ADVANCED LEVEL PHYSICS

Size: px
Start display at page:

Download "ADVANCED LEVEL PHYSICS"

Transcription

1 AL Syllabus Electronics diode Power supplies The NPN silicon bipolar junction transistor Input, current transfer, collector, and input/putout voltage characteristics in the common emitter configuration. Current amplification factor b. Notes The diode as an uni-directional circuit element (internal mechanism not required). Half-waveband full-wave rectification. Bridge rectifier and application in a.c. measuring instruments. Full wave rectifier with storage capacitor and inductor smoothing. Qualitative treatment only. The transistor as a three-terminal device, the properties of which can be deduced, the propertied of which can be deduced from measurements at its terminals. Knowledge of internal structure not required. Knowledge of internal mechanisms not required. Determination from current transfer characteristic. Simple calculations involving base and collector currents, input and output voltages. Linear voltage amplification Single NPN transistor in the common emitter configuration. Simple biasing techniques. Derivation of voltage gain»-b R L / R B. I. Vacuum Diode Construction: Heater with filament made of tungsten Circuit for obtaining I-V characteristics Anode Vacuum To 6.3V V To 6.3V Cathode ma From S to O, V is negative, hence I = 0. I/A From O to P, as the p.d. of diode increases, the attraction of electrons by electric field increases, hence current increases. At P, since the rate of emitting electrons from cathode is dependent on the heater current (or voltage), for an unchanged current, the rate of productions of electrons is S O fixed. Higher heater voltage Lower heater voltage P Q V/V Therefore, at P, all electrons produced will be attracted to the anode as soon as they are emitted since the anode s potential is too high. An increase of diode p.d. will not increase current I since I is limited by the rate of productions of electrons. So, from P onwards, the current is saturated. CSKMS AL PHYSICS E 2004 by Leo Chung P.1

2 A higher heater potential applied will: (i) have a greater current at the same p.d. (ii) have a higher saturation current. II. Electronic Diode A. Construction B. I-V characteristics I F = Forward bias current V F = Forward bias voltage I R = Reverse bias current V R = Reverse bias voltage V B = Reverse voltage at which the diode breakdown Turn on voltage 0.6 V Resistance at forward bias = 1 / slope after turn on voltage; which is very small. Resistance at reverse bias before break down = 1 / slope between OA; which is very great. Resistance after break down It follows from the graph that the forward current I F is small until the forward voltage is about 0.6 V, thereafter very small change in V F causes a large increase in I F. The reverse current I R is negligible and remains so as the reverse voltage V R is increased. At a certain reverse voltage V B, called the breakdown voltage, the insulation of the barrier layer breaks down and I R increases suddenly and rapidly and damage may occur by overhearing. The resistance is very small, indicating that a large current can pass through it even at a median CSKMS AL PHYSICS E 2004 by Leo Chung P.2

3 voltage. C. Other Junction Diodes (a) Light emitting diode (LED) In recombining the holes and electrons of a forward biased p-n junction, a quantum of energy will be released. When this quantum is specifically chosen, many of these quanta are emitted as light (in gallium arsenide phosphide) So, LED are used as indicator lamps. The advantages of LEDs over filament lamps are their small size, reliability, long life and high operating speed. (b) Zener diode The I-V characteristic of a zener diode is similar to the figure shown in section A, in addition that the breakdown region AB is nearly perpendicular to the y-axis (V). When the zener diode is reversed bias and the p.d. across it reaches zener p.d., the diode break down and the current flows through it will be unlimited except limited by a resistor connected in series. The voltage across the diode will be maintained at V B. The zener diode is used to stablize the voltage output of a power supply. In the figure, (note that the zener diode is connected in reverse sense) the resistor R is to limit the maximum current flows through the diode. E.g. E = 10V, Zener diode: 6.2 V, 1.3 W Calculate the minimum values of R to protect the diode. E R + To drive a radio In this circuit, even when the radio does not draw current, the current passes through the diode would not exceed its maximum limit (or the diode will be burnt out). When the radio draws current, the current through the diode become less. However, the voltage across the CSKMS AL PHYSICS E 2004 by Leo Chung P.3

4 6.2 V? III. Rectification of A.C. Rectification Circuit A. Rectifiers radio is always at V B no matter how much current is drawn by the radio, provided that the current drawn by radio is less than the I MAX of the diode. Why we use a zener diode to provide a steady 6.2 V output instead of using a battery of Having a low resistance in forward direction & high resistance in reverse direction. Three TYPES of rectifiers: (i) (ii) (iii) Thermionic diode valve bulky, expensive & high power consumption, but it is still being used in high quality Hi-Fi circuits. Selenium rectifier not being used today, and is replaced by Semi-conductor diode cheap, wide range of operating conditions (e.g. different diodes ranging from 0.5 V to 500 V are available), reliable and small size. B. Half-wave rectification Connect up the circuit as shown below. Observe the input voltage Vin of the circuit and the output voltage Vout across the load with a double beam oscilloscope. As expected the diode conduct in forward bias; the output waveform is almost identical with the input waveform. In reverse bias, the diode does not conduct and the output voltage is zero. Thus the current through the load is always in one direction, although the magnitude varies; it is a fluctuation d.c. The diode acts as a rectifier. The process is known as half-wave rectification. Note that V in = V O + V AB, Drawbacks: (i) the d.c. is too fluctuating. (ii) half of the time there is no current passing. CSKMS AL PHYSICS E 2004 by Leo Chung P.4

5 C. Full-wave rectification by center-tap transformer + = current flow in +ve half cycle = current flow in ve half cycle the amplitude of I depends on the value of R. The transformer should have a turn ratio of 1:2, so that the voltage output is the same as V in. The current ratio, in such case, is 1:1 (Why?) Drawbacks: A step-up center-tap transformer is needed. D. Bridge full-wave rectifier Observe the p.d. across the load with a CRO. the trace is same as above Fig. Suppose in the 1st half-cycle, A is at a higher potential than B. Then current flows from A to B via D 1, R and D 2..So + is at a higher than -. In the 2nd half-cycle, B is at a higher potential than A. Then current flows from B to A via D 3, R and D 4. Again + is at a higher potential than -. Since this circuit is the simplest and cheap, bridge rectifier is the most common rectifier used in nowadays circuitry. IV. Smoothing Circuits A. Reservoir Capacitor It is a large capacitor connected in parallel with load R, its value depends on the current drawn by the load. CSKMS AL PHYSICS E 2004 by Leo Chung P.5

6 BC Charging (as V in > V C ) AB Discharging (as V C > V in ) The C 1 must be large so that the time constant RC 1 is large compared with the period of the rectified d.c. input. A large C 1 gives a better smoothing performance. However, the value of C 1 is limited by the large initial surge current (as C 1 is at 0 p.d. at starting) which may damage the rectifier circuit. How can we estimate the power output to the load? B. Capacitor-input filter A reservoir capacitor has a useful smoothing effect, but it is usually supplemented by a filter circuit. C 1 is the reservoir capacitor L is a choke (i.e. an iron-cored inductor) of about 15 H (very large inductance). C 2 is a large capacitor. Let V 1 be the voltage across the capacitor C 1. V 1 can be resolved into a steady d.c. component + an a.c. component. In order to understand the behaviour of the filter, we redraw the above circuit. CSKMS AL PHYSICS E 2004 by Leo Chung P.6

7 X L = impedance of L = ωl Hence, for d.c. component, X L = 0 While for a.c. component, X L is large. X C2 = impedance of C = 1/ωC Hence, for d.c. component, X C2 = While for a.c. component, X C2 is small compared with X L. So, when we consider the X L & X C2 as potential divider, the a.c. ripple is mainly developed across L while the d.c. component is developed across C 2 only. Hence, the C 2 output give a very steady d.c. voltage. C. Laboratory H.T.Power supply unit The H.T, power supply employs the principle of the smoothing technique discussed above. The 6.3 V output is for doing thermionic emission experiment which supply voltage for the heater. The output resistor is a variable resistor acts as a potential divider. When the output voltage is smaller, much energy is dissipated in the potential divider, and as the resistor used must have a high power rating (usually about 50 W) and have a good channel to ventilate its excess heat developed. Also, the input voltage 240 V in r.m.s. values. Hence, the 350 V secondary r.m.s. voltage has a peak voltage of V 500 V. So the H.T. power supply gives a d.c. output of 500 V at no load and nearly 400 V when 100 ma (full-load current) is supplied. CSKMS AL PHYSICS E 2004 by Leo Chung P.7

