NLAS323. Dual SPST Analog Switch, Low Voltage, Single Supply A4 D
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1 Dual SPST Analog Switch, Low Voltage, Single Supply The NLAS323 is a dual SPST (Single Pole, Single Throw) switch, similar to /2 a standard 466. The device permits the independent selection of 2 analog/digital signals. Available in the US package. The use of advanced.6 micron CMOS process, improves the R ON resistance considerably compared to older higher voltage technologies. On Resistance is 2 Typical at 5. V Matching is <. Between Sections 2. to 6. V Operating Range Ultra Low < 5. pc Charge Injection Ultra Low Leakage <. na at 5. V, 25 C Wide Bandwidth > 2 MHz, 3. db 2 V ESD (Human Body Model) Ron Flatness 6. at 5. V US Package Independent, Positive Enable Pb Free Package is Available* US US SUFFIX CASE 493 A4 = Device Code D = Date Code MARKING DIAGRAM A4 D PIN ASSIGNMENT NO 2 COM 3 IN2 NO 4 GND 5 NO2 COM 2 7 IN 6 7 COM2 IN IN2 3 6 COM2 GND 4 5 NO2 FUNCTION TABLE On/Off Enable Input State of Analog Switch Figure. Pinout L H Off On ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 24 February, 24 Rev. 6 Publication Order Number: NLAS323/D
2 MAXIMUM RATINGS Symbol Parameter Value Unit DC Supply Voltage.5 to 7. V V I DC Input Voltage.5 to 7. V V O DC Output Voltage.5 to 7. V I IK DC Input Diode Current V I < GND 5 ma I OK DC Output Diode Current V O < GND 5 ma I O DC Output Sink Current 5 ma I CC DC Supply Current per Supply Pin ma I GND DC Ground Current per Ground Pin ma T STG Storage Temperature Range 65 to 5 C T L Lead Temperature, mm from Case for Seconds 26 C T J Junction Temperature under Bias 5 C JA Thermal Resistance (Note ) 25 C/W P D Power Dissipation in Still Air at 5 C 25 mw MSL Moisture Sensitivity Level F R Flammability Rating Oxygen Index: 2 to 34 UL 94 in V ESD ESD Withstand Voltage Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) > 2 > 5 N/A V Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute maximum rated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions.. Measured with minimum pad spacing on an FR4 board, using mm by inch, 2 ounce copper trace with no air flow. 2. Tested to EIA/JESD22 A4 A. 3. Tested to EIA/JESD22 A5 A. 4. Tested to JESD22 C A. RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit Positive DC Supply Voltage 2. V V IN Digital Input Voltage (Enable) GND V V IO Static or Dynamic Voltage Across an Off Switch GND V V IS Analog Input Voltage (NO, COM) GND V T A Operating Temperature Range, All Package Types C t r, t f Input Rise or Fall Time, V cc = 3.3 V +.3 V (Enable Input) V cc = 5. V +.5 V 2 ns/v DEVICE JUNCTION TEMPERATURE VERSUS TIME TO.% BOND FAILURES Junction Temperature C Time, Hours Time, Years,32, , , , , , 2. 4,9. NORMALIZED FAILURE RATE FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR T J = 3 C T J = 2 C T J = C T J = C TIME, YEARS Figure 2. Failure Rate vs. Time Junction Temperature T J = 9 C T J = C 2
3 DC CHARACTERISTICS Digital Section (Voltages Referenced to GND) Guaranteed Max Limit Symbol Parameter Condition 55 to 25 C <5 C <25 C Unit V IH V IL I IN Minimum High Level Input Voltage, Enable Inputs Maximum Low Level Input Voltage, Enable Inputs Maximum Input Leakage Current, Enable Inputs V IN = V or GND V to V A V V I CC Maximum Quiescent Supply Current (per package) Enable and VIS = or GND.. 2. A DC ELECTRICAL CHARACTERISTICS Analog Section Guaranteed Max Limit Symbol Parameter Condition 55 to 25 C <5 C <25 C Unit R ON Maximum On Resistance (Figures 2) V IN = V IH V IS = to GND I Is I = <.ma R FLAT(ON) On