General Description. 5V Adapter or USB IN
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- Duane O’Connor’
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1 Li+ Charger Protection IC Features Input Over-Voltage Protection Programmable Input Over-Current Protection Battery Over-Voltage Protection Over-Temperature Protection High Immunity of False Triggering High Accuracy Protection Thresholds Fault Status Indication Enable Input Available in TDFNx-8 Package Lead Free and Green Devices Available (RoHS Compliant) General Description The APL0A/B/C provide complete Li+ charger protections against over-voltage, over-current, and battery overvoltage. The IC is designed to monitor input voltage, input current, and battery voltage. When any of the monitored parameters are over the threshold, the IC removes the power from the charging system by turning off an internal switch. All protections also have deglitch time against false triggering due to voltage spikes or current transients. The APL0A/B/C also provide over-temperature protection, a FAULT output pin to indicate the fault conditions, and the EN pin to allow the system to disable the IC. Applications Simplified Application Circuit Smart Phones and PDAs Digital Still Cameras 5V Adapter or USB IN OUT Charger Input Portable Devices APL0A/B/C EN FAULT Pin Configuration IN GND NC EP 8 OUT 7 ILIM 6 BAT ILIM BAT GND Simplified Application Charger Output and System Li+ Battery FAULT 4 5 EN TDFNx-8 (Top View) ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
2 Ordering and Marking Information APL0A APL0B APL0C Assembly Material Handling Code Temperature Range Package Code Package Code QB : TDFNx-8 Operating Ambient Temperature Range I : -40 to 85 o C Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device APL0A/C QB: APL0B QB: L0A X L0B X X - Date Code X - Date Code Note : ANPEC lead-free products contain molding compounds/die attach materials and 00% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-00D for MSL classification at lead-free peak reflow temperature. ANPEC defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 500ppm by weight). Absolute Maximum Ratings (Note ) Symbol Parameter Rating Unit IN Input Voltage (IN pin to GND) -0. to 0 V, V BAT OUT, BAT Pins to GND Voltage -0. to 7 V V ILIM,, V EN ILIM, FAULT, EN, Pins to GND Voltage -0. to 7 V I OUT OUT Output Current A T J Maximum Junction Temperature 50 T STG Storage Temperature Range -65 to 50 T SDR Maximum Lead Soldering Temperature,0 Seconds 60 o C o C o C Note : Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Thermal Characteristics Symbol Parameter Typical Value Unit θ JA (Note ) Junction to Ambient Thermal Resistance in Free Air TDFNx-8 80 C/W Note :θ JA is measured with the component mounted on a high effective thermal conductivity test board in free air. Recommended Operating Conditions Symbol Parameter Range Unit IN Input Voltage 4.5 to 5.5 V I OUT OUT Output Current 0 to.5 A T J Junction Temperature -40 to 5 C T A Ambient Temperature -40 to 85 C
3 Electrical Characteristics Refer to the typical application circuit. These specifications apply over =5V, T A = -40~85 C, unless otherwise specified. Typical values are at T A =5 C. Symbol Parameter Test Conditions POWER-ON-RESET (POR) AND SUPPLY CURRENT APL0A/B/C Min. Typ. Max. Unit V POR IN POR Threshold rising V IN POR Hysteresis mv I CC IN Supply Current EN = Low EN = High µa T B(IN) Input Power-On Blanking Time rising to rising ms INTERNAL POWER SWITCH AND OUT DISCHARGE RESISTANCE Power Switch On Resistance I OUT = 0.5A mω OUT Discharge Resistance = V Ω INPUT OVER-VOLTAGE PROTECTION (OVP) V OVP Input OVP Threshold APL0A/C, rising