Atlas 46 novel negative tone photoresist which combines the good properties of the established SU-8 and CAR 44

Transcription

1 EIPBN, 30 th Mai 2018 Atlas 46 novel negative tone photoresist which combines the good properties of the established SU-8 and CAR 44 Dr. Christian Kaiser, Matthias Schirmer Allresist GmbH, Germany

2 Outline Short Introduction of Allresist GmbH Well-established CAR 44 for i-line and g-line Motivation/ Goal New development Atlas S and Atlas R PAG-variation to ensure h-line and g-line sensitivity 3D structures by variation of photoacid generator (PAG) 3D structures via double imprint lithography (University of Wuppertal) Fluorescent Atlas 46 S layers

3 Short Introduction of Allresist GmbH Founded 16th October in 1992, located in Strausberg, Germany Quality management system ISO 9001:2008 and ISO 14001:2004 Since 2006 on the way of business of excellence Global player with competent support (> 50 % export) Full equipment of resist characterization and modern analytic methodes Intense scientific cooperations with universities, institutes and industrial partners 32 scientific projects completed successfully Customer specific, taylor-made resists, short lead times

4 Well-established CAR 44 for i-line and g-line Turbine wheel produced with AR-N , thickness: 100 µm via double coating 3 µm resolution, pattern with AR-N , thickness: 15 µm Vertical profiles, AR-N , thickness: 55 µm Art work, pattern with AR-N Benefits High sensitivity, excellent resolution Suitable for g-line and X-ray as well Excellent properties for galvanic applications, vertical profiles, easy to remove Good plasma etching stability Drawbacks Compared to SU-8 lower stability Highest single layer up to 50 µm, SU-8: 200 µm

5 Motivation / Goal CAR 44 is a high quality negative resist but stability is insufficient for some applications Limitation of well-known SU-8: difficult to remove, low sensitivity at i-line Creating a resist with good properties similar to SU-8 with higher sensitivty at i-line and easy to remove Herein we like to present different versions of new Atlas 46: AR-N (Atlas 46 S) properties very similar to SU-8 (plug&play resist) AR-N (Atlas 46 R) removable resist version (e.g. for galvanic applications) SX AR-N /1 version with significantly enhanced sensitivity at i-line SX AR-N /1 h/g-line sensitive (e.g. for two-layer applications)

6 New development: Atlas 46 S / Atlas 46 R Suitable for applications with layers which need to remain permanently & resistively on substrate Sensitivity (broad band UV) 120 mj/cm² Depending on exposure dosage and PEB individually adjustable removability Sensitivity (broad band UV) 140 mj/cm² Resist thicknesses: 5 µm up to 200 µm (single coating step, temperature ramp recommended for thicker layers) Tg: 35 C 45 C, thermal stability (cross-linked): up to 300 C Developers for Atlas 46 S; strong: AR , weak: AR Developers for Atlas 46 R; strong: AR , weak: AR

7 New development: Atlas 46 S and Atlas 46 R Atlas 46 S: 40 s exposure, 5 95 C PEB hotplate, 60 s AR , (university of Halle) Atlas 46 R: 100 s exposure, 5 95 C PEB hotplate, 60 s AR (university of Halle) Resist thickness vs. solid content Correlation between film thickness and solid content comparable to SU-8 Well-defined line pattern with vertical walls

8 PAG-variation to ensure h-line and g-line sensitivity Red line: SX AR-N /1, enhanced i-line sensitivity (PAG3) Blue line: mercury lamp spectra PAG4 in SX AR-N /1 for h-/g-line sensitivity Atlas S/R and SU-8 relative low sensitivity at i-line (365nm) New PAG s suitable to enhance sensitivity at i-line: SX AR-N /1 PAG 4, for the first time h-/g-line (405 nm/436 nm) sensitivity established SX AR-N /1 provides access to new applications for 3d-patterning

9 3D structures by variation of PAG General process: substrate substrate substrate substrate substrate Coating layer 1, Soft bake Exposure 1 Cross-linking (PEB) Coating layer 2, Soft bake Exposure 2 Cross-linking (PEB) development First results for 2-layer system trenches; bottom: AR-N , top: SX AR-N /1 (i-line sensitive) First results for 2-layer system, trenches; bottom: SX AR-N , top: SX AR-N /1 (h-line / g-line sensitive) Atlas 46 S on bottom, SX AR-N /1 or SX AR-N /1 on top No significant intermixing between the different resists Combination of different resist versions allows generation of 3d architectures (e.g. bridged structures)

10 3D structures via double imprint lithography (University of Wuppertal) Process sequence suitable for different negative photoresists: a) definition of nano-structures in a negative tone photoresist via thermal imprint b) surface-near VUV flood exposure of the pre-patterned surface c) second imprint with microstructures Comparison NIL properties of SU-8, Atlas 46 S and CAR 44 - Double imprint lithography allowed a combination of nano- and micro structures - Requirement of different chemically amplified photoresists for pre-preparation of hierarchical structures: hardened nanostructures are most stable during second imprint - Comparable nanostructure stability between SU-8 and Atlas 46 S - Insufficient thermal stability with CAR [1] C. Steinberg; M. Papenheim; S. Wang; H.-C. Scheer, Microelectronic Engineering, 2016, 155, [2] C. Steinberg; M. Rumler; M. Runkel; M. Papenheim, S. Wang, A. Mayer; M. Becker; M. Rommel; H.-C. Scheer, Microelectronic Engineering, 2017, 176,

11 Fluorescent Atlas 46 S layers Different fluorescent layers of Atlas 46 S Various brilliant fluorescence dyes embedded in polymer matrix Suitable for photo resists (Atlas 46 S) and as well for ebeam resists (PMMA, CSAR 62) Lithographic application allow generation of fluorescent pattern (e.g. for microscopy) Multi-layer process for combination of different dyed architectures: overlapping or adjacent pattern Two different path ways: a) combination of ATLAS 46 versions optimized for different exposure wavelengths b) processing bottom layer (spin coating, exposure, PEB and development) following by patterning a top resist showing a different fluorescence Different fluorescence of the AR-Logo & lines (Atlas 46 S)

12 Many thanks for your attention!