NA Silicon Wafer Committee Meeting Summary and Minutes

Transcription

1 NA Silicon Wafer Committee Meeting Summary and Minutes Next Committee Meeting July 13, 2010 SEMICON West, San Francisco, CA NA Spring Meetings March 30, 2010, 13:30 16:30 Intel, Santa Clara, CA Table 1 Meeting Attendees Co-Chairs: Dinesh Gupta (Semiconductor Technology and Applications), Noel Poduje (Semiconductor Metrology and Standards) SEMI Staff: James Amano Company Last First Company Last First Materials and Metrology Bullis Murray MEMC Zimmerman Jeremy SEMATECH Ferrell Jackie Wagner Peter KLA-Tencor Yoshise Masanori Intel Goldstein Michael SEMI Okuda Ken Silicon Solar Perroots Len SEMI Trio Paul Attachments from this meeting can be found on the SEMI Web site at: Table 2 Leadership Changes None Table 3 Ballot Results (or move to Section 4, Ballot Review) Passed ballots and line items will be submitted to the ISC Audit & Review Subcommittee for procedural review. Failed ballots and line items were returned to the originating task forces for re-work and re-balloting. Document # Document Title Committee Action 4624B New Standard: Specification for Developmental 450 mm Diameter Polished Single Passed Crystal Silicon Wafers Reapproval of SEMI MF Test Method For Measuring Surface Sodium Passed 4914 Aluminum Potassium And Iron On Silicon And Epi Substrates By Secondary Ion Mass Spectrometry 4915 Reapproval of SEMI MF Test Method for Measuring Nitrogen Concentration Failed in Silicon Substrates by Secondary Ion Mass Spectrometry 4916 Withdrawal of SEMI MF399-00a Test Method For Thickness Heteroepitaxial Or Passed Polysilicon Layers Table 4 Authorized Ballots ***Cycles 3 and *** Document # Document Title Task Special Condition 4813 Revision of SEMI M Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130 nm to 22 nm International Advanced Wafer Geometry Task NA Silicon Wafer Committee 1 March 30, 2010

2 4915A Technology Generations Reapproval of SEMI MF Test Method for Measuring Nitrogen Concentration in Silicon Substrates by Secondary Ion Mass Spectrometry Withdrawal of SEMI M , Specification for Silicon-on- Insulator (SOI) Wafers for CMOS LSI Applications Revision of SEMI M , Terminology for Silicon Technology and the following standards: SEMI M , SEMI M , SEMI M e, SEMI MF , SEMI MF , AND SEMI MF Revision to SEMI M SPECIFICATION FOR POLYCRYSTALLINE SILICON Revision to SEMI M GUIDE FOR A UNIVERSAL WAFER GRID Revision to SEMI M PRACTICE FOR ESTABLISHING A WAFER COORDINATE SYSTEM Withdrawal of SEMI M GUIDE FOR EVALUATING CHEMICAL-MECHANICAL POLISHING PROCESSES ON FILMS ON UNPATTERNED SILICON SUBSTRATES Revision to SEMI M GUIDE FOR ASSIGNING ADDRESSES TO RECTANGULAR ELEMENTS IN A CARTESIAN ARRAY Revision to SEMI MF TEST METHOD FOR SHEET RESISTANCE UNIFORMITY EVALUATION BY IN-LINE FOUR-POINT PROBE WITH THE DUAL-CONFIGURATION PROCEDURE Revision to SEMI MF PRACTICE FOR DETERMINATION OF UNIFORMITY OF THIN FILMS International Terminology Task International Terminology Task All relevant specifications for 200 and 150 mm wafers for LSI applications are included in the recently published M Document 4817 will cover only the terminology issues in a single line item. The task force will work with the GOI Task to revise the document along with SEMI M60 NA Silicon Wafer Committee 2 March 30, 2010

