Typical NMOS Modeling Using a Skewing Method
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1 The 4th International Conference on Integrated Circuits, Design, and Verification Mo Chi Minh City, Vietnam (Nov. 15, 2013) Typical NMOS Modeling Using a Skewing Method - An NMOS Modeling Method for RF Analog Circuit Design Centering - Hitoshi Aoki, Haruo Kobayashi Faculty of Science and Technology Gunma University, Japan Kobayashi Lab, Gunma University
2 Outline Research Background Typical Target Skewing Flow Calculations of Theoretical Target Specifications Target Device Selection and Its Modeling Model Parameter Skew to Typical E-Test Parameters Verifications of RF Circuit Simulations Conclusions 2
3 Outline Research Background Typical Target Skewing Flow Calculations of Theoretical Target Specifications Target Device Selection and Its Modeling Model Parameter Skew to Typical E-Test Parameters Verifications of RF Circuit Simulations Conclusions 3
4 Research Background For better integrated circuit design, design centering is one of the important issues! (PMOS, NMOS) 4-corner SPICE (Fast, Slow) (Typical, Typical) (Slow, Slow) (Fast, Fast) (Slow, Fast) Initial design: Typical models are used. Next design step: Worst/best models are used. 4
5 Conventional Method and Problem Most semiconductor manufacturers do NOT pay enough attention to extract Real Typical Models. Conventional methods to define typical target specification are - based only on process specifications and conditions - without using test results of fabricated devices. Not very accurate typical model 5
6 Research Objective Development of novel skewing method for typical model - based on process wafer test (E-Test) - considers analog and RF circuit design (both DC, AC characteristics) Obtain accurate typical model 6
7 Our Work DC, AC Electrical Test (E-Test) Our new algorithms Ideal typical Select typical-like device Skew Extract BSIM4 model Obtain DC, AC typical BSIM4 model 7
8 Outline Research Background Typical Target Skewing Flow Calculations of Theoretical Target Specifications Target Device Selection and Its Modeling Model Parameter Skew to Typical E-Test Parameters Verifications of RF Circuit Simulations Conclusions 8
9 Typical Target Skewing Flow 2. Development of DC/RF E-Test Algorithms 3. Perform E-Test on wafers 4. Lot/Wafer E-Test parameter database 1. Correlation Analysis between E- Test and RF characteristics Operation Flow Data Flow Data Operations 5. Typical target calculations with statistical analysis 7. Typical-like device selection 8. DC/CV/Sparameter measurements 9. RF-MOSFET model parameter extractions 6. Ideal E-Test 11. Typical skewing 10. N-MOSFET s SPICE model RF MOSFET typical model 9
10 Typical Target Skewing Flow (1) 2. Development of DC/RF E-Test Algorithms 3. Perform E-Test on wafers 4. Lot/Wafer E-Test parameter database 5. Typical target calculations with statistical analysis 1. Correlation Analysis between E- Test and RF characteristics 7. Typical-like device selection 8. DC/CV/Sparameter measurements Operation Flow Data Flow 1. Correlation Analysis Data between E-Test and RF characteristics. Operations E-Test and S-parameter measurement with network analyzer are mainly used 9. RF-MOSFET model parameter extractions 6. Ideal E-Test 11. Typical skewing 10. N-MOSFET s SPICE model RF MOSFET typical model 10
11 Typical Target Skewing Flow (2) 2. Development of DC/RF E-Test Algorithms 3. Perform E-Test on wafers 4. Lot/Wafer E-Test parameter database 5. Typical target calculations with statistical analysis 1. Correlation Analysis between E- Test and RF characteristics 2. Development of DC/RF E-Test Algorithms Data - E-Test algorithms for PCM are modified for modeling purpose. 8. DC/CV/Sparameter developed - E-Test algorithms 7. Typical-like are newly device selection measurements for RF and accurate skewing. Operation Flow Data Flow Operations 9. RF-MOSFET model parameter extractions 6. Ideal E-Test 11. Typical skewing 10. N-MOSFET s SPICE model RF MOSFET typical model 11
