FAIRCHILD TVS Is Now Part of
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- Tyler McBride
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1 FARCHLD TVS s Now Part of To learn more about Taiwan Semiconductor, please visit our website at Please note: The acquisition of this portfolio aligns with our strategy to expand in power semiconductor applications while strengthening our core circuit protection business. All of the Fairchild orderable part numbers will remain unchanged in order to maintain consistency with our customers. For more information regarding this acquisition please refer to ON Semi / Fairchild TVS Acquisition Q&A
2 SMBJ5V0(C)A - SMBJ170(C)A 600 Watt Transient Voltage Suppressors Features Glass-Passivated Junction 600 W Peak Pulse Power Capability on 10/0 μs Waveform. Excellent Clamping Capability Low-ncremental Surge Resistance Fast Response Time: Typically Less than 1.0 ps from 0 V to BV minimum for Unidirectional and 5.0 ns for Bidirectional Typical R Less than 1.0 μa Above 10 V UL Certificate #E Absolute Maximum Ratings SMB/DO-214AA Band denotes cathode on unidirectional devices only. No band on bi-directional devices. Bi-directional types have CA suffix where electrical characteristics apply in both directions suitable for bi-directional applications. Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. n addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 25 C unless otherwise noted. Symbol Parameter Value Unit P PPM Peak Pulse Power Dissipation on 10/0 μs Waveform 600 W PPM Peak Pulse on 10/0 μs Waveform See Table A FSM Non-Repetitive Peak Forward Surge Superimposed on Rated Load (JEDEC Method) (1) A T STG Storage Temperature Range -55 to 1 C T J Operating Junction Temperature Range -55 to 1 C Note: 1. Measured on 8.3 ms single half-sine wave or equivalent square wave: duty cycle = 4 pulses per minute maximum. SMBJ5V0(C)A - SMBJ170(C)A
3 Electrical Characteristics Values are at T A = 25 C unless otherwise noted. Reverse Breakdown Clamping Reverse Uni-Directional Part Stand-Off Voltage Test Peak Pulse Voltage Leakage Bi-Directional (C) Marking (2) Voltage V BR (V) at Device V RWM (V) T (ma) PPM at V V C (V) PPM (A) RWM Min. Max. R (μa) (3) SMBJ5V0(C)A KE SMBJ6V0(C)A KG SMBJ6V5(C)A KK SMBJ7V0(C)A KM SMBJ7V5(C)A KP SMBJ8V0(C)A KR SMBJ8V5(C)A KT SMBJ9V0(C)A KV SMBJ10(C)A KX SMBJ11(C)A KZ SMBJ12(C)A LE SMBJ13(C)A LG SMBJ14(C)A LK SMBJ15(C)A LM SMBJ16(C)A LP SMBJ17(C)A LR SMBJ18(C)A LT SMBJ20(C)A LV SMBJ22(C)A LX SMBJ24(C)A LZ SMBJ26(C)A ME SMBJ28(C)A MG SMBJ30(C)A MK SMBJ33(C)A MM SMBJ36(C)A MP SMBJ40(C)A MR SMBJ43(C)A MT SMBJ45(C)A MV SMBJ48(C)A MX SMBJ51(C)A MZ SMBJ54(C)A NE SMBJ58(C)A NG SMBJ60(C)A NK SMBJ64(C)A NM SMBJ70(C)A NP SMBJ75(C)A NR SMBJ78(C)A NT Notes: 2. Color band denotes cathode on unidirectional devices only. No color band on bidirectional devices. 3. For bidirectional parts with V RWM < 10 V, the R max limit is doubled. SMBJ5V0(C)A - SMBJ170(C)A 2
4 Electrical Characteristics (Continued) Values are at T A = 25 C unless otherwise noted. Reverse Breakdown Clamping Reverse Uni-Directional Part Stand-Off Voltage Test Peak Pulse Voltage Leakage Bi-Directional (C) Marking (2) Voltage V BR (V) at Device V RWM (V) T (ma) PPM at V V C (V) PPM (A) RWM Min. Max. R (μa) (3) SMBJ85(C)A NV SMBJ90(C)A NX SMBJ(C)A NZ SMBJ110(C)A PE SMBJ120(C)A PG SMBJ130(C)A PK SMBJ1(C)A PM SMBJ160(C)A PP SMBJ170(C)A PR Notes: 2. Color band denotes cathode on unidirectional devices only. No color band on bidirectional devices. 3. For bidirectional parts with V RWM < 10 V, the R max limit is doubled. SMBJ5V0(C)A - SMBJ170(C)A 3
5 Typical Performance Characteristics PULSE POWER (kw) PEAK PULSE CURRENT (%) 10 1 T A = 25 º C PULSE WDTH (ms) Figure 1. Peak Pulse Power Rating Curve 1 tf = 10μsec Peak Value ppm td T A = 25 º C Pulse Width (td) is Defined as the Point Where the Peak Decays to % of pp Half Value-pp 2 10/0μsec Waveform as Defined by R.E.A. e-kt TME (ms) Figure 3. Pulse Waveform PULSE POWER (%) CAPACTANCE (pf) AMBENT TEMPERATURE ( º C) Figure 2. Pulse Derating Curve Measured at Stand-Off Voltage (V RWM) T A = 25 º C f = 1.0 MHz Visg = m Vp-p REVERSE VOLTAGE (V) Figure 4. Junction Capacitance Measured at Zero Bias FORWARD SURGE CURRENT (A) T A = T A max 8.3ms Single Half Sine-Wave JEDEC Method NUMBER OF CYCLES AT 60Hz Figure 5. Non-Repetitive Surge SMBJ5V0(C)A - SMBJ170(C)A 4
6
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Transient Suppressors Features Glass passivated junction. 600W Peak Pulse
More informationFAIRCHILD TVS Is Now Part of
FAIRCHILD TVS Is Now Part of To learn more about Taiwan Semiconductor, please visit our website at www.taiwansemi.com Please note: The acquisition of this portfolio aligns with our strategy to expand in
More informationFAIRCHILD TVS Is Now Part of
FAIRCHILD TVS Is Now Part of To learn more about Taiwan Semiconductor, please visit our website at www.taiwansemi.com Please note: The acquisition of this portfolio aligns with our strategy to expand in
More informationFAIRCHILD TVS Is Now Part of
FARCHLD TVS s Now Part of To learn more about Taiwan Semiconductor, please visit our website at www.taiwansemi.com Please note: The acquisition of this portfolio aligns with our strategy to expand in power
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P4SMA-E Series RoHS Pb e3 Description The P4SMA-E series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.
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omponents 20736 Marilla Street Chatsworth!"# $%!"# SMCJ1.5KE6.8(C)A THRU SMCJ1.5KE550(C)A Features For surface mount applicationsin in order tooptimize board space Lead Free Finish/Rohs Compliant (Note1)
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