Smart Pack Electric Co., Ltd< Intelligent Power Module > SPE04M50T-A TRANSFER-MOLD TYPE FULL PACK TYPE
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1 Applications 500V/4A low-loss MOSFET inverter driver for Small Power AC Motor Drives Figure 1 Features 500V Rds(on)=3.5ohm(Max)MOSFET 3-Phase inverter with Gate Drivers and protection Separate Open-Source Pins from Low-Side MOSFETs for Three-Phase -Sensing Gate drive supply range from 10v to 20v Active-High interface, works with 3.3v/5v logic input, Schmitt-trigger input HVIC Temperature-Sensing Built-In for temperature Monitoring HVIC for Gate Driving and Under-voltage Protection Built-In Bootstrap Diodes simplify PCB layout APPLICATION Isolation Rating:1500Vrms/min Detailed Package Outline Drawings Dimensions in mm Smart Pack Electric Co., Ltd 1 / 5 SPE3-TS-019 REV 1.0
2 Pin Configuration and Internal Block Diagram (U) P (U) IN(UH) IN(UL) U NC NU (V) (V) NV IN(VH) IN(VL) V (W) (W) NW IN(WH) IN(WL) W NC Pin Descriptions Figure 2. Bottom view Pin number Pin name Pin Description 1 IC Common Supply Ground 2 (U) Bias Voltage for U-Phase High-Side MOSFET Driving 3 (U) Bias Voltage for U-Phase IC and Low-Side MOSFET Driving 4 IN(UH) Signal Input for U-Phase High-Side 5 IN(UL) Signal Input for U-Phase Low-Side 6 NC No Connection 7 (V) Bias Voltage for V-Phase High Side MOSFET Driving 8 (V) Bias Voltage for V-Phase IC and Low Side MOSFET Driving 9 IN(VH) Signal Input for V-Phase High-Side 10 IN(VL) Signal Input for V-Phase Low-Side 11 Output for HVIC Temperature Sensing 12 (W) Bias Voltage for W-Phase High-Side MOSFET Driving 13 (W) Bias Voltage for W-Phase IC and Low-Side MOSFET Driving 14 IN(WH) Signal Input for W-Phase High-Side 15 IN(WL) Signal Input for W-Phase Low-Side 16 NC No Connection 17 P Positive DC-Link Input 18 U Output for U-Phase & Bias Voltage Ground for High-Side MOSFET Driving 19 NU Negative DC-Link Input for U-Phase 20 NV Negative DC-Link Input for V-Phase 21 V Output for V-Phase & Bias Voltage Ground for High-Side MOSFET Driving 22 NW Negative DC-Link Input for W-Phase 23 W Output for W Phase & Bias Voltage Ground for High-Side MOSFET Driving Smart Pack Electric Co., Ltd 2 / 5 SPE3-TS-019 REV 1.0
3 Absolute Maximum Ratings (TJ= 25 C, Unless Otherwise Specified) Inverter Part VDSS Drain-Source Voltage of Each V 500 MOSFET ID Each MOSFET, Continuous TC = 25 C 4 A IDM Each MOSFET Pulse, Peak TC = 25 C, Less than 100us 12 A IDrms Each MOSFET, Rms TC = 25 C, FPWM <20KHz 4 Arms PD Maximun Power Dissipation TC = 25 C For each MOSFET 16.6 W Control Supply Voltage Applied between and 20 V S High-side Bias Voltage Applied between and 20 V VIN Input Signal Voltage Applied between VIN and -0.3~+0.3 V Bootstrap Diode Part VRRMB Maximum Repetitive Reverse Voltage 500 V IFB Forward TC = 25 C 1 A IFPB Forward Peak, Peak TC = 25 C,Under 1ms Pulse Width 2.5 A Total System TJ Operating Junction Temperature -40~150 TSTG Storage Temperature TC = 25 C -40~125 VISO Isolation Voltage 60Hz, Sinusoidal, AC 1 minute, between pins and heat-sink plate 1500 V Note: 1. To insure safe operation of the IPM, the average junction temperature should be limited to TJ 150 C (@Tc 100 C). Thermal Resistance Rth(j-c) Junction to Case Thermal resistance For Each MOSFET 7.5 C/W Smart Pack Electric Co., Ltd 3 / 5 SPE3-TS-019 REV 1.0