3 ON SILICON WAFERS Revision to SEMI MF TEST METHOD FOR PHOTOLUMINESCENSE ANALYSIS OF SINGLE CRYSTAL SILICON FOR III-V IMPURITIES Revision to SEMI MF PRACTICE FOR ANALYSIS OF CRYSTALLOGRAPHIC PERFECTION OF SILICON INGOTS Revision to SEMI MF PRACTICE FOR ANALYSIS OF CRYSTALLOGRAPHIC PERFECTION OF SILICON WAFERS Revision to SEMI MF PRACTICE FOR DETECTION OF OXIDATION INDUCED DEFECTS IN POLISHED SILICON WAFERS Revision to SEMI MF GUIDE FOR SELECTION AND USE IF ETCHING SOLUTIONS DELINEATE STRUCTURAL DEFECTS IN SILICON Revision to SEMI MF TEST METHOD FOR COUNTING PREFERENTIAL ETCHED OR DECORATED SURFACE DEFECTS IN SILICON WAFERS Revision to SEMI MF TEST METHODS FOR ANALYZING ORGANIC CONTAMINANTS ON SILICON WAFER SURFACES BY THERMAL DESORPTION GAS CHROMATOGRAPHY Note: SNARFs and TFOFs are available for review on the SEMI Web site at: Table 4 New Action Items Item # Assigned to Details 01 Kevin Nguyen (SEMI) Kevin Nguyen to include reapproval ballot for SEMI MF TEST METHOD FOR MEASURING NITROGEN CONCENTRATION IN SILICON SUBSTRATES BY SECONDARY ION MASS SPECTROMETRY in Cycle NA Silicon Wafer Committee 3 March 30, 2010

4 Table 4 New Action Items Item # Assigned to Details 02 Kevin Nguyen (SEMI) Kevin Nguyen (SEMI) to issue revision ballots for M16, M17, M20, M21, MF 1529, MF 1618, MF 1389, MF 1725, MF 1726, MF 1727, MF 1809, MF 1810, MF Kevin Nguyen (SEMI) Kevin Nguyen to contact KLA-Tencor with request for Letter of Assurance Murray Bullis Murray Bullis and Kevin Nguyen to investigate potential patent issues related to (Materials and Metrology), Kevin ESFQR in M1. Nguyen (SEMI) Test Method TF Test Method TF to further consider US , US , and JP and MF1708 and MF1723 and report their findings to the Silicon Wafer Committee at SEMICON West. 06 Kevin Nguyen (SEMI) Kevin Nguyen to issue a withdrawal ballot for M47 in Cycle Table 5 Previous Meeting Action Items Item # Assigned to Details Murray Bullis (Materials and Metrology) Kevin Nguyen (SEMI) Murray to inform appropriate task force leaders to place outstanding standards for 5 year review on their meeting agendas CLOSED Kevin Nguyen to make sure the AWG attendee list is accurate and to circulate latest copy of doc. 3335D for comment and meeting minutes among AWG TF members. CLOSED 1 Welcome, Reminders, and Introductions Committee Co-Chair Noel Poduje called the meeting to order at 13:35. The meeting reminders on antitrust issues, intellectual property issues and holding meetings with international attendance were reviewed. Attendees introduced themselves. Attachment: Required Elements July 9, 2009 rev 4.ppt 2 Review of Previous The committee reviewed the minutes of the previous meeting. Motion: To approve the minutes as written. By / 2 nd : Murray Bullis (Materials and Metrology)/Michael Goldstein (Intel) Vote: 7-0 Attachment: MinSiWfr1109.doc NA Silicon Wafer Committee 4 March 30, 2010

5 3 Liaison Reports 3.1 Europe Silicon Wafer Committee Peter Wagner reported. Of note: M : Test Method for Determining Wafer Flatness Using the Moving Average Qualification Metric Based on Scanning Lithography, a Preliminary Standard, expired in March The EU TC will next meet during Intersolar (Munich, Germany) in June Attachment: EU_Silicon_Wafer_Liaison_ ppt 3.2 Japan Silicon Wafer Committee Ken Okuda (SEMI Japan) reported for the Japan Silicon Wafer Committee. Of note: Two recent ballots were approved by the committee but failed subsequent procedural review. o Doc.#4624A, New Standard: Specification for Developmental 450 mm Diameter Polished Single Crystal Silicon Wafers 4624B will be adjudicated at today s meeting o Doc.#4635B, Revision of M (Preliminary): Practice for Determining Wafer-Near-Edge Geometry Using Roll-Off Amount, ROA As M69 had expired, the revision ballot was a procedural violation. A ballot for a New Standard will be issued in Cycle 3. Attachment: JP_SW_NA Spring Meetings 2010.ppt 3.3 SEMI Staff Report Paul Trio (SEMI) presented. Of note: SEMICON West 2010 July in San Francisco, California NA Standards Fall 2010 Meetings To be held in early November, in San Jose, California or offsite by companies able to host entire meeting set Attachment: NA Staff Report (Spring 2010) Wed_Thu.ppt 4 Ballot Review 4.1 Document 4624B: New Standard: Specification For Developmental 450 Mm Diameter Polished Single Crystal Silicon Wafers This document passed committee review as balloted. Refer to the below attachment for the details of ballot adjudication. Motion: Document 4624B has passed committee review as balloted, and will be forwarded to the A&R Subcommittee for procedural review By / 2 nd : Murray Bullis (Materials and Metrology)/Dinesh Gupta (STS) Attachment: 4624B.doc NA Silicon Wafer Committee 5 March 30, 2010