12 Typical Target Skewing Flow (3) 2. Development of DC/RF E-Test Algorithms 3. Perform E-Test on wafers 4. Lot/Wafer E-Test parameter database 1. Correlation Analysis between E- Test and RF characteristics 3. Perform E-Test on wafers Operation Flow Data Flow Data Operations 5. Typical target calculations with statistical analysis 7. Typical-like device selection 8. DC/CV/Sparameter measurements 9. RF-MOSFET model parameter extractions 6. Ideal E-Test 11. Typical skewing 10. N-MOSFET s SPICE model RF MOSFET typical model Wafer test 12
13 Typical Target Skewing Flow (4) 2. Development of DC/RF E-Test Algorithms 3. Perform E-Test on wafers 4. Lot/Wafer E-Test parameter database 1. Correlation Analysis between E- Test and RF characteristics Operation Flow Data Flow Data Operations 5. Typical target calculations with statistical analysis 6. Ideal E-Test 7. Typical-like device selection 8. DC/CV/Sparameter measurements 4. Lot/Wafer E-Test parameter database E-Test are stored in. 9. RF-MOSFET model parameter extractions 11. Typical skewing 10. N-MOSFET s SPICE model RF MOSFET typical model 13
14 Typical Target Skewing Flow (5) 2. Development of DC/RF E-Test Algorithms 4. Lot/Wafer E-Test parameter database 1. Correlation Analysis between E- Test and RF characteristics Operation Flow 3. Perform E-Test on 5. Typical wafers target calculations with statistical Data analysis Flow parameter correlations are maintained. Data Operations 5. Typical target calculations with statistical analysis 7. Typical-like device selection 8. DC/CV/Sparameter measurements 9. RF-MOSFET model parameter extractions 6. Ideal E-Test 11. Typical skewing 10. N-MOSFET s SPICE model RF MOSFET typical model 14
15 Typical Target Skewing Flow (6) 2. Development of DC/RF E-Test Algorithms 3. Perform E-Test on wafers 4. Lot/Wafer E-Test parameter database 1. Correlation Analysis between E- Test and RF characteristics Operation Flow Data Flow Data Operations 5. Typical target calculations with statistical analysis 7. Typical-like device selection 8. DC/CV/Sparameter measurements 6. Obtain ideal (typical) E-Test 9. RF-MOSFET model parameter extractions 6. Ideal E-Test 11. Typical skewing 10. N-MOSFET s SPICE model RF MOSFET typical model 15
16 Typical Target Skewing Flow (7) 2. Development of DC/RF E-Test Algorithms 3. Perform E-Test on wafers 4. Lot/Wafer E-Test parameter database 5. Typical target calculations with statistical analysis 1. Correlation Analysis between E- Test and RF characteristics 7. Typical-like device selection Operation Flow Data Flow Data Operations whose E-test 8. DC/CV/Sparameter 7. Typical-like parameter values are close to device selection measurements ideal (typical) E-test 9. RF-MOSFET model parameter extractions 6. Ideal E-Test 11. Typical skewing 10. N-MOSFET s SPICE model RF MOSFET typical model 16
17 Typical Target Skewing Flow (8) 2. Development of DC/RF E-Test Algorithms 3. Perform E-Test on wafers 4. Lot/Wafer E-Test parameter database 5. Typical target calculations with statistical analysis 1. Correlation Analysis between E- Test and RF characteristics 7. Typical-like device selection 8. DC/CV/Sparameter measurements Operation Flow Data Flow 8. Detailed DC/ CV/ S-parameter measurements Data of selected typical-like device. Operations 9. RF-MOSFET model parameter extractions 6. Ideal E-Test 11. Typical skewing 10. N-MOSFET s SPICE model RF MOSFET typical model 17
18 Typical Target Skewing Flow (9) 2. Development of DC/RF E-Test Algorithms 3. Perform E-Test on wafers 4. Lot/Wafer E-Test parameter database 5. Typical target calculations with statistical analysis 1. Correlation Analysis between E- Test and RF characteristics 9. RF-MOSFET model parameter extractions from selected typical-like device. 7. Typical-like device selection 8. DC/CV/Sparameter measurements Operation Flow Data Flow Data Operations 9. RF-MOSFET model parameter extractions 6. Ideal E-Test 11. Typical skewing 10. N-MOSFET s SPICE model RF MOSFET typical model 18
19 Typical Target Skewing Flow (10) 2. Development of DC/RF E-Test Algorithms 3. Perform E-Test on wafers 4. Lot/Wafer E-Test parameter database 5. Typical target calculations with statistical analysis 1. Correlation Analysis between E- Test and RF characteristics 7. Typical-like device selection 8. DC/CV/Sparameter measurements Operation Flow Data Flow Data Operations 10. Obtain N-MOSFET SPICE model from selected typical-like device. 9. RF-MOSFET model parameter extractions 6. Ideal E-Test 11. Typical skewing 10. N-MOSFET s SPICE model RF MOSFET typical model 19