4 Electrical Characteristics (TJ= 25 C, Unless Otherwise Specified) Inverter Part BVDSS Drain - Source Breakdown Voltage VIN = 0 V, ID = 1 ma V IDSS Zero Gate Voltage Drain VIN = 0 V, VDS = 500 V ua D Drain - Source Diode Forward Voltage = S = 15V, VIN = 0 V, ID = -1 A V RDS(on) Drain-Source Turn-On Resistance = S = 15 V, VIN = 5 V, ID =1A ohm ton ns toff VPN = 300 V, = S = 15 V, ID = 1A ns trr Switching Times VIN = 0/5 V, Inductive Load L = 3 mh ns EON High- and Low-Side MOSFET Switching uj EOFF uj Reverse Bias Safe VPN = 400 V, = S = 15 V, ID = IDP, RBSOA Operating Area VDS = BVDSS,TJ = 150 C High- and Low-Side MOSFET Switching Full Square IQCC Quiescent Supply = 15V Applied between and VIN = 5V ua IQB Applied between (U) - Quiescent S Supply VDB = 15V U, VIN = 5V (V) - V, (W) - W ua Under-Voltage Protection Detection UD Low-Side Under-Voltage V Level Protection UR Under-Voltage Protection Reset Level V S Under-Voltage Protection Detection USD High-Side Under-Voltage V Level Protection USR S Under-Voltage Protection Reset Level V HVIC Temperature Sensing Voltage Output = 15 V, THVIC = 25 C mv VIH ON Threshold Voltage Logic HIGH Level, Applied between VIN and V VIL OFF Threshold Voltage Logic Low Level, Applied between VIN and V VF BSD Forward voltage IF = 0.1 A, TC = 25 C V trr Reverse Recovery Time IF = 0.1 A, TC = 25 C ns Smart Pack Electric Co., Ltd 4 / 5 SPE3-TS-019 REV 1.0
5 Recommended Operating Conditions Smart Pack Electric Co., Ltd< Intelligent Power Module > VPN Supply Voltage Applied between P and N V Control Supply Voltage Applied between and V S High-Side Bias Voltage Applied between and V Input ON Threshold VIN(ON) V Voltage Applied between VIN and Input OFF Threshold VIN(OFF) V Voltage tdead Blanking Time for Preventing Arm-Short = S = 13.5 ~ 16.5 V, TJ <150 C us fpwm PWM Switching Frequency TJ <150 C KHz Smart Pack Electric Co., Ltd 5 / 5 SPE3-TS-019 REV 1.0
Motion-SPM. FSB50250UD Smart Power Module (SPM ) General Description. Features. Absolute Maximum Ratings. Symbol Parameter Conditions Rating Units
FSB50250UD Smart Power Module (SPM ) Features 500V R DS(on) =4.2W(max) 3-phase FRFET inverter including high voltage integrated circuit (HVIC) 3 divided negative dc-link terminals for inverter current
Smart Pack Electric Co., Ltd <Intelligent Power Module> SPE05M50F-A TRANSFER-MOLD TYPE FULL PACK TYPE
Control Part Applications 500V/5A low-loss MOSFET inverter driver for Small Power AC Motor Drives Figure 1 Features 500V Rds(on)=1.8Ohm(Max)MOSFET 3-Phase inverter with Gate Drivers and protection Separate
Smart Pack Electric Co., Ltd <Intelligent Power Module> SPE10S60F-A TRANSFER-MOLD TYPE FULL PACK TYPE
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Motion-SPM. FSB50550UTD Smart Power Module (SPM ) General Description. Features. Absolute Maximum Ratings. Symbol Parameter Conditions Rating Units
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Features. Description. Table 1: Device summary Order code Marking Package Packing STF5N60M2 5N60M2 TO-220FP Tube
N-channel 600 V, 1.3 Ω typ., 3.5 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS@ TJmax RDS(on) max. ID STF5N60M2 650 V 1.4 Ω 3.5 A Extremely low gate
TC = 25 C unless otherwise noted. Maximum lead temperature for soldering purposes, 300 1/8" from case for 5 seconds
General Description This Power MOSFET is produced Features using Maple semi s Advanced Super-Junction technology. - 7.6A, 500V, R DS(on) typ. = 0.5Ω@ = 10 V This advanced technology has been especially
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PS21661-RZ/FR PS21661-FR. APPLICATION AC100V~200V, three-phase inverter drive for small power motor control.