6 4.2 Document 4914: Reapproval of SEMI MF Test Method For Measuring Surface Sodium Aluminum Potassium And Iron On Silicon And Epi Substrates By Secondary Ion Mass Spectrometry This document passed committee review as balloted. Refer to the below attachment for the details of ballot adjudication. Motion: Document 4914 has passed committee review as balloted, and will be forwarded to the A&R Subcommittee for procedural review By / 2 nd : Dinesh Gupta (STS)/Len Peroots (Silicon Solar) Attachment: 4914B.doc 4.3 Document 4915 Reapproval of SEMI MF Test Method for Measuring Nitrogen Concentration in Silicon Substrates by Secondary Ion Mass Spectrometry An incorrect ballot was posted to the Web for voting, as described in Tetsuya Nakai s (SUMCO) negative: The title of Document 4915 (Test Method for Measuring Nitrogen Concentration in Silicon Substrates by Secondary Ion Mass Spectrometry) is inconsistent with SEMI MF (Practices for Monitoring Non-Contact Dielectric Characterization Systems Through Use of Special Reference Wafers). The ballot was intended to reapprove SEMI MF rather than SEMI MF Motion: To find Tetsuya Nakai s (SUMCO) negative related and persuasive. By / 2 nd : Dinesh Gupta (STS)/Murray Bullis (Materials and Metrology) Motion: To issue a ballot for 4915A (Reapproval of SEMI MF ) in Cycle By / 2 nd : Dinesh Gupta (STS)/Mike Goldstein (Intel) Action Item: Kevin Nguyen (SEMI) to include reapproval ballot for SEMI MF TEST METHOD FOR MEASURING NITROGEN CONCENTRATION IN SILICON SUBSTRATES BY SECONDARY ION MASS SPECTROMETRY in Cycle Attachment: Si Wafer cycle 2 ballot result.doc 4.4 Document 4916: Withdrawal of SEMI MF399-00a Test Method For Thickness Heteroepitaxial Or Polysilicon Layers This document passed committee review. Refer to the below attachment for the details of ballot adjudication. Attachment: 4916.doc 5 Subcommittee & Task Reports mm Task Mike Goldstein (Intel ). The main focus of the TF has been on 4624B, adjudicated by the committee at today s meeting. At the TF s next meeting in SEMICON West, the TF will review the updated drawing of edge profile in the Related Information of 4624B, and also review parameter tables to see if changes are required The TF will also plan for including a 450mm prime wafer spec in M1. Attachment: 450mm TF spring 10 report to silicon committee.ppt NA Silicon Wafer Committee 6 March 30, 2010

