QM400HA-H HIGH POWER SWITCHING USE
|
|
- Lawrence Morgan
- 5 years ago
- Views:
Transcription
1 QMH-H QMH-H IC Collector current... CX Collector-emitter voltage... hf current gain... Insulated Type UL Recognized Yellow Card No. 86 (N) File No. 8 PPLICTION C motor controllers, UPS, motor controllers, NC equipment OUTLIN DRWING & CIRCUIT DIGRM Dimensions in mm 6 8 M φ6. B BX 8 6 C 6 M6 B BX C LBL.
2 QMH-H BSOLUT MXIMUM RTINGS (Tj= C, unless otherwise noted) Symbol Parameter Conditions Ratings Unit CX (SUS) Collector-emitter voltage IC=, B= CX Collector-emitter voltage B= CBO Collector-base voltage mitter open BO mitter-base voltage Collector open IC Collector current IC Collector reverse current (forward diode current) PC Collector dissipation TC= C W IB Base current ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 6Hz (half wave) Tj Junction temperature ~+ C Tstg Storage temperature ~+ C iso Isolation voltage Charged part to case, C for minute Main terminal screw M6.6~. ~ Mounting torque Mounting screw M6 B() terminal screw M.6~. ~.8~. ~ BX terminal screw M.8~. ~ Weight Typical value 6 g LCTRICL CHRCTRISTICS (Tj= C, unless otherwise noted) Symbol Parameter Test conditions Min. Limi Typ. Max. Unit ICX ICBO IBO C (sat) B (sat) CO hf ton tf Rth (j-c) Q Rth (j-c) R Collector cutoff current Collector cutoff current mitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage current gain Switching time Thermal resistance (junction to case) C=, B= CB=, mitter open B= IC=, IB=. IC= (diode forward voltage) IC=, C=. CC=, IC=, IB=.8, IB=8 Transistor part Diode part m m m Rth (c-f) Contact thermal resistance (case to fin) Conductive grease applied.
3 QMH-H PRFORMNC CURS COLLCTOR CURRNT IC () 8 COMMON MITTR OUTPUT CHRCTRISTICS (TYPICL) IB= IB= IB=m IB=m Tj= C CURRNT GIN S. COLLCTOR CURRNT (TYPICL) Tj= C Tj= C C=. C=. COLLCTOR-MITTR OLTG C () COLLCTOR CURRNT IC () CURRNT GIN hf BS CURRNT IB () COMMON MITTR INPUT CHRCTRISTIC (TYPICL) C=. Tj= C STURTION OLTG C (sat), B (sat) () STURTION OLTG CHRCTRISTICS (TYPICL) Tj= C Tj= C B(sat) C(sat) IB=. BS-MITTR OLTG B () COLLCTOR CURRNT IC () COLLCTOR-MITTR STURTION OLTG C (sat) () COLLCTOR-MITTR STURTION OLTG (TYPICL) IC= IC= IC= Tj= C Tj= C SWITCHING TIM ton,, tf () SWITCHING TIM S. COLLCTOR CURRNT (TYPICL) ton CC= IB=.8 tf IB=8 Tj= C Tj= C BS CURRNT IB () COLLCTOR CURRNT IC ()
4 QMH-H SWITCHING TIM S. BS CURRNT (TYPICL) RRS BIS SF OPRTING R SWITCHING TIM, tf () CC= IB=.8 IC= Tj= C Tj= C tf COLLCTOR CURRNT IC () 8 Tj= C 8 IB= 8 BS RRS CURRNT IB () COLLCTOR-MITTR OLTG C () FORWRD BIS SF OPRTING R DRTING FCTOR OF F. B. S. O.. COLLCTOR CURRNT IC () µs µs TC= C NON RPTITI ms ms µs 8 6 COLLCTOR DISSIPTION SCOND BRKDOWN R COLLCTOR-MITTR OLTG C () CS TMPRTUR TC ( C) DRTING FCTOR (%) Zth (j c) ( C/ W) TRNSINT THRML IMPDNC CHRCTRISTIC (TRNSISTOR) COLLCTOR RRS CURRNT IC () RRS COLLCTOR CURRNT S. COLLCTOR-MITTR RRS OLTG (DIOD FORWRD CHRCTRISTICS) (TYPICL) Tj= C Tj= C TIM (s) COLLCTOR-MITTR RRS OLTG CO ()
5 QMH-H Zth (j c) ( C/ W) SURG COLLCTOR RRS CURRNT ICSM () RTD SURG COLLCTOR RRS CURRNT (DIOD FORWRD SURG CURRNT) TRNSINT THRML IMPDNC CHRCTRISTIC (DIOD).... CONDUCTION TIM (CYCLS T 6Hz). TIM (s)