20 Typical Target Skewing Flow (11) 2. Development of DC/RF E-Test Algorithms 3. Perform E-Test on wafers 4. Lot/Wafer E-Test parameter database 11. Typical skewing 1. Correlation Analysis between E- Test and RF characteristics 5. Typical target 8. DC/CV/S- calculations 7. Typical-like 9. RF-MOSFET model with statistical device selection N-MOSFET SPICE model parameter extractions measurements analysis 11. Typical skewing 10. N-MOSFET s SPICE model RF MOSFET typical model Operation Flow Data Flow Data Operations of typical-like device are skewed 6. Ideal to E-Test match ideal (typical) E-. Correlation among is maintained. 20
21 Typical Target Skewing Flow (Final) 2. Development of DC/RF E-Test Algorithms 3. Perform E-Test on wafers 4. Lot/Wafer E-Test parameter database 1. Correlation Analysis between E- Test and RF characteristics Operation Flow Data Flow Data Operations 5. Typical target calculations with statistical analysis 6. Ideal E-Test 7. Typical-like device selection 8. DC/CV/Sparameter measurements 9. RF-MOSFET model parameter extractions RF MOSFET BSIM4 typical model are obtained Any submicron SPICE model as well as BSIM4 can be used for our skewing method. 11. Typical skewing 10. N-MOSFET s SPICE model RF MOSFET typical model 21
22 Outline Research Background Typical Target Skewing Flow Calculations of Theoretical Target Specifications Target Device Selection and Its Modeling Model Parameter Skew to Typical E-Test Parameters Verifications of RF Circuit Simulations Conclusions 22
23 Calculations of Theoretical Target Specifications Development of E-Test Modifications, additions of test specifications, algorithms from PCM (Process Control Monitor) RF model definitions RF E-Test parameter inclusions Statistical analysis for typical parameter calculations E-Test executions, E-Test parameter screening with statistical functions Correlation analysis to maintain the relationships between E-Test 23
![RF NMOS Model Definition and Parameters KAIST small signal equivalent circuit [1] S- Y- easy to convert trans](/docs-images/87/95078928/images/24-0.jpg "capacitance Y 11 1 j C C j C gs gd gd Y12 j Cgs Cgd R 1 j C g gs Cgd Rg Y g j C j C m m gd 21 1 j C C R gs gd g")
![j Cjd Y22 g j C j C 1 j C R ds sd gd jd subd 2 C R C C j g C R 1 j C C R gd g gd m m gd g gs gd g [1] I.](/docs-images/87/95078928/images/24-1.jpg "Kwon, et.al., A New Small Signal Modeling of RF MOSFETs including Charge Conservation Capacitances, ESSCIRC (Jul.")
24 RF NMOS Model Definition and Parameters KAIST small signal equivalent circuit [1] S- Y- easy to convert trans capacitance Y 11 1 j C C j C gs gd gd Y12 j Cgs Cgd R 1 j C g gs Cgd Rg Y g j C j C m m gd 21 1 j C C R gs gd g j Cjd Y22 g j C j C 1 j C R ds sd gd jd subd 2 C R C C j g C R 1 j C C R gd g gd m m gd g gs gd g [1] I. Kwon, et.al., A New Small Signal Modeling of RF MOSFETs including Charge Conservation Capacitances, ESSCIRC (Jul. 2000). 24
25 New algorithm for calculation New as E-Test E-Test Parameters Used for Typical Device Targeting E-Test Parameter TOX LD WD Idsat Gmmax Beta Rcon Rdiff VTO COV CJ CJW Meanings Oxide thickness Diffusion length Diffusion width Saturation current Maximum conductance Slope of Ids-Vgs Plot Contact resistance Diffusion resistance Threshold voltage Overlap capacitance Area Junction capacitance Conventional E-test were only for DC. Perimeter Junction capacitance 25
26 Correlation Analysis of E-Test Parameters Correlation Matrix Correlation Between VT0 and Thin Gate Oxide VT0 Thin Gate Oxide Their correlation represents device process. Correlation > 0.6 should be maintained for statistical modeling. 26
27 Outline Research Background Typical Target Skewing Flow Calculations of Theoretical Target Specifications Target Device Selection and Its Modeling Model Parameter Skew to Typical E-Test Parameters Verifications of RF Circuit Simulations Conclusions 27