8 V. Transistor A. Construction and Operating Principle There are 2 types of transistor, namely the bipolar or junction transistor and the unipolar or field effect transistor (FET). We would consider the bipolar transistor only. I. Construction There are 2 kinds of junction transistors: n-p-n type & p-n-p type. A transistor has 3 terminals: (i) emitter E; (ii) base B; (iii) collector C. II. Operating principle Consider the n-p-n transistor: V C > V B > V E ; so CB junction is reverse biased & BE junction is forward biased. The emitter is heavily doped with electrons, while the base is highly doped with holes. When the base-emitter is about +0.6 V, electrons cross the junction from E into the base (if the biased voltage is less than +0.6 V, the flow of electron is extremely small and we say the transistor has not been turned on). The moving of emitter electrons from the external circuit constitutes the emitter current (of course in opposite direction), some electrons flow from E & recombine with the holes in B. But since the base is very thin & the p-type doping is very light, only ~ 1% of emitter electrons recombine with the holes. Most of the electrons are swept through the base due to being attracted by the positive voltage on the collector & cross the base-collector junction to become the collector current in the external circuit. The small amount of electron-hole recombination which occurs in the base gives it a momentary negative charge which is immediately compensated by battery B 1 supplying it with (positive) holes. The flow of holes to the base from the external circuit creates a small base current. This keeps the base-emitter junction CSKMS AL PHYSICS E 2004 by Leo Chung P.8

9 forward biased and so maintain the larger collector current. Transistor action is the turning on (and controlling) of a large current through the high resistance (reverse biased) collector-base junction by a small current through the low-resistance (forward biased) base-emitter junction. B. The characteristic of an NPN silicon transistor in the Common Emitter configuration 1. The Input characteristic A graph showing the variation of the base current I b with the base-emitter potential difference V BE is called the input characteristic. Typical result: Circuit: R b Input Characteristic The base-emitter p.d. should be measured with an electrometer. Since the base currents are usually small and the voltmeter must take a current which is small compared with I b, so an electrometer is suitable. The base current only flows when the base is positive with respect to the emitter. The base current only flows when V BE is greater than ~0.5 V. Beyond 0.5 V, the base current rises very rapidly. The input characteristic indicates that V BE will be about 0.7 V for a large range of values of base current. This is a useful point to remember in design circuit. Note that I b is not proportional to V BE, i.e. base-emitter junction is not obey Ohm s law & does not have a constant resistance. And the value of the resistance r between base & emitter depends on the base current. CSKMS AL PHYSICS E 2004 by Leo Chung P.9

10 The resistor R b in the base circuit serves two purposes: It limits the base current to a maximum allowed value. Since excessive base current and produce effects which damage the transistor. If the resistor is omitted a very small variation in position of the potentiometer wiper would cause a very large variation in base current. In other words, the presence of R b, a much larger movement of the potentiometer wiper is required for the same current range, and this adjustment much easier. 2. The Current Transfer Characteristic A graph showing the variation of the collector current I C with the base current I b is called the current transfer characteristic. Typical result: R b Current Transfer Characteristic Notes: The p.d. between collector & emitter is fixed by the 6 V battery in the collector-emitter circuit. The battery should connected such that the collector is positive with respect to the emitter. The path of the collector current is from 6 V battery, into the collector, out from the emitter and back to the 6 V battery. I C is much larger than I B, and for most small or medium power transistors will be measured in milliamperes. In fact, I e = I B + I C, but since I C >> I B I e I C The above transistor circuit is connected in the common emitter configuration. Since the CSKMS AL PHYSICS E 2004 by Leo Chung P.10

11 emitter lead is common to both the input circuit & the output circuit. Current Amplification: The above current transfer characteristic is the key to understanding current amplification. Since the characteristic is linear over a large part of its range, I C is approximately proportional to I B. Moreover, a small variation in I B cause a change in I C which is much larger than the change in I B. The current gain of the transistor is defined as: δi β = δi where β is the slope of the current transfer characteristic. The d.c. current gain is also defined as I C / I B. Typical value of β is greater 100. C B 3. The Collector Characteristic Typical result: A graph showing the variation of the collector current I C with the collector-emitter potential difference V CE for a constant value of the base current I B is called a collector characteristic. Notes: For V CE greater than about 0.2 V, I C is almost constant for a given I B. i.e. the current flowing from collector to emitter is almost independent of the potential difference between the collector & emitter. The transistor does not obey Ohm s law. It is usual to plot a family of curves for different values of I B. These show quite clearly that I C is determined by the values of I B and the curves are approximately equally spaced. This reflects the linear current amplification property of the transistor. Collector Characteristic CSKMS AL PHYSICS E 2004 by Leo Chung P.11

12 4. The Input / Output Voltage Characteristic R L R B Input/Output Voltage Characteristic Notes: R L is called the load resistor. As I C varies, the p.d. across R L varies & so the output voltage V out varies. Hence R L converts current variations to voltage variations. Before the base current starts to flow we say that the transistor is in cut-off region. When the V in exceeds about 0.5 V, base current flows & a collector current I C = βi B flows through the load resistor. There will then be a p.d. across the load resistor so that V out falls from 6 V. This region is called linear region. When the V in exceeds about 1.1 V, further increase of V in has very little effect on V out which remains approximately constant at about 0.1 V. This transistor is then said to be saturated or bottomed. Or in the region of saturation. Details of the characteristics: The input voltage V in is always applied to the transistor via R B (note that V in is not the same as V BE ). In fact V in = V BE + I B R B The output voltage V out is the p.d. across C and E, i.e. V out = V CE is related to I C and R L according to = Experiment Note: Both V in and V out can be measured by moving coil voltmeter. According to the above figure (a), the transistor falls into one of three stages, depending on V in. CSKMS AL PHYSICS E 2004 by Leo Chung P.12

13 (I) Cut-off state If V in is less than 0.7 V, the base current I b = 0 and the collector current I c = 0. As a result, the p.d. across R L is zero and the output voltage V out = 6 V. The transistor is in the cut-off state. (II) Linear region When V in increased from 0.7 V, the base current is given by = + = = β = = β = β Suppose R B = 15 KΩ, R L = 2.2 kω and b = 100. = (5) Or = + = β Clearly, V out varies linearly with V in. As Vin increases, I b increases and V out decreases. (III)Saturation state From equation (1) = As I c increases, V out decreases. When the minimum value of V out = 0.2 V is reached (Fig D2), increasing V in further would not affect the output. The transistor saturates. The minimum input voltage that causes saturation is given by = = 0.2V V in =1.1 V Thus for V in > 1.1 V, the transistor saturates. Taking into account the voltage C and E during saturation, V out = 0.2 V, the p.d. across the load resistor R L is V L = = 5.8 V and the largest collector current is The minimum base current for saturation to occur is = = = = = = µ β CSKMS AL PHYSICS E 2004 by Leo Chung P.13

14 The application of transistor If the input voltage V in changes abruptly and largely (e.g. between 0 and 5 V), the transistor switches between cut-off state (V out = 6V) and saturation state (V out = 0.2 V or 0 V). So the transistor can be used as switch or a gate in binary circuits. If V in varies within the linearly region, V out varies linearly with V in. With suitable base resistor R B and Load resistor R L, the transistor can be used to amplify a.c. (a) Linear Voltage Amplification A linear voltage amplifier The Figure above shows the circuit for amplifying an a.c. voltage DV in using a transistor. Before the a.c. is applied, the transistor is adjusted by R1 to lie in the middle of the linear region. (Such input is called optimal biasing voltage, i.e. 0.9 V in the above graphs) Thus, V out = 3.0 V. Consider the base circuit, = + = Where V BE is constant (about 0.7 V) when the transistor is conducting. Consider the collector circuit, From (1) and (2), we have = = β (2) = β (3) When a.c. of peak voltage DV in is applied through C 1, the input voltage becomes (V in + DV in ) this causes the p.d. across C and E fluctuate about V out (V out = 3.0 V). CSKMS AL PHYSICS E 2004 by Leo Chung P.14

15 The a.c. output DV out is obtained via C 2. From equation (3), Let G=DV out /DV in is called voltage gain. + = β +..(4) The output signal is 180 o out of phase with input signal. = = β a.c. component Suppose a transistor of current gain = 100 has a load resistor R L = 2.2 kand a base resistor R B = 15 k The voltage gain is 2.2 G = 100 = Thus, the amplitude of output signal is 15 times that of the input signal. To avoid distortion, the output signal s amplitude must be within 3.0 V. Thus, the peak voltage of the input a.c. must be within 3/15=0.2 V (i.e. the maximum peak input voltage is V inmax = 0.2 V d.c. component (biasing) In the absence of the a.c. input, the base current I b should flow to keep V in at the mid-way in the linear region. I b is called the biasing current. In our example, for V out = 3.0 V, I c is given by 3 3 I c = = = 1. ma R 36 L 2200 Thus, the biasing current is I b = I c /b = 13.6 ma/100 = 13.6 ma Power gain An amplifier not only provides voltage gain, but also power gain. The extra energy comes from the power supply connected to the amplifier. A transformer is not an amplifier. Although it can increase an a.c. voltage, it required a considerable current flow in the primary. Experimental Notes: (i) C 1 at the input is called blocking capacitor. It is to prevent the steady biasing current I b flowing into the a.c. source, thereby upsetting the bias condition. (ii) C 2 at the output is to block the steady p.d. (3.0 V in our example) which is necessary for biasing the transistor. This ensures that the output voltage us pure a.c.. CSKMS AL PHYSICS E 2004 by Leo Chung P.15