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QJD1211 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 1 Amperes/12 Volts Y A AA F D AB Z AC Q DETAIL "B" Q P Q U B
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SI-TECH SEMICONDUCTOR CO.,LTD S85N10R/S
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Features. Description. Table 1: Device summary Order code Marking Package Packing STF140N6F7 140N6F7 TO-220FP Tube
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Features. Description. Table 1: Device summary Order code Marking Package Packaging STW56N60M2-4 56N60M2 TO247-4 Tube
N-channel 600 V, 0.045 Ω typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STW56N60M2-4 650 V 0.055 Ω 52 A Excellent switching
N-channel 600 V, 0.68 Ω typ., 10 A, SuperMESH Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description
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VDS (V) min 600 VTDS (V) max 750 RDS(on) (mω) max* 63. Qrr (nc) typ 136. * Dynamic R(on)
600V Cascode GaN FET in TO-247 (source tab) Not recommended for new designs see TP65H050WS Description The TPH3205WS 600V, 52mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer
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Features. Description. Table 1: Device summary Order code Marking Package Packing STF23N80K5 23N80K5 TO-220FP Tube
N-channel 800 V, 0.23 Ω typ., 16 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STF23N80K5 800 V 0.28 Ω 16 A 35 W TO-220FP Figure
Automotive-grade N-channel 40 V, 2.9 mω typ., 55 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package. Features. Description
Automotive-grade N-channel 40 V, 2.9 mω typ., 55 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code VDS RDS(on) max. ID STL120N4F6AG 40 V 3.6 mω 55 A
Features. Description. Table 1: Device summary Order code Marking Package Packing STL10N65M2 10N65M2 PowerFLAT 5x6 HV Tape and reel
N-channel 650 V, 0.85 Ω typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code VDS RDS(on) max. ID STL10N65M2 650 V 1.00 Ω 4.5 A 1 2 3 4 PowerFLAT
SLLIMM - 2nd series IPM, 3-phase inverter, 35 A, 600 V short-circuit rugged IGBT. Description. Table 1: Device summary
SLLIMM - 2nd series IPM, 3-phase inverter, 35 A, 600 V short-circuit rugged IGBT Datasheet - production data Features IPM 35 A, 600 V 3-phase IGBT inverter bridge including 2 control ICs for gate driving
SLLIMM - 2nd series IPM, 3-phase inverter, 15 A, 600 V short-circuit rugged IGBT. Description. Table 1: Device summary
SLLIMM - 2nd series IPM, 3-phase inverter, 15 A, 600 V short-circuit rugged IGBT Datasheet - production data Features IPM 15 A, 600 V 3-phase IGBT inverter bridge including 2 control ICs for gate driving
N-channel 650 V, 0.15 Ω typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description.
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Features. Description. Table 1: Device summary. Order code Marking Package Packaging SCT30N120 SCT30N120 HiP247 Tube
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mω (typ., TJ = 150 C) in an HiP247 package Datasheet - production data Figure 1: Internal schematic diagram G(1) D(2, TAB) S(3) AM01475v1_noZen Features Very
Features. Table 1: Device summary Order code Marking Package Packing STW75NF30 75NF30 TO-247 Tube
N-channel 300 V, 35 mω typ., 60 A STripFET II Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW75NF30 300 V 45 mω 60 A 320 W TO-247 1 2 3 Exceptional
Features. Description. Table 1: Device summary. Order code Marking Package Packing STW75N60M6 75N60M6 TO-247 Tube
N-channel 600 V, 32 mω typ., 72 A MDmesh M6 Power MOSFET in TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID STW75N60M6 600 V 36 mω 72 A 3 2 1 TO-247 Figure 1: Internal
N-channel 30 V, 2.15 mω typ., 120 A Power MOSFET in a TO-220 package. Features. Order code. Description. AM01475v1_Tab