APL0B, rising V Input OVP Recovery Hysteresis mv Input OVP Propagation Delay - - µs T ON(OVP) Input OVP Recovery Time ms OVER-CURRENT PROTECTION (OCP) I OCP OCP Threshold R ILIM = 5kΩ ma OCP Threshold Accuracy I OCP = 00mA to 500mA % T B(OCP) OCP Blanking Time µs T ON(OCP) OCP Recovery Time ms BATTERY OVER-VOLTAGE PROTECTION V BOVP Battery OVP Threshold V BAT rising V Battery OVP Hysteresis mv I BAT BAT Pin Leakage Current V BAT = 4.4V na T B(BOVP) Battery OVP Blanking Time µs EN LOGIC LEVELS EN Input Logic High V EN Input Logic Low V EN Internal Pull-Low Resistor kω FAULT LOGIC LEVELS AND DELAY TIME FAULT Output Low Voltage Sink 5mA current V FAULT Pin Leakage Current = 5V - - µa OVER-TEMPERATURE PROTECTION (OTP) T OTP Over-Temperature Threshold C Over-Temperature Hysteresis C
4 Typical Operating Characteristics Input OVP Threshold, VOVP (V) Input OVP Threshold vs. Junction Temperature APL0A/C Increasing Decreasing Input OVP Threshold, V OVP (V) Input OVP Threshold vs. Junction Temperature APL0B Increasing Decreasing Junction Temperature ( o C ) Junction Temperature ( o C ) 4.40 Battery OVP Threshold vs. Junction Temperature 00 OCP Threshold vs. Junction Temperature Battery OVP Threshold, V BOVP (V) V BAT Increasing V BAT Decreasing OCP Threshold, I OCP (ma) Junction Temperature ( o C) IN Supply Current vs. Junction Temperature Junction Temperature ( o C) POR Threshold vs. Junction Temperature IN Supply Current, I CC (µα) EN = high POR Threshold, V POR (V) Increasing Decreasing Junction Temperature ( o C) Junction Temperature ( o C)
5 Typical Operating Characteristics (Cont.) Power Switch On Resistance, R DS,ON (Ω) Power Switch On Resistance vs. Input Voltage Power Switch On Resistance, R DS,ON (mω) Power Switch On Resistance vs. Junction Temperature Input Voltage, (V) Junction Temperature ( o C) 5
6 Operating Waveforms Refer to the typical application circuit. The test condition is =5V, T A = 5 o C unless otherwise specified. Normal Power On OVP at Power On = 0 to 5V = 0 to V I OUT C OUT =µf, C IN =µf, R OUT = 0Ω CH: CH:, V/Div, DC CH: I OUT, 0.5A/Div, DC TIME: ms/div C OUT =µf, C IN =µf, R OUT = 0Ω CH:, 0V/Div, DC CH:, V/Div, DC CH: TIME: ms/div Input Over-Voltage Protection Input Over-Voltage Protection APL0B APL0A/C C OUT = µf, C IN =µf, R OUT =50Ω CH:, 5V/Div, AC CH:, V/Div, DC CH: TIME:0µs/Div C OUT = µf, C IN =µf, R OUT =50Ω CH:, 5V/Div, AC CH:, V/Div, DC CH: TIME: 0µs/Div 6
7 Operating Waveforms (Cont.) Refer to the typical application circuit. The test condition is =5V, T A = 5 o C unless otherwise specified. Recovery from Input OVP Battery Over-Voltage Protection APL0B V BAT V C OUT = µf, C IN =µf, R OUT =50Ω CH:, 5V/Div, AC CH: CH: TIME: ms/div V BAT =.6V to 4.4V to.6v, R OUT =.Ω C OUT =µf, C IN =µf CH: V BAT, V/Div, DC CH:, V/Div, DC CH: TIME: 5ms/Div Battery Over-Voltage Protection Recovery from Battery OVP V BAT V BAT V BAT =.6V to 4.4V, R OUT =.Ω C OUT =µf, C IN =µf CH: V BAT, V/Div, DC CH:, V/Div, DC CH: TIME: 50µs/Div V BAT = 4.4V to.6v, R OUT =.Ω C OUT =µf, C IN =µf CH: V BAT, V/Div, DC CH:, V/Div, DC CH: TIME: 50µs/Div 7
8 Operating Waveforms (Cont.) Refer to the typical application circuit. The test condition is =5V, T A = 5 o C unless otherwise specified. Over-Current Protection Over-Current Protection I OUT I OUT 4 C OUT =µf, C IN =µf, I OUT = 0.5A to.a CH: I OUT, 0.5A/Div, DC CH:, V/Div, DC CH: TIME: 50µs/Div C OUT =µf, C IN =µf, R OUT =.5Ω CH: CH: CH: I OUT, 0.5A/Div, DC CH4: TIME: 00ms/Div 8
