FACTOR: first results on SiPM characterization

Transcription

1 FACTOR: first results on SiPM characterization Valter Bonvicini INFN Trieste OUTLINE: 1. Motivations and program of the FACTOR project 2. Types of devices tested, measurements performed and set-up used 3. Results 4. Forthcoming activity 1

2 1.1 The FACTOR project: motivations Strong interest both for the development of the device and for future (close) applications to (but not only) read-out of fiber calorimeters in HEP and to future space experiments for UHECR detection. Proposal submitted to INFN Group V in Sept Participants: INFN Sections of Trieste, Udine and Messina, ~ 7 FTE Foreseen duration: 3 yrs ( ) Collaboration with ITC-IRST (Trento, Italy) The project focuses on two complementary objectives: 1. Development of SiPMs; 2. Study of future applications: a. Fiber calorimetry, readout of wls fibers in large area scintillators b. Detection of UHECR c. FEL 2

3 1.2 FACTOR activity plan 2007: mainly dedicated to device characterization and test: Comparison of SiPM characteristics produced by different manufacturers; Measurements of SiPM characteristics as a function of T; Irradiation of the devices and study of radiation damage effects; Tests with SiPMs coupled to wls fibers for scintillator read-out. Energy and time resolution measurements; Study of optimal packaging, electronics placement, etc. 3

4 2.1 Types of SiPM under test At the moment, we are performing tests on SiPMs from 3 different sources: Forimtech (MRS): 1 mm 2 in TO18 - λ P 560 nm µcells 43x43 µm 2 Photonique (MRS): GR sensitive - 1 mm 2 in TO µcells ~ 43x43 µm 2 Blue sensitive - 1 mm 2 in TO µcells ~ 43x43 µm 2 Blue sensitive mm 2 on PCB µcells ~ 50x50 µm 2 Blue enhanced 9 mm 2 in TO µcells ~ 33x33 µm 2 IRST (polysilicon), 1 mm 2 - λ P 420 nm (devices from 2 nd and 3 rd batch) 625 µcells, 40x40 µm 2 4

5 2.2 Tests performed so far Device characterization: Static measurements (I-V characteristics, capacitance) Dynamic measurements in dark (signal shape and amplitude, dark count, gain) Measurements of Dark count and V BD vs T Preliminary tests with SiPM coupled to scintillators: Readout of a 1 m long polystyrene sci bar on a 120 GeV p beam at FNAL with wls fiber coupled to IRST SiPMs 5

6 2.3 Fast amplifier for SiPM readout Amplifier used for fast characterization of SiPMs: Agilent ABA GHz RFIC Amplifier (economic, compact, internally 50-Ω matched, gain ~ 20 db) Dimensions 1.8 x 1.8 mm 2 6

7 RFIC SiPM in TO18 7

8 2.5 Amplifier characterization - 1 Gain = 18 db ( 8) Gain vs frequency, sweep 10 MHz 1.8 GHz 8

9 2.6 Amplifier characterization - 2 Measured f L (-3 db) 10 MHz 9

10 2.7 Amplifier characterization - 3 Orange trace: input from pulse generator, FWHM = 0.9 ns, t r = t f = 300 ps Red trace: amplifier s output 10

11 2.8 Amplifier characterization - 4 t r ~ 280 ps t f ~ 2.2 ns Forimtech F1, ΔV ~ 4 V 11

12 3.1 Static measurements - 1 1µ 100n IRST 00 IRST 02 IRST 08 IRST 11 IRST 03 IRST devices type C (standard process) from 2 nd batch Current (A) 10n 1n SiPM Vbd (V) Ibd (na) IRST-00 32,5 3,6 IRST-02 33,0 3,6 IRST-03 33,0 3,1 IRST-08 33,5 3,2 IRST-11 33,5 3,8 100p reverse Voltage (V) 12

13 3.1 Static measurements - 2 Current (A) 100µ 10µ 1µ 100n 10n Blue enhanced 3x3 SiPM PHOT 18 PHOT 19 PHOT 20 Photonique 9 mm 2 Blue sensitive SiPM Vbd (V) Ibd (na) Phot-18 52,5 125,8 Phot-19 49,5 260,6 Phot-20 49,0 98,7 Phot-21 51,0 6,5 Phot-22 53,0 6,9 Phot-23 55,0 6,0 1n reverse Voltage (V) Photonique 1 mm 2 Green-red sensitive 13

