temperature 00 OCP Threshold vs. Junction Temperature Battery OVP Threshold, V BOVP (V) V BAT Increasing V BAT Decreasing OCP Threshold, I OCP (ma) Junction Temperature ( o C) IN Supply Current vs. Junction Temperature Junction Temperature ( o C) POR Threshold vs. Junction Temperature IN Supply Current, I CC (µα) EN = high POR Threshold, V POR (V) Increasing Decreasing Junction Temperature ( o C) Junction Temperature ( o C)

5 Typical Operating Characteristics (Cont.) Power Switch On Resistance, R DS,ON (Ω) Power Switch On Resistance vs. Input Voltage Power Switch On Resistance, R DS,ON (mω) Power Switch On Resistance vs. Junction Temperature Input Voltage, (V) Junction Temperature ( o C) 5

6 Operating Waveforms Refer to the typical application circuit. The test condition is =5V, T A = 5 o C unless otherwise specified. Normal Power On OVP at Power On = 0 to 5V = 0 to V I OUT C OUT =µf, C IN =µf, R OUT = 0Ω CH: CH:, V/Div, DC CH: I OUT, 0.5A/Div, DC TIME: ms/div C OUT =µf, C IN =µf, R OUT = 0Ω CH:, 0V/Div, DC CH:, V/Div, DC CH: TIME: ms/div Input Over-Voltage Protection Input Over-Voltage Protection APL0B APL0A/C C OUT = µf, C IN =µf, R OUT =50Ω CH:, 5V/Div, AC CH:, V/Div, DC CH: TIME:0µs/Div C OUT = µf, C IN =µf, R OUT =50Ω CH:, 5V/Div, AC CH:, V/Div, DC CH: TIME: 0µs/Div 6

7 Operating Waveforms (Cont.) Refer to the typical application circuit. The test condition is =5V, T A = 5 o C unless otherwise specified. Recovery from Input OVP Battery Over-Voltage Protection APL0B V BAT V C OUT = µf, C IN =µf, R OUT =50Ω CH:, 5V/Div, AC CH: CH: TIME: ms/div V BAT =.6V to 4.4V to.6v, R OUT =.Ω C OUT =µf, C IN =µf CH: V BAT, V/Div, DC CH:, V/Div, DC CH: TIME: 5ms/Div Battery Over-Voltage Protection Recovery from Battery OVP V BAT V BAT V BAT =.6V to 4.4V, R OUT =.Ω C OUT =µf, C IN =µf CH: V BAT, V/Div, DC CH:, V/Div, DC CH: TIME: 50µs/Div V BAT = 4.4V to.6v, R OUT =.Ω C OUT =µf, C IN =µf CH: V BAT, V/Div, DC CH:, V/Div, DC CH: TIME: 50µs/Div 7

8 Operating Waveforms (Cont.) Refer to the typical application circuit. The test condition is =5V, T A = 5 o C unless otherwise specified. Over-Current Protection Over-Current Protection I OUT I OUT 4 C OUT =µf, C IN =µf, I OUT = 0.5A to.a CH: I OUT, 0.5A/Div, DC CH:, V/Div, DC CH: TIME: 50µs/Div C OUT =µf, C IN =µf, R OUT =.5Ω CH: CH: CH: I OUT, 0.5A/Div, DC CH4: TIME: 00ms/Div 8

9 Pin Description NO. PIN NAME FUNCTION IN Power Supply Input. GND Ground. NC No Connection. 4 FAULT Fault Indication Pin. This pin goes low when input OVP, OCP, or battery OVP is detected. 5 EN Enable Input. Pull this pin to high to disable the device and pull this pin to low to enable device. 6 BAT Battery OVP Sense Pin. Connect to positive terminal of battery through a resistor. 7 ILIM Over-current Protection Setting Pin. Connect a resistor to GND to set the over-current threshold. 8 OUT Output Voltage Pin. The output voltage follows the input voltage when no fault is detected. - EP Exposed Thermal Pad. Must be electrically connected to the GND pin. Block Diagram IN OUT POR ILIM Charge Pump 0.5V Gate Driver and Control Logic.V V FAULT BAT OTP EN GND 9

10 Typical Application Circuit 5V Adapter/USB IN OUT 8 Charger µf µf APL0A/B/C FAULT 4 50K 50K VIO MCU 5K 7 ILIM GND EN BAT K Li+ Battery 50K GPIO Figure. The Typical Protection Circuit for Charger Systems. 0

11 Function Description Power-Up The APL0A/B/C have a built-in power-on-reset circuit to keep the output shutting off until internal circuitry is operating properly. The POR circuit has hysteresis and a de-glitch feature so that it will typically ignore undershoot transients on the input. When input voltage exceeds the POR threshold and after 8ms blanking time, the output voltage starts a soft-start to reduce the inrush current. Input Over-Voltage Protection (OVP) The input voltage is monitored by the internal OVP circuit. When the input voltage rises above the input OVP threshold, the internal FET will be turned off within µs to protect connected system on OUT pin. When the input voltage returns below the input OVP threshold minus the hysteresis, the FET is turned on again after 8ms recovery time. The input OVP circuit has a 00mV hysteresis and a recovery time of T ON(OVP) to provide noise immunity against transient conditions. Over-Current Protection (OCP) The output current is monitored by the internal OCP circuit. When the output current reaches the OCP threshold, the device limits the output current at OCP threshold level. If the OCP condition continues for a blanking time of T B(OCP), the internal power FET is turned off. After the recovery time of T ON(OCP), the FET will be turned on again and the output current is monitored again. The APL0A/B/C have a built-in counter. When the total count of OCP fault reaches 6, the FET is turned off permanently, requiring either a POR or EN re-enable again to restart. The OCP threshold is programmed by a resistor R ILIM connected from ILIM pin to GND. The OCP threshold is calculated by the following equation: K I OCP = R where K ILIM =5000AΩ ILIM ILIM the internal power FET is turned off. When the BP voltage returns below the battery OVP threshold minus the hysteresis, the FET is turned on again. The APL0A/B/ C have a built-in counter. When the total count of battery OVP fault reaches 6, the FET is turned off permanently, requiring either a POR or EN re-enable again to restart. Over-Temperature Protection When the junction temperature exceeds 40 ο C, the internal thermal sense circuit turns off the power FET and allows the device to cool down. When the device s junction temperature cools by 0 ο C, the internal thermal sense circuit will enable the device, resulting in a pulsed output during continuous thermal protection. Thermal protection is designed to protect the IC in the event of over temperature conditions. For normal operation, the junction temperature cannot exceed T J =+5 ο C. FAULT Output The APL0A/B/C provide an open-drain output to indicate that a fault has occurred. When any of input OVP, OCP, battery OVP, is detected, the FAULT goes low to indicate that a fault has occurred. Since the FAULT pin is an open-drain output, connecting a resistor to a pull high voltage is necessary. Enable/Shutdown Pull the EN pin voltage above.4v to disable the device and pull EN pin voltage below 0.4V to enable the device. The EN pin has an internal pull-down resistor and can be left floating. When the IC is latched off due to the total count of OCP or battery OVP reaches 6, disable and reenable the device with the EN pin can clear the counter. Battery Over-Voltage Protection The APL0A/B/C monitor the BAT pin voltage for battery over-voltage protection. The battery OVP threshold is internally set to 4.5V. When the BAT pin voltage exceeds the battery OVP threshold for a blanking time of T B(BOVP),