16 Amplifying an input a.c. by a linear voltage amplifier Transistor as Switches (1) Use with a light sensing device In the above figure, the light dependent resistor (LDR) has a high resistance (~600 kilo-ohm) in darkness and a low resistance (~9 kilo-ohm) in sunlight. Suppose the variable resistor is set at about 200 kilo-ohm. When the LDR is illuminated with sunlight, the p.d. across the LDR is about = + CSKMS AL PHYSICS E 2004 by Leo Chung P.16

17 This is approximately the input voltage V in for the transistor. Since V in < 0.5V, the transistor is in cut-off state. There is no current though the collector terminal. The magnetic relay switch remains open. The bulb in the secondary circuit does not light up. As the LDR placed in darkness, the resistance rises to 600 kilo-ohm and its p.d. is now = + Since V in is greater than 0.7 V, a base current flows through R B. As a result a large collector current flows downward through the coil of the relay. The secondary circuit is switched on and the bulb lights up. If the bulb is switch on room light, rather than in total darkness, R should be adjusted to a smaller value. The diode in the circuit serves to protect the transistor. Large backward current would induced when the coil suddenly break. (2) Squarer Connect an a.c. low tension power supple to a basic transistor unit as shown below: Set the LT at 1 V r.m.s. (1.4peak). Observe the input signal V in and output signal V out on a double-beam CRO. The sinusoidal input has changed to a square output. The circuit of the above circuit acts a squarer. The action of a squarer can be understood from the input/output voltage characteristic. When the input voltage exceeds +1 V, the transistor is saturated and the output voltage is nearly zero (in fact about 0.2 V); when the input voltage is less than 0.5 V (including the case when Vin is negative) the transistor is cut off and the output is +6 V. In between V in = +0.5 V and V in = +1 V, V out changes linearly with V in. Note that this is a relatively small part of the V in - t graph, which can therefore be approximated as a straight line. Consequently V out is also approximately linear in the time t. Also note that V out stays longer at maximum voltage than at minimum voltage; the output waveform is not CSKMS AL PHYSICS E 2004 by Leo Chung P.17

18 symmetrical. Now increase the r.m.s. voltage of the LT gradually. We see that the output signal always changes between +6 V to ~0 V. However, the waveform becomes more and more symmetrical. VI. Operational Amplifier The operational amplifier or the op-amp does for the analogue world, like what the NAND gate foes for the digital world. It can do mathematical operations and is used as a high-gain amplifier or as a switch. A. Properties 1. A d.c. amplifier, can simplify both steady d.c. voltages and varying a.c. voltages. 2. Large voltage gain, or open-loop gain (i.e. no feedback) 10 5 in general expressed in db, e.g. a gain of 10 5 = 20 log = 100 db. 3. High input impedance, 2 megaohm to ohm. And so draws very small current from the input like a high resistance voltmeter. CSKMS AL PHYSICS E 2004 by Leo Chung P.18

19 4. Low output impedance, 75 ohm 100 ohm, so output voltage would be completely consumed by a large load. 5. High slew rate, the rate at which the output voltage can change when the input voltage is changed, at about 10 6 to 10 7 V/s. B. Uses of Op-amp 1. Voltage amplification with or without inverting the signal; 2. Finding the sum of two or more signals; 3. Finding the difference between two signals; 4. As an integrating system; 5. As a comparator: switches when a signal reaches a pre-determined level; 6. As a pulse generator; 7. As s generator of alternating voltages (a signal generator). C. Configurations 1. Common op-amp comes in d.i.l. (dual in line) IC with 8 pins in type nos. of 741 & TL Needs balanced power supplies of (-5 V, 0, +5 V) up to (-15 V, 0, +15 V) in pin 4 and 7 respectively. A dual supply is necessary since the output voltage must be able to swing both + and with respect to earth. 3. A positive input would be changed to negative output if it is fed into the inverting input or the (supply ) input in pin For the non-inverting input or the (supply + ) input in pin 3, the phase of the input signal would not be changed. 5. An op-amp amplifies the voltage difference between the inputs & not the voltage between an input and the power supply zero. Hence it is also named differential amplifier. Output at pin 6 is measured relative to the power supply zero. 6. A 741 can take any value between + 15 V and 15 V. The output of a 741 can only get to within 2 V of the supply rails. So the maximum and minimum outputs are + 13 V and 13 V with the usual supply rails. CSKMS AL PHYSICS E 2004 by Leo Chung P.19

20 D. Transfer Characteristics of an Op-amp Various voltages are fed in through the inverting and non-inverting inputs and the corresponding output voltage measured. The following graph shows the variation of the output versus the difference in the input voltages. 1. The variation is linear only within a small range of input voltages. 2. Outside this range of input, the output would be close to the supply voltage and is said to be saturated. = A V, where A 0 is the 3. The output is given by ( ) open-loop voltage gain. V out 0 2 V1 CSKMS AL PHYSICS E 2004 by Leo Chung P.20

21 E. Feedback The process whereby all or part of the output generated by a system is fed back to the input of that system. For positive feedback, it results in continued or even greater output. For negative feedback, it will tend to cancel or reduce the effect which produced it. In general, there are 3 distinct ways in which an op-amp may be used. They may be used in open-loop mode (i.e. without any feedback), with positive feedback and with negative feedback. The last method is the most common way in the use of an op-amp. F. Open-Loop Mode When an op-amp is used as a processing unit on its own, it acts as a comparator. ii. It looks at the signals coming into its two inputs. iii. It decides which one has the higher voltage. iv. It pushes the output to one of the supply rails. e.g. if non-inverting input > inverting input, the output is + 14 V or + 15 V. if inverting input > non-inverting input, the output is 14 V or 15 V. CSKMS AL PHYSICS E 2004 by Leo Chung P.21

22 Consider the following two circuits in which the op-amp is used as a switch. For the left circuit, if the thermistor is cold, (i.e. Y is low) and X> Y, the op-amp is in non-inverting mode, V out becomes + and the green LED is lights. If the thermistor is hot, Y will increase until Y > X, the op-amp is in inverting mode and V out becomes which makes the red LED lights. The temperature at which the LEDs swap over is controlled by the potentiometer. The op-amp acts as a switch and the system is a hot/cold detector. For the right circuit, the Led only lights if V in lies in the range + 5V to + 10V. When V in lies outside this range, the outputs of the two op-amps have the same + or values of the supply rails. The LED can only come on when the outputs are different. G. Negative Feedback the inverting amplifier *** Saturation V out V in As can be seen in the above circuit, a fraction of V out is fed back to the inverting input through R f (f = feedback). This lowers the input and the output as they are in anti-phase. The gain with negative feedback is called closed-loop gain would be less than the open-loop gain. Saturation CSKMS AL PHYSICS E 2004 by Leo Chung P.22

23 i. Gain is predictable, independent of the characteristics of op-amp. ii. iii. iv. Greater stability. Less output distortion, or more linear amplification. Increase in the bandwidth of frequency response. i. Negligible current drawn in each input due to large input resistance. ii. The inverting input is close to zero or earth potential (called virtual earth). As the gain of the op-amp is so large that p.d. between the two inputs is small (non-inverting input is earthed). Let V l be + ve and so V o is ve, Using Ohm s law, i 0 V = I ( ) O 2R ( ii) Vl 0 = I 1Rl f Hence, the closed-loop gain is given by, V R O f A0 = = ( Q I 2 I 1 ) V R l l i. Hence the closed-loop gain depends only on the value of the resistors. ii. When R f = Rin, the closed-loop gain = - 1, i.e. the circuit acts as an inverter (the NOT iii. gate). If the input is an a.c. source, the gain of the amplifier decreases as the frequency of the input signal decreases. The use of negative feedback increases the range of frequencies over which the gain is constant, i.e. the bandwidth is increased. CSKMS AL PHYSICS E 2004 by Leo Chung P.23

24 H. Others Applications of Op-amp The summing amplifier uses an op-amp to add 2 or more voltages and produces an output that is proportional to their sum. As negligible current flows into the inverting input, thus current in R f equals the sum of the currents in R 1, R 2 and R 3. The non-inverting input is at zero potential. Therefore, V1 V2 V + + R R R 1 when V = R out f R 1 = R2 = R3 = R f, V out = ( V + V + V ) The input V in is supplied to the non-inverting (+) terminal of the op-amp. By the same assumptions in inverting amplifier, we have, V V in out = I f = I R f in thus the gain ( R + R ) f in V ( R + R ) out f in A 0 = = = 1+ Vin Rin R R f in V + R f 10 k V in R in V out V - CSKMS AL PHYSICS E 2004 by Leo Chung P.24

25 If the output is directly all fed to the inverting (-) terminal, then R f = 0, and so the gain is 1. Thus V out is very close to V in. The circuit is called a voltage follower. It has very high input impedance and a low output impedance (due to the op-amp). It is used as the input stage of an analogue voltmeter for giving a high input impedance. M.C.Questions << Diode & power supplies >> I 48 Which of the following statements about a thermionic diode is/are correct? (1) A thermionic diode can be used to convert a.c. into d.c. (2) Increasing the filament current will increase the saturation current. (3) The current flow to the anode increases with the anode voltage within a certain range. A. (1), (2) and (3) B. (1) and (2) only C. (2) and (3) only D. (1) only E. (3) only I 29 For the circuit shown above, which of the graphs shown below best represents the variation of current I with time t? CSKMS AL PHYSICS E 2004 by Leo Chung P.25

