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1 Distributed by: The content and copyrights of the attached material are the property of its owner.
2 Transient Suppressors Features Glass passivated junction. 600W Peak Pulse Power capability on /0 µs waveform. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less than 1.0 ps from 0 volts to BV for unidirectional and 5.0 ns for bidirectional. Typical I R less than 1.0 µa above V. SMB/DO-214AA COLOR BAND DENOTES CATHODE ON UNIDIRECTIONAL DEVICES ONLY. NO COLOR BAND ON BIDIRECTIONAL DEVICES. DEVICES FOR BIPOLAR APPLICATIONS - Bidirectional types use CA suffix. - Electrical Characteristics apply in both directions. 600 Watt Transient Suppressors Absolute Maximum Ratings* T A = 25 C unless otherwise noted Symbol Parameter Value Units P PPM Peak Pulse Power Dissipation on /0 µs waveform 600 W I PPM Peak Pulse Current on /0 µs waveform see table A I FSM Non-repetitive Peak Forward Surge Current superimposed on rated load (JEDEC method) (Note 1) A T stg Storage Temperature Range -55 to +1 C T J Operating Junction Temperature + 1 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Note 1: Measured on 8.3 ms single half-sine wave or equivalent square wave; Duty cycle = 4 pulses per minute maximum Fairchild Semiconductor Corporation
3 Electrical Characteristics Uni-directional Bi-directional (C) Device Part Marking* Reverse Stand-off V RWM (V) T A = 25 C unless otherwise noted Breakdown V BR (V) Test Current I T (ma) Transient Suppressors (continued) PPM V C (V) Peak Pulse Current I PPM (A) * Color band denotes cathode on unidirectional devices only. No color band on bidirectional devices. ** For bidirectional parts with V RWM <V, the I R max limit is doubled. Reverse V RWM I R (ua)** min max SMBJ5V0(C)A KE SMBJ6V0(C)A KG SMBJ6V5(C)A KK SMBJ7V0(C)A KM SMBJ7V5(C)A KP SMBJ8V0(C)A KR SMBJ8V5(C)A KT SMBJ9V0(C)A KV SMBJ(C)A KX SMBJ11(C)A KZ SMBJ12(C)A LE SMBJ13(C)A LG SMBJ14(C)A LK SMBJ15(C)A LM SMBJ16(C)A LP SMBJ17(C)A LR SMBJ18(C)A LT SMBJ20(C)A LV SMBJ22(C)A LX SMBJ24(C)A LZ SMBJ26(C)A ME SMBJ28(C)A MG SMBJ30(C)A MK SMBJ33(C)A MM SMBJ36(C)A MP SMBJ40(C)A MR SMBJ43(C)A MT SMBJ45(C)A MV SMBJ48(C)A MX SMBJ51(C)A MZ SMBJ54(C)A NE SMBJ58(C)A NG SMBJ60(C)A NK SMBJ64(C)A NM SMBJ70(C)A NP SMBJ75(C)A NR SMBJ78(C)A NT SMBJ85(C)A NV SMBJ90(C)A NX SMBJ(C)A NZ SMBJ1(C)A PE SMBJ120(C)A PG SMBJ130(C)A PK SMBJ1(C)A PM SMBJ160(C)A PP SMBJ170(C)A PR
4 Typical Characteristics PULSE POWER (kw) 1 Peak Pulse Power Rating Curve PULSE POWER (%) Transient Suppressors (continued) Pulse Derating Curve PULSE WIDTH (ms) AMBIENT TEMPERATURE ( º C) PEAK PULSE CURRENT (%) 1 tf = µsec Peak Value Ippm td Pulse Waveform Pulse Width (td) is Defined as the Point Where the Peak Current Decays to % of Ipp Half Value-Ipp 2 /0µsec Waveform as Defined by R.E.A. e-kt TIME (ms) CAPACITANCE (pf) Junction Capacitance Measured at Stand-Off (V mw) f = 1.0 MHz Visg = m Vp-p Measured at Zero Bias REVERSE VOLTAGE (V) FORWARD SURGE CURRENT (A) Non-Repetitive Surge Current T A = T A max 8.3ms Single Half Sine-Wave JEDEC Method NUMBER OF CYCLES AT 60Hz
5 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks ACEx ActiveArray Bottomless CoolFET CROSSVOLT DOME EcoSPARK E 2 CMOS TM EnSigna TM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used herein: 1 Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user PRODUCT STATUS DEFINITIONS Definition of Terms FACT FACT Quiet Series FAST â FASTr FRFET GlobalOptoisolator GTO HiSeC I 2 C Across the board Around the world The Power Franchise Programmable Active Droop ImpliedDisconnect ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC â OPTOPLANAR PACMAN POP Power247 PowerTrench â QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect SILENT SWITCHER â SMART START 2 A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Datasheet Identification Product Status Definition SPM Stealth SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic â TruTranslation UHC UltraFET â VCX Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development Specifications may change in any manner without notice This datasheet contains preliminary data, and supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design This datasheet contains final specifications Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor The datasheet is printed for reference information only Rev I2
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Features Glass passivated junction. 10 W Peak Pulse Power capability on
