IRST SiPM characterizations and Application Studies

Transcription

1 IRST SiPM characterizations and Application Studies G. Pauletta for the FACTOR collaboration Outline 1. Introduction (who and where) 2. Objectives and program (what and how) 3. characterizations 4. Applications 28 June 2007 G. Pauletta: PD07, Kobe, Japan 1

2 FACTOR 3-year project ( ) funded by INFN Participants: INFN laboratories and/or universities at:trieste, Udine, Messina collaborating with ITC (now Bruno Kessler Foundation) -IRST Trento, Italy Background: 2005: INFN funds project (DASiPM) for the development of SiPM devices, mainly for PET application 2007: INFN funds continuation of DASIPM and expands development to other applications (FACTOR) INFN-Trieste has a long standing collaboration with IRST in the development of Silicon-based detectors for application in accelerator, underground and space based experimental particle physics. 28 June 2007 G. Pauletta: PD07, Kobe, Japan 2

3 Motivations The FACTOR collaboration interested in the development of the device and in its optimization for application to: Present application interests: Calorimetry with fiber-based optical readout Large area scintillator based muon counters Scintillating fiber based tracking future space experiments for detection of UHECR FEL studies and instrumentation future large area, ground based x-ray telescopes Action Plan: comparative studies for detailed understanding of device characteristics Application tests Optimization of properties as a function of application 28 June 2007 G. Pauletta: PD07, Kobe, Japan 3

4 Present IRST technology* *C. Piemonte A new Silicon Photomultiplier structure for blue light detection NIMA 568 (2006) 20 n + p 7E+05 Shallow-Junction SiPM n+ π epi Doping conc. (10^) [1/cm^3] Doping Field 6E+05 5E+05 4E+05 3E+05 2E+05 1E+05 E field (V/cm) p+ subst depth (um) 0E+00 Distinguishing characteristics: 1) Very shallow junction 2) ARC optimized for short wavelenghts (~400nm) 3) polysilicon quenching resistors 28 June 2007 G. Pauletta: PD07, Kobe, Japan 4

5 Development History Development started at the beginning of 2005 Baseline geometry 1mm SiPM structure: - 25x25 cells - microcell size: 40x40mm 2 1mm Development has continued over last two years: several succeeding production runs to to develop geometries for different applications and to optmize operational characteristics Geometry of baseline model NOT optimized formaximum PDE ( fill factor ~20%). 28 June 2007 G. Pauletta: PD07, Kobe, Japan 5

6 Principal characteristics of interest Gain Noise dark count afterpulsing optical cross-talk PhotoDetection Efficiency (PDE) Dynamic Range Time characteristics rise time, resolution, recovery time Radiation hardness Sensitivity to magnetic fiels Packaging Readout electronics Other considerations 28 June 2007 G. Pauletta: PD07, Kobe, Japan 6

7 Device characterization 1,2 Static measurents: IV measurements for rapid test of device properties, uniformity and stability Dynamic tests: Output signal characterization and stability using noise signals in the dark Signal rise time and fall time Gain Dark count Optical cross talk Afterpulsing PhotoDetection Efficiency 1)All characterizations reported here are for 1mm 2 devices 2) for a thorough characterization of the first SiPM prototypes fabricated at ITC-irst see C. Piemonte, IEEE TNS, February June 2007 G. Pauletta: PD07, Kobe, Japan 7

8 Current (A) Static measurements-1 1µ 100n 10n 1n 100p I bd IRST 00 IRST 02 IRST 08 IRST 11 IRST 03 Baseline version reverse Voltage (V) SiPM Vbd (V) Ibd (na) IRST-00 32,5 3,6 IRST-02 33,0 3,6 IRST-03 33,0 3,1 IRST-08 33,5 3,2 IRST-11 33,5 3,8 V BD I tot I leak Rapid check functionality & uniformity IRST 1mm 2 second batch Sensitive to principal characteristics dark current is prop. to gain G and since I I I dc I and dark count G. G V, dc dc = V tot 2 I leak ( DC) IRST devices generally very uniform DC V ( DC) 28 June 2007 G. Pauletta: PD07, Kobe, Japan 8

9 Static measurements-2 100µ 10µ Blue enhanced 3x3 SiPM PHOT 18 PHOT 19 PHOT 20 10µ 1µ blue enhanced 1x1 SiPM PHOT 21 PHOT 22 PHOT 23 Current (A) 1µ 100n Current (A) 100n 10n 10n 1n 1n reverse Voltage (V) 100p SiPM Vbd (V) Ibd (na) Phot-18 52,5 125,8 Phot-19 49,5 260,6 Phot-20 49,0 98,7 Phot-21 51,0 6,5 Phot-22 53,0 6,9 Phot-23 55,0 6, reverse Voltage (V) Photonique 9mm 2 Blue sensitive Photonique 1mm 2 Green-red sensitive 28 June 2007 G. Pauletta: PD07, Kobe, Japan 9