N-channel 30 V, 2.15 mω typ., 120 A Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STP200N3LL 30 V 2.4 mω 120 A 176.5 W Very low on-resistance
Features. Description. Table 1: Device summary Order code Marking Package Packing STL3NK40 3NK40 PowerFLAT 5x5 Tape and reel
STL3NK40 N-channel 400 V, 4.5 Ω typ., 0.43 A, SuperMESH Power MOSFET in a PowerFLAT 5x5 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STL3NK40 400 V 5.5 Ω 0.43 A 2.5
N-channel 30 V, 2.8 mω typ., 80 A STripFET H7 Power MOSFET plus monolithic Schottky in a DPAK package. Features. Description
N-channel 30 V, 2.8 mω typ., 80 A STripFET H7 Power MOSFET plus monolithic Schottky in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STD90NS3LLH7 30 V 3.4 mω 80
VDS (V) min 600 VTDS (V) max 750 RDS(on) (mω) max* 180. Qrr (nc) typ 54. * Dynamic R(on)
600V Cascode GaN FET in TO-220 (drain tab) Description The 600V, 150mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge, faster
VGS = 4.5V, TC = 25 C Continuous Drain Current 2.6 A
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Features. Description. Table 1: Device summary Order code Marking Package Packing STN3NF06L 3NF06L SOT-223 Tape and reel
N-channel 60 V, 0.07 Ω typ., 4 A STripFET II Power MOSFET in a SOT-223 package Datasheet - production data Features Order code VDS RDS(on) max. ID STN3NF06L 60 V 0.1 Ω 4 A Exceptional dv/dt capability
HEXFET MOSFET TECHNOLOGY
PD-90712C POWER MOSFET THRU-HOLE (TO-254) IRFM360 400V, N-CHNNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM360 0.20 Ω 23 HEXFET MOSFET technology is the key to International Rectifier
TO-220 G D S. T C = 25 C unless otherwise noted
500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state
N-channel 600 V, Ω typ., 34 A MDmesh M2 EP Power MOSFETs in D²PAK, TO-220 and TO-247 packages. Features STW42N60M2-EP.
N-channel 600 V, 0.076 Ω typ., 34 A MDmesh M2 EP Power MOSFETs in D²PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB TAB Order code VDS @ TJmax RDS(on) max. ID STB42N60M2-EP D²PAK
Automotive-grade dual N-channel 30 V, 5.9 mω typ., 20 A STripFET H5 Power MOSFET in a PowerFLAT 5x6 double island package. Features.
Automotive-grade dual N-channel 30 V, 5.9 mω typ., 20 A STripFET H5 Power MOSFET in a PowerFLAT 5x6 double island package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STL66DN3LLH5
FSBF15CH60BT. Motion SPM 3 Series. FSBF15CH60BT Motion SPM 3 Series. Features. General Description. Applications.
FSBF15CH60BT Motion SPM 3 Series Features UL Certified No. E209204 (UL1557) 600 V - 15 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection Low-Loss, Short-Circuit Rated IGBTs Built-In Bootstrap
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APT3NB2C3G APT3NLC3G *G Denotes RoHS Compliant, Pb Free Terminal Finish. V 3A.15Ω Super Junction MOSFET T-MAX COOLMOS TO-26 Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance Ultra Low Gate
TO-220F. 1. Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW P 4N60 SW4N60 TO-220 TUBE 2 SW F 4N60 SW4N60 TO-220F TUBE
N-channel MOSFET Features High ruggedness R DS(ON) (Max 2.2 Ω)@V GS =0V Gate Charge (Typ 30nC) Improved dv/dt Capability 00% Avalanche Tested 2 3 TO-220F 2 3 TO-220 BS : 600V I D : 4.0A R DS(ON) : 2.2ohm
Features. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STF4N90K5 4N90K5 TO-220FP Tube
N-channel 900 V, 1.90 Ω typ., 4 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max. ID STF4N90K5 900 V 2.10 Ω 4 A TO-220FP Figure 1: Internal
Features. Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient /W RθJC Thermal Resistance Junction to Case
General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
N-channel 650 V, Ω typ., 16 A MDmesh M2 Power MOSFET in D2PAK, TO-220FP and TO-220 packages. Features STP24N65M2.