Distributed by: www.jameco.com -8-8-4242 The content and copyrights of the attached material are the property of its owner. Connection Diagram 448 448SE SOT-2 2 5H MARKING MMBD448 5H MMBD448CA MMBD448CC
FAIRCHILD TVS Is Now Part of
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1.5KE6.8(C)A - 1.5KE440(C)A
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J108/J109/J110/MMBFJ108
N-Channel Switch This device is designed for digital switching applications where very low on resistance is mandatory. Sourced from Process 8. J8/J9/J/MMBFJ8 TO-92. Drain 2. Source 3. Gate 3 2 SuperSOT-3
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KSP42/43. Symbol Parameter Value Units V CBO V V V CEO
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ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)
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FFA30UP20DN Ultrafast Recovery Power Rectifier
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SMBJ5V0(C)A - SMBJ170(C)A 600 Watt Transient Voltage Suppressors
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FQA11N90C FQA11N90C. 900V N-Channel MOSFET. Absolute Maximum Ratings T C = 25 C unless otherwise noted. Thermal Characteristics.
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FJA4310. Symbol Parameter Value Units
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ISL9R860P2, ISL9R860S2, ISL9R860S3ST
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Features GATE SOURCE. Symbol Parameter Ratings Units V DSS Drain to Source Voltage 400 V V GS Gate to Source Voltage ±30 V Drain Current
A, 4V,.55 Ohm, N-Channel SMPS Power MOSFET Applications Switch Mode Power Supplies (SMPS) Uninterruptable Power Supply High Speed Power Switching Features Low Gate Charge Q g results in Simple Drive Requirement
Features. Symbol Description FGA25N120AND Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ± 20 V Collector T
FGA25N2AND General Description Employing NPT technology, Fairchild s AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction
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600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has
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MUR840, MUR860, RURP840, RURP860
MUR4, MUR6, RURP4, RURP6 Data Sheet January 22 A, 4V - 6V Ultrafast Diodes The MUR4, MUR6, RURP4 and RURP6 are low forward voltage drop ultrafast recovery rectifiers ( < 6ns). They use a glass-passivated
Description. TO-220 FCP Series. Symbol Parameter FDP61N20 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDP61N20 200V N-Channel MOSFET Features 61A, 200V, R DS(on) = 0.041Ω @ = 10 V Low gate charge ( typical 58 nc) Low C rss ( typical 80 pf) Fast switching 100% avalanche tested Improved dv/dt capability
RURD4120, RURD4120S. Features. 4A, 1200V Ultrafast Diodes. Applications. Ordering Information. Packaging. Symbol. Data Sheet January 2002
RURD2, RURD2S Data Sheet January 22 A, 2V Ultrafast Diodes The RURD2 and RURD2S are ultrafast diodes with soft recovery characteristics ( < 7ns). They have low forward voltage drop and are silicon nitride
QFET TM FQP13N50C/FQPF13N50C
500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
ISL9R3060G2, ISL9R3060P2
ISL9R36G2, ISL9R36P2 3A, 6V Stealth Diode General Description The ISL9R36G2 and ISL9R36P2 are Stealth diodes optimized for low loss performance in high frequency hard switched applications. The Stealth
Data Sheet January Features. Packaging. 30 A (T C = 145 o C) Repetitive Peak Surge Current... I FRM
RURP32 Data Sheet January 22 3A, 2V Ultrafast Diode The RURP32 is an ultrafast diode (t rr < 45ns) with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride
Data Sheet January Features. Packaging
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QFET TM FQP4N90C/FQPF4N90C
900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
QFET TM FQD18N20V2 / FQU18N20V2
200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
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NChannel Small Signal MOSFET 2N7002MTF FEATURES B DSS = 60! Lower R DS(on)! Improved Inductive Ruggedness! Fast Switching Times! Lower Input Capacitance! Extended Safe Operating Area! Improved High Temperature
Features. = 25 C unless otherwise noted
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MOCD223-M Dual Channel Phototransistor Small Outline Surface Mount Optocouplers
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SOT-23 Mark: 62V / 62W / 62X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