7 5.2 Int l Epitaxial Wafer TF Dinesh Gupta reported. The TF is working on a revision to M62: Specification for Silicon Epitaxial Wafers Discussions were held on a draft table for EPI for 22 nm technology. Several responses were received from Intel, IBM, SUMCO, MEMC, Siltronic, and other companies. Based on discussion, the table and table notes will be revised and the revised table will be presented at the next meeting for further consideration. Attachment: MinEpiTF0310 v2.doc 5.3 Int l Polished Wafer TF Murray Bullis reported. The BMD test method developed in Japan has been completed as JEITA EM 3508, and these BMD requirements need to be added to SEMI M1. Motion: To approve a SNARF to revise M1 to include BMD requirements. By / 2 nd : Mike Goldstein (Intel)/Murray Bullis (Materials and Metrology) The Photovoltaic Committee has developed a definition for ingot that is broader than the one currently in M59. Motion: To approve a SNARF to revise M59 to update the definition of ingot in M59. By / 2 nd : Murray Bullis (Materials and Metrology)/ Mike Goldstein (Intel) Attachment: PW Minutes.ppt 5.4 Advanced Wafer Geometry TF Noel Poduje reported. The TF met earlier in the day to contact a preliminary review of 3335D: New Standard: Guide For Determining Nanotopography Of Unpatterned Silicon Wafers For The 130 Nm To 22 Nm Generations In High Volume Manufacturing o 3335D received a single negative, from John Valley, who agreed to withdraw the negative following the TF discussion. Attachments: Cycle 1 Silicon Wafer result.doc Document 4813: Revision to M49 to include ERO o The latest draft of the 4813 incorporates new reference wafer values for ZDD for the 45, 32 and 22 nm nodes, including 1 mm EE for only the 22 nm node. The TF recommends that this draft be balloted in Cycle 3. Motion: To ballot 4813 in Cycle By / 2 nd : Masanori Yoshise (KLA Tencor)/ Mike Goldstein (Intel) NA Silicon Wafer Committee 7 March 30, 2010

8 Attachment: 2010_0329 Poduje Minutes ADVANCED WAFER GEOMETRY TF SJC rev 1.doc 5.5 International Terminology TF Murray Bullis reported. Six documents related to GOI are included in document The GOI Task in Japan objected to the inclusion of a second line item related to the revision of SEMI M51. Specifically, the GOI TF was concerned that the Terminology Task would modify the technical content of the document. Murray explained that the Terminology TF decided to remove line item 2 from the present ballot and work with the GOI Task to revise the document along with SEMI M60 The current ballot of document 4817 will cover only the terminology issues in a single line item Attachments: Terminology Minutes.ppt Proposal_on_M51_Revision_r1.1a.ppt 5.6 Methods TF Dinesh Gupta reported. Three ballots were reviewed. Two ballots; Document 4914 Reapproval of SEMI MF and Document Withdrawal of SEMI MF399-00a passed clean. Ballot Document Reapproval of SEMI MF Ballot administratively incorrect. Document needs to re-ballot. Certain patent issues were discussed. These issues are reported later in this report. Attachments: MinTestMethodsMtg0310.doc 6 Old Business 6.1 Review of Standards due for five-year review Murray Bullis presented a file containing Standards due for five-year review. Motion: To issue revision ballots for M16, M17, M20, M21, MF 1529, MF 1618, MF 1389, MF 1725, MF 1726, MF 1727, MF 1809, MF 1810, MF By / 2 nd : Murray Bullis (Materials and Metrology)/Dinesh Gupta (STA) Action Item: Kevin Nguyen (SEMI) to issue revision ballots for M16, M17, M20, M21, MF 1529, MF 1618, MF 1389, MF 1725, MF 1726, MF 1727, MF 1809, MF 1810, MF Attachment: 5 year_review Materials Volume xls 7 New Business 7.1 SEMICON West Schedule Dinesh Gupta presented an initial draft agenda for SEMICON West, with Silicon Wafer TF meetings on Monday (July 12) and Tuesday (July 13) and the committee meeting on Tuesday (July 13). Peter Wagner requested that conflict with the PV Analytical Test Method TF and PV Materials TF be avoided. Peter Wagner commented that the following TFs would be meeting at Intersolar (Munich, Germany) in June o Methods TF and Advanced Wafer Geometry TF Attachment: SchSiWfr0710Tentative v2.xls NA Silicon Wafer Committee 8 March 30, 2010