28 Target Device Selection and Its Modeling Calculated ideal (typical) E-Test Typical Target Parameters. VT0.Short = 4.545e-001 BETA.Short = 1.369e+004 Idsat.Short = 6.109e-003 VT0.Large = 2.423e-001 BETA.Large = 2.833e+002 GMMAX.Large = Idsat.Large = 2.612e-004 VT0.Narrow = 1.484e-001 BETA.Narrow = 5.766e+000 Idsat.Narrow = 6.127e-006 TOX = 2.751e-009 Rcon = 6.211e+000 Rdiff = 2.122e+000 DL = e-008 DW = e-008 COV = 2.453e-012 CJ = 3.812e-012 CJW = 5.146e-012 Extracted BSIM4 of selected typical-like device Typical-like Device Device (No:12) --- wafer_no.: 5 shot_no.: 1 x: 7 y: 4 VT0.Short: VT0.Short Error: % BETA.Short: BETA.Short Error: % Idsat.Short: Idsat.Short Error: % VT0.Large: VT0.Large Error: % BETA.Large: 283 BETA.Large Error: % GMMAX.Large: GMMAX.Large Error: % Idsat.Large: Idsat.Large Error: % VT0.Narrow: VT0.Narrow Error: % BETA.Narrow: 5.79 BETA.Narrow Error: % Idsat.Narrow: 6.2e-006 Idsat.Narrow Error: % There are discrepancies and skewing is needed. TOX: 2.711e-009 TOX Error: % Rcon: 6.2e-006 Rcon Error: % Rdiff: 6.2e-006 Rdiff Error: % DL: e-008 DL Error: % DW: e-008 DW Error: % COV: 2.491e-012 COV Error: % CJ: 3.805e-012 CJ Error: % CJW: 5.124e-012 CJW Error: % ********************** Average Error: % 28
29 Outline Research Background Typical Target Skewing Flow Calculations of Theoretical Target Specifications Target Device Selection and Its Modeling Model Parameter Skew to Typical E-Test Parameters Verifications of RF Circuit Simulations Conclusions 29
30 BSIM4 Model Parameter Skew to Typical E-Test Parameters Skewing Conditions Model should be - physical - process oriented. Slope of IV or CV should NOT be - changed drastically by skewing model 30
31 Skewing Concept with VSAT I sat _Typical I D Isat Target measured at E-Test Calculated ideal typical I sat _Typical-like Simulation with typical-like device BSIM4 model Skewing by changing BSIM4 model parameter, VSAT Isat : E-Test parameter VSAT: BSIM4 parameter V DS 31
32 E-Test Parameters for Target and BSIM4 Model Parameters for Skew Type of the simulation E-Test parameter as targets I DS vs. V GS VT0.Large VTH0 g m vs. V GS GMMAX.Large, BETA.Large UA BSIM4 Model for skewing I DS vs. V GS VT0.Narrow K3, WINT, DVT0W I DS vs. V GS VT0.Short DVT0 I DS vs. V DS Idsat.Large U0 I DS vs. V DS Idsat.Narrow WINT I DS vs. V DS Idsat.Short VSAT, LVSAT C GC vs. V GC COV CGS0 (=CGD0), CGSL (=CGDL) C J vs. V J CJ.area CJ0 C J vs. V J CJ.perim CJSW 32
33 Examples of DC Parameters Skew measured measured skewed skewed Typical-like model from selected device Skewed typical model measured at E-test 33
34 Examples of CV Parameters Skew measured Gate cap. Area junction cap. skewed Measured at E-test Typical-like model from selected device Skewed typical model Useful for RF design 34
35 Outline Research Background Typical Target Skewing Flow Calculations of Theoretical Target Specifications Target Device Selection and Its Modeling Model Parameter Skew to Typical E-Test Parameters Verifications of RF Circuit Simulations Conclusions 35
36 Verifications of RF Circuit Simulations A cascode amplifier for verification MOS1 Vbias MOS1 OUT MOS2 Vin MOS2 Reference plane of Port1 Reference plane of Port2 36
37 S 21 [db] Measurement and Simulation Results of S 21 Dependencies on Frequency of Cascode Amplifier Measured Samples (100 chips were randomly selected from 3 lots of wafers) Proposed RF Typical model (Successfully located in the middle of 100 measured data!) Typical model supplied by a foundry Measured Typical-like Device Frequency [GHz] 37
38 Outline Research Background Typical Target Skewing Flow Calculations of Theoretical Target Specifications Target Device Selection and Its Modeling Model Parameter Skew to Typical E-Test Parameters Verifications of RF Circuit Simulations Conclusions 38
39 Conclusions A new procedure of NMOS typical target and a skewing method for RF analog applications were demonstrated. RF NMOS typical targeting results were examined with a simple cascode amplifier designed and fabricated in our TEG. Skewed results were located in the middle of randomly measured 100 S 21 data. This typical model generation method practical, useful for CMOS circuit designer. 39
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