12 Function Description (Cont.) V OVP V POR T B(IN) T ON(OVP) Figure. OVP Timing Chart OCP Threshold I OUT Count times T B(OCP) T ON(OCP) T B(OCP) T B(OCP) Total count 6 times IC is latched off Figure. OCP Timing Chart

13 Function Description (Cont.) V BOVP V BOVP V BAT V BOVP Count times T B(BOVP) T B(BOVP) T B(BOVP) Total count 6 times IC is latched off Figure 4. Battery OVP Timing Chart

14 Application Information R BAT Selection Connect the BAT pin to the positive terminal of battery FAULT R UP VIO through a resistor R BAT for battery OVP function. The R BAT limits the current flowing from BAT to battery in case of BAT pin is shortened to VIN pin under a failure mode. The recommended value of R BAT is 00kΩ. In the worse case of an IC failure, the current flowing from the BAT pin to the battery is: (0V-V)/ 00kΩ =70µA where the 0V is the maximum IN voltage and the V is the minimum battery voltage. The current is so small and can be absorbed by the charger system. The disadvantage with the large R BAT is that the error of the battery OVP threshold will be increased. The additional error is the voltage drop across the R BAT because of the BAT bias current. When R BAT is 00kΩ, the worsecase additional error is 00kΩx0nA=mV, which is acceptable in most applications. R EN Selection For the same reason as the BAT pin case, the EN pin should be connected to the MCU GPIO pin through a resistor. The value of the R EN is dependent on the IO voltage of the MCU. Since the IO voltage is divided by R EN and EN internal pull low resistor for EN voltage. It has to be ensured that the EN voltage is above the EN logic high voltage when the GPIO output of the MCU is high. FAULT Output Since the FAULT pin is an open-drain output, connecting a resistor R UP to a pull high voltage is necessary. It is also recommended that connect the FAULT to the MCU GPIO through a resistor R FAULT. The R FAULT prevents damage to the MCU under a failure mode. The recommended value of the resistors should be between 0kΩ to 00kΩ. Capacitor Selection The input capacitor is for decoupling and prevents the input voltage from overshooting to dangerous levels. In the AC adapter hot plug-in applications or load current step-down transient, the input voltage has a transient spike due to the parasitic inductance of the input cable. A 5V, X5R, dielectric ceramic capacitor with a value between µf and 4.7µF placed close to the IN pin is recommended. EN BAT The output capacitor is for output voltage decoupling, and also can be as the input capacitor of the charging circuit. At least, a µf, 0V, X5R capacitor is recommended. Layout Consideration R BAT In some failure modes, a high voltage may be applied to the device. Make sure the clearance constraint of the PCB layout must satisfy the design rule for high voltage. The exposed pad of the TDFNx-8 performs the function of channeling heat away. It is recommended that connect the exposed pad to a large copper ground plane on the backside of the circuit board through several thermal vias to improve heat dissipation. The input and output capacitors should be placed close to the IC. R ILIM also should be placed close to the IC. The high current traces like input trace and output trace must be wide and short. Li+ Battery R EN R FAULT GPIO MCU GPIO Figure 5. R UP, R FAULT, R EN and R BAT 4

15 Package Information TDFNx-8 D A b E D A A Pin Corner L E e S Y M B O L A A A b D D E E e L TDFNx-8 MILLIMETERS INCHES MIN MAX MIN MAX REF REF BSC 0.00 BSC

16 Carrier Tape & Reel Dimensions OD0 P0 P P A H A E OD B A T B0 W F K0 B A0 SECTION A-A SECTION B-B d T Application A H T C d D W E F TDFNx MIN MIN. 0. MIN P0 P P D0 D T A0 B0 K MIN MIN.5 MIN (mm) Devices Per Unit Package Type Unit Quantity TDFNx-8 Tape & Reel 000 6

17 Taping Direction Information TDFNx-8 (for APL0A/B) USER DIRECTION OF FEED (Only for APL0C) USER DIRECTION OF FEED 7

18 Classification Profile 8

19 Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin) Temperature max (T smax) Time (T smin to T smax) (t s) 00 C 50 C 60-0 seconds 50 C 00 C 60-0 seconds Average ramp-up rate (T smax to T P) C/second max. C/second max. Liquidous temperature (T L) Time at liquidous (t L) Peak package body Temperature (T p)* Time (t P)** within 5 C of the specified classification temperature (T c) 8 C seconds 7 C seconds See Classification Temp in table See Classification Temp in table 0** seconds 0** seconds Average ramp-down rate (T p to T smax) 6 C/second max. 6 C/second max. Time 5 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum. Table. SnPb Eutectic Process Classification Temperatures (Tc) Package Thickness Volume mm <50 Volume mm 50 <.5 mm 5 C 0 C.5 mm 0 C 0 C Table. Pb-free Process Classification Temperatures (Tc) Package Thickness Volume mm <50 Volume mm Volume mm >000 <.6 mm 60 C 60 C 60 C.6 mm.5 mm 60 C 50 C 45 C.5 mm 50 C 45 C 45 C Reliability Test Program Test item Method Description SOLDERABILITY JESD-, B0 5 Sec, 45 C HOLT JESD-, A Hrs, 5 C PCT JESD-, A0 68 Hrs, 00%RH, atm, C TCT JESD-, A Cycles, -65 C~50 C HBM MIL-STD VHBM KV MM JESD-, A5 VMM 00V Latch-Up JESD 78 0ms, tr 00mA 9

20 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : Fax : Taipei Branch : F, No., Lane 8, Sec Jhongsing Rd., Sindian City, Taipei County 46, Taiwan Tel : Fax :

Features. General Description. Applications. Pin Configuration. Simplified Application Circuit. Li+ Charger Protection IC with Integrated P-MOSFET

Features. General Description. Applications. Pin Configuration. Simplified Application Circuit. Li+ Charger Protection IC with Integrated P-MOSFET Li+ Charger Protection IC with Integrated P-MOSFET Features Input Over-Voltage Protection Input Over-Current Protection Battery Over-Voltage Protection High Immunity of False Triggering High Accuracy Protection