10 Current (A) Static measurements-3 1,8m 1,6m 1,4m 1,2m 1,0m 800,0µ 600,0µ 400,0µ 200,0µ 0,0 IRST 00 IRST 02 IRST 03 IRST 08 IRST 11 Current (A) 250,0µ 200,0µ 150,0µ 100,0µ 50,0µ 0,0 Phot 21 Phot 22 Phot ,0µ -0,2 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 direct Voltage (V) direct Voltage (V) SiPM Rq (Ohm) IRST IRST IRST IRST IRST kΩ IRST 1mm 2 second batch SiPM Rq (kohm) Phot-18 2,29 Phot-19 1,52 Phot-20 1,24 Phot-21 39,8 Phot-22 17,4 Phot-23 37,8 Photonique 9mm 2 Blue sensitive Photonique 1mm 2 Green-red sensitive 28 June 2007 G. Pauletta: PD07, Kobe, Japan 10

11 Capacitance (F) 450,0p 400,0p 350,0p 300,0p 250,0p 200,0p 150,0p IRST 00 IRST 02 IRST 03 IRST 08 IRST 11 Capacitance (F) 90,0p 85,0p 80,0p 75,0p 70,0p 65,0p 60,0p Static measurements-4 Photo 21 Photo 22 Photo ,0p 55,0p 50,0p 50,0p 0, reverse Voltage (V) 45,0p reverse Voltage (V) SiPM Vdep (V) Cdep (pf) IRST IRST IRST IRST IRST ff 28 June 2007 G. Pauletta: PD07, Kobe, Japan 11

12 dynamic measurements-1 Amplifier used for fast characterization of SiPMs: Agilent ABA GHz RFIC Amplifier (economic, compact, internally 50-Ω matched, gain ~ 20 db) Dimensions 1.8 x 1.8 mm2 Orange trace: input from pulse generator, FWHM = 0.9 ns, tr = tf = 300 ps Red trace: amplifier s output 28 June 2007 G. Pauletta: PD07, Kobe, Japan 12

13 dynamic measurements-2 IRST :recovery time ~70 ns Formitech F1: R recovery time 400ns q 0.9 MΩ, MRS SiPMs have 2.5 to 50 times larger Rq values than IRST (polysilicon) devices longer recovery rimes 28 June 2007 G. Pauletta: PD07, Kobe, Japan 13

14 dynamic measurements-4 1 mm 2 type A VBD 33 V D.C.(ΔV=2V) 1.5 MHz Linear fit intercept with V-axis gives VBD = V 28 June 2007 G. Pauletta: PD07, Kobe, Japan 14

15 dynamic measurements-4 1 mm2 MRS devices VBD 20 V D.C.(ΔV=2V) 2 MHz 1 mm2 MRS device VBD 41 V D.C.(ΔV=2V) 2.2 MHz 28 June 2007 G. Pauletta: PD07, Kobe, Japan 15

16 dynamic measurements-5 type A, D.C.(ΔV=2V) 1.5 MHz type B, D.C.(ΔV=2V) 2-3 MHz type D, D.C.(ΔV=2V) 1 MHz 28 June 2007 G. Pauletta: PD07, Kobe, Japan 16

17 dynamic measurements-6 Temperature Dependences - 1 Measurements performed in a climatic chamber (with humidity control) The amplifier was located outside the chamber, connection via a special 18 GHz ft 50 Ω cable dv BD /dt 78 mv/c 28 June 2007 G. Pauletta: PD07, Kobe, Japan 17

18 dynamic measurements-7 Temperature Dependences - 2 dv BD /dt 72 mv/c 28 June 2007 G. Pauletta: PD07, Kobe, Japan 18

19 dynamic measurements-8 Temperature dependences June 2007 G. Pauletta: PD07, Kobe, Japan 19

20 The following are static measurements performed at ITC-IRST and reported on at a recent (June 13 th 2007) workshop at Perugia 28 June 2007 G. Pauletta: PD07, Kobe, Japan 20

21 Signal properties 100ns 100ns 100ns Charge spectra T int =100ns C. Piemonte et al. Characterization of the first prototypes of SiPM fabricated at ITC-irst IEEE TNS, February 2007 Normalized Count T=22 o C s d a -2.0E E E E E+00 Charve (V*s) Well defined peak of the single pulses. Gaussian distribution width determined by: - noise of the system - tiny gain non-uniformities Tails due to: optical cross-talk + afterpulse 28 June 2007 G. Pauletta: PD07, Kobe, Japan 21 C. Piemonte: June 13 th, 2007, Perugia

22 Dark count 31 Gain & Dark count Performed in the climatic chamber. Devices from the third batch 3.0E E E E E E E+00-5 C 5 C 15 C 25 C DC Over-voltage (V) Gain 4.0E E E E E E E E E+00-5 C 5 C 15 C 25 C 2.50E+06 G Ampl Bias voltage (V) E+06 VBD (V) Vbd 1.50E+06 Gain 1.00E+06 y = x + 2E E+05 y = x E Temp. (C) Gain 28 June 2007 G. Pauletta: PD07, Kobe, Japan 22 C. Piemonte: June 13 th, 2007, Perugia