9 Pin Description NO. PIN NAME FUNCTION IN Power Supply Input. GND Ground. NC No Connection. 4 FAULT Fault Indication Pin. This pin goes low when input OVP, OCP, or battery OVP is detected. 5 EN Enable Input. Pull this pin to high to disable the device and pull this pin to low to enable device. 6 BAT Battery OVP Sense Pin. Connect to positive terminal of battery through a resistor. 7 ILIM Over-current Protection Setting Pin. Connect a resistor to GND to set the over-current threshold. 8 OUT Output Voltage Pin. The output voltage follows the input voltage when no fault is detected. - EP Exposed Thermal Pad. Must be electrically connected to the GND pin. Block Diagram IN OUT POR ILIM Charge Pump 0.5V Gate Driver and Control Logic.V V FAULT BAT OTP EN GND 9
10 Typical Application Circuit 5V Adapter/USB IN OUT 8 Charger µf µf APL0A/B/C FAULT 4 50K 50K VIO MCU 5K 7 ILIM GND EN BAT K Li+ Battery 50K GPIO Figure. The Typical Protection Circuit for Charger Systems. 0
11 Function Description Power-Up The APL0A/B/C have a built-in power-on-reset circuit to keep the output shutting off until internal circuitry is operating properly. The POR circuit has hysteresis and a de-glitch feature so that it will typically ignore undershoot transients on the input. When input voltage exceeds the POR threshold and after 8ms blanking time, the output voltage starts a soft-start to reduce the inrush current. Input Over-Voltage Protection (OVP) The input voltage is monitored by the internal OVP circuit. When the input voltage rises above the input OVP threshold, the internal FET will be turned off within µs to protect connected system on OUT pin. When the input voltage returns below the input OVP threshold minus the hysteresis, the FET is turned on again after 8ms recovery time. The input OVP circuit has a 00mV hysteresis and a recovery time of T ON(OVP) to provide noise immunity against transient conditions. Over-Current Protection (OCP) The output current is monitored by the internal OCP circuit. When the output current reaches the OCP threshold, the device limits the output current at OCP threshold level. If the OCP condition continues for a blanking time of T B(OCP), the internal power FET is turned off. After the recovery time of T ON(OCP), the FET will be turned on again and the output current is monitored again. The APL0A/B/C have a built-in counter. When the total count of OCP fault reaches 6, the FET is turned off permanently, requiring either a POR or EN re-enable again to restart. The OCP threshold is programmed by a resistor R ILIM connected from ILIM pin to GND. The OCP threshold is calculated by the following equation: K I OCP = R where K ILIM =5000AΩ ILIM ILIM the internal power FET is turned off. When the BP voltage returns below the battery OVP threshold minus the hysteresis, the FET is turned on again. The APL0A/B/ C have a built-in counter. When the total count of battery OVP fault reaches 6, the FET is turned off permanently, requiring either a POR or EN re-enable again to restart. Over-Temperature Protection When the junction temperature exceeds 40 ο C, the internal thermal sense circuit turns off the power FET and allows the device to cool down. When the device s junction temperature cools by 0 ο C, the internal thermal sense circuit will enable the device, resulting in a pulsed output during continuous thermal protection. Thermal protection is designed to protect the IC in the event of over temperature conditions. For normal operation, the junction temperature cannot exceed T J =+5 ο C. FAULT Output The APL0A/B/C provide an open-drain output to indicate that a fault has occurred. When any of input OVP, OCP, battery OVP, is detected, the FAULT goes low to indicate that a fault has occurred. Since the FAULT pin is an open-drain output, connecting a resistor to a pull high voltage is necessary. Enable/Shutdown