Resistance Flatness V IN = V IH I Is I = <. ma V IS = V, 2 V, 3.5 V I NO(OFF) Off Leakage Current, Pin 2 (Figure 3) I COM(OFF) Off Leakage Current, Pin (Figure 3) V IN = V IL V NO =. V, V COM = V or V COM =. V and V NO V V IN = V IL V NO = V or. V V COM =. V or V na. na AC ELECTRICAL CHARACTERISTICS (Input t r = t f = 3. ns) Guaranteed Max Limit 55 to 25 C <5 C <25 C Symbol Parameter Test Conditions (V) Min Typ Max Min Typ Max Min Typ Max Unit t ON Turn On Time R L = 3 C L = 35 pf (Figures 4, 5, and 3) t OFF Turn Off Time R L = 3 C L = 35 pf (Figures 4, 5, and 3) ns ns 25, VCC = 5. V C IN C NO or C NC C COM(OFF) C COM(ON) Maximum Input Capacitance, Select Input Analog I/O (switch off) Common I/O (switch off) Feedthrough (switch on). 2 pf 3
4 ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) Limit Symbol Parameter Condition V 25 C Unit BW Maximum On Channel 3dB Bandwidth V IS = dbm 3. 9 MHz or Minimum Frequency Response V IS centered between and GND (Figures 6 and 4) 2 22 V ONL Maximum Feedthrough On Loss V IS = khz 3. 2 db V IS centered between and GND (Figure 6) 2 2 V ISO Off Channel Isolation f = khz; V IS =. V RMS db V IS centered between and GND (Figures 6 and 5) Q Charge Injection V IS = to GND, F IS = 2 khz 3..5 Enable Input to Common I/O t r = t f = 3. ns 3. pc R IS =, C L = pf Q = C L * VV OUT (Figures 6 and 6) THD Total Harmonic Distortion F IS = 2 Hz to MHz, R L = Rgen = 6, C L = 5 pf % THD + Noise V IS = 3. V PP sine wave.5 V IS = 5. VPP sine wave (Figure 7) LEAKAGE (pa).e+5.e+4.e+3.e+2.e+.e+.e.e 2.E 3.E 4.E 5.E 6.E 7 55 I COM(ON) I COM(OFF) I NO(OFF) TEMPERATURE ( C) Figure 3. Switch Leakage vs. Temperature 4
5 NO DUT COM Input V 5% 5%. F 3 V OUT 35 pf V OH 9% 9% Output Input V OL t ON t OFF Figure 4. t ON /t OFF NO DUT COM 3 V OUT Input V VOH 5% 5% 35 pf Output Input V OL t OFF % t ON % Figure 5. t ON /t OFF 5
6 Reference DUT 5 Generator COM NO Transmitted 5 Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. V ISO, Bandwidth and V ONL are independent of the input signal direction. V ISO = Off Channel Isolation = 2 Log V OUT for V IN at khz VIN V ONL = On Channel Loss = 2 Log V OUT for V IN at khz to 5 MHz VIN Bandwidth (BW) = the frequency 3. db below V ONL Figure 6. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/V ONL DUT NO COM V IN GND C L V IN Output Off On Off V OUT Figure 7. Charge Injection: (Q) 6
7 7 6 = R ON ( ) = = 3. = V COM (VOLTS) R ON ( ) C 25 C C 5 C V IS (VOLTS) Figure. R ON vs. V COM and (@25 C) Figure 9. R ON vs. V COM and Temperature, = 2. V C 3 2 R ON ( ) C 25 C 25 C 5 C R ON ( ) C 25 C 5 C V COM (VOLTS) V COM (VOLTS) Figure. R ON vs. V COM and Temperature, = 2.5 V Figure. R ON vs. V COM and Temperature, = 3. V C 55 C R ON ( ) C 5 C TIME (ns) t ON V COM (VOLTS) t OFF (V) Figure 2. R ON vs. V COM and Temperature, = V Figure 3. Switching Time vs. Supply Voltage, T = 25 C 7
8 Bandwidth (On Loss) BANDWIDTH (db/div) Phase (Degrees) = 5. V T A = 25 C 5 PHASE (Degrees) OFF ISOLATION (db/div) 5 = 5. V T A = 25 C.. 3 FREQUENCY (MHz).. FREQUENCY (MHz) 3 Figure 4. ON Channel Bandwidth and Phase Shift Over Frequency Figure 5. Off Channel Isolation = 5. V Q (pc)...6 = 3. V THD (%) 3.3 V.4.2. V V COM (V). FREQUENCY (Hz) Figure 6. Charge Injection vs. V COM Figure 7. THD vs. Frequency DEVICE ORDERING INFORMATION Device Nomenclature Device Order Number Circuit Indicator Technology Device Function Package Suffix Package Shipping NLAS323US NL AS 323 US US 7 mm (7 ) 3 / Tape & Reel NLAS323USG NL AS 323 US US (Pb Free) 7 mm (7 ) 3 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD/D.