23 Gain & Dark count (uniformity) 3.0E+06 G AMPL 2.5E E+06 Gain 1.5E+06 Dark Count (Hz) 1.0E E E E E E E E E E E E Over-voltage (V) DC Over-voltage (V) Gain and Dark count measured on devices from the same wafer 28 June 2007 G. Pauletta: PD07, Kobe, Japan 23 C. Piemonte: June 13 th, 2007, Perugia

24 Optical cross-talk Short integration time only single/double/.pulses are counted Counts double peak 35.5V 33.5V ΔV = 4.5V 1.5V Number of events with optical cross-talk increases with voltage Cross-talk below 5% at 4V over-voltage. 0-8E E E E E+00 0 QDC Charge (a.u.) 28 June 2007 G. Pauletta: PD07, Kobe, Japan 24 C. Piemonte: June 13 th, 2007, Perugia

25 0.05 After-pulsing Voltage (V) E E E E E-08 Time (s) After-pulse probability vs bias It increases following a parabolic law: P a = linear with Vbias P c P 01 linear with Vbias Afterpulse/pulse Events with after-pulse measured on a single micropixel. The amplitude of the after-pulse increases as the cell recovers to its opertional condition Tint = 60ns Tint = 100ns y = x x y = x x Voltage (V) 28 June 2007 G. Pauletta: PD07, Kobe, Japan 25 C. Piemonte: June 13 th, 2007, Perugia

26 Photo-detection efficiency DC curr with light DC curr. wo light dark pulses light pulses 28 June 2007 G. Pauletta: PD07, Kobe, Japan 26 C. Piemonte: June 13 th, 2007, Perugia

27 PDE (%) PDE 1.60E E E E E E E E E+00 Photodetection efficiency 3.5V 3V 2.5V ΔV=2V Wavelength (nm) short λ: low PDE because avalanche triggered by holes 4V Area efficiency ~ 20% long λ: low PDE because low QE C. Piemonte: June 13 th, 2007, Perugia Measured on a diode 80 by ARC 28 June 2007 G. Pauletta: PD07, Kobe, Japan 27 36V 36.5V 37V 37.5V 38V QE (%) Reduced PDE=QE*Pt*Ae QE=quantum eff. P t =avalanche prob. A e =area eff. QE vs Wavelength 0V -2V Simul Simul ARC Reduced by small epi thickness Wavelength (nm)

28 last batch 1x1mm 2x2mm 3x3mm (3600 cells) 4x4mm (6400 cells) increased fill factor: 40x40mm => 44% 50x50mm => 50% 100x100mm => 76%; Circular (1.2 mm diameter) C. Piemonte: June 13 th, 2007, Perugia Array 28 June 2007 G. Pauletta: PD07, Kobe, Japan 28

29 First signal and noise characteristics of the last devices 3.5E E E E E E E E+00 5C GAIN 5C Dark Coun Noise and charge resolution 1x1mm 2 SiPM with 40x40μm 2 cells 5.0E E E E E E+00 T=5C T=20C 20C GAIN 20C Dark count C. Piemonte: June 13 th, 2007, Perugia 28 June 2007 G. Pauletta: PD07, Kobe, Japan Charge spectra at different Voltages with the same light Intensity (pulsed) 9.5p.e. 8p.e. 6.5p.e. 5p.e. 3.5p.e E E E E+00 Pulse Area (Vs) resolution limited by electronic noise

30 applications 28 June 2007 G. Pauletta: PD07, Kobe, Japan 30

31 Characterization of SiPMs (1 mm 2 from second batch) used for preliminary at Fnal test beam Visual inspectons (SiDet) and dynamic tests at lab 6 prior to use of SiPMs in Test Beam yielded results compatible with IRST measurements: V B = 34.1 V Gains between ~1 and 2 x 10 6 dark count vs. bias 28 June 2007 G. Pauletta: PD07, Kobe, Japan 31

32 Preliminary study of Scint. Strip viewed by IRST SiPM at the FNAL test beam T956 neutron counter arrays Counter readout on both ends by SiPMs Beam (12 GeV protons) Bias = -36V (ΔV=2V) Data with 120 Gev proton - beam N p. e. ε = 99% N d. c. 6.5 p. e. 1.5MHz G June 2007 G. Pauletta: PD07, Kobe, Japan 32

33 T956 neutron counter arrays: 64 scint strips each (read out by wls fiber and MAPMTs) Beam (p,π,e) Future work at fnal Add one plane of scint strips read out by Wls fiber and SiPMs Whole assembly mounted on movable (x,y) support Scintillator strips : 4cm x 1cm x (1 2 m), read out by wls fiber. Groove for fiber extruded with scintillator 28 June 2007 G. Pauletta: PD07, Kobe, Japan 33

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