9 7.2 Patent Review The AWG TF and Test Method TF are considering several patents and their relation to existing Standards and upcoming ballots Document 4813: Revision to M , Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130 nm to 22 nm Technology Generations Among other changes, this revision adds the ESFQR parameter to M49. The calculation of the metrics of ESFQR is the subject of U.S. Patent 7,324,917, owned by KLA-Tencor Corporation. KLA-Tencor has previously submitted a letter to SEMI stating that KLA-Tencor will negotiate licenses under reasonable and non-discriminatory conditions with any company wishing to use its patented technology in patent 7,324,917 in using, complying, or implementing document 4554 (now SEMI M67). As the content in document 4813 related to ESFQR is unlikely to change, the committee chose to make its decision on potential materiality at today s meeting. Motion: To find U.S. Patent 7,324, 917 potentially material to document By / 2 nd : Mike Goldstein (Intel)/Murray Bullis (Materials and Metrology) Motion: To find the use of the potentially material content from U.S. Patent 7,324, 917 in document 4813 technically justified. By / 2 nd : Mike Goldstein (Intel)/Murray Bullis (Materials and Metrology) In accordance with Regulations , as the technical committee determined on technical grounds that the patented technology might be material to the Document, the responsible Standards staff shall ask the holder (or holders) of the rights to the patented technology for a letter of assurance (LOA). Action Item: Kevin Nguyen (SEMI) to contact KLA-Tencor with request for letter of assurance. Murray Bullis mentioned that M1 refers to EFSQR in the order form. Action Item: Kevin Nguyen (SEMI) and Murray Bullis (Materials and Metrology) to investigate patent issues in M1 regarding ESFQR SEMI MF1708: Practice for Evaluation of Granular Polysilicon by Melter-Zoner Spectroscopies US , Analytical Method for Particulate Silicon Due to lack of clarity regarding patent issues on both MF1708 and MF1723 (below), the Test Method TF will conduct further review and report back to the committee at SEMICON West SEMI MF1723: Practice for Evaluation of Polycrystalline Silicon Rods by Float-Zone Crystal Growth and Spectroscopy US , Analytical Method for Particulate Silicon US , Method for Analyzing Irregular Shaped Chunked Silicon for Contaminants JP , Method for Analyzing Impurity of Polycrystalline Silicon Action Item: Test Method TF to further consider US , US , and JP and MF1708 and MF1723 and report their findings to the Silicon Wafer Committee at SEMICON West Document 4920: New Standard: Practice for Determining Wafer Near-Edge Geometry Using Roll-Off Amount No vote was taken at today s committee meeting regarding the potential materiality of three Shin Etsu Handotai patents to this document. NA Silicon Wafer Committee 9 March 30, 2010

10 7.3 Ballot to withdraw M47: Specification for Silicon-on-Insulator (SOI) Wafers for CMOS LSI Applications As all relevant specifications for 200 and 150 mm wafers for LSI applications are included in M , so M47 should be withdrawn. Motion: To issue a withdrawal ballot for M47 in Cycle By / 2 nd : Discussion: Mike Goldstein (Intel)/Murray Bullis (Materials and Metrology) None Action: Kevin Nguyen (SEMI) to issue a withdrawal ballot for M47 in Cycle Action Item Review 8.1 Open Action Items James Amano (SEMI) reviewed the open action items. These can be found in the Open Action Items table at the beginning of these minutes. 8.2 New Action Items James Amano (SEMI) reviewed the new action items. These can be found in the New Action Items table at the beginning of these minutes. 9 Next Meeting and Adjournment The next meeting of the NA Silicon Wafer Committee is scheduled for July 13, 2010, at SEMICON West. NA Silicon Wafer Committee 10 March 30, 2010

11 Minutes submitted by: James Amano SEMI HQ Minutes approved by: Noel Poduje (Semiconductor Metrology and Standards), Co-Chair Dinesh Gupta (Semiconductor Technology and Applications), Co-Chair Table 6 Index of Available Attachments #1 # Title # Title 1 Required Elements July 9, 2009 rev 4.ppt 10 MinEpiTF0310 v2.doc 2 MinSiWfr1109.doc 11 PW Minutes.ppt 3 EU_Silicon_Wafer_Liaison_ ppt 12 Cycle 1 Silicon Wafer result.doc 4 JP_SW_NA Spring Meetings 2010.ppt _0329 Poduje Minutes ADVANCED WAFER GEOMETRY TF SJC rev 1.doc 5 NA Staff Report (Spring 2010) Wed_Thu.ppt 14 Terminology Minutes.ppt B.doc 15 MinTestMethodsMtg0310.doc 7 Si Wafer cycle 2 ballot result.doc 16 Proposal_on_M51_Revision_r1.1a.ppt doc 17 5 year_review Materials Volume xls 9 450mm TF spring 10 report to silicon committee.ppt 18 SchSiWfr0710Tentative v2.xls #1 Due to file size and delivery issues, attachments must be downloaded separately. A.zip file containing all attachments for these minutes is available at NA Silicon Wafer Committee 11 March 30, 2010