QM200HA-2H HIGH POWER SWITCHING USE
QMH-H QMH-H IC Collector current... CEX Collector-emitter voltage... 1 hfe current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E81 PPLICTION C motor controllers, UPS, CCF, motor
More informationQM300HA-2H HIGH POWER SWITCHING USE
QMH-H QMH-H IC Collector current... CEX Collector-emitter voltage... 1 hfe current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E81 PPLICTION Inverters, Servo drives, motor controllers,
More informationQM50HA-H MEDIUM POWER SWITCHING USE
QMH-H QMH-H IC Collector current... CEX Collector-emitter voltage... 6 hfe DC current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E81 PPLICTION Inverters, Servo drives, UPS, DC
More informationQM30HA-H MEDIUM POWER SWITCHING USE
QMH-H QMH-H IC Collector current... CEX Collector-emitter voltage... 6 hfe current gain... Insulated Type UL Recognized Yellow Card No. E6 (N) File No. E1 PPLICTION Inverters, C servo drives, UPS, motor
More informationQM150DY-2HK HIGH POWER SWITCHING USE
QM1DY-HK QM1DY-HK IC Collector current... 1 CEX Collector-emitter voltage... hfe current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E81 PPLICTION Inverters, Servo drives, motor
More informationQM300DY-2H HIGH POWER SWITCHING USE
QMDY-H QMDY-H IC Collector current... CEX Collector-emitter voltage... hfe current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E8 PPLICTION C motor controllers, UPS, CCF, motor
More informationQM100DY-2HBK HIGH POWER SWITCHING USE
BX B1X MITSUBISHI TRNSISTOR MODULES QM1DY-HBK QM1DY-HBK IC Collector current... 1 CEX Collector-emitter voltage... 1 hfe current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E81
More informationQM150HY-H HIGH POWER SWITCHING USE
QM1HY-H QM1HY-H IC Collector current... 1 CEX Collector-emitter voltage... 6 hfe current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E81 PPLICTION Inverters, Servo drives, motor
More informationQM75DY-H HIGH POWER SWITCHING USE
QMDY-H QMDY-H IC Collector current... CEX Collector-emitter voltage... hfe current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E81 PPLICTION Inverters, Servo drives, UPS, motor
More informationQM100HY-H HIGH POWER SWITCHING USE
QMHY-H QMHY-H IC Collector current... CEX Collector-emitter voltage... hfe current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E81 PPLICTION Inverters, Servo drives, motor controllers,
More informationQM15HA-H MEDIUM POWER SWITCHING USE
MITSUISHI TRNSISTOR MODULES QM1H-H INSULTED TYPE QM1H-H IC Collector current... 1 CEX Collector-emitter voltage... 6 hfe current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E81
More informationCM150TL-12NF. APPLICATION AC drive inverters & Servo controls, etc CM150TL-12NF. IC...150A VCES...600V Insulated Type 6-elements in a pack
CMTL-NF CMTL-NF IC... CES...6 Iulated Type 6-elements in a pack PPLICTION C drive inverters & Servo controls, etc OUTLINE DRWING & CIRCUIT DIGRM Dimeio in mm.6. 6 ±. -φ. MOUNTING HOLES N P WP P UP CN L
More informationAPPLICATION DC motor control, NC equipment, Inverters, Servo drives, contactless switches, electric furnace temperature control, light dimmers. 2 φ5.