14 3.1 Static measurements - 3 3,0m 1,8m 1,6m 1,4m 1,2m IRST 00 IRST 02 IRST 03 IRST 08 IRST 11 2,5m 2,0m Phot 18 Phot 19 Phot 20 Current (A) 1,0m 800,0µ 600,0µ 400,0µ current (A) 1,5m 1,0m 200,0µ 500,0µ 0,0-200,0µ -0,2 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 direct Voltage (V) 0, direct Voltage (V) DEVICE R q, kω DEVICE R q, MΩ IRST Phot 18 (9 mm 2 ) 18.5 IRST Phot 19 (9 mm 2 ) 12.3 IRST Phot 20 (9 mm 2 ) 10 IRST Phot 21 (1 mm 2 ) IRST Phot 22 (1 mm 2 ) 9.7 Phot 23 (1 mm 2 ) 21 14

15 MRS SiPMs have 2.5 to 50 times larger R q values than IRST (polysilicon) devices effective quenching, but longer recovery rimes Forimtech F1, Rq 0.9MΩ Recovery time 400 ns 15

16 3.2 Dynamic measurements in dark - 1 Dark count, Forimtech 1 mm 2 Dark count rate, MHz F5 F4 F3 F2 F1 1 mm 2 MRS devices VBD 20 V D.C.(ΔV=2V) 2 MHz Dark count, Forimtech 1 mm Vbias, V Dark count rate, MHz F5 F4 F3 F2 F Bias voltage, V 16

17 3.2 Dynamic measurements in dark - 2 Dark count, Photonique GR 1mm Dark count, MHz PHGR1 1 mm 2 MRS device VBD 41 V D.C.(ΔV=2V) 2.2 MHz Bias voltage, V 17

18 3.2 Dynamic measurements in dark - 3 Dark count, Photonique BL 1mm 2 Dark count, MHz Bias voltage, V PHBL2 PHBL1 Dark count, Photonique BL 4.4 mm 2 Dark count, MHz Bias voltage, V PHBPCB1 PHBPCB2 PHBPCB3 18

19 3.2 Dynamic measurements in dark - 4 Dark count IRST_A1 Dark count, MHz A1 Bias voltage, V Dark count IRST_A1 Linear fit intercept with V-axis gives V BD = V Dark count, MHz y = 0.722x R 2 = Linear D.C. Lin. fit Bias voltage, V 19

20 3.2 Dynamic measurements in dark - 5 IRST, Dark count (room T) Dark count, MHz Overvoltage, V A1 B1 B2 D1 D2 type A, D.C.(ΔV=2V) 1.5 MHz type B, D.C.(ΔV=2V) 2-3 MHz type D, D.C.(ΔV=2V) 1 MHz 20

21 3.3 Temperature effects - 1 Measurements performed with the DUT in a climatic chamber (with humidity control) The amplifier was located outside the chamber, connection via a special 18 GHz f t 50 Ω cable. IRST_A1 Signal amplitude, mv Bias voltage, V Breakdown voltage, V C 40C 30C 20C 10C 0C Linear (0C) Linear (10C) Linear (20C) Linear (30C) Linear (40C) Linear (50C) IRST_A1 V BD vs T y = x VBD vs T Linear (VBD vs T) dv BD /dt 78 mv/c Temperature, C 21

22 3.3 Temperature effects - 2 IRST_D1 Signal amplitude, mv Bias voltage, V dv BD /dt 72 mv/c Breakdown voltage, V C 40C 30C 20C 10C 0C Linear (50C) Linear (40C) Linear (30C) IRST_D1, VBD vs T Linear (20C) Linear (10C) Linear (0C) y = x Temperature, T VBD vs T Linear (VBD vs T) 22

23 3.3 Temperature effects - 3 IRST_D1, Dark count Dark count, MHz Overvoltage, V Dark count 0C Dark count 10C Dark count 20C Dark count 30C Dark count 40C Dark count 50C 23

24 3.4 Preliminary beam test - 1 Visual inspectons and dynamic tests at prior to use of SiPMs in Test Beam yielded results compatible with IRST measurements: V BD = 34.1 V Gains between ~1 and 2 x 10 6 Dark ΔV = 2V: ~ 1 MHz dark count vs. bias 24

25 T956 neutron counter arrays 3.4 Preliminary beam test - 2 Counter readout on both ends by SiPMs Beam (12 GeV protons)@fnal Bias = -36V (ΔV=2V) Data with 120 GeV proton - beam N p. e. ε = 99% N d. c. 6.5 p. e. 1.5MHz G

26 4 Forthcoming activity The experimental activity of FACTOR started this year and is actively under way in Ts, Ud and Me. Within 2007 we plan to: Complete the measurements vs T currently under way; Extend test activity also to SiPMs from other producers (Hamamatsu, Sensel, ); Start irradiation tests of Sincrotrone Trieste; Further improve the amplifier s characteristics; Study improvements in packaging, fiber coupling, PCBs ; Start dynamic measurements with laser; Equip with ~ 100 IRST SiPMs a full plane of scintillators for the T956 neutron counter FNAL. 26