26 I 30 The above figure shows a half-wave rectifier with a smoothing circuit. The time constant of C and R should be A. small compared with the time of one cycle. B. equal to half the time of one cycle. C. equal to the time of one cycle. D. equal to twice the time of one cycle. E. large compared with the time of one cycle I 42 Which of the following circuits can give a half-wave rectification waveform on a C.R.O.? CSKMS AL PHYSICS E 2004 by Leo Chung P.26

27 I 42 In the above a.c. smoothing circuit, the ripple on the current passing through the load R can be reduced by increasing (1) the load resistance R (2) the capacitance C (3) the a.c. supply frequency A. (1), (2) and (3) B. (1) and (2) only C. (2) and (3) only D. (1) only E. (3) only CSKMS AL PHYSICS E 2004 by Leo Chung P.27

28 I 37 Which of the following graphs best represents the variation with time t of the current I through the segment AB in the above circuit? IIA 29(AL)/1995 IIA 15(AS) A 'black box' containing two unknown components is connected to a cell, a resistor and an ammeter as shown. A current flows steadily no matter which way the box's terminals are connected to he cell and the same ammeter reading is obtained. The two components in the 'black box' could be A. two diodes in series. B. two diodes in parallel. C. two capacitors in parallel. D. a diode and resistor in parallel. E. a diode and a capacitor in parallel. CSKMS AL PHYSICS E 2004 by Leo Chung P.28

29 IIA 35(AL) When a CRO is connected to a circuit, the trace obtained is shown above. Which of the following circuits has the CRO been connected? << NPN silicon bipolar junction transistor >> (AL only) I 30 The diagram shows a transistor circuit with two similar light bulbs L1 and L2. The bulb L2 lights up brightly, but L1 does not glow at all. Which of the following could be a possible reason for this? A. The filament of L1 is burnt out. B. The cell E1 should be connected the other way round. C. The cell E2 should be connected the other way round. D. The collector current is very much less than the emitter current. E. The base current is very much less than the emitter current. CSKMS AL PHYSICS E 2004 by Leo Chung P.29

30 I 32 In the transistor circuit shown above, the voltage VAE, VPE, VCE and VBE were measured and tabulated as follows : VAE VPE VCE VBE 3.6 V 2.6 V 2.5 V 0.6 V What are the values for the base current IB and the collector current IC? I B / ma I C / ma A B C D E I 25 A transistor is used for current amplification in the common emitter configuration. The measured currents through the emitter, collector and base of the transistor are ie, ic and ib respectively. What are the possible values of ic/ie and ie/ib as obtained from the measurement of the various currents? i c / i i / i A B. 1 1 C D E I 43 e e b CSKMS AL PHYSICS E 2004 by Leo Chung P.30

31 In the above circuit, the sliding contact S is moved between X and Y to give different voltages across ce. Which of the following graphs best represents the variation of the collector current Ic with the voltage Vce across the emitter and the collector? I 44 In the above circuit, the reading of the voltmeter is zero. What should be the voltage applied at Input 1 and Input 2 respectively? Input 1 Input 2 A. 0 V 0 V B. 0 V 6 V C. 3 V 3 V D. 6 V 0 V E. 6 V 6 V CSKMS AL PHYSICS E 2004 by Leo Chung P.31

32 I 43 A NPN transistor is operated as a linear voltage amplifier and the output voltage is displayed on a CRO screen as shown : What changes will occur when RL is slightly increased? Vdc Vpp A. decreases increases B. decreases decreases C. increases increases D. increases decreases E. no change increases I 45 In the above circuit, if the current amplification factor b = 130, what is the output voltage Vout? A. 0 V B. 3.0 V C. 4.1 V D. 4.9 V E. 6 V I 40 A CRO is used to display the current transfer characteristic curve of a transistor. How should points P, Q and R be connected to the X-input, Y-input and the earth terminal of the CRO? CSKMS AL PHYSICS E 2004 by Leo Chung P.32

33 X-input Y-input Earth A. P Q R B. P R Q C. Q P R D. Q R P E. R P Q I 39 The circuit above shows an NPN transistor and two resistor 10 kw and 1 kw connected to a 5 V d.c. supply. The current gain of the transistor is 100. What is the value of the collector current? A. 5 µa B. 500 µa C. 5 ma D. 50 ma E. 500 ma I 43 An n-p-n transistor is used in the above circuit as a pulse shaper or a squarer. When a sinusoidal voltage whose magnitude varies between +2 V and -2 V is applied to the input, what will be the output voltage? CSKMS AL PHYSICS E 2004 by Leo Chung P.33

34 I 30 The graphs show the characteristics for a transistor operating in the common emitter mode. I C is the collector current, I B is the base current and V CE is the potential difference between the collector and emitter. The current gain for this transistor is A. 20 B. 50 C. 80 D. 100 E I 31 The graph show s the transfer characteristic of an electronic device. The input is a sinusoidal voltage with a peak value of 11.5 V and a mean value of zero. Which one of the following waveforms best represents the variation of the output voltage with time? A. B. C. D. E. CSKMS AL PHYSICS E 2004 by Leo Chung P.34

35 I-40 The above diagrams show an NPN transistor consist and its input/output voltage characteristic. What is the current amplification factor of the transistor? A. 10 B. 30 C. 60 D. 75 E IIA-31(AL) In the above transistor circuit, the voltage across the base and the emitter is 0.5 V when the transistor works. The current amplification factor of the transistor is 80. What input voltage (V in ) would give an output voltage (V out ) of 4 V? A V B V C V D V E V << Operational amplifier >> (AL only) I 32 In the circuit above, what is the voltage amplification? A with inversion B with inversion C. 50 with inversion D. 50 without inversion E without inversion CSKMS AL PHYSICS E 2004 by Leo Chung P.35

36 I-41 Two electrical signals V 1 and V 2 are fed into an operational amplifier. The variations of V 1 and V 2 with time are shown above. Which of the following graphs represents the variation of the output V out with time? A. B. C. D. E I-35(AL) Which of the following statements about an operational amplifier is/are correct? (1) It amplifies the difference between the voltages at its two inputs. (2) For d.c., the open loop voltage gain is of the order (3) For a.c., the open loop voltage gain decreases with increasing frequency. A. (1) only B. (3) only C. (1) and (2) only D. (2) and (3) only E. (1),(2) and (3) CSKMS AL PHYSICS E 2004 by Leo Chung P.36

37 IIA-36(AL) The above figure shows an operational amplifier circuit which uses a ±15 V supply (not shown). If the input potential is V, what is the potential at point X? A. -5 V B. -15 V C V D. +5 V E. +15 V IIA-43(AL) An operational amplifier is connected as shown below with input voltage V i = +2 V. What is the output voltage V o? A. -6 V B. -4 V C. +4 V D. +6 V E. +12 V IIA-32(AL) An input voltage(v in ) of 2.0 V is applied to an ideal operational amplifier connected as shown. The current flowing through the 8 kω resistor is A ma from X to Y B ma from X to Y C ma from Y to X D. 1.0 ma from X to Y E. 1.0 ma from Y to X CSKMS AL PHYSICS E 2004 by Leo Chung P.37

38 IIA-32(AL) A circuit is required for doubling the amplitude of a sinusoidal alternating voltage. Which of the following circuits might be suitable? (1) (2) (3) A. (1) only B. (3) only C. (1) and (2) only D. (2) and (3) only E. (1), (2) and (3) IIA-42(AL) In the above operational amplifier circuit, the output voltage V out is A. 5 V B. 2.5 V C. 0 V D V E. +5 V CSKMS AL PHYSICS E 2004 by Leo Chung P.38

39 Structured Type Questions I-9(AL) Figure 9.1 Shows a common-emitter transistor circuit and also its input/output voltage characterisics. (a) (i) Find the voltage V c. (ii) What is the voltage between the base and the emitter when V i = 1.5 V. (iii) Find the voltage gain and the current amplification factor of this transistor circuit. (b) In order to amplify the rectified a.c. signal shown in Figure 9.2 two resistors and two capacitors are added to the circuit as shown in Figure 9.3. Figure 9.2 Figure 9.3 (i) (ii) State the function of the capacitors in the circuit What is the maximum value of V p such that the signal can be amplified without chopping off the peaks? (iii) Draw the corresponding output signal in the space provided if V P = 0.2 V CSKMS AL PHYSICS E 2004 by Leo Chung P.39

40 IA-4(AL) (a) Figure 4.1 shows an operational amplifier circuit. Figure 4.1 A graph of output voltage V out plotted against input voltage V in is shown below. (i) What is the resistance of the resistor R f? (ii) With reference to the graph, explain the function of the above circuit. (b) Figure 4.2 Figure 4.2 shows the circuit of a comparator. The LED lights up when the input voltage V in is less than 4.5 V. Find the resistance of R. (c) A stable power supply is essential for the operation of computer parts, which usually work at 5 V d.c. A fluctuation in the supply voltage V in of more than 10% is certainly not tolerable, so it is therefore important to keep a regular check on it. Figure 4.3 shows a warning device designed for such a purpose. (i) State the potential at P and at Q. Briefly explain the operation of the circuit. (ii) Calculate the resistance of the resistors R 1 and R 2. CSKMS AL PHYSICS E 2004 by Leo Chung P.40

Module 04.(B1) Electronic Fundamentals

Module 04.(B1) Electronic Fundamentals 1.1a. Semiconductors - Diodes. Module 04.(B1) Electronic Fundamentals Question Number. 1. What gives the colour of an LED?. Option A. The active element. Option B. The plastic it is encased in. Option

More information

Emitter base bias. Collector base bias Active Forward Reverse Saturation forward Forward Cut off Reverse Reverse Inverse Reverse Forward

Emitter base bias. Collector base bias Active Forward Reverse Saturation forward Forward Cut off Reverse Reverse Inverse Reverse Forward SEMICONDUCTOR PHYSICS-2 [Transistor, constructional characteristics, biasing of transistors, transistor configuration, transistor as an amplifier, transistor as a switch, transistor as an oscillator] Transistor

More information

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) Summer 2016 EXAMINATIONS.