STB24N65M2, STF24N65M2, STP24N65M2 N-channel 650 V, 0.185 Ω typ., 16 A MDmesh M2 Power MOSFET in D2PAK, TO-220FP and TO-220 packages Datasheet - production data Features Order codes VDS RDS(on) max ID
Automotive-grade N-channel 40 V, 1.3 mω typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package. Features. Description
Automotive-grade N-channel 40 V, 1.3 mω typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V DS RDS(on) max ID STL210N4F7AG 40 V 1.6 mω 120
TPH3205WSB. 650V Cascode GaN FET in TO-247 (source tab)
650V Cascode GaN FET in TO-247 (source tab) Description The TPH3205WSB 650V, 52mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge,
IRF9230 JANTXV2N6806
PD-90548D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE -TO-204AE (TO-3) Product Summary Part Number BVDSS RDS(on) ID IRF9230-200V 0.80 Ω -6.5A IRF9230 JANTX2N6806 JANTXV2N6806 REF:MIL-PRF-19500/562
Features. Description. AM15810v1. Table 1: Device summary Order code Marking Package Packing STL8N6F7 8N6F7 PowerFLAT 3.3x3.
N-channel 60 V, 0.019 Ω typ., 8 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package Datasheet - production data Features Order code VDS RDS(on) max ID STL8N6F7 60 V 0.023 Ω 8 A 1 2 3 4 Among the
STGIPQ3HD60-HL, STGIPQ3HD60-HZ
STGIPQ3HD60-HL, STGIPQ3HD60-HZ SLLIMM nano - 2 nd series IPM, 3 A, 600 V, 3-phase IGBT inverter bridge Datasheet - production data N2DIP-26L type Z Features N2DIP-26L type L IPM 3 A, 600 V, 3-phase IGBT
TO-220. Item Sales Type Marking Package Packaging 1 SW P 640 SW640 TO-220 TUBE 2 SW W 640 SW640 TO-3P TUBE
N-channel MOSFET Features High ruggedness R DS(ON) (Max 0.8 Ω)@V GS =0V Gate Charge (Typical 35nC) Improved dv/dt Capability 00% Avalanche Tested 2 3 2 3. Gate 2. Drain 3. Source General Description This
PS21963-S Intellimod Module Dual-In-Line Intelligent Power Module 10 Amperes/600 Volts
Dual-In-Line Intelligent Power Module R O A D N P X K C L FF R U 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 18 19 20 HEATSINK SIDE Outline Drawing and Circuit Diagram 21 Dimensions Inches Millimeters A
IRFF9130 JANS2N6849 JANTXV2N V, P-CHANNEL. Absolute Maximum Ratings. Features: 1 PD D. REPETITIVE AVALANCHE AND dv/dt RATED
PD - 90550D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS RDS(on) ID IRFF9130-100V 0.30Ω -6.5A IRFF9130 JANTX2N6849 JANTXV2N6849 JANS2N6849
SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) 60V, N-CHANNEL. Absolute Maximum Ratings PD-94401B
PD-9440B RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) 60V, N-CHANNEL Product Summary Part Number Radiation Level RDS(on) QG 00K Rads (Si) 6.mΩ 60nC IRHSLNA53064 300K Rads (Si) 6.mΩ 60nC IRHSLNA54064
PKP3105. P-Ch 30V Fast Switching MOSFETs
Super Low Gate Charge % EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS RDSON ID -3V mω -6A Description TO22 Pin
VDS (V) min 650 VTDS (V) max 800 RDS(on) (mω) max* 130. Qrr (nc) typ 54. * Dynamic R(on)
650V Cascode GaN FET in TO-220 (source tab) Description The TPH3208PS 650V, 110mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge,
Features. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STWA48N60DM2 48N60DM2 TO-247 long leads Tube
N-channel 600 V, 0.065 Ω typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package Datasheet - production data Features Order code VDS RDS(on) max. ID STWA48N60DM2 600 V 0.079 Ω 40 A Fast-recovery
SGP100N09T. Symbol Parameter SGP100N09T Unit. 70* -Continuous (TA = 100 )
SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power Transistor SG*100N09T Rev. 1.01 Jun. 2016 SGP100N09T 100V N-Channel MOSFET Description The SG-MOSFET
STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5
STD5N95K5, STF5N95K5, STP5N95K5, N-channel 950 V, 2 Ω typ., 3.5 A MDmesh K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK Datasheet - production data TAB DPAK 2 3 1 TAB 1 2 3 TO-220FP 3 TAB 1 2 1 2
PM200CVA060 PM200CVA060. APPLICATION General purpose inverter, servo drives and other motor controls LABEL PM200CVA060