9 PACKAGE DIMENSIONS US US SUFFIX CASE ISSUE A X A 5 Y B L 4 G P C T K SEATING D PLANE. (.4) M T X Y R. (.4) V J DETAIL E S U T H N F DETAIL E R. TYP M NOTES:. DIMENSIONING AND TOLERANCING PER ANSI YM, CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSION OR GATE BURR. MOLD FLASH. PROTRUSION AND GATE BURR SHALL NOT EXCEED.4 MM (.55 ) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTER LEAD FLASH OR PROTRUSION. INTER LEAD FLASH AND PROTRUSION SHALL NOT E3XCEED.4 (.55 ) PER SIDE. 5. LEAD FINISH IS SOLDER PLATING WITH THICKNESS OF MM. (3 ). 6. ALL TOLERANCE UNLESS OTHERWISE SPECIFIED ±.5 (.2 ). MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D F G.5 BSC.2 BSC H.4 REF.6 REF J K....4 L M 6 6 N 5 5 P R S U V.2 BSC.5 BSC 9
10 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 27 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2 9 Kamimeguro, Meguro ku, Tokyo, Japan 53 5 Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. NLAS323/D
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Distributed by: www.jameco.com 1-800-831-44 The content and copyrights of the attached material are the property of its owner. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The
NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface
PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V
NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive
BC846BM3T5G. General Purpose Transistor. NPN Silicon
General Purpose Transistor NPN Silicon Moisture Sensitivity Level: ESD Rating: Human Body Model: >4 Machine Model: >4 This is a PbFree Device MAXIMUM RATINGS COLLECTOR Rating Symbol alue Unit CollectorEmitter
MBRS320T3, MBRS330T3, MBRS340T3. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS
MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier... employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry
NSQA6V8AW5T2 Series Transient Voltage Suppressor
Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection.
NTR4101P, NTRV4101P. Trench Power MOSFET 20 V, Single P Channel, SOT 23
NTRP, NTRVP Trench Power MOSFET V, Single P Channel, SOT Features Leading V Trench for Low R DS(on). V Rated for Low Voltage Gate Drive SOT Surface Mount for Small Footprint NTRV Prefix for Automotive
NCS2005. Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output
Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output The provides high performance in a wide range of applications. The offers beyond rail to rail input range, full rail to rail output
NTLJD4116NT1G. Power MOSFET. 30 V, 4.6 A, Cool Dual N Channel, 2x2 mm WDFN Package
NTLJDN Power MOSFET V,. A, Cool Dual N Channel, x mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction x mm Footprint Same as SC 88 Lowest R DS(on) Solution
NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel
Power MOSFET 6 V, 6 A, 16 m, Single N Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q1 Qualified These Devices are Pb Free, Halogen
MBRM110LT3G NRVBM110LT1G NRVBM110LT3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM11LT1G, NRVBM11LT1G, NRVBM11LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial construction
NCP304A. Voltage Detector Series
Voltage Detector Series The NCP0A is a second generation ultralow current voltage detector. This device is specifically designed for use as a reset controller in portable microprocessor based systems where
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection
MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for
NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET
NTHDN Power MOSFET V,.9 A, Dual N Channel ChipFET Features Planar Technology Device Offers Low R DS(on) and Fast Switching Speed Leadless ChipFET Package has % Smaller Footprint than TSOP. Ideal Device
NB2879A. Low Power, Reduced EMI Clock Synthesizer
Low Power, Reduced EMI Clock Synthesizer The NB2879A is a versatile spread spectrum frequency modulator designed specifically for a wide range of clock frequencies. The NB2879A reduces ElectroMagnetic
P SUFFIX CASE 646 Single Supply Split Supplies SO-14 D SUFFIX CASE 751A PIN CONNECTIONS
Dual Operational Amplifier and Dual Comparator The MC05 contains two differential-input operational amplifiers and two comparators, each set capable of single supply operation. This operational amplifier-comparator
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Preferred Device Small Signal MOSFET 500 ma, 60 Volts N Channel Features
NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8
NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free
NDF10N62Z. N-Channel Power MOSFET
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant V DSS R
MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.
MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate
NCP A, Low Dropout Linear Regulator with Enhanced ESD Protection
3.0 A, Low Dropout Linear Regulator with Enhanced ESD Protection The NCP5667 is a high performance, low dropout linear regulator designed for high power applications that require up to 3.0 A current. A
NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device
SM05T1G Series, SZSM05T1G. Transient Voltage Suppressor Diode Array. SOT 23 Dual Common Anode Diodes for ESD Protection
, SZ Transient Voltage Suppressor Diode Array Dual Common Anode Diodes for ESD Protection These dual monolithic silicon TVS diodes are designed for applications requiring transient overvoltage protection
MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in
Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide passivation
NDD60N360U1 35G. N-Channel Power MOSFET. 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.
NDDN3U N-Channel Power MOSFET V, 3 m Features % Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS ( unless otherwise noted) V (BR)DSS R DS(ON)
MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
MUN5DW, NSBCEPDXV6, NSBCEPDP6 Complementary Bias Resistor Transistors R =.7 k, R =.7 k NPN and PNP Transistors with Monolithic Bias Resistor Network () PIN CONNECTIONS () () This series of digital transistors
NUD4700. LED Shunt. Features. Typical Applications MARKING DIAGRAM PIN FUNCTION DESCRIPTION ORDERING INFORMATION.
LED Shunt The is an electronic shunt which provides a current bypass in the case of a single LED going into open circuit. LEDs are by nature quite fragile when subjected to transients and surge conditions.
NLAS4051. Analog Multiplexer/ Demultiplexer. TTL Compatible, Single Pole, 8 Position Plus Common Off
NLAS4 Analog Multiplexer/ Demultiplexer TTL Compatible, SinglePole, 8Position Plus Common Off The NLAS4 is an improved version of the MC4 and MC74HC4 fabricated in submicron Silicon Gate CMOS technology
MUN5311DW1T1G Series.
MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single
NTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m
N-Channel Power MOSFET 6 V, 6 A, 6 m Features Low Gate Charge Fast Switching High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (
UMC2NT1, UMC3NT1, UMC5NT1
UMCNT, UMC3NT, UMC5NT Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor
MMQA Quad Common Anode Series Preferred Devices. SC 74 Quad Monolithic Common Anode. Transient Voltage Suppressors for ESD Protection
MMQA Quad Common Anode Series Preferred Devices SC 74 Quad Monolithic Common Anode Transient Voltage Suppressors for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications
NTD5805N, NVD5805N. Power MOSFET 40 V, 51 A, Single N Channel, DPAK
NTD585N, NVD585N Power MOSFET V, 5 A, Single N Channel, Features Low R DS(on) High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and
NTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUDAPZ Power MOSFET V,. A, Cool Dual P Channel, ESD,.x.x. mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x. mm for Board Space Saving
NCP ma, 10 V, Low Dropout Regulator
15 ma, 1 V, Low Dropout Regulator The is a CMOS Linear voltage regulator with 15 ma output current capability. The device is capable of operating with input voltages up to 1 V, with high output voltage
MMBZ15VDLT3G MMBZ27VCLT1G. 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT-23 Dual Common Cathode Zeners for ESD Protection
MMBZ5VDLT, MMBZ7VCLT Preferred s 40 Watt Peak Power Zener Transient Voltage Suppressors SOT- Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications
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NTD5867NL. N-Channel Power MOSFET 60 V, 20 A, 39 m
N-Channel Power MOSFET 6 V, A, 39 m Features Low R DS(on) High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed
NTLUF4189NZ Power MOSFET and Schottky Diode
NTLUF89NZ Power MOSFET and Schottky Diode V, N Channel with. A Schottky Barrier Diode,. x. x. mm Cool Package Features Low Qg and Capacitance to Minimize Switching Losses Low Profile UDFN.x. mm for Board