More information

General Description. Applications. Simplified Application Circuit. Pin Configuration. Li+ Charger Protection IC

General Description. Applications. Simplified Application Circuit. Pin Configuration. Li+ Charger Protection IC Li+ Charger Protection IC Features Provide Input Over-Voltage Protection Programmable Input Over-Current Protection Battery Over-Voltage 4.35V/4.435V Protection Over-Temperature Protection High Immunity

More information

High Input Voltage, Low Quiescent Current, 150mA LDO Regulator

High Input Voltage, Low Quiescent Current, 150mA LDO Regulator High Input Voltage, Low Quiescent Current, 150mA LDO Regulator Features Wide Input Voltage Range: 5.4V to 25V Ultra Low Ground Current: 10mA High Output Accuracy: ±2.5% Excellent Load/Line Transient Low

More information

Ultra-Low-Noise, High PSRR, Low-Dropout, 300mA Linear Regulator V IN. Enable VIN 1 GND 2 SHDN 3

Ultra-Low-Noise, High PSRR, Low-Dropout, 300mA Linear Regulator V IN. Enable VIN 1 GND 2 SHDN 3 Ultra-Low-Noise, High PSRR, Low-Dropout, 300mA Linear Regulator Features General Description Wide Operating Voltage: 2.5~6V Low Dropout Voltage: 290mV@3V/300mA Fixed Output Voltages: 1.2~3.6V with Step

More information

Features. General Description. Applications. Pin Configuration. Ordering and Marking Information. Hall Effect Micro Switch IC

Features. General Description. Applications. Pin Configuration. Ordering and Marking Information. Hall Effect Micro Switch IC Hall Effect Micro Switch IC Features General Description Micro Power Operation for Battery Applications Chopper Stabilized Amplifier Independent of North or South Pole Magnet, Easy for Manufacture Small

More information

General Description OFF POK

General Description OFF POK Low Dropout Linear Regulator Controller Features General Description Wide Supply Voltage Range from 4.5 to 13.5V High Output Accuracy Over Operating Temperature and Loading Ranges Fast Transient Response

More information

Package Code. QF : VTDFN3x3-10 Operating Ambient Temperature Range I : -40 to 105 o C Handling Code TR : Tape & Reel. Handling Code Temperature Range

Package Code. QF : VTDFN3x3-10 Operating Ambient Temperature Range I : -40 to 105 o C Handling Code TR : Tape & Reel. Handling Code Temperature Range Three-Phase Sensor-Less Fan Motor Driver Features General Description Three-Phase Full-Wave Sensor-Less Drive Method Adjustable Forced Commutation Frequency (for Start-up) Built-In External PWM Speed Control

More information

Features. General Description. Simplified Application Circuit. Applications. Pin Configuration. 2A, Ultra Low Dropout (0.24V Typical) Linear Regulator

Features. General Description. Simplified Application Circuit. Applications. Pin Configuration. 2A, Ultra Low Dropout (0.24V Typical) Linear Regulator 2A, Ultra Low Dropout (0.24V Typical) Linear Regulator Features Ultra Low Dropout - 0.24V (typical) at 2A Output Current 0.8V Reference Voltage High Output Accuracy - 1.5% Over Line, Load, and Temperature

More information

Applications. Simplified Application Circuit. Pin Configuration. Power-Distribution Switches with Soft Start SOP-8P. (Top View)

Applications. Simplified Application Circuit. Pin Configuration. Power-Distribution Switches with Soft Start SOP-8P. (Top View) Power-Distribution Switches with Soft Start Features 84mW High Side MOSFET Soft Start Time Programmable by External Capacitor Wide Supply Voltage Range: 4.5V to 4V Current Limit Protections Under Voltage

More information

id6309 Li+ Charger Protection IC with Integrated PMOS General Description Features

id6309 Li+ Charger Protection IC with Integrated PMOS General Description Features Li+ Charger Protection IC with Integrated PMOS General Description Features The id6309 provides complete Li+ charger protection Input Over-Voltage Protection against input over-voltage, input over-current,

More information

APL3570. General Description. Features. Applications. Pin Configuration. Simplified Application Circuit. Single Channel Power-Load Switch VOUT 4 5 VIN

APL3570. General Description. Features. Applications. Pin Configuration. Simplified Application Circuit. Single Channel Power-Load Switch VOUT 4 5 VIN Single Channel Power-Load Switch Features Low On-resistance at VIN =3.3V : 35mΩ(typ.) 40mΩ(max.) Low Quiescent Current: 40mA (max.) VIN Supply Voltage Range:.7V to 4V Current Limit Protection Over-Temperature

More information

V OUT. Speed control voltage (V SET. Package Code. K : SOP-8 Operating Ambient Temperature Range I : -40 to 85 C Handling Code TR : Tape & Reel

V OUT. Speed control voltage (V SET. Package Code. K : SOP-8 Operating Ambient Temperature Range I : -40 to 85 C Handling Code TR : Tape & Reel Low Dropout 6mA Linear Regulator for DC Fan Control Features Low Dropout Voltage: mv (typical) @ 6mA Low Quiescent Current: 4mA Selectable Adjustable/Full Speed Mode O/I Voltage Ratio in Adjustable Mode

More information

OUT2 1 IN- Package Code X : MSOP - 8. Temperature Range. I : -40 to 105 C Handling Code TR : Tape & Reel. Handling Code.

OUT2 1 IN- Package Code X : MSOP - 8. Temperature Range. I : -40 to 105 C Handling Code TR : Tape & Reel. Handling Code. Single-Phase Full-Wave Motor Driver for Silent Fan Motor Features Single Phase Full Wave Fan Driver Silent Driver Low Supply Current Built-in Lock Protection and Auto Restart Function (External Capacitor

More information

USB Controller OCB 1 GND 2 EN 3 5 VOUT 4 VIN OCB 1 GND 2 5 VOUT ENB 3 4 VIN SOT-23-5 APL3550B/D/F. (Top View)

USB Controller OCB 1 GND 2 EN 3 5 VOUT 4 VIN OCB 1 GND 2 5 VOUT ENB 3 4 VIN SOT-23-5 APL3550B/D/F. (Top View) Power-Distribution Switches Features 7mW (MSOP-8) High Side MOSFET Wide Supply Voltage Range:.7V to 5.5V Current-Limit and Short-Circuit Protections Over-Temperature Protection Fault Indication Output

More information

Assembly Material. Handling Code Temperature Range Package Code

Assembly Material. Handling Code Temperature Range Package Code Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/3A, R DS(ON) =50mΩ(typ.) @ =4.5V R DS(ON) =65mΩ(typ.) @ =2.5V P-Channel -20V/-2A, R DS(ON) =90mΩ(typ.) @ =-4.5V R