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) Summer 2016 EXAMINATIONS. Summer 2016 EXAMINATIONS Subject Code: 17321 Model Answer Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the answer scheme. 2) The

More information

Shankersinh Vaghela Bapu Institute of Technology INDEX

Shankersinh Vaghela Bapu Institute of Technology INDEX Shankersinh Vaghela Bapu Institute of Technology Diploma EE Semester III 3330905: ELECTRONIC COMPONENTS AND CIRCUITS INDEX Sr. No. Title Page Date Sign Grade 1 Obtain I-V characteristic of Diode. 2 To

More information

Objective: To study and verify the functionality of a) PN junction diode in forward bias. Sl.No. Name Quantity Name Quantity 1 Diode

Objective: To study and verify the functionality of a) PN junction diode in forward bias. Sl.No. Name Quantity Name Quantity 1 Diode Experiment No: 1 Diode Characteristics Objective: To study and verify the functionality of a) PN junction diode in forward bias Components/ Equipments Required: b) Point-Contact diode in reverse bias Components

More information

(a) BJT-OPERATING MODES & CONFIGURATIONS

(a) BJT-OPERATING MODES & CONFIGURATIONS (a) BJT-OPERATING MODES & CONFIGURATIONS 1. The leakage current I CBO flows in (a) The emitter, base and collector leads (b) The emitter and base leads. (c) The emitter and collector leads. (d) The base

More information

Objective Type Questions 1. Why pure semiconductors are insulators at 0 o K? 2. What is effect of temperature on barrier voltage? 3.

Objective Type Questions 1. Why pure semiconductors are insulators at 0 o K? 2. What is effect of temperature on barrier voltage? 3. Objective Type Questions 1. Why pure semiconductors are insulators at 0 o K? 2. What is effect of temperature on barrier voltage? 3. What is difference between electron and hole? 4. Why electrons have

More information

Document Name: Electronic Circuits Lab. Facebook: Twitter:

Document Name: Electronic Circuits Lab.  Facebook:  Twitter: Document Name: Electronic Circuits Lab www.vidyathiplus.in Facebook: www.facebook.com/vidyarthiplus Twitter: www.twitter.com/vidyarthiplus Copyright 2011-2015 Vidyarthiplus.in (VP Group) Page 1 CIRCUIT

More information

GATE SOLVED PAPER - IN

GATE SOLVED PAPER - IN YEAR 202 ONE MARK Q. The i-v characteristics of the diode in the circuit given below are : v -. A v 0.7 V i 500 07 $ = * 0 A, v < 0.7 V The current in the circuit is (A) 0 ma (C) 6.67 ma (B) 9.3 ma (D)

More information

Federal Urdu University of Arts, Science & Technology Islamabad Pakistan SECOND SEMESTER ELECTRONICS - I

Federal Urdu University of Arts, Science & Technology Islamabad Pakistan SECOND SEMESTER ELECTRONICS - I SECOND SEMESTER ELECTRONICS - I BASIC ELECTRICAL & ELECTRONICS LAB DEPARTMENT OF ELECTRICAL ENGINEERING Prepared By: Checked By: Approved By: Engr. Yousaf Hameed Engr. M.Nasim Khan Dr.Noman Jafri Lecturer

More information

3 Circuit Theory. 3.2 Balanced Gain Stage (BGS) Input to the amplifier is balanced. The shield is isolated

3 Circuit Theory. 3.2 Balanced Gain Stage (BGS) Input to the amplifier is balanced. The shield is isolated Rev. D CE Series Power Amplifier Service Manual 3 Circuit Theory 3.0 Overview This section of the manual explains the general operation of the CE power amplifier. Topics covered include Front End Operation,

More information

Section:A Very short answer question

Section:A Very short answer question Section:A Very short answer question 1.What is the order of energy gap in a conductor, semi conductor, and insulator?. Conductor - no energy gap Semi Conductor - It is of the order of 1 ev. Insulator -

More information

WINTER 14 EXAMINATION. Model Answer. 1) The answers should be examined by key words and not as word-to-word as given in the

WINTER 14 EXAMINATION. Model Answer. 1) The answers should be examined by key words and not as word-to-word as given in the WINTER 14 EXAMINATION Subject Code: 17213 Model Answer Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2)

More information

Dev Bhoomi Institute Of Technology Department of Electronics and Communication Engineering PRACTICAL INSTRUCTION SHEET

Dev Bhoomi Institute Of Technology Department of Electronics and Communication Engineering PRACTICAL INSTRUCTION SHEET Dev Bhoomi Institute Of Technology Department of Electronics and Communication Engineering PRACTICAL INSTRUCTION SHEET LABORATORY MANUAL EXPERIMENT NO. ISSUE NO. : ISSUE DATE: REV. NO. : REV. DATE : PAGE:

More information

3. Diode, Rectifiers, and Power Supplies

3. Diode, Rectifiers, and Power Supplies 3. Diode, Rectifiers, and Power Supplies Semiconductor diodes are active devices which are extremely important for various electrical and electronic circuits. Diodes are active non-linear circuit elements

More information

Maltase cross tube. D. Senthilkumar P a g e 1

Maltase cross tube.  D. Senthilkumar P a g e 1 Thermionic Emission Maltase cross tube Definition: The emission of electrons when a metal is heated to a high temperature Explanation: In metals, there exist free electrons which are able to move around

More information

7. Bipolar Junction Transistor

7. Bipolar Junction Transistor 41 7. Bipolar Junction Transistor 7.1. Objectives - To experimentally examine the principles of operation of bipolar junction transistor (BJT); - To measure basic characteristics of n-p-n silicon transistor

More information

Difference between BJTs and FETs. Junction Field Effect Transistors (JFET)

Difference between BJTs and FETs. Junction Field Effect Transistors (JFET) Difference between BJTs and FETs Transistors can be categorized according to their structure, and two of the more commonly known transistor structures, are the BJT and FET. The comparison between BJTs

More information

Analog Electronic Circuits

Analog Electronic Circuits Analog Electronic Circuits Chapter 1: Semiconductor Diodes Objectives: To become familiar with the working principles of semiconductor diode To become familiar with the design and analysis of diode circuits

More information

Table of Contents. iii

Table of Contents. iii Table of Contents Subject Page Experiment 1: Diode Characteristics... 1 Experiment 2: Rectifier Circuits... 7 Experiment 3: Clipping and Clamping Circuits 17 Experiment 4: The Zener Diode 25 Experiment

More information

SUMMER 13 EXAMINATION Subject Code: Model Answer Page No: / N

SUMMER 13 EXAMINATION Subject Code: Model Answer Page No: / N Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2) The model answer and the answer written by candidate

More information

Basic Electronics Learning by doing Prof. T.S. Natarajan Department of Physics Indian Institute of Technology, Madras

Basic Electronics Learning by doing Prof. T.S. Natarajan Department of Physics Indian Institute of Technology, Madras Basic Electronics Learning by doing Prof. T.S. Natarajan Department of Physics Indian Institute of Technology, Madras Lecture 38 Unit junction Transistor (UJT) (Characteristics, UJT Relaxation oscillator,

More information

Basic Electronics SYLLABUS BASIC ELECTRONICS. Subject Code : 15ELN15/25 IA Marks : 20. Hrs/Week : 04 Exam Hrs. : 03. Total Hrs. : 50 Exam Marks : 80

Basic Electronics SYLLABUS BASIC ELECTRONICS. Subject Code : 15ELN15/25 IA Marks : 20. Hrs/Week : 04 Exam Hrs. : 03. Total Hrs. : 50 Exam Marks : 80 SYLLABUS BASIC ELECTRONICS Subject Code : /25 IA Marks : 20 Hrs/Week : 04 Exam Hrs. : 03 Total Hrs. : 50 Exam Marks : 80 Course objectives: The course objective is to make students of all the branches

More information

CRO AIM:- To study the use of Cathode Ray Oscilloscope (CRO).