TMR-M,-H TMR-M,-H PPLICTION DC motor control, NC equipment, Inverters, Servo drives, contactless switches, electric furnace temperature control, light dimmers OUTLINE DRWING & CIRCUIT DIGRM 1 4.6 K1 K
More informationPM200CVA060 PM200CVA060. APPLICATION General purpose inverter, servo drives and other motor controls LABEL PM200CVA060
MITSUBISHI PMC6 PMC6 TYPE PMC6 FETURE φ, 6 Current-sense IGBT for khz switching Monolithic gate drive & protection logic Detection, protection & status indication circuits
More informationnot Recommend for New Design TM130DZ/CZ/PZ-M,-H HIGH POWER GENERAL USE
TMDZ/CZ/PZ-M,-H TMDZ/CZ/PZ-M,-H (DZ Type) PPLICTION DC motor control, NC equipment, C motor control, Contactless switches, Electric furnace temperature control, Light dimmers OUTLINE DRWING & CIRCUIT DIGRM
More informationPM50RLB060. APPLICATION General purpose inverter, servo drives and other motor controls PM50RLB060 MITSUBISHI <INTELLIGENT POWER MODULES>
PMRLB6 PMRLB6 FETURE a) dopting new th generation (CSTBT) chip, which performance is improved by µm fine rule process. r example, typical ce(sat)=. @Tj= C b) I adopt the over-temperature conservation by
More informationPM100RL1B060 FLAT-BASE TYPE INSULATED PACKAGE
FETURE verter + Brake + Drive & Protection IC a) dopting new th generation Full-Gate CSTBT TM chip b) The over-temperature protection which detects the chip surface temperature of CSTBT TM is adopted.
More informationCM400HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HIGBT MODULES CM4HG-66H rd-ersion HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules CM4HG-66H IC...4 CES... High Insulated Type -element in a Pack ISiC Baseplate PPLICTION Traction
More informationMG200Q2YS60A(1200V/200A 2in1)
TOSHIBA IGBT Module Silicon N Channel IGBT (V/A in) High Power Switching Applications Motor Control Applications Integrates a complete half bridge power circuit and fault-signal output circuit in one package.
More informationPM25RL1B120 FLAT-BASE TYPE INSULATED PACKAGE
PMRLB PMRLB FETURE verter + Brake + Drive & Protection IC a) dopting new th generation Full-Gate CSTBT TM chip b) The over-temperature protection which detects the chip surface temperature of CSTBT TM
More informationCM200DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM200DY-24A. IC...200A VCES V Insulated Type 2-elements in a pack
CMDY-A CMDY-A IC...A CES... Insulated Type -elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 9 8 CE E C E G GE 8 () -φ6. MOUNTING
More informationPM50RSE060 PM50RSE060. APPLICATION General purpose inverter, servo drives and other motor controls PM50RSE060 LABEL
MITSUBISHI PMRSE6 PMRSE6 FLT-BSE TYPE TYPE INSULTED PCKGE PMRSE6 FETURE a) dopting new th generation planar IGBT chip, which performance is improved by µm fine rule process.
More informationTOSHIBA IGBT Module Silicon N Channel IGBT MG400Q2YS60A
MGQYSA TOSHIBA IGBT Module Silicon N Channel IGBT MGQYSA High Power Switching Applications Motor Control Applications Integrates a complete half bridge power circuit and fault-signal output circuit in
More informationPM75CSD120 PM75CSD120. APPLICATION General purpose inverter, servo drives and other motor controls LABEL PM75CSD120
MITSUBISHI PMCSD PMCSD TYPE PMCSD FETURE a) dopting new th generation planar IGBT chip, which performance is improved by µm fine rule process. b) Using new Diode which
More informationPM75RSD060 PM75RSD060. APPLICATION General purpose inverter, servo drives and other motor controls LABEL PM75RSD060
MITSUBISHI MRSD6 MRSD6 FLT-BSE TYE TYE MRSD6 FETURE a) dopting new th generation planar IGBT chip, which performance is improved by µm fine rule process. r example, typical
More informationPM25CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM25CLA120 MITSUBISHI <INTELLIGENT POWER MODULES>
FETURE a) dopting new 5th generation (CSTBT) chip, which performance is improved by 1µm fine rule process. r example, typical ce(sat)=1.9 @Tj=125 b) I adopt the over-temperature conservation by Tj detection
More informationPM50CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM50CLA120 FEATURE MITSUBISHI <INTELLIGENT POWER MODULES>
FEATURE a) Adopting new th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. r example, typical ce(sat)=1.9 @Tj=1 C b) I adopt the over-temperature conservation by Tj
More informationBCR5KM. APPLICATION Control of heater such as electric rice cooker, electric pot. BCR5KM OUTLINE DRAWING Dimensions in mm
Refer to the page 6 as to the product guaranteed maximum junction temperature C OUTLINE DRWING Dimensions in mm ±..8 ±. 1 ±. ±. 6. ±. φ. ±. 1 ±..6 ±. 1.1 ±. 1.1 ±. E. ±.. ±.1. ±.. ±.1 IT (RMS)... DRM...