Pull the EN pin voltage above.4v to disable the device and pull EN pin voltage below 0.4V to enable the device. The EN pin has an internal pull-down resistor and can be left floating. When the IC is latched off due to the total count of OCP or battery OVP reaches 6, disable and reenable the device with the EN pin can clear the counter. Battery Over-Voltage Protection The APL0A/B/C monitor the BAT pin voltage for battery over-voltage protection. The battery OVP threshold is internally set to 4.5V. When the BAT pin voltage exceeds the battery OVP threshold for a blanking time of T B(BOVP),
12 Function Description (Cont.) V OVP V POR T B(IN) T ON(OVP) Figure. OVP Timing Chart OCP Threshold I OUT Count times T B(OCP) T ON(OCP) T B(OCP) T B(OCP) Total count 6 times IC is latched off Figure. OCP Timing Chart
13 Function Description (Cont.) V BOVP V BOVP V BAT V BOVP Count times T B(BOVP) T B(BOVP) T B(BOVP) Total count 6 times IC is latched off Figure 4. Battery OVP Timing Chart
14 Application Information R BAT Selection Connect the BAT pin to the positive terminal of battery FAULT R UP VIO through a resistor R BAT for battery OVP function. The R BAT limits the current flowing from BAT to battery in case of BAT pin is shortened to VIN pin under a failure mode. The recommended value of R BAT is 00kΩ. In the worse case of an IC failure, the current flowing from the BAT pin to the battery is: (0V-V)/ 00kΩ =70µA where the 0V is the maximum IN voltage and the V is the minimum battery voltage. The current is so small and can be absorbed by the charger system. The disadvantage with the large R BAT is that the error of the battery OVP threshold will be increased. The additional error is the voltage drop across the R BAT because of the BAT bias current. When R BAT is 00kΩ, the worsecase additional error is 00kΩx0nA=mV, which is acceptable in most applications. R EN Selection For the same reason as the BAT pin case, the EN pin should be connected to the MCU GPIO pin through a resistor. The value of the R EN is dependent on the IO voltage of the MCU. Since the IO voltage is divided by R EN and EN internal pull low resistor for EN voltage. It has to be ensured that the EN voltage is above the EN logic high voltage when the GPIO output of the MCU is high. FAULT Output Since the FAULT pin is an open-drain output, connecting a resistor R UP to a pull high voltage is necessary. It is also recommended that connect the FAULT to the MCU GPIO through a resistor R FAULT. The R FAULT prevents damage to the MCU under a failure mode. The recommended value of the resistors should be between 0kΩ to 00kΩ. Capacitor Selection The input capacitor is for decoupling and prevents the input voltage from overshooting to dangerous levels. In the AC adapter hot plug-in applications or load current step-down transient, the input voltage has a transient spike due to the parasitic inductance of the input cable. A 5V, X5R, dielectric ceramic capacitor with a value between µf and 4.7µF placed close to the IN pin is recommended. EN BAT The output capacitor is for output voltage decoupling, and also can be as the input capacitor of the charging circuit. At least, a µf, 0V, X5R capacitor is recommended. Layout Consideration R BAT In some failure modes, a high voltage may be applied to the device. Make sure the clearance constraint of the PCB layout must satisfy the design rule for high voltage. The exposed pad of the TDFNx-8 performs the function of channeling heat away. It is recommended that connect the exposed pad to a large copper ground plane on the backside of the circuit board through several thermal vias to improve heat dissipation. The input and output capacitors should be placed close to the IC. R ILIM also should be placed close to the IC. The high current traces like input trace and output trace must be wide and short. Li+ Battery R EN R FAULT GPIO MCU GPIO Figure 5. R UP, R FAULT, R EN and R BAT 4