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FFPF6B5DS FFPF6B5DS Features High voltage and high reliability High speed switching Modulation diode / Damper diode Low conduction loss Modulation diode / Damper diode TO-22F Applications (Modulation +
Description. TO-3P FDA Series. Symbol Parameter FDA70N20 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDA70N20 200V N-Channel MOSFET Features 70A, 200V, R DS(on) = 0.035Ω @ = 10 V Low gate charge ( typical 66 nc) Low C rss ( typical 89 pf) Fast switching 100% avalanche tested Improved dv/dt capability
FQA8N100C 1000V N-Channel MOSFET
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RURG Features. 80A, 1000V Ultrafast Diode. Applications. Ordering Information. Packaging. Symbol. Data Sheet January 2002
RURG81 Data Sheet January 22 8A, 1V Ultrafast Diode The RURG81 is an ultrafast diode with soft recovery characteristics (t rr < 125ns). It has low forward voltage drop and is of silicon nitride passivated
Description. Symbol Parameter FDAF69N25 Unit. (Note 2) Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDAF69N25 250V N-Channel MOSFET Features 34A, 250V, R DS(on) = 0.041Ω @ = 10 V Low gate charge ( typical 77 nc) Low Crss ( typical 84 pf) Fast switching Improved dv/dt capability Description September
FJL6820. Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction to Case C/W
High Voltage Color Display Horizontal Deflection Output High Collector-Base Breakdown Voltage : BV CBO = 5V Low Saturation Voltage : (sat) = 3V (Max.) For Color Monitor NPN Triple Diffused Planar Silicon
Features. TO-220F IRFS Series
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QFET FQP9N25C/FQPF9N25C
250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
DESCRIPTION The device consists of a gallium arsenide infrared emitting diode optically coupled to a high voltage, silicon, phototransistor detector in a standard 6-pin DIP package. It is designed for
BAS16HT1G. Symbol Parameter Value Units V RRM Maximum Repetitive Reverse Voltage 85 V I F(AV) Average Rectified Forward Current 200 ma I FSM
BAS6HTG BAS6HTG Connection Diagram A SOD-33 Small Signal Diode Absolute Maximum Ratings * T A = 5 C unless otherwise noted Symbol Parameter Value Units V RRM Maximum Repetitive Reverse Voltage 85 V I (AV)
FDD8780/FDU8780 N-Channel PowerTrench MOSFET 25V, 35A, 8.5mΩ General Description
E N FDD878/FDU878 N-Channel PowerTrench MOSFET 5V, 35A, 8.5mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either
GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS
DESCRIPTION The 4N29, 4N30, 4N3, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. 4N29 4N30 4N3 4N32 4N33 FEATURES High sensitivity to low input
RFP12N10L. Features. 12A, 100V, Ohm, Logic Level, N-Channel Power MOSFET. Ordering Information. Symbol. Packaging. Data Sheet April 2005
RFP12N1L Data Sheet April 25 12A, 1V,.2 Ohm, Logic Level, N-Channel Power MOSFET These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic
FDH15N50 / FDP15N50 / FDB15N50
15A, V,.38 Ohm, N-Channel SMPS Power MOSFET Applications Switch Mode Power Supplies(SMPS), such as PFC Boost Two-Switch Forward Converter Single Switch Forward Converter Flyback Converter Buck Converter
FDD8778/FDU8778 N-Channel PowerTrench MOSFET 25V, 35A, 14mΩ Features
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FDB5800 N-Channel Logic Level PowerTrench MOSFET
FDB58 N-Channel Logic Level PowerTrench MOSFET 6V, 8A, 7mΩ Features r DS(ON) = 5.5mΩ (Typ.), V GS = 5V, I D = 8A High performance trench technology for extermely low Rdson Low Gate Charge High power and
Features. (Note 1b) 1.2. (Note 1c) 1.0. (Note 1c) 125
NDS97 V P-Channel PowerTrench MOSFET May NDS97 General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced PowerTrench process. It has been optimized for power
FJAF6810. h FE2 V CE =5V, I C =6A. Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction to Case 2.08 C/W
FJAF68 FJAF68 High Voltage Color Display Horizontal Deflection Output High Collector-Base Breakdown Voltage : BV CBO = 5V High Switching Speed : (typ.) =.µs For Color Monitor TO-3PF.Base 2.Collector 3.Emitter
ANODE 2 CATHODE ANODE 1
ISL9KP3 A, V Stealth Dual Diode General Description The ISL9KP3 is a Stealth dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth family exhibits low
FDP75N08A 75V N-Channel MOSFET
FDP75N08A 75V N-Channel MOSFET Features 75A, 75V, R DS(on) = 0.011Ω @ = 10 V Low gate charge ( typical 145nC) Low Crss ( typical 86pF) Fast switching Improved dv/dt capability Description July 2006 UniFET