More informationC N V (4TYP) U (5TYP) QIF (Common Collector)
QI_ Powerex, Inc., Pavilion Lane, Youngwood, Pennsylvania 9 () 9- www.pwrx.com Dual H Module mperes/ olts S NUTS (TYP) F D F J (TYP) C N H B E M H (TYP) G (TYP) R (DEEP) T (SCREWING DEPTH) (NC) K (TYP)
More informationCP15TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 15 Amperes/1200 Volts
Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 2.68±.1 68.±.3 B 1.73±.2 44.±.5 C.58±.4 14.7±.1 D 3.1±.2 79.±.5 E 2.83 72. F.16±.1 4.±.3 G 2.83±.1 72.±.3 H.7 2. J.2±.8 5.±.2 K.87 22.
More informationItem Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous. A Collector current
7MBRS6 IGBT Modules IGBT MODULE (S series) 6 / / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and DC servo
More informationItem Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current A. Continuous Tc=25 C 35. Tc=80 C 30.
7MBR2S12 IGBT Modules IGBT MODULE (S series) 12 / 2 / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and
More informationCP10TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 10 Amperes/1200 Volts
CP1TD1-24A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 1697-18 (724) 92-7272 1 Amperes/12 Volts Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 2.68±.1 68.±.3 B 1.73±.2
More informationPM150RLB060. APPLICATION General purpose inverter, servo drives and other motor controls PM150RLB060.
FLT-BSE TYPE INSULTED PCKGE FETURE a) dopting new 5th generation (CSTBT) chip, which performance is improved by µm fine rule process. r example, typical ce(sat)= @Tj=25 b) I adopt the over-temperature
More informationL M DETAIL "A" SIGNAL TERMINAL 3 E(L) 4 V D 5 G(H) 6 F O (H) 7 E(H) 8 OPEN
MG3QYSA Powerex, Inc., E. Hillis Street, Youngwood, Pennsylvania 1597-1 (7) 95-77 Compact IGBT Series Module 3 Amperes/1 Volts J A D K L M N W V E C1 C DETAIL "A" H B F E CE1 U W Outline Drawing and Circuit
More informationL M DETAIL "A" SIGNAL TERMINAL 3 E(L) 4 V D 5 G(H) 6 F O (H) 7 E(H) 8 OPEN
MGQYSA Powerex, Inc., E. Hillis Street, Youngwood, Pennsylvania 1597-1 (7) 95-77 Compact IGBT Series Module Amperes/1 Volts J A D K L M N W V E C1 C DETAIL "A" H B F E CE1 U W Outline Drawing and Circuit
More informationXI'AN IR-PERI Company
FineSiliconPowerNetworks HALF-BRIDGE IGBT Features Applications IGBT NPT Technology AC & DC Motor controls VCES = 1200V Ic = 75A VCE(ON) typ. = 2.8V @ Ic = 75A 10μs Short circuit capability Low turn-off
More informationItem Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous. A Collector current
7MBR3S6 IGBT Modules IGBT MODULE (S series) 6 / 3 / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and DC
More informationItem Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous Tc=25 C 75. A Collector current.
7MBR5SB12 IGBT Modules IGBT MODULE (S series) 12 / 5 / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and
More informationRating 600 ± to to Unit V V A A A W W C C N m. Symbol Characteristics Conditions Unit Min. Typ. Max.
600 / 50 Molded Package Features Small molded package Low power loss Soft switching with low switching surge and noise High reliability, high ruggedness (RBSO, SCSO etc.) Comprehensive line-up pplications
More informationPS12034 PS MITSUBISHI SEMICONDUCTOR <Application Specific Specific Intelligent Power Power Module> FLAT-BASE TYPE TYPE INSULATED TYPE TYPE
MITSUBISHI SEMICONDUCTOR PS4 PS4 FLT-BSE TYPE TYPE INSULTED TYPE TYPE PS4 INTEGRTED FUNCTIONS ND FETURES Converter bridge for phase C-to-DC
More informationPM50CSE120 FLAT-BASE TYPE TYPE INSULATED PACKAGE
MITSUBISHI FLT-BSE TYE TYE FETURE a) dopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which is designed
More informationPM75CL1A120 FLAT-BASE TYPE INSULATED PACKAGE
PMCL1A1 PMCL1A1 FEATURE verter + Drive & Protection IC a) Adopting new th generation Full-Gate CSTBT TM chip b) The over-temperature protection which detects the chip surface temperature of CSTBT TM is
More informationQID Dual IGBT HVIGBT Module 85 Amperes/6500 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBT HVIGBT Module Description: Powerex HVIGBTs feature highly insulating housings that offer enhanced protection
More informationAPPLICATION AC100V~200V three-phase inverter drive for small power motor control. (2.2) 21.4 ±0.5 (10) (11) (10) (4.65) (2.9) 34.9 ± ±0.5 (1.