15 Package Information TDFNx-8 D A b E D A A Pin Corner L E e S Y M B O L A A A b D D E E e L TDFNx-8 MILLIMETERS INCHES MIN MAX MIN MAX REF REF BSC 0.00 BSC
16 Carrier Tape & Reel Dimensions OD0 P0 P P A H A E OD B A T B0 W F K0 B A0 SECTION A-A SECTION B-B d T Application A H T C d D W E F TDFNx MIN MIN. 0. MIN P0 P P D0 D T A0 B0 K MIN MIN.5 MIN (mm) Devices Per Unit Package Type Unit Quantity TDFNx-8 Tape & Reel 000 6
17 Taping Direction Information TDFNx-8 (for APL0A/B) USER DIRECTION OF FEED (Only for APL0C) USER DIRECTION OF FEED 7
18 Classification Profile 8
19 Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin) Temperature max (T smax) Time (T smin to T smax) (t s) 00 C 50 C 60-0 seconds 50 C 00 C 60-0 seconds Average ramp-up rate (T smax to T P) C/second max. C/second max. Liquidous temperature (T L) Time at liquidous (t L) Peak package body Temperature (T p)* Time (t P)** within 5 C of the specified classification temperature (T c) 8 C seconds 7 C seconds See Classification Temp in table See Classification Temp in table 0** seconds 0** seconds Average ramp-down rate (T p to T smax) 6 C/second max. 6 C/second max. Time 5 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum. Table. SnPb Eutectic Process Classification Temperatures (Tc) Package Thickness Volume mm <50 Volume mm 50 <.5 mm 5 C 0 C.5 mm 0 C 0 C Table. Pb-free Process Classification Temperatures (Tc) Package Thickness Volume mm <50 Volume mm Volume mm >000 <.6 mm 60 C 60 C 60 C.6 mm.5 mm 60 C 50 C 45 C.5 mm 50 C 45 C 45 C Reliability Test Program Test item Method Description SOLDERABILITY JESD-, B0 5 Sec, 45 C HOLT JESD-, A Hrs, 5 C PCT JESD-, A0 68 Hrs, 00%RH, atm, C TCT JESD-, A Cycles, -65 C~50 C HBM MIL-STD VHBM KV MM JESD-, A5 VMM 00V Latch-Up JESD 78 0ms, tr 00mA 9
20 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : Fax : Taipei Branch : F, No., Lane 8, Sec Jhongsing Rd., Sindian City, Taipei County 46, Taiwan Tel : Fax :
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Dual Enhancement Mode MOSFET (N- and ) Features Pin Description V/8A, R DS(ON) =mω(typ.) @ =.5V R DS(ON) =3mΩ(typ.) @ =.5V -V/-.3A, R DS(ON) =8mΩ(typ.) @ =-.5V R DS(ON) =5mΩ(typ.) @ =-.5V Super High Dense
More informationGeneral Description. APW7104 BT Mouse PND Instrument V OUT (MLCC)
1.5MHz, 1A Synchronous Buck Regulator Features General Description 1A Output Current Wide 2.7V~6.0V Input Voltage Fixed 1.5MHz Switching Frequency Low Dropout Operating at 100% Duty Cycle 25mA Quiescent
More informationApplications VIN LX APW8825 NC FB PGND AGND
3A 5V 1MHz Synchronous Buck Converter Features High Efficiency up to 95% - Automatic Skip/PWM Mode Operation Adjustable Output Voltage from 0.6V to VIN Integrated 110mW High side 80mW Low Side MOSFET Low
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The Future of Analog IC Technology MP2671 Li-ion Battery Charger Protection Circuit DESCRIPTION The MP2671 is a high-performance single cell Li-Ion/Li-Polymer battery charger protection circuit. By integrating
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High-Density, +5.5V Capable DPDT Analog Switches Features Negative Audio and Video Signal Capable -0.3V to +5.5V Analog Signal Range Independent from VCC On-Resistance 0.2W (typ) +2.9V to +5.5V Single-Supply
More informationAPW7251/A. Pin Configuration. Applications. Simplified Application Circuit. Boost and Dual LDOs with POK