More information

Ultra-Low On-Resistance, Power Load Switch with Soft Start V OUT

Ultra-Low On-Resistance, Power Load Switch with Soft Start V OUT Ultra-Low On-Resistance, Power Load Switch with Soft Start Features General Description Ultra-Low On-Resistance: 5mW(typical) Low Quiescent Current: 0mA(max) Soft Start Time Programmable by External Capacitor

More information

APL3512. General Description. Features. Applications. Simplified Application Circuit. Power-Distribution Switches with Soft Start

APL3512. General Description. Features. Applications. Simplified Application Circuit. Power-Distribution Switches with Soft Start Power-Distribution Switches with Soft Start Features 90mW High Side MOSFET 2A Continuous Current Soft-Start Time Programmable by External Capacitor Wide Supply Voltage Range: 2.7V to 5.5V Current-Limit

More information

General Description. Applications 16 PGND OUT2 2 OUT OUT1 VCC 3 MIN 4 SET 5 NC 2 VCC 3 MIN 4 SET 5 14 SGND 13 CT 12 NC OSC 6 FG 7 OSC 6 FG 7

General Description. Applications 16 PGND OUT2 2 OUT OUT1 VCC 3 MIN 4 SET 5 NC 2 VCC 3 MIN 4 SET 5 14 SGND 13 CT 12 NC OSC 6 FG 7 OSC 6 FG 7 Direct PWM Variable Speed Fan Motor Driver Features General Description Single Phase Full Wave Fan Driver Low Supply Current Built-In Variable Speed Function Include Hall Bias Circuit Built-In Lock Protection

More information

General Description. Pin Configuration. Applications. Three-Terminal Low Current Positive Voltage Regulator

General Description. Pin Configuration. Applications. Three-Terminal Low Current Positive Voltage Regulator Three-Terminal Low Current Positive Voltage Regulator Features Three-Terminal Regulators Maximum Input Voltage : 30V Output Voltages of 5V, 12V Output Current Up to 100m No External Components Internal

More information

APM8005K. Pin Description. Features. Applications. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 80V/4.

APM8005K. Pin Description. Features. Applications. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 80V/4. Dual N-Channel Enhancement Mode MOSFET Features Pin Description 80V/4.7A, R DS(ON) =45mΩ (Typ.) @ V GS = 10V R DS(ON) =55mΩ (Typ.) @ V GS = 5V Reliable and Rugged Lead Free and Green Devices Available

More information

General Description. Features. Applications. 3A, Ultra Low Dropout (0.23V Typical) Linear Regulator

General Description. Features. Applications. 3A, Ultra Low Dropout (0.23V Typical) Linear Regulator 3A, Ultra Low Dropout (0.23V Typical) Linear Regulator Features Compatible with APL593 Ultra Low Dropout - 0.23V(typical) at 3A Output Current Low ESR Output Capacitor (Multi-layer Chip Capacitors (MLCC))

More information

Source and Sink, 2A, Fast Transient Response Linear Regulator

Source and Sink, 2A, Fast Transient Response Linear Regulator Source and Sink, A, Fast Transient Response Linear Regulator Features General Description Provide Bi-direction Current The APL57 linear regulator is designed to provide a - Sourcing or Sinking Current

More information

General Description. Features. Simplified Application Circuit. Applications. Pin Configuration. 2A, Ultra Low Dropout (0.24V Typical) Linear Regulator

General Description. Features. Simplified Application Circuit. Applications. Pin Configuration. 2A, Ultra Low Dropout (0.24V Typical) Linear Regulator 2A, Ultra Low Dropout (0.2V Typical) Linear Regulator Features Ultra Low Dropout - 0.2V (Typical) at 2A Output Current 0.8V Reference Voltage High Output Accuracy -.5% Over Line, Load, and Temperature

More information

General Description. Lead Free and Green Device Available (RoHS Compliant) Pin Configuration

General Description. Lead Free and Green Device Available (RoHS Compliant) Pin Configuration Single-Phase digital calibration Motor Pre-Driver for Fan Motor Features General Description Single Phase Fan Pre-Driver Easy digital programming (EDP.) Built-in direct PWM input terminal Built-in soft

More information

Single-Phase Full-Wave Motor Driver with Built-in Hall Sensor. General Description

Single-Phase Full-Wave Motor Driver with Built-in Hall Sensor. General Description Single-Phase Full-Wave Motor Driver with uilt-in Hall Sensor Features On-chip Hall Sensor High Sensitivity Hall Effect Sensor IC: ±15G(Typ.) uilt-in Lock Protection and Auto Restart Function Speed Controllable

More information

General Description. Features. Simplified Application Circuit. Applications. 3A, Ultra Low Dropout (0.23V Typical) Linear Regulator

General Description. Features. Simplified Application Circuit. Applications. 3A, Ultra Low Dropout (0.23V Typical) Linear Regulator 3A, Ultra Low Dropout (0.23V Typical) Linear Regulator Features Compatible with APL5913 Ultra Low Dropout - 0.23V(typical) at 3A Output Current Low ESR Output Capacitor (Multi-layer Chip Capacitors (MLCC))

More information

General Description. Features. Applications. Pin Configuration. 1A Low Dropout, Fast Response Fixed Voltage Regulator APL1565A. Front View for SOP-8

General Description. Features. Applications. Pin Configuration. 1A Low Dropout, Fast Response Fixed Voltage Regulator APL1565A. Front View for SOP-8 1A Low Dropout, Fast Response Fixed Voltage Regulator Features General Description Guaranteed Output Voltage Accuracy within 2% Fast Transient Response Load Regulation : 1mV Typ. Line Regulation : 4mV

More information

Features. P-Channel Enhancement Mode MOSFET

Features. P-Channel Enhancement Mode MOSFET P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-3 R DS(ON) = 56mΩ (typ.) @ V GS = -4.5V R DS(ON) = 85mΩ (typ.) @ V GS = -2.5V R DS(ON) = 135mΩ (typ.) @ V GS = -1.8V Super High Dense Cell

More information

22μH. C1 1μF. C2 1μF 10 strings

22μH. C1 1μF. C2 1μF 10 strings Fixed 600kHz Step-UP Converter for White LEDs Features General Description Wide Input Voltage from 2.7V to 6V Fixed 600kHz Switching Frequency Reference Voltage : 0.2V PWM brightness control with wide

More information

Applications. Pin Configuration. Ordering and Marking Information. Hall Effect Micro Switch IC

Applications. Pin Configuration. Ordering and Marking Information. Hall Effect Micro Switch IC Hall Effect Micro Switch IC Features Micro Power Operation for Battery pplications Chopper Stabilized mplifier Independent of North or South Pole Magnet, Easy for Manufacture Small Size Package Lead Free