CRO AIM:- To study the use of Cathode Ray Oscilloscope (CRO). 1. 1 To study CRO. CRO AIM:- To study the use of Cathode Ray Oscilloscope (CRO). Apparatus: - C.R.O, Connecting probe (BNC cable). Theory:An CRO is easily the most useful instrument available for testing

More information

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) MODEL ANSWER

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) MODEL ANSWER Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2) The model answer and the answer written by candidate

More information

Practical Manual. Deptt.of Electronics &Communication Engg. (ECE)

Practical Manual. Deptt.of Electronics &Communication Engg. (ECE) Practical Manual LAB: BASICS OF ELECTRONICS 1 ST SEM.(CSE/CV) Deptt.of Electronics &Communication Engg. (ECE) RAO PAHALD SINGH GROUP OF INSTITUTIONS BALANA(MOHINDER GARH)12302 Prepared By. Mr.SANDEEP KUMAR

More information

Operational Amplifiers

Operational Amplifiers Operational Amplifiers Table of contents 1. Design 1.1. The Differential Amplifier 1.2. Level Shifter 1.3. Power Amplifier 2. Characteristics 3. The Opamp without NFB 4. Linear Amplifiers 4.1. The Non-Inverting

More information

Shankersinh Vaghela Bapu Institute of Technology

Shankersinh Vaghela Bapu Institute of Technology Shankersinh Vaghela Bapu Institute of Technology B.E. Semester III (EC) 131101: Basic Electronics INDEX Sr. No. Title Page Date Sign Grade 1 [A] To Study the V-I characteristic of PN junction diode. [B]

More information

the reactance of the capacitor, 1/2πfC, is equal to the resistance at a frequency of 4 to 5 khz.

the reactance of the capacitor, 1/2πfC, is equal to the resistance at a frequency of 4 to 5 khz. EXPERIMENT 12 INTRODUCTION TO PSPICE AND AC VOLTAGE DIVIDERS OBJECTIVE To gain familiarity with PSPICE, and to review in greater detail the ac voltage dividers studied in Experiment 14. PROCEDURE 1) Connect

More information

Small signal Amplifier stages. Figure 5.2 Classification of power amplifiers

Small signal Amplifier stages. Figure 5.2 Classification of power amplifiers 5.1 Introduction When the power requirement to drive the load is in terms of several Watts rather than mili-watts the power amplifiers are used. Power amplifiers form the last stage of multistage amplifiers.

More information

Basic Electronics Prof. T.S. Natarajan Department of Physics Indian Institute of Technology, Madras

Basic Electronics Prof. T.S. Natarajan Department of Physics Indian Institute of Technology, Madras Basic Electronics Prof. T.S. Natarajan Department of Physics Indian Institute of Technology, Madras Lecture 39 Silicon Controlled Rectifier (SCR) (Construction, characteristics (Dc & Ac), Applications,

More information

Lesson Plan. Week Theory Practical Lecture Day. Topic (including assignment / test) Day. Thevenin s theorem, Norton s theorem

Lesson Plan. Week Theory Practical Lecture Day. Topic (including assignment / test) Day. Thevenin s theorem, Norton s theorem Name of the faculty: GYANENDRA KUMAR YADAV Discipline: APPLIED SCIENCE(C.S.E,E.E.ECE) Year : 1st Subject: FEEE Lesson Plan Lesson Plan Duration: 31 weeks (from July, 2018 to April, 2019) Week Theory Practical

More information

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified)

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) WINTER 16 EXAMINATION Model Answer Subject Code: 17213 Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2)

More information

Lecture 3: Transistors

Lecture 3: Transistors Lecture 3: Transistors Now that we know about diodes, let s put two of them together, as follows: collector base emitter n p n moderately doped lightly doped, and very thin heavily doped At first glance,

More information

4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) 4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) The Metal Oxide Semitonductor Field Effect Transistor (MOSFET) has two modes of operation, the depletion mode, and the enhancement mode.

More information

Technological Studies. - Applied Electronics (H) TECHNOLOGICAL STUDIES HIGHER APPLIED ELECTRONICS. Transistors. Craigmount High School 1

Technological Studies. - Applied Electronics (H) TECHNOLOGICAL STUDIES HIGHER APPLIED ELECTRONICS. Transistors. Craigmount High School 1 TECHNOLOGICAL STUDIES HIGHER APPLIED ELECTRONICS Transistors Craigmount High School 1 APPLIED ELECTRONICS Outcome 1 - Design and construct electronic systems to meet given specifications When you have

More information

Analytical Chemistry II

Analytical Chemistry II Analytical Chemistry II L3: Signal processing (selected slides) Semiconductor devices Apart from resistors and capacitors, electronic circuits often contain nonlinear devices: transistors and diodes. The

More information

Applications of diodes

Applications of diodes Applications of diodes Learners should be able to: (a) describe the I V characteristics of a silicon diode (b) describe the use of diodes for component protection in DC circuits and half-wave rectification

More information

GCSE Electronics. Scheme of Work

GCSE Electronics. Scheme of Work GCSE Electronics Scheme of Work Week Topic Detail Notes 1 Practical skills assemble a circuit using a diagram recognize a component from its physical appearance (This is a confidence building/motivating

More information

Energy band diagrams Metals: 9. ELECTRONIC DEVICES GIST ρ= 10-2 to 10-8 Ω m Insulators: ρ> 10 8 Ω m Semiconductors ρ= 1 to 10 5 Ω m 109 A. Intrinsic semiconductors At T=0k it acts as insulator At room

More information

The Common Emitter Amplifier Circuit

The Common Emitter Amplifier Circuit The Common Emitter Amplifier Circuit In the Bipolar Transistor tutorial, we saw that the most common circuit configuration for an NPN transistor is that of the Common Emitter Amplifier circuit and that

More information

ELECTRONICS AND ELECTRICITY

ELECTRONICS AND ELECTRICITY INTRODUCTION ELECTRONICS ND ELECTRICITY The science of Electronics and Electricity makes a very important contribution to our everyday existence. Electricity is concerned with the generation, transmission

More information

BJT. Bipolar Junction Transistor BJT BJT 11/6/2018. Dr. Satish Chandra, Assistant Professor, P P N College, Kanpur 1

BJT. Bipolar Junction Transistor BJT BJT 11/6/2018. Dr. Satish Chandra, Assistant Professor, P P N College, Kanpur 1 BJT Bipolar Junction Transistor Satish Chandra Assistant Professor Department of Physics P P N College, Kanpur www.satish0402.weebly.com The Bipolar Junction Transistor is a semiconductor device which

More information

RECTIFIERS AND POWER SUPPLIES

RECTIFIERS AND POWER SUPPLIES UNIT V RECTIFIERS AND POWER SUPPLIES Half-wave, full-wave and bridge rectifiers with resistive load. Analysis for Vdc and ripple voltage with C,CL, L-C and C-L-C filters. Voltage multipliers Zenerdiode

More information

Class XII - Physics Semiconductor Electronics. Chapter-wise Problems

Class XII - Physics Semiconductor Electronics. Chapter-wise Problems lass X - Physics Semiconductor Electronics Materials, Device and Simple ircuit hapter-wise Problems Multiple hoice Question :- 14.1 The conductivity of a semiconductor increases with increase in temperature

More information

ELECTRONIC DEVICES AND CIRCUITS LABORATORY MANUAL FOR II / IV B.E (EEE): I - SEMESTER

ELECTRONIC DEVICES AND CIRCUITS LABORATORY MANUAL FOR II / IV B.E (EEE): I - SEMESTER ELECTRONIC DEVICES AND CIRCUITS LABORATORY MANUAL FOR II / IV B.E (EEE): I - SEMESTER DEPT. OF ELECTRICAL AND ELECTRONICS ENGINEERING SIR C.R.REDDY COLLEGE OF ENGINEERING ELURU 534 007 ELECTRONIC DEVICES

More information

State the application of negative feedback and positive feedback (one in each case)

State the application of negative feedback and positive feedback (one in each case) (ISO/IEC - 700-005 Certified) Subject Code: 073 Model wer Page No: / N Important Instructions to examiners: ) The answers should be examined by key words and not as word-to-word as given in the model answer

More information

Diode conducts when V anode > V cathode. Positive current flow. Diodes (and transistors) are non-linear device: V IR!