Boost and Dual LDOs with POK Features General Description Wide Input Voltage from V to 5.5V Built-in Soft-start Boost Converter Fixed Output Voltage: APW75:.5V APW75A:.V
More informationPackage Code S : SOP-8. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features 100 V/8 A R DS(ON) = 20 m Ω (typ.) @ V GS =10V Avalanche Rated Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description D D D
More informationP-Channel Enhancement Mode MOSFET
Features -3V/-3, =46mΩ (typ.) @ V GS =-1V =55mΩ (typ.) @ V GS =-4.5V =79mΩ (typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices
More informationGeneral Description. Features. Applications. Simplified Application Circuit. Pin Configuration. 5V to 12V Synchronous Buck Controller
5V to V Synchronous Buck Controller Features Wide Operation Supply Voltage from 5V to V Power-On-Reset Monitoring on VCC Excellent Reference Voltage Regulations - 0.8V Internal Reference - ±% Over-Temperature
More informationP HY1906. B HY1906 ÿ YYXXXJWW G HY1906P/B. Features. N-Channel Enhancement Mode MOSFET V / 120A, R DS(ON)
N-Channel Enhancement Mode MOSFET Features Pin Description 60V / 120A, R DS(ON) = 6.0 mω (typ.) @ V GS =V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D
More informationAPX9200. Features. General Description. Applications. Pin Configuration. Single-Phase Full-Wave Motor Driver for Fan Motor
Single-Phase Full-Wave Motor Driver for Fan Motor Features Single Phase Full Wave Fan Driver Built-in Reverse oltage Protection Circuit Built-in ariable Speed Curve Function. It can compensate motors whose
More informationP HY4004. B HY4004 ÿ YYXXXJWW G HY4004P/B. Features. N-Channel Enhancement Mode MOSFET. 100% avalanche tested. Switching application
N-Channel Enhancement Mode MOSFET Features Pin Description 40V/ 208A R DS(ON) = 2.5 mω (typ.) @ V GS =0V 00% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G
More informationPackage Code. Handling Code. Assembly Material
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4.9A, R DS(ON) =43mΩ (Max.) @ V GS =-4.5V R DS(ON) =58mΩ (Max.) @ V GS =-2.5V R DS(ON) =88mΩ (Max.) @ V GS =-1.8V 1% UIS + R g Tested Reliable
More informationPackage Code. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features Pin Description 8V/ 2A R DS(ON) = 2.9 mω (typ.) @ V GS =1V 1% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S
More informationFeatures. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/3A, R DS(ON)
Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/3A, =50mΩ(typ.) @ =4.5V =65mΩ(typ.) @ =2.5V P-Channel -20V/-2A, =90mΩ(typ.) @ =-4.5V =30mΩ(typ.) @ =-2.5V Reliable
More informationDate Code Assembly Material
N-Channel Enhancement Mode MOSFET Features 80V/ 200A R DS(ON) = 2.9 mω (typ.) @ V GS =10V 100% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description
More informationFeatures. General Description. Applications. Simplified Application Circuit. Pin Configuration. 5V to 12V Synchronous Buck Controller
APW765 5V to V Synchronous Buck Controller Features Wide Operation Supply Voltage from 5V to V Power-On-Reset Monitoring on VCC Excellent Reference Voltage Regulations - 0.8V Internal Reference - ±% Over
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4, =48mΩ(typ.) @ V GS =-4.5V =85mΩ(typ.) @ V GS =-2.5V =135mΩ(typ.) @ V GS =-1.8V Super High Dense Cell Design Reliable and Rugged Lead Free
More informationDate Code Assembly Material
N-Channel Enhancement Mode MOSFET Features 80V/ 170A R DS(ON) = 3.8 mω (typ.) @ V GS =10V 100% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description
More informationadvise customers to obtain the latest version of relevant information to verify before placing orders.