MITSUBISHI SEMICONDUCTOR TYPE TYPE PS2869 INTEGRTED POWER FUNCTIONS 600/50 low-loss CSTBT inverter bridge for 3 phase DC-to-C power conversion INTEGRTED
More informationBCR16A, BCR16B, BCR16C, BCR16E
MITSUBISHI SEMICONDUCTOR TRIC, B, C : NON-INSULTED TYPE, E : INSULTED TYPE, GLSS PSSITION TYPE OUTLINE DRWING Dimensions in mm φ. MIN φ. MIN 4 MX φ8. MX 6. MX 9 MX φ. MX MX IT (RMS)... 6 DRM...4/ IFGT!,
More informationItem Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current A. Continuous Tc=25 C 35. Tc=75 C 30.
7MBRS14 IGBT Modules IGBT MODULE (S series) 14 / / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications Inverter for Motoe Drive C and
More informationItem Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current. Tc=80 C 35. 1ms IC -IC pulse.
7MBR5U12 IGBT Modules IGBT MODULE (U series) 12 / 5 / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications Inverter for Motoe Drive
More informationV (4TYP) U (5TYP) V 0.28 Dia. 7.0 Dia.
QIC68 Preliminary Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 697 (724) 9-7272 www.pwrx.com Dual Common Emitter HVIGBT Module 8 Amperes/6 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E
More informationDATA SHEET NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING ±8.
DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed
More information2SC3657 2SC3657. Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications. Maximum Ratings (Tc = 25 C)
SC67 TOSHIBA Transistor Silicon NPN Triple Diffused Type SC67 Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications Unit: mm Excellent switching times: tr
More informationDescription of Terminal Symbols and Terminology
Quality is our message Chapter 2 Description of Terminal Symbols and Terminology Contents Page 1. Description of Terminal Symbols...2-2 2. Description of Terminology...2-3 2 1 1 Description of Terminal
More informationItem Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current. Tc=80 C IC. Tc=80 C.
7MBRU12 IGBT Modules IGBT MODULE (U series) 12 / / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications Inverter for Motoe Drive C and
More informationApplied between V UFB -V UFS, V VFB -V VFS,V WFB -V WFS. Applied between U P,V P,W P -V PC, U N,V N,W N -V NC
Maximum Ratings (Tj=25 C, unless otherwise noted) : Inverter Part: Item Symbol Condition Rating Unit Supply voltage CC Applied between P-NU,N,NW 450 Supply voltage (surge) CC(surge) Applied between P-NU,N,NW
More informationItem Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. Not recommend for new design. Continuous Tc=25 C
7MBRSC IGBT Modules PIM/Built-in converter with thyristor and brake (S series) / / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications
More informationHigh Power Rugged Type IGBT Module
ug. 29 High Power Rugged Type IGBT Module Description DWIN S IGBT 7DM3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These
More informationItem Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. 1ms. 1 device. Continuous 1ms. 1 device
7MBR3SC6 IGBT Modules PIM/Built-in converter with thyristor and brake (S series) 6 / 3 / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications
More informationGT50J325 GT50J325. High Power Switching Applications Fast Switching Applications. Maximum Ratings (Ta = 25 C) Thermal Characteristics