More information

Applications. C VCC 1uF VCC VIN PVCC APW8703 APW8706 APW8707 LX PWM PGND AGND

Applications. C VCC 1uF VCC VIN PVCC APW8703 APW8706 APW8707 LX PWM PGND AGND High-Performance, High-Current DrMOS Power Module Features 4.5V ~ 5.5V Input Range for VCC & PVCC 4.5V ~ 25V Input Range for Power-On-Reset Monitoring on VCC Pin APW8703-Up to 10A (peak), 8A (continuous)

More information

Source and Sink, 2A, Fast Transient Response Linear Regulator VIN VREF VOUT APL5339 VOSNS GND

Source and Sink, 2A, Fast Transient Response Linear Regulator VIN VREF VOUT APL5339 VOSNS GND Source and Sink, A, Fast Transient Response Linear Regulator Features Provide Bi-direction Currents - Sourcing or Sinking Current Up to A Built-in Soft-Start Power-On-Reset Monitoring on VCNTL Pins Fast

More information

General Description. Simplified Application Circuit Applications

General Description. Simplified Application Circuit Applications 3A 5V MHz Synchronous Buck Converter Features High Efficiency up to 95% - Automatic PFM/PWM Mode Operation Adjustable Output Voltage from 0.6V to V PVDD Integrated 65mW High Side / 55mW Low Side MOSFETs

More information

Features. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET

Features. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET Dual N-Channel Enhancement Mode MOSFET Features Pin Description 60V/5, R DS(ON) =38mΩ(Typ.) @ = V R DS(ON) =55mΩ(Typ.) @ = 4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices

More information

Features. N-Channel Enhancement Mode MOSFET 30V/50A, R DS(ON) =10V

Features. N-Channel Enhancement Mode MOSFET 30V/50A, R DS(ON) =10V N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5, R DS(ON) =7.5mΩ (typ.) @ =V R DS(ON) =12mΩ (typ.) @ =4.5V Super High Dense Cell Design Reliable and Rugged valanche Rated D G S Top View

More information

Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel)

Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) Dual Enhancement Mode MOSFET (N- and ) Features Pin Description N-Channel 4V/6.5A, R DS(ON) = mω (typ.) @ = V R DS(ON) = 8mΩ (typ.) @ = 4.5V -4V/-5A, R DS(ON) = 35mΩ (typ.) @ =-V R DS(ON) = 48mΩ (typ.)

More information

Pin Description. Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/8A, R DS(ON)

Pin Description. Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/8A, R DS(ON) Dual Enhancement Mode MOSFET (N- and ) Features Pin Description V/8A, R DS(ON) =mω(typ.) @ =.5V R DS(ON) =3mΩ(typ.) @ =.5V -V/-.3A, R DS(ON) =8mΩ(typ.) @ =-.5V R DS(ON) =5mΩ(typ.) @ =-.5V Super High Dense

More information

General Description. APW7104 BT Mouse PND Instrument V OUT (MLCC)

General Description. APW7104 BT Mouse PND Instrument V OUT (MLCC) 1.5MHz, 1A Synchronous Buck Regulator Features General Description 1A Output Current Wide 2.7V~6.0V Input Voltage Fixed 1.5MHz Switching Frequency Low Dropout Operating at 100% Duty Cycle 25mA Quiescent

More information

Applications VIN LX APW8825 NC FB PGND AGND

Applications VIN LX APW8825 NC FB PGND AGND 3A 5V 1MHz Synchronous Buck Converter Features High Efficiency up to 95% - Automatic Skip/PWM Mode Operation Adjustable Output Voltage from 0.6V to VIN Integrated 110mW High side 80mW Low Side MOSFET Low

More information

MP2671 Li-ion Battery Charger Protection Circuit

MP2671 Li-ion Battery Charger Protection Circuit The Future of Analog IC Technology MP2671 Li-ion Battery Charger Protection Circuit DESCRIPTION The MP2671 is a high-performance single cell Li-Ion/Li-Polymer battery charger protection circuit. By integrating

More information

APL3157. Applications. Pin Configuration. High-Density, +5.5V Capable DPDT Analog Switches

APL3157. Applications. Pin Configuration. High-Density, +5.5V Capable DPDT Analog Switches High-Density, +5.5V Capable DPDT Analog Switches Features Negative Audio and Video Signal Capable -0.3V to +5.5V Analog Signal Range Independent from VCC On-Resistance 0.2W (typ) +2.9V to +5.5V Single-Supply

More information

APW7251/A. Pin Configuration. Applications. Simplified Application Circuit. Boost and Dual LDOs with POK

APW7251/A. Pin Configuration. Applications. Simplified Application Circuit. Boost and Dual LDOs with POK Boost and Dual LDOs with POK Features General Description Wide Input Voltage from V to 5.5V Built-in Soft-start Boost Converter Fixed Output Voltage: APW75:.5V APW75A:.V

More information

Package Code S : SOP-8. Date Code YYXXX WW

Package Code S : SOP-8. Date Code YYXXX WW N-Channel Enhancement Mode MOSFET Features 100 V/8 A R DS(ON) = 20 m Ω (typ.) @ V GS =10V Avalanche Rated Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description D D D

More information

P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET Features -3V/-3, =46mΩ (typ.) @ V GS =-1V =55mΩ (typ.) @ V GS =-4.5V =79mΩ (typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices

More information

General Description. Features. Applications. Simplified Application Circuit. Pin Configuration. 5V to 12V Synchronous Buck Controller

General Description. Features. Applications. Simplified Application Circuit. Pin Configuration. 5V to 12V Synchronous Buck Controller 5V to V Synchronous Buck Controller Features Wide Operation Supply Voltage from 5V to V Power-On-Reset Monitoring on VCC Excellent Reference Voltage Regulations - 0.8V Internal Reference - ±% Over-Temperature

More information

P HY1906. B HY1906 ÿ YYXXXJWW G HY1906P/B. Features. N-Channel Enhancement Mode MOSFET V / 120A, R DS(ON)

P HY1906. B HY1906 ÿ YYXXXJWW G HY1906P/B. Features. N-Channel Enhancement Mode MOSFET V / 120A, R DS(ON) N-Channel Enhancement Mode MOSFET Features Pin Description 60V / 120A, R DS(ON) = 6.0 mω (typ.) @ V GS =V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D

More information

APX9200. Features. General Description. Applications. Pin Configuration. Single-Phase Full-Wave Motor Driver for Fan Motor

APX9200. Features. General Description. Applications. Pin Configuration. Single-Phase Full-Wave Motor Driver for Fan Motor Single-Phase Full-Wave Motor Driver for Fan Motor Features Single Phase Full Wave Fan Driver Built-in Reverse oltage Protection Circuit Built-in ariable Speed Curve Function. It can compensate motors whose

More information

P HY4004. B HY4004 ÿ YYXXXJWW G HY4004P/B. Features. N-Channel Enhancement Mode MOSFET. 100% avalanche tested. Switching application