N-Channel Enhancement Mode MOSFET Features Pin Description 68V/ 70A R DS(ON) = 6.5mΩ (typ.) @ V GS =V 0% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S
More informationApplications V CNTL V IN V OUT
3A, Ultra Low Dropout (0.23V Typical) Linear Regulator Features Ultra Low Dropout - 0.23V(typical) at 3A Output Current Low ESR Output Capacitor (Multi-layer Chip Capacitors (MLCC)) Applicable 0.8V Reference
More informationFeatures. N-Channel Enhancement Mode MOSFET 40V/57A, R DS(ON) =10V
PM41NU N-Channel Enhancement Mode MOSFET Features Pin Description 4V/57, R DS(ON) =8.2mΩ (typ.) @ V GS =1V R DS(ON) =13mΩ (typ.) @ V GS =5V Super High Dense Cell Design Reliable and Rugged Lead Free and
More informationG D S. Package Code U : TO-251-3L HY1908. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features Pin Description 80V/90A, 7.8 R DS(ON) = mω (typ.) @ V GS =V Avalanche Rated Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S G
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/5.1A, R DS(ON)
N-Channel Enhancement Mode MOSFET Features Pin Description 30V/5.1A, R DS(ON) =25mΩ(max.) @ V GS =10V R DS(ON) =35mΩ(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)
More informationPackage Code P : TO-220FB-3L. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/ 29A R DS(ON) =.6mΩ (typ.) @ =V % EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology
More informationTemperature Range Package Code
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5, R DS(ON) =4.8mΩ (typ.) @ V GS =V R DS(ON) =7mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green
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GENERAL DESCRIPTION The SGM4064 is a charger front-end integrated circuit designed to provide protection to Li-ion batteries from failures of the charging circuitry. The IC continuously monitors the input
More informationFeatures. N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET Features Pin Description V/5, R DS(ON) = 35mΩ (Typ.) @ V GS = V R DS(ON) = 45mΩ (Typ.) @ V GS = 4.5V R DS(ON) = mω (Typ.) @ V GS =.5V Super High Dense Cell Design Reliable
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2A, Ultra Low Dropout LDO General Description The RT9025 is a high performance positive voltage regulator designed for use in applications requiring very low Input voltage and extremely low dropout voltage
More informationG : Halogen and Lead Free Device SM 3403 XXXXX - Lot Code XXXXX
P-Channel Enhancement Mode MOSFET Features -2V/-95A, = 3.6mΩ(max.) @ =-1V = 4.6mΩ(max.) @ =-4.5V = 7mΩ(max.) @ =-2.5V = 1mΩ(max.) @ =-1.8V HBM ESD protection level of 2.3KV typical 1% UIS + R g Tested
More informationFeatures. N-Channel Enhancement Mode MOSFET 25V/60A, R DS(ON) =10V
N-Channel Enhancement Mode MOSFET Features Pin Description 25V/6, R DS(ON) =4.5mΩ (typ.) @ V GS =V R DS(ON) =7.5mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green
More informationFeatures. General Description. Applications. 8-PIN Synchronous Buck PWM Controller
8-PIN Synchronous Buck PWM Controller Features General Description Operating with Single 5V or 1V Input Drives N-Channel MOSFETs Simple Single-Loop Control Design - Voltage-Mode PWM Control - Full 0% to
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-68A, R DS(ON) =-10V = V GS. = 9mW(max.
P-Channel Enhancement Mode MOSFET Features -3V/-68, R DS(ON) = 9mW(max.) @ V GS =-V R DS(ON) = 5mW(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) HBM ESD
More informationN-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET Features Pin Description 25V/5, R DS(ON) =8.5mΩ (typ.) @ V GS =1V R DS(ON) =15mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design valanche Rated Reliable and Rugged Lead
More informationPackage Code. Handling Code. Assembly Material
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4.6, R DS(ON) = 48mW (Max.) @ V GS =-4.5V R DS(ON) = 7mW (Max.) @ V GS =-2.5V R DS(ON) =mw (Max.) @ V GS =-.8V Reliable and Rugged Lead Free
More informationSM1A16PSU/UB. Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -100V/-13A, R DS(ON) =-10V
P-Channel Enhancement Mode MOSFET Features Pin Configuration -0V/-13A, R DS(ON) =205mΩ (max.) @ V GS =-V R DS(ON) =300mΩ (max.) @ V GS =-4V Reliable and Rugged D S G S D G Lead Free and Green Devices Available
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 20V/6A, R DS(ON) =10V =30mW V GS. =25mW (max.