GT5J25 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5J25 High Power Switching Applications Fast Switching Applications Unit: mm The th generation Enhancement-mode Fast switching (FS):
More informationGT50J301 GT50J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS. MAXIMUM RATINGS (Ta = 25 C) EQUIVALENT CIRCUIT
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 GT50J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm Third generation IGBT Enhancement mode type High
More informationNGTB25N120SWG. IGBT - Inverter Welding. 25 A, 1200 V V CEsat = 2.0 V E off = 0.60 mj
NTBNSW IBT - Inverter Welding This Insulated ate Bipolar Transistor (IBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications,
More informationPM150RSE120 FLAT-BASE TYPE TYPE INSULATED PACKAGE
MITSUBISHI FLT-BSE TYE TYE FETURE a) dopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which is designed
More informationMITSUBISHI INTELLIGENT POWER MODULES PM800HSA060 FLAT-BASE TYPE INSULATED PACKAGE
PM8HSA6 A K J L M LABEL V (2 REQD) C E R E B W 5 FO 4 VC CI 2 SR 1 V1 U φ (4 HOLES) G S φ (2 PLS) TYP Q 12 4 5 F D T SQ PIN (5 PLS) P H C Description: Mitsubishi Intelligent Power Modules are isolated
More informationNew Designs. Not Recommended for. General purpose transistor (isolated transistor and diode) QSL11 QSL11. Transistors. Rev.A 1/4
General purpose transistor (isolated transistor and diode) A 2SB7 and a RB46F are housed independently in a TSMT5 package. Applications DC / DC converter Motor driver Features ) Tr : Low CE(sat) Di : Low
More informationD AB Z DETAIL "B" DETAIL "A"
QID1215 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (72) 925-7272 www.pwrx.com Split Dual Si/SiC Hybrid IGBT Module 1 Amperes/12 Volts Y A AA F D AB Z AC Q DETAIL "B" Q
More informationIT (AV) A VDRM V JEDEC : TO-92. Conditions A IT (AV) Commercial frequency, sine half wave, 180 conduction, Ta=30 C A ITSM
CRM-8 GLSS PSSITION TYPE CRM-8 OUTLINE DRWING φ. MX. Dimensions in mm T TERMINL T TERMINL GTE TERMINL OLTGE CLSS TYPE NME. MX. MIN CIRCUMSCRIBE CIRCLE φ.....9 MX IT ().... DRM... IGT...µ JEDEC : TO-9 PPLICTION
More informationGT60M323 GT60M323. Voltage Resonance Inverter Switching Application Unit: mm. Maximum Ratings (Ta = 25 C) Thermal Characteristics. Equivalent Circuit
GTM323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GTM323 Voltage Resonance Inverter Switching Application Unit: mm Enhancement-mode High speed : tf =.9 µs (typ.) (IC = A) Low saturation
More informationTYP K "T" (4 TYP) TYP TYP UP UFO V VPI GND GND GND GND IN V CC OUT S I
MITSUBISHI TELLIGENT POWER MODULES PM7RSK6 SULATED PACKAGE B D. UPC. UFO. UP. UPI. PC 6. FO 7. P 8. PI 9. WPC. WFO. WP. WPI. NC. NI. BM 6. UN 7. N 8. WN 9. FO. P. BR... N U. W A E W F G H P J K L 6 7 8
More informationU P V VPI VFO WFO UP UFO V VPC GND GND
N A C D Q Q Q 1 234 5678 9 11 13 15 17 2 14 16 18 V (14 TYP.) R (2 TYP.) 1. VUPC 2. UFO 3. UP 4. VUPI 5. VVPC 6. VFO 7. VP 8. VVPI 9. VWPC 10. WFO 11. WP 12. VWPI 13. 14. 15. 16. 17. 18. 19. 20. 21. 22.
More informationU P V VPI VFO R (2 TYP.) WFO UP UFO V VPC GND GND
N A C D Q Q Q 1 234 5678 9 11 13 15 17 2 14 16 18 V (14 TYP.) R (2 TYP.) 1. VUPC 2. UFO 3. UP 4. VUPI 5. VVPC 6. VFO 7. VP 8. VVPI 9. VWPC 10. WFO 11. WP 12. VWPI 13. 14. 15. 16. 17. 18. 19. 20. 21. 22.