P HY4004. B HY4004 ÿ YYXXXJWW G HY4004P/B. Features. N-Channel Enhancement Mode MOSFET. 100% avalanche tested. Switching application N-Channel Enhancement Mode MOSFET Features Pin Description 40V/ 208A R DS(ON) = 2.5 mω (typ.) @ V GS =0V 00% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G

More information

Package Code. Handling Code. Assembly Material

Package Code. Handling Code. Assembly Material P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4.9A, R DS(ON) =43mΩ (Max.) @ V GS =-4.5V R DS(ON) =58mΩ (Max.) @ V GS =-2.5V R DS(ON) =88mΩ (Max.) @ V GS =-1.8V 1% UIS + R g Tested Reliable

More information

Package Code. Date Code YYXXX WW

Package Code. Date Code YYXXX WW N-Channel Enhancement Mode MOSFET Features Pin Description 8V/ 2A R DS(ON) = 2.9 mω (typ.) @ V GS =1V 1% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S

More information

Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/3A, R DS(ON)

Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/3A, R DS(ON) Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/3A, =50mΩ(typ.) @ =4.5V =65mΩ(typ.) @ =2.5V P-Channel -20V/-2A, =90mΩ(typ.) @ =-4.5V =30mΩ(typ.) @ =-2.5V Reliable

More information

Date Code Assembly Material

Date Code Assembly Material N-Channel Enhancement Mode MOSFET Features 80V/ 200A R DS(ON) = 2.9 mω (typ.) @ V GS =10V 100% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description

More information

Features. General Description. Applications. Simplified Application Circuit. Pin Configuration. 5V to 12V Synchronous Buck Controller

Features. General Description. Applications. Simplified Application Circuit. Pin Configuration. 5V to 12V Synchronous Buck Controller APW765 5V to V Synchronous Buck Controller Features Wide Operation Supply Voltage from 5V to V Power-On-Reset Monitoring on VCC Excellent Reference Voltage Regulations - 0.8V Internal Reference - ±% Over

More information

Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET

Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4, =48mΩ(typ.) @ V GS =-4.5V =85mΩ(typ.) @ V GS =-2.5V =135mΩ(typ.) @ V GS =-1.8V Super High Dense Cell Design Reliable and Rugged Lead Free

More information

Date Code Assembly Material

Date Code Assembly Material N-Channel Enhancement Mode MOSFET Features 80V/ 170A R DS(ON) = 3.8 mω (typ.) @ V GS =10V 100% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description

More information

advise customers to obtain the latest version of relevant information to verify before placing orders.

advise customers to obtain the latest version of relevant information to verify before placing orders. N-Channel Enhancement Mode MOSFET Features Pin Description 68V/ 70A R DS(ON) = 6.5mΩ (typ.) @ V GS =V 0% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S

More information

Applications V CNTL V IN V OUT

Applications V CNTL V IN V OUT 3A, Ultra Low Dropout (0.23V Typical) Linear Regulator Features Ultra Low Dropout - 0.23V(typical) at 3A Output Current Low ESR Output Capacitor (Multi-layer Chip Capacitors (MLCC)) Applicable 0.8V Reference

More information

Features. N-Channel Enhancement Mode MOSFET 40V/57A, R DS(ON) =10V

Features. N-Channel Enhancement Mode MOSFET 40V/57A, R DS(ON) =10V PM41NU N-Channel Enhancement Mode MOSFET Features Pin Description 4V/57, R DS(ON) =8.2mΩ (typ.) @ V GS =1V R DS(ON) =13mΩ (typ.) @ V GS =5V Super High Dense Cell Design Reliable and Rugged Lead Free and

More information

G D S. Package Code U : TO-251-3L HY1908. Date Code YYXXX WW

G D S. Package Code U : TO-251-3L HY1908. Date Code YYXXX WW N-Channel Enhancement Mode MOSFET Features Pin Description 80V/90A, 7.8 R DS(ON) = mω (typ.) @ V GS =V Avalanche Rated Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S G

More information

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/5.1A, R DS(ON)

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/5.1A, R DS(ON) N-Channel Enhancement Mode MOSFET Features Pin Description 30V/5.1A, R DS(ON) =25mΩ(max.) @ V GS =10V R DS(ON) =35mΩ(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)

More information

Package Code P : TO-220FB-3L. Date Code YYXXX WW

Package Code P : TO-220FB-3L. Date Code YYXXX WW N-Channel Enhancement Mode MOSFET Features Pin Description 3V/ 29A R DS(ON) =.6mΩ (typ.) @ =V % EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology

More information

Temperature Range Package Code

Temperature Range Package Code N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5, R DS(ON) =4.8mΩ (typ.) @ V GS =V R DS(ON) =7mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green

More information

Three-Phase Full-wave Sine-wave Brushless Motor Driver

Three-Phase Full-wave Sine-wave Brushless Motor Driver Three-Phase Full-wave Sine-wave Brushless Motor Driver Features Three-Phase Full-Wave Sine-Wave Driver One-Hall or Sensor-Less driver control Rpm-Curve Control Rotation Direction Selectable Built-in 5V

More information

SGM4064 Over-Voltage Protection IC and Li+ Charger Front-End Protection IC with LDO Mode

SGM4064 Over-Voltage Protection IC and Li+ Charger Front-End Protection IC with LDO Mode GENERAL DESCRIPTION The SGM4064 is a charger front-end integrated circuit designed to provide protection to Li-ion batteries from failures of the charging circuitry. The IC continuously monitors the input

More information

Features. N-Channel Enhancement Mode MOSFET

Features. N-Channel Enhancement Mode MOSFET N-Channel Enhancement Mode MOSFET Features Pin Description V/5, R DS(ON) = 35mΩ (Typ.) @ V GS = V R DS(ON) = 45mΩ (Typ.) @ V GS = 4.5V R DS(ON) = mω (Typ.) @ V GS =.5V Super High Dense Cell Design Reliable

More information

RT A, Ultra Low Dropout LDO. General Description. Features. Applications. Pin Configurations. Ordering Information RT9025-

RT A, Ultra Low Dropout LDO. General Description. Features. Applications. Pin Configurations. Ordering Information RT9025- 2A, Ultra Low Dropout LDO General Description The RT9025 is a high performance positive voltage regulator designed for use in applications requiring very low Input voltage and extremely low dropout voltage

More information

G : Halogen and Lead Free Device SM 3403 XXXXX - Lot Code XXXXX

G : Halogen and Lead Free Device SM 3403 XXXXX - Lot Code XXXXX P-Channel Enhancement Mode MOSFET Features -2V/-95A, = 3.6mΩ(max.) @ =-1V = 4.6mΩ(max.) @ =-4.5V = 7mΩ(max.) @ =-2.5V = 1mΩ(max.) @ =-1.8V HBM ESD protection level of 2.3KV typical 1% UIS + R g Tested

More information

Features. N-Channel Enhancement Mode MOSFET 25V/60A, R DS(ON) =10V

Features. N-Channel Enhancement Mode MOSFET 25V/60A, R DS(ON) =10V N-Channel Enhancement Mode MOSFET Features Pin Description 25V/6, R DS(ON) =4.5mΩ (typ.) @ V GS =V R DS(ON) =7.5mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green

More information

Features. General Description. Applications. 8-PIN Synchronous Buck PWM Controller

Features. General Description. Applications. 8-PIN Synchronous Buck PWM Controller 8-PIN Synchronous Buck PWM Controller Features General Description Operating with Single 5V or 1V Input Drives N-Channel MOSFETs Simple Single-Loop Control Design - Voltage-Mode PWM Control - Full 0% to

More information

Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-68A, R DS(ON) =-10V = V GS. = 9mW(max.

Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-68A, R DS(ON) =-10V = V GS. = 9mW(max. P-Channel Enhancement Mode MOSFET Features -3V/-68, R DS(ON) = 9mW(max.) @ V GS =-V R DS(ON) = 5mW(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) HBM ESD

More information

N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET N-Channel Enhancement Mode MOSFET Features Pin Description 25V/5, R DS(ON) =8.5mΩ (typ.) @ V GS =1V R DS(ON) =15mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design valanche Rated Reliable and Rugged Lead

More information

Package Code. Handling Code. Assembly Material

Package Code. Handling Code. Assembly Material P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4.6, R DS(ON) = 48mW (Max.) @ V GS =-4.5V R DS(ON) = 7mW (Max.) @ V GS =-2.5V R DS(ON) =mw (Max.) @ V GS =-.8V Reliable and Rugged Lead Free

More information

SM1A16PSU/UB. Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -100V/-13A, R DS(ON) =-10V

SM1A16PSU/UB. Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -100V/-13A, R DS(ON) =-10V P-Channel Enhancement Mode MOSFET Features Pin Configuration -0V/-13A, R DS(ON) =205mΩ (max.) @ V GS =-V R DS(ON) =300mΩ (max.) @ V GS =-4V Reliable and Rugged D S G S D G Lead Free and Green Devices Available

More information

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 20V/6A, R DS(ON) =10V =30mW V GS. =25mW (max.

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 20V/6A, R DS(ON) =10V =30mW V GS. =25mW (max. SM23NS N-Channel Enhancement Mode MOSFET Features Pin Description 2V/6, R DS(ON) =25mW (max.) @ =V R DS(ON) =3mW (max.) @ =4.5V R DS(ON) =4mW (max.) @ =2.5V R DS(ON) =6mW (max.) @ =.8V D G S Reliable and

More information

AME. Low Dropout 2A CMOS Regulator AME8882. n General Description. n Typical Application. n Features. n Functional Block Diagram.

AME. Low Dropout 2A CMOS Regulator AME8882. n General Description. n Typical Application. n Features. n Functional Block Diagram. 8882 n General Description n Typical Application The 8882A/B family of positive CMOS linear regulators provides ultra low-dropout voltage (240mV @2A) and low quiescent current (typically 600uA), thus making

More information

Features. General Description. Applications. 4A, 26V, 380kHz, Asynchronous Step-Down Converter

Features. General Description. Applications. 4A, 26V, 380kHz, Asynchronous Step-Down Converter 4A, 6V, 380kHz, Asynchronous Step-Down Converter Features Wide Input Voltage from 4.5V to 6V Output Current up to 4A Adjustable Output Voltage from 0.8V to 90% - 0.8V Reference Voltage -.5% System Accuracy

More information

SGM2576/SGM2576B Power Distribution Switches

SGM2576/SGM2576B Power Distribution Switches /B GENERAL DESCRIPTION The and B are integrated typically 100mΩ power switch for self-powered and bus-powered Universal Series Bus (USB) applications. The and B integrate programmable current limiting

More information

V IN GND V OUT GND GND VIN

V IN GND V OUT GND GND VIN Low I Q, Low Dropout 900mA Fixed Voltage Regulator Features Low Noise : 50µV RMS (100Hz to 100kHz) Low Quiescent Current : 50µA (No load) Low Dropout Voltage : 210mV (@900mA) Very low Shutdown Current

More information

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/4.7A, R DS(ON) =10V V GS. =40mW(max.

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/4.7A, R DS(ON) =10V V GS. =40mW(max. N-Channel Enhancement Mode MOSFET Features Pin Description 3V/4.7, R DS(ON) =4mW(max.) @ V GS =V R DS(ON) =6mW(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant)

More information

RT9059A. 3A, Ultra-Low Dropout Voltage Regulator. General Description. Features. Applications. Ordering Information. Marking Information

RT9059A. 3A, Ultra-Low Dropout Voltage Regulator. General Description. Features. Applications. Ordering Information. Marking Information RT9059A 3A, Ultra-Low Dropout Voltage Regulator General Description The RT9059A is a high performance positive voltage regulator designed for use in applications requiring very low input voltage and very

More information

RT A, Ultra-Low Dropout Voltage Regulator. General Description. Features. Applications. Pin Configurations. Ordering Information

RT A, Ultra-Low Dropout Voltage Regulator. General Description. Features. Applications. Pin Configurations. Ordering Information RT9059 3A, Ultra-Low Dropout Voltage Regulator General Description The RT9059 is a high performance positive voltage regulator designed for use in applications requiring very low input voltage and very

More information

Package Code. Handling Code Temperature Range. Assembly Material

Package Code. Handling Code Temperature Range. Assembly Material Step-Up Converter for 4 Series White LEDs Driver Features General Description.5 V to 6V Input Voltage Range 400mA Internal Switch Current Up to MHz Switching Frequency 70mA Typical No Load Quiescent Current

More information

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/16A, R DS(ON) =10V

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/16A, R DS(ON) =10V N-Channel Enhancement Mode MOSFET Features Pin Description 1V/16, R DS(ON) = 1mW (max.) @ V GS =1V R DS(ON) = 17mW (max.) @ V GS =4.5V ESD Protected Reliable and Rugged Lead Free and Green Devices vailable

More information

Single Feedback High Current DC-DC. 6 pins / Low Cost / High Current and Performance / Low Cost DC-DC Boost. from 2.8 Volt Up to 30 Volt

Single Feedback High Current DC-DC. 6 pins / Low Cost / High Current and Performance / Low Cost DC-DC Boost. from 2.8 Volt Up to 30 Volt Single Feedback High Current DC-DC 6 pins / Low Cost / High Current and Performance / Low Cost DC-DC Boost DESCRIPTION from 2.8 Volt Up to 30 Volt is a DC-DC boost converter that provides an accurate constant

More information

AME. Low Dropout 3A CMOS Regulator AME8846. n General Description. n Typical Application. n Features. n Functional Block Diagram.