SM23NS N-Channel Enhancement Mode MOSFET Features Pin Description 2V/6, R DS(ON) =25mW (max.) @ =V R DS(ON) =3mW (max.) @ =4.5V R DS(ON) =4mW (max.) @ =2.5V R DS(ON) =6mW (max.) @ =.8V D G S Reliable and
More informationAME. Low Dropout 2A CMOS Regulator AME8882. n General Description. n Typical Application. n Features. n Functional Block Diagram.
8882 n General Description n Typical Application The 8882A/B family of positive CMOS linear regulators provides ultra low-dropout voltage (240mV @2A) and low quiescent current (typically 600uA), thus making
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4A, 6V, 380kHz, Asynchronous Step-Down Converter Features Wide Input Voltage from 4.5V to 6V Output Current up to 4A Adjustable Output Voltage from 0.8V to 90% - 0.8V Reference Voltage -.5% System Accuracy
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/B GENERAL DESCRIPTION The and B are integrated typically 100mΩ power switch for self-powered and bus-powered Universal Series Bus (USB) applications. The and B integrate programmable current limiting
More informationV IN GND V OUT GND GND VIN
Low I Q, Low Dropout 900mA Fixed Voltage Regulator Features Low Noise : 50µV RMS (100Hz to 100kHz) Low Quiescent Current : 50µA (No load) Low Dropout Voltage : 210mV (@900mA) Very low Shutdown Current
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/4.7A, R DS(ON) =10V V GS. =40mW(max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/4.7, R DS(ON) =4mW(max.) @ V GS =V R DS(ON) =6mW(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant)
More informationRT9059A. 3A, Ultra-Low Dropout Voltage Regulator. General Description. Features. Applications. Ordering Information. Marking Information
RT9059A 3A, Ultra-Low Dropout Voltage Regulator General Description The RT9059A is a high performance positive voltage regulator designed for use in applications requiring very low input voltage and very
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RT9059 3A, Ultra-Low Dropout Voltage Regulator General Description The RT9059 is a high performance positive voltage regulator designed for use in applications requiring very low input voltage and very
More informationPackage Code. Handling Code Temperature Range. Assembly Material
Step-Up Converter for 4 Series White LEDs Driver Features General Description.5 V to 6V Input Voltage Range 400mA Internal Switch Current Up to MHz Switching Frequency 70mA Typical No Load Quiescent Current
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/16A, R DS(ON) =10V
N-Channel Enhancement Mode MOSFET Features Pin Description 1V/16, R DS(ON) = 1mW (max.) @ V GS =1V R DS(ON) = 17mW (max.) @ V GS =4.5V ESD Protected Reliable and Rugged Lead Free and Green Devices vailable
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More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-9.3A, R DS(ON) =-10V = V GS. = 24mW(max.
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More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -20V/-12.2A, R DS(ON) =-4.5V =-2.5V. = 14mW(max.
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-12.2, = 14mW(max.) @ V GS =-4.5V = 2mW(max.) @ V GS =-2.5V = 32mW(max.) @ V GS =-1.8V Reliable and Rugged Lead Free and Green Devices vailable
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/8A, R DS(ON) = 10V. = V GS = 4.5V Reliable and Rugged
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More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -60V/-15A, R DS(ON) =-10V
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More informationSM7320ESQG. Features. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET. Channel 1 30V/64A, R DS(ON) = 2.5mΩ (max.
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N-Channel Enhancement Mode MOSFET Features Pin Description 30V/4.8A R DS(ON) =31.2mΩ(max.)@V GS =10V R DS(ON) =54.6mΩ(max.)@V GS =4.5V D S Reliable and Rugged Lead Free and Green Devices Available (RoHS
More information