NVC6S5A444NLZ. Power MOSFET. 60 V, 78 m, 4.5 A, N Channel

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1 Power MOSFET 6 V, 78 m,.5 A, N Channel Automotive Power MOSFET designed to minimize gate charge and low on resistance. AEC Q qualified MOSFET and PPAP capable suitable for automotive applications. Features.5 V Drive High ESD Protection Low On Resistance CPH6 Package is Pin Compatible with SOT 6 Pb Free, Halogen Free and RoHS Compliance Typical Applications Load Switch Motor Drive Specifications V DSS R DS (on) MAX I D MAX 6 V 78 V V ELECTRICAL CONNECTION N Channel,, 5, 6.5 A ABSOLUTE MAXIMUM RATINGS (T a = 5 C) Parameter Symbol Value Unit Drain to Source Voltage V DSS 6 V Gate to Source Voltage V GSS ± V Drain Current (DC) (Note ) I D.5 A Drain Current (DC) (Note ).5 A Drain Current (Pulse) PW s, duty cycle % Power Dissipation Ta = 5 C (Note ) Power Dissipation Ta = 5 C (Note ) Junction Temperature and Storage Temperature I DP 8 A P D.9 W.97 W Tj, Tstg 55 to +75 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction to Ambient (Note ) R JA 78. C/W (Note ) 5 C/W. Surface mounted on ceramic substrate (9 mm.8 mm).. Surface mounted on FR board using a 9 mm, oz. Cu pad. 6 5 CPH6 CASE 8BD : Drain : Drain : Gate : Source 5 : Drain 6 : Drain MARKING DIAGRAM ZW ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. LOT No Semiconductor Components Industries, LLC, 7 August, 8 Rev. Publication Order Number: NVC6S5ANLZ/D

2 ELECTRICAL CHARACTERISTICS (T a = 5 C) Parameter Symbol Conditions Min Typ Max Unit Drain to Source Breakdown Voltage V (BR)DSS I D = ma, V GS = V 6 V Zero Gate Voltage Drain Current I DSS V DS = 6 V, V GS = V. μa Gate to Source Leakage Current I GSS V GS = ±6 V, V DS = V ± μa Gate Threshold Voltage V GS (th) V DS = V, I D = ma..6 V Forward Transconductance g FS V DS = V, I D = A. S Static Drain to Source On State Resistance R DS (on) I D = A, V GS = V 6 78 m I D = A, V GS =.5 V 8 m Input Capacitance Ciss V DS = V, f = MHz 55 pf Output Capacitance Coss 57 pf Reverse Transfer Capacitance Crss 7 pf Turn ON Delay Time t d (on) See Figure 7. ns Rise Time t r 9.8 ns Turn OFF Delay Time t d (off) ns Fall Time t f ns Total Gate Charge Qg V DS = V, V GS = V, I D =.5 A nc Gate to Source Charge Qgs.6 nc Gate to Drain Miller Charge Qgd. nc Forward Diode Voltage V SD I S =.5 A, V GS = V.86. V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. V V V IN V IN V DD = V I D = A R L = 5 PW = s D.C. % G D V OUT P.G 5 S NVC6S5ANLZ Figure. Switching Time Test Circuit

3 TYPICAL CHARACTERISTICS DRAIN CURRENT, ID A V V.5 V V.5 V VGS = V Ta = 5 C DRAIN TO SOURCE VOLTAGE, VDS V DRAIN CURRENT, ID A VDS = V 5 C Ta = 75 C 5 C 5 DRAIN TO SOURCE VOLTAGE, VGS V Figure. I D V DS Figure. I D V GS STATIC DRAIN TO SOURCE ON STATE RESISTANCE, R DS(on) m ID = A A GATE TO SOURCE VOLTAGE, V GS V Figure. R DS (on) V GS Ta = 5 C STATIC DRAIN TO SOURCE ON STATE RESISTANCE, R DS(on) m AMBIENT TEMPERATURE, Ta C Figure 5. R DS (on) Ta FORWARD TRANSCONDUTANCE, g FS S VDS = V... DRAIN CURRENT, I D A SOURCE CURRENT, I S A VGS = V FORWARD DIODE VOLTAGE, V SD V Figure 6. g FS I D Figure 7. I S V SD

4 TYPICAL CHARACTERISTICS SWITCHING TIME, SW Time - ns ns t d (on) t d (off) t f t r V DD = V V GS = V Ciss, Coss, Crss pf Ciss Coss Crss f = MHz. DRAIN CURRENT, I D A Figure 8. SW TIME I D 5 6 DRAIN TO SOURCE VOLTAGE, V DS V Figure 9. Ciss, Coss, Crss V DS GATE TO SOURCE VOLTAGE, V GS V V DD = V I D =.5 A TOTAL GATE CHARGE, Qg nc Figure. V GS Qg DRAIN CURRENT, I D A I DP = 8 A (PW s) I D =.5 A ms Figure. SOA ms s Operation in this ms area is limited by R DS(on), Ta = 5 C DC Operation (Ta = 5 C) Surface mounted on FR board, using a 9 mm, oz. Cu pad., DRAIN TO SOURCE VOLTAGE, V DS V ALLOWABLE POWER DISSIPATION, P D W Surface mounted on ceramic substrate (9 mm.8 mm). Surface mounted on FR board using a 9 mm, oz. Cu pad AMBIENT TEMPERATURE, Ta C Figure. P D Ta

5 TYPICAL CHARACTERISTICS THERMAL RESISTANCE, R JA C/W. Duty Cycle = R JA = 5 C/W Surface mounted on FR board using a 9 mm, oz. Cu pad.. E PULSE TIME, PT s Figure. R JA PULSE TIME DEVICE ORDERING INFORMATION Device Marking Package Shipping NVC6S5ANLZTG ZW CPH6 NVC6S5ANLZTG (Pb Free / Halogen Free), / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. Since the NVC6S5ANLZ is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 5

6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS CPH6 CASE 8BD ISSUE O DATE NOV DOCUMENT NUMBER: STATUS: NEW STANDARD: Semiconductor Components Industries, LLC, October, Rev. DESCRIPTION: 98AON65E ON SEMICONDUCTOR STANDARD CPH6 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped CONTROLLED COPY in red. Case Outline Number: PAGE OF XXX

7 DOCUMENT NUMBER: 98AON65E PAGE OF ISSUE REVISION DATE O RELEASED FOR PRODUCTION FROM SANYO ENACT# TC 7 TO ON NOV SEMICONDUCTOR. REQ. BY D. TRUHITTE. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Semiconductor Components Industries, LLC, November, Rev. O Case Outline Number: 8BD

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