Diode conducts when V anode > V cathode. Positive current flow. Diodes (and transistors) are non-linear device: V IR! Diodes: What do we use diodes for? Lecture 5: Diodes and Transistors protect circuits by limiting the voltage (clipping and clamping) turn AC into DC (voltage rectifier) voltage multipliers (e.g. double

More information

AE103 ELECTRONIC DEVICES & CIRCUITS DEC 2014

AE103 ELECTRONIC DEVICES & CIRCUITS DEC 2014 Q.2 a. State and explain the Reciprocity Theorem and Thevenins Theorem. a. Reciprocity Theorem: If we consider two loops A and B of network N and if an ideal voltage source E in loop A produces current

More information

EXPERIMENT 5 : DIODES AND RECTIFICATION

EXPERIMENT 5 : DIODES AND RECTIFICATION EXPERIMENT 5 : DIODES AND RECTIFICATION Component List Resistors, one of each o 2 1010W o 1 1k o 1 10k 4 1N4004 (Imax = 1A, PIV = 400V) Diodes Center tap transformer (35.6Vpp, 12.6 VRMS) 100 F Electrolytic

More information

Electronic Devices 1. Current flowing in each of the following circuits A and respectively are: (Circuit 1) (Circuit 2) 1) 1A, 2A 2) 2A, 1A 3) 4A, 2A 4) 2A, 4A 2. Among the following one statement is not

More information

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) Subject Code: Model Answer Page No: 1/

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) Subject Code: Model Answer Page No: 1/ MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC 27001 2005 Certified) SUMMER 13 EXAMINATION Subject Code: 12025 Model Answer Page No: 1/ Important Instructions to examiners: 1) The

More information

Chapter 9: Operational Amplifiers

Chapter 9: Operational Amplifiers Chapter 9: Operational Amplifiers The Operational Amplifier (or op-amp) is the ideal, simple amplifier. It is an integrated circuit (IC). An IC contains many discrete components (resistors, capacitors,

More information

Scheme Q.1 Attempt any SIX of following: 12-Total Marks a) Draw symbol NPN and PNP transistor. 2 M Ans: Symbol Of NPN and PNP BJT (1M each)

Scheme Q.1 Attempt any SIX of following: 12-Total Marks a) Draw symbol NPN and PNP transistor. 2 M Ans: Symbol Of NPN and PNP BJT (1M each) Q. No. WINTER 16 EXAMINATION (Subject Code: 17319) Model Answer Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer

More information

SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS. Class XII : PHYSICS WORKSHEET

SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS. Class XII : PHYSICS WORKSHEET SEMICONDUCT ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS Class XII : PHYSICS WKSHEET 1. How is a n-p-n transistor represented symbolically? (1) 2. How does conductivity of a semiconductor change

More information

Linear electronic. Lecture No. 1

Linear electronic. Lecture No. 1 1 Lecture No. 1 2 3 4 5 Lecture No. 2 6 7 8 9 10 11 Lecture No. 3 12 13 14 Lecture No. 4 Example: find Frequency response analysis for the circuit shown in figure below. Where R S =4kR B1 =8kR B2 =4k R

More information

Bipolar Junction Transistors

Bipolar Junction Transistors Bipolar Junction Transistors Invented in 1948 at Bell Telephone laboratories Bipolar junction transistor (BJT) - one of the major three terminal devices Three terminal devices more useful than two terminal

More information

PESIT BANGALORE SOUTH CAMPUS BASIC ELECTRONICS

PESIT BANGALORE SOUTH CAMPUS BASIC ELECTRONICS PESIT BANGALORE SOUTH CAMPUS QUESTION BANK BASIC ELECTRONICS Sub Code: 17ELN15 / 17ELN25 IA Marks: 20 Hrs/ Week: 04 Exam Marks: 80 Total Hours: 50 Exam Hours: 03 Name of Faculty: Mr. Udoshi Basavaraj Module

More information

PHYS 3152 Methods of Experimental Physics I E2. Diodes and Transistors 1

PHYS 3152 Methods of Experimental Physics I E2. Diodes and Transistors 1 Part I Diodes Purpose PHYS 3152 Methods of Experimental Physics I E2. In this experiment, you will investigate the current-voltage characteristic of a semiconductor diode and examine the applications of

More information

Unit/Standard Number. LEA Task # Alignment

Unit/Standard Number. LEA Task # Alignment 1 Secondary Competency Task List 100 SAFETY 101 Demonstrate an understanding of State and School safety regulations. 102 Practice safety techniques for electronics work. 103 Demonstrate an understanding

More information

Scheme Q.1 Attempt any SIX of following 12-Total Marks 1 A) Draw symbol of P-N diode, Zener diode. 2 M Ans: P-N diode

Scheme Q.1 Attempt any SIX of following 12-Total Marks 1 A) Draw symbol of P-N diode, Zener diode. 2 M Ans: P-N diode Q. No. WINTER 16 EXAMINATION (Subject Code: 17321) Model Answer Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in themodel answer scheme.

More information

THIRD SEMESTER DIPLOMA EXAMINATION IN ELECTRICAL & ELECTRONICS ENGINEERING, MARCH 2013 ELECTRONIC DEVICES AND CIRCUITS

THIRD SEMESTER DIPLOMA EXAMINATION IN ELECTRICAL & ELECTRONICS ENGINEERING, MARCH 2013 ELECTRONIC DEVICES AND CIRCUITS REVISION-2010 Reg. No SUB CODE:3053 Signature THIRD SEMESTER DIPLOMA EXAMINATION IN ELECTRICAL & ELECTRONICS ENGINEERING, MARCH 2013 ELECTRONIC DEVICES AND CIRCUITS Time :3hours Maximum marks:100 PART

More information

Electronics I Circuit Drawings. Robert R. Krchnavek Rowan University Spring, 2018

Electronics I Circuit Drawings. Robert R. Krchnavek Rowan University Spring, 2018 Electronics I Circuit Drawings Robert R. Krchnavek Rowan University Spring, 2018 Ideal Diode Piecewise Linear Models of a Diode Piecewise Linear Models of a Diode 1 r d Piecewise Linear Models of a Diode

More information

Power Amplifiers. Class A Amplifier

Power Amplifiers. Class A Amplifier Power Amplifiers The Power amplifiers amplify the power level of the signal. This amplification is done in the last stage in audio applications. The applications related to radio frequencies employ radio

More information

Physics of Bipolar Transistor

Physics of Bipolar Transistor Physics of Bipolar Transistor Motivations - In many electronic applications, amplifier is the most fundamental building block. Ex Audio amplifier: amplifies electric signal to drive a speaker RF Power

More information

Paper-1 (Circuit Analysis) UNIT-I

Paper-1 (Circuit Analysis) UNIT-I Paper-1 (Circuit Analysis) UNIT-I AC Fundamentals & Kirchhoff s Current and Voltage Laws 1. Explain how a sinusoidal signal can be generated and give the significance of each term in the equation? 2. Define

More information

Contents. Acknowledgments. About the Author

Contents. Acknowledgments. About the Author Contents Figures Tables Preface xi vii xiii Acknowledgments About the Author xv xvii Chapter 1. Basic Mathematics 1 Addition 1 Subtraction 2 Multiplication 2 Division 3 Exponents 3 Equations 5 Subscripts

More information

Sine-wave oscillator

Sine-wave oscillator Sine-wave oscillator In Fig. 1, an op-'amp can be made to oscillate by feeding a portion of the output back to the input via a frequency-selective network, and controlling the overall voltage gain. For

More information

F.Y. Diploma : Sem. II [DE/EJ/IE/IS/EE/MU/ET/EN/EX] Basic Electronics

F.Y. Diploma : Sem. II [DE/EJ/IE/IS/EE/MU/ET/EN/EX] Basic Electronics F.Y. Diploma : Sem. II [DE/EJ/IE/IS/EE/MU/ET/EN/EX] Basic Electronics Time: 3 Hrs.] Prelim Question Paper Solution [Marks : 70 Q.1 Attempt any FIE of the following : [10] Q.1(a) Draw the symbols for (i)

More information

Chapter 5 Transistor Bias Circuits

Chapter 5 Transistor Bias Circuits Chapter 5 Transistor Bias Circuits Objectives Discuss the concept of dc biasing of a transistor for linear operation Analyze voltage-divider bias, base bias, and collector-feedback bias circuits. Basic

More information

Basic Operational Amplifier Circuits

Basic Operational Amplifier Circuits Basic Operational Amplifier Circuits Comparators A comparator is a specialized nonlinear op-amp circuit that compares two input voltages and produces an output state that indicates which one is greater.

More information

LM125 Precision Dual Tracking Regulator

LM125 Precision Dual Tracking Regulator LM125 Precision Dual Tracking Regulator INTRODUCTION The LM125 is a precision, dual, tracking, monolithic voltage regulator. It provides separate positive and negative regulated outputs, thus simplifying

More information

An Introduction to Bipolar Junction Transistors. Prepared by Dr Yonas M Gebremichael, 2005

An Introduction to Bipolar Junction Transistors. Prepared by Dr Yonas M Gebremichael, 2005 An Introduction to Bipolar Junction Transistors Transistors Transistors are three port devices used in most integrated circuits such as amplifiers. Non amplifying components we have seen so far, such as

More information

Experiments in Analog Electronics

Experiments in Analog Electronics Ministry of Higher Education and Scientific Research University of Technology Department of Electrical Engineering Analog Electronics Laboratory Experiments in Analog Electronics By Firas Mohammed Ali

More information

BJT Circuits (MCQs of Moderate Complexity)

BJT Circuits (MCQs of Moderate Complexity) BJT Circuits (MCQs of Moderate Complexity) 1. The current ib through base of a silicon npn transistor is 1+0.1 cos (1000πt) ma. At 300K, the rπ in the small signal model of the transistor is i b B C r

More information

Module 2. B.Sc. I Electronics. Developed by: Mrs. Neha S. Joshi Asst. Professor Department of Electronics Willingdon College, Sangli

Module 2. B.Sc. I Electronics. Developed by: Mrs. Neha S. Joshi Asst. Professor Department of Electronics Willingdon College, Sangli Module 2 B.Sc. I Electronics Developed by: Mrs. Neha S. Joshi Asst. Professor Department of Electronics Willingdon College, Sangli BIPOLAR JUNCTION TRANSISTOR SCOPE OF THE CHAPTER- This chapter introduces

More information

Figure1: Basic BJT construction.