More informationPM50RSE120 FLAT-BASE TYPE TYPE INSULATED PACKAGE
MITSUBISHI FLT-BSE TYE TYE ISULTED CKGE FETURE a) dopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which
More informationIT (AV) A VDRM...400V/600V JEDEC : TO-92. Conditions A IT (AV) Commercial frequency, sine half wave, 180 conduction, Ta=47 C A ITSM
OUTLINE DRWING φ. MX. Dimensions in mm CTHODE NODE GTE OLTGE CLSS TYPE NME. MX. MIN CIRCUMSCRIBE CIRCLE φ.....9 MX IT ().... DRM.../ IGT...µ JEDEC : TO-9 PPLICTION Leakage protector, timer, gas ignitor
More informationUnit IT (RMS) ITSM. Conditions. Commercial frequency, sine full wave 360 conduction, Tc=98 C 60Hz sinewave 1 full cycle, peak value, non-repetitive
OUTLINE DRWING Dimensions in mm MX TYPE NME CLSS.±.. MIN. MX. MX.. φ.6±. 1.. 1.....6. IT (RMS)... DRM.../ IFGT!, IT!, IT #... m (m) 1 1 1T1 TERMINL T TERMINL GTE TERMINL T TERMINL TO- Measurement point
More informationFM600TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE
FM6TU- INSULTED PCKGE FM6TU- ID(rms)... DSS... Insulated Type 6-elements in a pack Thermistor inside UL Recognized File No.E8 PPLICTION C motor control of forklift (battery power source), UPS OUTLINE DRING
More informationConditions. Unit IT (RMS) ITSM. Commercial frequency, sine full wave 360 conduction, Tc=86 C 60Hz sinewave 1 full cycle, peak value, non-repetitive
OUTLINE DRWING MX Dimensions in mm φ.±.1 TYPE NME CLSS 8 MX 1.±.1.8.8.±..7± MX 1 MIN.. MIN. MX 1 Measurement point of case temperature IT (RMS)... DRM.../6 IFGT!, IT!, IT #... m (1m) 6 ±.1 MX 1T1 TERMINL
More informationPS , PS A, PS C Intellimod Module Dual-In-Line Intelligent Power Module 3 Amperes/600 Volts
PS21961-4, PS21961-4A, Dual-In-Line Intelligent Power Module R A D N O P 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 DTAIL "A" X K K V G F H C J L DTAIL "B" AD A PS21961-4 / PS21961-4A AD A R O A N D P X
More informationBC856-HF Thru. BC858-HF Series (PNP) RoHS Device Halogen Free
-HF Thru. -HF Series (PNP) RoHS Device Halogen Free Features - Ideally suited for automatic insertion - Power dissipation PCM:.25W (@T=25 C) - Low current.(max. 1m) - Collector-base voltage CBO: = -8 =
More informationPM300DSA060 Intellimod Module Single Phase IGBT Inverter Output 300 Amperes/600 Volts
Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 PM3DSA6 Single Phase IGBT Inverter Output 3 Amperes/6 Volts G A B G J N T - DIA. (2 TYP.) N SIDE 1. VN1 2. SNR 3. CN1 4.
More informationDATA SHEET PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING 4.0 A
DATA SHEET SILICON POWER TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The is a mold power transistor developed for high-speed switching, and is ideal for use as a driver in devices
More informationMG400V2YS60A MG400V2YS60A. High Power Switching Applications Motor Control Applications. Equivalent Circuit
MGV2YS6A TOSHIBA IGBT Module Silicon N Channel IGBT MGV2YS6A High Power Switching Applications Motor Control Applications Unit in mm The electrodes are isolated from case. Enhancement mode Thermal output
More informationSPECIFICATION. Preliminary MT5F Fuji Electric Systems Co.,Ltd. : Mar This specification's contents may change without previous notice.
SPECIFICATION Device Nme Type Nme DWG. No. Dte : IGBT : FGW5N6HD : : Mr.321 This specifiction's contents my chnge without previous notice. REISIONS DRAWN CHECKED CHECKED D A T E Mr./3/ 1 Mr./3/ 1 N A M
More informationSG200-12CS2 200A1200V IGBT Module
Typical applications: AC and DC electric motor control Frequency transformer UPS Industry power supply Electric welding machine Characteristics: SPT chip (soft-punch-through) MOS input control Ultra thin
More informationPM30CSJ060 Intellimod Module Three Phase IGBT Inverter Output 30 Amperes/600 Volts
Three Phase IGBT Inverter Output N A C D Q Q Q 1 234 5678 9 11 13 15 17 2 14 16 18 V (14 TYP.) R (2 TYP.) 1. VUPC 2. UFO 3. UP 4. VUPI 5. VVPC 6. VFO 7. VP 8. VVPI 9. VWPC 1. WFO 11. WP 12. VWPI 13. 14.