AME. Low Dropout 3A CMOS Regulator AME8846. n General Description. n Typical Application. n Features. n Functional Block Diagram. 8846 n General Description n Typical Application The 8846A/B family of positive CMOS linear regulators provides ultra low-dropout voltage (210mV @3A) and low quiescent current (typically 600uA), thus making

More information

SGM2553/SGM2553D Precision Adjustable Current Limited Power Distribution Switches

SGM2553/SGM2553D Precision Adjustable Current Limited Power Distribution Switches /D GENERAL DESCRIPTION The and D power distribution switches are intended for applications where precision current limiting is required or heavy capacitive loads and short circuits are encountered and

More information

RT A, Ultra-Low Dropout Voltage Regulator. General Description. Features. Applications. Pin Configurations. Ordering Information RT9059(- )

RT A, Ultra-Low Dropout Voltage Regulator. General Description. Features. Applications. Pin Configurations. Ordering Information RT9059(- ) RT9059 3A, Ultra-Low Dropout Voltage Regulator General Description The RT9059 is a high performance positive voltage regulator designed for use in applications requiring very low input voltage and very

More information

Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-9.3A, R DS(ON) =-10V = V GS. = 24mW(max.

Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-9.3A, R DS(ON) =-10V = V GS. = 24mW(max. P-Channel Enhancement Mode MOSFET Features Pin Description -3V/-9.3, R DS(ON) = 24mW(max.) @ V GS =-V R DS(ON) = 38mW(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS

More information

Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -20V/-12.2A, R DS(ON) =-4.5V =-2.5V. = 14mW(max.

Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -20V/-12.2A, R DS(ON) =-4.5V =-2.5V. = 14mW(max. P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-12.2, = 14mW(max.) @ V GS =-4.5V = 2mW(max.) @ V GS =-2.5V = 32mW(max.) @ V GS =-1.8V Reliable and Rugged Lead Free and Green Devices vailable

More information

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/8A, R DS(ON) = 10V. = V GS = 4.5V Reliable and Rugged

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/8A, R DS(ON) = 10V. = V GS = 4.5V Reliable and Rugged N-Channel Enhancement Mode MOSFET Features Pin Description V/8, R DS(ON) = 29mΩ(max.) @ V GS = V R DS(ON) = 33mΩ(max.) @ V GS = 4.5V Reliable and Rugged G D S Lead Free and Green Devices vailable (RoHS

More information

RT9008 SS. Low Dropout Linear Regulator Controller with Soft-Start. General Description. Features. Ordering Information.

RT9008 SS. Low Dropout Linear Regulator Controller with Soft-Start. General Description. Features. Ordering Information. Low Dropout Linear Regulator Controller with Soft-Start General Description The RT98 is a wide input range, low dropout voltage regulator controller with soft-start function. The part drives an external

More information

V IN V OUT. Assembly Material Handling Code Temperature Range Package Code

V IN V OUT. Assembly Material Handling Code Temperature Range Package Code Synchronous Buck PWM Controller Features Single Power Supply Required 0.6 Reference with % Accuracy Shutdown and Soft-Start Function Programmable Frequency Range from 50 khz to 000kHz oltage Mode PWM Control

More information

APL431L. General Description. Applications. Symbol. Functional Diagram. Low Voltage Adjustable Precision Shunt Regulator

APL431L. General Description. Applications. Symbol. Functional Diagram. Low Voltage Adjustable Precision Shunt Regulator Low Voltage Adjustable Precision Shunt Regulator Features Precise Reference Voltage to 1.24V Guaranteed.5% or 1% Reference Voltage Tolerance Sink Current Capability, 8uA to 1mA Quick Turn-on Adjustable

More information

SGM2551A/SGM2551C Precision Adjustable Current Limited Power Distribution Switches

SGM2551A/SGM2551C Precision Adjustable Current Limited Power Distribution Switches / GENERAL DESCRIPTION The SGM2551A and power distribution switches are intended for applications where precision current limiting is required or heavy capacitive loads and short circuits are encountered

More information

Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -60V/-15A, R DS(ON) =-10V

Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -60V/-15A, R DS(ON) =-10V P-Channel Enhancement Mode MOSFET Features -6V/-15, R DS(ON) =93mΩ(max.) @ V GS =-1V R DS(ON) =128mΩ(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) 1% UIS

More information

RT9728C. 120mΩ, 1.3A Power Switch with Programmable Current Limit. General Description. Features. Applications. Pin Configurations

RT9728C. 120mΩ, 1.3A Power Switch with Programmable Current Limit. General Description. Features. Applications. Pin Configurations RT9728C 120mΩ, 1.3A Power Switch with Programmable Current Limit General Description The RT9728C is a cost effective, low voltage, single P-MOSFET high-side power switch IC for USB application with a programmable

More information

RT A, Low Input Voltage, Ultra-Low Dropout LDO Regulator with Enable. Features. General Description. Applications. Ordering Information

RT A, Low Input Voltage, Ultra-Low Dropout LDO Regulator with Enable. Features. General Description. Applications. Ordering Information RT2516 2A, Low Input Voltage, Ultra-Low Dropout LDO Regulator with Enable General Description The RT2516 is a high performance positive voltage regulator designed for use in applications requiring ultra-low

More information

General Description. Applications. Pin Configuration. Simplified Application Circuit. PMIC for LCD Bias Power

General Description. Applications. Pin Configuration. Simplified Application Circuit. PMIC for LCD Bias Power PMIC for LCD Bias Power Features Input Voltage Range from 2.7V to 5.5V Positive & Negative Charge Pump for V GH & V GL High Performance Operation Amplifier - +100mA Output Short Circuit Current - 13V/ms

More information

SM7320ESQG. Features. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET. Channel 1 30V/64A, R DS(ON) = 2.5mΩ (max.

SM7320ESQG. Features. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET. Channel 1 30V/64A, R DS(ON) = 2.5mΩ (max. Dual N-Channel Enhancement Mode MOSFET Features Pin Description Channel 3V/64A, R DS(ON) = 5.2mΩ (max.) @ = V R DS(ON) = 7.5mΩ (max.) @ = 4.5V Channel 2 3V/85A, G2 S2S2S2 D G DD S/D2 (Pin 9) DFN5x6D-8_EP2

More information

SM2408NSAN. Applications. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET

SM2408NSAN. Applications. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET N-Channel Enhancement Mode MOSFET Features Pin Description 30V/4.8A R DS(ON) =31.2mΩ(max.)@V GS =10V R DS(ON) =54.6mΩ(max.)@V GS =4.5V D S Reliable and Rugged Lead Free and Green Devices Available (RoHS

More information