NGTB25N120SWG. IGBT - Inverter Welding. 25 A, 1200 V V CEsat = 2.0 V E off = 0.60 mj

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1 NTBNSW IBT - Inverter Welding This Insulated ate Bipolar Transistor (IBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IBT is well suited for welding applications. Incorporated into the device is a soft and fast copackaged free wheeling diode with a low forward voltage. Features T Jmax = 7 C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching s Short Circuit Capability These are PbFree Devices, Csat =. off =. mj C Typical pplications Welding BSOLUT MXIMUM RTINS Rating Symbol alue Unit Collectoremitter voltage CS Collector TC = TC = C I C Pulsed collector current, T pulse I CM limited by T Jmax Diode forward TC = TC = C I F C TO7 CS L Diode pulsed current, T pulse limited I FM by T Jmax MRKIN DIRM ateemitter voltage Transient gateemitter voltage (T pulse = s, D <.) ± Power TC = TC = C Short Circuit Withstand Time =, C =, T J C Operating junction temperature range P D 9 W T SC s T J to +7 C Storage temperature range T stg to +7 C Lead temperature for soldering, / from case for seconds T SLD C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Y WW NS YWW = ssembly Location = Year = Work Week = PbFree Package ORDRIN INFORMTION Device Package Shipping NTBNSW TO7 (PbFree) Units / Rail Semiconductor Components Industries, LLC, November, Rev. Publication Order Number: NTBNSW/D

2 NTBNSW THRML CHRCTRISTICS Rating Symbol alue Unit Thermal resistance junctiontocase, for IBT R JC.9 C/W Thermal resistance junctiontocase, for Diode R JC.9 C/W Thermal resistance junctiontoambient R J C/W LCTRICL CHRCTRISTICS (T J = C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit STTIC CHRCTRISTIC Collectoremitter breakdown voltage, gateemitter shortcircuited =, I C = (BR)CS Collectoremitter saturation voltage =, I C = =, I C =, T J = 7 C ateemitter threshold voltage = C, I C = (th)... Collectoremitter cutoff current, gate emitter shortcircuited ate leakage current, collectoremitter shortcircuited =, C = =, C =, T J = 7 C Csat I CS... =, C = I S n. m Input capacitance C ies pf Output capacitance C =, =, f = MHz C oes Reverse transfer capacitance C res ate charge total Q g 7 nc ate to emitter charge C =, I C =, = Q ge 9 ate to collector charge Q gc SWITCHIN CHRCTRISTIC, INDUCTI LOD Turnon delay time t d(on) 7 ns Rise time t r 7 Turnoff delay time T J = C t d(off) 79 Fall time CC =, I C = R g = t f Turnon switching loss = / on.9 mj Turnoff switching loss off. Total switching loss ts. Turnon delay time t d(on) ns Rise time t r 9 Turnoff delay time T J = C t d(off) Fall time CC =, I C = R g = t f Turnon switching loss = / on.9 mj Turnoff switching loss off. Total switching loss ts. DIOD CHRCTRISTIC Forward voltage =, I F = =, I F =, T J = 7 C Reverse recovery time T J = C t rr ns Reverse recovery charge I F =, R = di F /dt = / s Q rr. c Reverse recovery current I rrm Product parametric performance is indicated in the lectrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the lectrical Characteristics if operated under different conditions. F...

3 NTBNSW TYPICL CHRCTRISTICS 9 7 = to 7 9 T J = C T J = C = to C, COLLCTORMITTR OLT () Figure. Output Characteristics C, COLLCTORMITTR OLT () Figure. Output Characteristics, C, CPCITNC (pf) C ies C oes C res T J = C I F, FORWRD CURRNT () T J = C T J = C C, COLLCTORMITTR OLT () F, FORWRD OLT () Figure. Typical Capacitance Figure. Diode Forward Characteristics, TMITTR OLT () C = = I C = SWITCHIN LOSS (mj) C = = T J = C Rg = on off Q, T CHR (nc) Figure. Typical ate Charge Figure. Switching Loss vs. I C

4 NTBNSW TYPICL CHRCTRISTICS SWITCHIN TIM (ns) t f t d(off) t d(on) t r C = = T J = C Rg =. dc operation Single Nonrepetitive Pulse T C = C Curves must be derated linearly with increase in temperature s s ms k Figure 7. Switching Time vs. I C C, COLLCTORMITTR OLT () Figure. Safe Operating rea SQURW PK R(t) ( C/W)... % Duty Cycle % % % % Single Pulse.... Junction R R C C. Duty Factor = t /t Peak T J = P DM x Z JC + T C. R n C n Case. R i ( C/W) R JC =.9 C i (J/ C) ONPULS WIDTH (s) Figure 9. IBT Die Selfheating Squarewave Duty Cycle Transient Thermal Response SQURW PK R(t) ( C/W). % Duty Cycle % % % % Junction R R R n C C Duty Factor = t /t. Single Pulse Peak T J = P DM x Z JC + T C..... C n. R JC =.9 Case R i ( C/W) C i (J/ C) ONPULS WIDTH (s) Figure. Diode Die Selfheating Squarewave Duty Cycle Transient Thermal Response

5 NTBNSW PCK DIMNSIONS TO7 CS L ISSU / NOT D L X b NOT e Q NOT L NOT c b X b. M B M B NOT 7 STIN PLN S P. M B M NOT NOTS:. DIMNSIONIN ND TOLRNCIN PR SM Y.M, 99.. CONTROLLIN DIMNSION: MILLIMTRS.. SLOT RQUIRD, NOTCH MY B ROUNDD.. DIMNSIONS D ND DO NOT INCLUD MOLD FLSH. MOLD FLSH SHLL NOT XCD. PR SID. THS DIMNSIONS R MSURD T TH OUTRMOST XTRM OF TH PLSTIC BODY.. LD FINISH IS UNCONTROLLD IN TH RION DFIND BY L.. P SHLL H MXIMUM DRFT NL OF. TO TH TOP OF TH PRT WITH MXIMUM DIMTR OF DIMNSION TO B MSURD IN TH RION DFIND BY L. MILLIMTRS DIM MIN MX.7... b.. b.. b.. c.. D e. BSC L 9.. L.. P.. Q.. S. BSC ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. listing of SCILLC s product/patent coverage may be accessed at SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an qual Opportunity/ffirmative ction mployer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICTION ORDRIN INFORMTION LITRTUR FULFILLMNT: Literature Distribution Center for ON Semiconductor P.O. Box, Denver, Colorado 7 US Phone: 77 or Toll Free US/Canada Fax: 77 or 7 Toll Free US/Canada mail: orderlit@onsemi.com N. merican Technical Support: 9 Toll Free US/Canada urope, Middle ast and frica Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: 7 ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NTBNSW/D