More information2SB1203/2SD1803. Relay drivers, high-speed inverters, converters, and other general high-current switching applications
Ordering number : EN8C SB/SD8 SANYO Semiconductors DATA SHEET SB/SD8 Applications Relay drivers, high-speed inverters, converters, and other general high-current switching applications Features Low collector-to-emitter
More informationConditions Commercial frequency, sine full wave 360 conduction, Tc=56 C 4 60Hz sinewave 1 full cycle, peak value, non-repetitive
OUTLINE DRWING φ. MX. Dimensions in mm T TERMINL T TERMINL GTE TERMINL CLSS TYPE NME. MX. MIN CIRCUMSCRIBE CIRCLE φ... IT (RMS)... DRM... 6 IFGT!, IT!, IT #... m IFGT #...m JEDEC : TO-9..9 MX PPLICTION
More informationTOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324
GTJ2 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GTJ2 High Power Switching Applications Fast Switching Applications Unit: mm Fourth-generation IGBT Enhancement mode type Fast switching
More informationMCH6101 / MCH6201 MCH6101 / MCH6201. Applications. Features. Specifications ( ) : MCH6101. SANYO Electric Co.,Ltd. Semiconductor Company
Ordering number : ENN68A PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption of MBIT processes.
More informationNPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol 546 547 548 Unit Collector Emitter oltage CEO 65 45 dc Collector Base oltage CBO
More informationMPMD100B120RH NPT & Rugged Type 1200V IGBT Module. Features. conditioning. Applications. total losses. Equivalent Circuit 7DM-3. Welding Machine, UPS
General Description MagnaChip s IGBT Module 7DM3 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
More information2SC5353 2SC5353. Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications. Maximum Ratings (Tc = 25 C)
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) SC55 Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications Unit: mm Excellent switching times:
More information6MBP150RA060. IGBT-IPM R series. 600V / 150A 6 in one-package. Features. Maximum ratings and characteristics
6MBP15RA6 IGBTIPM R series 6 / 15A 6 in onepackage Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance
More informationV VPI V (14 TYP.) VFO R (2 TYP.) WFO UP UFO V VPC GND GND GND GND GND GND VCC
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Three Phase IGBT Inverter Output N A C D Q Q Q 1 234 5678 9 11 13 15 17 2 14 16 18 V (14 TYP.) R (2 TYP.) 1. VUPC 2.
More informationP Q SIGNAL TERMINAL 1 F O (L) 5 F O (H) V S DETAIL "A"
MIG4J2CSB1W Powerex, Inc., 2 E. Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 Compact IPM Series Dual Module 4 Amperes/6 Volts J A D K N P Q E W E2 C1 C S F B C2E1 E DETAIL "A" R T U H
More informationUNISONIC TECHNOLOGIES CO., LTD 2SC5305
UNISONIC TECHNOLOGIES CO., LTD 2SC535 HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High Hfe For Low Base Drive Requirement * Suitable For Half Bridge Light Ballast Applications * Built-In
More informationTc=100 C 300 Tc=25 C 360 Collector current
2MBI3VH-12-5 IGBT MODULE (V series) 12V / 3A / 2 in one package Inverter Inverter Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and
More information2SD1508 2SD1508. Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications. Maximum Ratings (Ta = 25 C)
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm High
More informationCM600YE2N-12F / CM600YE2P-12F TLI-Series (Three Level Inverter) IGBT 600 Amperes/600 Volts
CM6YN-12F / CM6YP-12F TLI-Series (Three Level Inverter) IGBT P V Q W Q V R P S J Y, Z U (2 PLACES) L ( PLACES) M N K (3 PLACES) Y, Z G F E B CM6YN-12F D A X T C Outline Drawing and Circuit Diagram RTC
More information2SD2638 2SD2638. Horizontal Deflection Output for Color TV, Digital TV High Speed Switching Applications. Maximum Ratings (Tc = 25 C)
SD TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type SD Horizontal Deflection Output for Color TV, Digital TV High Speed Switching Applications Unit: mm High voltage: VCBO = 7 V Low saturation voltage:
More informationObsolete Product(s) - Obsolete Product(s)
BU808DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE HIGH VOLTAGE CAPABILITY ( > 1400
More informationMPMB75B120RH NPT & Rugged Type 1200V IGBT Module. Features. Applications. devices are. total losses. Equivalent Circuit 7DM-1 E301932
General Description MagnaChip s IGBT Module 7DM- package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
More informationSTR-S6707 THRU STR-S6709
STR-S6707 THRU STR-S6709 WITH BIPOLR SWITCHING TRNSISTOR Data Sheet 28113* COLLECTOR COMMON BSE SINK DRIVE OVER-CURRENT PROTECTION FDBK INHIBIT V IN 1 2 3 4 5 6 7 8 9 DRIVE OSC. FULT S FULT LTCH R REF.
More information