SBB-1089 SBB-1089Z MHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier
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- Ferdinand McBride
- 5 years ago
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1 Product Description Sirenza Microdevices SBB89 is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a V supply, the SBB89 does not require a dropping resistor as compared to typical Darlington amplifiers. The SBB89 product is designed for high linearity V gain block applications that require small size and minimal external components. It is internally matched to ohms. The matte tin finish on Sirenza s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive /9. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants Gain & Return Loss vs. Frequency (w/ App. Ckt.) S11 S1 S SBB89 SBB89Z - 8 MHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier Product Features Available in Lead Free, RoHS compliant, & Green packaging IP3 = 3.1 MHz P1 = 19.6 MHz Single Fixed V Supply Robust 1V ESD, Class 1C Patented Thermal Design & Patent Pending Bias Circuit Low Thermal Resistance MSL 1 moisture rating Pb Applications Receiver IF Amplifier Cellular, PCS, GSM, UMTS Wireless Data, Satellite Terminals RoHS Compliant & Green Package Symbol Parameters Units Frequency Min. Typ. Max. 7 MHz 1. S 1 Small Signal Gain MHz MHz MHz 19 P 1 Output Power at 1 Compression m MHz 19 MHz MHz IP 3 Third Order Intercept Point m MHz 3 MHz 38.. Bandwidth S 11, S : Minimum 1 Return Loss (typ.) MHz - 8 IRL Input Return Loss 7 MHz 1 18 ORL Output Return Loss 7 MHz 1 16 S 1 Reverse Isolation 7 MHz 18 NF Noise Figure MHz 3.. V D Device Operating Voltage V.3 I D Device Operating Current ma R TH, j-l Thermal Resistance (junction - lead) C/W 8.8 Test Conditions: V D = V I D = 9mA Typ. OIP 3 Tone Spacing = 1MHz, Pout per tone = m T L = C Z S = Z L = Ohms Tested with Bias Tees The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 1 Sirenza Microdevices, Inc.. All worldwide rights reserved. Broomfield, CO 81 1 EDS3998 Rev C
2 SBB89-8 MHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies (With MHz Application Circuit) Symbol Parameter Unit S 1 Small Signal Gain OIP 3 Output Third Order Intercept Point m P 1 Output Power at 1 Compression m S 11 Input Return Loss S Output Return Loss S 1 Reverse Isolation NF Noise Figure Test Conditions: VCC = V I D = 9mA Typ. OIP 3 Tone Spacing = 1MHz, Pout per tone = m T L = C Z S = Z L = Ohms 6 Noise Figure vs. Frequency Data on Charts taken with MHz App. Ckt. 3 1 P1 vs. Frequency m 1 OIP 3 vs. Frequency 1 m 3 3 Broomfield, CO 81 EDS3998 Rev C
3 SBB89-8 MHz Cascadable MMIC Amplifier S-Parameters taken with Bias Tee over Temperature S11 vs. Frequency S1 vs. Frequency 1 1 S1 vs. Frequency S vs. Frequency -3 Device Current over Temperature (w/bias Tee) Current (ma) Current vs. Voltage Over Temp. (Bias Tee) Voltage (V) Broomfield, CO 81 3 EDS3998 Rev C
4 MHz Application Circuit S-Parameters over Temperature SBB89-8 MHz Cascadable MMIC Amplifier S11 vs. Frequency S1 vs. Frequency 1 db 1 S1 vs. Frequency S vs. Frequency -3-3 Device Current over Temperature (w/app. Ckt.) Current (ma) Current vs. Voltage Over Temp. (App. Ckt.) Voltage (V) Broomfield, CO 81 EDS3998 Rev C
5 SBB89-8 MHz Cascadable MMIC Amplifier Application Schematic Application Circuit Element Values Vs 1uF 1pF Reference Designator C B to 8 8pF L C 1nH LS Coilcraft Lc L S.7nH Toko RF in Cb Evaluation Board Layout 1 3 SBB89 Ls Cb RF out Absolute Maximum Ratings Parameter Absolute Limit + Ma. Dvice Current (I D ) Max Device Voltage (V D ) 11 ma. V Max. RF Input Power +1 m Max. Operating Dissipated Power.61 W Max. Junction Temp. (T J ) +1 C Operating Temp. Range (T L ) - C to +8 C Max. Storage Temp. +1 C Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I D V D < (T J - T L ) / R TH, j-l T L =T LEAD ESD Class 1C Appropriate precautions in handling, packaging and testing devices must be observed. Mounting Instructions 1. Solder the copper pad on the backside of the device package to the ground plane.. Use a large ground pad area with many plated through-holes as shown. 3. We recommend 1 or ounce copper. Measurement for this datasheet were made on a 31 mil thick FR- board with 1 ounce copper on both sides. MSL (Moisture Sensitivity Level) Rating: Level 1 Broomfield, CO 81 EDS3998 Rev C
6 Suggested PCB Pad Layout Dimensions in inches [millimeters] SBB89-8 MHz Cascadable MMIC Amplifier Nominal Package Dimensions Dimensions in inches (millimeters) Refer to package drawing posted at for tolerances Bottom View Side View Package Marking BB1 BB1Z Tin-Lead Lead Free Pin # Function Description Part Number Ordering Information Part Number Reel Size Devices / Reel SBB89 7" 1 SBB89Z 7" 1 1 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation., GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. 3 RF OUT/ BIAS RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper operation. Broomfield, CO 81 6 EDS3998 Rev C
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Data Sheet FEATURES Fixed gain of 20 db Operation up to 500 MHz Input/output internally matched to 50 Ω Integrated bias control circuit Output IP3 41 dbm at 70 MHz 39 dbm at 190 MHz Output 1 db compression:
More informationFeatures. = +25 C, Vcc =5V, Vpd = 5V. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max Units
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HMC37SC7E v1.1.3-3. GHz Typical Applications The HMC37SC7E is ideal for: Cellular/PCS/3G WCS, mmds & ism Fixed Wireless & WLAN Private Land Mobile Radio Functional Diagram Features Single Supply: Vdd =
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