Figure1: Basic BJT construction. Chapter 4: Bipolar Junction Transistors (BJTs) Bipolar Junction Transistor (BJT) Structure The BJT is constructed with three doped semiconductor regions separated by two pn junctions, as in Figure 1(a).

More information

UNIT II JFET, MOSFET, SCR & UJT

UNIT II JFET, MOSFET, SCR & UJT UNIT II JFET, MOSFET, SCR & UJT JFET JFET as an Amplifier and its Output Characteristics JFET Applications MOSFET Working Principles, SCR Equivalent Circuit and V-I Characteristics. SCR as a Half wave

More information

BASIC ELECTRICITY/ APPLIED ELECTRICITY

BASIC ELECTRICITY/ APPLIED ELECTRICITY BASIC ELECTRICITY/ APPLIED ELECTRICITY PREAMBLE This examination syllabus has been evolved from the Senior Secondary School Electricity curriculum. It is designed to test candidates knowledge and understanding

More information

BASIC ELECTRICITY/ APPLIED ELECTRICITY

BASIC ELECTRICITY/ APPLIED ELECTRICITY BASIC ELECTRICITY/ APPLIED ELECTRICITY PREAMBLE This examination syllabus has been evolved from the Senior Secondary School Electricity curriculum. It is designed to test candidates knowledge and understanding

More information

EXPERIMENT 5 : THE DIODE

EXPERIMENT 5 : THE DIODE EXPERIMENT 5 : THE DIODE Component List Resistors, one of each o 1 10 10W o 1 1k o 1 10k 4 1N4004 (Imax = 1A, PIV = 400V) Diodes Center tap transformer (35.6Vpp, 12.6 VRMS) 100 F Electrolytic Capacitor

More information

This tutorial will suit all beginners who want to learn the fundamental concepts of transistors and transistor amplifier circuits.

This tutorial will suit all beginners who want to learn the fundamental concepts of transistors and transistor amplifier circuits. About the Tutorial An electronic signal contains some information which cannot be utilized if doesn t have proper strength. The process of increasing the signal strength is called as Amplification. Almost

More information

R a) Draw and explain VI characteristics of Si & Ge diode. (8M) b) Explain the operation of SCR & its characteristics (8M)

R a) Draw and explain VI characteristics of Si & Ge diode. (8M) b) Explain the operation of SCR & its characteristics (8M) SET - 1 1. a) Define i) transient capacitance ii) Diffusion capacitance (4M) b) Explain Fermi level in intrinsic and extrinsic semiconductor (4M) c) Derive the expression for ripple factor of Half wave

More information

SETH JAI PARKASH POLYTECHNIC, DAMLA

SETH JAI PARKASH POLYTECHNIC, DAMLA SETH JAI PARKASH POLYTECHNIC, DAMLA NAME OF FACULTY----------SANDEEP SHARMA DISCIPLINE---------------------- E.C.E (S.F) SEMESTER-------------------------2 ND SUBJECT----------------------------BASIC ELECTRONICS

More information

CHAPTER 1 DIODE CIRCUITS. Semiconductor act differently to DC and AC currents

CHAPTER 1 DIODE CIRCUITS. Semiconductor act differently to DC and AC currents CHAPTER 1 DIODE CIRCUITS Resistance levels Semiconductor act differently to DC and AC currents There are three types of resistances 1. DC or static resistance The application of DC voltage to a circuit

More information

PHY405F 2009 EXPERIMENT 6 SIMPLE TRANSISTOR CIRCUITS

PHY405F 2009 EXPERIMENT 6 SIMPLE TRANSISTOR CIRCUITS PHY405F 2009 EXPERIMENT 6 SIMPLE TRANSISTOR CIRCUITS Due Date (NOTE CHANGE): Thursday, Nov 12 th @ 5 pm; Late penalty in effect! Most active electronic devices are based on the transistor as the fundamental

More information

Gechstudentszone.wordpress.com

Gechstudentszone.wordpress.com 8.1 Operational Amplifier (Op-Amp) UNIT 8: Operational Amplifier An operational amplifier ("op-amp") is a DC-coupled high-gain electronic voltage amplifier with a differential input and, usually, a single-ended

More information

Diode Characteristics and Applications

Diode Characteristics and Applications Diode Characteristics and Applications Topics covered in this presentation: Diode Characteristics Diode Clamp Protecting Against Back-EMF Half-Wave Rectifier The Zener Diode 1 of 18 Diode Characteristics

More information

Pre-certification Electronics Questions. Answer the following with the MOST CORRECT answer.

Pre-certification Electronics Questions. Answer the following with the MOST CORRECT answer. Electronics Questions Answer the following with the MOST CORRECT answer. 1. The cathode end terminal of a semiconductor diode can be identified by: a. the negative sign marked on the case b. a circular

More information

Physics 281 EXPERIMENT 7 I-V Curves of Non linear Device

Physics 281 EXPERIMENT 7 I-V Curves of Non linear Device Physics 281 EXPERIMENT 7 I-V Curves of Non linear Device Print this page to start your lab report (1 copy) Bring a diskette to save your data. OBJECT: To study the method of obtaining the characteristics

More information

UNIT 3 Transistors JFET

UNIT 3 Transistors JFET UNIT 3 Transistors JFET Mosfet Definition of BJT A bipolar junction transistor is a three terminal semiconductor device consisting of two p-n junctions which is able to amplify or magnify a signal. It

More information

Electronic & Telecommunication Engineering

Electronic & Telecommunication Engineering Department of Electronic & Telecommunication Engineering LAB MANUAL ADC B.Tech 3rd Semester KCT College of Engineering & Technology Village Fatehgarh (Distt. Sangrur) INDEX List Of Experiment To construct

More information

Unit WorkBook 4 Level 4 ENG U19 Electrical and Electronic Principles LO4 Digital & Analogue Electronics 2018 Unicourse Ltd. All Rights Reserved.

Unit WorkBook 4 Level 4 ENG U19 Electrical and Electronic Principles LO4 Digital & Analogue Electronics 2018 Unicourse Ltd. All Rights Reserved. Pearson BTEC Levels 4 Higher Nationals in Engineering (RQF) Unit 19: Electrical and Electronic Principles Unit Workbook 4 in a series of 4 for this unit Learning Outcome 4 Digital & Analogue Electronics

More information

Chapter Two "Bipolar Transistor Circuits"

Chapter Two Bipolar Transistor Circuits Chapter Two "Bipolar Transistor Circuits" 1.TRANSISTOR CONSTRUCTION:- The transistor is a three-layer semiconductor device consisting of either two n- and one p-type layers of material or two p- and one

More information

UNIT IX ELECTRONIC DEVICES

UNIT IX ELECTRONIC DEVICES UNT X ELECTRONC DECES Weightage Marks : 07 Semiconductors Semiconductors diode-- characteristics in forward and reverse bias, diode as rectifier. - characteristics of LED, Photodiodes, solarcell and Zener

More information

Solid State Devices- Part- II. Module- IV

Solid State Devices- Part- II. Module- IV Solid State Devices- Part- II Module- IV MOS Capacitor Two terminal MOS device MOS = Metal- Oxide- Semiconductor MOS capacitor - the heart of the MOSFET The MOS capacitor is used to induce charge at the

More information

PREVIEW COPY. Amplifiers. Table of Contents. Introduction to Amplifiers...3. Single-Stage Amplifiers...19

PREVIEW COPY. Amplifiers. Table of Contents. Introduction to Amplifiers...3. Single-Stage Amplifiers...19 Amplifiers Table of Contents Lesson One Lesson Two Lesson Three Introduction to Amplifiers...3 Single-Stage Amplifiers...19 Amplifier Performance and Multistage Amplifiers...35 Lesson Four Op Amps...51

More information

Basic Electronics: Diodes and Transistors. October 14, 2005 ME 435

Basic Electronics: Diodes and Transistors. October 14, 2005 ME 435 Basic Electronics: Diodes and Transistors Eşref Eşkinat E October 14, 2005 ME 435 Electric lectricity ity to Electronic lectronics Electric circuits are connections of conductive wires and other devices

More information

ELT 215 Operational Amplifiers (LECTURE) Chapter 5

ELT 215 Operational Amplifiers (LECTURE) Chapter 5 CHAPTER 5 Nonlinear Signal Processing Circuits INTRODUCTION ELT 215 Operational Amplifiers (LECTURE) In this chapter, we shall present several nonlinear circuits using op-amps, which include those situations

More information

ELECTRONIC DEVICES AND CIRCUITS

ELECTRONIC DEVICES AND CIRCUITS ELECTRONIC DEVICES AND CIRCUITS 1. At room temperature the current in an intrinsic semiconductor is due to A. holes B. electrons C. ions D. holes and electrons 2. Work function is the maximum energy required

More information