MITSUBISHI PMC6 PMC6 TYPE PMC6 FETURE φ, 6 Current-sense IGBT for khz switching Monolithic gate drive & protection logic Detection, protection & status indication circuits
P-Channel MOSFET SI2369DS-HF (KI2369DS-HF) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 *1*2 *1*2 *1*2 *1*2
Features VDS (V) =-3V ID =-7.6A (VGS =±V) RDS(ON) < 9mΩ (VGS =-V) RDS(ON) < 34mΩ (VGS =-6V) RDS(ON) < 4mΩ (VGS =-4.5V).8 -. +. SOT-3-3 3.9 -. +..4 -. +..95 -. +..9 -. +. +. -..6.4.55 Unit: mm.5 -. +. -..68
PRELIMINARY. VDSS (V) 600 V(TR)DSS (V) 750 RDS(on)eff (mω) max* 60. QRR (nc) typ 120. QG (nc) typ 22 PRELIMINARY
PRELIMINARY TPH3205ESBET 600V GaN FET in TO-268 (source tab) Description The TPH3205ESBET 600V, 49mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT
2N7630M2 THRU-HOLE (14-LEAD FLAT PACK) TECHNOLOGY. Product Summary
PD-9736 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (4-LEAD FLAT PACK) 2N763M2 IRHLA797Z4 6V, Quad P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLA797Z4 K Rads
Features. Description. Table 1: Device summary Order code Marking Package Packaging STW45NM50 W45NM50 TO-247 Tube
N-channel 500 V, 0.08 Ω typ., 45 A MDmesh Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max ID 500 V 0.1 Ω 45 A TO-247 1 3 2 100% avalanche tested High dv/dt
SURFACE MOUNT (SMD-1) 100V, P-CHANNEL. Absolute Maximum Ratings. Product Summary
PD-9454A HEXFET POWER MOSFET SURFACE MOUNT (SMD-) IRF5N52 V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5N52 -V.6Ω -3A Fifth Generation HEXFET power MOSFETs from International Rectifier
IPS042G DUAL FULLY PROTECTED POWER MOSFET SWITCH. Product Summary
Data Sheet No.PD 653-J IPS4G DUAL FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description
TPH3212PS. 650V Cascode GaN FET in TO-220 (source tab)
650V Cascode GaN FET in TO-220 (source tab) Description The TPH3212PS 650V, 72mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge,
MG200Q2YS60A(1200V/200A 2in1)
TOSHIBA IGBT Module Silicon N Channel IGBT (V/A in) High Power Switching Applications Motor Control Applications Integrates a complete half bridge power circuit and fault-signal output circuit in one package.
n Low RDS(on) n Avalanche Energy Ratings n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight
PD - 9472 HEXFET POWER MOSFET SURFACE MOUNT (SMD-.5) IRL7NJ382 2V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRL7NJ382 2V.85 22A* Seventh Generation HEXFET power MOSFETs from International
50V/5.3A P-Channel Power MOSFET MSS5P05D / MSS5P05U. General Description. Features. Pin Configuration DPAK (TO-252) IPAK (TO-251) MSS5P05U MSS5P05D
50V/5.3A P-Channel Power MOSFET 50V/5.3A P-Channel Power MOSFET General Description Low on resistance Improved inductive ruggedness Fast switching time Rugged polysilicon gate cell structure Lower input
Features. Description. Table 1: Device summary Order code Marking Package Packing STD30NF06LAG D30NF06L DPAK Tape and reel
Automotive-grade N-channel 60 V, 0.022 Ω typ., 35 A STripFET II Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID STD30NF06LAG 60 V 0.028 Ω 35 A AEC-Q101
Features. Description. Table 1: Device summary Order code Marking Package Packing STW56N65DM2 56N65DM2 TO-247 Tube
N-channel 650 V, 0.058 Ω typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW56N65DM2 650 V 0.065 Ω 48 A 360 W TO-247 1 3
SMC6216SN. Single N-Channel MOSFET FEATURES VDS = 60V, ID = 3.5A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION
SMC66SN Single N-Channel MOSFET DESCRIPTION SMC66 is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited
2N7624U3 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) 60V, P-CHANNEL TECHNOLOGY. Absolute Maximum Ratings
PD-9732 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 2N7624U3 IRHLNJ79734 6V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLNJ79734 K Rads (Si).72Ω
IRFE420 JANTX2N6794U JANTXV2N6794U REF:MIL-PRF-19500/ V, N-CHANNEL
PD - 93986A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) IRFE420 JANTX2N6794U JANTXV2N6794U REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on)