FDD8782/FDU8782 N-Channel PowerTrench MOSFET 25V, 35A, 11mΩ General Description
E N FDD878/FDU878 N-Channel PowerTrench MOSFET 5V, 35A, mω General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous
Features. TA=25 o C unless otherwise noted
3V P-Channel PowerTrench MOSFET October 2 General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced PowerTrench process. It has been optimized for power management
Features. 13 A, 30 V. R DS(ON) = 11.3 V GS = 10 V R DS(ON) = 14.4 V GS = 4.5 V. RoHS Compliant. Symbol Parameter Ratings Units
3V N-Channel Fast Switching PowerTrench MOSFET February 27 tm General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either
FDD V P-Channel PowerTrench MOSFET 40V, 32A, 27mΩ Features
FDD4685 V P-Channel PowerTrench MOSFET V, 3A, 7mΩ Features Max r DS(on) = 7mΩ at V GS = V, I D = 8.4A Max r DS(on) = 35mΩ at V GS = 4.5V, I D = 7A High performance trench technology for extremely low r
ISL9V2540S3S EcoSPARK TM N-Channel Ignition IGBT 250mJ, 400V Features
ISL9V24S3S EcoSPARK TM N-Channel Ignition IGBT 2mJ, 4V Features! SCIS Energy = 2mJ at T J = 2 o C! Logic Level Gate Drive Applications! Automotive Ignition Coil Driver Circuits! Coil - On Plug Applications
SOT-23 Mark: 6U / 6T. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
G S D J J TO-92 MMBFJ MMBFJ G SOT-23 Mark: 6U / 6T D S NOTE: Source & Drain are interchangeable This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier,
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. LM741 Single Operational Amplifier Features Short Circuit Protection Excellent
Features. TA=25 o C unless otherwise noted. (Note 1b) 0.9. (Note 1c) 0.7
April V Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description The combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage
FJE3303 High Voltage Fast-Switching NPN Power Transistor
FJE3303 High oltage Fast-Switching NPN Power Transistor High oltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Regulator TO-26. Emitter 2.Collector 3.Base Absolute Maximum
NC7WZ17 TinyLogic UHS Dual Buffer with Schmitt Trigger Inputs
April 2006 NC7WZ17 TinyLogic UHS Dual Buffer with Schmitt Trigger Inputs General Description The NC7WZ17 is a dual buffer with Schmitt trigger inputs from Fairchild s Ultra High Speed Series of TinyLogic
FDP3651U N-Channel PowerTrench MOSFET 100V, 80A, 15mΩ Features
FDP365U N-Channel PowerTrench MOSFET V, 8A, 5mΩ Features r DS(on) =3 mω(typ.), V GS = V, I D = 4A Q g(tot) =49 nc(typ.), V GS = V Low Miller Charge Low Q rr Body Diode UIS Capability (Single Pulse/Repetitive
2N5551- MMBT5551 NPN General Purpose Amplifier
2N5551- MMBT5551 NPN General Purpose Amplifier Features This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551
Features S 1. T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units. Pulsed 6 Power Dissipation for Single Operation (Note 1a) 0.
V N-Channel PowerTrench MOSFET October General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
SMBJ5V0(C)A - SMBJ170(C)A 600 Watt Transient Voltage Suppressors
SMJ5V0(C)A - SMJ170(C)A 600 Watt Transient Suppressors Features Glass-Passivated Junction 600 W Peak Pulse Power Capability on 10/0 μs Waveform. Excellent Clamping Capability Low-Incremental Surge Resistance
FDP V, 80A, 2.7mΩ. N-Channel PowerTrench MOSFET. FDP8441 N-Channel PowerTrench MOSFET. Applications. Features.
M E N FDP844 N-Channel PowerTrench MOSFET 4V, 8A, 2.7mΩ Features Typ r DS(on) = 2.mΩ at V GS = V, I D = 8A Typ Q g() = 25nC at V GS = V Low Miller Charge Low Q rr Body Diode UIS Capability (Single Pulse
FDB V N-Channel PowerTrench MOSFET
FDB264 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize
FQPF12N60CT 600V N-Channel MOSFET
FQPF12N60CT 600V N-Channel MOSFET Features 12A, 600V, R DS(on) = 0.65Ω @ = 10 V Low gate charge ( typical 48 nc) Low Crss ( typical 21 pf) Fast switching 100% avalanche tested Improved dv/dt capability
Features. Max r DS(on) = 50 V GS = -10 V, I D = -4A. Max r DS(on) = 75 V GS = -4.5 V, I D = -3.4A. RoHS Compliant
FC58AP Single P-Channel Logic Level PowerTrench MOSFET -3V, -A, 5mΩ General escription This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process. It has been optimized
FOD816 Series 4-Pin Phototransistor Optocouplers
FOD86 Series 4-Pin Phototransistor Optocouplers Features AC input response Applicable to Pb-free IR reflow soldering Compact 4-pin package High current transfer ratio: 6% minimum Safety agency approvals